Luminescent composite material and light-emitting device based thereon

FIELD: chemistry.

SUBSTANCE: luminescent composite material contains a polymer base 1 made of an optically transparent polymer material and a phosphor-containing multilayer polymer film consisting of three layers: optically transparent polymer film 2; polymer composition 3, including an inorganic phosphor - cerium-doped yttrium-aluminium garnet, or cerium-doped gallium-gadolinium garnet; polymer composition 4 with dispersed semiconductor nanocrystals made of a semiconductor nucleus, first and second semiconductor layers, and emitting a fluorescent signal with fluorescence peaks in the wavelength range of 580-650 nm. Layers of the multilayer polymer film can also be arranged in the following order: polymer composition 3 containing a phosphor, polymer composition 4 with dispersed semiconductor nanocrystals, optically transparent polymer film 2. The light-emitting device contains a luminescent composite material situated away from a light source. The light source is in form of a light-emitting diode with radiation wavelength of 430-470 nm. The light-emitting devices have service life longer than 50000 h, luminous efficacy higher than 100 lm/W and correlated colour temperature of 2500-5000 K.

EFFECT: invention enables to obtain white light with colour rendering index of more than 80.

48 cl, 14 dwg

 

The invention relates to lighting, namely, the luminescent composite material containing semiconductor nanoparticles, which can be used in the manufacture of lighting devices of General and local lighting that is used as a source of white light, as well as to the device based on it.

In the present invention it comes to luminescent composite material that is used in LEDs to produce white light, and the device fabricated using this material. White light is obtained by mixing blue light from the led itself, and far more pereizluchennykh from the phosphor included in the luminescent composite material.

Currently, led lamps high power LEDs, the temperature on the chip (the chip) which reaches 80-100°C during operation. The high temperature of the led leads to decrease in efficiency and increase in the rate of degradation of the phosphor material is applied directly to the chip or located in close proximity to the chip. As a result, the service life is limited thermal stability is included in the composition of the phosphor. Separately, it should be noted that white light modern led systems, which is what's supposed to be used for interior lighting in homes and offices, the demands of high color rendering index (CRI more than 80)

To produce white light using a blue led is widely known a method of causing a yellow phosphor, for example, yttrium aluminum garnet, or a mixture of red and yellow-green phosphors, directly on the surface of a blue led. However, the use of led systems containing only a single phosphor, for the purposes of General internal lighting has significant limitations due to the low quality of the light generated by such systems (the color rendering index or CRI<75). In turn, the use of multiple phosphors requires the optimization of their ratio in the composition svetoprovodyaschego material, a certain sequence of their application, as well as the choice of the method of applying them. This simple mixture of phosphors is unable to achieve high conversion efficiency of light.

A device for generating white light from the led light source disclosed in international publication WO 2007/009010 A2, H01L 33/00, publ. 18.01.2007, which consists of an led chip emitting at the same wavelength, semiconductor nanocrystals that absorb at least the first portion of the light from the led chip and keep the attachment to the second wavelength, powdered phosphor absorbing, p is at least the second part of the light from the led chip and keep the attachment it at the third wavelength. The device provides higher quality white light emitted from the led light source, in particular, improves the color rendering index and decreases correlated color temperature with a slight deterioration in the efficiency of the system as a whole. This is achieved through the use of a mixture of phosphors, which includes semiconductor nanocrystals emitting in the red-orange (600-650 nm) and green-blue (490-530 nm) wavelength ranges.

The disadvantages are, first, the application of the phosphors directly on the led chip, resulting in accelerated thermal degradation of the phosphors, as nanocrystals have low thermal stability, and, consequently, to reduced service life of the led source; secondly, the use of a mixture of phosphors, and not a separate layer of their application, resulting in reduced efficiency led source in General.

It is also known an invention disclosed in the application US 2011/187262 A1, 01J 1/62, publ. 04.08.2011, which contains a light-emitting diode and a spherical permeable membrane, the surface of the shell inside and outside covered with a layer containing the phosphor. In this invention uses traditional LUMIN the odds based on yttrium aluminum garnet, silicates, silicon nitride, sulfide, in which the emission in the red region corresponds rare earth element in the form of dopant (in particular, europium). Use the red phosphor allows to achieve high color rendering index (CRI>90) for the color temperature to 2700 K. However, the red phosphors based on europium have several disadvantages. First, it is the poor resistance to moisture and oxygen, which leads to rapid degradation of the phosphor. Secondly, part of the spectrum of the radiation is in the near IR region (not perceived by the human eye), which reduces the efficiency of the system as a whole. Thirdly, a large amount of material, are used as the particles of micron or submicron size, as well as a further reduction in efficiency due to light scattering by large particles.

The disadvantages of this invention can also be attributed not high enough conversion efficiency of light from the led source source specified by the design printed on the shell of the phosphors in the case of using the mixture of phosphors. This is because the conversion efficiency is influenced by the sequence of layers with different phosphors, and the thickness of these layers, and the ratio of the phosphor is in a different layer.

Known design led with a phosphor containing a crystal, a conical reflector and a phosphor, which is located remotely from the crystal (Patent RF №2416841 C1, H01L 33/00, publ. 20.04.11). The invention allows to increase the efficiency of lateral radiation of the crystal, which is converted into radiation of the phosphor deposited on the inclined surface of the reflector. The authors managed to obtain a uniform chromaticity of the white light led in different directions due to the wide radiation pattern of the used phosphor. In addition, the use of the white surface of the reflector can reflect downward radiation of the phosphor located on the reflector, which increases the radiation from the led. As a result of increasing the luminous efficiency of the led by 20-30%, and the uniformity of the color of radiation.

However, the use of only one phosphor in the present invention does not completely overlap the range from blue to red colors, respectively, to obtain white light with high color rendering index.

As the prototype was chosen technical solution disclosed in the patent application US 2011/0090670 A1, B32B 3/00, C09J 7/02, publ. 21.04.2011, which contains a fluorescent material and a light-emitting device based on it. One of the VA is Ianto implementation of the technical solutions is a fluorescent material, in which, among other things, includes a layer containing phosphors based on silicates, sulfides, yttrium-aluminum and terbium aluminum garnet. Another option execute the solution is a device for generating white light with high color rendering index, which contains an optical film comprising a fluorescent material excited by light emitted from the led chip, so that the light passing through the optical film has a colour rendering index of between 85 and 100. Fluorescent material allows you to create a light source having a color rendering index in the range of 85-100 when correlated color temperatures in the range of 3000-5000 K.

