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Light-emitting device and method to manufacture light-emitting device Group of inventions may be used in indicators, lighting fixtures, displays, sources of light to illuminate liquid-crystal displays. A light-emitting device according to the invention comprises a base and electric conductive components, placed a base, a light-emitting element, having a semiconductor layer and a transparent substrate; a reflecting component, not covering at least a part of side surfaces and an upper surface of the transparent substrate, and covering side surfaces of the semiconductor layer; and a light-transmission component, covering a part of the transparent substrate, not covered with a reflecting element, at the same time the light-emitting element is fixed on electroconductive components, besides, on the surface of these electroconductive components at least a part of the surface of electroconductive components, on which the light-emitting element is not fixed, is coated with an insulating filler with thickness of 5 mcm or more, which is a reflecting component, and the light-transmission component covers the light-emitting element. |
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Method to control chromaticity of light flux of white light diode and device for method realisation Invention relates to the field of lighting engineering and relates to a device to control chromaticity of a light flux of a white light diode. The device includes a light diode of white glow, a transparent substrate, an air medium between the white light diode and substrate, and also a diffuser. The transparent substrate is equipped with a facility to convert a spectral component of white light made in the form of luminophore particles placed on the surface or in the material of the transparent substrate. The diffuser is equipped with spatially-structured elements made in the volume or on the surface of the diffuser. The distance between the substrate and the light-emitting surface of the diffuser makes less than 50 mm. |
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White light-emitting diode based illumination device Invention relates to a white light-emitting diode (LED) based illumination device. The device includes blue, violet or ultraviolet LED chips and a luminescent coating which uses a luminescent material. The luminescent material is a combination (1), (2), (3) or (4) of a luminescent material A with a blue afterglow and a yellow luminescent material B. The yellow luminescent material B is capable of emitting light when excited with blue, violet or ultraviolet LED chips and/or luminescent material A with a blue afterglow. Combination (1) is a combination of 40 wt % Sr4Al14O25:Eu2+,Dy3+ and 60 wt % Y2O3·Al2O3·SiO2:Ce·B·Na·P, combination (2) is a combination of 5 wt % Sr2MgSi2O7:Eu2+,Dy3+ + 30 wt % Sr4Al14O25:Eu2+,Dy3+ + 15 wt % CaS:Bi3+,Na+ and 25 wt % Y2O3·Al2O3·SiO2:Ce·B·Na·P + 10 wt % Sr3SiO5:Eu2+,Dy3+ + 15 wt % Ca2MgSi2O7:Eu2+,Dy3+, combination (3) is a combination of 5 wt % Sr2MgSi2O7:Eu2+,Dy3+ + 15 wt % CaSrS:Bi3+ + 20 wt % Sr4Al14O25:Eu2+,Dy3+ and 15 wt % Sr3SiO5:Eu2+,Dy3+ + 20 wt % Ca2MgSi2O7:Eu2+,Dy3+ + 25 wt % Y3Al5O12:Ce, and combination (4) is a combination of 45 wt % Sr4Al14O25:Eu2+, Dy3+ and 55 wt % Y2O3·Al2O3·SiO2:Ce·B·Na·P. The LED chips emit blue light in case of combinations (1), (2), (3) and emit violet light in case of combination (4). The illumination device is driven by alternating current with frequency of not less than 50 Hz. |
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Light-emitting device using luminescent substances with oxyorthosilicate luminophores Light-emitting device includes a light-emitting diode and luminescent substances placed around the light-emitting diode to absorb at least part of the light emitted by the light-emitting diode and emit light having a different wavelength from that of the absorbed light. The luminescent substances contain Eu2+-doped silicate luminophores in which solid solutions in the form of mixed phases between alkali-earth metal oxyorthosilicates and rare-earth metal oxyorthosilicates are used as base lattices for the Eu2+ activation leading to luminescence. The luminescent substances are used as radiation converters to convert higher-energy primary radiation, for example, ultraviolet (UV) radiation or blue light, into longer-wave visible radiation and are therefore preferably used in corresponding light-emitting devices. |
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Control of edge emission in led matrix separated from unit Invention relates to semiconductor light sources. According to the invention, a production method of structures of light-emitting diodes (LEDs) on one plate that includes the following is proposed: formation of a plate of a device with LED matrixes; disconnection of LED matrixes on the plate of the device; separation of LED matrixes in order to create gaps between LED matrixes; application of a continuously reflecting coating onto LED matrix surface and in gaps between LED matrixes; removal of the first parts of the reflecting coating from LED matrix surface; and fracture or separation of the reflecting coating in gaps between LED matrixes; with that, the second parts of the reflecting coating remain on lateral sides of LED matrixes so that edge emission can be controlled. Besides, another version of the LED production method is proposed, in which the reflection coating is made from a thin metal film. |
