Efficient led array. RU patent 2521219.
 Lighting device / 2519242Invention relates to lighting engineering. The lighting device includes illumination devices (40) which at voltage supply emit primary radiation and solid particles (64, 66) which surround the illumination devices (40) at least by sections and interact with the primary radiation. Concentration of particles (64, 66) changes at least in one direction from the illumination devices (40) from the first concentration section up to the second one. |
 Led-based light source for light fixtures of sanitary grade / 2518181Invention relates to lighting engineering. The light source consists of a printed circuit board dissipating heat, a LED array pack, a beam splitter and reflector. The LED array pack is fixed to the printed circuit board and covered by the beam splitter which, in its turn, is pressed to the reflector and positioned with it. The central light beams from the LED array pack are collimated by the beam splitter for the purpose of projection outside. Side light beams are refracted in the direction by the beam splitter, intercepted by the reflector and redirected to the target area of lighting together with the central beams. |
 Optical device and method of manufacture thereof / 2518118Invention relates to optical devices and methods for manufacture thereof. Disclosed is an optical device having a light-emitting or a light-sensitive element mounted on a substrate and cured organosilicon material, integrated into a single article by sealing the element with an organosilicon compound which is cured via hydrosilylation, wherein the surface of the cured organosilicon material is treated with polyorganosiloxane which contains at least three hydrogen atoms bonded with silicon atoms in one molecule. A method of making said optical device is also disclosed. |
 Infrared radiation source / 2516197Infrared radiation source (1) comprises a primary energy converter (2) with current-conducting contacts (3) and an active region (4) with optical thickness in the radiation output direction, which does not exceed double the value of the inverse of the mean absorption coefficient of the active region in the energy range of radiation quanta of the source (1). The active region (4) is made of at least one non-conducting liquid or gas, having absorption bands of radiation of the source. The primary energy converter (2) is made of piezoelectric material. The active region (4) and the primary energy converter (2) are placed in a sealed housing (5), at least part of which is transparent for radiation of the source (1). |
 Semiconductor light-emitting devices grown on composite wafers / 2515205Method for manufacture of a semiconductor light-emitting device includes growing a variety of III-nitride semiconductor structures on the wafer, at that each semiconductor structure includes a light-emitting layer placed between n-type area and p-type area; the wafer includes a base, a variety of areas of III-nitride material divided by depressions, at that depressions cover the whole thickness of III-nitride material which forms the above structures; a binding layer placed between the base and the variety of areas of III-nitride material; herewith the light-emitting layer of each semiconductor structure has spacing parameter more than 3.19 Angstrom units; and forming of conductive material which connects electrically two of III-nitride semiconductor structures. The semiconductor light-emitting device is also suggested. |
 Led-base light emitting device / 2515185Proposed device features a simplified adjustment of white light temperature. Note here that proposed device comprises multiple various-type light emitting units. Said units comprise LED elements emitting UV radiation or visible violet light. It comprises phosphors to absorb UV radiation or said visible violet light and to emit colour light. Note here that colour light from set units is mixed to become white light. LED element of said multiple units are identical and mounted on one bed. Note that two or more light emitting units partially overlap. |
 Method of arranging and connecting light-emitting elements in bunches, arranged in monolithic light-emitting arrays / 2514055Method according to the invention involves arranging light-emitting elements in a closed field in repeating groups with virtual numbers of bunches within a group, first in forward order and then in reverse order. Series connection of light-emitting elements with like light-emitting elements within a group is carried out, for example, from the right-hand side, and between neighbouring groups on the left-hand side, with alternately adjacent conductors directed in parallel to the axis of the position of the light-emitting element in the closed field if the conductor is placed in the plane of the closed field. In case of multi-level connection of the light-emitting element under the plane of the light-emitting element of the conductor in insulating layers, the light-emitting element is connected by a connecting metal coating through the insulating layers with the corresponding conductor on the insulating layers situated on two virtual non-crossing lines on which, for example, on the left-hand side, connection with the light-emitting element is carried out within the group of light-emitting elements, and on the right-hand side between neighbouring groups in areas without conductors in previous insulating layers. The invention enables to find ways to arrange and connect bunches of light-emitting elements in an integrated circuit array thereof in order to increase density of arrangement, maintain emission of the light-emitting device when one or more bunches of the light-emitting array break down in manufacturing processes, inspection, classification, operation, and high yield of non-defective items. |
