Semiconductor device and method of its manufacturing

FIELD: electricity.

SUBSTANCE: semiconductor device comprises a thinned substrate of single-crystal silicon of p-type conductivity, oriented according to the plane (111), with a buffer layer from AlN on it, above which there is a heat conducting substrate in the form of a deposited layer of polycrystalline diamond with thickness equal to at least 0.1 mm, on the other side of the substrate there is an epitaxial structure of the semiconducting device on the basis of wide-zone III-nitrides, a source from AlGaN, a gate, a drain from AlGaN, ohmic contacts to the source and drain, a solder in the form of a layer including AuSn, a copper pedestal and a flange. At the same time between the source, gate and drain there is a layer of an insulating polycrystalline diamond.

EFFECT: higher reliability of a semiconducting device and increased service life, makes it possible to simplify manufacturing of a device with high value of heat release from an active part.

3 cl, 7 dwg

 

The group of inventions relates to the field of semiconductor technology, for example, powerful microwave transistors based on GaN, heterophony field effect transistors (NEMT), bipolar transistors (BJT), heterobipolar transistors (NW), p-i-n diodes, the diodes Schottky barrier and many others, as well as methods for their manufacture.

The creation of microelectronic and optoelectronic devices based on semiconductor compounds of group a3nitrogen (nitrides And3) is very important due to the significant expansion of functionality of these devices. In particular, there was a possibility of manufacturing of microwave field-effect transistors, the power of which is several times larger than the capacity of such transistors is made on the basis of traditional materials (arsenides And3). Simultaneously, the transistors on the basis of nitrides possess unique thermal resistance and can operate continuously at temperatures of 300-500°C, which was absolutely not available on traditional instruments.

However, a significant challenge in the industrial implementation of such a technical solution is a tendency nitride transistors to degradation, i.e. to the rapid change (deterioration) characteristics of the device over time. This degradation is observed during operation of the device and, moreover, recorded deterioration t is insisting semiconductor structures in the absence of electric current. It is shown that the mobility and the concentration of electrons in the nitride heterostructure arbitrarily change over time, and for several months these changes reach tens of percents (S. Elhamri et al. Study of deleterious aging effects in GaN/AlGaN II. Journal of Applied Physics, vol. 93, 2, pp.1079-1082, 15 January 2003).

In terms of the relevant work, i.e. current flows under the action of the applied voltage, the nitride transistors change their characteristics over several hours, which is unacceptable for real world applications.

Known field-effect transistors based on gallium nitride and aluminum structure which sequentially includes: a substrate, a GaN layer, the barrier layer consists of two sublayers: Alof 0.2Ga0,8N, it GaN; the second barrier layer - Alfor 0.3Ga0,7N, doped Si, it is unalloyed Alfor 0.3Ga0,7N. the structure is made contacts: drain, source and gate with appropriate intervals between them; it was further made of a dielectric coating MgO, SC2About3or SiNx. Between contacts dielectric coating is on the barrier layer and serves to protect the exposed surfaces of the barrier layer against external influences, see .Luo et al. The role of cleaning conditions and epitaxial layer structure on reliability of SC2About3and MgO passivation on AlGaN/GaN HEMTS, " Solid-State Electronics, 46, pp.2185-2190, 2002.

The disadvantage of this technical is th solution is that obtained through the protective layers, the level of degradation is quite high.

Currently, widespread instruments based heteropolyhedral epitaxial structure (HPS) type AlGaN/GaN.

Layers HPP applied epitaxial methods such as a method of chemical vapor deposition of ORGANOMETALLIC compounds (MOCVD), molecular beam epitaxy (MVE)method hydride epitaxy from the vapor phase (HVPE), and others. Unlike traditional semiconductor materials wide bandgap III-nitrides have a hexagonal type of crystal lattice and receive them in the form of thin heteroepitaxial structures on substrates with hexagonal lattice type. For this purpose, as a rule, use a substrate of sapphire (Al2About3), silicon carbide (SiC), bulk aluminum nitride (AlN) or gallium nitride (GaN), pseudo GaN substrate of silicon with an orientation plane (111) (Si(111)), and stocking GaN (or AlN) substrate, which can serve as one of the above (Compound Semiconductor. October 2004, 27-31).