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Extension of terminal pads to edge of chip with electrical insulation LED chips are made by forming LED layers, including a first conductivity type layer, a light-emitting layer and a second conductivity type layer. Channels are formed in the LED layers, which at least partially penetrate the first conductivity type layer. Electrical insulation regions are formed on or adjacent to at least portions of the first conductivity type layer along the edges of the chip. The first conductivity type terminal pad layer is formed to be in electrical contact with the first conductivity type layer and extends over separating tracks between the LED chips. The second conductivity type terminal pad layer is formed to be in electrical contact with the second conductivity type layer and extends over separating tracks between the LED chips and electrically insulated portions of first conductivity type layer. LED chips are mounted on chip holders and LED chips are separated along separating tracks between LED chips. |
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Boron-containing iii-nitride light-emitting device Invention relates to semiconductor light-emitting devices. The structure includes a III-nitride semiconductor structure comprising a light-emitting region located between an n-type region and a p-type region, wherein at least one layer in the light-emitting region is a Bx(InyGa1-y)1-xN light-emitting layer, 0.06≤x≤0.08 and 0.1≤y≤0.14, having a band gap energy and a bulk lattice constant corresponding to a lattice constant of a relaxed layer having the same composition as the Bx(InyGa1-y)1-xN light-emitting layer; an InGaN layer having the same band gap energy as the Bx(InyGa1-y)1-xN layer, has a bulk lattice constant corresponding to a lattice constant of a relaxed layer having the same composition as the InGaN layer; and the bulk lattice constant of the Bx(InyGa1-y)1-xN layer is less than the bulk lattice constant of the InGaN layer. |
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Method of screening high-power ingan/gan light-emitting diodes Method includes measuring spectral density of the low-frequency noise of each forward-biased light-emitting diode (LED) and current density in the range 0.1<J<10 A/cm2 before and after the process of ageing a LED for least 50 hours. Ageing is carried out at temperature of the p-n-junction in the range TJ=50-150°C, ambient temperature in the range Tb=25-120°C and current density through the forward-biased LED in the range J=35-100 A/cm2. LEDs with an operating life of less than 50000 hours are identified from the low-frequency noise spectral density thereof after the ageing process which is more than an order higher than values before the ageing process. |
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Lighting facility based on white light-emitting diodes and excited by pulse current Invention is related to a lighting facility based on white light-emitting diodes and excited by pulse current. The facility includes blue, violet and ultraviolet LED chips packed inside and a luminescent coating using a luminescent material. The luminescent material represents a combination (1) or (2) of the luminescent material A with blue afterglow and of a yellow luminescent material. The yellow luminescent material B is capable of light emission when blue, violet and ultraviolet LED chips and/or the luminescent material A with blue afterglow are excited. The combination (1) represents the following combination: 5% Sr2MgSi2O7:Eu2+,Dy3+ + 15% CaSrS:Bi3+ + 20% Sr4Al14O25:Eu2+,Dy3+ and 15% Sr3SiO5:Eu2+,Dy3+ + 20% Ca2MgSi2O7:Eu2+,Dy3+ + 25% Y3Al5O12:Ce, while the combination (2) is represented in the following way: 35% CaS:Br3+,Na+ and 25% Y2O3·Al2O3·SiO2:Ce·B·Na·P + 10 %CaS:Sm3+ + 15% Y2O2S:Mg,Ti + 5% Sr3SiO5:Eu2+,Dy3+ + 10% Ca2MgSi2O7:Eu2+,Dy3+. At that the lighting facility based on white light-emitting diodes excites the LED chips by pulse current with a frequency of at least 50 Hz. |
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Depositing phosphorus for light-emitting diode Invention relates to light-emitting diodes (LEDs). The invention discloses a method of sealing LEDs, wherein the method includes steps of determining the geometric shape for sealing; selecting enclosing material; depositing the enclosing material on a substrate for forming a boundary which defines space having the geometric shape, wherein said deposition includes depositing enclosing material by automatic spraying; and filling the space with sealing material for sealing. The invention also discloses a LED and a lamp based on the LED. |
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Invention can be used to emit light using light-emitting diodes (LED). The LED apparatus includes a metal substrate having a reflective surface, and a plurality of LED chips mounted directly to the reflective surface of the metal substrate to allow for heat dissipation, wherein at least some of the LED chips are spaced apart from each other to allow reflection of light from a portion of the reflective surface which is located between portions of the LED chips, as well as an electrical circuit formed by connecting LED chips to each other. |
