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Semiconductor device with negative resistance (versions). RU patent 2513644.

IPC classes for russian patent Semiconductor device with negative resistance (versions). RU patent 2513644. (RU 2513644):

H01L29/772 -

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FIELD: electricity.

SUBSTANCE: suggested device unites three field effect transistors into a unified vertical structure with channels of n- and p-type conductivity thus forming an electrical junction between them, at that the source of p-type channel is located opposite the source of n-type channel, and the source of p-type channel is located opposite the source of n-type channel. Sources of the channels are interconnected by a conductor and an additional zone with n⁺-type conductivity where the source of n-type channel is formed, and drains of the channels have separate outputs. The device can be equipped with one gate (three-terminal device - version 1) or two gates (four-terminal device - version 2) located at the other (second) lateral side of the channels. Current in the channels passes in one direction and creates back voltage in the junction thus locking the channels. The device can contain more than one structure, at that gates are common for neighbouring structures.

EFFECT: invention allows reducing dimensions, increasing operational speed, current and output power of the device.

4 cl, 6 dwg

The invention relates to the field of semiconductor electronics, namely, to devices with adjustable negative differential resistance, and can be used in many electronic devices and integrated circuits that are intended for the generation, amplification and conversion of electric signals modulated output signals.

Known vertical field-effect transistors (FETS), containing semiconductor substrate, Stoke (source) with n + -type conductivity, vertical conductive channels with n-type conductivity, shutter, made in the form of a metal tape, perforated within semiconductor structures, and the source (sink) with n + -type conductivity [1]. Between the gate and channel formed Schottky barriers. Transistor made from gallium arsenide (GaAs).

However, this instrument is used for vertical channels only n-type of conductivity.

Known vertical FRI [2], which has the backing of the n + -type conductivity, which is the source (sink) channel n-type of conductivity, metal shutters, placed on a non-conductive areas of the structure of the instrument and forming the Schottky barriers to the canals and drains with n + -type conductivity. In addition, on the same crystal additionally formed Schottky diode (LH)and contacts diode combined with the contact of source (sink) vertical PT, and the other contact LH is connected to contacts runoff (source) PT. Vertical FRI LH form a composite device.

However, this instrument is also used vertical channels only n-type of conductivity.

Known vertical FRI [3]containing metal output source, ohmic contact to the source, origin, made from semiconductor n + -type conductivity, vertical conductive channels with n-type conductivity, shutter, made in the form of a metal tape, perforated within semiconductor structures, and runoff of n + -type conductivity. Between the gate and channel formed Schottky barriers.

This device is also used vertical channels only n-type of conductivity.

The closest to the claimed device is a semiconductor device - lambda-transistor [4], which consists of three field-effect transistors depleted type that is selected as a prototype. Two of the transistor channel n - and p-type conductivity (complementary field-effect transistors) form lambda diode, and the third transistor is used to change the current instrument. It is usually placed between complementary transistors. The average transistor can have a channel with n - and p-type conductivity, and to the gate and serves the appropriate voltages to change the resistance of the channel. Complementary transistors are connected as follows: conclusion drain transistor with n-type channel connects to the conclusion shutter other transistor with a p-channel output flow which connects to the gate of the transistor n-channel, and the conclusions of the origins of complementary transistors connected with the findings of the drain and source middle of the transistor. To drain transistor n-channel serves positive voltage relative to drain transistor with a p-channel.

The main disadvantages of this device:

- the device consists of three separate field-effect transistors, so the size of the device is increased;

- cross-metal connections between the electrodes complicate the design of the instrument, especially when using a large number of individual structures.

The technical result of the invention is shrinking, improve performance and increase in the current and the output power of the device with an adjustable negative differential resistance.

