IPC classes for russian patent Light-emitting diode incorporating optical component (RU 2265916):
Another patents in same IPC classes:
Semiconductor element emitting light in ultraviolet range / 2262156
Proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 240 -300 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material AlXIInX2GaI-XI-X2N, active layer made of nitride material AlVIInY2GaI-YI-Y2N, and p contact layer made of Mg doped nitride material AlZIInZ2GaI-ZI-Z2N; active layer is divided into two areas; area abutting against contact layer is doped with Si and has n polarity of conductivity; other area of active layer is doped with Mg and has p polarity of conductivity; molar fraction of Al (YI) in p area of active layer is continuously and monotonously reducing between its boundary with n contact layer and boundary with p area of contact layer and is within the range of 0.1 ≤ VI ≤ 1; difference in VI values at boundaries of active-layer n area is minimum 0.04 and width of forbidden gap in active-layer p area at its boundary with active-layer n area exceeds by minimum 0.1 eV the maximal width of n area forbidden gap.
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Semiconductor element emitting light in ultraviolet range / 2262155
Proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 280 -200 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material, active layer with one or more quantum wells made of nitride material, barrier layer made of Mg doped AlXGaI-XN, and p contact layer made of Mg doped nitride material; used as nitride material for n contact layer is AlyGaI-yN in which 0.25 ≤ V ≤ 0.65; used as nitride material of active layer is AlZGaI ZN, where V - 0.08 ≤ Z ≤ V - 0.15; in barrier layer 0.3 ≤ X ≤ 1; used as nitride material in p contact layer is AlwGa1 - wN, where V ≤ W ≤ 0.7; active layer is doped with Si whose concentration is minimum 1019 cm-3; width "d" of active layer quantum wells is 1 ≤ d ≤ 4 nm; molar fraction of Al on barrier layer surface next to active layer is 0.6 to 1 and further reduces through barrier layer width to its boundary with p contact layer with gradient of 0.02 to 0.06 by 1 nm of barrier layer thickness, barrier layer width "b" ranging within 10≤ b ≤ 30 nm.
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Photo-luminescent emitter, semiconductor element and optron based on said devices / 2261502
Emitter has electro-luminescent diode of gallium arsenide, generating primary emission in wave length range 0,8-0,9 mcm, and also poly-crystal layer of lead selenide, absorbing primary emission and secondarily emitting in wave length range 2-5 mcm, and lead selenide includes additionally: admixture, directionally changing emission maximum wave length position as well as time of increase and decrease of emission pulse, and admixture, increasing power of emission. Photo-element includes lead selenide layer on dielectric substrate with potential barrier formed therein, and includes admixtures, analogical to those added to lead selenide of emitter. Optron uses emitter and photo-elements. Concentration of addition of cadmium selenide in poly-crystal layer of emitter is 3,5-4,5 times greater, than in photo-element. Open optical channel of Optron is best made with possible filling by gas or liquid, and for optimal synchronization and compactness emitter and/or photo-element can be improved by narrowband optical interference filters.
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Semiconductor source of infrared radiation / 2261501
Device has emitting surface, recombination area, not less than one passive layer, transparent for emission with hv energy, at least one of layers is made with n-type of conductivity and at least one of said layers is positioned between recombination area and emitting surface, not less than one heat-draining surface and node for connection to outer energy source. Concentration of free carriers (n) and width of forbidden zone (E1) in aforementioned passive layer match relations: where hv and Δhv0.5 - quant energy and half-width of spectrum of emission, formed in recombination zone, respectively, eV, and ndeg - concentration of carriers, at which degeneration of conductivity zone starts, cm-3.
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Light-emitting diode device / 2258979
Proposed device that can be used, for instance, in railway light signals built around light-emitting diodes has one or more photodetectors and set of optical filters additionally disposed on substrate. Each photodetector has its p region connected to its respective wire lead through contact pad; wire lead is passed through substrate hole and insulated from the latter; its n region is connected to its respective wire lead by means of conductor provided with metal or metal-plated contact made in the form of ring segment, all segments being integrated into ring by means of insulating inserts. Set of optical filters having similar or different spectral filtering characteristics is formed by parts of hollow inverted truncated cone whose quantity equals that of photodetectors; all parts are integrated through insulating gaskets into single hollow inverted truncated cone. Disposed on butt-ends of hollow inverted truncated cone are dielectric rings of which upper one has inner diameter equal to that of large base of truncated cone and outer diameter, to that of substrate. Dielectric ring has holes over its circumference for electrical connection of photodetector conductors and light-emitting chips to contacts in the form of ring segments.
