Light-emitting diode device. RU patent 2513645.
 Light-emitting diode device / 2513640Invention relates to optical instrument-making and specifically to a class of powerful LEDs used as alternatives to halogen lamps, as well as for overhead, industrial, facade and other illuminators. The LED device consists of one or more emitter chips arbitrarily arranged on a single flat substrate and coated with a common layer of a compound gel, optionally with phosphor crystals, wherein over each chip, the surface bordering with the air is spherical or aspherical with a radius at the peak of not more than 4 mm. The diameter of this surface D=(1.75…2.3)Dc, where Dc is the size of the emitting surface of the chip, wherein optical axes of said surfaces coincide, and the distance from the surface of the chip to the peak of the surface bordering with the air is not more than d=1.5 mm. The surface bordering with the air can have, over each chip around the entire periphery of the surface of the device, a limiting dimension D, wherein the height h and the width t of said device is not more than (0.1…0.15)D. The surface bordering with the air can be made on a plane-convex lens made of any optical material, including from organic glass, which is placed on the compound gel over the chip without an air space. |
 Light-emitting diode with moulded bi-directional optics / 2512110Invention can be used for light applications other than backlights, where the vertical beam pattern (collimation pattern) and the side-light emission pattern can be substantially independently specified. A double-moulded lens for a LED includes an outer lens moulded around the periphery of a LED chip and a collimating inner lens moulded over the top surface of the LED chip and partially defined by a central opening in the outer lens. The outer lens is formed using silicone having a relatively low refraction index such as n=1.33-1.47, and the inner lens is formed from silicon with a higher refraction index, such as n=1.54-1.76, to cause total internal reflection within the inner lens. |
 Light-emitting diode unit / 2512091LED unit, having a LED chip (10), a phosphor layer (12) and a filter layer (14), which is arranged such that light rays emitted from the LED chip (10), with a radiation angle less than a predetermined angle to the normal of the filter, are at least partially reflected, and light rays emitted from the LED chip higher than said predetermined angle to the normal of the filter layer (14) are transmitted. |
 Lighting device, display device and television receiver / 2511720Invention relates to the field of lighting equipment. Lighting device (12) is equipped with a number of optical source cards (20) with variety of point optical sources (17) installed at them. Average colour tone of point optical sources (17) (POS) at each card (20) is in equivalent colour range defined by the square, and each opposite side of two square sides has coordinate length in the axis X equal to 0.015, and each opposite side of two square sides has coordinate length in the axis Y equal to 0.015 at the colour space chromaticity chart of International Commission on Illumination as of 1931. POS are categorized into three colour ranges defined by squares, at that each side of the square has a length of 0.015. At that the second and third ranges adjoin the first one that includes the above equivalent colour range. POS cards include the first cards with installed point optical sources in the first and second colour ranges, and the second cards with installed point optical sources in the first and third colour ranges. The first and second POS cards are placed in sequence. |
 Led lamp (versions) / 2511564Invention relates to light sources operating on the base of semiconductor light-emitting diodes. Heat radiator is made of a set of plates with or -shaped form that contact with each other by a flat horizontal part. Length of horizontal part of each plate is bigger than the previous one as they approach the light-emitting diode. Ends of plates are incurved to the side opposite to heat-removal base. Heat removal base is placed under heat radiator. According to the second version length of horizontal parts of radiator plates increases from the outermost plates to the medium ones and heat-removal base is placed under the heat radiator between ends of incurved plates. According to the third version heat-removal base is placed at butt end of the radiator between ends of incurved plates. |
 Composite fluorescent material for solid-state achromatic light sources / 2511030Invention relates to light engineering and in particular to composite fluorescent materials used for solid-state achromatic light sources. According to the invention composite fluorescent material is suggested for solid-state achromatic light sources, which contain light-emitting diode that emits within range of 430-480 nm and a mixture of at least two luminophores; the first luminophore has cadmium-orange light emission within the range of 560-630 nm while the second one is taken from aluminate group of earth metals activated with europium. At that at least one light-accumulating luminophore having long-term afterglow, which practically unexcited by primary emission of the light-emitting diode is used as the second luminophore. Mass ratio of cadmium-orange luminophore and light-accumulating luminophore is the following: cadmium-orange luminophore is 10-90%, light-accumulating luminophore is 10-90%. |
