Semiconductor photoelectric generator (versions) |
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IPC classes for russian patent Semiconductor photoelectric generator (versions) (RU 2336596):
        
 Transfiguration method of optical emission from distant object and facility for its implementation / 2334305
Method is based on dividing of taking from distant object of luminous flux for two current of equal intensity with further forming from it optical beams of wedge shape, tapering in propagation direction and common edge on its tops, located in zone of optical emission converter. Concentrator system for implementation of method contains two elliptic reflector of sulcate shape for supplying of concentrated emission to the extensive emission converter and located between reflectors two reflective plates of parabolic section. The first focal lines of reflectors and plates overlapped in pairs, and the second focal line of reflectors are located in area of extensive emission converter.
 Solar battery panel / 2332750
Solar battery (SB) panel consists of frame, net to mount and fix photoconverters (PC), PC and substrates designed as modules. Net consists of strings crossed in orthogonal directions and elastically stretched fixed on frame. Modules are mounted over strings and attached to strings in knots of their crossing by fasteners. String pitch dimension provides arrangement of knots of string crossing under PC. Fastener (holder) is designed as integral disk furnished with string cavities on the side adjoining to the back side of modules. Fasteners (holders) are connected (pasted together) with strings on cavity surfaces, and, from the back side of modules, on flat surfaces between cavities.
 Section for manufacturing solar module bezel / 2313852
Proposed section for manufacturing solar module bezel is made of hard material in the form of tubular bar with slot to receive solar module panel and mounting rib joined with rear wall. Tubular bar has rectangular-section area. Mounting rib is built integral with reinforcing rib which is joined with mounting rib throughout its entire length. Rear wall of tubular bar is thickened. Proposed section provides for reliable and convenient holding of large-size modules to be conveyed and/or lifted to operating position and for easy assembly of solar module bezel as the latter has no screwed joints.
 Solar-electric power plant / 2312426
Proposed solar-electric power plant has vertical shaft with rotational drive whose top end is coupled with horizontal shaft that mounts solar battery of photocells, as well as azimuthal turn system. Zenithal-turn automatic control system is made in the form of ball-joint link fixed on frame and on bottom base of photocell solar battery. Ball-joint link can be made in the form of rope. Top base of photocell battery can mount shock absorber such as rubber band whose bottom end is fixed on frame.
 Solar plant with concentrator (alternatives) / 2311701
Proposed solar plant with concentrator has cylindrical mirror reflectors and focal-region radiation detector. Concentrator is built of n (n ≥ 3) axially symmetrical cylindrical annular toroidal facet reflectors forming toroidal surface within space and n-side regular polyhedron on concentrator midsection pane. Cross-sectional area radius of cylindrical reflector equals distance between cross-sectional area center and symmetry axis and is four-times smaller than diameter of circle inscribed in polyhedron. Detector is made in the form of polyhedron with number of sides m ≥ 3 and is installed axially symmetrically in concentrator midsection plane, diameter of its circle circumscribed about detector being equal to radius of circle circumscribed about concentrator polyhedron. Four more alternatives of solar plant distinguished by shape of concentrator and radiation detector are also given in invention specification.
 Cascade solar cell / 2308122
Proposed cascade solar cell has substrate, solar-cell p-n junction multistrate disposed on top side of substrate, bottom and top contact electrodes disposed on bottom side of substrate and on top part of p-n junction multistrate, respectively. Multistrate jointly with substrate is divided into solar cell cascades. Bottom cascade that functions as bottom p-n junction is built integral with substrate that functions as base and has layer of reverse polarity of conductivity relative to that of substrate and functions as emitter; bottom solar cell cascade is made of silicon; composite buffer incorporated in p-n junction multistrate is optically translucent in spectral silicon photoelectric conversion region and matches constant silicon lattices with material of intermediate cascade that functions as intermediate p-n junction or that of top cascade that functions as top p-n junction. Substrate that functions as base is made of p-type silicon.
 Shaped photoelectric roof panel / 2303832
Proposed shaped photoelectric roof panel has bearing structure and solar battery unit. The latter accommodates separate solar batteries, at least two of them being connected in series and at least one solar battery is series-connected to non-adjacent solar battery. Four other design alternates of flexible solar-battery panel are proposed; each panel has solar battery unit with separate solar batteries, at least two batteries being connected in series and at least one battery is series-connected to non-adjacent solar battery. It is just proposed mechanical design of roof panel that provides for uniform illumination of all battery parts.