The main disadvantage of this solution is the use of phosphors based on rare earth elements, which have low thermal stability and low photostability when exposed to moisture and oxygen. Moreover, this solution has limitations associated with the use of the film material.

The aim of the present invention is to provide a luminescent composite material and light-emitting devices based on it to produce white light. Luminescent composite material can be used in led lighting devices in General and m is the local lighting to increase their effectiveness, life, providing comfort to the human eye light (corresponding to the sanitary norms) from the lighting device by implementing a set of correlated color temperature and color rendering index.

The technical result consists in increasing the service life of the led white light source, as well as to improve its effectiveness. In addition, with declared nuclear material and devices based on it can receive light with a color rendering index of 80 or more, a correlated color temperature in the range of 2500-5000 To and from a light yield of more than 100 LM/W. The service life of such devices will be 50,000 hours or more.

The technical result consists in increasing the photo - and thermal stability, and resilience to environmental luminescent composite material due to the use in the composition of a new type of luminescent semiconductor nanocrystals is related to the following type: "core/first semiconductor shell/second semiconductor shell". Hereinafter use the following notation semiconductor nanocrystals: core/first semiconductor shell/the second semiconductor layer. For Example, CdSe/CdS/ZnS.

In the proposed luminescent composite material re the ENES, as problems of structural nature and problems of composition, thickness and sequence of deposition of functional layers, resulting in this material allows you to create led white light with a color rendering index of 80 or more, a correlated color temperature in the range of 2500-5000 K, luminous efficiency of more than 100 LM/W, service life of 50,000 hours or more.

The problem is solved and the technical result is achieved in that the luminescent composite material includes a polymer base, made of optically transparent polymeric material, and a multilayer polymeric film containing phosphors, with multilayer polymeric film comprises at least three layers, one of which is an optically transparent polymer film, the other polymer composition containing buried semiconductor nanocrystals, and the third layer is a polymer composition comprising inorganic phosphors. Semiconductor nanocrystals made of a semiconductor core of the first semiconductor layer and the second semiconductor layer and emit a fluorescent signal with the peak maxima of fluorescence in the wavelength range of 580-650 nm.

The task is also solved, and the technical result is achieved by the fact light-emitting device for generating white light contains a light source located remotely from the light source is a luminescent composite material, while the light source is in the form of a led with a wavelength in the range of 430-470 nm, part of the radiation which passes through the luminescent composite material, and another part of the radiation is absorbed by the luminescent composite material of a polymer substrate of optically transparent polymeric material with a multilayer polymeric film comprising at least three layers, one of which is a polymer composition comprising inorganic phosphors, the other optically transparent polymer material, the third is a polymer composition containing buried semiconductor nanocrystals, where the nanocrystals are made in the form of semiconductor cores the first semiconductor layer and the second semiconductor layer and emit a fluorescent signal with the peak maxima of fluorescence in the wavelength range of 580-650 nm, resulting in radiation obtained at the output of the luminescent composite material, provides white light with a color rendering index of more than 80.

The claimed group of inventions is illustrated by drawings, on which:

Figure 1 - luminescent composite material (option 1);

Figure 2 - luminescent composite material (option 2);

Figure 3 - range of fluoresc is ncii semiconductor nanocrystals InP/CdSe/ZnSe;

4 is a fluorescence spectrum of semiconductor nanocrystals (CdSe/CdS/ZnS;

5 is a fluorescence spectrum of semiconductor nanocrystals CuInS2/ZnSe/ZnS;

6 is a fluorescence spectrum of a luminescent composite material containing CdSe/CdS/ZnS with wavelength of maximum fluorescence at 620 nm (option 1);

Fig.7 - fluorescence spectrum luminescent composite material containing CdSe/CdS/ZnS with wavelength of maximum fluorescence 621 nm (option 1);

Fig - fluorescence spectrum luminescent composite material containing CdSe/CdS/ZnS with wavelength of maximum fluorescence at 620 nm (option 2);

Fig.9 - fluorescence spectrum luminescent composite material containing CuInS2/ZnSe/ZnS with wavelength of maximum fluorescence at 610 nm (option 1);

Figure 10 - spectrum fluorescence luminescent composite material containing InP/CdSe/ZnSe with wavelength of maximum fluorescence 630 nm (option 1);

11 is a fluorescence spectrum of a luminescent composite material containing CuInSe2/CdS/ZnS with wavelength of maximum fluorescence 615 nm (option 1);

Fig light - emitting device;

Fig light - emitting device with a reflector;

Fig is a graph of radiation intensity (registration signal at 620 nm) light-emitting devices based on led chip (45 nm, 12 watts) and luminescent composite materials: known and, for 2000 hours at a temperature of 30-50°C.

To produce white light using a blue light source is proposed to use a new luminescent composite material, which is obtained as follows.

Produce a polymer base 1 by any known method, for example, by casting under pressure with the addition, if necessary, a light-diffusing additive on the basis of TiO2, SiO2, ZnO, BaSO4, CaCO3or polymeric spherical particles. The polymer base 1 may be made of optically transparent polymeric material selected from the group of polycarbonate, polymethyl methacrylate, polyvinyl chloride or polystyrene, the thickness of the framework 1 is in the range from 0.5 to 3 mm.

Create a multilayer polymeric film by coating on the optically transparent polymer film 2 is one of the known methods, for example, a method of printing successively layer polymeric composition 3 comprising an inorganic phosphor, luminescense in the yellow-green region of the spectrum, and a layer of polymeric composition 4 containing buried semiconductor nanocrystals, luminescense in the orange-red region of the spectrum.

In an advantageous embodiment, the inorganic phosphor dispersed in the volume of the polymer composition, is selected from the group of yttrium-aluminum garnets doped with cerium, or gallium-gadolinium garnets doped with cerium.

