Lighting device

FIELD: electricity.

SUBSTANCE: invention relates to lighting engineering. The lighting device includes illumination devices (40) which at voltage supply emit primary radiation and solid particles (64, 66) which surround the illumination devices (40) at least by sections and interact with the primary radiation. Concentration of particles (64, 66) changes at least in one direction from the illumination devices (40) from the first concentration section up to the second one.

EFFECT: provision of long-life interconnection of foil sheets and increase in the angle of radiation.

24 cl, 22 dwg

The invention relates to variants of the lighting device. In the first embodiment, the lighting device includes a lighting means, which when a voltage is applied emit primary radiation, and the phosphor particles, which at least sections are surrounded by the lighting means and which absorb the primary radiation and emit secondary radiation, wherein the concentration of the phosphor particles in at least one direction from the lighting means decreases from the first concentration of particles in the second particle concentration, the highest concentration of phosphor particles has a first region, which compared with other areas closest to the lighting means, and the lowest concentration of phosphor particles has a second area, which compared with other areas as far from the lighting means. In the second embodiment, the lighting device includes a lighting means, which when a voltage is applied emit primary radiation, and reflecting particles, especially particles of barium sulfide, barium sulfite, barium sulfate or titanium dioxide, which at least sections are surrounded by the lighting means and which interact with the primary radiation, wherein the concentration of reflective particles in at least one on the managing from the lighting means is changed from the first particle concentration to the second concentration of particles.

Lighting devices of this type known on the market as a lighting means increasing application are LEDs with light-emitting semiconductor structure. First of all, as interacting with the primary radiation of the solid particles used are known phosphor particles, which are manufactured from having color centers of transparent materials and absorb them falling on the radiation, the secondary radiation they emit radiation with at least one other wavelength. Thus, under suitable choice of the phosphor particles or mixtures of phosphor particles can be converted light emitted by the radiation into radiation with a different spectrum. Another type of interacting with the primary radiation of the solid particles may represent, for example, reflective particles, which can reflect and disperse them falling on the radiation.

Known lighting device specified first type often have a relatively small angle of radiation given their light from 120° to 160°.

The objective of the invention is to provide a lighting device specified in the beginning of the description of the type in which improved lighting effect.

This task in the first embodiment of the lighting device mentioned at the beginning of the type solved for scattola, the greatest concentration of phosphor particles is from 5-fold to 10,000-fold, preferably 10-fold to 100-fold, more preferably from 10 times to 20 times the lowest concentration of phosphor particles. In the second embodiment of the lighting device, this problem is solved due to the fact that by changing the concentration of reflective particles is reduced. The solution in both cases is achieved by changing the distribution of particles with a certain sign and the magnitude of the gradient in the direction from the lighting means, which provides a particularly intense effect light (light output). In this regard, it is preferable that the decrease in concentration occurred evenly.

It was found that when such distribution interacting with the primary radiation particles around the lighting means you can achieve a light structure of this type, which, for its part, gives light in all spatial directions. Thereby, it is possible to increase the angle of radiation of the lighting device. Additionally increases the brightness of the lighting device.

The concentration of the particles shows the number of particles per volume.

The light effect is even better if a) the highest concentration of reflective particles present in the first area, which compared with others is in other areas closest to the lighting means, and b) the least reflecting the concentration of particles present in the second area, which compared with other areas most remote from the lighting means. In this case, the concentration of particles with increasing distance from the lighting means is reduced.

Good lighting results are achieved when the maximum concentration of reflective particles is from 5 - to 10,000-fold, preferably 10 - to 100-fold, more preferably from 10 to 20 times the lowest concentration of reflective particles.

Thus favorably, if (a) the highest concentration of particles is from 500 to 20,000 particles per cubic centimeter, preferably from 1,000 to 10,000 and more preferably from 5,000 to 10,000 particles per cubic centimeter and (b) the lowest concentration of the particles is from 2 to 5000 particles per cubic centimeter, preferably from 2 to 2500, and more preferably from 2 to 1000 particles per cubic centimeter.

Technological advantage is, if the particles are kept in place relative to the lighting means through the bearing environment. When this proved to be particularly favorable, if the carrier medium is a silicone material, primarily elastic silicon, or resin, especially an epoxy resin or polyester resin.

Depending on the form employed chosen to replace the th environment volume you can achieve different lighting effects. It was found that with good light effect optically attractive if the carrier medium with the particles is cylindrical, conical, or hemispherical volume or volume, which includes the land in the form of a truncated cone, which moves in a spherical area. It turned out that a particularly beneficial if the carrier medium with the particles is U-shaped volume.

For the manufacture of illuminating means favorable, if the carrier medium with the particles located in the chamber of the lighting device.

Beneficial if the wall of the chamber at least parts consists of glass, plastic, primarily of epoxy resin or polyester resin.

It is possible to achieve the preferred light effect, if in the carrier environment, there are a few air bubbles. This turned out to be favorable, if the concentration of air bubbles in the carrier medium has a value of from 500 to 20000 air bubbles on cm³preferably from 1,000 to 10,000 and more preferably from 3000 to 5000 air bubbles on cm³.

Mostly air bubbles have a diameter of from 0.1 to 2 mm, preferably from 0.1 to 1 mm, and more preferably from 0.2 to 0.5 mm.