Summary of the invention consists in that the device containing the channels with n - and p-type conductivity, closures, the sources and sinks of channels used vertical channels, which are parallel to each other. Moreover, the channels of contact between the sides, with electricity transition. A distinctive feature of the proposed device is the location of the source of the p-channel opposite the drain n-channel and drain p-channel - opposite the source of the n-channel. To connect the origins of channels between them formed an additional area with n + -type conductivity. The source of the p-channel is connected with additional area by using Windows Explorer, and the source of the n-channel placed directly on the additional areas. Wastewater channels have separate conclusions. Current TV takes place in one direction. Unlike lambda transistor in the proposed instrument there are no metal connection between the runoff canals and relevant gates. In the device of electric transition, locking channels, established directly between the channels, which simplifies the design of the device and reduces its size.

Gates formed on the other side of the channel and are located in non-conductive areas (dielectric). To manage resistance channels can be used Schottky barriers, structure metal-oxide or managers of p-n transitions. The thickness of the gate must match the length of the canal and may be sub-micron dimensions. To reduce the resistance shutter its thickness in the middle part can be greater than at the edges.

In the first case the device has only one gate to the channel with n - and p-type conductivity (three-electrode device). In a three-electrode unit using more than one single structure can be combined unit structures as follows: the channels of the same type conductivity, which is not formed closures, United in one common channel and he placed between channels with a different type of conductivity, with the formation of new joint structure.

In the second variant the gates formed to both channels (four-electrode device), and the second shutter can be used to adjust the settings of the device. In four-electrode unit using more than one single structure can be combined single-structures with common shutter to the channels of the same type conductivity neighboring structures.

Vertical structure provides the possibility of reducing the length of the channels that will improve the performance of the device. The device can have only one single structure or contain a sufficiently large number of individual structures, in this case, you can increase the current and output power of the device. In the proposed instrument merged three field-effect transistor in a single vertical structure, thus achieving the stated technical result.

On the figure 1 illustrates the possible variant of a single structure three-electrode of the device (option 1) and longitudinal section, the figure 2 is a cross-section of the instrument, on the figure 3 illustrates the possible variant of a three-electrode of the device with two new structures in the plan and longitudinal section. On figure 4 illustrates the possible variant of a single structure electrode of the device (option 2) the plan and its longitudinal section on figure 5 - cross section four-electrode of the device, in figure 6 shows a possible option four-electrode of the device with two single structures in terms and longitudinal section.

In the first option on the substrate 1 formed a single structure (figure 1), in the instrument channel 2 with p-type conductivity in contact with 3 channel n-type of conductivity. Source 4 p-channel is opposite flow 5 n-channel and runoff 6 p-channel - opposite the source 7 n-channel. Source 4 and runoff 6 p-channel have the p + -type conductivity and flow of 5 and 7 source n-channel have n + -type conductivity. Stoke 6 p-channel is connected to pin 8, and a flow 5 n-channel has pin 9. Istok 7 n-channel is located on the additional areas with 10 + n-type of conductivity. Source 4 p-channel connected to the inlet 7 n-channel with the area of 10 and conductor 11, which forms ohmic contacts with the area of 10 and a source 4 p-channel. Dielectric film 12 isolates the output flow 8 p-channel from the region 10. Conclusion runoff 9 n-channel is connected to the bus 13 a, and the output flow 8 p-channel - bus 14. Shutter 15 forms Schottky barrier with 3 channel n-type. The combination of shutter 15 with 3 channel produced using dielectric film 16. The shutter is connected to the bus 17. Bus 13 and 17 are located on the dielectric film 16 and bus 14 - on the substrate 1.

When using more than one individual patterns channels with p-type conductivity, which is not formed closures, United in one common channel and he placed between channels with n-type conductivity, forming a new structure (figure 3).

In the second case (figure 4-6) formed the second gate is 18 to p-channel 2, which also forms a Schottky barrier to channel 2. Shutter 18 formed on dielectric film 16. The gates of 15 and 18 are connected with tires 17 and 19 respectively. Conclusion runoff 8 p-channel is connected to the bus 14 and runoff 5 n-channel has a separate output 9. The merger of the two isolated structures made through the use of common shutter 18 to p-2 channels adjacent structures (figure 6).