In an advantageous embodiment, the semiconductor nanocrystals are semiconductor core comprising a semiconductor material selected from the group: CdS, CdSe, CdTe, InP, InAs, CuInS2, CuInSe2the first semiconductor layer composed of a semiconductor material selected from the group of: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, InP, InAs, the second semiconductor layer composed of a semiconductor material selected from the group of: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, InP, InAs.

The above structure of the semiconductor nanocrystals provide an increase in the relative quantum yield of fluorescence of 90% and above. In this case thermal stability and photostability of these nanocrystals allow their use in light-emitting devices with a life of 50,000 hours or more.

Figure 1 schematically shows a luminescent composite material containing the base 1 and a multilayer polymeric film comprising three layers located relative to the polymer base 1 in the following order: polymer film 2, the polymer composition 3 comprising an inorganic phosphor, polymer composition containing buried semiconductor nanocrystals 4.

While the film 2 may be made of a polymeric material selected from the group of polycarbonate, polymethyl methacrylate, polyvinyl chloride, polystyrene or polyethylene terephthalate, and in its composition, if necessary, may include a light-diffusing additive on the basis of TiO2, SiO2, ZnO, BaSO4, CaCO3or light-diffusing additive in the form of spherical polymer particles.

The polymer composition may be made of a polymeric material selected from the group: poly (methyl methacrylate), a polyisocyanate, or a mixture thereof, and which, optionally, may include a light-diffusing additive on the basis of TiO2, SiO2, ZnO, BaSO4, CaCO3or light-diffusing additive in the form of spherical polymer particles.

Multilayer polymer film is fixed on the surface of the polymer base 1. Inorganic phosphor and semiconductor nanocrystals are selected so that the combination of their maximum fluorescence spectra covered the wavelength range from 480 to 650 nm. Quantum yields of fluorescence inorganic phosphor and semiconductor nanocrystals must be at least 90%.

Figure 2 schematically shows another embodiment of a luminescent composite material containing the base 1 and a multilayer polymeric film comprising three layers, the location is defined relative to the polymer base in the following order: polymer composition 3, comprising an inorganic phosphor, polymer composition containing buried semiconductor nanocrystals 4, optically transparent polymer film 2.

The number of layers in multilayer polymer film depends on the specific tasks and can be anything, but should not be less than three. The examples do not limit all the possible combinations of layers in a multilayer polymer film, and given solely for the purpose of confirmation of the requested material, described in the independent claims.

When this layer of inorganic phosphor should be located closer to the source of the blue light than the layer of semiconductor nanocrystals. The concentration of phosphor and semiconductor nanocrystals, as well as the thickness of the respective layers are selected so that the CCT and CRI of the white light emitted by the light-emitting device containing a light source located remotely from the light source is a luminescent composite material lay in the range of 2500-5000 To and 80-100, respectively.

For example, luminescent composite material consisting of optically transparent polymeric material, made of polymethyl methacrylate, 0.5 mm thick, optically transparent polymer film made of polymethylmethacrylate, kernou compositions on the basis of polymethylmethacrylate, including yttrium aluminum garnet doped with cerium, polymer compositions on the basis of polymethylmethacrylate containing buried nanocrystals structure of CdSe/CdS/ZnS with wavelength of maximum fluorescence 615 nm, is made as shown in figure 1. For this luminescent composite material, the color rendering index is 83, and a correlated color temperature of 3500 K.

If luminescent composite material consists of an optically transparent polymer material, made of polymethyl methacrylate, of a thickness of 0.5 mm, polymer compositions on the basis of polymethylmethacrylate containing buried nanocrystals structure of CdSe/CdS/ZnS with wavelength of maximum fluorescence 615 nm, the polymer composition on the basis of polymethylmethacrylate comprising yttrium aluminum garnet doped with cerium, optically transparent polymer film made of polymethylmethacrylate, as shown in figure 2, the color rendering index for this luminescent composite material will be 90, and correlated color temperature will be 2700 K.

For example, luminescent composite material consisting of optically transparent polymeric material, made of polycarbonate, 2 mm thick, optically transparent polymer film made of polycarbon is the polymer compositions on the basis of polymethylmethacrylate, including GA-gadolinium garnet doped with cerium, polymer compositions on the basis of polymethylmethacrylate containing buried nanocrystals structure of CdTe/CdS/ZnS with wavelength of maximum fluorescence at 620 nm, is made as shown in figure 1. For this luminescent composite material, the color rendering index is 81, and the correlated color temperature is up to 3700 K.

If luminescent composite material consists of an optically transparent polymer material, made of polycarbonate, 2 mm thick, optically transparent polymer film made of polycarbonate, polymer compositions on the basis of polymethylmethacrylate, including GA-gadolinium garnet doped with cerium, optically transparent polymer film made of polymethylmethacrylate, as shown in figure 2, the color rendering index for this luminescent composite material will be 94, and correlated color temperature will be 3200 K.

Figure 3 shows the spectrum of the fluorescence of semiconductor nanocrystals InP/CdSe/ZnSe. The wavelength of maximum fluorescence was 580 nm.

Figure 4 shows the spectrum of the fluorescence of semiconductor nanocrystals (CdSe/CdS/ZnS. The wavelength of maximum fluorescence with the set 610 nm.

Figure 5 shows the spectrum of the fluorescence of semiconductor nanocrystals CuInS2/ZnSe/ZnS. The wavelength of maximum fluorescence was 640 nm.

Figure 6 shows the fluorescence spectrum of the luminescent composite material (CdSe/CdS/ZnS, λ=620 nm)containing a multilayer polymeric film with a sequence of layers, shown in figure 1. The color rendering index of 90 correlated color temperature 3300 K.

Luminescent composite material consists of an optically transparent polymer material, made of polymethyl methacrylate, 0.5 mm thick, optically transparent polymer film made of polymethyl methacrylate, a polymer composition on the basis of polymethylmethacrylate, including a yellow phosphor (yttrium aluminum garnet doped with cerium), polymer compositions on the basis of polymethylmethacrylate containing buried nanocrystals structure of CdSe/CdS/ZnS with wavelength of maximum fluorescence at 620 nm.

