Composition for photoactivated etching of silicon dioxode films. RU patent 2513620.
| Mulching composition (versions) / 2476479 Invention relates to agriculture, particularly a composition for mulching different types of soil, lawn and parking areas. The aqueous mulching composition contains lignosulphonate, carbamide, Na-carboxymethyl cellulose, potassium chloride, Andreaeopsida moss and Juniperus virginiana 'Erecta' juniper needles. Three versions of said composition are disclosed. |
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| Composition for removing photochemically polyvinyl alcohol-base tanned layer from printing form / 2316032 Invention proposes a polyvinyl alcohol-base oxidizing composition for removal of tanned polymeric layer that comprises the following components, wt.-%: sodium or potassium metaperiodate or sodium or potassium dihydro-ortho-periodate, 20-70; magnesium or calcium, or aluminum salt or salts, 20-70, and one or more crystalline organic acids, 5-50. Invention provides enhancing effectiveness of regeneration of net-stencil printing screens and to improve retention of oxidizing compositions. Invention is used for regeneration of netted-stencil printing screens prepared with use of photoresist materials. |
 Method and composition for reduction of ferric sulfide deposits in pipe lines (versions) / 2315799Proposed method consists in bringing the inner surfaces of pipe in contact with composition prepared from aqueous solution containing the compounds given in formula (I): , where X is anion whose valence "n" is selected from definite group and at least one amine selected from group including alkyl amines, dialkyl amines, alkylen diamines, cycloalkyl amines or their conjugates with acids. According to another version, use is made of composition containing tris(hydroxymnethyl) phosphine, at least one amine or its conjugate with acid and solvent. In presence of composition, fast complexation takes place; as a result, ferric sulfide deposits are dissolved and are removed from pipe. |
 Photopolymeric acrylic oligomer-oligomer composition, wear-resistant coating on organic glass for glasing elements of buildings, structures and vehicles based thereon and method of producing wear-resistant coating / 2458953Disclosed is a novel photopolymer acrylic oligomer-oligomer composition consisting of a bifunctional oligomer, an oligomer with functionality higher than 2, a monomer, a methyl methacrylate oligomer with molecular weight 20000-70000 and a polymerisation initiator, with the following ratio of components in pts.wt: acrylic bifunctional oligomer 15-95; acrylic oligomer with functionality higher than 2 15-70; acrylic monomer 0-25; methyl methacrylate oligomer with molecular weight 20000-70000 5-20; photopolymerisation initiator 0.1-1.0. Disclosed is a wear-resistant coating on organic glass, obtained via photochemically initiated three-dimensional radical polymerisation of the disclosed composition. Disclosed is a method of producing a wear-resistant coating on organic glass, involving a step for preparing a photopolymeric acrylic oligomer-oligomer composition and a step for curing thereof. The technical result is endowing resistance to formation of microcracks during ablation (silver resistance), low shrinkage and high adhesion to a coated substrate obtained via photopolymerisation of acrylic oligomer-oligomer compositions. |
| Acrylic lacquer for wooden articles / 2443742 Acrylic lacquer contains an acrylic copolymer dispersion Primal AC-4800ER, a coalescent additive Nexcoat NX-795, a wax additive Aquacer 502, Orotan 681 dispersant, a polyurethane thickener Acrisol RM-2020, a neutraliser - 20% aqueous ammonia solution, an antifoaming agent Nopko NXZ, a preservative Kathon LXE and water. |
 Acrylic paint composition (versions) / 2398807Acrylic paint composition in the first version contains an acrylic film-forming - acrylic organosoluble copolymer Polyform and a copolymer of p-butylmethacrylate with methylmethacrylate, silica filler, thickener - benton or pangel, plasticiser - phthalic ester, pigment and organic solvent. In the second version the acrylic paint composition contains an acrylic film-forming - acrylic organosoluble copolymer Polyform and a copolymer of p-butylmethacrylate with methylmethacrylate and additionally a polyorganosiloxane resin, silica filler, thickener - benton or pangel, plasticiser - phthalic ester, pigment and organic solvent. |
