The invention relates to semiconductor devices, particularly to devices for generating electrical energy by converting the energy of light radiation into electrical energy, and can be used to create devices operating in the space environment.

Known cascade solar cell (Tatsuya Takamoto, Minoru Kaneiwa, Mitsuru Imaizumi, Masafumi Yamaguchi "InGaP/GaAs-based Multijunction Solar Cell" Prog. Photovolt.: Res. Appl., 2005, 13: p.p.495-511)containing the substrate, the multi-p-n-transition structure of the solar cell located on the upper side of the substrate, the lower and upper contact electrodes located respectively on the lower side of the substrate and on the upper part of the multi-p-n-transition structure of the solar cell, while multi-p-n-transition structure together with the substrate divided by the cascade solar cell, with the upper cascade, which is the upper p-n junction, is made comprising: a layer reflecting the minority charge carriers, p-conduction type AlInP, which are sequentially a layer of p-conductivity type GaInP, which is the base layer of n-conductivity type GaInP, which is the emitter, and a layer of n-type conductivity AlInP, which is the wide-gap window; middle cascade, which is the average p-n junction, is made comprising: a layer reflecting the minority charge carriers, p-conductivity type GaInP, where R is sporogony sequentially a layer of p-type conductivity GaInAs, which is the base layer of n-type conductivity GaInAs, which is the emitter, and a layer of n-conductivity type GaInP, which is the wide-gap window; the lower cascade, which is the lower p-n-junction, made in the composition of the substrate of p-type conductivity of Ge and n-Ge layer, performing the functions respectively of the base and the emitter; between the upper and middle cascades performed broad-band tunneling diode with a p-AlGaAs layer and an n-InGaP layer, between the middle and lower cascades sequentially performed on n-Ge layer, which is the emitter of the lower p-n junction, the GaInP layer, a layer of n-type conductivity GaInAs, forming a buffer and tunnel diodes based on GaAs, and between the upper contact electrode and the layer of n-type conductivity AlInP, which is the wide-gap window upper p-n junction made podkonicky layer GaAs n-type conductivity.

The disadvantages of this technical solution are high enough efficiency solar cell, clunky design, combined with low strength and high cost of manufactured products. These drawbacks are caused by design features of the solar element, namely the implementation of the first cascade-based Ge. The need for accurate matching of the crystal lattices of the materials used for layers that perform an active function, determines the use of Germany in cascading the solar elements, however, when used in combination with other traditionally used materials the width of the gap Ge is not optimal for achieving high efficiency solar energy conversion. Heaviness in combination with low strength of known designs cascade solar cells due to the fragility of Germany and its high specific gravity.

The closest technical solution is a cascade solar cell (..Fetzer, R.R.King, P.C.Colter, ..Edmondson, D..Law, A.P.Stavrides, H.Yoon, J..Ermer, .J.Romero, N..Karam "High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE", Journal of Crystal Growth 261 (2004), p.p.341-348)containing the substrate, the multi-p-n-transition structure of the solar cell located on the upper side of the substrate, the lower and upper contact electrodes located respectively on the lower side of the substrate and on the upper part of the multi-p-n-transition structure of the solar cell, while multi-p-n-transition structure together with the substrate divided by the cascade solar cell, with the upper cascade, which is the upper p-n junction, is made comprising: a layer reflecting the minority charge carriers, p-conductivity type AlGaInP, which are sequentially a layer of p-conductivity type GaInP, which is the base layer of n-conductivity type GaInP, which is the emitter, and a layer of n-type conductivity AlInP, is the present wide-gap window; the average cascade, which is the average p-n junction, is made comprising: a layer reflecting the minority charge carriers, p-conductivity type GaInP, which are sequentially a layer of p-type conductivity GaInAs, which is the base layer of n-type conductivity GaInAs, which is the emitter, and a layer of n-conductivity type GaInP, which is the wide-gap window; the lower cascade, which is the lower p-n-junction, made in the composition of the substrate of p-type conductivity of Ge and n⁺layer Ge, respectively performing the functions of the base and the emitter; between the upper and middle cascades performed broad-band tunneling diode with n⁺⁺layer positioned on the layer of n-conductivity type GaInP, which is the wide-gap window average p-n junction between the middle and upper cascades consistently made of GaInAs nucleating layer, a tunnel diode with the n⁺⁺layer located on the nucleating layer and the combined buffer comprising buffer layers, providing step-by-step achievement of the output in the desired content In and between the upper contact electrode and the layer of n-type conductivity AlInP, which is the wide-gap window upper p-n junction made podkonicky layer GaInAs n-type conductivity.

