The invention relates to a device and method of determining the orientation of a crystallographic plane with respect to the crystal surface, as well as to the apparatus and method of cutting a single crystal in a cutting machine.

For some applications it is necessary semiconductor wafer with the so-called disorientation. As shown in figure 1, in the semiconductor wafer 1 with the disorientation of a certain crystallographic plane, e.g. the plane (100) is not parallel to the surface 2 of the plate. Angle ϕ their misorientation in this case is the angle that forms the vector [100], perpendicular to the plane (100), with normal vector N_operpendicular to the surface 2 of the plate. If this disorientation is needed, the single crystal from which the cut plate, incline at a predefined angle φ with respect to an axis T that is located in the cutting plane, i.e. on the surface 2 of the plate.

In the well-known way interior circular sawing for such of their misorientation orientation of the crystal, which is attached to the holder workpiece, determined using x-ray goniometer, by measuring the position Brekhovskikh reection with respect to the holder of the processed product. By the holder holding undertake Aut saw for internal annular cutting, which has a horizontally and vertically move the support plate, on which the measured orientation of the crystal can be adjusted or controlled to a desired value. First cut off the plate again measured on the x-ray goniometer and the caliper if necessary re-adjust. Inaccuracies in the orientation, which occurs when the holder of workpiece is inserted into the device for an internal ring sawing, thus, can only be repaired by re-measurement and re-adjustment.

The known method of sawing wire such adjustment re-measurement and re-orientation is impossible, as all the plates are cut from a single crystal at the same time. As shown in figa, by sawing wire monocrystal 3 held on the holder, not shown in figa that using the drive of the conveying device can be moved towards the ground wire 4 wire saws, with velocity v supply and back to the original position. Wire saw consists of a set of parallel wires 4a, 4b, 4c, which are stretched by rollers, not shown in figure 2, and is movable in planes perpendicular to the Central longitudinal axis M of the single crystal 3, in the directions shown by arrows a and b on figa. The device is spilivaya wire also contains devices 5 and 6 for applying the paste containing particles of silicon carbide wire 4a, 4b, 4c on each side of the single crystal 3. When sawing wire with electrically associated cutting particles, in addition, provides a device for applying a cooling lubricant.

Known wire saws with device orientation, which in the case of adjustment required of their misorientation, as you can see in fig.2b, moves only in a plane parallel to the plane of the wire pad 4. For this purpose, the crystal is measured outside of the wire saw in the x-ray goniometer and attach to the base plate for the workpiece so that the disorientation that you want to give, lying in a horizontal plane, i.e. the angle ϕshown in figure 1, was in a plane parallel to the wire pad 4. Measurement of x-ray goniometer in this case relate to the thrust surface of the support plate for the workpiece, which is then applied to the reference end surface on the wire saw. Then the desired orientation set horizontally. However, in the case of the above method does not detect errors due to contamination resistant and the reference end surfaces, as well as errors in adhesion, which wasn the cabins, when the single crystal is attached to the base plate workpiece, since the measurement of the orientation takes place outside the machine. In addition, the single crystal should always be rotated so that given the disorientation lying in a horizontal plane parallel to the wire pad 4. As a result, the direction of processing is governed by desired disorientation and therefore may vary from one crystal to another.

From U.S. patent 5904136 it is known that the desired angle of inclination for the installation of their misorientation can be obtained in the tilt device located outside of the device for wire sawing, where the orientation of the single crystal is determined using an x-ray device and then the crystal tilt to tilt the device in horizontal and vertical directions relative to the wire platform. However, errors may occur with the introduction of tilt of the device together with the crystal in the device for wire sawing also cannot be removed.

The objective of the invention is a device and method for determining the orientation of a crystallographic plane with respect to the crystal surface, and apparatus and method for cutting a single crystal in a cutting machine, using which you can make accurate cuts and at the same time you increase the od of the plate during cutting of the single crystal.

The problem is solved by the apparatus according to claim 1 or a device according to claim 19 of the formula of the invention and the method according to claim 10 or 25 of the claims.

Preferred embodiments of the invention are given in the dependent clauses attached claims.

The method and apparatus have the advantage consisting in the fact that the quality of the plates and which allows higher flow rates while cutting. As a result of high quality plates can be reduced considerably additional stages of processing that are usual in other cases. In addition, you can increase the accuracy of the orientation.