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Photoluminescent semiconductor materials / 2255326
Porous-structured semiconductor materials are modified by recognition element and exposing to electromagnetic radiation carries out photoluminescence reaction. Recognition elements that can be chosen from bio-molecular, organic and non-organic components interact with target to be subject to analysis. As a result, the modulated photoluminescence reaction arises.
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Light source with light-emitting component / 2251761
Proposed light source emitting light in ultraviolet or blue light region (from 370 to 490 nm) and capable of producing high-efficiency white light affording control of luminance temperature within comprehensive range has light-emitting component that emits light in first spectral region and phosphor of group of optosilicate alkali-earth metals and that absorbs part of source light and emits light in other spectral region. Novelty is that phosphor used for the purpose is, essentially, europium activated bivalent optosilicate of alkali-earth metal of following composition: (2-x-y)SrO · x(Bau, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+ and/or (2-x-y)BaO · x(Sru, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+.
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Heavy-power light-emitting diode / 2247444
Proposed light-emitting diode based on nitride compounds of group III metals, that is aluminum, gallium, and indium (AIIIN), includes p-n junction epitaxial structure disposed on insulating substrate and incorporating n and p layers based on solid solutions of group III nitrides AlxInyGa1 - (x + y)N, (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), as well as metal contact pads for n and p layers disposed on side of epitaxial layers, respectively, at level of lower epitaxial n layer and at level of upper epitaxial p layer. Projections of light-emitting diode on horizontal sectional plane, areas occupied by metal contact pad for n layer, and areas occupied by metal contact pad for p layer are disposed on sectional plane of light-emitting diode in alternating regions. Metal contact pad for n layer has portions in the form of separate fragments disposed in depressions etched in epitaxial structure down to n layer; areas occupied by mentioned fragments in projection of light-emitting diode onto horizontal sectional plane are surrounded on all sides with area occupied by metal contact pad for p layer; fragments of metal contact pad for n layer are connected by means of metal buses running over metal contact pad insulating material layer applied to portions of this contact pad over which metal buses are running.
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Heavy-power light-emitting diode / 2247444
Proposed light-emitting diode based on nitride compounds of group III metals, that is aluminum, gallium, and indium (AIIIN), includes p-n junction epitaxial structure disposed on insulating substrate and incorporating n and p layers based on solid solutions of group III nitrides AlxInyGa1 - (x + y)N, (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), as well as metal contact pads for n and p layers disposed on side of epitaxial layers, respectively, at level of lower epitaxial n layer and at level of upper epitaxial p layer. Projections of light-emitting diode on horizontal sectional plane, areas occupied by metal contact pad for n layer, and areas occupied by metal contact pad for p layer are disposed on sectional plane of light-emitting diode in alternating regions. Metal contact pad for n layer has portions in the form of separate fragments disposed in depressions etched in epitaxial structure down to n layer; areas occupied by mentioned fragments in projection of light-emitting diode onto horizontal sectional plane are surrounded on all sides with area occupied by metal contact pad for p layer; fragments of metal contact pad for n layer are connected by means of metal buses running over metal contact pad insulating material layer applied to portions of this contact pad over which metal buses are running.
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Light source with light-emitting component / 2251761
Proposed light source emitting light in ultraviolet or blue light region (from 370 to 490 nm) and capable of producing high-efficiency white light affording control of luminance temperature within comprehensive range has light-emitting component that emits light in first spectral region and phosphor of group of optosilicate alkali-earth metals and that absorbs part of source light and emits light in other spectral region. Novelty is that phosphor used for the purpose is, essentially, europium activated bivalent optosilicate of alkali-earth metal of following composition: (2-x-y)SrO · x(Bau, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+ and/or (2-x-y)BaO · x(Sru, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+.
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Photoluminescent semiconductor materials / 2255326
Porous-structured semiconductor materials are modified by recognition element and exposing to electromagnetic radiation carries out photoluminescence reaction. Recognition elements that can be chosen from bio-molecular, organic and non-organic components interact with target to be subject to analysis. As a result, the modulated photoluminescence reaction arises.