 Solar power station / 2298860
Proposed solar power station has vertical shaft with its drive whose top end mounts horizontal shaft provided with symmetrical eccentric dogs on its ends contacting sinusoidal slot of rigidly fixed horizontal ring. Rigidly fixed on horizontal shaft is solar photocell battery with automatic-control system for its rotation in azimuth. When vertical shaft is rotating in azimuth, horizontal-shaft dogs engage horizontal-ring sinusoidal slot and turn through 45 deg. while moving through slot in morning, noon, and evening direction, respectively, thereby making it possible for photocell battery to afford zenithal tracking of sun.
 Photoelectric module mechanical design and its manufacturing process / 2297693
Proposed photoelectric module manufacturing process includes manufacture of module case in the form of flat narrow-wall vessel with removable cover on top end. Commutated photoelectric converters are inserted in case and the latter is closed with cover. The latter mounts conducting terminals and current-collector fastening unit with commutated photoelectric converters. Expected service life of module is 100 years and more.
 Solar battery panel / 2297077
Proposed solar battery panel has flat frame, net sheet elastically tightened thereon and made of orthogonally intersecting strings with film substrate attached by means of fasteners at their intersection points; substrate mounts photoelectric converters secured thereon by means of adhesive; each fastener is made in the form of coaxially aligned pairs of washers. The latter have longitudinal projections and are provided with two holes for passing length of flexible material through them to enclose both washers and strings at their intersection points and to secure them in position. One of washers is mounted on film substrate face and other one, on its rear end. Longitudinal projection of washer rests on string. Such reliable fastening of substrate to strings through substrate-mounted washers enhances panel resistance to mechanical and thermomechanical thrusts.
 Method of obtaining nanotubular structures of oxides of vanadium or chrome subgroup (versions) / 2336230
Method of obtaining nanotubular structures includes mixing of oxygen-containing organic compound - oxalic acid hydrate with vanadium oxide gel or oxygen-containing compound of respective metal. As oxygen-containing compound of respective metal, peroxide molybdenum or tungsten oxides are used.
Heterostructure for photocathode / 2335031
Invention may be used in structures of photocathode in optoelectronic systems, secondary emission photocells, detector modules of ionising radiations, systems of images recognition, etc. According to invention, in heterostructure for photocathode that contains diamond layer of p-type conductivity with nanodimensional topological irregularities on its surface, as nanodimensional topological irregularities auto-emissive diamond points or diamond crystalline nanoparticles are used that are regularly positioned, surface of layer, except for the said irregularities, being covered with conducting amorphous carbon or nanocarbide film. Heterostructure may be installed on wafer, in which cavity is provided.
 Multipurpose biocompatible nanostructue membranulas for medicine / 2333009
The invention refers to biocompatible wearproof nanostructure thin-film materials on the basis of titan carbonitride, used as membranulas for manufacturing imlants, working under load. Total concentration of the basic and additional elements in a covering has the following ratio:
Nanocomposite material / 2332352
Invention concerns nanotechnologies and is designed for production of nanocomposite materials with efficiently adjustable optic properties, which can be applied in non-linear optics, IT, optic memory device development etc. Nanocomposite material contains nanoparticles, intermediary link molecules (particles changing their spatial configuration under the influence of external light source), and linked molecules (particles exhibiting some optic properties in vicinity of nanoparticles), all three components linked in sequence in a spatial cluster structure. Intermediary link molecules, changing their spatial configuration under the influence of external light source, can include additives - functional substitutes increasing their linking properties.
 Nanostructural lockout device of micromanipulator / 2331505
Lockout device consists of base, clamping device and lockout device working surface, produced from nanostructural material. In the base piezoelectric elements are installed in mesh-like order.
Method of sheet organic glass production for neutral light filters / 2330213
Invention is related to the field of sheet organic glass production by means of polymerisation in mass of ethers of (meth)acrylic acid, which is used for production of neutral light filters that are used in personal protection gear (glazing of protective helmets of pilots) and in glazing of sport airplanes. Method is suggested to produce sheet organic glass for neutral light filters by means of (co)polymerisation in mass of methyl methacrylate or its mixtures with methacrylic acid or its ethers in the presence of UV-absorber, initiator of radical polymerisation and light-absorbing additive - product of methane pyrolysis, which includes prepolymerisation of monomer, realisation of ultrasonic effect at prepolymer with light-absorbing additive and depolymerisation of prepared mixture in plane-parallel form until full conversion, at that as light-absorbing additive functionalised carbon nano-tubes are used with implanted COOH groups, and prepolymerisation is performed in the presence of light-absorbing additive, and prior to depolymerisation to prepared prepolymer additionally monomer is added in mass ratio 1:(0.5-1.5) accordingly.