| Adhesive lacquer for polyvinylchloride / 2387686 Invention relates to adhesive lacquer for polyvinylchloride and can be used for depositing images on polyvinylchloride with subsequent deposition of coating varnish. The adhesive lacquer contains a synthetic resin - copolymer of methylmethacrylate with Tglass=124 °C and dynamic viscosity of the solution in toluene equal to 1500 mPa s, a volatile solvent - methyl ethylketone and toluene and an antistatic additive EFKA 6780 ("EFKA" Degussa). |
| Water-base lacquer coating composition / 2338766 Invention pertains to water-base lacquer coating materials, meant for depositing on metallic and non-metallic structures in construction, aviation technology and other industries. Description is given of the lacquer coating composition, which contains water-base aryl copolymer "ОЛД-04С" - a product of cohydrolysis of acrylic acid, methacrylic acid, methyl methacrylate, butyl acrylate and calcium (meth)acrylate in quantity of 100 wt %, pigments 50-205.1 wt %, silicone fluid 0.3-0.7 wt %, water 450-550 wt %. The pigments used in the proposed composition are in form of titanium dioxide, blue phthalocyanine pigments, blue anthraquinone, green phthalocyanine, yellow light resistant, red iron oxide, coloured refractory pigments, carbon black and or their mixture. The composition can also contain filler in form of talc, kaolin, modified nano-silicate and or their mixture in quantity of 7-93 wt %, and melamine phosphate in quantity of 1-5 wt % as a fire retarding agent. |
| Thermoregulating coating of "sollar reflector" type / 2331553 Proposed coating includes a lower layer of an aluminum alloy anodic oxide coating and an upper layer representing a thermo regulating paint coat comprising acrylate holmium-containing vanish "АКГ-1,2" (42-38 percent by weight) and oxide-modified zirconium (IV), 7-4 (58-62 percent by weight). The coating features low solar radiation absorption factor values (As ≤ 0,10-0,11) and high radiation factors (ε≥0,92-0,94). This allows reducing the radiator-emitter area which is particularly important in development of promising spacecrafts. Availability of two thermoregulating coatings, i.e. the anodic oxide and paint coatings allows a notable increase in service life of the said radiators and producing the said coatings on the surface of products made from aluminum or its alloys with lower As/ε parameter values and without drawbacks inherent in silicate coatings. |
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| Colored paint for the stencil printing on the internal side of the pressurized castings / 2298024 The invention is pertaining to the paint suitable for the stencil printing inside the pressurized castings. The invention describes the paint suitable for the printing films made out of the transparent thermoplastic, consisting predominantly of: a) one or several pigments; b) the binding in the solution in c) the organic solvent or in the mixture of the organic solvents, d) the routine auxiliary materials, if it is desirable, at that as the binding use the copolymer of the poly-(metha)-acrylate containing (м1) from 50 up to 90 % to the mass of alkylmethacrtlate having from 1 up to 6 atoms of carbon in the ethereal radical; (м2) from 5 up to 25 % to the mass, at least, one vinylaromatic compound; (м3) from 1 up to 25 % to the mass of maleic anhydride, and if it is desirable, (м4) from 0 up to 5 % to the mass of the alkylacrylate having from 1 up to 6 atoms of carbon in the ethereal radical or the copolymer of the poly-(metha)-acrylamide containing polymethylmethacrylate with the degree of imidization from 65 up to 80 %, to 1 up to 15 mass % of methacrylic acid and from 1 up to 15 mass % of methacrylic anhydrade. At that the indicated copolymer has the softening temperature by VIKA (ISO 306 B) at least of 115°С. As the dissolvents use aliphatic, cycloaliphatic and aromatic hydrocarbons, ketones, esters, ethers, alcohols, phenoles or their mixtures. The invention also describes the film made out of the thermoplastic printed by the above described paint; the pressurized casting consisting of the film made out of the thermoplastic printed on the opposite side with the above described paint and supplied on this side with the layer of the thermoplastic coating. At that the indicated layer is applied by the operation of pressure die casting on the inside and