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Light-emitting diode device / 2258979
Proposed device that can be used, for instance, in railway light signals built around light-emitting diodes has one or more photodetectors and set of optical filters additionally disposed on substrate. Each photodetector has its p region connected to its respective wire lead through contact pad; wire lead is passed through substrate hole and insulated from the latter; its n region is connected to its respective wire lead by means of conductor provided with metal or metal-plated contact made in the form of ring segment, all segments being integrated into ring by means of insulating inserts. Set of optical filters having similar or different spectral filtering characteristics is formed by parts of hollow inverted truncated cone whose quantity equals that of photodetectors; all parts are integrated through insulating gaskets into single hollow inverted truncated cone. Disposed on butt-ends of hollow inverted truncated cone are dielectric rings of which upper one has inner diameter equal to that of large base of truncated cone and outer diameter, to that of substrate. Dielectric ring has holes over its circumference for electrical connection of photodetector conductors and light-emitting chips to contacts in the form of ring segments.
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Semiconductor source of infrared radiation / 2261501
Device has emitting surface, recombination area, not less than one passive layer, transparent for emission with hv energy, at least one of layers is made with n-type of conductivity and at least one of said layers is positioned between recombination area and emitting surface, not less than one heat-draining surface and node for connection to outer energy source. Concentration of free carriers (n) and width of forbidden zone (E1) in aforementioned passive layer match relations: where hv and Δhv0.5 - quant energy and half-width of spectrum of emission, formed in recombination zone, respectively, eV, and ndeg - concentration of carriers, at which degeneration of conductivity zone starts, cm-3.
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Photo-luminescent emitter, semiconductor element and optron based on said devices / 2261502
Emitter has electro-luminescent diode of gallium arsenide, generating primary emission in wave length range 0,8-0,9 mcm, and also poly-crystal layer of lead selenide, absorbing primary emission and secondarily emitting in wave length range 2-5 mcm, and lead selenide includes additionally: admixture, directionally changing emission maximum wave length position as well as time of increase and decrease of emission pulse, and admixture, increasing power of emission. Photo-element includes lead selenide layer on dielectric substrate with potential barrier formed therein, and includes admixtures, analogical to those added to lead selenide of emitter. Optron uses emitter and photo-elements. Concentration of addition of cadmium selenide in poly-crystal layer of emitter is 3,5-4,5 times greater, than in photo-element. Open optical channel of Optron is best made with possible filling by gas or liquid, and for optimal synchronization and compactness emitter and/or photo-element can be improved by narrowband optical interference filters.
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Semiconductor element emitting light in ultraviolet range / 2262155
Proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 280 -200 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material, active layer with one or more quantum wells made of nitride material, barrier layer made of Mg doped AlXGaI-XN, and p contact layer made of Mg doped nitride material; used as nitride material for n contact layer is AlyGaI-yN in which 0.25 ≤ V ≤ 0.65; used as nitride material of active layer is AlZGaI ZN, where V - 0.08 ≤ Z ≤ V - 0.15; in barrier layer 0.3 ≤ X ≤ 1; used as nitride material in p contact layer is AlwGa1 - wN, where V ≤ W ≤ 0.7; active layer is doped with Si whose concentration is minimum 1019 cm-3; width "d" of active layer quantum wells is 1 ≤ d ≤ 4 nm; molar fraction of Al on barrier layer surface next to active layer is 0.6 to 1 and further reduces through barrier layer width to its boundary with p contact layer with gradient of 0.02 to 0.06 by 1 nm of barrier layer thickness, barrier layer width "b" ranging within 10≤ b ≤ 30 nm.
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Semiconductor element emitting light in ultraviolet range / 2262156
Proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 240 -300 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material AlXIInX2GaI-XI-X2N, active layer made of nitride material AlVIInY2GaI-YI-Y2N, and p contact layer made of Mg doped nitride material AlZIInZ2GaI-ZI-Z2N; active layer is divided into two areas; area abutting against contact layer is doped with Si and has n polarity of conductivity; other area of active layer is doped with Mg and has p polarity of conductivity; molar fraction of Al (YI) in p area of active layer is continuously and monotonously reducing between its boundary with n contact layer and boundary with p area of contact layer and is within the range of 0.1 ≤ VI ≤ 1; difference in VI values at boundaries of active-layer n area is minimum 0.04 and width of forbidden gap in active-layer p area at its boundary with active-layer n area exceeds by minimum 0.1 eV the maximal width of n area forbidden gap.