Anti-friction polymer composition / 2329279
Invention pertains to polymer composite materials for anti-frictional purposes, which can be used for making component parts of friction assemblies of machines and equipment. Description is given of the polymer composition, containing polytetrafluoroethylene and aluminium oxide with particle size of 9-11 nm as filler material, with the following ratio of components: nano-size aluminium oxide - 0.1-2.0 mass %, polytetrafluoroethylene constitutes the remaining percentage.
 Sorbent for cleaning water off heavy metal ions / 2328341
Sorbent for cleaning water off the heavy metal ions consists of the grinded zeolite, nanophase iron hydroxide and nanophase aluminum metahydroxide at the following ratio in mass percent: 12-18 of nanophase iron hydroxide; 5-13 of nanophase aluminum metahydroxide and zeolite - the remaining.
 Thin-film material that contains functional components and method of preparation of thin-film material that contains functional components / 2326898
Invention may be used for preparation of new thin-film composite polymer materials and coatings, which are used in sensor, analytical, diagnostic and other devices, systems of atmosphere and hydrosphere condition forecasting and others. Thin-film material that contains functional components and molecules of polyelectrolites, is formed on the surface of base and is made in the form of layer or layers of poly-ionic complexes of functional components, which are connected to layer or layers of polyelectrolites, at that the quantity of functional components in poly-ionic complex more than 1.Functional components are colloidal particles. Method of preparation of thin-film material consists in performance of procedure of alternating successive layer adsorption of components from water phase on the base. At that beforehand in water phase poly-ionic complexes are formed, which include the molecules of polycations or polycation, polyanions or polyanion and functional components in the quantity of more than 1, creating stochiometric surplus of cation or anion groups of polyelectrolites and functional components and providing difference from zero of summary electrostatic charge of cation and anion groups of such complexes.
 Method for producing palladium containing catalyst of hydrogenation / 2326731
Invention can be used in controlling the rate of the autocatalytic reactions of hydrogenation. The method of producing the palladium containing hydrogenation catalyst is described, including the reduction of bivalent palladium from the initial compound and precipitation of the reduced palladium at the carbon nanomaterial, and, as the initial compound, the (1-5)×10-5 mol/L water solution of tetraaqua palladium (II) perchlorate is used, and 0.1-0.5 mass percent of the reduced palladium is plated on the carbon nanomaterial.
 Magnetic materials / 2244971
Memory element has nanomagnetic materials whose axial symmetry is chosen to obtain high residual magnetic induction and respective coercive force. This enlarges body of information stored on information media.
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FIELD: physics, phototechnics. SUBSTANCE: invention concerns electronic technics, particularly devices converting electromagnetic emission energy into electric energy, and technologies of their manufacturing, particularly semiconductor photoelectric generators. Semiconductor photoelectric generator takes form of a matrix of commuted microphotoconverters with one or two linear dimensions comparable to diffusion length of secondary current carriers in base area; p-n transition planes are perpendicular to working surface of generator; microphotoconverter surface free of n-p transitions carries a 10-30 nm thick insulating film with 10-40 nm metal clusters positioned on it at 60-120 nm distance from each other; and dielectric layer of passivating antireflection coating is laid over nanoclusters. Two more embodiments of photoelectric generator are claimed. EFFECT: improved efficiency of photoelectric generator and electromagnetic radiation conversion for single emission. 3 cl, 4 dwg
The invention relates to electronic devices, namely, devices that convert the energy of electromagnetic radiation in electric and manufacturing technologies, in particular to a semiconductor photovoltaic generator. Known photovoltaic generator matrix type (patent RF №2265915, 2005, IPC 01L 31/18), in which the semiconductor substrate are epitaxial layers of n and p-type, and the locking effect abratoceon transitions resolved by pulsed breakdown. The disadvantage of this Converter is high enough efficiency not exceeding 8.6% in a single light intensity. Also known Converter of solar energy into electrical energy (RF patent No. 2217845, 2003, the IPC 01L 31/04) - based photosensitive layer on the metal plate containing the metal nanoparticles in n-layer semiconductor polymer and semiconductor nanocrystals p-type. The disadvantage of this Converter is the instability of the state, ensuring the increase of the dielectric permittivity of the environment of the photosensitive layer, increased losses in the