at that the film and-or the plastic material for operation of the pressure die casting on the inside represents the copolymer of polymethylmethacrylate; and the method of production of the pressurized castings includes the following stages: a) stencil printing of the thermoplastic films by the above described method, b) the film molding, c) the pressurized castings on the inside on the stencil printed film side in the casting mould with the thermoplastic, and d) removal of the pressurized casting from the casting mould. The technical result of the invention: the paint is resistant to the action of the high pressures and temperatures during the operation of the pressurized casting on the inside, the image stencil printed by the paint has the stable color after long-term action of the atmospheric conditions. |
| Acryl composition for finishing work / 2287506 Invention relates to manufacturing acryl resins-base building composition materials used in internal and external finishing of compartments of industrial and civil designation, in particular, in making pouring flooring covers, protective and finishing materials and pouring compounds. Acryl composition for finishing works comprising a binding agent, quarts sand as a filling agent, plasticizing agent, hardening agent and water involves 40-60% aqueous dispersion of copolymer of butylacrylate, methylmethacrylate and methacrylic acid as a binding agent, tributyl phosphate as a plasticing agent, Portland cement M400 as a hardening agent and, additionally, it comprises acryl-urethane thickening agent of associative type "Polifob TR-117" wherein components are taken in the following ratio, wt.-%: 40-60% dispersion of copolymer of butylacrylate, methylmethacrylate and methacrylic acid, 15.0-30.0; acryl-urethane thickening agent of associative type "Polifob TR-117", 0.1-0.2; quartz sand, 35.0-50.0; tributyl phosphate, 0.15-0.25; Portland cement M400, 8-12, and water, the balance. The composition can comprise additionally pigment in the amount up to 11 wt.-%. Invention provides enhancing mechanical strength of cover, its adhesion to surface and decreasing water absorption. |
| Composition of shock-absorbing material / 2510872 Invention relates to field of chemistry, in particular to compositions, based on polyorganosiloxane for application as shock-absorbing material, absorbing shock mechanical energy in vehicles, mechanisms, apparatuses, operating on earth, in air and space. Composition of shock - absorbing material contains polydimethyldiphenylsiloxane caoutchouc of general formula HO[(Me2SiO)n(Ph2SiO)m]kH, where n, m represent molar content of links, n+m=100 when m=4÷12, k=33÷69, boric acid or its ether, iron oxide, titanium dioxide as semi-reinforcing filling agent, wollastonite as reinforcing filling agent, magnesium oxide as thickening agent, and talc and fluoroplast as antiadhesive components. |
| Butadiene-methylstyrene rubber based rubber mixture / 2507225 Invention relates to the rubber industry and can be used in making industrial rubber articles. The butadiene-methylstyrene rubber based rubber mixture contains sulphur, diphenyl guanidine, a vulcanisation accelerator, technical carbon, zinc oxide, stearic acid, an anti-ageing agent and a modifier. The vulcanisation accelerator used is sulphenamide Ts, the anti-ageing agent and modifier are 2-(dibutylaminomethyl)-4-methyl-6-(1,7,7-trimethylbicyclo[2.2.1]hept-exo-2-yl)phenol. |
| Composite polymer material for deck and floor coatings / 2507223 Invention relates to high-strength composite polymer materials for deck and floor coatings. The composite polymer material, which is a rubber mixture processed by a moulding technique, contains a polymer matrix, a vulcanising system consisting of thiuram, altax, zinc oxide and stearic acid, filler and process additives. The polymer matrix used is a petrol-, oil- and ozone-resistant polymer which is modified with polyvinyl chloride and contains 26-34 wt % acrylonitrile, and additionally sulphur, sulphenamide and polymerised 2,2,4-trimethyl 1,2- dihydroquinoline. The filler consists of BS-100 silicon dioxide, pigment titanium dioxide, natural hydrophobic chalk in weight ratio of 35-115:4-20:5-50 pts.wt, respectively. The process additives include TGM-3 oligoester acrylate plasticiser and antipyrenes which contain antimony trioxide and zinc borate in ratio of 3-20:5-25, and N-cyclohexyl thiophthalimide. |