The disadvantages of this method is the lack of reliable production of semiconductor devices, due to the low thermal conductivity of the substrate and superheat the working area of a semiconductor device.

In another known solution, h is the substrate, suitable for growing polycrystalline diamond, for example, of silicon, is grown thin (0.5 to 30 μm) layer of diamond on the growth surface which form a layer suitable for epitaxial growth, and the first layer of complex semiconductor. This layer may be a single crystal and can be selected from the group including Si, GaAs, SiC and Al2About3.

There may be additional second layer, complex semiconductor, including: AlxGayInzAsmPnNoSbkin which x, y, z, m, n, o, and k each has a value greater than or equal to zero and less than or equal to one and x+y+z=1, and m+n+o+k=1 where the second layer of complex semiconductor has a composition different from the first layer of complex semiconductor.

There may be additional buffer layer selected, for example, from the group consisting of HfN and AlN, and located between the base layer and the first layer of complex semiconductor.

There may be an intermediate layer selected from the group consisting of polysilicon, oxides of silicon, silicon nitride, silicon carbide, carbon, III-V semiconductors or combinations of them, and located between the diamond layer and the base layer.

The first layer of complex semiconductor contains AlxGayInzAsmPnNoSbkin which x, y, z, m , n and k each has a value greater than or equal to "0" and less than or equal to one and x+y+z=1, and m+n+o+k=1. The first layer of complex semiconductor may include GaN.

Known structure contains in order: silicon substrate, thermally conductive diamond layer, the monocrystalline silicon layer and the GaN epitaxial layer or a silicon substrate, thermally conductive diamond layer, polysilicon layer, the monocrystalline silicon layer and the GaN epitaxial layer, and a buffer layer selected from the group consisting of HfN and AlN.

Known structure has the option of bending up to 25 μm concave shape and up to 300 μm convex shape with the front side GaN (patent document U.S. No. 2006/0113545 Al, Jun. 1, 2006).

The main disadvantage of analog as follows:

- a thin layer of diamond (0.5 to 30 μm) limits the heat dissipation from the semiconductor structures and time-consuming processing (grinding and polishing). This is because the semiconductor structure is formed on the growth surface of the polycrystalline diamond, the height of the roughness reaches 10% of the thickness of the layer that is not possible to form a structure. With increasing thickness of the diamond layer to the structural thickness, for example up to 0.15 mm, the height of asperities will be 15 μm, which significantly increases the complexity and duration of treatment;

- ready structure has significant bending due to insufficient thickness of the diamond.

The closest analogue to Savino what the method is a technical solution described in the patent of the Russian Federation No. 2368031, 20.09.2009. A known method of manufacturing a semiconductor device includes growing on the base substrate, the polycrystalline diamond epitaxial auxiliary layers and epitaxial structure of a semiconductor device based on wide-gap III-nitrides. In this case, the surface of the base substrate to form an auxiliary epitaxial layers, one of which is the base for growing epitaxial structure of a semiconductor device based on wide-gap III-nitrides. Auxiliary epitaxial layers grown polycrystalline diamond, and after growing diamond base substrate is removed along with supporting the epitaxial layers to the base layer, on which is grown an epitaxial structure of a semiconductor device based on wide-gap III-nitrides.

The disadvantages of this method is the lack of reliable production of semiconductor devices, due to the low value of heat removal from the active part of the semiconductor device.

The aim of the present group of inventions is to eliminate the above disadvantages.

General technical result is achieved in increasing the reliability of the semiconductor device and increase its service life, as well as to simplify the method and who is agnosti making use of devices with a high value of heat removal from the active part.

