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Device for controlling amplitude of high-voltage unipolar pulses. RU patent 2477563.

Device for controlling amplitude of high-voltage unipolar pulses. RU patent 2477563.
IPC classes for russian patent Device for controlling amplitude of high-voltage unipolar pulses. RU patent 2477563. (RU 2477563):

H03G3 - Gain control in amplifiers or frequency changers (gated amplifiers H03F0003720000; peculiar to television receivers H04N)
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FIELD: radio engineering, communication.

SUBSTANCE: disclosed is a device for controlling amplitude of high-voltage unipolar pulses, having an input and an output, a bipolar transistor whose emitter is connected to the output of the control device and the collector is connected to the conductor which is common for the entire device, a first resistor whose first lead is connected to the emitter of the bipolar transistor and the second lead is connected to the input of the control device, a second resistor whose first lead is connected to the emitter of the bipolar transistor and the second lead is connected to the conductor which is common for the entire device, a potentiometer whose first outermost contact is connected to a power supply and the second outermost contact is connected to the conductor which is common for the entire device, and a capacitor whose first lead is connected to the sliding contact of the potentiometer and the second lead is connected to the conductor which is common for the entire device. The device additionally includes a semiconductor diode whose anode is connected to the base of the bipolar transistor and the cathode is connected to the sliding contact of the potentiometer.

EFFECT: design of a device for controlling amplitude of high-voltage unipolar pulses, which provides a high dynamic range of signals at its output.

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The invention relates to the electrical engineering, in particular to the radar, and can be used in the systems of microwave generators on flood-span diodes and Hannah diodes.

Know the device controlling the pulse amplitude containing a p-i-n diode in parallel with the load [1, figure 6.2, and]. The disadvantage of this device regulation of the pulse amplitude is small range of regulated signals, limited pulse amplitude equal to 1...2 Century

It is also known device regulation amplitude unipolar pulse, which is simultaneously device protect the amplifier single-ended pulses from the mismatch on the output and overload input contains a current transformer, made on the basis of ferrite rings. The primary winding of the transformer is made in the form through a ferrite ring strip Explorer, the start of which is connected to the protected amplifier, and the end - to load the amplifier. The secondary coil is made of the filter on a ferrite ring wire, the first end of which is connected to the common to the amplifier and the feedback circuit of the conductor and the other end forms a second transformer output current. In the device also includes detector, the input of which is connected to the second output of the transformer, control block, the input of which is connected to the output of the detector, the resistor, the conclusions of which cover a ferrite ring on both sides and are galvanically connected among themselves, the bipolar transistor, the base of which is connected to the output of the block of management, a collector transistor is connected with the General for the amplifier and the feedback circuit of the guide, and emitter of transistor output forms of a feedback circuit is connected to the amplifier input [2]. The disadvantage of this device regulation of the pulse amplitude is small signal dynamic range at the output regulation, limited amplitude of the output pulses, equal to 10...15 V, due to the small maximum permissible voltage base-emitter modern transistors [3].

Closest to the claimed object, a maximum number of essential features for a device controlling the amplitude of the unipolar pulse containing the input and output device regulation, the bipolar transistor, the emitter of which is connected to the output device regulation, and the collector - General for the whole device conductor, the first resistor, the first output of which is connected with the emitter of the bipolar transistor, and the second output of the entrance control device, the second resistor, the first output of which is connected with the emitter of the bipolar transistor, and the second conclusion is common for the entire device conductor, potentiometer, the first extreme contact which is connected to the power source, and the second extreme contact with the General for all the device's guide, and a capacitor, the first output of which is connected with movable contact potentiometer, and the second conclusion - with common to the whole device conductor base bipolar transistor is connected to a flexible contact potentiometer [4, 2]. The control unit is part of a more complex object intended for operation in an arbitrary load and containing in its composition in addition to the control device is included consistently with him emitter repeater [4, 2].

The disadvantage of this device prototype is small signal dynamic range at the output, limited amplitude of the output pulses, equal to 10...15 V, due to the small maximum permissible voltage base-emitter modern bipolar transistors [3].

The task, which is aimed at achieving the proposed solution - the creation of devices for the adjustment of the amplitude of high-voltage unipolar pulse, providing a high dynamic range signal output (up to values many times exceeding the maximum permissible voltage base-emitter modern bipolar transistors).

This is achieved by a control unit amplitude unipolar pulse containing the input and output device regulation, the bipolar transistor, the emitter of which is connected to the output device regulation, and the collector is common for all device Explorer, the first resistor, the first output of which is connected with the emitter of the bipolar transistor, and the second conclusion - with the input of the control device, the second resistor, the first output of which is connected with the emitter of the bipolar transistor, and the second conclusion is common for the entire device conductor, potentiometer, the first extreme contact which is connected to the power source, and the second extreme contact with the General for all the device's guide, and a capacitor, the first output of which is connected with movable contact potentiometer, and the second conclusion is common for the entire device conductor, entered a semiconductor diode, the anode of which is connected to the base of the bipolar transistor, and the cathode movable contact potentiometer.

Figures 1 and 2 shows the circuit diagram of the proposed device regulation amplitude of high-voltage single-ended pulses and schematic layout of such a device.