| Fire-resistant rubber mixture / 2507220 Invention relates to a fire-resistant rubber mixture and can be used in car, oil and industrial rubber industry. The fire-resistant rubber mixture contains synthetic isoprene and diene rubber, polyvinyl chloride, sulphur, sulphenamide Ts, zinc oxide, stearine, technical carbon, monoethanolamine, naphtham-2, diaphene FP, N-nitrosodiphenylamine, oxanol KD-6, antimony trioxide, chlorinated paraffin XP-70, chlorinated paraffin XP-470 and borates. |
| Photoactivated composition for etching silicon nitride films / 2507219 Invention relates to production of integrated microcircuits and other electronic devices which use a plenary manufacturing technique based on photolithographic processes. The photoactivated composition contains a polymer base and a photosensitive component. The polymer base is polymethyl methacrylate and the photosensitive component is ammonium fluoride. The composition further contains a protophilic reagent - α-naphthylamine and solvents - acetone and trifluoroacetic acid. Components are in the following ratio, wt %: polymethyl methacrylate - 11.8; ammonium fluoride - 4.7-7.1; α-naphthylamine - 18.3; acetone - 8.3-10.7; trifluoroacetic acid - 54.5. Use of the composition simplifies the technological process of obtaining photoetched pattern in a silicon layer, while excluding development, baking and wet chemical etching steps. |
 Device for production of diffusion polymer membranes / 2504429Invention relates to membrane technologies and can be used in food, chemical, petrochemical industries, etc, for cleaning and separation of different process fluids. Proposed device comprises first reaction chamber with impeller connected via pump with second reaction chamber. Second reaction chamber incorporates bin for feed of extra component and ultrasound wave radiator for activation of polymer composition. First, composition is produced inside first reaction chamber at mixing polyvinyl alcohol, water and fullerenol C60-(OH)22-24. Then, it is fed into second reaction chamber wherein fed in extra component, a maleic acid, is fed to activate the mix. Composition produced in second reaction chamber is used to form the membrane on the substrate to be fed into drying chamber for heat treatment. Produced membrane features transport properties, efficiency and selective extraction of water from water-containing mixes. |
| Wear resistant rubber based on propylene oxide rubber and ultra-fine polytetrafluoroethylene / 2502759 Rubber mixture based on propylene oxide rubber SKPO contains sulphur, stearic acid, zinc oxide, thiuram disulphide, technical carbon P-803, dibenzothiazole disulphide, phenyl-β-naphthylamine, dibutoxyethyl adipate, ultra-fine polytetrafluoroethylene. |
| Butadiene-nitrile rubber based rubber mixture / 2501820 Invention relates to rubber industry, particularly production of rubber mixtures used to make articles for various purposes, including packer elements (rubber sealers in oil or gas wells), used in production of packer and anchor equipment. The rubber mixture contains the following ingredients, pts.wt (per 100.00 pts.wt rubber): paraffinate butadiene-nitrile rubber BNKS-40 AMN 100.00, with weight content of acrylonitrile of up to 41%, dicumyl peroxide (Perkadox BC-FF) - 3.0-4.0, vulcanisation coagent Deltagran HVA 2 70 GT - 1.0-3.0, zinc oxide - 3.0-5.0, antioxidant Irganox 1010 - 2.0-3.0, oligoester acrylates TGM-3 - 6.0-10.0, active technical carbon H-220 - 50.0-70.0, technical carbon T-900 - 10.0-30.0, dispersant zincolet BB 222 1.0-3.0, anti-scorch Santogard PVI - 0.3-0.5. |
FIELD: chemistry.
SUBSTANCE: invention can be used in producing integrated microcircuits and other electronic devices which use a planar manufacturing technique based on photolithographic processes. The composition for photoactivated etching of silicon dioxide films includes a polymer base - polymethyl methacrylate, a photosensitive component - ammonium fluoride in trifluoroacetic acid solution, a solvent - acetone, a protophilic agent - diphenylamine.
EFFECT: invention simplifies the process of producing a photoetched pattern on a silicon layer, increases the rate of photoetching and significantly reduces defects in the obtained articles.
1 tbl, 4 ex
The invention relates to the field of microelectronics, in particular the production of integrated circuits and other electronic devices using planar photolithography.