What follows is a description of a variant of implementation with reference to the figures. The figures shown:

Figure 1 is a schematic depiction of a wafer;

Figa - schematic representation of the apparatus for wire sawing to a cut single crystal;

Fig.2b - schematic representation of the regulation of their misorientation in the device for wire sawing according to the prior art;

Figure 3 is a schematic depiction of the forces that occur during wire sawing;

Figa-4d - two-dimensional graphical representation of the deformation and inclination of the cut wire plates as a function of the direction of processing at two different values of filing;

Fig.5b image of the single crystal that is inserted in the holder of the saw in the direction of one of the end surfaces;

6 is a schematic depiction of a device orientation according to the invention, the device for wire sawing; and

7 is a schematic representation of part 6.

In order to better understand below using figure 1-4 first describes the forces acting on the plate during wire sawing. As can be seen in figure 3, during the wire sawing wire 4a, 4b, 4c penetrate into the single crystal 3 cutting plates 1a, 1b, 1c, etc. During the cutting operation after reaching the critical penetration depth in the single crystal 3 diamond particles wires form cracks, which lead to the removal of material due to mutual cross-clutch. Specified critical depth of penetration depends on the orientation of a given crystallographic direction K, located on the surface 2 of the plate, for example, the direction [010] direction V supply, as explained below.

As you can see in figure 1 and 2a, the characteristic orientation of the single crystal 3 is manifested in the form of a flat slice the outer surface, the so-called platform, which was caused by a specified way after growing the single crystal 1 so that a known angle αthat this crystallographic direction K forms with the normal N_Fto the flat edge of the external surface on the surface 2 of the plate. As known angle αand, consequently, also known angle ρ between this crystallographic direction K and the direction V supply of the single crystal in the plane perpendicular to the Central longitudinal axis M of the single crystal and, consequently, in the plane of cutting. It should be noted that instead of the platform on the outer surface of the single crystal can be made the cut called "the notch". The key factor is only a superficial characteristic, the location of which relative to a given crystallographic direction K is known.

As can be seen in figure 3, during the penetration of the wires 4a, 4b, 4c, etc. in a single force F_x ^-or F_x ⁺acting on each wire, differ on the basis of the calculation of critical loads L_x ⁺or L_x ^-on the front and back sides of S or S' of the plates 1a, 1b, 1c, etc. so that the resulting imbalance of power leads to the displacement of the wire up until the repulsive force of the stretched wire is not Voss is install the balance of power. The critical load is physically equivalent to the critical depth of penetration. In each case, on figa-4d shows the deformation or inclination of the plate as a function of the angular adjustment of a given crystallographic direction K with respect to the direction V supply. From this it follows that the required small deformation or small quantitative value of the slope of the gain or reducing the speed v of submission, or at a high feed speed by adjusting the angle of the crystallographic directions of K relative to the feed direction. When the feed speed of 2 mm/min, for example, reach the minimum values of the slope at approximately 60°, 150°, 240° 330°. In the case of such values resulting force, which arises from the sum of the deforming forces F_x ^-or F_x ⁺, minimum. Preferred angles at which the above-described deforming forces are compensated and wires penetrate into the crystal without lateral deviation depends on the material of the single crystal or in the case of semiconductors from added impurities and other factors. They must be determined empirically for each material of the single crystal.

The device according to the invention for orientation of the single crystal in a cutting machine, in particular, in the apparatus for wire sawing, allows the use of the SQL this effect and at the same time accurately adjusted to the desired disorientation ϕ .

