Semiconductor electroluminescent emitter. RU patent 2504048.
 Led with controlled angular non-uniformity / 2504047Light source which uses a light-emitting diode with a wavelength converting element is configured to produce a non-uniform angular colour distribution which can be used with a specific optical device which transforms the angular colour distribution into a uniform colour distribution. The ratio of height and width for the wavelength converting element is selected to produce the desired non-uniform angular colour distribution. |
 Backlight device, display device and television receiver / 2503881Backlight unit (49) of a display device (69), having a liquid crystal display panel (59), has a base (41), a diffusing plate (43) which is supported by the base, and a point light source for irradiating the diffusing plate with light. The point light source has a light-emitting diode (22) mounted on a mounting substrate (21). A plurality of light-emitting diodes covered by divergent lenses (24) are provided. Optical axes (OA) of the divergent lenses are inclined relative the diffusing plate, and the divergent lenses, having different inclinations of optical axes, are placed randomly on the base. The divergent lenses, having optical axes that are inclined in opposite directions, are paired and the pairs are arranged in a matrix. |
 Optical module of light diode lamp / 2503095Working surface of a generating optical system, through which light diode emission is released, represents in the general case an asymmetric aspherical surface. The optical module according to the invention comprises a light diode (a light diode crystal) and an adjoining generating optical system (GOS), through which light diode emission is released. The working light-releasing surface of the GOS represents an asymmetric aspherical surface, at the same time the shape of the working surface of the GOS is determined from the solution of the suggested system of equations. |
 Method of making semiconductor radiator / 2503094Obtained semiconductor radiators are designed for use in medical diagnosis equipment, environmental equipment for monitoring gaseous media, fibre-optic sensors for pressure, temperature, vibration and chemical analysis of substances, liquid and gas flow rate, in communication systems and control and measuring equipment. The method involves making a semiconductor radiator in which an end face opposite the output end of an active element is connected to an external spectrum-selective reflector based on a Bragg crystal lattice, having a series of alternating parallel layers of two types of semiconductor materials. The radiator can be superluminescent, laser single-element, multielement. |
 Led module / 2503093Disclosed is a light source having a LED chip and a luminescent wavelength converter mounted side by side on a base. The LED chip is configured to emit excitation light in a first wavelength range, and the luminescent wavelength converter is configured to convert excitation light into converted light in a second wavelength range; a reflector with a built-in absorbing layer. The reflector is configured to transmit converted light from the luminescent wavelength converter, wherein the built-in absorbing layer is configured to reduce transmission by the reflector of any excitation light incident on the reflector at essentially oblique angles; and a separate hemispherical absorber, placed around the luminescent wavelength converter such that converted light from the luminescent wavelength converter passes through the separate hemispherical absorber at a normal angle of incidence, and excitation light transmitted through the reflector passes through the separate hemispherical absorber at an oblique angle. A light-emitting diode (LED) module is also disclosed. |
 Coated light-emitting device and method of coating said device / 2503092Light-emitting device (1) has a light-emitting diode (2) placed on a mounting substrate (3), said device having a lateral peripheral surface (6) and a top surface (8), and an optically active coating layer (7). Said coating layer (7) covers at least a part of said peripheral surface (6), extending from the mounting substrate (3) to said top surface (8), and essentially not covering the top surface (8). At least part of said lateral peripheral surface is pretreated to become either polar or non-polar. The coating composition used to form at least part of said coating layer is either polar or non-polar. Also disclosed are a method of making said device and an array of light-emitting devices consisting of said light-emitting devices. |