Known photopolymerizable compositions for dry film photoresist, which are used to get the picture in the manufacture of printed circuit boards in electronic industry (RF patent №2163724, 7G03C 1/72, H01L 31/08, publ. 2001.02.27). Known composition includes a copolymer of styrene with mono-n-butylmalonate, disfunctionally acrylate, 1-chloro-2-hydroxy-3-methacryloyloxyethyl, inhibitor, photoinitiator, dye and compounds glycol. The disadvantage composition is its multi-component structure which requires the introduction of photoinitiators for the implementation of photochemical reactions.
Known photolithography process without the use phase of manifestation, which implements the dry transfer of the image to resist Si02 through a reaction between silicon dioxide with pairs of HF at temperatures above 100 degrees C. As catalysts in the process of etching compositions use organic bases and peroxide compounds affecting the mechanism of etching process (the Study of the reaction of etching on the border of silicon dioxide film resist in the photolithography process without the stage of manifestation. Studies on the interfacial etching reaction of development-free vapor photolithography/Hong Xiaoyin, Lu Jianping, Duan Shengquan, Chen Qidao, Wang Peiqing // J.Vac.Sci. and Technol. B. - 1999. - 17, 5. - C.2090-2095). For the process substrate covered with a film of photopolymer based cinnamate containing 5-nitroacenaphthene as photosensitive component and catalyst etching. The known method of lithography allows to exclude the operation of manifestation and zadabrivaniya photoresist.
The disadvantage of the composition is a need to introduce in its composition of catalysts, as well as the impossibility of using the composition for photolithography process to avoid a stage etching, which involves feeding into the system of toxic hydrogen fluoride HF at elevated temperatures.
Famous photo composition for etching films of silicon dioxide without using stages of manifestation, zadabrivaniya and etching, based on the reaction of donor-acceptor interaction in non-aqueous solvents using as photoactive light-sensitive component the ammonium fluoride and as profiling reagent and at the same time solvent for polymer base of poly used pyridine (Photo composition for etching films of silicon dioxide. RF patent №2330049). The song is selected as a prototype.
The disadvantage of the composition is a small etching rate (0,26 micron/min), and the use of toxic solvent - pyridine.
The objective of the invention is development of a composition for photo etching films of silicon dioxide SiO2 in the photolithography processes high speed etching, which leads to simplify the process of obtaining photolithographic figure in the silicon layer and a significant decrease in defects of the products obtained.
The problem is solved by the fact that, as in the prototype, a composition for photo etching films of silicon dioxide includes polymer base polymethylmethacrylate (PMMA) and photosensitive component, the ammonium fluoride in solution triperoxonane acid, but unlike the prototype as a solvent uses a secure acetone, and as profiling reagent - diphenylamine in the following ratio of components, mass%: polymethylmethacrylate of 5.6-6.5; ammonium fluoride 4,0-4,6; diphenylamine 16,6-19,2; acetone 45,3-52,2; triperoxonane acid 21,3-24,6.
The main feature of the new photo of the composition is the release of F-ions at the expense of donor-acceptor interaction NH 4 + -acid and profiling agent diphenylamine coming from ammonia emissions (equation 1):
Anion F - is released into the system in the future when the UV-irradiation formed active anion-radicals of fluorine, which poisoned the film silicon dioxide (equation 2, 3):
To carry out the invention take the components mass ratio presented in the claims.
Below is a staged preparation of solutions a, B and C that are required for obtaining a composition for photo etching.
Example 1. First, prepare a solution And for what take out a portion of about 0.50 g methyl methacrylate) PMMA and fill approximately 5.0 ml of acetone. Mix carefully mix with a glass rod and stand before full dissolution PMMA (about 24 hours). Then in the solution And injected approximately 1.50 g of diphenylamine, mixed with a glass rod about 30 minutes before full dissolution of diphenylamine and get a solution B.
For preparation of a solution To take a sample of approximately 0.34 g of ammonium fluoride NH 4 F, pour in 1,48 ml triperoxonane acid CF 3 COOH and carefully mix. Thus, there is a heating of the mixture, in 3-5 minutes there is the complete dissolution NH 4 F.
Solution B poured to the solution and mix. Thus there is little heating of the mixture and increases the viscosity of the solution. The resulting composition for photo etching stand for 1-2 hours before full dissolution of all components. The claimed composition for photo etching films of silicon dioxide when one of quantitative combinations of the components are ready. After cooking composition keeps its characteristics within a month.
