Heterostructure for photocathode |
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IPC classes for russian patent Heterostructure for photocathode (RU 2335031):
 Vacuum integrated microelectronic device and method of production thereof / 2332745
Vacuum integrated microelectronic device contains substrate, anode layer, separating layer with apertures, insulation layer with cathode apertures, cathode layer, emission cathodes located in apertures of isolating layer. Emission cathodes are made in the form of geometrical cylinder which external surface is combined with internal surface of cathode aperture so that lower edge of cylinder wall is located at the same level as lower surface of insulation layer or as upper surface of separating layer, the upper edge of cylinder wall having electric contact to cathodic layer, thus there is a cavity in insulation layer within interval between cylinder wall of emitting cathode and aperture edge in separating layer.
 Electron emitting device, electron source and display unit with use of this device and methods of their production / 2331134
Invention relates to an electron emitting device, a source of electrons with the use of such a device and to the device of visual display. The electron emitting device includes the base layer, supplied with the first section, which contains silicon oxide and the second section, located on one line with the first section and having higher thermal conductivity, and the electro-conductive film, which includes a clearance, in this case the electro-conductive film is located on the base layer, the first and second sections have higher resistance than the resistance of the electro-conductive film, and the clearance is located in the first section. The proposed electron emitting device has a small dispersion characteristic of emission of electrons and lowered "fluctuation" quantity of emission of electrons.
 Cathodic fluorescent screen / 2322728
Proposed cathodic fluorescent screen incorporating transparent vacuum shell with front panel and board carrying anode electrodes covered with at least similarly colored phosphor, control electrodes, and wire cathodes secured by means of holders within vacuum shell orthogonally to anode electrodes connected to current-carrying tracks with external leads has its wire-wound cathode holders made in the form of flat linear springs parallel to anode board surface; holders are disposed beyond information field of anode board and mounted at minimal distance from anode and from one another; wire cathodes are made in the form of film-coated metal threads tightened on holders for hot or cold emission of electrons; control electrodes are disposed on face plate in the form of narrow film strips parallel to wire cathodes.
Cathodic fluorescent screen / 2322728
Proposed cathodic fluorescent screen incorporating transparent vacuum shell with front panel and board carrying anode electrodes covered with at least similarly colored phosphor, control electrodes, and wire cathodes secured by means of holders within vacuum shell orthogonally to anode electrodes connected to current-carrying tracks with external leads has its wire-wound cathode holders made in the form of flat linear springs parallel to anode board surface; holders are disposed beyond information field of anode board and mounted at minimal distance from anode and from one another; wire cathodes are made in the form of film-coated metal threads tightened on holders for hot or cold emission of electrons; control electrodes are disposed on face plate in the form of narrow film strips parallel to wire cathodes.
 Material of thermoemitter for surface ionization of organic compounds in air / 2320751
Molybdenum-based mono-crystalline alloy contains iridium in the amount of 0.05-0.15 mass-% and ruthenium in the amount of 1.0-10.0 mass-%.
 Method for producing multichannel discharge (alternatives) / 2317610
According to first alternative method for producing multichannel discharge involving DC voltage supply between jet electrode and metal electrode, used as jet electrode is fluidic electrolyte incorporating laminar flow in top part of jet and split transient jets obtained by applying voltage of 300 ≤ U ≤ 550 V between electrodes with discharge current of 80 ≤ 1 ≤ 10 000 mA and jet laminar section diameter dj ≤ 0.5 mm at total length of jet l = 8 - 120 mm, electrolyte discharge 2 ≤ G < 16 x 106 m3/s with saturated solution of jet electrolyte and composition having atom ionization potential Uφ < 6 eVm, where U is voltage between electrodes; I is current in laminar-section electrical discharge; dj is diameter of jet laminar section; G is electrolyte discharge. According to second alternative method for producing multichannel discharge involving voltage supply between jet electrode and second electrode, electrolytic cell is used as second electrode. According to third alternative method for producing multichannel discharge, used as second electrode is jet that constitutes angle with first one of 0 ≤ α ≤ 180°. According to fourth alternative method for producing multichannel discharge, used as second electrode is insulator with metal current lead.