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Invention relates to lighting engineering. The lighting device includes illumination devices (40) which at voltage supply emit primary radiation and solid particles (64, 66) which surround the illumination devices (40) at least by sections and interact with the primary radiation. Concentration of particles (64, 66) changes at least in one direction from the illumination devices (40) from the first concentration section up to the second one. |
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Led-based light source for light fixtures of sanitary grade Invention relates to lighting engineering. The light source consists of a printed circuit board dissipating heat, a LED array pack, a beam splitter and reflector. The LED array pack is fixed to the printed circuit board and covered by the beam splitter which, in its turn, is pressed to the reflector and positioned with it. The central light beams from the LED array pack are collimated by the beam splitter for the purpose of projection outside. Side light beams are refracted in the direction by the beam splitter, intercepted by the reflector and redirected to the target area of lighting together with the central beams. |
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Optical device and method of manufacture thereof Invention relates to optical devices and methods for manufacture thereof. Disclosed is an optical device having a light-emitting or a light-sensitive element mounted on a substrate and cured organosilicon material, integrated into a single article by sealing the element with an organosilicon compound which is cured via hydrosilylation, wherein the surface of the cured organosilicon material is treated with polyorganosiloxane which contains at least three hydrogen atoms bonded with silicon atoms in one molecule. A method of making said optical device is also disclosed. |
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Infrared radiation source (1) comprises a primary energy converter (2) with current-conducting contacts (3) and an active region (4) with optical thickness in the radiation output direction, which does not exceed double the value of the inverse of the mean absorption coefficient of the active region in the energy range of radiation quanta of the source (1). The active region (4) is made of at least one non-conducting liquid or gas, having absorption bands of radiation of the source. The primary energy converter (2) is made of piezoelectric material. The active region (4) and the primary energy converter (2) are placed in a sealed housing (5), at least part of which is transparent for radiation of the source (1). |
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Semiconductor light-emitting devices grown on composite wafers Method for manufacture of a semiconductor light-emitting device includes growing a variety of III-nitride semiconductor structures on the wafer, at that each semiconductor structure includes a light-emitting layer placed between n-type area and p-type area; the wafer includes a base, a variety of areas of III-nitride material divided by depressions, at that depressions cover the whole thickness of III-nitride material which forms the above structures; a binding layer placed between the base and the variety of areas of III-nitride material; herewith the light-emitting layer of each semiconductor structure has spacing parameter more than 3.19 Angstrom units; and forming of conductive material which connects electrically two of III-nitride semiconductor structures. The semiconductor light-emitting device is also suggested. |
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Led-base light emitting device Proposed device features a simplified adjustment of white light temperature. Note here that proposed device comprises multiple various-type light emitting units. Said units comprise LED elements emitting UV radiation or visible violet light. It comprises phosphors to absorb UV radiation or said visible violet light and to emit colour light. Note here that colour light from set units is mixed to become white light. LED element of said multiple units are identical and mounted on one bed. Note that two or more light emitting units partially overlap. |
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Method according to the invention involves arranging light-emitting elements in a closed field in repeating groups with virtual numbers of bunches within a group, first in forward order and then in reverse order. Series connection of light-emitting elements with like light-emitting elements within a group is carried out, for example, from the right-hand side, and between neighbouring groups on the left-hand side, with alternately adjacent conductors directed in parallel to the axis of the position of the light-emitting element in the closed field if the conductor is placed in the plane of the closed field. In case of multi-level connection of the light-emitting element under the plane of the light-emitting element of the conductor in insulating layers, the light-emitting element is connected by a connecting metal coating through the insulating layers with the corresponding conductor on the insulating layers situated on two virtual non-crossing lines on which, for example, on the left-hand side, connection with the light-emitting element is carried out within the group of light-emitting elements, and on the right-hand side between neighbouring groups in areas without conductors in previous insulating layers. The invention enables to find ways to arrange and connect bunches of light-emitting elements in an integrated circuit array thereof in order to increase density of arrangement, maintain emission of the light-emitting device when one or more bunches of the light-emitting array break down in manufacturing processes, inspection, classification, operation, and high yield of non-defective items. |