The following are examples illustrating the use of the invention.
Example 2. On a silicon wafer with the SiO2 layer with thickness of 0,35 microns, cleansed in ethyl alcohol from dirt, put a pipette 1 drop by photo compositions, prepared according to example 1. The irradiated plate under the lamp DRL-250 to the full release of the film of silicon dioxide that is time-45 with irradiated spot wash with acetone using cotton swabs, watching the complete removal of SiO 2 .
The speed V photochemical etching in example 2 is 0.47 micron/min At the same time determine the velocity of chemical etching, going without UV-irradiation. She is negligible and is 0.02 mm/min In the future, the contribution of this component is ignored.
Example 3. Prepare solutions a and B in example 1. For preparation of a solution To weigh 0,32 g of ammonium fluoride NH 4 F and pour 1.5 ml triperoxonane acid CF 3 COOH, carefully mix. Thus, there is a heating of the mixture, in 3-5 minutes there is the complete dissolution NH 4 F. Solution B and C are mixed and incubated for 1-2 hours before full dissolution of all components. On a silicon wafer with the SiO2 layer with thickness of 0,35 microns, cleansed from impurities in alcohol, put a method of irrigation 3 ml obtained songs for photo etching. Then the plate is exposed under the lamp DRL-250 irradiated spot with a cotton swab wash with acetone to remove SiO 2 , which occurs for 37 seconds.
The speed V photochemical etching in example 3 is 0,56 microns/min
Example 4. Prepare solutions a and B in example 1. For preparation of a solution To weigh 0,34 g of ammonium fluoride NH 4 F, pour triperoxonane acid CF3COOH (1.5 ml), mix thoroughly. Thus, there is a heating of the mixture, in 3-5 minutes there is the complete dissolution NH 4 F. Cooked solution B poured to the solution, the solutions are mixed, maintain within 1-2 hours before full dissolution of all components. On a silicon wafer with the SiO2 layer with thickness of 0,35 microns, cleansed from impurities in alcohol, put a pipette 1 drop obtained songs for photo etching. The irradiated plate under the lamp DRL-250 to the full release of the film silicon dioxide, which occurs in 30 C. Irradiated spot wash with acetone using cotton swabs, watching the complete removal of SiO 2 .
The speed V photochemical etching in example 4 is 0,70 micron/min
TableComparative data on speed etching of the invention and the prototype presented in the table.
The concentration of ammonium fluoride NH 4 F, g/ml
0,035 0,049 0,052The etching rate V, mm/min
according to the invention
0,47 (example 2)
0,56 (example 3)
0,70 (example 4)
prototype
0,26 0,26settling in sediment
The data show that the etching rate of the composition according to the invention in 2 and more times higher in comparison with the composition of the prototype, particularly at high concentrations, which for the composition of the prototype unattainable.
The main advantage of the claimed invention is a significant increase in the rate of photoetching, to 0,70 micron/min compared with 0,26 micron/min in the prototype, which allows to reduce time of photoexposure. The use of a composition according to the invention maintains the dignity of the prototype: completely excluded stage of manifestation, zadabrivaniya and etching, which account for the largest number of defects and distortion of the circuit pattern. Etching S1O2 and destruction of etching products takes place at the stage of exposure. Preventing the use of toxic solvents pyridine and its utilization. Thus, photoetching using the claimed composition more effectively in the field of microelectronics.
Sources of information
1. RF patent №2163724, publ. 27.02.2001.
2. J.Vac.Sci. and Technol. Century - 1999. - 17, 5. - S-2095.
3. RF patent №2330049, publ. 27.07.2008. The prototype.
Composition for photo etching films of silicon dioxide, including polymer base polymethylmethacrylate, photosensitive component ammonium fluoride, triperoxonane acid and protofile reagent, wherein as profiling reagent used diphenylamine, and as solvent - acetone, in the following ratio of components, mass%:
Polymethylmethacrylate
5,6-6,5The ammonium fluoride
4,0-4,6Diphenylamine
16,6-19,2
Acetone45,3-52,2
Triperoxonane acid
21,3-24,6