Heterogeneous substance (heteroelectric) for acting on electromagnetic fields |
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IPC classes for russian patent Heterogeneous substance (heteroelectric) for acting on electromagnetic fields (RU 2249277):
 Thermometer system and method for manufacturing data integrated circuit for thermometer system / 2247442
Proposed thermometer system has data integrated circuit and external measuring circuit. Data integrated circuit has base that carries fast-response and lagging heat-sensing elements built around thermistors mounted on solid-body substrate and used for measuring temperature of medium and wall of location under check, respectively, as well as power leads for connecting heat-sensing elements to external measuring circuit. The latter is provided with comparison unit and display unit. Fast-response heat-sensing element is connected to first input of display unit and lagging one, to second input of comparison unit. Substrate is made of semiconductor material. Newly installed in external measuring circuit are adder as well as first and second transducer amplifiers. Fast-response heat-sensing element is connected to first input of comparison unit and to that of adder through first transducer amplifier. Lagging heat-sensing element is connected to second input of comparison unit through second transducer amplifier. Comparison unit output is connected to second input of adder and output of the latter, to input of display unit either directly or through switching unit. Method for manufacturing data integrated circuit includes formation of thermistors of fast-response and lagging heat-sensing elements on solid-body substrate, attachment of heat-sensing elements to integrated circuit base, and their connection to power leads of external measuring circuit. Thermistors are formed by applying thermistor layer onto semiconductor substrate followed by forming microprofiles. Metal is deposited on contact pads and the latter are connected to respective heat-sensing elements. Substrate section to suit location of fast-response heat-sensing element is removed or blind hole is etched therein and contact pads are connected to power leads embedded in integrated circuit base.
 Memory device and its manufacturing process / 2247441
Proposed memory device is built around memory locations incorporating memory transistor whose gate electrode is disposed on top end of substrate between source and drain regions and separated from semiconductor material by insulator incorporating memory layer between boundary layers. Gate electrode is disposed in groove made in semiconductor material between source and drain regions; memory layer is disposed at least between source region and gate electrode as well as between drain region and gate electrode. Each of gate electrodes passes current through conducting track that functions as word bus. Source and drain regions of one memory location function at the same time as drain and source regions of adjacent memory location, respectively. Word buses run across grooves.
 Contact-free integrated circuit / 2245591
Contact-free integrated circuit has to be functional analog of contact-free data descriptor working at different frequencies. The descriptors are used in software of electronic data turnover and for data protection. Peripheral part of contact-free integrated circuit that is used for contact-free communication with peripheral equipment through electromagnet radiation of central part. Peripheral equipment is responsible for data supply, data input and output according to preset protocol. Peripheral equipment has at least one photovoltaic semiconductor structure to transform incident electromagnet radiation of optical range to electric energy. The structure is connected to central part of contact-free integrated circuit at the side where power and data are applied. At the side of data output there are at least two voltage-controlled optically active structures to modulate reflected light radiation. Data exchange protocol corresponds to at least single-time scanning of photovoltaic and optically active structures by focused and modulated light beam. The structures are disposed on the path of the beam. Then radiation after being reflected by photovoltaic and optically active structures is subject to detection. Semiconductor laser of peripheral equipment can be used as light source.
 Semiconductor device having periodic electron-hole structure / 2245590
Proposed semiconductor device designed for use in semiconductor units that function to amplify and generate superhigh-frequency electromagnetic waves is characterized in that its electron-hole plasma injection elements are periodically disposed in silicon substrate and that its elements are intercoupled by electric fields and current carriers. Active elements of device structure have periodic electron-hole plasma structure whose continuous wave period corresponds to element disposition period.
 The reader on the charge-coupled devices for two-dimensional image receivers / 2239915
The invention relates to the field of integrated microelectronics and can be used in systems for optical information processing
 The reader with a time delay and accumulation of signals from multiple ir photodetectors / 2236064
The invention relates to the field of integrated microelectronics and can be used in systems for optical information processing
 Hybrid integrated circuit vhf range / 2235390
 The protection device electronic module / 2235389
The invention relates to housings for electronic devices, protected from unauthorized access.
 Photodetector / 2231169
The invention relates to a semiconductor optoelectronics, in particular to the design of receivers of light radiation
 Magnetic materials / 2244971
Memory element has nanomagnetic materials whose axial symmetry is chosen to obtain high residual magnetic induction and respective coercive force. This enlarges body of information stored on information media.
