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Light-emitting diode device. RU patent 2258979.

Light-emitting diode device. RU patent 2258979.

FIELD: structural components of semiconductor devices with at least one potential or surface barrier.

SUBSTANCE: proposed device that can be used, for instance, in railway light signals built around light-emitting diodes has one or more photodetectors and set of optical filters additionally disposed on substrate. Each photodetector has its p region connected to its respective wire lead through contact pad; wire lead is passed through substrate hole and insulated from the latter; its n region is connected to its respective wire lead by means of conductor provided with metal or metal-plated contact made in the form of ring segment, all segments being integrated into ring by means of insulating inserts. Set of optical filters having similar or different spectral filtering characteristics is formed by parts of hollow inverted truncated cone whose quantity equals that of photodetectors; all parts are integrated through insulating gaskets into single hollow inverted truncated cone. Disposed on butt-ends of hollow inverted truncated cone are dielectric rings of which upper one has inner diameter equal to that of large base of truncated cone and outer diameter, to that of substrate. Dielectric ring has holes over its circumference for electrical connection of photodetector conductors and light-emitting chips to contacts in the form of ring segments.

EFFECT: ability of checking up device emission parameters within optical range and of varying indicatrix of emission.

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IPC classes for russian patent Light-emitting diode device. RU patent 2258979. (RU 2258979):

H01L33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L0051500000 takes precedence;devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission H01L0027150000; semiconductor lasers H01S0005000000)
H01L31/12 - structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto (electroluminescent light sources per seH05B0033000000)
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