Particularly good light effect can be achieved if there are several specified carrier medium with particles of volumes that are to be the NII from each other. It is particularly useful was if there are two or three predefined carrier medium, with the particle volume, which is located at a distance from each other.

You can create a lamp with good lighting properties, if the volume is found in several of the installation areas of the radiating body. While on aesthetic grounds good if the radiating body is cylindrical and the installation area is made in the form useparallelgc he channels.

If the lighting means includes a semiconductor structure that emits light when voltage is applied, the lighting device can be manufactured with reduced power consumption. These lights are known as LEDs.

If at least one light-emitting semiconductor structure when voltage is applied emits blue light, you can resort to well-known led. However, mostly, the particles formed as a phosphor particles, which out of the blue radiation, which is emitted semiconductor structure, produce white light, and reflective particles that pass them falling on the radiation further.

Alternatively, the lighting means may include at least one semiconductor structure of the red, green and blue light. In e the om case, you can refuse the phosphor particles and as interacting with the primary radiation particles to use only reflecting particles.

To expand the spectrum of the lighting means can include at least one infrared semiconductor structure and/or at least one ultraviolet structure.

To achieve a good lighting effect is beneficial, if there are at least three layers, in which there are solid particles, the first phosphor particles and/or reflective particles with different concentrations of particles.

Further examples structural embodiment of the invention is further explained based on the drawings. They show:

Figure 1 is a partial cross-section of the lamp bulb, which is filled with luminescent and reflective particles in the carrier medium is located in a cylindrical chamber;

Figure - 2 corresponding to the figure 1 is a partial cross-section of a second example of structural embodiment of the lamp bulb, in which the chamber has a conical shape;

Figure - 3 corresponding to the figure 1 a partial section of a third example of structural embodiment of the lamp bulb, in which the camera has a hemispherical shape;

Figure - 4 corresponding to the figure 1 a partial section of a fourth example of structural embodiment of the lamp bulb, in which the chamber has a section in the shape of a truncated cone, which moves in a spherical section;

Figure 5 cross section of the led, the inner bands of the ü filled filled luminescent and reflective particles in the carrier medium;

Figure - 6 modification presented in figure 1 of the lamp bulb, in which the carrier medium is provided by the air bubbles;

Figure 7 corresponds to the figure 1 a partial section of a fifth example of structural embodiment of the lamp bulb;

Figure - 8 corresponding to the figure 1 a partial section of a sixth variant of the constructive execution of the lamp bulb, in which the carrier medium is made in the form of a glowing pin;

Figure 9 corresponds to the figure 8 is a partial cross-section of a seventh variant of the constructive execution of the lamp bulb, which includes two fluorescent probe;

Figure 10 corresponds to the figure 9 is a partial cross-section of the eighth variant structural embodiment of the lamp bulb, in which two illuminated pin is connected in a shining arc;

Figure 11 corresponds to the figure 8 is a partial section of a ninth variant of the constructive execution of the lamp bulb, which includes three lighted pin;

Figure - 12 modification presented in figure 8 lamp, in which instead of a glass bulb provided the reflector;

Figure - 13 luminous pin, as it is used in lamps according to figures 8, 9, 11, and 12;

Figure - 14 lighting means for lighting the bike or car, which includes a luminous probe according to figure 13;

Figure 15 clicks the consistent two opposite glowing pins according to the figure 13 pin lighting element;

Figure - 16 cylindrical lighting means, in which patterns of fluorescent probes are located in the installation channels transparent cylinder;

Figure - 17-section of the lighting means according to figure 16 there along the specified corner of the section line XVII-XVII;

Figure - 18 corresponding figure 17 cross-section of a modification of the lighting means according to figure 18, in which the installation channels are connected to each other;

Figure - 19-section of the lighting strips along section line XIX-XIX according to figure 20;

Figure 20 is a top view of a lighting strip according to figure 19;

Figure 21 cross section of the lighting panel along the section line XXI-XXI according to figure 22;

Figure 22 is a perspective view of a lighting panel according to figure 20.

In the figure 1 by the reference designator 10 marked the lamp bulb Assembly, which has a standardized mounting base 12. Structurally, the mounting base 12 may be made in the form of screw cap E27 Edison or E11. Can also be provided for all other standardized mounting bases, such as, for example, bayonet cap, connector cap, glass clamping cap and the like.

From the connecting regions of the mounting base 12 in the inner part there are two wires 14, 16, which shows the dashed lines. They lead from the connecting base 12 to the transformer 18 voltage, which is held inside the mounting base 12 of the housing 20 of the transformer. From the transformer 18 of the first voltage supply line 22 through the heat sink 24 leads to the first contact area 26 of the circuit 28 of the light chip. The second supply line 30 from the transformer 18 current through the heat sink 24 leads to the second contact area 32 of the circuit 28 of the light chip.

The lamp 10 with a bulb includes a bulb 34 of translucent material such as glass or epoxy resin, which together with the heat sink 24 limits the internal cavity 36 of the lamp 10 with the flask. If necessary, the bulb 34 of the lamp 10 with the bulb may perform the function of collecting optics.