 Method and field-emission lamp for controlling field emission current of lamp / 2316844
Proposed method for controlling field-emission current of lamp that can be used in elements of functional electronics, such as amplifiers, oscillators, short high-voltage pulse generators, and the like involves variation of field strength about cathode by varying cathode-to-anode distance. Field-emission lamp incorporating anode and field-emission cathode spaced short distance apart has its cathode made in the form of multipoint electron source which is essentially surface with regular micron projections whose specific ohmic resistance is higher by a few orders of magnitude than specific resistance of metals; cathode is installed on component that changes geometric dimensions under impact of energy supplied. Input control circuits and output circuits of field-emission lamp are electrically insulated.
Filamentary cathode and its manufacturing process / 2314592
Proposed cathode that can be used, for instance, in X-ray tubes has refractory metal base and electron-emitting metal layer of same alloying metal or its alloy. Cathode manufacturing process includes manufacture of wafer, for instance in the form of refractory metal alloy foil capable of activating depending on temperature, heat treatment in vacuum for its degassing, and activation; in the process alloy is produced by alloying base metal with metal whose emissive characteristics are higher than those of alloy base metal; formed on wafer surface upon its activation in vacuum to produce at least one alloying-metal single layer is electron-emitting layer of desired thickness and of same alloying metal or its alloy. Filamentary cathode produced in this way is characterized in high emissive characteristics at temperatures ranging between 2000 and 2200 °C in high vacuum under cyclic temperature conditions and mechanical loads.
 Cathodoluminescent screen / 2312421
Proposed cathodoluminescent screen has vacuum envelope assembled of two flat transparent glass face plates with anode electrodes covered with transparent conductive layer and phosphor of at least one color; substrate carrying flat emitters forming light-emitting cell or pixel connected through relatively perpendicular anode Y buses and emitter X buses with terminals meant for connecting voltage supplies; and dielectric frame interconnecting face plate and substrate through sealed joint; novelty is that each flat emitter of pixel is made in the form of two combs made of thin surface-conductive films inserted one into other; combs (films) are disposed in same plane on substrate; one of combs is connected to X buses and other one, to Y buses; dielectric mask is disposed on substrate between light-emitting pixels and transparent face plate carries black dielectric mask.
 Cathodoluminescent screen disposed on active matrix substrate / 2310946
Proposed cathodoluminescent screen which is disposed on active matrix substrate and has vacuum envelope incorporating face glass plate and bottom glass plate mounting active matrix substrate with dual-channel addressing system (X, Y) and control system for each of plurality of phosphor-covered light-emitting components of at least one color, as well as set of filamentary hot cathodes, glass frame tightly joining face and bottom glass plates is diode-type screen; ratio of distance between centers of filamentary hot cathode bases in set of filamentary hot cathodes to that between disposition planes of set of light-emitting components and set of hot cathodes meets following condition: 0.8 ≤ tcb/xc-a < 1.6, where tcb is distance between centers of filamentary hot cathode bases in set of filamentary hot cathodes; Xc-a is distance between disposition planes of set of light-emitting components and set of filamentary hot cathodes; duty factor Fcb/tcb meets following condition: 0.6 · 10-2 ≤ Fcb/tcb ≤ 1.6 · 10-2, where Fcb is diameter of filamentary hot cathode base.
 Multipurpose biocompatible nanostructue membranulas for medicine / 2333009
The invention refers to biocompatible wearproof nanostructure thin-film materials on the basis of titan carbonitride, used as membranulas for manufacturing imlants, working under load. Total concentration of the basic and additional elements in a covering has the following ratio:
Nanocomposite material / 2332352
Invention concerns nanotechnologies and is designed for production of nanocomposite materials with efficiently adjustable optic properties, which can be applied in non-linear optics, IT, optic memory device development etc. Nanocomposite material contains nanoparticles, intermediary link molecules (particles changing their spatial configuration under the influence of external light source), and linked molecules (particles exhibiting some optic properties in vicinity of nanoparticles), all three components linked in sequence in a spatial cluster structure. Intermediary link molecules, changing their spatial configuration under the influence of external light source, can include additives - functional substitutes increasing their linking properties.