 Light-emitting diode device / 2513645Invention pertains to optical instrument-making. The LED device according to the invention includes one or more emitter chips arranged arbitrarily on a single flat substrate and coated with a common layer of a compound gel, optionally with phosphor crystals, and a plate made of optical material placed on the flat surface of the gel without an air space. On the inner side of the plate bordering with the gel, there are mutually perpendicular grooves whose faces are inclined to the surface of the gel at an angle α=55°…65°, and the depth of the grooves is not more than h=0.8 mm. The vertices of the grooves form squares, the length of the sides of which is D=(1.75…2.3)Dc, where Dc is the size of the side of the chip, wherein D=D0, where D0 is the distance between optical axes of the emitter chips, wherein optical axes of the squares of the incision and corresponding chips coincide. |
 Light-emitting diode device / 2513640Invention relates to optical instrument-making and specifically to a class of powerful LEDs used as alternatives to halogen lamps, as well as for overhead, industrial, facade and other illuminators. The LED device consists of one or more emitter chips arbitrarily arranged on a single flat substrate and coated with a common layer of a compound gel, optionally with phosphor crystals, wherein over each chip, the surface bordering with the air is spherical or aspherical with a radius at the peak of not more than 4 mm. The diameter of this surface D=(1.75…2.3)Dc, where Dc is the size of the emitting surface of the chip, wherein optical axes of said surfaces coincide, and the distance from the surface of the chip to the peak of the surface bordering with the air is not more than d=1.5 mm. The surface bordering with the air can have, over each chip around the entire periphery of the surface of the device, a limiting dimension D, wherein the height h and the width t of said device is not more than (0.1…0.15)D. The surface bordering with the air can be made on a plane-convex lens made of any optical material, including from organic glass, which is placed on the compound gel over the chip without an air space. |
 Light-emitting diode with moulded bi-directional optics / 2512110Invention can be used for light applications other than backlights, where the vertical beam pattern (collimation pattern) and the side-light emission pattern can be substantially independently specified. A double-moulded lens for a LED includes an outer lens moulded around the periphery of a LED chip and a collimating inner lens moulded over the top surface of the LED chip and partially defined by a central opening in the outer lens. The outer lens is formed using silicone having a relatively low refraction index such as n=1.33-1.47, and the inner lens is formed from silicon with a higher refraction index, such as n=1.54-1.76, to cause total internal reflection within the inner lens. |
 Heavy-power light-emitting diode / 2247444Proposed light-emitting diode based on nitride compounds of group III metals, that is aluminum, gallium, and indium (AIIIN), includes p-n junction epitaxial structure disposed on insulating substrate and incorporating n and p layers based on solid solutions of group III nitrides AlxInyGa1 - (x + y)N, (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), as well as metal contact pads for n and p layers disposed on side of epitaxial layers, respectively, at level of lower epitaxial n layer and at level of upper epitaxial p layer. Projections of light-emitting diode on horizontal sectional plane, areas occupied by metal contact pad for n layer, and areas occupied by metal contact pad for p layer are disposed on sectional plane of light-emitting diode in alternating regions. Metal contact pad for n layer has portions in the form of separate fragments disposed in depressions etched in epitaxial structure down to n layer; areas occupied by mentioned fragments in projection of light-emitting diode onto horizontal sectional plane are surrounded on all sides with area occupied by metal contact pad for p layer; fragments of metal contact pad for n layer are connected by means of metal buses running over metal contact pad insulating material layer applied to portions of this contact pad over which metal buses are running. |
 Light source with light-emitting component / 2251761Proposed light source emitting light in ultraviolet or blue light region (from 370 to 490 nm) and capable of producing high-efficiency white light affording control of luminance temperature within comprehensive range has light-emitting component that emits light in first spectral region and phosphor of group of optosilicate alkali-earth metals and that absorbs part of source light and emits light in other spectral region. Novelty is that phosphor used for the purpose is, essentially, europium activated bivalent optosilicate of alkali-earth metal of following composition: (2-x-y)SrO · x(Bau, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+ and/or (2-x-y)BaO · x(Sru, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+. |
 Photoluminescent semiconductor materials / 2255326Porous-structured semiconductor materials are modified by recognition element and exposing to electromagnetic radiation carries out photoluminescence reaction. Recognition elements that can be chosen from bio-molecular, organic and non-organic components interact with target to be subject to analysis. As a result, the modulated photoluminescence reaction arises. |
