No-potential power module of enhanced insulating voltage
 Method for assembly of high-power integrated circuit / 2267187The circuit leads are soldered by the group method and their main part is positioned on the same side on which the crystal is positioned, the preset remoteness of the free ends of the leads from the board is provided, in the process of soldering the variation of the distance between the components being soldered is controlled, on one installation designed for soldering out of inner conductors with a definite cross-sectional area, and/or on one installation designed for soldering of boards, and/or on one installation for soldering of crystals during one production cycle effected is respectively the soldering out of the inner conductors and/or soldering of boards, and/or soldering of crystals of various circuits, the possibility of simultaneous delivery of semifinished items different in type and/or class of the circuits is provided. |
 Method for producing multilevel thin-film integrated circuits / 2264676Proposed method includes formation of conductor patters in conductor layers and windows in insulator layers by way of photolithography and production of multilayer integrated circuit from conductor and insulator layers incorporating provision for inter-level commutation in the form of electrical connections obtained in insulator layer windows; integrated circuit is formed by sequential alignment of separate single-level thin-film boards and arrangement of permanent links in windows of insulator layers of these boards combining functions of inter-level commutation and physical fixation (mechanical connection) by means of, for instance, sections of conductor layers placed in relative contact condition provided according to desired layout above windows during formation of conductor patters; if physical strength of integrated circuit is found insufficient, its formation is accompanied by production of permanent links in additional windows of insulator layers to function as physical fixation only, for instance by microwelding conductor layer sections brought in mutual contact, these sections being made according to desired layout during formation of conductor pattern above additional windows without including them in mentioned pattern; in the process integrated circuit is formed through both types of windows whose axes are aligned during alignment of boards; for increasing number of boards being interconnected they are formed through windows whose axes in combined boards are spaced apart to reduce sag in conductor layer sections being connected including formation of permanent links in contacting conductor layer sections made in through windows of intermediate boards according to desired layout. This method is suited for use in production of multilevel integrated circuits with wide range of layer thicknesses and is compatible with commonly used integrated-circuit manufacturing technology. |
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Method for producing multilevel thin-film integrated circuits / 2264676 Proposed method includes formation of conductor patters in conductor layers and windows in insulator layers by way of photolithography and production of multilayer integrated circuit from conductor and insulator layers incorporating provision for inter-level commutation in the form of electrical connections obtained in insulator layer windows; integrated circuit is formed by sequential alignment of separate single-level thin-film boards and arrangement of permanent links in windows of insulator layers of these boards combining functions of inter-level commutation and physical fixation (mechanical connection) by means of, for instance, sections of conductor layers placed in relative contact condition provided according to desired layout above windows during formation of conductor patters; if physical strength of integrated circuit is found insufficient, its formation is accompanied by production of permanent links in additional windows of insulator layers to function as physical fixation only, for instance by microwelding conductor layer sections brought in mutual contact, these sections being made according to desired layout during formation of conductor pattern above additional windows without including them in mentioned pattern; in the process integrated circuit is formed through both types of windows whose axes are aligned during alignment of boards; for increasing number of boards being interconnected they are formed through windows whose axes in combined boards are spaced apart to reduce sag in conductor layer sections being connected including formation of permanent links in contacting conductor layer sections made in through windows of intermediate boards according to desired layout. This method is suited for use in production of multilevel integrated circuits with wide range of layer thicknesses and is compatible with commonly used integrated-circuit manufacturing technology. |
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Method for assembly of high-power integrated circuit / 2267187 The circuit leads are soldered by the group method and their main part is positioned on the same side on which the crystal is positioned, the preset remoteness of the free ends of the leads from the board is provided, in the process of soldering the variation of the distance between the components being soldered is controlled, on one installation designed for soldering out of inner conductors with a definite cross-sectional area, and/or on one installation designed for soldering of boards, and/or on one installation for soldering of crystals during one production cycle effected is respectively the soldering out of the inner conductors and/or soldering of boards, and/or soldering of crystals of various circuits, the possibility of simultaneous delivery of semifinished items different in type and/or class of the circuits is provided. |