As you can see in figa, the device for orientation of the single crystal in the cutting machine includes a device 10 that is actually located outside the cutting machine, for determining the angle between the crystallographic plane, e.g. the plane (100), and the end surface 2 of the crystal. The device 10 includes a holder 11 for single crystal 3 with the flat surface 11a, which is preferably designed in the form of a vacuum table-holder, which is almost cylindrical single crystal is held with its front surface by the action of partial pressure. The azimuthal orientation of the crystal, i.e. the angular position of the following cutting plane, determined by the orientation of the platform 7 or other external characteristic in the device 10. The single crystal 3 in this case, or quickly attach to the base plate 12 for sawing, which it then can be inserted into the apparatus for wire sawing, or adhesion occurs after the measurement. The angular position of the platform 7, attached to the single crystal 3 relative to the holder 11, regulate by means of the stopper 13 so that the angle ρgenerated data crystallographic direction relative to the direction of feed of the cutting machine, as shown in fig.5b had previously empirically determined the second value, as described above, for minimum deflection of the wire and, consequently, the maximum possible feed rate. The holder 11 can be moved in the vertical direction. In addition, the holder 11 is able to rotate by a rotation mechanism, not shown, around its Central axis, which runs parallel to the Central longitudinal axis of the single crystal. Opposite or above the free surface 2 of the single crystal 3, which forms a surface of the first plate to be cut, set the autocollimating telescope 14, which is positioned so that its optical axis O coincides with the normal to the surface 11a of the holder 11. In addition, the x-ray goniometer consisting of x-ray tube 15 and its associated detector 16, which can be moved in a preset angular range, for example, approximately 20°around the initial point on the surface 2 of the single crystal. In addition, a set of plane-parallel optical mirror 17. The mirror 17 can be fixed using a vacuum mechanism, not shown, on the end surface 2 of the single crystal. In addition, the mirror 17 can be fixed on the end surface 2 of the single crystal 3 so that it was lying on the optical axis autocollimating telescope. Range measuring range is of the autocollimating telescope is approximately ± 1°. In the case when the angle, which is the end surface 2 of the crystal relative to the flat surface 11a exceeds the specified range, provided the plate is an optical wedge, which are not shown, having a given angle of the wedge, which causes the specified deflection, for example, on 2°in order to bring the surface to be measured again in the measuring range.

The adjustment device 10 is designed so that the first angular measurement of the orientation of the mirror is performed automatically by the autocollimating telescope, and then carry out the measurement of the desired crystallographic plane, e.g. the plane of (100) lattice by x-ray goniometer. Adjustment, in addition, construct it in such a way that the second stage can again perform the same measurement with the rotation of the single crystal at 90° around the Central longitudinal axis M

As can be seen in Fig.6 and 7, the apparatus for cutting a single crystal, which in this embodiment is constructed in the form of the apparatus 20 for wire sawing, includes rollers 21 to the wire, which wire pad 4 is adjustable in a horizontal direction, and the guide rollers 22 underneath them to return the wire to the pad below the actual plosko and wire which is cutting. Higher ground wire 4 set the input device 23, whereby the single crystal can be moved on the supporting plate 12 for sawing, which is attached to the device 24-X-Y-alignment in the vertical direction relative to the wire pad with a given velocity v supply. The device 24-X-Y-alignment is constructed so that it was able to shift the monocrystal 3 relative to the coordinate system X_m, Y_m, Z_mon the side of the machine in a direction parallel to the wire pad 4, which is the direction of X_mand in the direction perpendicular to the wire pad 4, which is the direction of Y_m. The limits of rotation of approximately ±5° X_mand about ±2° in the direction of Y_m. In addition, set the autocollimating telescope 25, which is identical to the autocollimating telescope 14 of the device 10, the optical axis O which lies in a plane parallel to the wire pad 4. The autocollimating telescope 25, in addition, configured in such a way that its optical axis at the location of the single crystal lies approximately at the level of the Central axis of the single crystal. The device 26 for the evaluation set in order to estimate the angular measurement of the autocollimating telescope./p>

In addition, the device 20 contains a mirror 27, which is identical to the mirror 17 of the device 10 and which is installed through the vacuum mechanism, not shown, on the end surface 2 of the single crystal 3 face-to-autocollimating telescope 25. In addition, set the plate 28 of the optical wedge is rotated in the socket 29 for a given deflection, such as 2°. The mirror 27 and the plate 28 of the wedge is connected to the holder 30, which contains the vacuum mechanism. Also installed the stopper 31, which captures a predetermined distance between the mirror 27 and the plate 28 of the wedge and the device 24-X-Y-alignment.

In addition, for adjustment of the apparatus as a whole establish a reference end surface 32, which is connected with the feeding device 23 opposite the autocollimating telescope 25. The reference end surface has a high Planernoye and mechanical resistance and easy to clean surface for easy removal of dirt before measurement. With the camera, not shown, which can be mounted directly on the reference end surface, the reference end surface can be oriented in a horizontal plane parallel to the wire pad 4.

