Method for titan-germanium contact layer creation

FIELD: electronics.

SUBSTANCE: invention is attributed to microelectronics and can be used in production of semiconductor devices and integral circuits. Essence of invention: in the method of attaching silicon chip to chip holder, chip seating surface is successively sputtered with two titan-germanium metals, and chip to chip holder soldering is carried out at temperature of 280-300°C.

EFFECT: improvement of chip with chip-holder contact reliability and stability of attachment process.

 

The invention relates to microelectronics and can be used in the manufacture of semiconductor devices and integrated circuits.

A known method of connecting a semiconductor crystal with crystallochemical [1]. The invention consists in that on the joined surface of the crystal and Kristallografiya put layers of metal: crystal, magnesium, on crystallochemical - aluminum, between them place the sealing gasket of the aluminum-magnesium alloy electric composition, heat up the parts to 450-750°in which is formed a liquid layer, stand and cool before forming the solder connection.

The disadvantage of this method is a complex technology, high temperature, low productivity of the process.

A known method of connecting a semiconductor crystal with crystallochemical [2]. The method consists in spraying on the reverse side of the plate layer of the metals titanium-germanium (Ti-Ge), between the surfaces of the crystal and Kristallografiya place sealing gasket tin-lead, heat up the details before forming the solder connection.

The disadvantage of this method is the unreliability of the contact connection.

The technical result of the invention is to improve the reliability of contact of the crystal with crystallochemical and stability of the process is and join.

The essence of the method lies in the fact that on the reverse side of the silicon wafer is applied sequentially in a single technological cycle two metal: titanium-germanium. Share the plate on the crystals and make the solder crystals to crystallochemical at a temperature of 280-300°C for 2-4 C. This combination of sprayed layers provide reliable contact of the crystal with crystallochemical, 100% distribution of solder on the surface of the crystal, the absence of pores in the solder, the improvement of the output characteristics of the device.

The quality of fit is controlled by the method of separation with a certain force and visually under a microscope. While testing landing crystal with double layer plated crystal is not detached from Kristallografiya when the application of the appropriate efforts, and with more force breaks the silicon. This explains the fact that the landing of crystal quality. By visual inspection under a microscope on all sides of the crystal along the perimeter emerges solder 0.5-1.0 mm from the edge, which shows a satisfactory distribution of solder over the entire area of the crystal. Moreover, the control area distribution of solder on the base of the crystal using x-ray microscope showed 100% distribution of the solder layer on the chip area without pores, which improves heat is waista device.

Summary of the invention the following examples:

EXAMPLE 1. The process is carried out in a vacuum sputtering (magnetron) in which there is a silicon wafer. Ask the modes of spraying of metals: titanium-germanium. The process is carried out in a single technological cycle, on the surface of the semiconductor is formed of a thin metal film. The percentage of yield on "operation stop of crystal" is 95-96%.

EXAMPLE 2. The method is carried out analogously to example 1. Ask the modes of spraying of metals: titanium-germanium. The percentage of yield on "operation stop of crystal" is 99-100%.

The use of this method can improve the reliability of contact of the crystal with crystallochemical during the process of deposition of the two metals: titanium-germanium in a single technological cycle.

The method of attaching a silicon die to crystallochemical semiconductor device, comprising the sequential deposition on the landing surface of the crystal layers of metal and the solder bead to crystallochemical, characterized in that conduct sequential deposition of the two metals titanium-germanium, and the solder bead to crystallochemical carried out at 280-300°C.



 

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