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Light-emitting diode incorporating optical component / 2265916
Proposed light-emitting diode has chip covered with optical component made of translucent material whose outer surface is of aspherical shape obtained due to rotation of f(x) curve constructed considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode; it is light-emitting surface. Curve f(x) in coordinate system whose origin point coincides with geometric center of light-emitting chip active area has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode; used as this size is desired height of optical component or its desired diameter; active area is formed by plurality of points Ai (i = 1, 2..., n). Taken as coordinates of each point are coordinates of intersection point of straight line coming from coordinate origin point at angle αini to ordinate axis and straight line coming from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light emitting chip and chosen between angles 0 and 90 deg.; angle Gi is found from given dependence.
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Light-emitting diode incorporating optical component / 2265917
Proposed light-emitting diode has light-emitting chip covered by optical component made of translucent material whose outer surface is aspherical in shape due to rotation of curve f(x) built considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode. This surface emits light and f(x) curve in coordinate system whose origin coincides with geometric center of active area of light-emitting diode has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode which is, essentially, optical component height or its desired diameter, and is formed by plurality of points A, (i = 1, 2... n); coordinates of intersection point of straight line drawn from coordinate origin point at angle αini to ordinate axis drawn from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1 are taken as coordinates of each of them;; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light-emitting chip chosen between 0 and 90 deg. Angle Gi is found from given dependence. Angle αouti is found by pre-construction of directivity pattern DPin of beam emitted by light-emitting chip. Coordinates of A points are checked by means of light-emitting diode simulator that has optical component whose outline is formed by plurality of Ai points as well as light-emitting chip whose beam directivity pattern is DPin; this chip is used as distributed light source having three-dimensional emitting area whose size and appearance correspond to those of emitting area used in light-emitting diode of light-emitting chip. Light emitting points in light-emitting chip of simulator under discussion are offset relative to origin of coordinates within its emitting area; coordinates of Ai points are checked by comparing directivity pattern DPout and directivity pattern DPsim of beam emitted by light-emitting diode simulator, both displayed in same coordinate system. When these directivity patterns coincide, coordinates of points Ai function as coordinates of points forming curve f(x); if otherwise, coordinates of points Ai are found again, and DPoutj is given as directivity pattern DPout whose points are disposed above or below the latter, respectively, depending on disposition of directivity pattern DPsim below or above directivity pattern DPout in the course of check.
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FIELD: semiconductor optoelectronics; various emitters built around light-emitting diodes.
SUBSTANCE: proposed light-emitting diode has chip covered with optical component made of translucent material whose outer surface is of aspherical shape obtained due to rotation of f(x) curve constructed considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode; it is light-emitting surface. Curve f(x) in coordinate system whose origin point coincides with geometric center of light-emitting chip active area has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode; used as this size is desired height of optical component or its desired diameter; active area is formed by plurality of points Ai (i = 1, 2..., n). Taken as coordinates of each point are coordinates of intersection point of straight line coming from coordinate origin point at angle αini to ordinate axis and straight line coming from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light emitting chip and chosen between angles 0 and 90 deg.; angle Gi is found from given dependence.
EFFECT: ability of shaping desired light-beam emission directivity pattern.
1 cl, 3 dwg
The invention relates to a semiconductor optoelectronics and can be used in the manufacture of various types of emitters based on light-emitting diodes (LEDs).
A known design of LEDs, which use optical elements, the shape, size and material are chosen so as to ensure the formation of a defined optical characteristics of the device.
For example, the famous led [EN 2207663], which includes a semiconductor light-emitting crystals, coated optical element containing a cone-shaped reflector side radiation and collecting radiation from the lens, which is a hemisphere with a cylindrical base.
The shape and geometrical dimensions of the reflector and lens are selected so that the optical element provides the efficiency of lateral radiation of the crystals, thereby increasing the radiation power led.
Known led with an optical element [EN 2055420], which is selected by the inventors as the nearest equivalent.
This contains led light-emitting crystal, covered with made of translucent material of the optical element, a portion of the outer surface which is a plane and is light guiding surface, and others who Gaya part is not displaying the radiation surface has an aspherical shape, formed by rotation around the axis of symmetry of the curve f(x), the equation which satisfies the conditions of total internal reflection of light emitted by the crystal, at any point of this surface. In this case the curve f(x) is obtained taking into account the optical properties of the crystal and the optical element, namely taking into account the values of their refractive indices.
In this device, the optical element collects and displays through the light guiding surface, almost all the radiation emitted by the crystal, which causes the increase of output power of radiation of the led.
However, using this device cannot obtain the desired distribution of the light flux in a predetermined spatial angle.
The task of the claimed invention is to provide an led capable of forming a desired pattern of radiation of the light flux.