 Luminescent ceramic converter and method of its production / 2510946Invention relates to production of luminescent ceramic converter. Proposed method comprises the steps that follow. (a) Integration of precursor material with ore-forming admixture to get raw mix. Note here that ore-forming admixture comprises, in fact, spherical particles of carbon or organic material. (b) Moulding raw mix to make raw billet of ceramic converter. (c) Heating of raw billet to remove ore-forming admixture and to form pre-calcined ceramic material with, in fact, spherical pores. (d) Sintering of pre-calcined ceramic material to form luminescent ceramic converter. Proposed luminescent ceramic converter comprises sintered monolithic ceramic material converting light with first wavelength in light with second wavelength. Ceramic material has, in fact, spherical pores with mean size of 0.5-10 mcm. |
 Circuit board, manufacturing method of card, display panel and display device / 2510712Invention is referred to circuit board with enhanced corrosion resistance, manufacturing method of the card, display panel and display device. Active matrix underlay (20) contains glass substrate (21); metal conductor (22) made at glass substrate (21); insulating film (24) of the gate covering metal conductor (22); interlayer insulating film (29) covering (24) insulating film (24) of the gate; and transparent electrode (33) shaped at interlayer insulating film (29). Conductor (22) contains contact area (55) where transparent electrode (33) is applied directly to conductor (22). Transparent electrode (33) passes over the contact area (55) so that it covers end surface (29a) of interlayer insulating film (29) faced to contact area (55) and end surface (24a) of insulating film (24) of the gate faced to contact area (55). |
 Light-emitting device and method of making said device / 2510103Method of making a light-emitting device includes a step of connecting a cover 3, having a frame part 4, with a housing 1, having a light-emitting element 2 which is fitted in the depression of the housing 1 in order to close the opening of the depression. At the connection step, a metal coupling agent 31, having better wettability with respect to the frame part 4 than with respect to the housing, is partially deposited on the housing 1 or the frame part 4, and is spread along the frame part 4 and connected, wherein the space is defined by the region of connection where the metal coupling element is connected, and the housing 1 and the frame part 4 are connected. |
 Light-emitting diode module and method for manufacture thereof / 2510102Method of making a light-emitting diode (LED) module according to the invention involves forming an insulating film on a substrate; forming, on the insulating film, a first earthing terminal pad and a second earthing terminal pad separate from each other; forming a first separating film which fills the space between the first and second earthing terminal pads, a second separating film which is deposited on the surface of the first earthing terminal pad and a third separating film which is deposited on the surface of the second earthing terminal pad; forming a first separating layer of given height on each of the separating films; sputtering seed metal on the substrate on which the first separating layer is formed; forming a second separating layer of given height on the first separating layer; forming a first mirror which is connected to the first earthing terminal pad, and a second mirror which is connected to the second earthing terminal pad by applying a metal coating on the substrate on which the second separating layer is formed; removing the first and second separating layers; connecting a stabilitron to the first mirror and connecting a LED to the second mirror; and depositing a fluorescent substance to fill the space formed by the first mirror and the second mirror. The invention also discloses another version of the method described above and the design of the LED module. |
 Heavy-power light-emitting diode / 2247444Proposed light-emitting diode based on nitride compounds of group III metals, that is aluminum, gallium, and indium (AIIIN), includes p-n junction epitaxial structure disposed on insulating substrate and incorporating n and p layers based on solid solutions of group III nitrides AlxInyGa1 - (x + y)N, (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), as well as metal contact pads for n and p layers disposed on side of epitaxial layers, respectively, at level of lower epitaxial n layer and at level of upper epitaxial p layer. Projections of light-emitting diode on horizontal sectional plane, areas occupied by metal contact pad for n layer, and areas occupied by metal contact pad for p layer are disposed on sectional plane of light-emitting diode in alternating regions. Metal contact pad for n layer has portions in the form of separate fragments disposed in depressions etched in epitaxial structure down to n layer; areas occupied by mentioned fragments in projection of light-emitting diode onto horizontal sectional plane are surrounded on all sides with area occupied by metal contact pad for p layer; fragments of metal contact pad for n layer are connected by means of metal buses running over metal contact pad insulating material layer applied to portions of this contact pad over which metal buses are running. |
 Light source with light-emitting component / 2251761Proposed light source emitting light in ultraviolet or blue light region (from 370 to 490 nm) and capable of producing high-efficiency white light affording control of luminance temperature within comprehensive range has light-emitting component that emits light in first spectral region and phosphor of group of optosilicate alkali-earth metals and that absorbs part of source light and emits light in other spectral region. Novelty is that phosphor used for the purpose is, essentially, europium activated bivalent optosilicate of alkali-earth metal of following composition: (2-x-y)SrO · x(Bau, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+ and/or (2-x-y)BaO · x(Sru, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+. |