n-region and the effect of photon degradation. As a prototype adopted the design of the PV generator (A.S. No. 288163 of the USSR, 1967, IPC 01L 31/042), made in the form of a matrix from commute avannah of micropropagules, have one or two linear size commensurate with the diffusion length of minority carriers in the base region, and the plane of p-n junctions perpendicular to the working surface of the generator. The disadvantage of this Converter is not sufficiently high conversion efficiency. The task of the invention is to increase the efficiency of the photovoltaic generator, the conversion efficiencies of electromagnetic radiation. The above result is achieved in that in the semiconductor photovoltaic generator, made in the form of a matrix from commutated of micropropagules, with one or two linear size commensurate with the diffusion length of minority carriers in the base region, and the plane of p-n junctions perpendicular to the working surface of the generator, on the surface of micropropagules free of n-p junctions, placed insulating film thickness of 10-30 nm, where the nanoclusters of metals 10-40 nm with spacing between nanoclusters 60-120 nm, and over the nanoclusters is a layer pestiviruses antireflection coating of dielectric material. Also increase the efficiency and effectiveness of the conversion is achieved in that in the semiconductor photovoltaic generator, made in the form of mA is the matrix of the commutated of micropropagules, have one or two linear size commensurate with the diffusion length of minority carriers in the base region, and the plane of the n-p junctions perpendicular to the working surface of the generator, on the surface of micropropagules-free p-n junctions, placed an insulating film containing nanoclusters of metals 10-40 nm, and the film is a layer pestiviruses antireflection coating of dielectric material. Also increase the efficiency and effectiveness of the conversion is achieved in that in the semiconductor photovoltaic generator, made in the form of a matrix from commutated of micropropagules, with one or two linear size commensurate with the diffusion length of minority carriers in the base region, and the plane of the n-p junctions perpendicular to the working surface of the generator, characterized in that on the surface of micropropagules-free p-n junctions, placed an insulating film containing nanoclusters of metals 10-40 nm, with an insulating film performs the function pestiviruses antireflection coating. The invention is illustrated figure 1-4. Figure 1 shows the main elements of the structure of the semiconductor photovoltaic generator nanoclusters located on isolera the overall film, with a base region of n-type. Figure 2 shows the main elements of the structure of the semiconductor photovoltaic generator with vertical epitaxial p-n - transitions with nanoclusters located on an insulating film, for the case of a substrate of n-type. Figure 3 shows the main elements of the structure of the semiconductor photovoltaic generator are placed in the insulating film nanoclusters. Figure 4 shows the main elements of the structure of the semiconductor photovoltaic generator nanoclusters inside the insulating film, which acts as pestiviruses antireflection coating. Figure 1 is a photovoltaic generator consists of micropropagules 1 containing n-p - transitions 2, the base region 4 of n-type and doped layer 5, the working surface 3, the external metal contacts 6, the inner metal contacts 7, the insulating film 8, nanoclusters 9, pestiviruses antireflection coating of dielectric material 10, is free from n-p junctions of the surface 11. In this case n-R - 2 transitions are perpendicular to the working surface 3. One or two linear size micropropagative 1 commensurate with the diffusion length of minority carriers in the base region 4. The insulating film 8 is located at the free n-p transitions of the surface 11, taldenaplex 8 10-30 nm. On the insulating film 8 is placed nanoclusters 9, the size of 10-40 nm, and the distance between the nanoclusters 9 is 60-120 nm. Over the nanoclusters 9 is a layer pestiviruses antireflection coating of dielectric material 10. Figure 2 on a substrate of n-type 12 posted by epitaxial layers of n-type 5 and p-type 4 punched bretomania p-n junction 7, and the inner metal contacts are missing. Figure 3 nanoclusters 9 is placed inside the insulating film 8, and pestiviruses the antireflection coating 10 is located on the insulating film 8. Figure 4 nanoclusters 9 is placed inside the insulating film 8, which performs the function pestiviruses antireflection coating. The device operates as follows. Falling on the working surface 3 of the electromagnetic radiation through pestiviruses the antireflection coating 10 and the insulating film 8 is fed to the surface 11 micropropagative 1, available from n-p transitions 2, for example, perpendicular to the n-p transition 2. Is the absorption of photons, accompanied by the formation of electron-hole pairs and the emergence of excess charge carriers. Electron-hole pairs are separated field that causes the external circuit photocurrent directed