 Structure for generating sub-terahertz and terahertz range electromagnetic radiation / 2503091Heterojunction structure according to the invention is a plurality of alternating pairs of narrow-bandgap (GaAs or GaN) and wide-bandgap (respectively, Ga1-x Alx As or Ga1-xAlxN) semiconductor layers. The thickness of the alternating narrow-bandgap and wide-bandgap layers is selected to be identical in the 30…100 nm range; the narrow-bandgap GaAs and GaN layers of the multilayer heterostructure are doped with donors to concentration of 5·1017…1·1018 cm-3 and the wide-bandgap Ga1-xAlxAs and Ga1-xAlxN layers are not doped; the number of periods of pairs of alternating GaAs and Ga1-x Alx As (and, respectively, GaN and Ga1-xAlxN) layers of the multilayer heterostructure is selected from three to several tens; the molar ratio of aluminium arsenide for all gallium arsenide - aluminium arsenide layers is selected in the range of 0.20…0.35, and the molar ratio of aluminium nitride for all gallium nitride - aluminium nitride layers is selected in the range of 0.35…0.65; wherein in the Ga1-x Alx As (for the GaAs-AlAs system) layer and in the Ga1-xAlxN (for the GaN-AIN system) layer from the pair furthest from the substrate, the molar ratio of aluminium arsenide (respectively, aluminium nitride) is low and is about 0.7·X, and the layer itself is coated with a thicker (not more than 150 nm) doped GaAs (respectively, GaN) layer. A version of the disclosed structure can be a structure in which in a layer of a solid solution from the pair closest to the substrate, the molar ratio of aluminium arsenide (respectively, aluminium nitride) is (0.65…0.75)·X. |
 Lighting device, display device and television set / 2502916Lighting device 12 comprises multiple point sources 17 of light and a base 14, where point sources of light 17 are placed, which are classified into two or more colour ranges A, B and C, in accordance with light colours. Each colour range is defined by means of a square, each side of which has length equal to 0.01 in the colour schedule of light space of the International Lighting Commission 1931. |
 Process of forming spacer for flip led / 2502157Method of making a light-emitting device according to the invention comprises the following steps: providing a light-emitting diode (LED) chip on a support (22), with a gap between the LED chip and the support, wherein the LED chip has a bottom surface facing the support and a top surface opposite the bottom surface; forming spacer material (54) on top of the LED chip such that the spacer material seals the LED chip and substantially completely fills the gap between the LED chip and the support, and removing the spacer material (54) at least from the top surface of the LED chip. The LED chip has epitaxial layers (10) that are grown on a growth substrate, wherein the surface of the growth substrate is the top surface of the LED chip. The method further includes a step of removing the growth substrate from the epitaxial layers after forming the spacer material (54) on top of the LED chip. Also disclosed is an intermediate method of making a light-emitting device, a light-emitting device before singulation, a light-emitting device having a flip chip. |
 Dendronised polyaryl silane-based organic light-emitting diodes / 2501123Invention relates to organic light-emitting diode (OLED) solid-state light sources used to make colour information screens and colour display devices with high consumer properties, as well as cheap and efficient light sources. Disclosed is an OLED, having a base in form of a transparent substrate having a transparent anode layer and a metal cathode layer with a light-emitting layer in between, which is based on a dendronised polyaryl silane of general formula (I) or (II) , where n is an integer from 5 to 1000. |
 Heavy-power light-emitting diode / 2247444Proposed light-emitting diode based on nitride compounds of group III metals, that is aluminum, gallium, and indium (AIIIN), includes p-n junction epitaxial structure disposed on insulating substrate and incorporating n and p layers based on solid solutions of group III nitrides AlxInyGa1 - (x + y)N, (0 ≤ x ≤ 1, 0 ≤ y ≤ 1), as well as metal contact pads for n and p layers disposed on side of epitaxial layers, respectively, at level of lower epitaxial n layer and at level of upper epitaxial p layer. Projections of light-emitting diode on horizontal sectional plane, areas occupied by metal contact pad for n layer, and areas occupied by metal contact pad for p layer are disposed on sectional plane of light-emitting diode in alternating regions. Metal contact pad for n layer has portions in the form of separate fragments disposed in depressions etched in epitaxial structure down to n layer; areas occupied by mentioned fragments in projection of light-emitting diode onto horizontal sectional plane are surrounded on all sides with area occupied by metal contact pad for p layer; fragments of metal contact pad for n layer are connected by means of metal buses running over metal contact pad insulating material layer applied to portions of this contact pad over which metal buses are running. |
 Light source with light-emitting component / 2251761Proposed light source emitting light in ultraviolet or blue light region (from 370 to 490 nm) and capable of producing high-efficiency white light affording control of luminance temperature within comprehensive range has light-emitting component that emits light in first spectral region and phosphor of group of optosilicate alkali-earth metals and that absorbs part of source light and emits light in other spectral region. Novelty is that phosphor used for the purpose is, essentially, europium activated bivalent optosilicate of alkali-earth metal of following composition: (2-x-y)SrO · x(Bau, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+ and/or (2-x-y)BaO · x(Sru, Cav)O · (1-a-b-c-d)SiO2 ·aP2O5bAl2O3cB2O3dGeO2 : yEu2+. |