 Photoluminescent semiconductor materials / 2255326Porous-structured semiconductor materials are modified by recognition element and exposing to electromagnetic radiation carries out photoluminescence reaction. Recognition elements that can be chosen from bio-molecular, organic and non-organic components interact with target to be subject to analysis. As a result, the modulated photoluminescence reaction arises. |
 Light-emitting diode device / 2258979Proposed device that can be used, for instance, in railway light signals built around light-emitting diodes has one or more photodetectors and set of optical filters additionally disposed on substrate. Each photodetector has its p region connected to its respective wire lead through contact pad; wire lead is passed through substrate hole and insulated from the latter; its n region is connected to its respective wire lead by means of conductor provided with metal or metal-plated contact made in the form of ring segment, all segments being integrated into ring by means of insulating inserts. Set of optical filters having similar or different spectral filtering characteristics is formed by parts of hollow inverted truncated cone whose quantity equals that of photodetectors; all parts are integrated through insulating gaskets into single hollow inverted truncated cone. Disposed on butt-ends of hollow inverted truncated cone are dielectric rings of which upper one has inner diameter equal to that of large base of truncated cone and outer diameter, to that of substrate. Dielectric ring has holes over its circumference for electrical connection of photodetector conductors and light-emitting chips to contacts in the form of ring segments. |
 Semiconductor source of infrared radiation / 2261501Device has emitting surface, recombination area, not less than one passive layer, transparent for emission with hv energy, at least one of layers is made with n-type of conductivity and at least one of said layers is positioned between recombination area and emitting surface, not less than one heat-draining surface and node for connection to outer energy source. Concentration of free carriers (n) and width of forbidden zone (E1) in aforementioned passive layer match relations: where hv and Δhv0.5 - quant energy and half-width of spectrum of emission, formed in recombination zone, respectively, eV, and ndeg - concentration of carriers, at which degeneration of conductivity zone starts, cm-3. |
 Photo-luminescent emitter, semiconductor element and optron based on said devices / 2261502Emitter has electro-luminescent diode of gallium arsenide, generating primary emission in wave length range 0,8-0,9 mcm, and also poly-crystal layer of lead selenide, absorbing primary emission and secondarily emitting in wave length range 2-5 mcm, and lead selenide includes additionally: admixture, directionally changing emission maximum wave length position as well as time of increase and decrease of emission pulse, and admixture, increasing power of emission. Photo-element includes lead selenide layer on dielectric substrate with potential barrier formed therein, and includes admixtures, analogical to those added to lead selenide of emitter. Optron uses emitter and photo-elements. Concentration of addition of cadmium selenide in poly-crystal layer of emitter is 3,5-4,5 times greater, than in photo-element. Open optical channel of Optron is best made with possible filling by gas or liquid, and for optimal synchronization and compactness emitter and/or photo-element can be improved by narrowband optical interference filters. |
 Semiconductor element emitting light in ultraviolet range / 2262155Proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 280 -200 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material, active layer with one or more quantum wells made of nitride material, barrier layer made of Mg doped AlXGaI-XN, and p contact layer made of Mg doped nitride material; used as nitride material for n contact layer is AlyGaI-yN in which 0.25 ≤ V ≤ 0.65; used as nitride material of active layer is AlZGaI ZN, where V - 0.08 ≤ Z ≤ V - 0.15; in barrier layer 0.3 ≤ X ≤ 1; used as nitride material in p contact layer is AlwGa1 - wN, where V ≤ W ≤ 0.7; active layer is doped with Si whose concentration is minimum 1019 cm-3; width "d" of active layer quantum wells is 1 ≤ d ≤ 4 nm; molar fraction of Al on barrier layer surface next to active layer is 0.6 to 1 and further reduces through barrier layer width to its boundary with p contact layer with gradient of 0.02 to 0.06 by 1 nm of barrier layer thickness, barrier layer width "b" ranging within 10≤ b ≤ 30 nm. |
 Semiconductor element emitting light in ultraviolet range / 2262156Proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 240 -300 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material AlXIInX2GaI-XI-X2N, active layer made of nitride material AlVIInY2GaI-YI-Y2N, and p contact layer made of Mg doped nitride material AlZIInZ2GaI-ZI-Z2N; active layer is divided into two areas; area abutting against contact layer is doped with Si and has n polarity of conductivity; other area of active layer is doped with Mg and has p polarity of conductivity; molar fraction of Al (YI) in p area of active layer is continuously and monotonously reducing between its boundary with n contact layer and boundary with p area of contact layer and is within the range of 0.1 ≤ VI ≤ 1; difference in VI values at boundaries of active-layer n area is minimum 0.04 and width of forbidden gap in active-layer p area at its boundary with active-layer n area exceeds by minimum 0.1 eV the maximal width of n area forbidden gap. |