 Light-emitting diode device / 2258979Proposed device that can be used, for instance, in railway light signals built around light-emitting diodes has one or more photodetectors and set of optical filters additionally disposed on substrate. Each photodetector has its p region connected to its respective wire lead through contact pad; wire lead is passed through substrate hole and insulated from the latter; its n region is connected to its respective wire lead by means of conductor provided with metal or metal-plated contact made in the form of ring segment, all segments being integrated into ring by means of insulating inserts. Set of optical filters having similar or different spectral filtering characteristics is formed by parts of hollow inverted truncated cone whose quantity equals that of photodetectors; all parts are integrated through insulating gaskets into single hollow inverted truncated cone. Disposed on butt-ends of hollow inverted truncated cone are dielectric rings of which upper one has inner diameter equal to that of large base of truncated cone and outer diameter, to that of substrate. Dielectric ring has holes over its circumference for electrical connection of photodetector conductors and light-emitting chips to contacts in the form of ring segments. |
 Semiconductor source of infrared radiation / 2261501Device has emitting surface, recombination area, not less than one passive layer, transparent for emission with hv energy, at least one of layers is made with n-type of conductivity and at least one of said layers is positioned between recombination area and emitting surface, not less than one heat-draining surface and node for connection to outer energy source. Concentration of free carriers (n) and width of forbidden zone (E1) in aforementioned passive layer match relations: where hv and Δhv0.5 - quant energy and half-width of spectrum of emission, formed in recombination zone, respectively, eV, and ndeg - concentration of carriers, at which degeneration of conductivity zone starts, cm-3. |
 Photo-luminescent emitter, semiconductor element and optron based on said devices / 2261502Emitter has electro-luminescent diode of gallium arsenide, generating primary emission in wave length range 0,8-0,9 mcm, and also poly-crystal layer of lead selenide, absorbing primary emission and secondarily emitting in wave length range 2-5 mcm, and lead selenide includes additionally: admixture, directionally changing emission maximum wave length position as well as time of increase and decrease of emission pulse, and admixture, increasing power of emission. Photo-element includes lead selenide layer on dielectric substrate with potential barrier formed therein, and includes admixtures, analogical to those added to lead selenide of emitter. Optron uses emitter and photo-elements. Concentration of addition of cadmium selenide in poly-crystal layer of emitter is 3,5-4,5 times greater, than in photo-element. Open optical channel of Optron is best made with possible filling by gas or liquid, and for optimal synchronization and compactness emitter and/or photo-element can be improved by narrowband optical interference filters. |
 Semiconductor element emitting light in ultraviolet range / 2262155Proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 280 -200 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material, active layer with one or more quantum wells made of nitride material, barrier layer made of Mg doped AlXGaI-XN, and p contact layer made of Mg doped nitride material; used as nitride material for n contact layer is AlyGaI-yN in which 0.25 ≤ V ≤ 0.65; used as nitride material of active layer is AlZGaI ZN, where V - 0.08 ≤ Z ≤ V - 0.15; in barrier layer 0.3 ≤ X ≤ 1; used as nitride material in p contact layer is AlwGa1 - wN, where V ≤ W ≤ 0.7; active layer is doped with Si whose concentration is minimum 1019 cm-3; width "d" of active layer quantum wells is 1 ≤ d ≤ 4 nm; molar fraction of Al on barrier layer surface next to active layer is 0.6 to 1 and further reduces through barrier layer width to its boundary with p contact layer with gradient of 0.02 to 0.06 by 1 nm of barrier layer thickness, barrier layer width "b" ranging within 10≤ b ≤ 30 nm. |
 Semiconductor element emitting light in ultraviolet range / 2262156Proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 240 -300 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material AlXIInX2GaI-XI-X2N, active layer made of nitride material AlVIInY2GaI-YI-Y2N, and p contact layer made of Mg doped nitride material AlZIInZ2GaI-ZI-Z2N; active layer is divided into two areas; area abutting against contact layer is doped with Si and has n polarity of conductivity; other area of active layer is doped with Mg and has p polarity of conductivity; molar fraction of Al (YI) in p area of active layer is continuously and monotonously reducing between its boundary with n contact layer and boundary with p area of contact layer and is within the range of 0.1 ≤ VI ≤ 1; difference in VI values at boundaries of active-layer n area is minimum 0.04 and width of forbidden gap in active-layer p area at its boundary with active-layer n area exceeds by minimum 0.1 eV the maximal width of n area forbidden gap. |
 Light-emitting diode incorporating optical component / 2265916Proposed light-emitting diode has chip covered with optical component made of translucent material whose outer surface is of aspherical shape obtained due to rotation of f(x) curve constructed considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode; it is light-emitting surface. Curve f(x) in coordinate system whose origin point coincides with geometric center of light-emitting chip active area has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode; used as this size is desired height of optical component or its desired diameter; active area is formed by plurality of points Ai (i = 1, 2..., n). Taken as coordinates of each point are coordinates of intersection point of straight line coming from coordinate origin point at angle αini to ordinate axis and straight line coming from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light emitting chip and chosen between angles 0 and 90 deg.; angle Gi is found from given dependence. |