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Invention pertains to optical instrument-making. The LED device according to the invention includes one or more emitter chips arranged arbitrarily on a single flat substrate and coated with a common layer of a compound gel, optionally with phosphor crystals, and a plate made of optical material placed on the flat surface of the gel without an air space. On the inner side of the plate bordering with the gel, there are mutually perpendicular grooves whose faces are inclined to the surface of the gel at an angle α=55°…65°, and the depth of the grooves is not more than h=0.8 mm. The vertices of the grooves form squares, the length of the sides of which is D=(1.75…2.3)Dc, where Dc is the size of the side of the chip, wherein D=D0, where D0 is the distance between optical axes of the emitter chips, wherein optical axes of the squares of the incision and corresponding chips coincide. |
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Invention relates to optical instrument-making and specifically to a class of powerful LEDs used as alternatives to halogen lamps, as well as for overhead, industrial, facade and other illuminators. The LED device consists of one or more emitter chips arbitrarily arranged on a single flat substrate and coated with a common layer of a compound gel, optionally with phosphor crystals, wherein over each chip, the surface bordering with the air is spherical or aspherical with a radius at the peak of not more than 4 mm. The diameter of this surface D=(1.75…2.3)Dc, where Dc is the size of the emitting surface of the chip, wherein optical axes of said surfaces coincide, and the distance from the surface of the chip to the peak of the surface bordering with the air is not more than d=1.5 mm. The surface bordering with the air can have, over each chip around the entire periphery of the surface of the device, a limiting dimension D, wherein the height h and the width t of said device is not more than (0.1…0.15)D. The surface bordering with the air can be made on a plane-convex lens made of any optical material, including from organic glass, which is placed on the compound gel over the chip without an air space. |
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Light-emitting diode with moulded bi-directional optics Invention can be used for light applications other than backlights, where the vertical beam pattern (collimation pattern) and the side-light emission pattern can be substantially independently specified. A double-moulded lens for a LED includes an outer lens moulded around the periphery of a LED chip and a collimating inner lens moulded over the top surface of the LED chip and partially defined by a central opening in the outer lens. The outer lens is formed using silicone having a relatively low refraction index such as n=1.33-1.47, and the inner lens is formed from silicon with a higher refraction index, such as n=1.54-1.76, to cause total internal reflection within the inner lens. |
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LED unit, having a LED chip (10), a phosphor layer (12) and a filter layer (14), which is arranged such that light rays emitted from the LED chip (10), with a radiation angle less than a predetermined angle to the normal of the filter, are at least partially reflected, and light rays emitted from the LED chip higher than said predetermined angle to the normal of the filter layer (14) are transmitted. |
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Lighting device, display device and television receiver Invention relates to the field of lighting equipment. Lighting device (12) is equipped with a number of optical source cards (20) with variety of point optical sources (17) installed at them. Average colour tone of point optical sources (17) (POS) at each card (20) is in equivalent colour range defined by the square, and each opposite side of two square sides has coordinate length in the axis X equal to 0.015, and each opposite side of two square sides has coordinate length in the axis Y equal to 0.015 at the colour space chromaticity chart of International Commission on Illumination as of 1931. POS are categorized into three colour ranges defined by squares, at that each side of the square has a length of 0.015. At that the second and third ranges adjoin the first one that includes the above equivalent colour range. POS cards include the first cards with installed point optical sources in the first and second colour ranges, and the second cards with installed point optical sources in the first and third colour ranges. The first and second POS cards are placed in sequence. |
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Invention relates to light sources operating on the base of semiconductor light-emitting diodes. Heat radiator is made of a set of plates with or -shaped form that contact with each other by a flat horizontal part. Length of horizontal part of each plate is bigger than the previous one as they approach the light-emitting diode. Ends of plates are incurved to the side opposite to heat-removal base. Heat removal base is placed under heat radiator. According to the second version length of horizontal parts of radiator plates increases from the outermost plates to the medium ones and heat-removal base is placed under the heat radiator between ends of incurved plates. According to the third version heat-removal base is placed at butt end of the radiator between ends of incurved plates. |