The disadvantages of this technical solution are high enough efficiency solar cell, heaviness design in combination is of low strength, as well as the high cost of manufactured products. These drawbacks are caused by design features of the solar element, namely the implementation of the first cascade-based Ge. The need for accurate matching of the crystal lattices of the materials used for layers that perform an active function, determines the use of Germany in cascade solar cells, however, when used in combination with other traditionally used materials the width of the gap Ge is not optimal for achieving high efficiency conversion of solar energy into electrical energy. Heaviness in combination with low strength of known designs cascade solar cells due to the fragility of Germany and its high specific gravity.

The technical result of the invention is:

- increasing the efficiency of the solar cell;

- relief construction and increase its strength.

An additional positive effect of the invention is to reduce the cost of the finished product.

The technical result is achieved by the cascade solar cell, containing a substrate, the multi-p-n-transition structure of the solar cell located on the upper side of the substrate, the lower and upper contact electrodes, the location the data respectively on the lower side of the substrate and on the upper part of the multi-p-n-transition structure of the solar cell, this multi-p-n-transition structure together with the substrate divided by the cascade solar cell, and the lower cascade, which is the lower p-n-junction, made in the composition of the substrate, performing the function of a base, and a layer of opposite conductivity type relative to the substrate, performing a function of the emitter, as a material for the lower cascade solar cell used silicon, and the combined buffer in the composition of the multi-p-n-transition structure is made of optically transparent in the spectral region of photorearrangement silicon and the matching lattice constant of silicon and the material from which made the average cascade, which is the average p-n junction, or the top of the cascade, which is the upper p-n-junction.

In a cascade solar cell substrate, performing the function of a base made of silicon p-type conductivity.

In a cascade solar cell multi-p-n-transition structure of a solar cell, containing a combined transparent buffer is performed as part of: n⁺-Si layer, which is the emitter of the lower p-n junction, located on the top side of the substrate, which is combined transparent buffer, tunnel diode R⁺⁺GaAs-n⁺⁺GaAs or tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP located on a combined Pro is this at all buffer; the top of the cascade, representing the upper p-n junction consisting of the p-AlInP layer, reflecting the minority charge carriers located on the tunnel diode, the p-InGaP layer, which is the base located on the p-AlInP layer, n⁺-InGaP layer, which is the emitter located on the p-InGaP layer, n⁺-AlInP layer, which is the wide-gap window, situated on the n⁺the InGaP layer and the n-GaAs layer, which is podkonicky located on the n⁺-AlInP layer.

In a cascade solar cell multi-p-n-transition structure of a solar cell, containing a combined transparent buffer is performed as part of: n⁺-Si layer, which is the emitter of the lower p-n junction, located on the top side of the substrate, which is combined transparent buffer, tunnel diode R⁺⁺GaAs-n⁺⁺GaAs, located on the combined transparent buffer; medium cascade representing the average p-n junction consisting of the p-InGaP layer, reflecting the minority charge carriers located on tunnel diode R⁺⁺GaAs-n⁺⁺GaAs p-GaAs layer, which is the base located on the p-InGaP layer, n⁺-GaAs layer, which is the emitter located on the p-GaAs layer, n⁺-InGaP layer, which is the wide-gap window, situated on the n⁺-layer GaAs tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP, location is spent on the n-InGaP layer; the top of the cascade, which represents an upper p-n junction consisting of the p-AlInP layer, reflecting the minority charge carriers located on tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP, a p-InGaP layer, which is the base located on the p-AlInP layer, n⁺-InGaP layer, which is the emitter located on the p-InGaP layer, n⁺-AlInP layer, which is the wide-gap window, situated on the n⁺the InGaP layer and the n-GaAs layer, which is podkonicky located on the n-AlInP layer.