 The method of producing nanotubes vanadium oxide / 2240980
The invention relates to methods for new allotropic form of oxides, in particular, vanadium oxide, which can be used as catalysts, cathode materials, power sources, ion exchangers, in viscoelastic capacitors
 Infrared nonlinear optical material / 2231817
 The method of formation of silicon nanostructures, lattice silicon quantum wires and devices / 2173003
The invention relates to a method of formation of quasi-one-dimensional solid silicon nanostructures
Magnetic materials / 2244971
Memory element has nanomagnetic materials whose axial symmetry is chosen to obtain high residual magnetic induction and respective coercive force. This enlarges body of information stored on information media.
Heterogeneous substance (heteroelectric) for acting on electromagnetic fields / 2249277
Proposed substance related to materials acting on electromagnetic fields so as to control and change them and can be used for producing materials with preset optical, electrical, and magnetic characteristics has in its composition active-origin carrier in the form of clusters of atoms, nanoparticles, or microparticles, its insulating function being checked in the course of manufacture; this function is characteristic controlling interaction between substance and electromagnetic field.
 Electromagnetic radiation nanoamplifier / 2266596
Novelty is that metal, such as silver, nanoparticles whose plasma resonance frequency is close to frequency of transfer of mentioned active particles to inverted population level are additionally placed in prior-art amplifier on quantum (active) points.
 Sensor component incorporating nanomagnets / 2274917
Proposed sensor component that uses axial symmetry to impart magnetic properties to materials has magnetic material in the form of nanomagnets whose sides measure 40 - 500 nm and thickness is 3 - 10 nm; they function as zero-hysteresis superparamagnetic components.
 Semiconductor nano-structure with composite quantum well / 2278072
Semiconductor nanostructure contains quantum well with two-dimensional electron gas, made in form of layer of narrow-zoned semiconductor i-GaAs with forbidden zone Eg1 having thickness d1 and levels of dimensional quantizing Em1 - main and Ep1 - excited, sandwiched between two layers of semiconductor AlxGa1-xAs with forbidden zone Eg2>Eg1 and main level of dimensional quantizing Em2 having thickness d2 each, which is positioned between two barrier layers of wide-zoned semiconductor i-AlAs with thicknesses temperature and differentsp and forbidden zone Eg, one of which contains δ-Si layer of admixture at distance t* from hetero-boundary i-AlAs and i-AlxGa1-xAs, and second one consists of non-alloyed i-AlAs spacer and layer AlAs(Si) alloyed homogeneously by silicon and layer i-GaAs covering the nanostructure. In composite quantum well of semiconductor nanostructure, formed on poly-insulating substrate GaAs(Cr) in form of serial layers i-GaAs(buffer)/i-AlAs(δ-Si)/i-ALxGa1-xAs/i-GaAs/i-AlxGa1-xAs/i-AlAs. By special selection of parameters Eg>Eg2>Eg1 and relation d1/d2, condition Em2<Ep1 is maintained as well as localization of two-dimensional electrons with maximum in center of symmetry of composite quantum well on levels Em1 and Em2.
 Substrate coated with composite film, method of manufacture of such substrates and their application / 2288167
Proposed substrate is coated with composite film on base of meso-porous inorganic layer containing nano-particles forming in-situ inside layer. Composite film has structure of periodic lattice in larger part of layer where nano-particles are present; nano-particles are arranged in periodic pattern in domain scale in at least four periods of film thickness. This structure may be obtained from meso-porous inorganic layer of periodic structure in domain scale in at least four periods of pores forming matrix on substrate by settling of at least one precursor in pores of matrix layer and growth of particles obtained from precursor at monitoring spatial distribution and sizes of structure of matrix pores.