 Photoluminescent semiconductor materials / 2255326Porous-structured semiconductor materials are modified by recognition element and exposing to electromagnetic radiation carries out photoluminescence reaction. Recognition elements that can be chosen from bio-molecular, organic and non-organic components interact with target to be subject to analysis. As a result, the modulated photoluminescence reaction arises. |
 Light-emitting diode device / 2258979Proposed device that can be used, for instance, in railway light signals built around light-emitting diodes has one or more photodetectors and set of optical filters additionally disposed on substrate. Each photodetector has its p region connected to its respective wire lead through contact pad; wire lead is passed through substrate hole and insulated from the latter; its n region is connected to its respective wire lead by means of conductor provided with metal or metal-plated contact made in the form of ring segment, all segments being integrated into ring by means of insulating inserts. Set of optical filters having similar or different spectral filtering characteristics is formed by parts of hollow inverted truncated cone whose quantity equals that of photodetectors; all parts are integrated through insulating gaskets into single hollow inverted truncated cone. Disposed on butt-ends of hollow inverted truncated cone are dielectric rings of which upper one has inner diameter equal to that of large base of truncated cone and outer diameter, to that of substrate. Dielectric ring has holes over its circumference for electrical connection of photodetector conductors and light-emitting chips to contacts in the form of ring segments. |
 Semiconductor source of infrared radiation / 2261501Device has emitting surface, recombination area, not less than one passive layer, transparent for emission with hv energy, at least one of layers is made with n-type of conductivity and at least one of said layers is positioned between recombination area and emitting surface, not less than one heat-draining surface and node for connection to outer energy source. Concentration of free carriers (n) and width of forbidden zone (E1) in aforementioned passive layer match relations: where hv and Δhv0.5 - quant energy and half-width of spectrum of emission, formed in recombination zone, respectively, eV, and ndeg - concentration of carriers, at which degeneration of conductivity zone starts, cm-3. |
 Photo-luminescent emitter, semiconductor element and optron based on said devices / 2261502Emitter has electro-luminescent diode of gallium arsenide, generating primary emission in wave length range 0,8-0,9 mcm, and also poly-crystal layer of lead selenide, absorbing primary emission and secondarily emitting in wave length range 2-5 mcm, and lead selenide includes additionally: admixture, directionally changing emission maximum wave length position as well as time of increase and decrease of emission pulse, and admixture, increasing power of emission. Photo-element includes lead selenide layer on dielectric substrate with potential barrier formed therein, and includes admixtures, analogical to those added to lead selenide of emitter. Optron uses emitter and photo-elements. Concentration of addition of cadmium selenide in poly-crystal layer of emitter is 3,5-4,5 times greater, than in photo-element. Open optical channel of Optron is best made with possible filling by gas or liquid, and for optimal synchronization and compactness emitter and/or photo-element can be improved by narrowband optical interference filters. |
 Semiconductor element emitting light in ultraviolet range / 2262155Proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 280 -200 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material, active layer with one or more quantum wells made of nitride material, barrier layer made of Mg doped AlXGaI-XN, and p contact layer made of Mg doped nitride material; used as nitride material for n contact layer is AlyGaI-yN in which 0.25 ≤ V ≤ 0.65; used as nitride material of active layer is AlZGaI ZN, where V - 0.08 ≤ Z ≤ V - 0.15; in barrier layer 0.3 ≤ X ≤ 1; used as nitride material in p contact layer is AlwGa1 - wN, where V ≤ W ≤ 0.7; active layer is doped with Si whose concentration is minimum 1019 cm-3; width "d" of active layer quantum wells is 1 ≤ d ≤ 4 nm; molar fraction of Al on barrier layer surface next to active layer is 0.6 to 1 and further reduces through barrier layer width to its boundary with p contact layer with gradient of 0.02 to 0.06 by 1 nm of barrier layer thickness, barrier layer width "b" ranging within 10≤ b ≤ 30 nm. |