In a cascade solar cell combined transparent buffer is executed in structure: layer Ge_{of 0.15}Si_{of 0.85}providing accurate coordination lattices of Si and GaP located on the n⁺-Si layer, a GaP layer located on the layer Ge_{of 0.15}Si_{of 0.85}and a layer of variable composition thickness In_xGa_1-xP, provide "exit" on the lattice constant of the material of the middle or upper cascade, and located on the GaP layer, and with the increase of x from the boundary data layers from 0 to 0.5 continuously or discretely, in General, the combined buffer is transparent to light, noise upper cascades spectral region of photorearrangement Si.

In a cascade solar cell contact electrodes made of Ag or Au.

The invention is illustrated in the following description and the accompanying figures of the mi. Figure 1 shows the solutions to the problem of creating high-performance solar cells with conversion of the materials used, indicating to them the values of the band gap, lattice constant and absorbed wavelengths. Figure 2 schematically presents a cascade solar cell, where 1 - Si substrate, 2 - n⁺-Si layer, 3 - n⁺-layer Ge_{of 0.15}Si_{of 0.85}4 to the GaP layer, 5 - layer In_xGa_1-xP, 6 - tunnel diode R⁺⁺GaAs-n⁺⁺GaAs, 7 - p-InGaP layer, 8 - p-GaAs layer, 9 - n⁺-a layer of GaAs, 10 - n-InGaP layer, 11 - tunneling diode n⁺⁺AlGaAs-p⁺⁺InGaP, 12 - p-AlInP layer 13, a p - InGaP layer, 14 - n⁺-InGaP layer, 15 - n⁺-AlInP layer, 16 - n-GaAs layer, 17 - top contact electrode 18 and the lower contact electrode.

The development of highly efficient cascade solar cells based on semiconductor compounds And₃In₅in combination with the use of cheap, durable, and lightweight substrates of Si is at this stage of development of photovoltaics one of the highest priorities. The main problem on the way of creating such high-performance devices is large, about 4%, the variance of permanent gratings and significant, up to 50%, mismatch of coefficients of thermal expansion of silicon and are most suitable, technologically worked for cascade solar cell materials, such as GaAs, AlGaAs, InGaP, possessing the x (in combination) values restricted areas Eg, close to optimal for efficient solar energy conversion. Given the misalignment of permanent gratings causes high 10⁷cm^-2and higher density of dislocations in the layers of these materials. These circumstances prevent from getting on silicon high-quality, high lifetime and mobility of minority carriers, layers of semiconductor compounds And₃In₅that is a necessary condition for the effective functioning of the solar cell.

One of the ways to solve this problem is the creation of a sufficiently thick silicon of the order of 10 µm SiGe buffer layer with "exit" on the lattice constant of Ge, which is very close to the lattice constant of the corresponding compounds And₃In₅(and solid solutions between them) (Figure 1). This way, in General, allows you to grow a single crystal silicon substrate of high-quality layers of connections And₃In₅characterized by large values of the diffusion length of minority charge carriers and, therefore, the efficiency of the solar cell.

However, it should be noted that this approach has one, but a fundamental disadvantage in that a solar cell buffer layer of SiGe is opaque in the spectral about the Asti effective photorearrangement in silicon. A silicon substrate, which in itself could effectively serve as a constructive element that performs an active function in vodoproprovodnye, in this case plays the role only of a bearing element, a passive inert substrate.

Due to this factor, the efficiency of the solar cell, is to implement the use of cascade solar cell substrate Si as the active photobrowser structural element. To achieve this requires the presence of the buffer layer is transparent in the spectral region of photorearrangement silicon, that is, with a bandgap larger edge Eg of the previous cascade.