Scheme 28 length chip includes four series-connected between the contact areas 26 and 32 of the circuit 28 of the light chip with a thin wire leads 38A, 38b, 38, 38d and a semiconductor structures 40A, 40b, 40C and 40d, which are shown in figure 1 only schematically. They are placed on the bottom 42 of the recesses 44 of the carrier substrate 46. The carrier substrate 46 made of sapphire glass, which is also known as corundum glass (Al₂O₃-glass).

Each semiconductor structure 40 includes three layers, which are provided with a reference symbol only for the semiconductor, Nikolai patterns 40A. The bottom adjacent to the carrier substrate layer 46 is a layer of n-conductivity, for example, of n-GaN or n-lnGaN. The middle layer 50 is a layer MQW. MQW is short for "Multiple Quantum Well". The MQW material is a superlattice, which is modified in accordance with the structure of the superlattice electronic band structure of semiconductor and respectively emits light with other wavelengths. By choosing the MQW layer can affect the spectrum of the given semiconductor structure 40 radiation. The top layer 52 is made of a semiconductor material with a p-conductivity of III-V, for example, of p-GaN.

Due to the radially surrounding the recess 44 of the edge region 54 of the carrier substrate 46 holds the cylindrical body 56, which is open toward the semiconductor structure 40 and is closed on the opposite carrier substrate 46 side end wall 58. The housing 56 is made of plastic and may be transparent or opaque. The housing 56 together with the carrier substrate 46 limits the camera 60, which, except for the recesses 44 in the carrier substrate 46 is also cylindrical.

The chamber 60 is filled carrier medium 62, which in the here described example of structural embodiment represented in the form of elastic silicone mass. In silicon mass 62 is divided phosphor particles 64 and reflect the s particles 66, who in their position held silicon 62 relative to the semiconductor structures 40.

Semiconductor structure 40 when the supply voltage emit ultraviolet light with a wavelength range from 420 nm to 480 nm. Using enveloping the semiconductor patterns 40 silicone mass 62 with phosphor particles 64 can receive the lamp 10 with a flask of white light. The phosphor particles 64 is made of having color centers solid state materials. To convert ultraviolet and blue primary radiation of the semiconductor structures 40 in white light uses three types of phosphor particles 64, which absorb UV and blue light, and they emit yellow and red. If necessary, you can optionally apply the phosphor particles 64, which themselves emit blue.

As materials for the reflective particles 66 are considered primarily sulphide of barium, barium sulfite, barium sulfate or titanium dioxide. Alternatively, as the material for the reflection particles 66 can also be used scandium oxide or zinc sulfide, and oxides of lanthanum and rare earth metals, such as ceroxide, neodinokimi, samarium oxide, europium oxide, gadolinium oxide, oxide disparity, oxide Holm, erbium oxide, thulium oxide, ytterbium oxide or lutetium oxide.

With what omashu reflecting particles 66 emitted by the semiconductor structures 40 radiation is directed inward silicone mass 62.

The concentration of phosphor particles 64 and reflection particles 66 is changed in the direction of the end walls 58 of the housing 56, i.e. in the direction from the semiconductor structures 40, and in this direction decreases. The maximum concentration of phosphor particles 64 and reflection particles 66 is in the first layer 68 of silicon mass 62, which is located closest to the semiconductor structures 40 inside the chamber 60. The minimum concentration of phosphor particles 64 and reflection particles 66 is in the second layer 70 of silicon mass 62, which is furthest removed from the semiconductor structures 40 and adjacent to the inner surface of the end walls 58 of the housing 56.

Between the first layer 68 and the second layer 70 are denoted by lowercase letters a To the intermediate layers, the concentration of the phosphor particles 64 and reflection particles 66 in the direction of end wall 58 of the housing 56 is uniformly decreases from layer to the next layer. This is clearly shown by the number shown in each layer of phosphor particles 64 and reflection particles 66. The boundary between two consecutive layers 68, and 70 indicated by the dotted line.

Depending on capacity, which operated semiconductor patterns 40 and which should be provided by the transformer 18 voltage through the continuous distribution the phosphor particles 64 and reflection particles 66 inside the silicone mass 62, you can create different light patterns with different external contours, which may cause the observer, for example, the feeling of a flame or light cone and which are formed based on semiconductor structures 40.

In figure 1 in phantom lines stylized marked outer contours of the spherical light patterns 72A and like a flame of light patterns 72b. Spherical light structure 72A is formed with a small operating voltage of the lamp 10 with the flask, while similar to the flame length structure 72b is manifested in increased operating voltage of the lamp 10 with the flask. When a suitable high operating voltage lights all located in the chamber 60 silicone weight 62; then a light structure has the shape of a cylinder.

In the manufacture of the lamp 10, the camera 60 can be in layers to fill flowable silicone oil, which previously had been mixed with the hardener and the corresponding desired particle concentration necessary number of phosphor particles 64 and reflection particles 66. Then silicone oil in a known manner cures in elastic silicone mass 62. After curing of the first layer on the first layer can be made accordingly the next layer of silicone material 62 with phosphor particles 64 and the reflective particles 66.

In order C is to address the camera 60 in this way, may be provided, for example, the fitting that is to be removed or blocked after the camera 60 is completely filled.