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Composite fluorescent material for solid-state achromatic light sources Invention relates to light engineering and in particular to composite fluorescent materials used for solid-state achromatic light sources. According to the invention composite fluorescent material is suggested for solid-state achromatic light sources, which contain light-emitting diode that emits within range of 430-480 nm and a mixture of at least two luminophores; the first luminophore has cadmium-orange light emission within the range of 560-630 nm while the second one is taken from aluminate group of earth metals activated with europium. At that at least one light-accumulating luminophore having long-term afterglow, which practically unexcited by primary emission of the light-emitting diode is used as the second luminophore. Mass ratio of cadmium-orange luminophore and light-accumulating luminophore is the following: cadmium-orange luminophore is 10-90%, light-accumulating luminophore is 10-90%. |
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Luminescent ceramic converter and method of its production Invention relates to production of luminescent ceramic converter. Proposed method comprises the steps that follow. (a) Integration of precursor material with ore-forming admixture to get raw mix. Note here that ore-forming admixture comprises, in fact, spherical particles of carbon or organic material. (b) Moulding raw mix to make raw billet of ceramic converter. (c) Heating of raw billet to remove ore-forming admixture and to form pre-calcined ceramic material with, in fact, spherical pores. (d) Sintering of pre-calcined ceramic material to form luminescent ceramic converter. Proposed luminescent ceramic converter comprises sintered monolithic ceramic material converting light with first wavelength in light with second wavelength. Ceramic material has, in fact, spherical pores with mean size of 0.5-10 mcm. |
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Circuit board, manufacturing method of card, display panel and display device Invention is referred to circuit board with enhanced corrosion resistance, manufacturing method of the card, display panel and display device. Active matrix underlay (20) contains glass substrate (21); metal conductor (22) made at glass substrate (21); insulating film (24) of the gate covering metal conductor (22); interlayer insulating film (29) covering (24) insulating film (24) of the gate; and transparent electrode (33) shaped at interlayer insulating film (29). Conductor (22) contains contact area (55) where transparent electrode (33) is applied directly to conductor (22). Transparent electrode (33) passes over the contact area (55) so that it covers end surface (29a) of interlayer insulating film (29) faced to contact area (55) and end surface (24a) of insulating film (24) of the gate faced to contact area (55). |
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Light-emitting device and method of making said device Method of making a light-emitting device includes a step of connecting a cover 3, having a frame part 4, with a housing 1, having a light-emitting element 2 which is fitted in the depression of the housing 1 in order to close the opening of the depression. At the connection step, a metal coupling agent 31, having better wettability with respect to the frame part 4 than with respect to the housing, is partially deposited on the housing 1 or the frame part 4, and is spread along the frame part 4 and connected, wherein the space is defined by the region of connection where the metal coupling element is connected, and the housing 1 and the frame part 4 are connected. |
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Light-emitting diode module and method for manufacture thereof Method of making a light-emitting diode (LED) module according to the invention involves forming an insulating film on a substrate; forming, on the insulating film, a first earthing terminal pad and a second earthing terminal pad separate from each other; forming a first separating film which fills the space between the first and second earthing terminal pads, a second separating film which is deposited on the surface of the first earthing terminal pad and a third separating film which is deposited on the surface of the second earthing terminal pad; forming a first separating layer of given height on each of the separating films; sputtering seed metal on the substrate on which the first separating layer is formed; forming a second separating layer of given height on the first separating layer; forming a first mirror which is connected to the first earthing terminal pad, and a second mirror which is connected to the second earthing terminal pad by applying a metal coating on the substrate on which the second separating layer is formed; removing the first and second separating layers; connecting a stabilitron to the first mirror and connecting a LED to the second mirror; and depositing a fluorescent substance to fill the space formed by the first mirror and the second mirror. The invention also discloses another version of the method described above and the design of the LED module. |