The invention consists in that the led containing a light-emitting crystal, covered with made of translucent material of the optical element which has an aspherical shape of the outer surface obtained by rotating around the symmetry axis of the led curve f(x)built taking into account the optical properties of light-emitting crystal and the material of the optical element according to the invention the specified behavior is knosti is a light guiding, in this case the curve f(x) in the coordinate system, the point of which coincides with the geometric center of the active light-emitting region of the crystal that has a starting point And0located on the ordinate axis at a distance corresponding to the characteristic size of the led, which used the set value of the height of the optical element or set the value of its diameter, and is formed by a set of points Ai (i=1, 2,..., n), the coordinates of each of which are taken coordinates of the point of intersection of the line emanating from the origin at an angle αWHto the axis of the ordinate, direct, outbound from the previous point Andi-1angle Gito x-axis, shown at point Ai-1when this angle αWHis the angle that extends iIa beam of light that belongs to the set of rays emitted by the light emitting crystal, which is selected from a range of angles from 0 to 90 degrees, and the angle Gidetermined based on dependencies
where n21the relative refractive index at the interface optical element external environment", defined as the ratio of the refractive index of the external environment n2the refractive index of the material of the optical element n1,
αwyh- the angle at which dissemination is aneesa i oa beam of light that belongs to the set of rays emitted by the led, which lies in the range of angles from 0 to 90 degrees, and αwyhfound by pre-building pattern DNIradiation emitted by the used in the led light-emitting crystal, which is determined on the basis of experimental data, and also display in the same coordinate system of the pattern bottomsothe radiation that you get from the led, and the subsequent graphical location for each selected angle αWHsuch angle αwyhwhere the magnitude of the light flux on the diagrams DNIand DNoequal.
The invention is illustrated by drawings, are presented in figures 1-3, where figure 1 shows a General view of the proposed led; figure 2 presents the pattern of light-emitting crystal bottomsIand led DNoin Fig 3 shows an example graphical determination of the coordinates of points Ai.
For part of the claimed led optical element provided required distribution of light flux in a predetermined spatial angle, the coordinates of the points of his profile determined from the condition of normalization pattern svetol the expectation of the crystal (CF I), which is determined experimentally, and pattern (CFo)that you want to get from the led, the same luminous flux.
The basis of this approach is the idea (see figure 1)that for any solid angle (ΘI i), which applies a luminous flux emitted by the crystal, and which is defined in the selected location of the points of the profile of the optical element coordinate system flat angle αWHthat there was such a solid angle (Θo i), which applies the same amount of luminous flux emitted by the led, and which is determined in the above coordinate system flat angle αwyh.
In accordance with the above (see figure 2) for each corner αWHfind the angle αwyhwhere the magnitude of the light flux on the diagrams DNIand DNoequal. This operation is performed for the set of rays emanating from a point Of origin, which adopted the geometric center of the active region of the crystal angles αWHin the range [0; 90] degrees.
Next (see figure 3) for each beam iIcoming from the point Of angle αWHincident on the surface of the optical element at the point the Ai will have the Yat (relative to the x-axis) angle G ithe tangent to the refractive surface of the optical element that the refracted beam ioout of the led at an angle αwyh. However, based on geometric constructions, based on the laws of geometrical optics, the angle Gimust satisfy the following system of equations:
q is the angle of incidence of the beam iIon the refracting surface having the angle of Giat the point Aiand q' is the angle of refraction of a given beam of a specified refractive surface.
Since the incidence angle q and angle of refraction q' bound by the law of Snell's law:
where n2is the refractive index of air, a n1is the refractive index of the material of the optical element, the angle Gican be expressed as follows:
where n21the relative refractive index at the interface optical element external environment", defined as the ratio of the refractive index of the external environment n2the refractive index of the material of the optical element n1. If the external medium is air, then n21equal to the inverse value of the refractive index of the optical element.
Because as the initial parameter set characteristics is th size of the optical element, that is, the maximum linear dimension, which is the set value of the height of the optical element or set the value of its diameter, the initial point of the profile of the optical element And0take the coordinates of a point lying on the axis of ordinates at distances equal to the height or diameter of the optical element, from the starting point of the coordinate system O.
The coordinates of each subsequent point of the profile of the optical element Aiin the selected coordinate system are defined as the coordinates of the point of intersection of the line emanating from the origin O at an angle αWHdirect, outbound from the previous point Ai-1angle Gito x-axis, shown in dot Andi-1.