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FIELD: electronic engineering. SUBSTANCE: proposed substance related to materials acting on electromagnetic fields so as to control and change them and can be used for producing materials with preset optical, electrical, and magnetic characteristics has in its composition active-origin carrier in the form of clusters of atoms, nanoparticles, or microparticles, its insulating function being checked in the course of manufacture; this function is characteristic controlling interaction between substance and electromagnetic field. EFFECT: improved characteristics of heterogeneous substance. 25 cl
The invention relates to the field of electronic equipment, in particular to the materials affecting the electromagnetic field to control them and their transformations, and can be used to create materials with predetermined optical, electrical and magnetic characteristics. Known substance for influencing electromagnetic radiation [1] based on SiO2matrix doped semiconductor additives used for the production of optical filters. The disadvantage of this invention is the narrowness of its functionality impact on the electromagnetic (optical) radiation - only the transmission of one part of the spectrum of optical radiation and the absorption of the others. Also known heterogeneous substance - optical glass [2], selected as a prototype of the present invention, comprising a transparent SiO2matrix and filter additives in the form of nanoparticles of the metal. The disadvantage of this invention is the narrowness of its functionality exposure to electromagnetic radiation. This substance may not be used, for example, for efficient conversion of electromagnetic radiation into electric current, to reflect the electromagnetic radiation, and many other functions. The purpose of this izobreteny what is to eliminate these disadvantages and significant expansion of functionality of heterogeneous substances. This goal is achieved by the proposed heterogeneous substance called heterolactic, due to the fact that in the known substance, consisting of media and put into the specified carrier for the active agent, the specified active principle is a cluster of atoms, nanoparticles or microparticles (hereinafter may be used, the term particle) of a substance (or substances)other than the substance specified media entered in the specified media so that the characteristic (average) distance between these clusters, nanoparticles or microparticles is less than or of the order of the cubic root of the polarizability of these clusters, nanoparticles or microparticles in the substance of the specified media and the specified carrier is a solid and put him in these clusters, nanoparticles or microparticles are solid; or the specified storage medium is a semiconductor material, and put him in these clusters, nanoparticles or microparticles are metal; or the specified media is a dielectric substance, and put him in these clusters, nanoparticles or microparticles are metal; or the specified media is a semiconductor layers of n-type and p-type n-p junction between the at them; or substance of these nanoparticles is a semiconductor; or the specified media is a semiconductor polymer of n-type containing semiconductor nanocrystals p-type; or the substance of these nanoparticles is a superconductor; or the specified media is dielectric and the substance of these nanoparticles is dielectric; or the specified media is dielectric, and the substance of these microparticles is a ferroelectric; or the specified media is a ferroelectric and the substance of these microparticles is a ferroelectric; or the specified media is an opportunity inverse settling energy States, for example by adding impurity atoms; or the specified media is the dielectric liquid and the substance of these nanoparticles is metal; and also due to the fact that in the known substance, consisting of media and put into the specified carrier for the active agent, the specified active principle is a cluster of atoms, nanoparticles or microparticles of the substance (or substances)other than the substance specified media entered in the specified media so that there is at least one maximum in the frequency dependence of the polarizability of these clusters, nanoparticles or microparticles in a substance specified the nose of the body, moreover, the specified carrier is a solid and put him in these clusters, nanoparticles or microparticles are solid; or the specified media is dielectric; or the specified storage medium is a semiconductor material; or the specified media is a semiconductor layers of n-type and p-type n-p junction between them; or the specified media is a semiconductor polymer of n-type containing semiconductor nanocrystals p-type; or the specified media is an opportunity inverse settling energy States, for example by adding impurity atoms; or the specified media is liquid the dielectric; the substance of these nanoparticles is a metal or substance of these nanoparticles is a superconductor or the substance of these nanoparticles is ferroelectric. The breadth of functionality of the proposed heterolactic is determined by the fact that the manufacture is controlled by its dielectric function, which is a defining characteristic of the interaction between the substance and electromagnetic fields. Coherent interaction of particles through the near field, which occur if the average distance between particles is less than or of the order of a root of the cubic and what their polarizability (which means high volume concentration in a carrier substance, usually 10-30%), leads to a significant increase in the dielectric function of heterolactic compared to the dielectric functions of the materials of the particles and the medium. Indeed, consider heterolactic, in which the particles are placed in the carrier in a geometry close to the cubic lattice. Based on a formula Clausius-Mosotti for the specified form of the arrangement of particles in heterolactic and formulas of Loretz-Lorentz for amendments local-field particle - ellipsoid of rotation, we obtain the relation for finding the dielectric function of heterolactic εη: εη-1/εη+2=[(εc-1)/(εc/2)]+η([(εp-1)/1+n(εp-1)]-[(εc-1)/1+n(εc-1)])/3 where εc- the value of the dielectric function of the material of the media εp- the value of the dielectric function of the material particles, 0<n<1 is a factor of depoliarizuet particles, depending on the ratio of the lengths of the semiaxes, η - volumetric concentration of particles of the active agent in the carrier. The polarizability of the particles, - αpfor example, a rotational ellipsoid volume V is expressed by the formula: αp=(1/4π)V[(εp/εc-1)/1+(εp/εc-1)n]. Calculations show that in various cases, the value of the dielectric function of heterolactic in de is ATCI and hundreds of times can exceed the value of the dielectric function of the material of the carrier and the dielectric function of the material particles. For example, for the substance of the medium - ferroelectric, Vato3and matter particles - ferroelectric (PbLaBaS)(ZrTi)O3the value of the dielectric function of such heterolactic exceeds the value of the dielectric function (PbLaBaS)(ZrTi)O3(substances with one of the highest values ε) 100-200 times. The maximum of the dielectric function of heterolactic is achieved for a certain frequency fields, depending on the material, shape, concentration and location of particles in the media. Part of the proposed heterolactic includes solid particles of the active agent and a solid carrier, and the carrier is a semiconductor material or semiconductor layers of n-type and p-type n-p junction between them, or semiconductor polymer of n-type containing semiconductor nanocrystals p-type, or magnetoelastic, or environment with the possibility inverse settling energy States, for example by adding impurity atoms, or a dielectric substance may be liquid), and the substance of these particles is a metal or a superconductor, or a dielectric or ferroelectric. The breadth of functionality of the proposed heterolactic also determined that while manufacturing is controlled by the polarizability of the particles of its active principle, the station is camping in the media so so she had at least one maximum on the dependence of its value on the frequency of the electromagnetic field (plasma resonance). Plasma resonance associated with coherentism the interaction of the electrons in a metal or other (superconducting, ferroelectric) particle via the local electromagnetic field. The specified frequency plasma resonance of the particles depends on the size, shape and material of the particles and is calculated by the well-known formulas. When a small volume concentration of particles in the medium (1-5%) of their interaction with each other through the local field is small and does not make a defining contribution to the dielectric function of such heterolactic. This value is mainly determined by the increase in the polarizability of the particles (see formula above) when interacting with the electromagnetic field at the frequency close to the frequency of the plasma resonance of the particles, and increases in this case hundreds of times compared to ε for the material of the carrier, if the characteristic size of these particles are smaller than the wavelength of the specified electromagnetic fields. To find the specified maximum tested (depending on the frequency of the electromagnetic field in the presence of the maximum of the above (or similar for particles other form) expression for finding value αp. In particular, pointed to by the th expression α phas a maximum at the frequency for which 1+Re[(εp/εc)-1]n=0. Due to the fact that the factor depoliarizuet 0<n<1, the maximum possible for metal particles in a dielectric matrix, i.e. when Reεp<0, Reεc>0, and when the material particles is a superconductor or a ferroelectric, and the specified media is a solid substance; or the specified media is dielectric; or the specified storage medium is a semiconductor material; or the specified media is a semiconductor layers of n-type and p-type n-p junction between them; or the specified media is a semiconductor polymer of n-type containing semiconductor nanocrystals p-type; or the specified media is an opportunity inverse settling energy States, for example by adding impurity atoms; or the specified carrier is a liquid dielectric. The proposed heterolactic in force control in its production values of the dielectric function and its frequency dependence can be used in the production of elements of optical devices including lasers, mirrors, filters, lenses, fibers, etc., opto-electronic converters and energy storage and many grovehurst. In this case, since the limits of attainable values ε for heterolactic in the tens and hundreds of times wider than for a known applied materials, and devices, based on its application, have significantly higher functionality. Technology implementation of the proposed heterolactic: Technology implementation of the proposed heterolactic consists in mixing particles of the active agent with the molten medium in a predetermined proportion to obtain the desired volumetric concentration. A nanoparticle form is produced by coating substance particles on nuclear filter with the appropriate size of the channels and the subsequent dissolution of the substance of the filter (usually organic). Particles of different shape (similar to an ellipsoid of rotation) are produced by extrusion from the melt substance particles on the rod passive chemical composition by a slow decrease in the temperature of the melt. To obtain the desired shape of the particles of the rod rotates. The size and shape of the particles are controlled by the atomic force microscope. If necessary, ordered and oriented arrangement of the particles they are sequentially applied to the layer of the carrier in an electric field and closed the next layer of the device. There are other possible ways of producing the specified heterolactic, as described below./p> An example implementation of heterolactic according to claim 1: a quartz substrate is applied Poletaeva the film thickness of 100 nm. On the surface the film is applied colloidal silver solution. By known techniques, the Sol-gel method on the specified film is deposition of silver in the form of particles having a shape close to spherical, with a characteristic size of about 70 nm. By heating the film under the action of its own weight of silver particles “fall” in the film depth on the order of their size. The amount of silver in a colloidal solution is selected so as to provide a 10 percent volumetric concentration of particles in the film. The average distance between particles of silver is equal to about 100 nm. The polarizability of a spherical particle of silver in polythiophene approximately 1.8·106nm3and , therefore, the root of the third degree of this value is equal to 122 nm. The thus obtained