to the base region 4. At the same time the radiation arrives at the nanoclusters 9. The frequency of the plasma p is sonance nanoclusters 9 corresponds to the frequency of the incident electromagnetic radiation that allows you to pereizuchit incident radiation through an insulating film 8, and thus creates an environment in which propagates an electromagnetic wave. There is a sharp increase in the number of minority charge carriers and increase the generation function. In the device according to claim 2 through pestiviruses the antireflection coating of dielectric material 10 radiation arrives at the nanoclusters 9, located in the insulating film 8. In the device according to claim 3 electromagnetic radiation is delivered directly to the insulating film 8, which performs the function pestiviruses antireflection coating, and located it nanoclusters 9. The combination of optical, mechanical and diffusion characteristics of the coating and the characteristics of the nanoclusters allows in some cases to use an insulating, dielectric film containing nanoclusters and as an antireflection coating (without additional pestiviruses antireflection coating of dielectric material over the film). As for the matrix PV generators are characterized by the ability to generate charge carriers in the entire volume, additional sources of generation of carriers in the form of nanoclusters allows to reach in a single radiation values efficiency attainable in other structures at high concentrations of radiation. Thus, the growth generated in the base region, increased the e efficiency of conversion of electromagnetic radiation increases the efficiency of the proposed design of the photovoltaic generator in real operating conditions in comparison with the known structures. An example of executing the semiconductor photoelectrically generator. EXAMPLE 1. Photovoltaic generator is a matrix of column micropropagative with a vertical n-p-n...-p - structure. Micropropagated represent a silicon wafer mark KDB is 0.5(0.1) with the diffusion transitions and continuous ohmic contacts of India with both n - and p-sides of the plates. On the surface, free from n-p junctions, placed an insulating film of silicon dioxide of a thickness of 10-20 nm, which are the nanoclusters of metal, for example gold, 10-40 nm, while the distance between the nanoclusters 60-120 nm. Over the nanoclusters is a layer pestiviruses antireflection coating of dielectric type silicon nitride of SixNy. EXAMPLE 2. Photovoltaic generator is a multi-layer epitaxial n-p-n...-R - structure on a semiconductor substrate of silicon of n-type brand KDB is 0.5(0.1) with punched aboutnomoney p-n - transitions. On the surface, free from n-p junctions, placed an insulating film of silicon dioxide of a thickness of 10-20 nm, which are the nanoclusters of metal, for example silver atoms, the size of 10-40 nm, while the distance between the nanoclusters 60-120 nm. Over the nanoclusters is a layer pestiviruses antireflection coating of the of Electrica type silicon nitride of Si xNy. It should be noted that these embodiments does not limit the claims of the applicant, which can be defined by the attached claims, and many modifications and improvements may be made within the framework of the present invention. For example, you can create in microtiterplates additional p-n - or isotopic transitions, as well as creating oblique matrix. 1. Semiconductor photovoltaic generator, made in the form of a matrix from commutated of micropropagules, with one or two linear size commensurate with the diffusion length of minority carriers in the base region, and the plane of p-n junctions perpendicular to the working surface of the generator, characterized in that on the surface of micropropagules free of n-p junctions are placed insulating film thickness of 10-30 nm, where the nanoclusters of metals 10-40 nm with spacing between nanoclusters 60-120 nm, and over the nanoclusters is a layer pestiviruses antireflection coating of dielectric material. 2. Semiconductor photovoltaic generator, made in the form of a matrix from commutated of micropropagules, with one or two linear size commensurate with the diffusion length of minority wear is her current in the base region, and the plane of the n-p junctions perpendicular to the working surface of the generator, characterized in that on the surface of micropropagules-free p-n junctions placed an insulating film containing nanoclusters of metals 10-40 nm, and the film is a layer pestiviruses antireflection coating of dielectric material. 3. Semiconductor photovoltaic generator, made in the form of a matrix from commutated of micropropagules, with one or two linear size commensurate with the diffusion length of minority carriers in the base region, and the plane of the n-p junctions perpendicular to the working surface of the generator, characterized in that on the surface of micropropagules-free p-n junctions placed an insulating film containing nanoclusters of metals 10-40 nm, with an insulating film performs the function pestiviruses antireflection coating.
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