 Light-emitting diode incorporating optical component / 2265916Proposed light-emitting diode has chip covered with optical component made of translucent material whose outer surface is of aspherical shape obtained due to rotation of f(x) curve constructed considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode; it is light-emitting surface. Curve f(x) in coordinate system whose origin point coincides with geometric center of light-emitting chip active area has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode; used as this size is desired height of optical component or its desired diameter; active area is formed by plurality of points Ai (i = 1, 2..., n). Taken as coordinates of each point are coordinates of intersection point of straight line coming from coordinate origin point at angle αini to ordinate axis and straight line coming from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light emitting chip and chosen between angles 0 and 90 deg.; angle Gi is found from given dependence. |
 Light-emitting diode incorporating optical component / 2265917Proposed light-emitting diode has light-emitting chip covered by optical component made of translucent material whose outer surface is aspherical in shape due to rotation of curve f(x) built considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode. This surface emits light and f(x) curve in coordinate system whose origin coincides with geometric center of active area of light-emitting diode has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode which is, essentially, optical component height or its desired diameter, and is formed by plurality of points A, (i = 1, 2... n); coordinates of intersection point of straight line drawn from coordinate origin point at angle αini to ordinate axis drawn from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1 are taken as coordinates of each of them;; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light-emitting chip chosen between 0 and 90 deg. Angle Gi is found from given dependence. Angle αouti is found by pre-construction of directivity pattern DPin of beam emitted by light-emitting chip. Coordinates of A points are checked by means of light-emitting diode simulator that has optical component whose outline is formed by plurality of Ai points as well as light-emitting chip whose beam directivity pattern is DPin; this chip is used as distributed light source having three-dimensional emitting area whose size and appearance correspond to those of emitting area used in light-emitting diode of light-emitting chip. Light emitting points in light-emitting chip of simulator under discussion are offset relative to origin of coordinates within its emitting area; coordinates of Ai points are checked by comparing directivity pattern DPout and directivity pattern DPsim of beam emitted by light-emitting diode simulator, both displayed in same coordinate system. When these directivity patterns coincide, coordinates of points Ai function as coordinates of points forming curve f(x); if otherwise, coordinates of points Ai are found again, and DPoutj is given as directivity pattern DPout whose points are disposed above or below the latter, respectively, depending on disposition of directivity pattern DPsim below or above directivity pattern DPout in the course of check. |
FIELD: physics, optics.
SUBSTANCE: invention pertains to optical instrument-making. The LED device according to the invention includes one or more emitter chips arranged arbitrarily on a single flat substrate and coated with a common layer of a compound gel, optionally with phosphor crystals, and a plate made of optical material placed on the flat surface of the gel without an air space. On the inner side of the plate bordering with the gel, there are mutually perpendicular grooves whose faces are inclined to the surface of the gel at an angle α=55°…65°, and the depth of the grooves is not more than h=0.8 mm. The vertices of the grooves form squares, the length of the sides of which is D=(1.75…2.3)Dc, where Dc is the size of the side of the chip, wherein D=D0, where D0 is the distance between optical axes of the emitter chips, wherein optical axes of the squares of the incision and corresponding chips coincide.
EFFECT: invention improves energy parameters of the device, specifically considerable increase in axial luminous intensity and low energy losses owing to increase in the radiation capturing angle of the chip to σ1=±75°.
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The invention relates to the field of optical instrument engineering, namely to the class of high-power LEDs "Chip-on-board", which are used as analogues of halogen lamps and ceiling-mounted, industrial, facade and other lamps.
The use of crystals, emitting light in different colors optical range, gives the opportunity for led devices with a wide variety of colors and shades of light flux. The main advantage of these devices is their large energosberegayushie and large, almost unlimited, lifetime, compared with standard halogen lamps.
The most important energy parameters led devices are axial luminous intensity and indicatrix distribution of the luminous flux angle of divergence of a light beam at the output of the device.
Known industrial designs OWLS company "Optogan" [1], the description of constructions which are given in the paper [2]. They represent an array of one or more led chips that are installed on different topography on a single flat substrate and covered the total layer of compound-gel crystals phosphor, with outer surface of the gel in contact with the air, is flat. The technical nature of these devices is closest to offer led to a device and are the prototype.
The design of the system does not allow to receive high power parameters, as used angle of coverage of direct radiation of the crystal is not within + / - 40 degrees, while direct radiation of the crystal is distributed in the corners ±90 degrees, which corresponds to the radiation indicatrix of a crystal is represented in figure 1. This leads to the loss of energy not less than 25%, which is the main disadvantage of the prototype.