substance, heterolactic, claim 1 satisfies the claims. An example implementation of heterolactic at 15: Pair of silver formed above the melt of the metal in the crucible is cooled in such a way that above the crucible and a region of saturated vapor, where the condensation of silver droplets, the surface tension which gives them a spherical shape. These droplets are removed from zone condense the AI directed stream of argon and deposited on a rotating disk, printed polystyrene substrate. The disc rotational speed is selected so that the film deposited only hardened silver particles with a diameter of about 70 nm, which “fall” into the substrate. Plasma resonance of spherical silver particles according to the calculations is near 1.9·1015Hz. Bulk density of silver particles in the substrate is regulated by the flow rate of argon and the time of their deposition and is about 2%. The resulting heterolactic actively affect electromagnetic radiation with a wavelength of about 560 nm. Literature: 1. USSR author's certificate 1527199. 2. Simeonova O.A., Samoilov, VA, Protsenko I.E. the Application for invention No. 2002100006 from 03.01.2002. 1. Heterogeneous substance for influencing electromagnetic fields, consisting of media and put into the specified media active principle, characterized in that the active principle is a cluster of atoms, nanoparticles or microparticles of the substance (s)other than the substance specified media, located in the specified media so that the characteristic (average) distance between these clusters, nanoparticles or microparticles is less than or of the order of the cubic root of the polarizability of these clusters, nanoparticles or microparticles in the substance of the specified media. 2. Heterogeneous with bstance to influence the electromagnetic field according to claim 1, characterized in that the carrier is a solid and these clusters, nanoparticles or microparticles are solid. 3. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the carrier is a semiconductor material, and these clusters, nanoparticles or microparticles are metal. 4. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the medium is a dielectric substance, and these clusters, nanoparticles or microparticles are metal. 5. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the carrier is a semiconductor layers of n-type and p-type n-p junction between them, and these clusters, nanoparticles or microparticles are metal. 6. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the carrier is a semiconductor substance and the substance of these nanoparticles is a semiconductor. 7. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that decree the config media is a semiconductor polymer of n-type, containing semiconductor nanocrystals p-type, and these clusters, nanoparticles or microparticles are metal. 8. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the carrier is a semiconductor polymer of n-type containing semiconductor nanocrystals p-type and substance of these clusters, nanoparticles or microparticles are semiconductor. 9. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the substance of these nanoparticles is a superconductor. 10. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the medium is dielectric and the substance of these nanoparticles is an insulator, but a different chemical composition. 11. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the medium is a dielectric and the substance of these microparticles is ferroelectric. 12. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the medium is a ferroelectric and the substance of these microparticles is also ferroelectric, but drugog the chemical composition. 13. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the carrier is an opportunity inverse settling energy States, for example by adding impurity atoms. 14. Heterogeneous substance for influencing the electromagnetic field according to claim 1, characterized in that the carrier is a liquid and the substance of these clusters, nanoparticles or microparticles is solid. 15. Heterogeneous substance for influencing the electromagnetic field according to claim 1 or 2, characterized in that the substance of these microparticles is ferroelectric. 16. Heterogeneous substance for influencing electromagnetic fields, consisting of media and put into the specified media active principle, characterized in that the active principle is a cluster of atoms, nanoparticles or microparticles made of a metallic or semiconductor material other than the substance specified media, and having at least one maximum in the frequency dependence of the polarizability of these clusters, nanoparticles or microparticles in the substance of the specified media and their sizes less than the wavelength of electromagnetic radiation. 17. Heterogeneous substance for influencing the electromagnet is haunted fields P16, characterized in that the carrier is a solid and these clusters, nanoparticles or microparticles are solid. 18. Heterogeneous substance for influencing electromagnetic fields on the item 16 or 17, characterized in that the carrier is a semiconductor material. 19. Heterogeneous substance for influencing electromagnetic fields on the item 16 or 17, characterized in that the carrier is a semiconductor layers of n-type and p-type n-p junction between them. 20. Heterogeneous substance for influencing electromagnetic fields on the item 16 or 17, characterized in that the carrier is a semiconductor polymer of n-type containing semiconductor nanocrystals p-type. 21. Heterogeneous substance for influencing electromagnetic fields on the item 16 or 17, characterized in that the substance of these nanoparticles is a superconductor. 22. Heterogeneous substance for influencing electromagnetic fields on the item 16 or 17, characterized in that the medium is a dielectric substance. 23. Heterogeneous substance for influencing electromagnetic fields on the item 16 or 17, characterized in that the carrier is an opportunity inverse of settling the energy which their States, for example, by adding impurity atoms. 24. Heterogeneous substance for influencing electromagnetic fields on item 16, characterized in that the carrier is a liquid, and these clusters, nanoparticles or microparticles are solid. 25. Heterogeneous substance for influencing electromagnetic fields on item 16, characterized in that the substance of these microparticles is ferroelectric.
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