 Light-emitting diode incorporating optical component / 2265917Proposed light-emitting diode has light-emitting chip covered by optical component made of translucent material whose outer surface is aspherical in shape due to rotation of curve f(x) built considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode. This surface emits light and f(x) curve in coordinate system whose origin coincides with geometric center of active area of light-emitting diode has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode which is, essentially, optical component height or its desired diameter, and is formed by plurality of points A, (i = 1, 2... n); coordinates of intersection point of straight line drawn from coordinate origin point at angle αini to ordinate axis drawn from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1 are taken as coordinates of each of them;; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light-emitting chip chosen between 0 and 90 deg. Angle Gi is found from given dependence. Angle αouti is found by pre-construction of directivity pattern DPin of beam emitted by light-emitting chip. Coordinates of A points are checked by means of light-emitting diode simulator that has optical component whose outline is formed by plurality of Ai points as well as light-emitting chip whose beam directivity pattern is DPin; this chip is used as distributed light source having three-dimensional emitting area whose size and appearance correspond to those of emitting area used in light-emitting diode of light-emitting chip. Light emitting points in light-emitting chip of simulator under discussion are offset relative to origin of coordinates within its emitting area; coordinates of Ai points are checked by comparing directivity pattern DPout and directivity pattern DPsim of beam emitted by light-emitting diode simulator, both displayed in same coordinate system. When these directivity patterns coincide, coordinates of points Ai function as coordinates of points forming curve f(x); if otherwise, coordinates of points Ai are found again, and DPoutj is given as directivity pattern DPout whose points are disposed above or below the latter, respectively, depending on disposition of directivity pattern DPsim below or above directivity pattern DPout in the course of check. |
FIELD: physics, optics.
SUBSTANCE: invention can be used to emit light using light-emitting diodes (LED). The LED apparatus includes a metal substrate having a reflective surface, and a plurality of LED chips mounted directly to the reflective surface of the metal substrate to allow for heat dissipation, wherein at least some of the LED chips are spaced apart from each other to allow reflection of light from a portion of the reflective surface which is located between portions of the LED chips, as well as an electrical circuit formed by connecting LED chips to each other.
EFFECT: high light efficiency, improved heat removal from the array of LED chips and easier manufacture of the array of LED chips.
32 cl, 5 dwg
THE TECHNICAL FIELD TO WHICH THE INVENTION RELATES
The invention relates mainly to the light-emitting diodes, and more specifically to efficient led matrix.
PRIOR ART
Light-emitting diode (LED) is a semiconductor material, rich or doped with impurities. These impurities add in the semiconductor electrons or holes that can travel in substance relatively freely. Depending on the type of alloy impurities region of a semiconductor can have, mainly, electrons or holes and is referred to as the semiconductor area of n-type or p-type, respectively. In led applications of semiconductor includes semiconductor region n-type semiconductor field of p-type. At the junction between the two areas creates a reverse electric field, which causes the electrons and holes removed from transition, for the formation of the active region. If the p-n-transition serves forward voltage sufficient to overcome the reverse of the electric field, the electrons and holes are forced to move into the active area and unite. When the electrons combine with holes, they switch to a lower energy levels and release energy in the form of light.
While working to p-n-transition serves forward voltage by means of two electrodes. Electrodes form in semiconductor substance through p-electrode generated in the semiconductor field of p-type and n-electrode generated in the semiconductor of n-type. Each electrode includes a conductive contact platform that allows an external voltage to the led.
As a rule, the device that has led many crystals (LED), create by installing close-led crystals on a ceramic substrate. Unfortunately, closely spaced led crystals can have a reciprocal influence on each other and lead to reduced light output. In addition, the ceramic substrate used because led the crystals have a thermal circuit and electric circuits that are in contact with each other. For example, led crystals can have electrical contacts both at the top and on the bottom surface, so when the crystal is mounted on a substrate, substrate can skip both heat and electricity. Thus, ceramic substrate provides electrical insulating properties, thus allowing the passage of heat. Unfortunately, ceramic substrate does not provide sufficiently effective thermal circuit, so the heat closely spaced led crystals, can worsen the light output. To facilitate the dissipation, ceramic substrate can be mounted on aluminum heat allocator, which, in turn, is mounted on an additional heat sink. The device is expensive and, as a result, complicated by the manufacturer.
SUMMARY OF THE INVENTION
In the art, there is a need to improve led crystals in order to increase the light output, to provide effective heat dissipation and to simplify manufacturing.