The operation of the devices 10 and 20 according to the invention is carried out as follows. Now the La monocrystal 3, as shown in fig.5b, attach the platform 7 to the base plate 12 to cut through the stopper, not shown, in a given angular orientation with respect to the supporting plate 12 for sawing. When this angle is chosen so that the platform 7 is oriented in the azimuthal direction so that the crystallographic direction K is below a predefined angle ρ to the direction V supply, wherein deforming forces acting on the wire, almost cancel each other, so as to ensure the maximum possible feed rate. Then, as shown in figa, the monocrystal 3 together with the support plate 12 for sawing mounted on the holder 11 of the device to determine the orientation of the crystallographic plane relative to the end surface 2 of the single crystal by vacuum mechanism, not shown. The vacuum mechanism allows the single crystal 3 can be directly on the surface 11a of the holder 11. Then, the holder 11 is moved at a desired height position, so that the end surface 2 of the single crystal was localized in the focal plane of the x-ray goniometer. Then the mirror 17 is placed and fixed on the end surface 2 by means of the vacuum mechanism. Then make angular measurement surface is STI mirrors by autocollimating telescope 14, determining the deviation of the reflected ocular grid from ocular grid projected onto the surface of the mirror. Since the surface of the mirror 17 is oriented parallel to the end surface 2 of the single crystal 3 and the optical axis O autocollimating telescope 14 perpendicular to the surface 11a of the holder 11, which forms a reference end surface, with this measurement you can determine the amount of angular adjustment of the mirror surface or the end surface of the single crystal relative to the surface 11a of the holder 11.

Alternatively, the single crystal is measured without base plate for cutting, while the orientation of the platform in the x-ray device to determine, for example, by means of the stopper.

The desired crystallographic plane, e.g. the plane (100)is generally not parallel to the end surface 2 of the single crystal 3. In order to determine the direction of the crystallographic plane, measured Brighouse reflection through the x-ray goniometer 15, 16, which for this purpose is moved in a predefined angular range. The x-ray tube 15 and the detector 16 for this purpose have a known manner at a fixed angular distance from each other and move in an arc within a specified angular range. Brighouse reflection shows the angle, which is the first crystallographic plane forms with the surface 11a of the holder 11. Measurement of x-ray goniometer again, turning this monocrystal 90°. Using optical measurements and measurements of the x-ray goniometer get two vectors, x-ray measurements (x₁₀₀, y₁₀₀) and optical measurements (x_OF, y_OF) relative to the zero point of orientation. The difference between the two vectors gives the orientation of the crystallographic plane (100) in relation to the end surface 2 of the crystal, regardless of any systems external reference, such as a set of stripes, raised areas, locking chucks, etc. After a specified dimension known orientation of the crystallographic plane (100) relative to the end surface 2 of the single crystal. This gives the correction values for X-Y alignment of the wire saw to adjust desired their misorientation.

Then measure the position of the end surface 2 on chip wire saw 20 with identical autocollimating telescope 25 and identical plane mirror 27. Adjustment of the zero point device 24-X-Y-alignment in the coordinate system X_m, Y_mon the side of the machine in this case is performed using the reference end surface 23. In the production of inthe direction of Y_mi.e. in the feed direction, the adjustment of the OS is p only once, for example, with the device being configured to limit the depth of penetration of the cutting device. The definition of the zero point in the direction of X_mi.e. in the plane of the wire, is carried out at each change of the roller of the cutting wire. For this purpose the reference end surface 32 oriented horizontally on a wire platform with the camera that is attached to the reference end surface and which defines the X-position relative to the reference end surface of the wire platform.

To adjust the autocollimating telescope 25 the feed mechanism 23 is moved to the base position, i.e. the reference end surface 32 is disposed on the optical axis autocollimating telescope 25 and the mirror 27 is placed on the reference end surface and also measure the position of the autocollimating telescope. Then electronically carry out the comparison with the standard by using the reference end surface 32, and the mirror 27 draw on the reference end surface 32 with a vacuum mounting device. Then the mirror 27 is removed and the input device is moved to the loading position or orientation, and the single crystal 3 is connected with the supporting plate 12 for sawing. Then the mirror 27 is connected with the end surface 2 of the crystal and the measure of angle d is ulianovka end surface 2 using the autocollimating telescope 25. Then enter the correction values obtained on the basis of the measurement device 10, and carry out the adjustment of the horizontal and vertical position of the single crystal, so that the crystallographic plane had a predetermined angle with the ground wire. The mirror is removed and they cut.

Using the described method support azimuthal angular adjustment of a given crystallographic direction, and the operation can be performed at high flow rates compared with the prior art. Feed rate, for example, for cutting 6-inch GaAs single crystal, about four times higher compared to the traditional orientation in which it is impossible to properly adjust the azimuthal angular position.