The aim of the invention is to increase energy parameters of led devices such as OWLS, namely, a significant increase axial light when using direct radiation crystal chip with an angle of coverage of radiation not less than + 75 PM degrees.
This goal is achieved by led the device consists of one or more radiators-chip installed on any topography on a single flat substrate and covered the total layer of compound-gel, possibly with the crystals phosphor, and on the flat surface of the gel installed without air gap plate of optical material, inside of which, bordering gel, mutually perpendicular cut grooves, which faces tilted to the surface of the gel on the angle of? = 55 degrees...65 degrees, the depth of cutting grooves not more than h=0,8 mm The top of the grooves form squares whose sides are D=(1,75...2,3)D c , D c - size side of the chip, and D=D 0 D 0 is the distance between the optical axis of emitter-chips, while the optical axis of the squares of cutting and related chips are the same.
In figure 2 as an example presents a schematic diagram of the proposed led devices. It consists of emitters chips (1), placed on a flat substrate (2) and covered the total layer of compound gel (3), with a flat surface on the border gel-air. On the surface of the gel installed without air gap plate (4) of the optical material. On the inner side of the plate mutually perpendicular cut grooves (5), which faces tilted to the surface of the gel on the angle of? = 55 degrees...65 degrees and depth of cutting grooves not more than h=0,8 mm The top of the grooves form squares whose sides are equal to D=(1,75...2,3)D c , D c - size side of the chip, with D=D 0 D 0 is the distance between the optical axis of emitter-chips, while the optical axis of the squares of cutting and related chips are the same.
Concrete construction led device corresponding to the above description of the invention is developed on the basis of OWLS chips (1) of which the thickness of t=0.15 mm have a square form with the size of the hand D c =1.15 mm, and the chips are located on the substrate (2) with the distance between the optical axis of the neighboring chips D 0 =2.5 mm substrate size 10 x 10 mm posted 9 chips and potted-gel (3), and the distance from the radiating surface of a chip to a flat surface gel air is equal to d=0,35 mm, the refractive index of the compound-gel n 1 =1,54. On the flat surface of the gel installed without air gap plate (4) of the optical material - polymethyl methacrylate (PMMA), the refractive index which n 2 =1,49.
On the inner side of the plate mutually perpendicular cut grooves (5), which faces tilted to the surface of the gel on the angle of? = 60 degrees, and the cutting depth h=0.8 mm, total thickness plate of 1.5 mm The top of the grooves form squares whose sides are equal to D=2.5 mm, which corresponds to the value D=2,17 D c and equal to the value D 0 . The optical axis of the squares of cutting and related chips are the same.
This design allows the use of the angles of coverage radiation crystals chip:
- direct radiation through the gel and the plate within σ 1 =±42 degrees;
- radiation through the gel, reflected on the law of total internal reflection from the faces in the environment PMMA, within σ 1 =±(42°...75°).
Thus, the total angle of coverage of radiation crystal chip for this led device equal Σσ 1 =±75-degree, due to which the amount of energy used radiation chip is Σ=-90% OF E 0 , where E 0 - the radiation energy of the chip, i.e. energy losses are reduced to 10%.
The positive effect of the proposed design led device is that it provides for the increase of energy parameters at the output of the system through the use of significantly increased the angle of coverage of radiation chip within σ 1 = + 75 PM degrees (against σ 1 =±40 degrees in the prototype), and for this reduction of energy losses of up to about 10% (compared to about 25% in the prototype).
Sources of information
[1] an Electronic document. "Powerful LEDs"" Chip-on-board" http://www.optogan.ru/products/leds/chip-on-board.
[2] Article. Amuchina, Pamesta. "Technology of CHIP-on-BoARD: Basic processes and equipment". Electronics. Science. The technology. Business, 2008, №3, 2008, p.54-58.
Led device consisting of one or more radiators-chip for any topography on a single flat substrate and covered total layer of compound-gel, possibly with crystals phosphor, wherein on the flat surface of the gel installed without air gap plate of optical material, inside of which, bordering gel, mutually perpendicular cut grooves, faces which is inclined to the surface of the gel on the angle of? = 55 degrees...65 degrees, the depth of cutting grooves not more than h=0.8 mm, and the tops of the grooves form squares whose sides are D=(1,75...2,3)D c , D c - size side of the chip, and D=D 0 D 0 is the distance between the optical axis of emitter-chips, while the optical axis of the squares of cutting and related chips are the same.