 Nanostructural lockout device of micromanipulator / 2331505
Lockout device consists of base, clamping device and lockout device working surface, produced from nanostructural material. In the base piezoelectric elements are installed in mesh-like order.
Method of sheet organic glass production for neutral light filters / 2330213
Invention is related to the field of sheet organic glass production by means of polymerisation in mass of ethers of (meth)acrylic acid, which is used for production of neutral light filters that are used in personal protection gear (glazing of protective helmets of pilots) and in glazing of sport airplanes. Method is suggested to produce sheet organic glass for neutral light filters by means of (co)polymerisation in mass of methyl methacrylate or its mixtures with methacrylic acid or its ethers in the presence of UV-absorber, initiator of radical polymerisation and light-absorbing additive - product of methane pyrolysis, which includes prepolymerisation of monomer, realisation of ultrasonic effect at prepolymer with light-absorbing additive and depolymerisation of prepared mixture in plane-parallel form until full conversion, at that as light-absorbing additive functionalised carbon nano-tubes are used with implanted COOH groups, and prepolymerisation is performed in the presence of light-absorbing additive, and prior to depolymerisation to prepared prepolymer additionally monomer is added in mass ratio 1:(0.5-1.5) accordingly.
Anti-friction polymer composition / 2329279
Invention pertains to polymer composite materials for anti-frictional purposes, which can be used for making component parts of friction assemblies of machines and equipment. Description is given of the polymer composition, containing polytetrafluoroethylene and aluminium oxide with particle size of 9-11 nm as filler material, with the following ratio of components: nano-size aluminium oxide - 0.1-2.0 mass %, polytetrafluoroethylene constitutes the remaining percentage.
 Sorbent for cleaning water off heavy metal ions / 2328341
Sorbent for cleaning water off the heavy metal ions consists of the grinded zeolite, nanophase iron hydroxide and nanophase aluminum metahydroxide at the following ratio in mass percent: 12-18 of nanophase iron hydroxide; 5-13 of nanophase aluminum metahydroxide and zeolite - the remaining.
 Thin-film material that contains functional components and method of preparation of thin-film material that contains functional components / 2326898
Invention may be used for preparation of new thin-film composite polymer materials and coatings, which are used in sensor, analytical, diagnostic and other devices, systems of atmosphere and hydrosphere condition forecasting and others. Thin-film material that contains functional components and molecules of polyelectrolites, is formed on the surface of base and is made in the form of layer or layers of poly-ionic complexes of functional components, which are connected to layer or layers of polyelectrolites, at that the quantity of functional components in poly-ionic complex more than 1.Functional components are colloidal particles. Method of preparation of thin-film material consists in performance of procedure of alternating successive layer adsorption of components from water phase on the base. At that beforehand in water phase poly-ionic complexes are formed, which include the molecules of polycations or polycation, polyanions or polyanion and functional components in the quantity of more than 1, creating stochiometric surplus of cation or anion groups of polyelectrolites and functional components and providing difference from zero of summary electrostatic charge of cation and anion groups of such complexes.
 Method for producing palladium containing catalyst of hydrogenation / 2326731
Invention can be used in controlling the rate of the autocatalytic reactions of hydrogenation. The method of producing the palladium containing hydrogenation catalyst is described, including the reduction of bivalent palladium from the initial compound and precipitation of the reduced palladium at the carbon nanomaterial, and, as the initial compound, the (1-5)×10-5 mol/L water solution of tetraaqua palladium (II) perchlorate is used, and 0.1-0.5 mass percent of the reduced palladium is plated on the carbon nanomaterial.
Thermoplastic material containing nanometric layered compounds / 2326138
Invention pertains to a mixture, the method of obtaining it, method of obtaining the product made from the mixture, and to products in form of layers of sheet material, hollow or solid pipes, and pipe or reservoir bottles. The mixture contains at least one thermoplastic matrix and particles based on a phosphate of zirconium, titanium, cerium and/or silicon. In that case, at least 50% of the above mentioned particles are in the form of nano-metric layered compounds, with a form factor less than or equal to 100. The mixture can be obtained through different methods. One alternative involves mixing the particles based on a phosphate of zirconium, titanium, cerium and/or silicon in the form of nanometric layered compounds with monomers and/or oligomers of a thermoplastic matrix before or during the polymerisation stage. The thermoplastic matrix is then polymerised. In another alternative, the above mentioned particles in the form of nanometric layered compounds are mixed with the thermoplastic matrix, and when necessary, the obtained mixture is mixed with at least one thermoplastic matrix. The product is made using an extrusion or moulding device.