 No-potential power module of enhanced insulating voltage / 2274928Proposed power module that can be built around diodes, thyristors, transistors, and other semiconductor devices has base, leads, case, and cermet board that mounts semiconductor component; arranged in tandem between semiconductor component and base are capacitive voltage divider assembled of minimum two cermet boards interconnected to organize electric circuit set up of minimum two series-connected capacitors and temperature compensator connected through one contacting surface to bottom cermet board and through other one, to module base; dimensions of temperature compensator effective surface follow those of cermet board metal plating contacting this temperature compensator; thickness of the latter should equal at least insulating gap length between edge of bottom board and that of its metal-plated surface. |
 Light-emitting device / 2281583Proposed light-emitting device that can be used in computer engineering, power engineering, railway and automobile transport, as well as in other industries for developing and manufacturing shared screens, information boards, miscellaneous lighting devices, and the like has panel made in the form of matrix formed by lines and columns with contact pads disposed at intersection points of odd-numbered lines and columns to receive light-emitting devices. Contact pads of adjacent lines are interconnected by means of jumpers disposed in even-numbered lines and columns. Adjacent jumpers in even-numbered lines and columns are spaced apart by means of through slots. |
 Light source / 2285312Proposed light source is made in the form of monolithic hybrid integrated circuit placed in package of standard lamp base and optically transparent light guide accommodating chips of emitting p-n junctions disposed on heat-transfer base; each chip is joined with cylindrical projection of light guide having conical depression on butt-end. |
 Structural member / 2290718Proposed structural member, for instance semiconductor component, has first integrated circuit disposed on second integrated circuit, both bearing first and second metal coatings facing one another, respectively, on one of their main surfaces. First metal coated areas are designed to electrically interconnect first and second integrated circuits. Newly introduced second metal coated areas are designed as additional electric functioning surfaces made beyond substrates of first and second integrated circuits. |
 Microwave hybrid integrated circuit / 2290719Proposed microwave hybrid integrated circuit has hole in heat-transfer metal base directly under insulating substrate hole, its sectional area being commensurable with the latter hole, which accommodates part of heat-transfer metal insert; the latter is connected to side surfaces of insulating substrate holes and to heat-transfer metal base; clearance between them is smaller than or equal to 0.4 mm and height of heat-transfer metal insert is smaller than or equal to total thickness of heat-transfer metal base and insulating substrate by height of semiconductor device chip. |
 Light-emitting device incorporating light-emitting components (alternatives) / 2295174Proposed light-emitting device has insulating substrate that carries plurality of GaN based light-emitting diode components. Plurality of light-emitting diode components are disposed on insulating substrate in the form of two-dimensional structure. Light-emitting diode components are assembled in first and second groups of equal number of components; first and second groups are inserted between two electrodes in parallel opposition for AC power supply. Electrode on one light-emitting diode component of first group is electrically connected and is common to electrode of one of light-emitting diode components of second group adjacent to one of mentioned light-emitting diode components of first group. Each group can be likewise assembled in the form of zigzag structure. |
 High-power hybrid microwave integrated circuit / 2298255Proposed device has transistors in the form of chips with flat heavy-current leads. Current-carrying metal base has projection aligned with insulating substrate hole and disposed in this hole, its height being such that its upper surface is flush with face side of insulating substrate. Depression provided on upper surface of projection is of through type on end of flat heavy-current leads of chip of one of transistors connected to metal coat of topological pattern. At least one contact pad provided with and connected to plate readily conducting heat and electricity is made on upper surface of heat-conducting metal base at least on one end of chip of one of transistors, its size being equal to or greater than 0.3 x 0.3 mm. This metal plate has at least one groove holding chip of other transistor; it is through groove on side of heavy-current leads connected to metal coat of topological pattern; it is of same size as the latter and its bottom thickness is 0.1-0.5 mm. Other flat heavy-current leads of transistor chips are connected to projection on heat-conducting metal base. |
 Module package and power semiconductor module / 2298857Proposed power semiconductor module package is assembled of two electrically insulated components attached to one another. First of mentioned package components has at least two holes to pass power leads and depression in the form of slit. At least two isolating walls between holes are provided on package surface perpendicular to the latter. One isolating wall is part of second package component out of mentioned ones; it is inserted into depression in first mentioned package component; at least one second wall out of mentioned isolating walls is part of first package component. Isolating walls placed between holes passing two power leads provide for compact arrangement of leads. |
FIELD: power modules for high-voltage converter engineering in various industries, transport, power engineering, and public utilities.