If this was helpful, if the corresponding concentration of phosphor particles 64 and reflection particles 66 is selected such that the cured silicone weight 62 seemed to the human eye from breast slightly to yellow-transparent. Among other things, this is achieved by the fact that the greatest concentration of phosphor particles 64 and reflection particles 66 respectively from 5-fold to 10,000-fold, preferably 10-fold to 100-fold, more preferably from 10 times to 20 times the lowest concentration of phosphor particles 64 or reflective particles 66.

In practice, the highest concentration of phosphor particles 64 and reflection particles 66 may be located respectively between 500 and 20,000 particles per cubic centimeter, preferably between 1000 and 10,000 particles per cubic centimeter, and most preferably between 5000 and 10,000 particles per cubic centimeter, whereas the lowest concentration of phosphor particles 64 and reflection particles 66 may have values respectively between 2 and 5000 particles per cubic centimeter, preferably between 2 and 2500 particles per cubic centimeter, and more preferably between 2 and 1000 particles per cubic centimeter.

In the following modification of the carrier medium 62 may consist of translucent cured state of the resin, e.g. epoxy resin or polyester resin. In this case, the layers 68, and 70 of the carrier medium 62 can be obtained respectively by solidification of layers applied in a liquid state resin to which was added the hardener, as is in itself known and which has previously been mixed with the corresponding desired particle concentration necessary number of phosphor particles 64 and reflection particles 66.

In the following modification of the carrier medium 62 may take the appropriate chamber 60 volume without limitation the housing 56. For this purpose, the housing 56 after complete solidification of the carrier medium 62 is removed, and thus serves only as a molding form for the carrier medium 62.

On the figures the x 2, 3 and 4 show other examples of structural embodiment of the lamp 10 with the flask, which differ from those shown in figure 1, the lamp 10 with the flask, respectively, only the form of bounding the chamber 60 of the housing 56. The individual layers of the carrier medium 62 in figures 2, 3 and 4 for clarity, not equipped with their own reference designations, were also omitted marking the boundary layer dotted lines. If not explained otherwise, the above relative to the lamp 10 with a bulb according to figure 1 is really on the meaning respectively for lamp 10 with a flask according to figures 2 through 4.

In the lamp 10 with a flask according to figure 2 in place of the housing 56 is provided a cone-shaped housing 74 so that the carrier medium 62 is conical volume inside the cone, with the exception of the recesses 44 in the carrier substrate 46, the chamber 76. The cone-shaped housing 74 is located so that its tip is separated from the semiconductor structure 40. Under suitable operating voltage educated here light structure may also take the form of a cone.

In the lamp 10 with a flask according to figure 3 in place of the housing 56 is provided with a hemispherical body 78, so that the carrier medium 62 is a cone-shaped volume within hemispherical, with the exception of the recesses 44 in the carrier substrate 46, the camera 80. Hemispherical housing 78 is positioned so that its code is separated from Polop vodnikova structure 40. Under suitable operating voltage educated here light structure may have the shape of a hemisphere.

In the lamp 10 with a flask according to figure 4, instead of the housing 56 includes a housing 82, which includes a section 82a in the form of a truncated cone, which moves in a spherical section 82b. The housing 82 their portion 82a in the form of a truncated cone seated on the edge region 54 of the carrier substrate 46. Thus, the carrier medium 62 is an appropriate volume inside the chamber 84, which, except for the recesses 44 in the carrier substrate 46 has an area in the shape of a truncated cone and a hemispherical region. Under suitable operating voltage educated here light structure may also have a corresponding shape.

The figure 5 shows the led 86, which includes a spherical transparent body 88 with made with the possibility of removing part a cover. Case 88 limits the camera 90, which is corresponding to the carrier substrate 46 carrier substrate 92, which carries the semiconductor element 94, which corresponds to the semiconductor elements 40. The carrier substrate 92 is held the first connection terminal 96, which passes through the part a cover outwards and rigidly connected with the part 88a of the cover. The second connection terminal 98 also passes through a portion 88a of the cover 88, with which he is still connected, from the chamber 90 of the led 86 to the outside. The housing 88 in the led 86 performs the function of the camera 60 in the lamp 10 with a flask according to figures 1-4.

The semiconductor element 94 through the wire leads 100 and 102 connected to the connection terminals 96, 98, and through them it may be submitted to the working voltage.

The camera 90 led 86 is filled carrier medium 62, which is divided phosphor particles 64 and reflection particles 66, as explained above in connection with the lamp 10 with a flask according to figures 1-4.

If the carrier medium 62 should be used stretchy silicone mass, in the manufacture of led 86 housing 88 with the removed part 88a of the cover layers can be filled with flowable silicone oil, which previously had been mixed with the hardener and the corresponding desired particle concentration necessary number of phosphor particles 64 and reflection particles 66. Then silicone oil in a known manner cures in elastic silicone mass 62, After curing of the first layer on the first layer can be made accordingly the next layer of silicone material 62 with phosphor particles 64 and the reflective particles 66. For this purpose, the housing 88 may be of the fitting, which is not shown.

Using LEDs 86 light can be given in an extensive area of 360°.

