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Method for assembly of high-power integrated circuit. RU patent 2267187.

FIELD: electronic industry, applicable in manufacture of high-power semiconductor devices and high-power integrated circuits, hybrid ones inclusive; the invention is mainly oriented to the assembly of high-power integrated circuits in metal-glass and metal-ceramic casings.

SUBSTANCE: the circuit leads are soldered by the group method and their main part is positioned on the same side on which the crystal is positioned, the preset remoteness of the free ends of the leads from the board is provided, in the process of soldering the variation of the distance between the components being soldered is controlled, on one installation designed for soldering out of inner conductors with a definite cross-sectional area, and/or on one installation designed for soldering of boards, and/or on one installation for soldering of crystals during one production cycle effected is respectively the soldering out of the inner conductors and/or soldering of boards, and/or soldering of crystals of various circuits, the possibility of simultaneous delivery of semifinished items different in type and/or class of the circuits is provided.

EFFECT: provided economically effective limited pliable production of high-power integrated circuits of a wide range.

IPC classes for russian patent Method for assembly of high-power integrated circuit. RU patent 2267187. (RU 2267187):

H01L27 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L0023000000, H01L0029000000-H01L0051000000; assemblies consisting of a plurality of individual solid state devices H01L0025000000)

H01L25 - Assemblies consisting of a plurality of individual semiconductor or other solid state devices (devices consisting of a plurality of solid state components formed in or on a common substrate H01L0027000000; assemblies of photoelectronic cells H01L0031042000)

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