In the present invention as a buffer layer is transparent in the spectral region of photorearrangement silicon used phosphorus-containing solid solutions of compounds And₃In₅(GaInP, GaAsP, AlInP), allowing to obtain the combined buffer layers GaP InGaP, GaP-AlInP, GaP-GaPAs (Figure 1). A member of the combined buffer (Figure 2), which is made optically transparent in the area of photorearrangement silicon and the matching lattice constant of silicon and the material, based on the previous cascade, also included the GeSi layer, helping to coordinate lattice of silicon and gallium phosphide. The width of the forbidden zone kombinirov the aqueous buffer layer GaP-InGaP is, smoothly changing from 1.88 to 2.26 eV.

The lattice constant GaP is close to the lattice constant of Si (differences are 0,13%), and the combined transparent buffer (see Figure 2), including, for example, layers of GaP-In_xGa_1-xP, where x in the second layer increases from the boundary data layers from 0 to 0.5, allows you to "exit" on the lattice constant of GaAs or AlGaAs (see Figure 1). This, in turn, gives the opportunity to grow technologically exhaust for solar cell materials And₃In₅layers with low dislocation density, which causes an increase in the diffusion length of minority charge carriers and, therefore, the efficiency of solar cells. The combination is compatible in relation to the lattice constant of these materials allows us to implement some of the most effective architectures two - and triple junction solar cells at the present time. So, for two AlGaAs/Si or InGaP/Si bandgap, respectively, 1,7 eV/1.1 eV 1.8 eV/1.1 eV the expected efficiency is up to 44%; for a triple junction InGaP/GaAs/Si bandgap of 1.8 eV/1.4 eV/ 1.1 eV the expected efficiency is up to 47%. For comparison, we note that we actually received to date of solar cells on expensive and heavy substrates Ge or GaAs efficiency is: for two-stage InGaP/GaAs up to 38%; three is oscadnica InGaP/GaAs/Ge to 44%.

The proposed cascade solar cell includes a substrate, multi-p-n-transition structure of the solar cell located on the upper side of the substrate, the lower and upper contact electrodes located respectively on the lower side of the substrate and on the upper part of the multi-p-n-transition structure of the solar cell. Moreover, the substrate together with the multi-p-n-transition structure of the solar cell is divided into a cascade solar cell. The proposed cascade solar cell can be implemented as in two-stage and three-stage execution. In the three-stage implementation of a solar cell is presented in figure 2. It contains the Si substrate 1, n⁺-Si layer 2, n⁺-layer Ge_{of 0.15}Si_{of 0.85}3, the GaP layer 4, a layer of In_xGa_1-xP 5, a tunnel diode R⁺⁺GaAs-n⁺⁺GaAs 6, a p-InGaP layer 7, a p-GaAs layer 8, n⁺-GaAs layer 9, the n-InGaP layer 10, a tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP 11, p-AlInP layer 12, a p-InGaP layer 13, n⁺-InGaP layer 14, n⁺-AlInP layer 15, the n-GaAs layer 16, the upper contact electrode 17, the lower contact electrode 18.

The silicon substrate 1 with a thickness of 70÷200 μm has p-type conductivity with a concentration of free charge carriers at the level of 10¹⁶cm^-3.

On the upper side of the silicon substrate 1 is made of multi-p-n-transition structure of the solar cell. For triple junction solar is the first element (2) it is made, for example, in the n⁺-Si layer 2, n⁺-layer Ge_{of 0.15}Si_{of 0.85}3, the GaP layer 4, layer In_xGa_1-xP 5, tunnel diode R⁺⁺GaAs-n⁺⁺GaAs 6, the p-InGaP layer 7, the p-GaAs layer 8, n⁺-GaAs layer 9, the n-InGaP layer 10, the tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP 11, the p-AlInP layer 12, the p-InGaP layer 13, n⁺-InGaP layer 14, n⁺-AlInP layer 15. For two-stage solar cell multi-p-n-transition structure made, for example, in the n⁺-Si layer 2, n⁺-layer Ge_{of 0.15}Si_{of 0.85}3, the GaP layer 4, layer In_xGa_1-xP 5, tunnel diode R⁺⁺GaAs-n⁺⁺GaAs 6 or tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP 11, the p-AlInP layer or 12, the p-InGaP layer 13, n⁺-InGaP layer 14, n⁺-AlInP layer 15 (see Figure 2).