In one aspect provide led device that contains a metal plate with a reflective surface, and many led crystals, mounted directly on the reflecting surface of the metal substrate in order to allow for the dissipation of heat, and characterized by the fact that at least part led crystals are placed at a certain distance from each other, in order to allow for the reflection of light from some of the reflective surface, which is located between the parts led crystals.
In another aspect provide a way of formation led devices. The method includes the configuration of the metal substrate to be reflective surface and mount led many crystals directly on the reflecting surface of the metal substrate in order to allow for the dissipation of heat, and characterized by the fact that at least part led crystals are placed at a certain distance from each other, in order to allow for the reflection of light from some of the reflective surface, which is located between the parts led crystals.
One more aspect provide an led lamp that contains case and led the device attached to the chassis. Led device has a metal plate with a reflective surface, and many led crystals, mounted directly on the reflecting surface of the metal substrate in order to allow for the dissipation of heat, and thus, at least part led crystals are placed at a certain distance from each other, in order to allow for the reflection of light from some of the reflective surface, which is located between the parts led crystals.
In yet another aspect provide lighting device that contains a power source and is electrically connected to the power supply led. Led lamp includes case and led the device attached to the chassis. Led device has a metal plate with a reflective surface, and many led crystals, mounted directly on the reflecting surface of the metal substrate in order to allow for the dissipation of heat, and thus, at least part led crystals are placed at a certain distance from each other, in order to allow for the reflection of light from some of the reflective surface, which is located between the parts led crystals.
Other aspects of the present invention will become apparent qualified specialist in the art from the following detailed description. As will be clear, the present invention also includes other aspects and some other features, which allow for modifications in various other ways, but not exceeding creatures and scope of the present invention. Accordingly, drawings and detailed description of the nature should be regarded as illustrative and not as restrictive.
BRIEF DESCRIPTION OF DRAWINGS
The above aspects, described in this document, will become more apparent with reference to the following description with links to the attached drawings, in which:
figure 1 depicts the top view and side view led crystal for use in the aspects of efficient led matrix;
figure 2 depicts the led matrix is constructed in accordance with aspects of the present invention;
figure 3 depicts effective device led matrix constructed in accordance with aspects of the present invention;
figure 4 shows the block diagram of the stages of way to create a device efficient led matrix in accordance with the aspects of this the invention; and
figure 5 depicts a sample of the device, including efficient led matrix constructed in accordance with aspects of the present invention.
THE IMPLEMENTATION OF THE INVENTION
In the future, the present invention is described more fully by reference to the attached drawings, which show different aspects of the present invention. The invention may, however, be translated in many different types and cannot be interpreted as limiting the different aspects of this invention presented throughout disclosure. Rather, these aspects provide in order to make this disclosure more detailed and complete, and fully convey the scope of the invention specialist in the art. Different aspects of this invention is illustrated by drawings, can be made not to scale. Accordingly, the dimensions of the various parts can be increased or decreased for clarity. In addition, some of the drawings can be simplified for clarity. Thus, the drawings can be not specified, all components of this device or method.
Various aspects of the present invention will be described later in this document with reference to the drawings, which are schematic illustrations theoretical configuration of the present invention. In this regard, it can be assumed change certain patterns of illustrations, for example as a result of the manufacture and/or because of tolerances. Thus, the different aspects of this invention presented throughout disclosure, cannot be interpreted as restricting certain required elements (for example, regions, sectors, segments, substrates, etc), are illustrated and described in this document and presented to incorporate deviations from certain required forms received, for example as a result of manufacture. As an example element, illustrated or described as a rectangular, may have round or curved parts and/or the concentration gradient at the edges higher than discrete change from one element to another. Thus, the elements illustrated in the drawings, are sketchy in nature, and such examples are not intended to illustrate the exact particular, the required form of the element and are not intended to limit the scope of the present invention.
It should be understood that when an item, such as area, layer, segment, substrate or similar more part of the name is referred to as being "on" another element, it can be located directly on another item or may be present and intermediate elements. On the contrary, when an item is referred to as being "on one element, then no intermediate element is not present. Additionally it should be understood that when an item is referred to as the element that generated by one element, it can be grown, strike, obliterate, dock, connect, connect, or otherwise prepare or make on another item or intermediate element.
Additionally, the relative concepts, such as "low" or "bottom" and "over the top" or "top", can be used in this document to describe the mutual position of one element relative to another, illustrated by drawings. It should be understood that the relative concepts are intended to enable the different orientation of devices, in addition to the orientation specified on the drawings. As an example, if the device on the drawings overturn, the elements described as being at "low" side of the other items will then be focused on the "over the top" of the other elements. The concept of "lower" may, therefore, to include both "lower"and "upper" orientation, depending on the specific orientation of the device. Similarly, if the device on the drawing, turning, then the elements described as "below" or "under" other items, will be focused on other elements. The concept of "below" or "under" can, therefore, conclude as orientation above and orientation below.