The technical result is ensured by the fact that the semiconductor device includes a thinned substrate of monocrystalline silicon of p-type conductivity, oriented on a plane (111), made it a buffer layer of AlN, on top of which is made of heat-conductive substrate in the form of a deposited layer of polycrystalline diamond thickness equal to at least 0.1 mm, on the other side of the substrate is made of epitaxial structure of a semiconductor device based on wide-gap III-nitrides, the source of AlGaN, the gate, the drain of AlGaN, ohmic contacts to the source and the drain, the solder layer comprising AuSn, copper pedestal and flange. Between the source, gate and drain layer made of insulating polycrystalline diamond.

In accordance with a particular case of the implementation of the epitaxial structure includes an undoped layer of solid solution of GaN, undoped layer of solid solution AlGaN, undoped layer of solid solution AlGaN n-type conductivity and a layer of solid solution AlGaN.

The technical result is also achieved by the fact that the method of manufacturing a semiconductor device comprises applying to the flange of the layer of solder of AuSn, which sealed copper pedestal, the underlayer coating of the AuSn strengthened crystal of a semiconductor device to a copper pedestal OS, the discussion on the surface of the substrate a buffer layer of AlN, on the surface of which is grown thermally conductive layer of polycrystalline diamond, the thinning of the substrate. Next on the thinned substrate is grown epitaxial structure of III-nitrides. Then form the source, gate, drain, provide ohmic contacts to the source and the drain, on top of the crystal of the transistor, between the source, gate and drain is applied an insulating layer of polycrystalline diamond.

The group of inventions is illustrated by the following illustrations:

figures 1-4 illustrate the sequence of manufacture of the device;

figure 5 illustrates the semiconductor device;

6 shows the experimentally measured dependence of the temperature of heating of the active region of the microwave transistor from time to time;

Fig.7 shows the current-voltage characteristics of the semiconductor device.

A semiconductor device includes the following structural elements:

1 - flange;

2 - layer solder of AuSn;

3 - copper pedestal;

4 is a sublayer of the AuSn;

5 - substrate;

6 is a buffer layer of AlN;

7 - heat-conductive substrate;

8 - undoped GaN layer;

9 - non-alloy layer of solid solution AlGaN;

10 - non-alloy layer of solid solution AlGaN;

11 - layer solid solution AlGaN;

12 - source;

13 - gate;

14 - runoff;

15 - ohmic contacts;

16 is an insulating layer of polycrystalline diamond.

the Proposed device is produced as follows.

Figures 1-5 illustrate the sequence of manufacturing a multilayer epitaxial structure of a semiconductor device in both versions. On the flange of the brand MD-40 1, the thickness of 1600 microns put a layer of solder of AuSn 2 with a thickness of 25 μm, which is sealed copper pedestal 3 with thickness of ~150 µm. On top of the layer of copper is applied sublayer of AuSn 4 thickness of ~25 µm, which then serves as a basis for strengthening crystal transistor to the copper pedestal 3. As the substrate 5, is used, for example, monocrystalline silicon of p-type conductivity, is oriented according to the plane (111). On the surface of the substrate 5 is precipitated by a buffer layer of AlN 6. On the surface of the base substrate 5 with the layer 6 is grown thermally conductive layer CVD polycrystalline diamond 7 thickness ≥0,1 mm Layer of diamond grown in a microwave discharge on the install pack-SA-100 (microwave power of 5 kW, 2.45 GHz) using a reaction mixture of CH4(10%)/H2(88,5%)/O2(1.5 percent). Deposition conditions were as follows: the flow rate of hydrogen of 0.53 l/min, pressure in the chamber 95 Torr introduced into the chamber microwave power 4,6 kW, the temperature of the substrate 940°C. Even in the presence of stresses in tension and compression at the interface of the diamond-AlN arising from differences in thermal expansion of AlN and diamond after completion of the deposition of diamond on the epitaxial layer of AlN during cooling from the synthesis temperature to room, floor was the Chen satisfactory adhesion value of the polycrystalline diamond to AlN. After growing polycrystalline diamond substrate 7 5 plunge widely known methods macroscope etching to a thickness of 10 μm. Next on the substrate 5 are sequentially grown heteroepitaxial structure of III-nitrides consisting, for example, of non-alloy layer of solid solution of GaN 8, undoped layer of solid solution AlGaN space 9, undoped layer of solid solution AlGaN n-type conductivity 10, a layer of solid solution AlGaN (roof) 11. Then form a source 12, a shutter 13, a drain 14. Provide ohmic contacts 15 to the source 12 and drain 16. On top of the crystal of the transistor between the source, gate and drain is applied an insulating layer of polycrystalline diamond 16.