The silicon substrate 1 together with on her n⁺the silicon layer 2 with a thickness of about 0.1 μm to form the lower cascade solar cell, which is the lower p-n-junction. While the silicon substrate 1 performs the function of a base, and n⁺the silicon layer 2 function of the emitter.

The average cascade solar cell, which is the average p-n junction, formed by the p-InGaP layer 7, the p-GaAs layer 8, n⁺-GaAs layer 9 and the n-InGaP layer 10. Thus, the p-InGaP layer 7 functions as the reflection of minority charge carriers located in the p-InGaP layer 7, the p-GaAs layer 8 is a base located on the p-GaAs layer 8 n⁺-GaAs layer 9 is the emitter and located on n +the GaAs layer 9 of n-InGaP layer 10 is a wide-gap window.

It should be noted that the proposed cascade solar cell allows for the execution of the second cascade options known technical solutions, in particular, as in the above analogues.

Between the lower and middle stages of a solar cell comprising multi-p-n-transition structure was combined transparent buffer and tunnel diode (Figure 2).

In a cascade solar cell combined transparent buffer consists of: first, from mesomorpha or relacionado layer Ge_{of 0.15}Si_{of 0.85}which provides precise coordination lattices underlying Si and the upper GaP layer, and a layer of Ge_{of 0.15}Si_{of 0.85}skips at least 95% of the photons that have passed through the previous stages, because its thickness is not more than 0.5 μm, and the coefficient of optical absorption 10³cm^-1; secondly, from the band GaP layer, a transparent, because the width of its bandgap of 2.26 eV; thirdly, from a layer with varying composition of In_xGa_1-xR, and as the distance from the boundary between this layer and the layer GaP x increases from 0 to 0.5 smoothly or step that provides access to the lattice constant of the material of the middle and upper cascades. Layer In_xGa_1-xR is also transparent in the spectral diazonaphthalene light silicon, since the width of the forbidden zone of not less than 1.89 eV.

The combined buffer made of optically transparent in the spectral region of photorearrangement silicon, on the one hand, passing photons, ensures that the silicon substrate of the active functions and, on the other hand, agree lattice constant of silicon and the material of the upper cascades, in particular GaAs, on the basis of which made the average cascade, which is the average p-n junction. The buffer contains n^+-layer Ge_{of 0.15}Si_{of 0.85}3, the GaP layer 4, a layer of In_xGa_1-xP 5, while the layers are executed in sequence on the n⁺the Si layer 2. The thickness of the n⁺-layer Ge_{of 0.15}Si_{of 0.85}3 not more than 0.5 μm. The thickness of the next layer of GaP 4 is approximately 0.1 μm. It is the initial layer of variable composition In_xGa_1-xP 5 a thickness of 1 to 1.5 μm, intended for "exit" on the lattice constant of the material from which made the middle or upper cascade, in particular, in a three-stage execution on GaAs, which made the average cascade. Moreover, the concentration In the layer increases from the boundary between this and the underlying layer. This boundary corresponding value of x is 0 and it reaches a value of 0.5 at the interface of the layer and the next overlying layer multi-p-n-transition structure.

When the expansion of the solar cell on the basis of achieving a minimum density of dislocations select the particular option of changing the value of x as a function of distance from the boundary. It can be continuous or discrete (stepwise) character, depending on the technology used.

All layers combined transparent buffer have n-type conductivity and are signalground with the concentration of free charge carriers at the level of 10¹⁸÷10¹⁹cm^-3.