If not specified differently, then all the concepts (including technical and scientific terms and definitions used in this document have the same meaning, which is usually understands qualified specialist in the technical field to which the invention. Additionally it should be understood that such notions indicated in the commonly used dictionaries, should be interpreted as having a value that is consistent with this value in the context relating to the existing level of technology and to the disclosure of the invention.
Used in this document form the singular are intended also to include plurals up until in the context clearly indicates otherwise. Additionally it should be understood that the expression "contains" and/or "containing"used in this description, refer to the presence of the stated characteristics of integers, stages, operations, features and/or components, but are hampered by the presence or addition of one or more of the signs of integers, stages, operations, members and/or groups. The expression "and/or" includes any and all combinations of one or more of the following related expressions.
You must understand that, even though the expression "first" and "second" can be used in this document to describe all sorts of areas, layers and/or segments areas such layers and/or segments should not be limited to these expressions. These expressions are used only in order to distinguish one area, layer, the segment from another area, layer, the segment. Thus, the further discussion of the first area, layer, the segment can be described as the second area, layer, segment, and likewise the second area, layer, the segment can be described as the first area, layer, segment, without straying from the purpose of the present invention.
Figure 1 shows a top view of 102 and side view 110 example of led crystal 100 for use in the aspects of efficient led matrix. Referring to top view 102, led crystal includes part 104 of the hull and the active region, which is located inside the area 106. For example, the area 106 includes the region of a semiconductor of n-type, which is, mainly, electrons, and the region of the semiconductor of p-type, which is, mainly, the holes. While working at the transition between the n-type and scope of p-type creates a reverse electric field, which causes the electrons and holes move from the transition to the formation of the active region. When direct voltage sufficient to overcome the reverse of the electric field, submit to the p-n transition, the electrons and holes are forced to move in the active area and unite. When electrons are connected with holes, they switch to a lower energy levels and release energy in the form of light.
Led crystal 100 also includes electrical contacts 108, which are used for the supply voltage. For example, to supply electric voltage conductors, which is supplied electrical signal, connect with contacts 108. When serves voltage to contacts 108 through the United wires, the active area is functioning for the light emission of the selected color.
Consequently, led crystal 100 provides for a separate electrical circuit and thermal circuit, to be able to mount the led crystal 100 onto a metal plate without insulating dielectric, thus providing an efficient heat chain, to reduce or minimize the destructive influence of thermal effect on the light output.
Figure 2 depicts the estimated led matrix 200, designed in accordance with aspects of the present invention. Led matrix 200 contains a metal substrate 204, which has a reflective surface 206. For example, a metal substrate can be created from aluminum, and a reflective surface 206 can be unsecured or brushed aluminium. Alternative reflecting surface 206 can be formed by drawing on a substrate 204 silver coating. Thus, the reflective surface 206 can be formed from any meeting the requirements of the material and may be formed on the substrate 204 any relevant way. In different aspects of the reflecting surface has a refractive index of 70% or more.
Matrix led crystal is mounted directly on the reflecting surface 206 metal substrate 204. For example, the matrix led crystals may include led crystal 100, shown in figure 1. Since the led crystal has 100 mounting surface 112, which is separated from the electric circuit 114, led crystal 100 can be mounted directly on the reflecting surface 206. In so doing, form effective thermal circuit, allowing to remove heat from the matrix led crystals to a metal substrate 204. It should also be noted that, while figure 2 shows nine led crystals, there are no restrictions on the number of led crystals that can be used, and in reality, as only increases the number of led crystals and increased optical amplification.
In various aspects of the led matrix 200 mounted on a substrate 204 with a pre-installed step. For example, mount led crystals having a vertical step marked as 208, and horizontal step marked as 210. In various aspects horizontal step and vertical step is 0.5 mm or more. This step opens the field 212 reflective surface 206 between led crystals. By opening these areas 212 light emitted by the led crystals may impact the open parts of the reflective surface 206, increasing the amount of light output of an led matrix. It should be noted that led matrix can have the same step, unequal step or a combination of this and not limited to a single fixed pitch.
Figure 3 depicts a sample device 300 efficient led matrix constructed in accordance with aspects of the present invention. The device contains 300 led matrix 200 led crystals (for example, led 100), mounted directly on the reflecting surface 206 pre certain step to open the area of the reflecting surface, in order to allow for the reflection of light reflecting surface marked 308, which is located between led crystals.