7 shows fluorescence spectrum luminescent composite material (CdSe/CdS/ZnS, λ=621 nm)containing a multilayer polymeric film with a sequence of layers, shown in figure 1. The color rendering index of 90 correlated color temperature equal to 3000 K.

Luminescent composite material consists of an optically transparent polymer material, made of the olycarbonate, 3 mm thick, with a light-diffusing additive TiO2, optically transparent polymer film made of polycarbonate, with a light-diffusing additive SiO2polymer compositions on the basis of polymethylmethacrylate, including gallium-gadolinium garnet doped with cerium, with light-diffusing additive ZnO, polymer compositions on the basis of polymethylmethacrylate with a light-diffusing additive SiO2and containing buried nanocrystals structure of CdSe/CdS/ZnS with wavelength of maximum fluorescence 621 nm.

On Fig shows the fluorescence spectrum of the luminescent composite material (CdSe/CdS/ZnS, λ=620 nm)containing a multilayer polymeric film with a sequence of layers, shown in figure 2. The color rendering index of 91, a correlated color temperature equal to 4000 K.

Luminescent composite material consists of an optically transparent polymer material, made of polycarbonate, of a thickness of 3 mm, with light-diffusing additive TiO2, optically transparent polymer film made of polycarbonate, with a light-diffusing additive SiO2polymer compositions on the basis of polymethylmethacrylate, including gallium-gadolinium garnet doped with cerium, with light-diffusing additive ZnO, polymer compositions on the basis of polymethylmethacrylate with a light-diffusing what obakoy SiO 2and containing buried nanocrystals structure of CdSe/CdS/ZnS with wavelength of maximum fluorescence at 620 nm.

Figure 9 shows the fluorescence spectrum of the luminescent composite material (CuInS2/ZnSe/ZnS, λ=610 nm)containing a multilayer polymeric film with a sequence of layers, shown in figure 1. The color rendering index 80 correlated color temperature of 5000 K.

Luminescent composite material consists of an optically transparent polymer material made of polyvinyl chloride, 2 mm thick, optically transparent polymer film made of polyvinyl chloride, a polymer composition based on MDI, including gallium-gadolinium garnet doped with cerium, with light-diffusing additive TiO2polymer compositions on the basis of polymethyl methacrylate and containing buried nanocrystals patterns CuInS2/ZnSe/ZnS with wavelength of maximum fluorescence at 610 nm.

Figure 10 shows the fluorescence spectrum of the luminescent composite material (InP/CdSe/ZnSe, λ=630 nm)containing a multilayer polymeric film with a sequence of layers, shown in figure 1. The color rendering index of 90 correlated color temperature equal to 2500 K.

Luminescent composite material consists of an optically transparent polymer material, made of poly is tirola, 2 mm thick, optically transparent polymer film made of polyethylene terephthalate, the polymer composition on the basis of polymethylmethacrylate comprising yttrium aluminum garnet doped with cerium, with light-diffusing additive SiO2polymer compositions based on MDI and containing buried nanocrystals structure InP/CdSe/ZnSe with wavelength of maximum fluorescence 630 nm.

Figure 11 shows fluorescence spectrum luminescent composite material (CuInSe2/CdS/ZnS, λ=615 nm)containing a multilayer polymeric film with a sequence of layers, shown in figure 1. The color rendering index of 90 correlated color temperature equal to 4500 K.

Luminescent composite material consists of an optically transparent polymer material, made of polycarbonate, 0.5 mm thick, optically transparent polymer film made of polystyrene, polymer compositions on the basis of polymethylmethacrylate, including gallium-gadolinium garnet doped with cerium, with light-diffusing additive ZnO, the polymer composition based on polymethyl methacrylate and containing buried nanocrystals patterns CuInSe2/CdS/ZnS with wavelength of maximum fluorescence 615 nm.

On Fig shows one embodiment of a light-emitting device for receiving blogosphere, containing the light source 5, the heat sink material 6 and located remotely from the light source is a luminescent composite material 7, as described above. The light source 5 is made in the form of an led with a wavelength in the range of 430-470 nm. Part of the radiation from the light source 5 passes through the luminescent composite material 7, and the other part of the radiation is absorbed by the fluorescent material 7, resulting in the radiation received at the output of the fluorescent material 7, gives a white light with a color rendering index of more than 80. This is achieved by the fact that in the luminescent composite material 7 is simultaneously used inorganic phosphor and semiconductor nanocrystals that emit a fluorescent signal with the peak maxima of fluorescence in the wavelength range of 580-650 nm.

On Fig shows another embodiment of a light emitting device for generating white light containing multiple light sources 5, the heat sink material 6 luminescent composite material 7 located remotely from the light sources 5. The surface of the luminescent composite material may be flat, convex or concave shape. The device further comprises a reflector 8, is necessary to reduce losses due to part of the light emitted popadayutsa inside the device through reflection and re-emission. The reflection coefficient of the reflector should be at least 99%.

On Fig presents a graph of radiation intensity (registration signal at 620 nm) light-emitting devices based on led chip (450 nm, 12 W) and luminescent composite materials: known and proposed. Position 9 depicts a graph of intensity of radiation known luminescent material based on semiconductor nanocrystals with the structure of CdSe/ZnS position 10 marked graph showing the change of the radiation intensity of the proposed luminescent composite material containing a yellow phosphor (yttrium aluminum garnet doped with cerium), and semiconductor nanocrystals structure of CdSe/CdS/ZnS.

From the graphs it is seen that the fluorescence intensity of the proposed luminescent composite material is stored for a long time, in contrast to the known luminescent material.

Thus, obtained as described above luminescent composite material allows manufacturing the light-emitting device having the following characteristics:

- increased service life through the use of a new type red fluorescent semiconductor nanocrystals, as well as the location of the luminescent composite is the material away from the source of blue light;

- high color rendering index due to the simultaneous use of inorganic phosphor, fluorescent yellow-green region of the spectrum, and semiconductor nanocrystals, fluorescent orange-red region of the spectrum;

- high light yield due to the location of the luminescent composite material away from the source of blue light, as well as layer-by-layer arrangement of inorganic phosphor and semiconductor nanocrystals.