Tunnel diode R⁺⁺GaAs-n⁺⁺GaAs 6 or tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP 11 is located on the layer In_xGa_1-xP 5 combined transparent buffer. Performance and characteristics the same as, for example, known in the above technical solutions.

If desired three-stage embodiment of the solar cell, the multi-p-n-transition patterns provide additional tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP 11 and the average cascade, which is the average p-n-junction (Figure 2).

Additional tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP 11 is made to last, the top layer of the middle cascade solar cell, namely the n-InGaP layer 10, which is a wide bandgap window. Performance and characteristics this tunnel diode can be the same as, for example, known in the above technical solutions.

Relative to the upper cascade of the solar cell should be noted that it may also be performed, as known in the above technical solutions. In our case it is formed on the tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP 11 (Figure 2) and included the following in sequence: p-AlInP layer 12, a p-InGaP layer 13, n⁺-InGaP layer 14 and n⁺-AlInP layer 15; in which the p-AlInP layer 12 performs the function layer, reflecting the minority charge carriers, the p-InGaP layer 13 is the base, n⁺-InGaP layer 14 is an emitter, a n⁺-AlInP layer 15 is wide-gap window.

As part of the multi-p-n-transition structure of a solar cell is provided podkonicky layer. As in the case of the implementation of the two-stage solar cell, and in case of realization of the triple junction is made on the layer, which is the wide-gap window the top of the cascade. For example (Figure 2), this layer, which is the n-GaAs layer 16, made on the n⁺-AlInP layer 15.

The top and bottom contact electrodes, respectively 17 and 18, a cascade solar cell is performed, for example, of silver or gold.

Cascade solar cell, for example, in a three-stage implementation (Figure 2) works as follows.

The flow of light energy falls on the cascade solar cell from the top contact electrode. The photons pass n⁺-AlInP layer 15 is a wide bandgap window, which suppresses surface recombination, thin n⁺-InGaP layer 14, which is the emitter, and are absorbed mainly in the p-InGaP layer 13 to the base of the upper cascade width forbids the military zone Eg ₁.

Generated when electron-hole pairs in the upper stage are separated by the electric field of the p-n junction of the upper cascade and create their part of the electric power allocated to the solar cell. Note that the electrons moving in a p-InGaP layer 13, which is the base of p-n junction, returned to him by the potential barrier of the p-AlInP layer 12 that functions as a reflection of minority carriers.

Photons with energiespast upper cascade pass tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP 11, the n-InGaP layer 10, which is a wide bandgap window average of the cascade, the vast recombination of charge carriers at the interface of the layers 9 and 10, a thin n⁺-GaAs layer 9, which is the emitter, and are absorbed mainly in the p-GaAs layer 8, which is the base of the middle cascade, with bandgap Eg₂.

Generated when electron-hole pairs in the middle cascade are separated by the electric field of the p-n junction of the middle cascade and create their part of the electric power allocated to the solar cell. Note that the electrons moving in the p-GaAs layer 8, which is the base of p-n junction is returned to it by the potential barrier of the p-InGaP layer 7 that functions as a reflection of minority carriers.

Photons with energies++GaAs-n⁺⁺GaAs 6, combined transparent buffer, thin n⁺-Si layer 2, which is the emitter, and are absorbed mainly in the Si substrate 1 to the base of the lower cascade with bandgap Eg₃. The role of the wide gap open lower cascade suppresses the recombination of charge carriers at the interface between layers 3 and 4, plays the GaP layer 4.

Generated when electron-hole pairs in the lower stage are separated by the electric field of the p-n junction (layers 1 and 2) the bottom of the cascade and create their part of the electric power allocated to the solar cell.

Tunnel diode n⁺⁺AlGaAs-R⁺⁺InGaP 11 serves for the electrical connection of the upper and middle cascades, and tunnel diode R⁺⁺GaAs-n⁺⁺GaAs 6 for electrical connection between the middle and lower cascades.

The solar cell in a two-stage implementation works the same way.