To ensure the electrical connections on aluminum metal substrate led matrix 200 mount layer dielectric insulator 302, which can be made of aluminum oxide. On top of dielectric 302 to the pad 306 pave the copper tracks 304. Then connecting conductors do the wiring from the pad 306 directly from bead to bead, so voltage can be submitted to all the chips in the led matrix 200. In the form of an electric circuit, designated as 312.
Led matrix 200 mounted directly on the heat sink 310. Heat sink 310 contains any meeting the requirements of the material, and led matrix is mounted directly on the heat sink 310 without any dielectric isolation. It provides effective heat transfer from the metal substrate led matrix 200 heat sink 310. Thus, the metal backing not only works to cool led crystals, but also allows to make heat sink lower, as the substrate is mounted directly on the heat sink. For example, for ceramic substrates necessary aluminum heat diffuser, which is great, and increase costs. Since the led crystals mounted directly on the aluminum substrate, and the aluminium substrate is mounted directly on the heat sink, it forms an effective thermal circuit, designated as 314. Thermal circuit allows to dissipate allocated led crystals heat through the aluminum substrate and heat sink 310, reducing thereby worsening the impact of heat on the light output.
In block 402 form a metal substrate with reflecting surface. For example, the substrate may be aluminum, and the reflecting surface is polished aluminum or silver coating.
In block 404 asked step led crystals in the led matrix. For example, determine that the horizontal and vertical step should be the same, different, or a combination of this. In some phase of the selected horizontal and vertical step is approximately equal to or greater than 0.5 mm.
In block 406 led matrix is mounted on the reflecting surface of the metal substrate with a pre-installed step. Because the led matrix has a separate electric circuit and thermal circuit, led crystals mounted onto a metal plate without using dielectric insulator. Step led crystal opens the area of the reflecting surface between crystals, and these areas are to reflect light, thereby increasing the light output led matrix.
In block 408 set of electrical connection to form an electrical circuit that is separate from thermal circuit. For example, to provide for the supply of electric power to the crystals, connect the conductors all the chips led matrix as described above. Generated electric circuit sever with thermal circuit.
In block 410 led matrix is mounted directly on the heat sink. Because the substrate led matrix is a metal, it can be mounted directly on to the heat sink, without using dielectric insulator.
Therefore, the method 400 works to create efficient led matrix in accordance with the aspects of the present invention. It should be noted that the stages of way 400 can be rearranged or otherwise modified within the scope of the various aspects. Thus, other possible implementation in accordance with the volume of various aspects, described in this document.
Figure 5 depicts a sample of 500 devices containing efficient led matrix constructed in accordance with aspects of the present invention. Appliances include 500 lamp 502, lighting device 504 and street lamp 506. Each device is shown on figure 5, contains efficient led matrix described in this document. For example, the lamp 502 contains case 516 and efficient led matrix 508, which contains a matrix LEDs with a preset step, mounted onto a metal plate with a reflecting surface. Preset step is working to increase the light output. The lamp 502 can be used for all types of General lighting. For example, the lamp 502 can be used in a car lamp, street lamp, ceiling lamp or any other practical applications for General lighting. The lighting device 504 contains the power supply 510, which is electrically connected to the lamp 512, which can be configured as a lamp 502. In some phase of the power supply can be battery or any other suitable power source, such as solar cell. Street lamp 506 includes a power source, connected with lamp 514, which can have the same configuration as the light 502. In some phase of the lamp 514 includes case and efficient led matrix, which includes the matrix LEDs with a pre-installed step, mounted onto a metal plate with a reflecting surface. Preset step is to increase the light output.
It should be noted that aspects of efficient led matrix described in this document is usable for almost any type of led Assembly, which, in turn, can be used for different types of lighting devices, and is not limited to devices depicted in figure 5. Thus, efficient led matrix described in this document provides efficient light output and efficient heat dissipation and may be used in the device for a number of applications of the device.
Different aspects of this disclosure provides the opportunity qualified specialist in the art to implement the present invention. Various modifications of the aspects that are available throughout the disclosure will be understood by a person skilled in the art, and the concept disclosed in this document, can be extended to other practical applications. Thus, the formula of the invention is not intended to limit various aspects of this disclosure, but must be agreed with full volume constituting the text of the claims. All structural and functional equivalents of various aspects of the items mentioned throughout this disclosure, which are known or which become known specialist in a given field of technology include in this document by reference and imply that they will be covered by the claims.
In addition, none of disclosed in this document is not intended to make the invention in the public domain, without paying attention to whether such disclosure is clearly stated in the claims. None of the elements of the claim shall be construed as not meeting the provisions of the sixth paragraph 35 U.S.C. §112 as long as this item is not clearly set out with the use of the phrase "tool", or in respect of the claim on the way, until this element is not presented with the use of the phrase "step".