1. Luminescent composite material containing a polymer base, made of optically transparent polymeric material, and a multilayer polymeric film containing phosphors, wherein the multilayer polymeric film comprises at least three layers arranged relative to the polymer base in the following order: optically transparent polymer film; a polymer composition comprising an inorganic phosphor is yttrium aluminum garnet doped with cerium, or gallium-gadolinium garnet doped with cerium; polymer composition containing buried semiconductor nanocrystals made of semiconductor cores, the first and second semiconductor layers and emits fluorescent signal with maxima peaks of fluorescence in the wavelength range of 580-650 nm.

2. The material according to claim 1, characterized in that the semiconductor core is composed of a semiconductor material selected from the group of: CdSe, CdTe, InP, CuInS2, CuInSe2.

3. The material according to claim 1, characterized in that the first semiconductor layer comprises a semiconductor material selected from the group of: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, InP, InAs.

4. The material according to claim 1, characterized in that the second semiconductor layer comprises a semiconductor material selected from the group of: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, InP, InAs.

5. The material according to claim 1, characterized in that the optically transparent polymer material is chosen from the group of polycarbonate, polymethyl methacrylate, polyvinyl chloride or polystyrene.

6. The material according to claim 5, characterized in that the optically transparent polymer material may further include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

7. The material according to claim 1, characterized in that the thickness of the polymer is from 0.5 to 3 mm.

8. The material according to claim 1, characterized in that the optically transparent polymer film made of a polymeric material selected from the group of polycarbonate, polymethyl methacrylate, polyvinyl chloride, polystyrene or polyethylene terephthalate.

9. Material of claim 8, characterized in that the optically transparent polymer film may further include svetorasseivayuschim the additive on the basis of TiO 2, SiO2, ZnO.

10. The material according to claim 1, characterized in that the polymer composition is made of polymethylmethacrylate, MDI or mixtures thereof.

11. Material of claim 10, characterized in that the polymer composition can additionally include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

12. Luminescent composite material containing a polymer base, made of optically transparent polymeric material, and a multilayer polymeric film containing phosphors, wherein the multilayer polymeric film comprises at least three layers arranged relative to the polymer base in the following order: a polymeric composition comprising an inorganic phosphor is yttrium aluminum garnet doped with cerium, or gallium-gadolinium garnet doped with cerium; polymer composition containing buried semiconductor nanocrystals made of semiconductor cores, the first and second semiconductor layers and emits fluorescent signal with the peak maxima of fluorescence in the range of lengths waves 580-650 nm; optically transparent polymer film.

13. The material according to item 12, wherein the semiconductor core is composed of a semiconductor material selected from the group of: CdSe, CdTe, InP, CuInS2, CuInSe2./p>

14. The material according to item 12, wherein the first semiconductor layer comprises a semiconductor material selected from the group of: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, InP, InAs.

15. The material according to item 12, wherein the second semiconductor layer comprises a semiconductor material selected from the group of: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, InP, InAs.

16. The material according to item 12, wherein the optically transparent polymer material is chosen from the group of polycarbonate, polymethyl methacrylate, polyvinyl chloride or polystyrene.

17. The material according to item 16, characterized in that the optically transparent polymer material may further include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

18. The material according to item 12, characterized in that the thickness of the polymer is from 0.5 to 3 mm.

19. The material according to item 12, wherein the optically transparent polymer film made of a polymeric material selected from the group of polycarbonate, polymethyl methacrylate, polyvinyl chloride, polystyrene or polyethylene terephthalate.

20. The material according to claim 19, characterized in that the optically transparent polymer film may further include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

21. The material according to item 12, wherein the polymer composition is made of polymethylmethacrylate, polii ocyanate or mixtures thereof.

22. The material according to item 21, characterized in that the polymer composition can additionally include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

23. Light emitting device for generating white light containing the light source and located remotely from the light source is a luminescent composite material, characterized in that the light source is in the form of a led with a wavelength in the range of 430-470 nm, part of the radiation which passes through the luminescent composite material, and another part of the radiation is absorbed by the luminescent composite material of a polymer substrate of optically transparent polymeric material with a multilayer polymeric film comprising at least three layers arranged relative to the polymer base in the following order: optically transparent polymer film; a polymer the composition comprising an inorganic phosphor is yttrium aluminum garnet doped with cerium, or gallium-gadolinium garnet doped with cerium; polymer composition containing buried semiconductor nanocrystals made of semiconductor cores, the first and second semiconductor layers and emits fluorescent signal with the peak maxima of the fluorescence range of wavelengths 580-650 nm, resulting radiation is obtained at the output of the luminescent composite material, provides white light with a color rendering index of more than 80.

24. The device according to item 23, wherein the semiconductor core is composed of a semiconductor material selected from the group of: CdSe, CdTe, InP, CuInS2, CuInSe2.

25. The device according A.25, characterized in that the first semiconductor layer comprises a semiconductor material selected from the group of: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, InP, InAs.

26. The device according to item 23, wherein the second semiconductor layer comprises a semiconductor material selected from the group of: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, InP, InAs.

27. The device according to item 23, wherein the optically transparent polymer material is chosen from the group of polycarbonate, polymethyl methacrylate, polyvinyl chloride or polystyrene.

28. The device according to item 27, wherein the composition is optically transparent polymeric material may further include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

29. The device according to item 23, wherein the thickness of the polymer is from 0.5 to 3 mm.

30. The device according to item 23, wherein the optically transparent polymer film made of a polymeric material selected from the group of polycarbonate, polymethylmethacrylate, polyvinylchlorid is, polystyrene or polyethylene terephthalate.

31. The device according to item 30, wherein the composition is optically transparent polymeric material may further include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

32. The device according to item 23, wherein the polymer composition is made of polymethylmethacrylate, MDI or mixtures thereof.

33. The device according to p, characterized in that the polymer composition can additionally include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

34. The device according to item 23, characterized in that it further includes a reflector.

35. The device according to item 23, wherein the surface of the luminescent composite material may be flat, convex or concave form.