The advantage of the proposed technical solution is that all of the layers in the structures obtained using the well-known epitaxial techniques and does not require special processing technology and/or methods of joining layers, such as "Smart"technology. The semiconductor structure is formed almost on the surface of the substrate a large structural thickness of vysokoteploprovodnyh polycrystalline diamond. Eliminates the need for time-consuming and polishing of the diamond surface to a state suitable for technology thermoperiodicity layers in the further manufacture is allenii devices.

The advantage of the proposed technical solution is that all of the layers in the structures obtained using the well-known epitaxial techniques and does not require special processing technology and/or methods of joining layers, such as "Smart"technology. The semiconductor structure is formed almost on the surface of the substrate a large structural thickness of vysokoteploprovodnyh polycrystalline diamond. In addition, the presence of a layer of insulating polycrystalline diamond between the source, gate and drain provides additional heat dissipation from the active region of the device, while thermal resistance of the transistor structure is reduced in 1.5.

7. shows the experimentally measured dependence of the temperature of heating of the active region of the microwave transistor from time to time.

Use insulating layer of polycrystalline diamond on the surface between the source, gate and drain of the microwave GaN transistor increases the breakdown voltage of the transistor 30%.

Figure 7 shows the current-voltage characteristics of microwave GaN transistor:

a) without insulating layer of polycrystalline diamond on the surface of the crystal microwave transistor, between the source, gate and drain; (b) insulating layer of polycrystalline diamond on the surface of crystallochemistry, between the source, gate and drain.

1. Semiconductor device, comprising the thinned substrate of monocrystalline silicon of p-type conductivity, oriented on a plane (111), made it a buffer layer of AlN, on top of which is made of heat-conductive substrate in the form of a deposited layer of polycrystalline diamond thickness equal to at least 0.1 mm, on the other side of the substrate is made of epitaxial structure of a semiconductor device based on wide-gap III-nitrides, the source of AlGaN, the gate, the drain of AlGaN, ohmic contacts to the source and the drain, the solder layer comprising AuSn, copper pedestal and flange, between the source, gate and drain layer made of insulating polycrystalline diamond.

2. The device according to claim 1, characterized in that the epitaxial structure includes an undoped layer of solid solution of GaN, undoped layer of solid solution AlGaN, undoped layer of solid solution AlGaN n-type conductivity and a layer of solid solution AlGaN.

3. A method of manufacturing a semiconductor device, comprising coating the flange layer of solder of AuSn, which sealed copper pedestal, the underlayer coating of the AuSn strengthened crystal of a semiconductor device to a copper pedestal, the deposition on the surface of the substrate a buffer layer of AlN on the surface is the surface which is grown thermally conductive layer of polycrystalline diamond, the thinning of the substrate, further thinned substrate is grown epitaxial structure of III-nitrides, then form the source, gate, drain, provide ohmic contacts to the source and the drain, on top of the crystal of the transistor, between the source, gate and drain is applied an insulating layer of polycrystalline diamond.



 

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