The device controlling the amplitude of high-voltage unipolar pulse contains input and output devices, the bipolar transistor 1, the emitter of which is connected to the output device, and the collector is common for the entire device conductor, the first resistor 2, the first output of which is connected with the emitter of the bipolar transistor 1, and the second conclusion - with the input of the device, the second resistor 3, the first output of which is connected with the emitter of the bipolar transistor 1, and the second conclusion is common for the entire device conductor, potentiometer 4, the first extreme contact of which is connected with the source of the power unit and the second extreme contact with the General for all the device's guide, condenser 5, the first output of which is connected with movable contact potentiometer 4, and the second conclusion - with common to the whole conductor devices, semiconductor diode 6, the anode of which is connected to the base of the bipolar transistor 1, and the cathode movable contact potentiometer 4.

The device controlling the amplitude of high-voltage unipolar pulse works as follows. The movable contact potentiometer 4 is set to a constant voltage equal to the desired amplitude of pulses at the output of the device. In the initial condition of a semiconductor diode 6 closed. Therefore, constant voltage with the sliding contact potentiometer 4 is not served on the base of a bipolar transistor 1 and so can many times higher than the maximum allowable voltage base-emitter bipolar transistor 1. When applied to the input control device pulses with amplitude is less than the value of the DC voltage on the movable contact potentiometer 4, semiconductor diode 6 remains closed. Bipolar transistor 1 is also closed. In this case, the impulse given to the input of the device, easily passes on his way out and goes to the load that connects to the device, which is allocated impulse voltage equal to the amplitude of the input pulse less voltage to be allocated on the first resistor 2. The first resistor 2 introduced to limit current limit bipolar transistor 1 when it is opened. When applied to the input control device pulses with amplitude exceeding the value of DC voltage, installed on the movable contact potentiometer 4, semiconductor diode 6 opens, and on the basis of a bipolar transistor 1 establishes a voltage equal to the voltage on the movable contact potentiometer 4. Therefore, once the amplitude of pulse output control devices is equal to the voltage on the movable contact potentiometer 4, bipolar transistor 1 opens, preventing further growth of the pulse current in the load, because the voltage at the emitter of a bipolar transistor 1 can significantly exceed the voltage on its basis.

Transistor 1 figure 1 corresponds to the transistor VT1 in figure 2. Resistor 2 figure 1 corresponds to the resistor R2 in figure 2. Resistor 3-figure 1 corresponds to the resistor R3 figure 2. Potentiometer 4 figure 1 corresponds to the potentiometer R1 in figure 2. Condenser 5 figure 1 corresponds to the capacitor C1 in figure 2. Semiconductor diode 6 figure 1 corresponds to a semi-conductor diode VD1 in figure 2.

Experimental study of a model of the device regulation, circuit diagram of which is shown in figure 2, was performed using the powerful pulse amplifier described in [5] and allows to receive on an output pulse amplitude of up to 100 Century, The studies found that when working on a load device control allows you to change the voltage in the range from 3 to 100 Century When working on a standard 50 Ohm load impulse withstand voltage at the load is regulated within 3...76 Century model of the device regulation, implemented according to the scheme of the prototype, do not provide the impulse withstand voltage at the load of more than 17, due to the breakdown of transition base-emitter of the transistor.

The proposed device regulation amplitude of high-voltage single-ended pulses as compared with the device-the prototype provides a wider dynamic range signal at its output to the values, many times exceeding the maximum permissible voltage base-emitter modern bipolar transistors.

Sources of information

1. Picosecond pulse technique / .., Б.., ..Б and others, Ed. ... - M, Moscow: Energoatomizdat, 1993. - 368 C.

2. Titov A.A. Semenov A.V., Pushkarev VP Protection device amplifier single-ended pulses from overcurrent. / The patent of Russian Federation №2328818 - Publ. 10.07.2008. Bul. №19.

3. Petukhov V. M. Field and high-frequency bipolar transistors of medium and high power and their foreign counterparts: a Handbook. In 4 volumes. - M: Goblet-and, 1997.

4. A.A. Titov, Pushkarev CE Device management amplitude of high-power pulsed signals // telecommunications. - 2010. - №7. 44 - 46. - prototype.

5. A.A. Titov, Pushkarev VP, B. I., .., Yurchenko V.I. Pulsed microwave generator on Gunn diode // the Electronic equipment. Ser. SHF technique. - 2010. - Vol.№3. - P.38-46.

The device controlling the amplitude of high-voltage single-ended pulses containing the input and output device regulation, the bipolar transistor, the emitter of which is connected to the output device regulation, and the collector is common for the entire device conductor, the first resistor, the first output of which is connected with the emitter of the bipolar transistor, and the second conclusion - with the input of the control device, the second resistor, the first output of which is connected with the emitter of the bipolar transistor, and the second conclusion is common for the entire device conductor, potentiometer, the first extreme contact which is connected to the power source, and the second extreme contact with the General for all the device's guide, and a capacitor, the first output of which is connected with movable contact potentiometer, and the second conclusion is common for the entire device conductor, wherein it is additionally introduced a semiconductor diode, the anode of which is connected to the base of the bipolar transistor, and the cathode movable contact potentiometer.

 

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