 Semiconductor element emitting light in ultraviolet range / 2262156Proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of AIIIBV type and is characterized in ultraviolet emission range extended to 240 -300 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material AlXIInX2GaI-XI-X2N, active layer made of nitride material AlVIInY2GaI-YI-Y2N, and p contact layer made of Mg doped nitride material AlZIInZ2GaI-ZI-Z2N; active layer is divided into two areas; area abutting against contact layer is doped with Si and has n polarity of conductivity; other area of active layer is doped with Mg and has p polarity of conductivity; molar fraction of Al (YI) in p area of active layer is continuously and monotonously reducing between its boundary with n contact layer and boundary with p area of contact layer and is within the range of 0.1 ≤ VI ≤ 1; difference in VI values at boundaries of active-layer n area is minimum 0.04 and width of forbidden gap in active-layer p area at its boundary with active-layer n area exceeds by minimum 0.1 eV the maximal width of n area forbidden gap. |
 Light-emitting diode incorporating optical component / 2265916Proposed light-emitting diode has chip covered with optical component made of translucent material whose outer surface is of aspherical shape obtained due to rotation of f(x) curve constructed considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode; it is light-emitting surface. Curve f(x) in coordinate system whose origin point coincides with geometric center of light-emitting chip active area has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode; used as this size is desired height of optical component or its desired diameter; active area is formed by plurality of points Ai (i = 1, 2..., n). Taken as coordinates of each point are coordinates of intersection point of straight line coming from coordinate origin point at angle αini to ordinate axis and straight line coming from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light emitting chip and chosen between angles 0 and 90 deg.; angle Gi is found from given dependence. |
 Light-emitting diode incorporating optical component / 2265917Proposed light-emitting diode has light-emitting chip covered by optical component made of translucent material whose outer surface is aspherical in shape due to rotation of curve f(x) built considering optical properties of light-emitting chip and optical component material about symmetry axis of light-emitting diode. This surface emits light and f(x) curve in coordinate system whose origin coincides with geometric center of active area of light-emitting diode has initial point A0 disposed on ordinate axis at distance corresponding to characteristic size of light-emitting diode which is, essentially, optical component height or its desired diameter, and is formed by plurality of points A, (i = 1, 2... n); coordinates of intersection point of straight line drawn from coordinate origin point at angle αini to ordinate axis drawn from preceding point Ai - 1 at angle Gi to abscissa axis drawn to point Ai - 1 are taken as coordinates of each of them;; αini is angle of propagation of iin light beam pertaining to plurality of beams emitted by light-emitting chip chosen between 0 and 90 deg. Angle Gi is found from given dependence. Angle αouti is found by pre-construction of directivity pattern DPin of beam emitted by light-emitting chip. Coordinates of A points are checked by means of light-emitting diode simulator that has optical component whose outline is formed by plurality of Ai points as well as light-emitting chip whose beam directivity pattern is DPin; this chip is used as distributed light source having three-dimensional emitting area whose size and appearance correspond to those of emitting area used in light-emitting diode of light-emitting chip. Light emitting points in light-emitting chip of simulator under discussion are offset relative to origin of coordinates within its emitting area; coordinates of Ai points are checked by comparing directivity pattern DPout and directivity pattern DPsim of beam emitted by light-emitting diode simulator, both displayed in same coordinate system. When these directivity patterns coincide, coordinates of points Ai function as coordinates of points forming curve f(x); if otherwise, coordinates of points Ai are found again, and DPoutj is given as directivity pattern DPout whose points are disposed above or below the latter, respectively, depending on disposition of directivity pattern DPsim below or above directivity pattern DPout in the course of check. |
FIELD: physics.
SUBSTANCE: semiconductor electroluminescent emitter includes a semiconductor light-emitting crystal connected to a power supply, which generates light flux when supply current flows through it, wherein the crystal used emits light in at least two different spectral ranges with ratio of radiation intensities of different spectral ranges controlled by varying power supply parameters. The invention employs a power supply which is equipped with a circuit for pulse amplitude-width modulation of the supply current, which changes the amplitude and duration of supply current pulses while keeping the luminous intensity of light generated by the crystal constant.
EFFECT: more comfortable visual perception of light generated by an emitter with variable colour characteristics.
2 cl
The invention refers to the lighting engineering, namely, to the semiconductor an electroluminescent emitters managed color characteristics.