The device works as follows. To drain 9 n-channel serves positive voltage U 0 relative runoff 6 p-channel (figure of 1.4). Using the n-3 channel and p-channel 2 will be current in one direction. The current creates a voltage drop on the n-channel U n , and p-channel U R . If not to take into account the voltage drops at discharge, river channels and area 10, U n +U p =U 0 . Electric switching between channels with n - and p-type conductivity is reverse voltage. The potential difference on the transition varies from U p in the lower part of the electrical switch between source 7 n-channel and runoff 6 p-channel to U n in the upper part of the transition between the runoff 5 n-channel and source 4 p-channel. Reverse voltage locks each channel from the source to the drain. In the General case U n is U p , but possible that U n =U p. But in any case at increase reverse voltage transition thickness of the depletion layer in each channel increases, which leads to a decrease in the thickness of the conductive part of the channel, therefore, with increasing U 0 current first grows highest, then due to the overlapping channels and increase their resistance, the current will decrease. When channels are fully overlap impoverished layers, the current will be determined by leakage currents shifted back transitions.

If you increase the opposite gate voltage resistance of the channel will increase, which may reduce the maximum current and voltage cut-off of the unit, when the current of the device will be minimal. Thus, in the instrument are shaped volt-ampere characteristics of lambda transistor.

In the first variant of the device when using more than one single structure (figure 3) in each new structure for n-channels 3 and p-channel 2 will leak currents in the same direction. The origins 7 n-channels in each of the new structure are interconnected with the help of the created area of 10, so the voltage drops on the n-channel U n will be the same (currents in n-channels in General may not be equal). The current p-channel equal to the sum of the currents flowing in the neighbouring n-channels. For alignment values of resistance p-channel and General resistance n-channel you can, for example, to reduce the thickness of the n-channel or decrease the concentration of impurities in these channels.

In both versions of the device when using more than one single structure (figures 3 and 6) valves are common to neighboring structures and channels with the same type of conductivity is placed symmetrically in relation to the gates.

The device can be made of silicon or from semiconductor III A B V , with a higher electron mobility.

In comparison with the prototype of the proposed instrument with a vertical structure and arranged in parallel n - and p-channels, in which the current flows in one the direction will allow:

- to reduce and simplify the design of the device;

- to improve the performance of the device by reducing the length of the channels;

- to increase the current and output power when using more than one single structure in the device.

Sources of information

1. Hollis M.A., Bozler C.O., Nichols K.B., Bergeron N.J. Vertical transistor device fabricated with semiconductor regrowth. Patent # US 4903089 (A), IPC: H01L 29/80, Appl. 02.02.1988 year, publ. 20.02.1990,

2. Brar B.P.S., W. Vertical field-effect transistor and method of forming the same. Patent # US 7663183, Appl. 19.06.2007,, publ. 16.02.2010,

3. Semenov A.V., Khan AV, Khan V. Vertical field transistor. Patent № RU 2402105, IPC: H01L 29/772, Appl. 03.08.2009 year, publ. 20.10.2010,

4. Lambda diode - multifunctional device with negative resistance. Gcano, Chivasso, Tekagi, Iterate. Electronics. - 1975, T, №13 - p.48-53.

1. Semiconductor device with negative resistance (options), containing the channels with n - and p-type conductivity, closures, the sources and sinks of channels, characterized in that the device uses vertical channels with n - and p-type conductivity, contact between the sides, while the source of the p-channel located opposite drain n-channel, and the flow of p-channel - opposite the source of the n-channel sources channels are connected using Windows Explorer and additional areas with n + -type conductivity, which formed the source of the n-channel and wastewater channels have separate conclusions, and in the instrument can be a single button (option 1) or two gates (option 2).

2. The device according to claim 1, characterized in that in the first version shutter formed on the side n-channel and p-channel, which does not contact with the channel with a different type of conductivity, and if there is more than one single structure in the device adjacent channels that do not formed closures, United in one common channel and he placed between channels with a different type of conductivity.

3. The device according to claim 1, characterized in that in the second variant the gates formed on the sides of the n-channel and p-channel, not in contact with channels with a different type of conductivity.

4. The device according to claim 1, characterized in that in both cases, if there is more than one single structure in the device closures are common to neighboring structures and channels with the same type of conductivity is placed symmetrically in relation to the gates.