Therefore, although in this document are illustrated and described aspects of efficient led matrix, it is necessary to understand, that can be performed various aspects without derogating from the entity or main characteristics. Therefore, disclosure and descriptions in this document are for illustration, and not to limit the scope of the invention, which is set forth in the following claims.
1. Led device containing: a metal plate with reflective surfaces; and many led crystal installed directly on the reflective surface of the metal substrate to allow for the dissipation of heat, and thus, at least part led crystals placed at a distance from each other to ensure the possibility of reflection of light from a part of the reflective surface, which is located between the parts led crystals, and the circuit formed by joining led crystal bead to bead.
2. The device of claim 1 in which the reflecting surface contains polished aluminium.
3. The device of claim 1 in which the reflecting surface contains silver coating.
4. The device of claim 1 in which the reflecting surface is reflective power is 70% or more.
5. The device of claim 1, wherein at least a portion led crystal forms a matrix with a step of the crystal, which is about 0.5 mm or more.
6. The device of claim 1 in which many led crystal provides separate thermal and electric circuit.
7. The device of claim 1 in which many led crystals is the first surface which is installed on the reflecting surface, and electrical contacts that are placed on one or more surfaces that are not the first surface.
8. The device of claim 1, wherein the metal substrate installed directly on the heat sink.
9. Method of formation led the device that contains the time that: configure the metal substrate to be reflective surface; and establish multiple led crystals directly to reflect the surface of the metal substrate to allow for the dissipation of heat, and thus, at least part led crystals place on distance from each other to ensure the possibility of reflection of light from a part of the reflective surface, which is located between the parts led crystals, and form the circuit by connecting led crystal bead to bead.
10. The method of claim 9, in which at the configuration stage configure the reflecting surface so that it contains polished aluminium.
11. The method of claim 9, in which at the configuration stage configure the reflecting surface so that it contains silver coating.
12. The method of claim 9, in which at the configuration stage configure the reflecting surface that it had reflecting capacity, equal to 70 percent or more.
13. The method of claim 9, in which advanced form a matrix of crystals is about 0.5 mm or more, at least in part led crystals.
14. The method of claim 9, additionally contains a stage where configure multiple led crystals to form separate thermal and electric circuit.
15. The method of claim 9, additionally contains a stage where configure multiple led crystals to be the first surface which is installed on the reflecting surface, and electrical contacts that are placed on one or more surfaces that are not the first surface.
16. The method of claim 9, additionally contains a stage at which set a metal plate directly on the heat sink.
17. Led lamp containing: housing; and led the device attached to the chassis and contains: a metal plate with reflective surfaces; and many led crystals that are installed directly on the reflective surface of the metal substrate in order to allow for the dissipation of heat, and thus, at least part led crystal is located at a distance from each other, to be able reflection of light from some of the reflective surface, which is located between the parts of the led crystals, and the electrical circuit, which is formed by joining led crystal bead to bead.
18. The lamp 17, in which the reflecting surface contains polished aluminium.
21. The lamp 17, in which at least part led crystals made with the possibility of forming a matrix of crystals, which is about 0.5 mm or more.
22. The lamp 17, in which many led crystal provides separate thermal and electric circuit.
23. The lamp 17, which led many of the crystals is the first surface which is installed on the reflecting surface, and electrical contacts that are placed on one or more surfaces that are not the first surface.
24. The lamp on 17 where metal backing installed directly on the heat sink.
25. The lighting device containing: power supply; electrically connected to the power supply led lamp containing: housing; and led the device attached to the chassis and contains: a metal plate with reflective surfaces; and many led crystals that are installed directly on the reflective surface of the metal substrate in order to allow for the dissipation of heat, and thus, at least part led crystal is located on distance from each other to ensure that the reflection of light from some of the reflective surface, which is located between the parts of the led crystals, and the circuit formed by joining led crystal bead to bead.
26. The lighting device A.25 in which the reflecting surface contains polished aluminium.
27. The lighting device A.25 in which the reflecting surface contains silver coating.
28. The lighting device A.25 in which the reflecting surface is reflective power equal to 70% and more.
29. The lighting device A.25, in which at least part led crystals made with the possibility of forming a matrix of crystals, which is about 0.5 mm or more.
30. The lighting device A.25, which led many crystals provides separate thermal and electric circuit.
31. The lighting device A.25, which led many of the crystals is the first surface which is installed on the reflecting surface, and electrical contacts, which are provided by one or more surfaces that are not the first surface.
32. The lighting device A.25 where metal backing installed directly on the heat sink.