In practice the, if necessary, the average diameter of the chambers 60, 76, 80, 84 in the lamp 10 with a flask according to figures 1-4 and chambers 90 of the led 86 is, for example, from 1 to 300 mm, preferably from 1 to 200 mm, and more preferably from 3 to 30 mm, Height of chambers 60, 76, 80, 84 or 90 in practice is based on semiconductor structures 40 or semiconductor structures 94, for example, from 3 to 300 mm, preferably from 3 to 150 mm, and more preferably from 10 to 60 mm

The figure 6 shows another lamp 10 with a bulb, which is different from the lamp 10 with a bulb according to figure 1 only by the fact that in the intermediate layers (D-in the chamber 60 along with the phosphor particles 64 and the reflective particles 66 are air bubbles 104, of which only one is supplied in figure 6 reference designator.

Air bubbles 104 each layer D is To be created, for example, when the above-described layered filling the chamber 60. This may occur, for example, by the fact that supplied hardener flowable silicone oil, in which for the desired concentrations were added to the required number of phosphor particles 64 and reflection particles 66, before the tank is intensive stirring and, thus, how would beating, so in silicone oil, the air is introduced in the form of air bubbles 104. If necessary, the air bubbles 104 can also have Atisa in advance and only then in silicone oil mixed with air bubbles 104 is added to the number of phosphor particles 64 and reflection particles 66, which is required for the respective desired concentrations of particles.

The concentration of air bubbles 104 within each layer can be affected, for example, the intensity of the whipping or the design of the mixer or beater. In practice turned out to be favorable, if the concentration of air bubbles 104 has a value of from 500 to 20000 air bubbles on cm³preferably a value of from 1,000 to 10,000 air bubbles on cm³and particularly preferably a value of from 3000 to 5000 air bubbles on cm³. Thus air bubbles 104 predominantly have a diameter of from about 0.1 to 2 mm, preferably from 0.1 to 1.0 mm, and particularly preferably from 0.2 to 0.5 mm.

In this example, the structural embodiment of the lamp 10 with the flask predefined lower three layers A, B and C, the thickness is selected so that the air bubbles layer 104 D located at distances from 1 to 10 mm from the semiconductor structure 40.

In the layers 68, A, B, C and 70 air bubbles 104 is not provided. However, when modifications in these layers or some of these layers of air bubbles 104 can be implemented by the aforementioned method.

It turned out that if the silicon mass 62 are air p the bubbles 104, you can achieve different lighting effect of the lamp 10 with the flask.

As mentioned above, the layers 68, and 70 silicone mass 62 with phosphor particles 64, reflective particles 66 and/or air bubbles 104 in the respective lamps 10 with a flask according to figures 1-4 and 6 can be formed in various ways, for example by layer-by-layer filling of the respective housing 56, 74, 78 and 82 and the subsequent installation of the hardened layer 68, and 70 on the circuit 28 of the light chip, while the corresponding housing 56, 74, 78 or 82 can be mounted at the same time or may be previously removed. Alternatively, the layers 68, and 70 can also be applied by known techniques of extrusion and injection molding directly on the circuit 28 of the light chip and there to cure. This manufacturing method is particularly suitable in the production of large quantities.

The outer contours of the silicone mass 62 in the form of layers 68, and 70 are not limited to those defined above housings 56, 74, 78 or 82. Through the use of other buildings or individual geometric shapes using the technology of extrusion and injection molding the outer contours of the silicone mass 62, which is composed of layers 68, and 70 may be formed in accordance with the wishes. The number of layers between the layers 68 and 70 may also change

Not shown on here a modification of the concentration of phosphor particles 64 and/or reflective particles 66, starting from the position of the semiconductor elements 40, in the direction of the first layer 68 of the carrier medium 62 and in the direction of the second layer 70 may be uniformly reduced.

The figure 8 shows the lamp 10 with the flask in which the housing 56 with the carrier substrate 46 and the semiconductor elements 40 form a luminous pin 108 is approximately rod shape. In the shown example, the structural embodiment it is located approximately along the axis of the bulb 34 on the base plate 110, which, in turn, is located on the heat sink 24. The carrier substrate 46 glowing pin 108 corresponds to the carrier substrate 46 of the lamp 10 with a flask according to figure 1, but differs from the latter in directions parallel to the bottom 42 of the carrier substrate 46 made thinner. In the recess 44 of the carrier substrate 46 glowing pin 108 are only two semiconductor element 40a, 40b.

To ensure heat removal from the semiconductor elements 40a, 40b in the heat sinks 24 integrated fan 112, which is known from the special powered by energy from the transformer 18 voltage and removes heat from the carrier plate 110.

The fan 112 of this type can be provided in all described examples of constructive perform. The fan 112 can operate with constant speed. Alternatively, the rotational speed of the fan 112 may also change depending on the temperature of the semiconductor elements 40.

Shown in figure 9, the lamp 10 with two illuminated bulb pin 108 is located on the base plate 110 and feed on the energy through the transformer 18 current.

Two such glowing pins 108 are shown in figure 10 modification on its opposite the base plate 110 ends are connected by an inter-connector 114, to which the housing 56 both connected with each other fluorescent probes 108 are respectively connected to one of the U-shaped housing 116. Thus the carrier medium 62 in the lamp 10 with a flask according to figure 10 is approximately U-shaped volume.