When modifications take into account the required disorientation by setting plate wedge. In the further modification of the apparatus for cutting according to the invention, the single crystal can be rotated in the apparatus for cutting around its axis N₀shown in figure 1, which is perpendicular to the surface of the plate, in order to adjust the optimum angle to minimize cutting forces. Alternatively, you can also adjust the best angle to minimize cutting forces, tilting wire pad. In this case, predpochtitelno installing the measuring device, to measure the deviation of the cutting device during the cutting.

Instead deviations in the measuring device 10 can also be used contactless distance measurement systems to determine the orientation of the platform.

All errors due to adhesion or contamination of the brakes, the reference end surfaces, etc. are eliminated, since the measurement can be done directly in the apparatus 20 for wire sawing. The described device and method allows high-precision direct measurement on a wire saw without the safety risk. In addition, the angular dimension of the autocollimating method does not depend on the distance measurement, so that the autocollimating telescope 25 can be installed outside the space of the cut. In this case, when cutting, you can close the corresponding protective cap. Device X-Y-alignment provides vertical and horizontal adjustment component of their misorientation, so that the direction of rotation of the crystal can freely choose at any time and can be used as a variable adjustment in case of rejection of the wire.

The invention is not limited to apparatus for wire sawing, and can also be used, for example, in the apparatus for an internal circular cutting.

1. Apparatus for cutting single crystals containing device (4) cutting the La cutting plates from the essentially cylindrical single crystal (3), having a Central longitudinal axis (M), the device (24) of the guidance provided in the apparatus for orientation of the crystal relative to the cutting device, the input device (23) to move the crystal (3) in the direction (V) the filing essentially perpendicular to its Central longitudinal axis relative to the cutting device, characterized in that the device (24) orientation is designed so that a single crystal (3) can be rotated around the axis defined by the direction of flow, and the axis perpendicular to the plane which is defined by the Central longitudinal axis (M) and direction (V) supply, and that is provided with a holder (12) for the single crystal, by which the single crystal is set in a certain position in the apparatus for cutting so that a predetermined crystallographic direction (K) has a predetermined angle with respect to the feed direction, or the fact that provided with the rotating device to rotate the crystal around its longitudinal Central axis, and that preferably has a device for measuring the deflection of the cutting device during the cutting, which is connected with a torque device.

2. The apparatus according to claim 1, characterized in that the cutting device is designed in the form of a wire saw having multiple parallel Provo is OK (4) for cutting, which form the plane of the wires, and in that the device (24) orientation is designed in the form of device X-Y alignment, with which the single crystal can be moved in a plane parallel to the plane of the wires, and in the plane perpendicular to the plane of the wires.

3. The apparatus according to claim 1, characterized in that provided a device for measuring angles for measuring the orientation of the end surface (2) of the single crystal (3) relative to the plane of the wires.

4. The apparatus according to claim 3, characterized in that the device for measuring angles contains a mirror (27), which can be fixed on the end surface (2) of the single crystal (3), and autocollimating telescope (25), the optical axis (O) which is perpendicular to the plane of the cut.

5. The apparatus according to claim 4, characterized in that the mirror (27) can be attached to the end surface (2) of the single crystal using a vacuum device.

6. The apparatus according to claim 2, characterized in that provided the reference device (32, 25) for device X-Y alignment.

7. The apparatus according to claim 1, characterized in that the provided plate (28) of the optical wedge having a given wedge angle, for adjusting the deviation of the X-Y orientation of the single crystal from a predefined angle.

8. The apparatus according to claim 7, characterized in that the plate (28) of the optical wedge can be rotated in the cutting plane around a Central cont the through axis of the single crystal thus that can be adjusted a predetermined azimuthal orientation angle of the wedge.

9. The apparatus according to claim 1, characterized in that it is provided with a holder (12) for the single crystal, by which the single crystal is set in a certain position in the apparatus for cutting so that a predetermined outward sign of the single crystal is oriented in a predetermined position, rotated around the Central longitudinal axis (M).

10. The apparatus according to claim 1, further characterized by the presence of the device to determine the orientation of the crystallographic plane relative to the surface of the crystal, in this case, the device comprises a holder (11) of a single crystal (3), with which the single crystal (3) hold so that was opened its measured surface (2), the device (14, 17) for measuring angles for measuring the angle which the surface to be measured (2) has relative to the base axis of the holder, and an x-ray measuring device (15, 16) to determine the angle of the crystallographic plane relative to the base axis.