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Light-emitting device (100) according to the invention has a light emitter (101) situated on a substrate (102) and a reflecting optical housing (103, 108) surrounding said light emitter (101). The space (106) between said reflecting optical housing (103, 108) and said light emitter (101) is filled with a suspension of reflecting material (104). The light-emitting device further includes at least one channel (105) which is suitable for use of said reflecting material (104). Also disclosed is a method of making the light-emitting device described above. |
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Globular light-emitting-diode lamp and its manufacturing method Globular light-emitting-diode lamp (10) has clear bulb (14) and base (12) for connection to lamp socket. Before insertion of bulb (14) neck in section (16) by means of base (12) wrapping with expanding band (38) from foam material of Compriband type or similar, self-levelling of base (12) in bulb neck (16) may be achieved. In addition bars (36) of soft metal may be wrapped around band (38) before band (38) wrapping around base (12). Band (38) serves as air cushion, which presses metal bars (36) to base (12) and bulb (14). |
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Light-emitting diode with optical element Invention relates to lighting engineering and specifically to LED-based semiconductor light sources. The LED has at least one light-emitting crystal with an ultra-narrow beam pattern, which is placed in a housing made of optically transparent material, the light-outputting surface of which is spherical, wherein the size of the sphere and the height of the optical element are linked by a certain relationship which depends on the angle of divergence of radiation flux of the LED, the height of the optical element, the radius of the sphere of the optical element, the angular dimension of the beam pattern of the light flux of the emitting crystal and the refraction index of the material of the optical element. |
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Method of making light-emitting diode Antireflection optical coating of SiO2 is deposited on a light-emitting GaN-n or GaN-p surface and a microrelief is formed in said coating in form of nano-spikes with density of 107-108 items/cm2. The present method enables to form a microrelief light-diffusing, light-emitting surface on both an n-type and p-type GaN without deterioration of heterostructure parameters. |
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Semiconductor electroluminescent emitter Semiconductor electroluminescent emitter includes a semiconductor light-emitting crystal connected to a power supply, which generates light flux when supply current flows through it, wherein the crystal used emits light in at least two different spectral ranges with ratio of radiation intensities of different spectral ranges controlled by varying power supply parameters. The invention employs a power supply which is equipped with a circuit for pulse amplitude-width modulation of the supply current, which changes the amplitude and duration of supply current pulses while keeping the luminous intensity of light generated by the crystal constant. |
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Led with controlled angular non-uniformity Light source which uses a light-emitting diode with a wavelength converting element is configured to produce a non-uniform angular colour distribution which can be used with a specific optical device which transforms the angular colour distribution into a uniform colour distribution. The ratio of height and width for the wavelength converting element is selected to produce the desired non-uniform angular colour distribution. |
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Backlight device, display device and television receiver Backlight unit (49) of a display device (69), having a liquid crystal display panel (59), has a base (41), a diffusing plate (43) which is supported by the base, and a point light source for irradiating the diffusing plate with light. The point light source has a light-emitting diode (22) mounted on a mounting substrate (21). A plurality of light-emitting diodes covered by divergent lenses (24) are provided. Optical axes (OA) of the divergent lenses are inclined relative the diffusing plate, and the divergent lenses, having different inclinations of optical axes, are placed randomly on the base. The divergent lenses, having optical axes that are inclined in opposite directions, are paired and the pairs are arranged in a matrix. |
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Optical module of light diode lamp Working surface of a generating optical system, through which light diode emission is released, represents in the general case an asymmetric aspherical surface. The optical module according to the invention comprises a light diode (a light diode crystal) and an adjoining generating optical system (GOS), through which light diode emission is released. The working light-releasing surface of the GOS represents an asymmetric aspherical surface, at the same time the shape of the working surface of the GOS is determined from the solution of the suggested system of equations. |