Shown in figure 11 of the lamp 10 with the bulb as the next modification on the base plate 110 are three lighted pin 108. With three luminous pin 108 can be located arbitrarily, for example in series, as shown in figure 11, at the corners of an equilateral triangle or in an asymmetrical manner. The passage of the supply conductors 22 and 30 to the respective contact areas 26 or 32 luminous pins 108 their reasons brazen is gnosti on figure 11 are not shown.

Lamp 10 with a bulb according to figures 9 and 11 contain correspondingly increased, educated carrier medium 62 and the contained phosphor particles 64 and the reflective particles 66 volumes that are specified by the relevant body 56 of each of the luminous pin 108. In other words, the lamp 10 with envelopes according to figures 9 and 11 contain increased specified carrier medium 62 with phosphor particles 62 and the reflecting particles 66 volumes, which are located at a distance from each other.

The figure 12 shows a reflector lamps 118, which largely corresponds to the lamp 10 with a flask according to figure 8, with the difference that in reflex lamp 118 no bulb 34, and provides a known reflector 120, which opened in pointing from the carrier plate 110 directions and, thereby, sets the output light opening, through which extends a focused reflector 120 light.

The figure 13 shows the lighting element 121, which is formed only illuminated by the pin 108, the carrier substrate 46 which is located on the base plate 110, whose path in the light corresponds to the same carrier substrate 46. As can be seen in figure 13, the contact region 26 and 32 on the carrier substrate 46 is connected through conductor 122 with a wire output 124 or conduit 126 with a wire output 128. Wire 124, 128 protivojishemicescoe substrate 46 protrude from the side of the carrier plate 110. Performed similarly glowing pin 108 can as standard LED mounted on the corresponding Board.

A large number of fluorescent probes 108 or lighting elements 121 can be used as a light source, for example, in videoproektory devices. Consequently several glowing pins 108 or each glowing pin 108 separately can work together with the corresponding reflector, which focuses the light in the desired direction.

The figure 14 shows the following example of the application of a lighting element 121 or glowing pin 108 lamps 110, as it can be used in lighting systems rental and/or vehicles. For this purpose, the lamp 130 includes corresponding standard connector cap 132, which is only schematically shown in figure 14, and secured on the flask 134 which surrounds the carrier medium 62 in the housing 56 glowing pin subject a short distance.

The figure 15 shows the pin lighting element 136, which is formed from two lighting elements 121 that are adjacent to each other on their opposite the carrier substrate 46 mechanical parties. The corresponding luminous pins 108 or lighting elements 121 at such location can be fixed in not shown here, a single housing. About the and glowing pin 108 to stabilize can be optionally bonded to each other protivoiadie mechanical parties.

Whip lighting element 136 may be of a different length, especially from 1 to 50 cm, preferably from 2 to 10 cm

In figures 16 and 17 by a link 138 is marked cylindrical lamp, which includes a transparent light cylinder 140, which can be manufactured, for example, of glass or acrylic glass. In practice lighting the cylinder 140 has a diameter of from 3 to 100 mm, preferably from 8 to 30 mm and more preferably from 5 to 15 mm, but, nevertheless, can be made arbitrary value.

Lighting the cylinder 140 is coaxial to its longitudinal axis, a passage 142 and eight parallel flow channels 144, they all have a round of constant cross-section. Of flow channels 144 in figures 16 and 17 respectively only one has a reference designation. Preferably, the lighting cylinder 140 includes from one to ten shafts 142, 144, it is not always necessary to provide the Central entrance channel 142. Cross-section of the flow channels 142, 144 may also deviate from the circular form.

On the mechanical side 146 of lighting cylinder 140 holds the plate 148 of the bottom is consistent with lighting cylinder 140 external circuit.

In ducts 142 and 144 is the one held by the plate 148 of the bottom carrying substrate 46, which in predlagaemom example of structural embodiment carries only the semiconductor structure 40. Through channels 142 and 144 in lighting cylinder 140 limit one cylindrical chamber 150, the volume of which is filled carrier medium 62 in which are held the phosphor particles 64 and reflection particles 66 in the layers 68 and 70 and do not have their own reference symbols lying between layers of different densities of particles. If the various ducts 142, 144 are applied to various semiconductor structure 40, which emit red, green and blue together to create white light, the phosphor particles 64 may be waived.

Thus, in ducts 142, 144 lighting cylinder 140 is substantially corresponding luminous pin 108 structure 152 glowing pin, which only has its own bounding the chamber 150 of the housing. To provide all ducts 142, 144 lighting cylinder 140 is similar to the structure 152 glowing pin need not, therefore, a passage 140 in figure 17 are shown for illustration purposes empty.

The contact region 26 and 32 on the carrier substrate 46 are supplied with power by conductors 154 and 156, which are not here representing additional interest contacts can be connected to the mains or batteries.

If necessary, lighting cylinder 140 at its second end side 158 can nest the pad 160, which in this proposed example of structural embodiment shown by dashed line.

In practice, through channels 142, 144 in lighting cylinder 140 have a diameter of from 0.1 to 15 mm, preferably from 1 to 10 mm, and more preferably from 2 to 5 mm Diameter shafts 142, 144 in the light cylinder 140 may be different from each other and, as a rule, depend on the size set in them the semiconductor element 40. Himself lighting the cylinder 140 has a length of from 5 to 800 mm, preferably from 20 to 150 mm and more preferably from 20 to 50 mm, but if necessary, can be made longer or shorter.