11. The apparatus according to claim 10, characterized in that the single crystal (3) is essentially cylindrical and the surface to be measured (2) is machined surface of the cylinder, and the holder (11) has a flat surface (11a)on which a single crystal (3) it is possible to fix the th end surface, the opposite of the measured surface, and the fact that the base axis is normal to the flat surface (11a).

12. The apparatus according to claim 10, characterized in that the device (14, 17) for measuring angles includes a mirror (17)based on the measured surface (2), and autocollimating telescope (14), the optical axis (O) coincides with the base axis.

13. The apparatus according to claim 10, characterized in that the x-ray measuring device constructed in the form of x-ray goniometer, which contains the x-ray tube (15) and a detector (16), which can jointly move within the angular range around the reference axis for measuring Brekhovskikh reflections for crystallographic plane.

14. The apparatus according to claim 10, characterized in that the holder (11) can be moved in the direction of the base axis.

15. The apparatus according to claim 10, characterized in that the holder (11) contains a vacuum suction device for fixation of a single crystal (3) using partial pressure or vacuum.

16. The apparatus according to claim 10, characterized in that the single crystal in the holder contains a stopper (13), with which the single crystal (3) can be fixed in a predetermined angular orientation in the plane perpendicular to the reference axis, while preferably the stopper (13) is present.

17. The method of cutting a single crystal in cutting m the bus, in which the plate is cut from a single crystal by moving the crystal in the direction (V) supply relative to the cutting device, comprising the steps, which determine the angle between the crystallographic plane and the outer surface (2) of the single crystal out of the cutting machine; measure the orientation of the external surface (2) of the single crystal and the cutting machine; set the crystal in a certain position based on the orientation of the outer surface so that this crystallographic plane to form a predetermined angle with the direction of flow, and they cut, and the determination of the angle between the crystallographic plane and the outer surface (2) of the single crystal includes the following steps: measure the angle that the surface of the crystal (2) forms with the base axis, using the autocollimating way to measure the angle of the crystallographic plane relative to the reference axis by x-ray goniometry and subtract the measured angles.

18. The method according to 17, characterized in that the angular position of a given crystallographic direction (K) of the single crystal in the plane of the cutting regulate so that during cutting of single crystal forces acting on the cutting device, were minimized.

19. Device in order to determine the possible orientation of the crystallographic plane relative to the surface of the crystal, containing the holder (11) of a single crystal (3), with which the single crystal (3) hold so that was opened its measured surface (2), the device (14, 17) for measuring angles for measuring the angle which the surface to be measured (2) has relative to the base axis of the holder, and an x-ray measuring device (15, 16) to determine the angle of the crystallographic plane relative to the base axis, the device (14, 17) for measuring angles includes a mirror (17)based on the measured surface (2), and autocollimating telescope (14), the optical axis (O) coincides with the base axis.

20. The device according to claim 19, characterized in that the single crystal (3) is essentially cylindrical and the surface to be measured (2) is machined surface of the cylinder, and the holder (11) has a flat surface (11a)on which a single crystal (3) it is possible to fix its end surface opposite to the measured surface, and the fact that the base axis is normal to the flat surface (11a).

21. The device according to claim 19, characterized in that the x-ray measuring device constructed in the form of x-ray goniometer, which contains the x-ray tube (15) and a detector (16), which can jointly move within the angular range around the reference axis to change the rhenium Brekhovskikh reflections for crystallographic plane.

22. The device according to claim 19, characterized in that the holder (11) can be moved in the direction of the base axis.

23. The device according to claim 19, characterized in that the holder (11) contains a vacuum suction device for fixation of a single crystal (3) using partial pressure or vacuum.

24. The device according to claim 19, characterized in that the single crystal in the holder contains a stopper (13), with which the single crystal (3) can be fixed in a predetermined angular orientation in the plane perpendicular to the reference axis, while preferably the stopper (13) is present.

25. The method of determining the orientation kristallograficheskoi plane with respect to the crystal surface, designed for use in the method of cutting a single crystal and includes the following steps: measure the angle that the surface of the crystal (2) forms with the base axis, using the autocollimating method using the autocollimating telescope (14), the optical axis (0) coincides with the base axis, measure the angle of the crystallographic plane relative to the reference axis by x-ray goniometry and subtract the measured angles.