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Method of making semiconductor radiator Obtained semiconductor radiators are designed for use in medical diagnosis equipment, environmental equipment for monitoring gaseous media, fibre-optic sensors for pressure, temperature, vibration and chemical analysis of substances, liquid and gas flow rate, in communication systems and control and measuring equipment. The method involves making a semiconductor radiator in which an end face opposite the output end of an active element is connected to an external spectrum-selective reflector based on a Bragg crystal lattice, having a series of alternating parallel layers of two types of semiconductor materials. The radiator can be superluminescent, laser single-element, multielement. |
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Disclosed is a light source having a LED chip and a luminescent wavelength converter mounted side by side on a base. The LED chip is configured to emit excitation light in a first wavelength range, and the luminescent wavelength converter is configured to convert excitation light into converted light in a second wavelength range; a reflector with a built-in absorbing layer. The reflector is configured to transmit converted light from the luminescent wavelength converter, wherein the built-in absorbing layer is configured to reduce transmission by the reflector of any excitation light incident on the reflector at essentially oblique angles; and a separate hemispherical absorber, placed around the luminescent wavelength converter such that converted light from the luminescent wavelength converter passes through the separate hemispherical absorber at a normal angle of incidence, and excitation light transmitted through the reflector passes through the separate hemispherical absorber at an oblique angle. A light-emitting diode (LED) module is also disclosed. |
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Coated light-emitting device and method of coating said device Light-emitting device (1) has a light-emitting diode (2) placed on a mounting substrate (3), said device having a lateral peripheral surface (6) and a top surface (8), and an optically active coating layer (7). Said coating layer (7) covers at least a part of said peripheral surface (6), extending from the mounting substrate (3) to said top surface (8), and essentially not covering the top surface (8). At least part of said lateral peripheral surface is pretreated to become either polar or non-polar. The coating composition used to form at least part of said coating layer is either polar or non-polar. Also disclosed are a method of making said device and an array of light-emitting devices consisting of said light-emitting devices. |
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Structure for generating sub-terahertz and terahertz range electromagnetic radiation Heterojunction structure according to the invention is a plurality of alternating pairs of narrow-bandgap (GaAs or GaN) and wide-bandgap (respectively, Ga1-x Alx As or Ga1-xAlxN) semiconductor layers. The thickness of the alternating narrow-bandgap and wide-bandgap layers is selected to be identical in the 30…100 nm range; the narrow-bandgap GaAs and GaN layers of the multilayer heterostructure are doped with donors to concentration of 5·1017…1·1018 cm-3 and the wide-bandgap Ga1-xAlxAs and Ga1-xAlxN layers are not doped; the number of periods of pairs of alternating GaAs and Ga1-x Alx As (and, respectively, GaN and Ga1-xAlxN) layers of the multilayer heterostructure is selected from three to several tens; the molar ratio of aluminium arsenide for all gallium arsenide - aluminium arsenide layers is selected in the range of 0.20…0.35, and the molar ratio of aluminium nitride for all gallium nitride - aluminium nitride layers is selected in the range of 0.35…0.65; wherein in the Ga1-x Alx As (for the GaAs-AlAs system) layer and in the Ga1-xAlxN (for the GaN-AIN system) layer from the pair furthest from the substrate, the molar ratio of aluminium arsenide (respectively, aluminium nitride) is low and is about 0.7·X, and the layer itself is coated with a thicker (not more than 150 nm) doped GaAs (respectively, GaN) layer. A version of the disclosed structure can be a structure in which in a layer of a solid solution from the pair closest to the substrate, the molar ratio of aluminium arsenide (respectively, aluminium nitride) is (0.65…0.75)·X. |
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Lighting device, display device and television set Lighting device 12 comprises multiple point sources 17 of light and a base 14, where point sources of light 17 are placed, which are classified into two or more colour ranges A, B and C, in accordance with light colours. Each colour range is defined by means of a square, each side of which has length equal to 0.01 in the colour schedule of light space of the International Lighting Commission 1931. |
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Process of forming spacer for flip led Method of making a light-emitting device according to the invention comprises the following steps: providing a light-emitting diode (LED) chip on a support (22), with a gap between the LED chip and the support, wherein the LED chip has a bottom surface facing the support and a top surface opposite the bottom surface; forming spacer material (54) on top of the LED chip such that the spacer material seals the LED chip and substantially completely fills the gap between the LED chip and the support, and removing the spacer material (54) at least from the top surface of the LED chip. The LED chip has epitaxial layers (10) that are grown on a growth substrate, wherein the surface of the growth substrate is the top surface of the LED chip. The method further includes a step of removing the growth substrate from the epitaxial layers after forming the spacer material (54) on top of the LED chip. Also disclosed is an intermediate method of making a light-emitting device, a light-emitting device before singulation, a light-emitting device having a flip chip. |