In shown in figure 18 modification lamp 138 through channels 142, 144 are connected to each other on the side 146 of the lighting of the cylinder 140, for which there is made a recess 161 in the form of circular plates. In the recess 161 are closest to the semiconductor structures 40 layers 68 and a silicone material 62, which has the phosphor particles 64 and reflection particles 66. So the light from the semiconductor structures 40 can also be spread into surrounding structures 152 glowing pin.

In figures 19 and 20 shows the lighting strip 162, which has a flexible membrane 164, which limits the camera 165 and on one side has a large number of hemispherical protrusions 166, which the imp is tive to each other in the longitudinal direction of the lighting tape 162 at a small distance from each other. The protrusions 166 may also be different from the hemisphere geometry and can be, for example, is made conical. In one embodiment, the tabs 166 may also be provided.

On the opposite projections 166 of the inner surface 168 sheath 164 carries a printed conductive element 170 on which the semiconductor structure 40 in a known manner connected to each other. For example, several sets of semiconductor structures 40 can always be connected in series, with several sets connected in parallel.

Semiconductor patterns 40 are located so that each of the semiconductor structure 40 approximately in the center under the ledge 166.

Between the printed conductive element 170 and defined by the protrusions 166 of the inner surface 172 of the shell 164 are layers 68, And 70 of silicone material 62 distributed therein phosphor particles 64 and the reflective particles 66. The corresponding concentration of phosphor particles 64 and reflection particles 66 decreases from layer 68 to the layer 70 with increasing distance from the semiconductor structures 40. In the lighting strip 162 is also possible to abandon the phosphor particles 64, if applied to various semiconductor structure 40, which emit red, green and blue together to create white light.

Semiconductor the structure 40 by means not shown actual contacts, which are in themselves known, are supplied with power, if they are connected to the energy source.

In practice, the lighting strip 162 has a width of from 1 to 20 mm, preferably from 3 to 15 mm, and more preferably from 8 to 12 mm and a thickness of from 1 to 10 mm, preferably from 2 to 5 mm.

If the semiconductor structure 40 within the lighting tape 162 is activated, the lighting strip, primarily homogeneous, light, and discrete illuminated region on the place of the semiconductor structures 40 may not be recognized. Therefore, the lighting strip 162 may be applied in areas that were only used neon tubes or similar devices, such as light advertising. Lighting strip 162 may also be used to input light into the light guide element, for example in the light guide plate For this lighting strip 162 may be hung, for example, along the perimeter of the light guide plate on its narrow surface.

In figures 21 and 22 shows the plate of the lighting panel 174, in which the respective inner surfaces of two opposite narrow sides 176 and 178 surrounding the camera 175 casing 177 is connected a large number of semiconductor elements 40 respectively on one printed conductive element 180 and 182, as it has been explained regarding lighting tape 162

In each direction from the printed conductive elements 180 and 182 are layers 68, A, B, and C of silicone material 62 distributed therein phosphor particles 64 and the reflective particles 66, so that the two layer are adjacent to each other in the center between the printed conductive elements 180 and 182. The concentration of particles in both layers 68 are the same, it's the same in both layers A, in both layer or In both layers C.

The concentration of the phosphor particle layer 64 from 68 through neighbouring layers A and B in the direction of layer C is reduced. The concentration of reflective particles 66 of the layer 68 through neighbouring layers A and B in the direction of layer C, on the contrary, increases. In the lighting panel 174 is also possible to abandon the phosphor particles 64, if applied to various semiconductor structure 40, which emit red, green and blue, and together create white light.

Lighting panel 174 due to the silicone material 62 is flexible and it can be given various forms and, if necessary, to fix them.

In practice, the thickness of the lighting panel 174 is from 1 to 20 mm, preferably from 3 to 5 mm.

Lighting panel 174 with the active semiconductor structures 40 gives light with a uniform light distribution through its main surfaces 184, one of which is seen in figure 22.

All explained examples, the structural embodiment of figures 1-18 always provides a large number of layers 68, and 70 of the silicone mass 62, the concentration of the phosphor particles 64 and reflection particles 66 in the direction from the semiconductor structures 40 changes, primarily decreases in this direction. In the examples structural embodiment of figures 19-22 there are fewer layers of silicone mass 62 with different concentrations of phosphor particles 64 and reflection particles 66.

To obtain good color lighting or lighting effect, first of all, it is sufficient if there is at least three such layers or area where the phosphor particles 64 and/or reflective particles 66 with different concentrations. The change primarily decrease, the concentration of phosphor particles 64 or reflective particles 66 in the direction from the semiconductor structures 40 may be neravnomern is, that is, with different step, even though the change leads to better results.

1. Lighting device, comprising:
a) illuminating means (40; 94), which, when the supply voltage emit primary radiation;
b) phosphor particles (64), which, at least, the areas surrounded by the lighting means (40; 94) and which absorb the primary radiation and emit secondary radiation;
and:
C) the concentration of phosphor particles (64), at least in one direction from the lighting means (40; 94) decreases from the first particle concentration to the second concentration of particles;
g) the highest concentration of phosphor particles has a first region (68), which compared with other areas closest to the lighting means (40; 94);
d) the lowest concentration of phosphor particles included in the second region (70), which compared with other areas as far from the lighting means (40; 94);
characterized in that
(e) the highest concentration of phosphor particles is from 5-fold to 10,000-fold, preferably 10-fold to 100-fold, more preferably from 10 times to 20 times the lowest concentration of phosphor particles.

