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Semiconductor source of infrared radiation. RU patent 2261501.

FIELD: semiconductors.

SUBSTANCE: device has emitting surface, recombination area, not less than one passive layer, transparent for emission with hv energy, at least one of layers is made with n-type of conductivity and at least one of said layers is positioned between recombination area and emitting surface, not less than one heat-draining surface and node for connection to outer energy source. Concentration of free carriers (n) and width of forbidden zone (E₁) in aforementioned passive layer match relations: where hv and Δhv_0.5 - quant energy and half-width of spectrum of emission, formed in recombination zone, respectively, eV, and n_deg - concentration of carriers, at which degeneration of conductivity zone starts, cm^-3.

EFFECT: increased radiation strength, increased spectral range of source.

12 cl, 12 ex, 6 dwg

IPC classes for russian patent Semiconductor source of infrared radiation. RU patent 2261501. (RU 2261501):

H01L33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (H01L0051500000 takes precedence;devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission H01L0027150000; semiconductor lasers H01S0005000000)

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