An important task in the field of lighting is the creation of semiconductor electroluminescent emitters with certain colors radiation.
Known semiconductor electroluminescence emitters, the colour characteristics of which are determined by the structure and material used in the semiconductor light-emitting crystal.
Thus, known semiconductor light-emitting crystal [EN 102849], allowing to generate a deep green color of radiation. Specified crystal contains epitactic heterostructure-based solid solutions of nitrides of the third group AlInGaN, including active region with quantum well made of nitride material InGaN, which provides radiation in the green region of visible light. The present of the material in the quantum well quantity of India is distributed in the specified material is not equal thickness of the quantum well, and reduced stepwise or smoothly on its thickness in the direction of the epitaxial growth of heterostructures. This leads to the fact that emitted by the crystal light green color shifts in the long-wave region of the spectrum maximum is in the range of wavelengths 540-570 nm.
Known emitter [WO 9750132], containing semiconductor light-emitting crystal with multi-band spectrum. Specified crystal generates light in the ultraviolet, blue and/or green region of the visible spectrum. Furthermore, this emitter contains luminescent absorbing part of the generated crystal radiation and converts it into radiation with a longer wavelength. As a result of the total radiation generated by the radiator, is provided by the mixture of the above radiation, radiator allows you to get a certain color of the light emitted, including to produce white light.
Thus, in the above-described emitters due to constructions and technologies of their manufacture can get a certain color to radiation, however, they don't you can control the color characteristics during operation.
Known semiconductor electroluminescent emitter described in EN 2202843 chosen as the closest analogue.
Specified emitter includes connected with a source of power semiconductor light-emitting crystal generating luminous flux at passage through it of the supply current. This incorporated the crystal radiating light, at least, in two different spectral bands with adjustable by changing the amplitude of the supply current ratio of intensities of radiation various spectral ranges.
The specified regulation can be attained by changing power options, namely, by changing the value of current. The ratio of intensities of radiation of different spectral range is changed if we change the value of the current flowing through the crystal current, that due to recombination of electron-hole carriers in the areas of generation of these radiations. Accordingly, changes the "contribution" of each of the radiation generated in a crystal of the total luminous flux, which leads to a change in the colour tone is emitted by the crystal light.
The considered emitter allows you to change the color characteristics of light in the process of exploitation.
However, changing the color characteristics in this oscillator is accompanied by visually discernible change in the forces of light generated by the crystal total luminous flux of light, which reduces the comfort of visual perception generated emitter of light.
The aim of the invention is to increase the comfort of the visual perception of light generated radiator with changeable color characteristics.
The essence of the invention lies in the fact that in a semiconductor oscillator, including connected with the power supply semiconductor light-emitting crystal generating luminous flux at passage through it of the supply current to used crystal radiating light, at least, in two different spectral bands with adjustable by changing your settings for power ratio of the intensities of radiation various spectral ranges, according to the invention used power source supplied with an amplitude-pulse width modulation supply current, resulting in the change of the amplitude and duration of pulses of supply current while ensuring permanence the forces of light generated by the crystal light flux.
In the particular case of the execution of the invention emitter contains phosphor material, partially absorbing radiation crystal and converts it to the radiation of a different spectral range.
The use of crystal, emitting light, at least, in two different spectral bands, allows to obtain the claimed oscillator total luminous flux, color tint which is determined by the ratio of the intensities of radiation various spectral ranges.
Feature of the proposed radiator is used in, a source of power supply is equipped with an amplitude-pulse width modulation supply current. This allows in the process of operation of the proposed emitter to amplitude-latitudinal modulation flowing through the crystal current at a constant frequency pulse.
Change of amplitude of impulses flowing through the crystal current affects different way on the process of recombination of electron-hole media in zones of radiation generation of different spectral range, which leads to a change of the ratio of intensities of these radiations. Accordingly, changes the "contribution" of each radiation generated by the crystal light stream that causes the change of color of the emitted by the crystal light.
That is claimed emitter provides the opportunity to control the process of its operation colour characteristics of light.
Essentially important is that in the process of amplitude-pulse width modulation when you change the amplitude current pulses changes and their duration so that the force of the light of the total light flow generated by the crystal remained the same.