2. Lighting device, comprising:
a) illuminating means (40; 94), which, when the supply voltage of the bat the t of the primary radiation;
b) reflecting particles (66), first of all particles of barium sulfide, barium sulfite, barium sulfate or titanium dioxide, which, at least, the areas surrounded by the lighting means (40; 94) and which interact with the primary radiation;
in) and the concentration of reflective particles (66) in at least one direction from the lighting means (40; 94) is changed from the first particle concentration to the second concentration of particles;
characterized in that
g) by changing the concentration of reflective particles is reduced.

3. The lighting device according to claim 1 or 2, characterized in that the decrease of the concentration of particles is uniform.

4. The lighting device according to claim 2 or 3, characterized in that:
a) the highest concentration of reflective particles has a first region (68), which compared with other areas closest to the lighting means (40; 94);
b), the lowest concentration of reflective particles has a second region (70), which compared with other areas as far from the lighting means (40; 94).

5. The lighting device according to claim 4, characterized in that the highest concentration of reflective particles is from 5-fold to 10,000-fold, preferably 10-fold to 100-fold, more preferably 10-fold to 20-fold the small end of the ation reflecting particles.

6. The lighting device according to claim 1 or 2, characterized in that
a) the highest concentration of particles is from 500 to 20,000 particles per cm³preferably from 1,000 to 10,000 particles per cm³and more preferably from 5,000 to 10,000 particles per cm³;
b) the lowest concentration of the particles is from 2 to 5000 particles per cm³preferably from 2 to 2500 particles per cm³and more preferably from 2 to 1000 particles per cm³.

7. The lighting device according to claim 1 or 2, characterized in that the particles (64, 66) in their position relative to the lighting means (40; 94) held by the carrier environment (62).

8. The lighting device according to claim 7, characterized in that the carrier medium (62) is a silicone material, primarily elastic silicon, or resin, especially an epoxy resin or polyester resin.

9. The lighting device according to claim 7 or 8, characterized in that the carrier medium (62) with particles (64, 66) is cylindrical, conical, or hemispherical volume or volume, which includes the land in the form of a truncated cone, which moves in a spherical area, or approximately U-shaped volume.

10. The lighting device according to claim 7 or 8, characterized in that the carrier medium (62) with particles (64, 66) is in the camera(60; 76; 80; 84; 90; 150; 165; 175) lighting device (10; 86;118; 130; 136; 138; 162; 174).

11. The lighting device according to claim 10, characterized in that the wall of the chamber, at least sections consists of glass, plastic, primarily epoxy resin or polyester resin.

12. The lighting device according to claim 7 or 8, characterized in that the carrier medium (62) there are several air bubbles (104).

13. The lighting device according to item 12, characterized in that the concentration of air bubbles (104) in the carrier medium (62) has a value of from 500 to 20000 air bubbles on cm³first of all the value from 1000 to 10000 air bubbles on cm³and more preferably a value of from 3000 to 5000 air bubbles on cm³.

14. The lighting device according to item 12, characterized in that the air bubbles (104) have a diameter of from 0.1 to 2 mm, preferably from 0.1 to 1 mm, and more preferably from 0.2 to 0.5 mm.

15. The lighting device according to claim 7 or 8, characterized in that there are several pre-defined carrier medium (62) with particles (64, 66) volumes, which are located at a distance from each other.

16. The lighting device according to item 15, wherein there are two specified carrier medium (62) with particles (64, 66) of the volume, which are located at a distance from each other.

17. The lighting device according to item 16, wherein there are three predefined carrier medium (62) with particles(64, 66) volume, which are located at a distance from each other.

18. The lighting device according to item 15, wherein the amounts provided in several installation areas (142, 144) of the radiating body (140).

19. The lighting device according to item 16, characterized in that the radiating body (140) is cylindrical, and the installation area (142, 144) is made in the form useparallelgc he channels.

20. The lighting device according to one of claims 1 to, 2, 5, 8, 11, 13, 14, 16-19, characterized in that the lighting means (40; 94) include at least one semiconductor structure (40; 94), which, when voltage is applied emits light.

21. The lighting device according to claim 20, characterized in that the at least one light-emitting semiconductor structure (40; 94) when the supply voltage emits blue light.

22. The lighting device according to claim 20, characterized in that the lighting means (40) includes at least one semiconductor structure (40A), red light, at least one semiconductor structure (40b) green light, and at least one semiconductor structure (40C) of the blue light.

23. The lighting device according to claim 20, characterized in that the lighting means (40) includes at least one infrared semiconductor structure (40; 94) and/or, at IU is e, one ultra-violet semiconductor structure (40; 94).

24. The lighting device according to one of claims 1 to, 2, 5, 8, 11, 13, 14, 16-19, 21-23, characterized in that it includes at least three layers (68, A-K, 70), in which there are solid particles (64, 66), the first phosphor particles (64) and/or reflective particles (66), with different concentrations of particles.