 Label (alternatives) / 2326029
Invention pertains to labels, more specifically to polymer film stickers, used on containers with use of a water adhesive. The engineering problem is solved by that, the label consists of a polymer outer material with upper and lower surfaces, a porus layer with upper and lower surfaces and a water adhesive, put in contact with the lower surface of the porous layer. The upper surface of the porous layer is located under the outer material. The porous layer has pores with average diameter approximately ranging from 1 nm to 100 nm, while its porosity approximately ranges between 0.1 ml/g and 2 ml/g.
 Magnetic materials / 2244971
Memory element has nanomagnetic materials whose axial symmetry is chosen to obtain high residual magnetic induction and respective coercive force. This enlarges body of information stored on information media.
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FIELD: physics. SUBSTANCE: invention may be used in structures of photocathode in optoelectronic systems, secondary emission photocells, detector modules of ionising radiations, systems of images recognition, etc. According to invention, in heterostructure for photocathode that contains diamond layer of p-type conductivity with nanodimensional topological irregularities on its surface, as nanodimensional topological irregularities auto-emissive diamond points or diamond crystalline nanoparticles are used that are regularly positioned, surface of layer, except for the said irregularities, being covered with conducting amorphous carbon or nanocarbide film. Heterostructure may be installed on wafer, in which cavity is provided. EFFECT: possibility to obtain efficient photocathodes with expanded spectral area of radiation reception on the basis of suggested heterostructure, at that obtained photocathodes being resistant to thermal and radiation loads. 2 cl
The invention functionally can be used as the material for the device, proportional to convert optical radiation into a stream of electrons, and the action of which is based on the effect of photoelectron emission. The invention can be effectively used as a photocathode in optoelectronic systems, for example, in electro-optical converters), photomultipliers, in the detector modules of ionizing radiation, image recognition, etc... As far border of the conversion and quantum yield are determined by the work function of electrons, while generating the most types of photocathodes for the IR spectral range using materials with a low work function. To this end, the working surface of such materials, with the aim of reducing the negative electron affinity, adsorb "electrophoretically" atoms. In particular, known analogs of this invention may be noted the materials for photocathodes of alkali halide compounds (e.g., antimony-cesium photocathodes), photocathodes based on cesium telluride, photocathodes based on the p-type gallium arsenide and gallium arsenide-gallium aluminum or gallium arsenide-indium arsenide, as well as photocathodes based on multilayer narrow-gap semiconductor heterostructures [1, 2]. It is not the remains of these photocathodes - analogues are unsatisfactory stability associated with the potential migration of cesium atoms, the relatively low values of the quantum yield for "zirovanii" metal photocathodes, and low radiation resistance photocathodes based semiconductor Homo- (hetero-) epitaxial structures and the need for forced cooling devices based on narrow-gap heterostructures. Known field emission materials based on diamond films, the possibility of effective electron emission from which is based on a negative affinity for electrons from diamond films p-type conductivity [3]. However, they cannot be used for proportional conversion of infrared radiation in the electron flow due to the transparency of the diamond to the IR radiation. For efficient proportional conversion of light quanta (including near IR region) in the flow of electrons, the necessary materials with a high coefficient of "black" and high photoemission ability. The presence of a negative electron affinity of the diamond films of the p-type will allow nonequilibrium electrons efficiently to leave the surface of the film. Thus, if, in addition, to implement photocathodes based on diamond films, the ability to efficiently convert the photons of infrared radiation in NERV the ovesna electron-hole pairs, that is because of the negative electron affinity it will allow to count on the possibility of implementing the efficient cathodes. In this case, they can be used as photocathodes, alternative photocathodes based on the volatile alkali halide materials, or photocathodes based on narrow-gap heterostructures numerous analogs of the present invention. Real diamond materials, especially polycrystalline diamond film, not have a negative electron