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Dendronised polyaryl silane-based organic light-emitting diodes Invention relates to organic light-emitting diode (OLED) solid-state light sources used to make colour information screens and colour display devices with high consumer properties, as well as cheap and efficient light sources. Disclosed is an OLED, having a base in form of a transparent substrate having a transparent anode layer and a metal cathode layer with a light-emitting layer in between, which is based on a dendronised polyaryl silane of general formula (I) or (II) , where n is an integer from 5 to 1000. |
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Method comprises steps of: providing a substrate having at least one light-emitting diode (LED) and installing a collimator at least partially surrounding said at least one LED on one side, and formed by at least one self-supporting wall element made of material with thickness of 100-500 mcm. Said collimator is connected to said at least one LED and said substrate using a transmitting binding material. Also disclosed is a device made according to the described method. |
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Disclosed is a yellow afterglow material having the chemical formula aY2O3·bAl2O3·cSiO2:mCe·nB·xNa·yP, where a. b. c. m, n. x and y are coefficients, where a is not less than 1 but not greater than 2, b not less than 2 but not greater than 3, c is not less than 0.001 but not greater than 1, m is not less than 0.0001 but not greater than 0.6, n is not less than 0.0001 but not greater than 0.5, x is not less than 0.0001 but not greater than 0.2, and y is not less than 0.0001 but not greater than 0.5, wherein Y, Al and Si are basic elements and Ce, B, Na and P are activators. Also disclosed is a method of producing the disclosed material and a light-emitting diode device using said material. |
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Luminescent composite material and light-emitting device based thereon Luminescent composite material contains a polymer base 1 made of an optically transparent polymer material and a phosphor-containing multilayer polymer film consisting of three layers: optically transparent polymer film 2; polymer composition 3, including an inorganic phosphor - cerium-doped yttrium-aluminium garnet, or cerium-doped gallium-gadolinium garnet; polymer composition 4 with dispersed semiconductor nanocrystals made of a semiconductor nucleus, first and second semiconductor layers, and emitting a fluorescent signal with fluorescence peaks in the wavelength range of 580-650 nm. Layers of the multilayer polymer film can also be arranged in the following order: polymer composition 3 containing a phosphor, polymer composition 4 with dispersed semiconductor nanocrystals, optically transparent polymer film 2. The light-emitting device contains a luminescent composite material situated away from a light source. The light source is in form of a light-emitting diode with radiation wavelength of 430-470 nm. The light-emitting devices have service life longer than 50000 h, luminous efficacy higher than 100 lm/W and correlated colour temperature of 2500-5000 K. |
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Luminescent polycarbonate film for white light-emitting diodes and detectors Disclosed is a flexible (self supporting) polycarbonate film filled with inorganic phosphors made from solid solutions of aluminates and silicates of rare-earth elements. The film is formed by moulding from a solution of a suspension of a polycarbonate and phosphor in chlorinated aliphatic solvents and contains 10-14 wt % polycarbonate, 4-8 wt % inorganic phosphor with a garnet structure, 0.08-0.8% plasticiser based on an acrylonitrile-styrene composition, 0.5-2% polyoxy monooleate surfactant and a solvent based on chlorinated aliphatic solvents selected from methylene chloride and/or chloroform, bringing its composition to 100%. |
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White light optical transistor White light optical transistor is a semiconductor device designed to emit optical radiation based on a transistor structure with an alternating conductivity type, which forms an active region which generates a blue light. The optical transistor has a housing accommodating a chip with series-connected region with a first conductivity type, which is the emitter, a region with a second conductivity type, which is the base, and a second region with a first conductivity type, which is the collector. Each of the regions has an ohmic contact outside the housing, wherein the chip with the emitter with a reduced thickness, connected through the base to the collector, is placed in an optically transparent compound, in the top part of which a phosphor is implanted. |
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Tetracyano-substituted 1,4,9b-triazaphenalenes and method for production thereof Described are novel polycyclic nitrogen-containing heteroaromatic compounds - tetracyano-substituted 1,4,9b-triazaphenalenes of general formula 1 |
Another patent 2513253.