1. Cascade solar cell, containing a substrate, the multi-p-n-transition structure of the solar cell located on the upper side of the substrate, the lower and upper contact electrodes located, respectively, on the bottom side of the substrate and on the upper part of the multi-p-n-transition structure of the solar cell, while multi-p-n-transition structure together with the substrate is divided into cascades of the solar element, moreover, the lower cascade, which is the lower p-n-junction, made in the composition of the substrate, performing the function of a base, and a layer of opposite conductivity type relative to the substrate, performing a function of the emitter, characterized in that as the material for the bottom of the cascade solar cell used silicon, and the combined buffer in the composition of the multi-p-n-transition structure is made of optically transparent in the spectral region of photorearrangement silicon and the matching lattice constant of silicon and the material from which made the average cascade, which is the average p-n junction, or the top of the cascade, which is the upper p-n-junction.

2. Cascade solar cell according to claim 1, characterized in that the substrate carrying out the function of a base made of silicon p-type conductivity.

3. Cascade solar cell according to claim 1, characterized in that the multi-p-n-transition structure of a solar cell, containing a combined transparent buffer is performed as part of: n⁺ layer Si, which is a lower emitter p-n junction, located on the top side of the substrate, which is combined transparent buffer, tunnel diode p⁺⁺GaAs-n⁺⁺GaAs or tunnel diode n⁺⁺AlGaAs-p⁺⁺InGaP located on the combined transparent buffer, the top is asked, representing the upper p-n junction consisting of the p-AlInP layer, reflecting the minority charge carriers located on the tunnel diode, a p-InGaP layer, which is the base located on the p-AlInP layer, n⁺layer of InGaP, which is the emitter located on the p-InGaP layer, n⁺layer of AlInP, which is the wide-gap window, situated on the n⁺the InGaP layer and the n GaAs layer, which is podkonicky located on the n⁺the AlInP layer.

4. Cascade solar cell according to claim 1, characterized in that the multi-p-n-transition structure of a solar cell, containing a combined transparent buffer is performed as part of: n⁺layer Si, which is a lower emitter p-n junction, located on the top side of the substrate, which is combined transparent buffer, tunnel diode p⁺⁺GaAs-n⁺⁺GaAs, located on the combined transparent buffer medium cascade representing the average p-n junction consisting of the p-InGaP layer, reflecting the minority charge carriers located on tunnel diode p⁺⁺GaAs-n⁺⁺GaAs p-GaAs layer, which is the base located on the p-InGaP layer, n⁺GaAs layer, which is the emitter located on the p-GaAs layer, the n-InGaP layer, which is the wide-gap window, situated on the n⁺the layer of GaAs tunnel diode n⁺⁺AlGaAs-p⁺⁺InGaP, is the th to n-InGaP layer, the top of the cascade, which represents an upper p-n junction consisting of the p-AlInP layer, reflecting the minority charge carriers located on tunnel diode n⁺⁺AlGaAs-p⁺⁺InGaP, p InGaP layer, which is the base located on the p-AlInP layer, n⁺layer of InGaP, which is the emitter located on the p-InGaP layer, n⁺layer of AlInP, which is the wide-gap window, situated on the n⁺the InGaP layer and the n GaAs layer, which is podkonicky located on the n-AlInP layer.

5. Cascade solar cell according to any one of claims 1 to 3, characterized in that the combined transparent buffer is executed in structure: layer Ge_{of 0.15}Si_{of 0.85}providing accurate coordination lattices of Si and GaP located on the n⁺the Si layer, the GaP layer located on the layer Ge_{of 0.15}Si_{of 0.85}and a layer of variable composition thickness In_xGa_1-xP, provide "exit" on the lattice constant of the material from which made the middle or upper cascade, and located on the GaP layer, and with the increase of x from the boundary data layers from 0 to 0.5 continuously or discretely, in General, the combined buffer is transparent to light, noise upper cascades spectral region of photorearrangement Si.

6. Cascade solar cell according to claim 1, characterized in that the contact electrodes are made of Ag or Au.