affinity, which, apparently, is due to their high level of defects. Currently, however, there is an experimental material confirming a stable field emission of electrons into vacuum from monocrystalline or polycrystalline bulk diamond films p-type conductivity [4], in a certain way microstructured (having, for example, on the surface of the system of needles). For more, not less valuable advantage photocathodes based on diamond films, high resistance to ionizing radiation (the highest of all solid non-metallic materials [5]). In the present invention, due to the observed properties of diamond microstructured structures [4], we propose to use them as a prototype of the present invention. Direct IP is the use of diamond films as a material for photocathodes in the optical range (visible and near infrared parts of the spectrum of electromagnetic radiation) is impossible, due to shirokozonnoj diamond, and therefore a high degree of transparency to electromagnetic radiation in the optical frequency range (width of the forbidden zone diamond ˜5 eV, the wavelength of the red border ˜0.4 µm). The aim of the present invention is to provide a radiation resistant and stable photocathode with an extended spectral region receiving radiation including near IR region. For efficient use of diamond microstructured films photocathodes we offer a heterostructure that includes layers of diamond microstructured films and diamond-like carbon film [6]. This design, in our opinion, will allow you to get the photocathodes for a wide optical range of electromagnetic radiation, including visible and near (...6,0 0,9 µm) IR range. Indeed, the ability to effectively use this design for the development of IR photocathodes based: - on the possibility of autoemission electrons from the diamond microstructured films of p-type conductivity [4], which allows to calculate the effective output of nonequilibrium electrons; on the technical capabilities of the deposition on the surface of a microstructured diamond films (micro) nanoscale films with high ratios of "black" and satisfy your high is satisfactory adhesive properties [6]; - high resistance of the diamond film to a dose rate of ionizing radiation (radiation resistance) [5]. Thus, it becomes possible to realize the photocathode, working effectively in a wide spectral region (including the near IR region). The objective is achieved by designing heterostructures consisting of diamond microstructured film of p-type conductivity (in the particular case of the film surface on which are formed regularly spaced automatisee tip) and a film made of a material that efficiently absorbs electromagnetic radiation at optical and IR ranges, for example, diamond-like carbon or nanocarbon materials. There are two options of design implementation photocathode on these materials. Option 1. Heterostructure containing a layer of diamond p-type conductivity, with nanoscale topological inhomogeneities on the surface, the surface of which, except the surrounding areas of these inhomogeneities, is covered with a conductive amorphous carbon or nanocarbon film, of a thickness of less height of these inhomogeneities. Option 2. Heterostructure for option 1, characterized in that the surface of heterogeneous phase region is made of diamond nanocrystals integrated the s (embedded) in a conductive amorphous carbon or monocarbide phase and is situated on the substrate, in which the cavity area that includes a statistically significant number of the above-mentioned diamond nanocrystallites. The result is a design photocathodes, in which, in the direction of application of the field decreases the potential barrier, and therefore, in this direction sharply increases the probability of autoemission nonequilibrium electrons. To implement based on diamond and carbon films efficient photocathodes in the optical range, including the infrared range, in full compliance with the proposed options 1 and 2 structures, it is proposed to do the following set of process procedures. For option 1. To take the diamond film and at least one of its surfaces micro (nano) structured (for example, by forming it of a system of needles); on the surface of the thus formed diamond coating, except at least the local areas of nanoscale diamond needles by emitting the electrons, causing carbon or nanocarbon film. However, these microheterogeneity can be formed as follows: on the surface film of diamond apply a mask (for example, vanadium/aluminum), then using a photo-or electron lithography on a given pattern formed in the photoresist circles (or rings), then we perform the etching su is th the surface of the mask (aluminum and vanadium), which was opened after removal of the exposed areas (i.e. stay away from the mask only mentioned circles or rings of V/Al), then we perform the gas-phase etching of the surface layer of the diamond masked by