36. Light emitting device for generating white light containing the light source and located remotely from the light source is a luminescent composite material, characterized in that the light source is in the form of a led with a wavelength in the range of 430-470 nm, part of the radiation which passes through the luminescent composite material, and another part of the radiation is absorbed by the luminescent composite material of a polymer substrate of optically transparent polymeric Mat is the Rial, multilayer polymer film comprising at least three layers arranged relative to the polymer base in the following order: a polymeric composition comprising an inorganic phosphor is yttrium aluminum garnet doped with cerium, or gallium-gadolinium garnet doped with cerium; polymer composition containing buried semiconductor nanocrystals made of semiconductor cores, the first and second semiconductor layers and emits fluorescent signal with the peak maxima of fluorescence in the wavelength range of 580-650 nm, optically transparent polymer film; causing the radiation from the output of the luminescent composite material gives white radiation with rendering index greater than 80.

37. The device according to p, characterized in that the semiconductor core is composed of a semiconductor material selected from the group of: CdSe, CdTe, InP, CuInS2, CuInSe2.

38. The device according to p, characterized in that the first semiconductor layer comprises a semiconductor material selected from the group of: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, InP, InAs.

39. The device according to p, characterized in that the second semiconductor layer comprises a semiconductor material selected from the group of: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, InP, InAs.

40. The device according to p notable is then optically transparent polymeric material chosen from the group of polycarbonate, polymethylmethacrylate, polyvinyl chloride or polystyrene.

41. The device according to p, characterized in that the optically transparent polymer material may further include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

42. The device according to p, characterized in that the thickness of the polymer is from 0.5 to 3 mm.

43. The device according to p, characterized in that the optically transparent polymer film made of a polymeric material selected from the group of polycarbonate, polymethyl methacrylate, polyvinyl chloride, polystyrene or polyethylene terephthalate.

44. The device according to item 43, wherein the composition is optically transparent polymer film may further include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

45. The device according to p, characterized in that the polymer composition is made of polymethylmethacrylate, MDI or mixtures thereof.

46. The device according to item 45, wherein the composition of the polymeric composition may further include a light-diffusing additive on the basis of TiO2, SiO2, ZnO.

47. The device according to p, characterized in that it further includes a reflector.

48. The device according to p, characterized in that the surface of the luminescent composite material may be flat, convex or concave shape.



 

Same patents:

FIELD: physics.

SUBSTANCE: disclosed is a flexible (self supporting) polycarbonate film filled with inorganic phosphors made from solid solutions of aluminates and silicates of rare-earth elements. The film is formed by moulding from a solution of a suspension of a polycarbonate and phosphor in chlorinated aliphatic solvents and contains 10-14 wt % polycarbonate, 4-8 wt % inorganic phosphor with a garnet structure, 0.08-0.8% plasticiser based on an acrylonitrile-styrene composition, 0.5-2% polyoxy monooleate surfactant and a solvent based on chlorinated aliphatic solvents selected from methylene chloride and/or chloroform, bringing its composition to 100%.

EFFECT: invention enables to form a polymeric luminescent flexible, self supporting polycarbonate film, which is suitable for use in scintillators, where contacting is carried out by mechanical attachment, as well as in semiconductor illumination structures in which there is adhesive attachment of a film, having optical contact with a heterostructure.

6 cl, 1 tbl, 7 ex

FIELD: physics.

SUBSTANCE: white light optical transistor is a semiconductor device designed to emit optical radiation based on a transistor structure with an alternating conductivity type, which forms an active region which generates a blue light. The optical transistor has a housing accommodating a chip with series-connected region with a first conductivity type, which is the emitter, a region with a second conductivity type, which is the base, and a second region with a first conductivity type, which is the collector. Each of the regions has an ohmic contact outside the housing, wherein the chip with the emitter with a reduced thickness, connected through the base to the collector, is placed in an optically transparent compound, in the top part of which a phosphor is implanted.

EFFECT: enabling control of the base current of an optical transistor and, as a result, control the current of its emitter-collector circuit, thereby controlling luminous intensity of the active region of the optical transistor, which enables to create different emission modes of the optical transistor, including stabilisation of emission at a given level.

1 dwg

FIELD: chemistry.

SUBSTANCE: described are novel polycyclic nitrogen-containing heteroaromatic compounds - tetracyano-substituted 1,4,9b-triazaphenalenes of general formula 1

, where R denotes phehyl, substituted with NO2, halogen, C1-4 alky or -OR1 group, where R1 denotes methyl, naphthyl or heteroaryl of the composition C4H3S, and a method for production thereof from corresponding R-substituted 1,1,2,2-tetracyanocyclopropanes while boiling in 1,2-dichlorobenzene.

EFFECT: described compounds can be used as fluorescent indicators for new-generation opto-chemosensors or as material for light-emitting diodes.

2 cl, 12 ex, 37 dwg

FIELD: physics.

SUBSTANCE: method of making a wavelength converting light-emitting device comprising: a light-emitting diode for emitting optical radiation with a first wavelength, having a light-emitting surface on which there is a wavelength converting material adapted to receive optical radiation emitted by said light-emitting diode, and convert at least a portion of said optical radiation to optical radiation with a second wavelength; placing on at least a portion of the external surface of said light-emitting device with the converted wavelength a light-cured coating material, irradiation with optical radiation with said first wavelength with effective intensity of which results in curing of said light-cured coating material; and curing at least a portion of said light-cured coating material by irradiating said material with said light-emitting diode in order to form cured material which blocks optical radiation. Two versions of the wavelength converting light-emitting device are also disclosed. The invention can be used to selectively prevent output of unconverted optical radiation from a device.

EFFECT: wavelength converted light-emitting diode emits substantially only converted optical radiation.

12 cl, 2 dwg

FIELD: physics.

SUBSTANCE: illumination device (10) includes: a light-emitting diode (LED) (20), a radiation emitting LED (21); a transmissive support (50), which contains luminescent material (51), where the luminescent material (51) is arranged to absorb at least part of radiation of LED (21) and emit luminescent material emission (13). The LED (20) and luminescent material (51) are configured to generate light (115) of a predetermined colour; a translucent exit window (60) arranged to transmit at least part of the light (15); a LED cavity (11) and a diffuser cavity (12). The LED cavity (11) has a LED cavity side wall (45) and a LED cavity cross section (211), and the diffuser cavity (12) has a diffuser cavity side wall (41) and a diffuser cavity cross section (212), wherein the transmissive support (50) is downstream of the LED (20) and upstream of the translucent exit window (60); the LED cavity (11) is upstream of the transmissive support (50) and downstream of the LED (20); the diffuser cavity (12) is downstream of the transmissive support (50) and upstream of the translucent exit window (60); the ratio of the diffuser cavity cross section (212) and LED cavity cross section (211) is in the range of 1.01 to 2.