Thus, the technical result achieved during the implementation of the proposed invention is a possibility to control the characteristics of color radiator while ensuring the permanence of the generated light flux. This enhances the comfort of visual perception generated emitter of light, as when you change the color tone of radiation is not accompanied by visually discernible change in the forces of light generated by the emitter.
In case when emitter contains phosphor material, partially absorbing radiation crystal and converts it to the radiation of a different spectral range, extends the possibilities of obtaining the required chromaticity of the total luminous flux of light, including possible to obtain total white color.
The proposed device contains a semiconductor light-emitting crystal radiating light, at least, in two different spectral ranges. The device also contains the source of the supply voltage is electrically coupled with crystal, equipped with an amplitude-pulse width modulation current. This scheme provides such a change in the amplitude and duration of a pulse supply current at a constant frequency pulse, which maintains the constancy of the light power generated by the crystal light flux.
In particular, used crystal containing grown by the method of epitaxy on a sapphire substrate heterostructure-based solid solutions of nitrides of the third group AlInGa with the p-n transition. The specified heterostructure includes s - contact layer made of a material GaN, hotspot, with two quantum wells, made of material InGaN, separated by a barrier layers, made of material (In)GaN, as well as the R - pin layer made of GaN. These quantum holes emit light in the blue region of the spectrum (450-490 nm) and in the green region of the spectrum (500-570 nm). On p - and R-pin layers formed respectively contacts p - and p-type. Led crystal is mounted in a framework casing. Contacts p - and p-type of the specified crystal connected with wire spreading room with isolated findings, through which the crystal is connected with an amplitude-pulse width modulation connected to a power source.
The device can also contain phosphor material, partially absorbing radiation crystal and converts it to the radiation of a different spectral range.
In particular, the device contains a compound with distributed in it phosphor particles, which used the following substances or mixtures thereof: SrS:the Eu, CaS:Eu. Absorption spectrum of the material lies in the region of the blue light, and the spectrum of its radiation is in the area of the red-orange light with the wave length from 580 to 630 nm. Specified compound covers the top surface and the side walls of the crystal.
The device works as follows.
When the flow through the crystal current supplied from the power supply and passed through the scheme amplitude-pulse width modulation, which are the amplitude and duration of the pulse current, crystal radiates the light of, at least, in two spectral ranges.
In particular, crystal generates radiation in the blue and green region of the spectrum.
Generated crystal light stream is formed by the mixing of radiation of different lighting range, and its color is determined by the ratio of the intensities of these radiations.
In case of use of the device in the phosphor material part of the generated crystal light is absorbed by the specified material and converted into radiation and other spectral range.
In particular, with the passage of the light flow through the layer above the phosphor material part of the light blue color is absorbed and converted into radiation red-orange color. As a result of the total luminous flux is a white light.
To change the color characteristics of the device using the amplitude and pulse width modulation specify other values of the amplitude and duration of pulses of supply current while maintaining their frequency. Change of amplitude current pulses leads to a change in the ratio of intensities of radiation different color, as a result of changes hue generated by the crystal light flux. When changing (increasing or decreasing the amplitude of pulses of a current change occurs (respectively, decrease or increase) durations of current pulses, the values of the amplitude and duration of pulses set of conditions of preservation of a constancy of light power generated by the crystal light flux.
In particular, when using the device described above crystal increase in the amplitude current pulses leads to increase of a share of radiation blue in the total luminous flow compared with the share of radiation green and Vice versa. Accordingly, changes hue generated by the crystal light flux, including the shade of white light that is received in case of use of the device described above phosphor material. So, at increase amplitude of a current of a spectrum of the device of the light flux is shifted to "the cold white light, with a decrease in the amplitude of the current area of the "warm" white light. The change of tone colors radiation is not accompanied by visually discernible change in the forces of light generated by the emitter.
1. Semiconductor electroluminescent emitter, including connected with the power semiconductor light-emitting crystal generating luminous flux at passage through it of the supply current to used crystal radiating light, at least, in two different spectral bands with adjustable by changing your settings for power ratio of the intensities of radiation various spectral ranges, wherein the used power source supplied with an amplitude-pulse width modulation supply current, resulting in the change of the amplitude and duration of pulses of supply current while ensuring the permanence of power light generated by the crystal light flux.
2. Emitter according to claim 1, characterized in that it contains a phosphor material, partially absorbing radiation crystal and converts it to the radiation of a different spectral range.