aluminium sections in the form of circles (rings) - to the depths ˜0,5...1,0 μm, then the deposited diamond-like carbon or nanocavity layers of a thickness of less height above heterogeneity (˜0.15...0.3 microns). At the end of this set of procedures received heterostructure (surface - of a thickness of ˜0,15 0,30...mkm - heterogeneous phase region)consisting of diamond-like carbon phase (due to the high ratio of black performing the function of detecting the infrared image and proportional to its transformation into a nonequilibrium electron-hole pairs) and diamond needles with submicron (in the case of a mask in the form of a circle) in diameter, or tubes with submicron nanometer diameter and the thickness of the walls (in the case of a mask in the form of a ring) and height ˜ 1 micron. Micro- (nano-) structure of the diamond film may be made by dry plasma-chemical etching (for example, in a mixture of argon and oxygen) its surface [7, 8], masked by a given pattern film of aluminum. Apply absorbing optical radiation coating of conductive carbon or NanoCare the Noah films by using plasma thermal, or magnetron-thermal method of application [9]. For option 2. Apply on the surface of the substrate (including a substrate coated with a functional layer, such as carbon layer) nanocrystallite of the diamond. Then through the use of thermal plasma, or magnetron-thermal method of application [9] precipitate carbon or nanocarbon film. Then by the method of etching liquid or gas-phase plasma ICP (method indutsirovanno-coupled plasma) etching to form in the substrate cavity until lying on her heterophase structure. Thus, mentioned in the second embodiment, the functional surface layer (the thickness is less than 0.3 μm, the characteristic thickness of the absorption of infrared radiation in the black carbon layer), as in the first embodiment represents a heterogeneous phase region (side by side phase of diamond and phase carbon or carbide, for example, Mos-carbide molybdenum). This option greatly simplifies the method of manufacturing a heterostructure for photocathode, reducing it almost to the deposition of carbon or nanocarbon film on the surface of the substrate with pre-applied on a given pattern by the powder of diamond nanocrystallites. The deposition process may be, for example, that using ultrasound in isopropyl alcohol have implemented the e diamond nanocrystallites in the photoresist; perform photolithography on the photoresist and get the needed pattern of photoresist on the substrate; conducting annealing, burning the photoresist; the resulting structure of the deposited diamond-like carbon or nanocavity layer. In the second design option, in addition to the diamond substrate can be used in any other, for example of silicon. As the latter will be the absorbing medium, the area of the substrate under the working layer is subject to subsequent removal. Thus, the active region of the heterostructure to the photocathode will be in the form of a membrane on the substrate. The procedure of forming the cavity may be: is masked with aluminium front (with the already formed heterostructure for photocathode) and the back side of the substrate; on the backside photolithography is performed on the aluminum and it reveals a square (circle, for example) over an area of the substrate to be removed by etching, is performed (for example, by ion-linked etching) etching "well" in the thickness of the substrate until the aforementioned heterogeneous phase region (or, if the layer of polycrystalline diamond grown on silicon substrate, Watervliet well up to the diamond layer). The cross-sectional area referred to "the well" has to significantly exceed the area of nanosized topologies the Oh heterogeneity with its surroundings. For example, when density of nanocrystallites diamond ˜1012cm-2the cross-sectional diameter of the well must be substantially greater than 10 nm (an area larger than 100 nm2so that the cross section of the well was statistically significant number of discontinuities ˜1000...10000 units (for reasons of minimizing electrical noise). I.e. the diameter of the well must choose greater than 1 μm, it is achievable within current technological capabilities, for example, on the structures of the SOI (silicon on insulator). For the most tasks diameter wells will be sizes ˜0,5...100 mm The positive effect in the inventive structures when implementing the above methods of their realization is achieved by the following causal events: photons, absorbed carbon (or monocarbide) film with a high ratio of black in the range 0.4...6,0 µm, give birth to it nonequilibrium electron-hole pairs; - born non-equilibrium electrons in tandem external electric field potential difference tunneling in free space through the potential barrier of the "triangular" shape formed by the superposition of energy affinity