EFFECT: design of an illumination device with a virtually colourless outward appearance in the off state.

12 cl, 1 ex, 1 tbl, 2 dwg

FIELD: physics.

SUBSTANCE: semiconductor light-emitting device according to the invention comprises: a substrate; a first layer of an n-type conductivity semiconductor formed on the substrate; a second layer of a p-type conductivity semiconductor; an active layer between the first and second layers; a conducting layer on the second layer; a first contact deposited on the substrate; a second contact deposited on the conducting layer, wherein the substrate has at least one through-hole made in form of a truncated inverted pyramid. The first, second, active and conducting layers are deposited on both the horizontal portions of the substrate and the inner faces of the holes.

EFFECT: high efficiency of semiconductor light-emitting devices, while suppressing negative effects associated with vertices of inverted surface pyramids.

19 cl, 3 ex, 5 dwg

FIELD: physics.

SUBSTANCE: device includes a semiconductor light-emitting diode (LED), a phosphor layer on top of the LED and a sealing compound on top of the LED and the phosphor, which is in contact with the phosphor and includes a transparent material containing inert particles of a non-phosphor, which make up 0.5-10% of the weight of the sealing compound, with average diameter smaller than 1 mcm, wherein the particles have a white colour in white ambient light. The method of making the LED involves forming a layer of phosphor on top of a LED and forming a sealing compound on top of the LED and the phosphor.

EFFECT: high brightness by eliminating yellow-green colour.

14 cl, 8 dwg

FIELD: physics.

SUBSTANCE: method of making a lead selenide-based semiconductor structure, having a substrate and a lead selenide film, involves forming a polycrystalline lead selenide film and subsequent heat treatment thereof in an oxygen-containing medium, wherein according to the invention, the polycrystalline lead selenide film is formed on a substrate made from material having a temperature coefficient of linear expansion ranging from 10·10-6 °C-1 to 26·10-6 °C-1.

EFFECT: invention enables to form lead selenide-based photosensitive and emitting structures.

6 cl, 3 ex, 3 dwg

FIELD: physics.

SUBSTANCE: method of making a semiconductor light-emitting device according to the invention includes steps of: growing a semiconductor structure having a AlGalnP light-emitting layer between an n-type region and a p-type region on a growth substrate; forming n- and p-contacts that are electrically connected to n- and p-type regions of the semiconductor structure, wherein both contacts lie on the same side of the semiconductor structure and wherein at least one of the n- and p-contacts is reflecting; connecting said semiconductor structure to a mounting; and after connecting the semiconductor structure to a mounting, the growth substrate is removed; wherein said semiconductor structure has a p-type contact layer between said p-type region and said p-contact; and a portion of said p-type contact layer is doped to hole concentration of at least 5×1018 cm-3 to provide an electric contact.

EFFECT: low power consumption, small size and high reliability.

15 cl, 7 dwg

FIELD: physics.

SUBSTANCE: semiconductor light-emitting device has a semiconductor structure having a light-emitting layer between an n-type region and a p-type region; a reflecting metal contact on the lower side of the semiconductor structure and electrically connected to the p-type region; a material between at least a portion of the reflecting metal contact and the p-type region. The difference between the refraction index of the material and the refraction index of the p-type region is at least equal to 0.4; wherein at least a portion of the upper side of the semiconductor structure is textured; the distance between the textured portion of the upper side of the semiconductor structure and the reflecting metal contact is shorter than 5 mcm; the semiconductor structure includes cavity resonators filled with metal, the cavity resonators direct first light, incident at a first angle of incidence, towards second light incident at a second angle of incidence, the second angle of incidence being less than the first angle of incidence; a first set of cavity resonators contains metal which is in contact with the reflecting metal contact and has side walls which are completely coated with a dielectric material for insulating the first set of cavity resonators from the n-type region; and a second set of cavity resonators has side walls which are partially coated with a dielectric material such that the metal is in contact with the n-type region and insulated from the p-type region and the reflecting metal contact. A second version of the semiconductor light-emitting device is also disclosed.

EFFECT: disclosed devices can increase output of light emitted at sliding angles of incidence.

15 cl, 15 dwg

FIELD: chemistry.

SUBSTANCE: invention relates to molecular complexes of zinc and cadmium bis(1-phenyl-3-methyl-4-formyl-5-pyrazolonate) with amino-derivatives of nitric heterocycles of general formula (I) (NH2-Het)n, where NH2-Het is 1-aminoisoquinoline, 3-aminoquinoline, 6-aminoquinoline, 5-amino-4,6-dimethylquinoline, 2-aminopyridine, 2-amino-5-bromopyridine, 3-amino-5-methylisoxazole, 2-amino-1-ethylbenzimidazole, M is Zn, Cd, n=1, 2.

EFFECT: molecular complexes of formula (I) exhibit luminescent properties in the blue region of the spectrum and can be used as phosphors for making organic light-emitting diodes of white and visible light.

14 ex

FIELD: electricity.

SUBSTANCE: conversion element includes ceramic material with multiple pores, which is provided at least for partial absorption at least of one primary emission and for conversion of primary emission at least to one secondary emission, where conversion element has the density that is more than or equal to 97% of theoretical density of solid state of ceramic material, and pores in conversion element have the diameter mainly of 200 to 5000 nm.

EFFECT: conversion element has improved luminous characteristics, luminous efficiency and transparency.

12 cl, 11 dwg

FIELD: chemistry.