It is essential that when the coordinates of the points of the profile of the optical element takes into account not only the optical properties of its material, but the individual character of the luminescence light-emitting crystal, which is caused by the material and the topology of the crystal. Pattern DNIis determined by measuring the spatial distribution of the light flux in the spatial angle of 360 degrees with the help of the measuring system including the optical bench installed on the sensor with the appropriate recording equipment and turning the tol with located on it and is placed in the holder of the investigated crystal, covered with a material, which is made of the optical element.
Thus, the claimed led, through the use of the optical element, the profile of which is defined in the manner described above with regard to the optical properties of the material and the optical characteristics of light-emitting crystal, provides the formation of a desired pattern of radiation of the light beam with a high degree of accuracy.
The inventive led (figure 1) comprises a base 1, which is used, in particular, the mounting plate is installed on the light emitting crystal 2. The crystal 2 is covered with the optical element 3, made of a translucent material, which has a light guiding aspherical outer surface formed by rotating the curve f(x) around the axis of symmetry O-O' of the led, the coordinates of the points in the coordinate system, the beginning Of which coincides with the geometric center of the active region of the crystal 2 and the y-axis is along the symmetry axis of the crystal 2, determined in the manner described above.
For determining the angular coordinates of Gieach of the points Aipreviously (figure 2) for each αwyha graphical way to find it αwyhwhere the light flows in the diagrams of Dnfh, Dnyh represented in the same coordinate system, equal. Then determine the values of the angles Giin accordance with the dependence (3).
Next, find the coordinates of the points of the profile of the optical element (figure 3). To do this, lay along the ordinate axis a distance equal to the height or diameter of the optical element, and get the value of the coordinates of the initial point And0. Then find the coordinates of points A1why spend from a point On the ray with angle αWHand from point a0carry out a direct angle G1and for the coordinates of points A1take the coordinates of the point of intersection of these lines. Then find the coordinates of point a2why spend from a point On the ray with angle αWHand from point A1carry out a direct angle G2to x-axis, shown at point A1and for the coordinates of points A2take the coordinates of the point of intersection of these lines. This operation is carried out for many (about 1500-2000) rays emitted by the crystal angles αVH lying in the range of angles from 0 to 90 degrees.
For the manufacture of an led using a semiconductor light-emitting crystal 2, for example, semiconductor light-emitting crystal-based solid solutions of elements of the III and V groups of the periodic table. The crystal 2 and the elements of the electric circuit (not shown) is asmamaw based (circuit Board) 1 and close the optical element 3, made of translucent material, for example, organic or inorganic optically transparent compound by casting of a specified compound in filling the form.
The device operates as follows. When power is supplied, the light-emitting crystal 2 emits a luminous flux, which is emitted by the led after passing through the light guiding surface of the optical element 3. The led provides obtaining the required luminous flux at a given angle of radiation.
Led containing a light-emitting crystal, covered with made of translucent material of the optical element which has an aspherical shape of the outer surface obtained by rotating around the symmetry axis of the led curve f(x)built taking into account the optical properties of light-emitting crystal and the material of the optical element, wherein the light guiding surface is, in this case the curve f(x) in the coordinate system, the point of which coincides with the geometric center of the active light-emitting region of the crystal that has a starting point And0located on the ordinate axis at a distance corresponding to the characteristic size of the led, which used the set value of the height of the optical element or the acceptable value of its diameter, and is formed by a set of points Andi(i=1, 2,..., n), the coordinates of each of which are taken coordinates of the point of intersection of the line emanating from the origin at an angle αWHto the axis of the ordinate, direct, outbound from the previous point Andi-1angle Gito x-axis, shown at point Ai-1when this angle αWHis the angle that extends iIa beam of light that belongs to the set of rays emitted by the light emitting crystal, which is selected from a range of angles from 0 to 90°and the angle Giis determined based on dependencies
where n21the relative refractive index at the interface optical element external environment", defined as the ratio of the refractive index of the external environment n2the refractive index of the material of the optical element n1,
αwyh- the angle that extends ioa beam of light that belongs to the set of rays emitted by the led, which is in the range of angles from 0 to 90°, and αwyhfound by pre-building pattern DNIradiation emitted by the used in the led light-emitting crystal, which is determined on the basis of experimental d is the R, and display in the same coordinate system of the pattern bottomsothe radiation that you get from the led, and the subsequent graphical location for each selected angle αWHsuch angle αwyhwhere the magnitude of the light flux on the diagrams DNIand DNoequal.
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