nanoscale thickness of the carbon film, and the film diamond and keen in the direction of the "pull" of the electric field near the diamond NAS the size of the tip. The combination of these reasons leads to the possibility proportional to convert optical images into a picture image in photoelectrons. An example of the construction of the photocathode and the method of its implementation. On prepared by known methods (shaded in organic solvents, for example benzene or isopropyl alcohol, and the subsequent processing nizkoosnovnymi flow of oxygen-argon plasma) sample surface of the monocrystalline (or rough) diamond film (substrate) apply (for example, by the method of thermal spraying) two-layer film coating vanadium/aluminum, with layer thicknesses, respectively, 30 nm/5000 nm. Known methods (for example, by photolithography or electron lithography, followed by etching of the listed layers) performed the predetermined pattern on the applied coating, for example, in the form of a set of regularly spaced circles with a diameter of 0,5...1,0 μm. Then put the sample into the working chamber of the dry chemical etching, such as etching in the environment of the oxygen-argon plasma (0,2:0,8). When the plasma power ˜500 watts, time, etching ˜20 minutes on the surface of diamond films formed by the combination of micro-size particles of needles height ˜...1,0 0,7 µm with nanoscale diameter of the above-mentioned points. Then pose the CTV total magnetron sputtering and plasma-thermal deposition of reagents from molybdenum and carbon or thermal deposition of carbon on the microstructured surface of the diamond film apply a film of nanocarbon metals (molybdenum, chromium, tungsten or titanium), or diamond-like amorphous carbon having a wavelength range of 0.4...6 μm, the ratio of black ˜0,8. To a conductive carbon film (or nanocarbon metals)deposited on diamond microstructured film, methods of microelectronic technologies (for example, thermal evaporation and photolithography on the deposited film) formed by a galvanic connection with the contact pad. In the case of another constructive option (option 2) implementation of the photocathode (with the use of conductive carbon or monocarbide absorbing film and nano-sized diamond crystallites) on the carrier substrate, e.g. a substrate of monocrystalline silicon, the above methods gas-phase deposition cause carbon or nanocarbon film nanoscale thickness. Then, the surface of the obtained film are covered with a photoresist, is formed in the figure and is applied by drawing, for example, using ultrasound, the arrays of diamond nanocrystallites, then burn (dissolved) photoresist and through re-deposition of nanoscale thickness of the carbon film fixed nanocrystallites on the surface of the discussed patterns and then form between nanocarbon film and the contact pad galvanic connection. The proposed design of photocathodes are made using eco-friendly CVD technology with carbon sources, with a fairly low temperature (˜70...120° (C) deposition of the active layers, which allows not only to produce them as a separate component of hybrid design photomultiplier tube or an electron-optical Converter, but also to integrate the discussed photocathodes in the finished integrated circuit and the device being thus entirely within the integral structure (schema). The materials used and the structure as a whole are radiation-resistant and heat-resistant.Literature: 1. Salikov, VA the night vision Devices. // Special technique, 2000, No. 2, pp. 40-48. 2. Estera L/, Sainer, T., at oth. // SPIE, 1994, v.2551, p.135-143. 3. F.J.Himpsel, J.A.Kuap, J.A.van Vechten and D.E.Eastman. Phys. Rev. B, 20, 624(1979) (prototype). 4. R.J.Nemanich, P.K.Baumann, M.C.Benjamin and oth. Appl. Surface science 130-132, 694, (1998). 5. C.Davies. Proc.R.Soc. (London), A36, 507 (1974). 6. V.K.Dmitriev, V.N.Inkin, G.G.Kirpilenko, B.G.Potapov, E.A.Ilyichev, E.Y.Sheukhin. // Diamond and related materials 10 (2001), 1007-1010. 7. Honda, K., T.N. Rao, D.A. Tryk at other. J. Electrochem. Soc., 2000, 147, 659-667. 8. V.V.Dvorkin, Il'ichev E.A., Poltoratsky E.A., at other. // Diamond and related materials, 12, 2003), 2208-2218. 9. L.P.Sidorov, V.K.Dmitriev, V.N.Inkin. Patent to be publiched in Russian, 2000103496, 25-02-2000. 1. Heterostructure for photocathode containing layer of diamond p-type conductivity with nanoscale topological inhomogeneities on it n the surface, characterized in that as nanoscale topological inhomogeneities used regularly located automatisee diamond tip or diamond nanocrystallites and the surface layer, except these inhomogeneities, is covered with a conductive amorphous carbon or nanocarbon film. 2. Heterostructure for photocathode according to claim 1, wherein the heterostructure is situated on the substrate in which the cavity.
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