SUBSTANCE: liquid compound having intense fluorescence contains a product from reaction of at least one reactive polymer containing fluorophore, which contains a polyamine link of formula NCH2CH2N if needed, and at least one unsubstituted or substituted arylisocyanate or unsubstituted or substituted aliphatic or cycloaliphatic isocyanate with isocyanate index of approximately 100 or less. The reactive polymer has molecular weight between approximately 250 and approximately 40000 Da and between 1 and 8 active hydrogen atoms per molecule of the polymer.

EFFECT: obtained compound fluoresces in the UV, visible or near infrared region, is colourless and is compatible with various materials.

31 cl, 1 tbl

FIELD: chemistry.

SUBSTANCE: invention relates to ecological chemistry as applied to detection of oil products in elements of aquatic ecosystems. The unified mixture of hydrocarbons has the following composition (wt %): hexadecane 37.60, isooctane 33.80, benzene 28.57, fluoranthrene 0.03.

EFFECT: increased reliability and accuracy of monitoring oil contamination.

2 ex, 5 tbl

FIELD: chemistry.

SUBSTANCE: oxide scintillation monocrystals are designed for devices for X-ray computed tomography inspection through illumination with radiation. A Pr-containing monocrystal based on fluorides, specifically a Pr-containing oxide monocrystal of the garnet type, a Pr-containing oxide monocrystal of the perovskite type and a Pr-containing monocrystal of the silicate oxide type, as well as a Pr-containing rare-earth metal oxide monocrystal are proposed.

EFFECT: scintillation monocrystals have high density, high level of optical emission, short mean life and low cost of production.

39 cl, 18 ex, 43 dwg

FIELD: chemistry.

SUBSTANCE: present invention relates to compositions containing electroconductive organic materials. Described is a composition for making hole injecting holes or hole transporting layers in electroluminescent devices, organic solar cells, organic laser diodes, organic thin-film transistors or organic field effect transistors or for making electrodes or electroconductive coatings containing a polythiophene derivative, distinguished by that it contains a polythiophene derivative in form of at least one polythiophene containing a repeating unit with general formula (I): where X represents -(CH2)x-CR1R2-(CH2)y -, where R1 represents -(CH2)s-O-(CH2)p-R3-, where R3 represents SO3-M+, where M+ represents H+, Li+, Na+, K+, Rb+, Cs+ or NH4+, s equals 0 or 1 and p equals 4, R2 represents hydrogen, x equals 1 and y equals 0 or x equals 1 and y equals 1, and at least one more SO3-M+ containing polymer group, where M+ represents H+, Li+, Na+, K+, Rb+, Cs+ or NH4+, where mass ratio of polythiophene(s) to the said polymer equals 1 : (1-30). Also described is an electroluminescent device containing at least two electrodes from which if necessary at least one is deposited on an optionally transparent substrate, at least one emitter layer is deposited between both electrodes and at least one hole injecting layer is deposited between one of the two electrodes and the emitter layer, where the device is distinguished by that the hole injecting layer contains the above describe composition. An organic light-emitting diode containing the said electroluminescent device is also described.

EFFECT: longer service life, increased illumination intensity of electroluminescent devices and the light-emitting diode.

15 cl, 6 ex

FIELD: physics, photographic material.

SUBSTANCE: invention can be used when manufacturing trimming, construction material, and marking material. A transparent base material with percentage mass between 7% and 95% and viscosity of 1 Pa*s (at 20°C) or more, a photoluminescence pigment with average particle size of 150-2000 mcm or a mixture of this pigment with some other pigment, and a transparent filler are mixed. The mass ratio of the photoluminescence material to that of the pigment does not exceed 3.0. Mass ratio of the transparent filler to that of the transparent base material lies in the interval between 0.1 and 6. The transparent base material used can be gum, glass, or both. The obtained paste, construction mixture or viscous mass is hardened into a shape. The highly effective photoluminescence material can sustain light intensity of 3 mCd/m for more than 8 hours.

EFFECT: highly effective photoluminescence material is obtained.

15 cl, 9 tbl, 9 ex

FIELD: electronic engineering.

SUBSTANCE: invention relates to manufacture of gas-discharge indicator panels and provides a method for preparing pastes used to form elements of gas-discharge indicator panels, which method comprises preparation of filler powder, reduction from solution, and washing with organic solvent having boiling temperature T1=100-200°C. This solvent may be the same as is used in organic binder composition and, when another solvent is used, the latter is selected from those having boiling temperatures T2 meeting the following inequality: T1 ≤ 0.8T2.

EFFECT: enabled formation of gas-discharge indicator panels with high resolution level.

3 cl

FIELD: microelectronics; production of light-emitting diodes.

SUBSTANCE: the invention is pertinent to microelectronics and may be used in production of light-emitting diodes. Electroluminescent polymeric nanocomposite material contains 50-99.5 mass % of polymer - water-soluble polyphenylamine with electron-hole conductance, and 50-0.5 mass % of an electroluminescing organic ingredient in the form of J- component units - a cyanine dye, a squaryl dye or a porphyrin. For production of the electroluminescent material first solve polyphenylamine in water, then introduce a powder of the indicated dye. Formation of J- component units fix according to a change of the solution color. Produced nanocomposite material is applied on the current-conducting substrate, dried. Then apply a layer of a metal-cathode. The invention allows to produce electroluminescent layers with a band of electroluminescence from 400 up to 1600 nm having high characteristics, for instance, luminance and efficiency.

EFFECT: the invention ensures production of electroluminescent layers with a band of electroluminescence from 400 up to 1600 nm having high luminance and efficiency.

6 ex

The invention relates to experimental methods of nuclear physics and can be used to create systems for marking and identifying objects

FIELD: chemistry.

SUBSTANCE: method involves preparing a nanosuspension by adding carbon nanotubes to a reactive plastic binder with ultrasonic exposure in a cavitation zone with intensity of 15-25 kW/m2. Carbon nanotubes are dispersed in the binder with simultaneous photographic recording of changes in colour intensity of the nanosuspension. When the nanosuspension reaches colour intensity values corresponding to standardised dispersion values in the range of 0.9 to 0.99, ultrasonic exposure is stopped.

EFFECT: method enables to optimise dispersion of carbon nanotubes in the binder and cut the duration of preparing high-strength nanocomposites owing to uniform distribution of nanoparticles in the nanocomposite.

3 dwg

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