SUBSTANCE: proposed power module that can be built around diodes, thyristors, transistors, and other semiconductor devices has base, leads, case, and cermet board that mounts semiconductor component; arranged in tandem between semiconductor component and base are capacitive voltage divider assembled of minimum two cermet boards interconnected to organize electric circuit set up of minimum two series-connected capacitors and temperature compensator connected through one contacting surface to bottom cermet board and through other one, to module base; dimensions of temperature compensator effective surface follow those of cermet board metal plating contacting this temperature compensator; thickness of the latter should equal at least insulating gap length between edge of bottom board and that of its metal-plated surface.
EFFECT: minimum twice as high insulating voltage between leads and base due to use of internal capacitive voltage divider built around cermet boards.
1 cl, 4 dwg
The invention relates to the production of power modules based on diodes, thyristors, transistors and other semiconductor devices and can be used in high-voltage Converter equipment for various branches of industry, transport, energy, and public utilities.
The semiconductor element in the zero-voltage power module is placed on a metal-ceramic plate (MCP), which is connected with the base module. Electrical and thermal contacts between these elements of the module are implemented in practice by means of soldering or mechanical compression Assembly with a certain force. The heat generated when current flows in semiconductor elements, is passed into the cooling system through the ceramic-metal charge and the base is made of copper, metallating composites type AlSiC or other materials having high heat conductivity and mechanical strength. The isolation voltage between the base and the module outputs (Visol) is defined as the design and material of the shell, and the dimensions and properties of metal-ceramic circuit Board, which is based on aluminium oxide (Al2O3) or aluminum nitride (AlN)having good thermal conductivity and high dielectric characteristics. Dielectric strength inside a module is determined by t is linoy ceramic metal-ceramic circuit Board, the length of the insulating gaps "land of ceramics - the edge of the Board metallization and dielectric properties used for sealing module potting compound.
Well-known and are produced in Russia power relay modules presser [THE 16-92 IEAL THAT. The power semiconductor module type MTT, MTT] soldered [THE 16-2000 IEAL THAT. The power series MTKI, MTCI, MDTKI] structures, in which the insulating elements applied single layer ceramic Board on the basis of Al2O3and AlN. Isolation voltage of these modules depending on the thickness of the ceramics range from 2500 to 6000 V (effective value) [THE 16-92 IEAL THAT. The power semiconductor module type MTT, MTT], [TU 16-2000 IEAL THAT. The power series MTKI, MTCI, MDTKI].
Known also power modules foreign firms [Mitsubishi Electric Power Devices. Data CD, 2003], [Hitachi High-Power IGBT Modules. Short form catalog, 2001], [Eupec Power Semiconductors Data CD, 2003], which is similar to the constructs have the same voltage isolation. Some of them, using a thick ceramic from aluminum nitride, and large insulation distances reached higher values of voltage isolation: 9500 In the high-voltage modules Hitachi [Hitachi High-Power IGBT Modules. Short form catalog, 2001] and 10200 In the high-voltage modules of the company Eupec [Eupec Power Semiconductors Data CD, 2003].
The closest tech is a mere decision, selected as a prototype, is a power module type SKM200GB172DL 1 production Semikron, whose isolation voltage equal to 9000, achieved using MCP from aluminum nitride with a thickness of 1 mm with insulating gaps of length 2 mm
However, in some applications, for example, in potencialidades converters catering locomotives DC for the Russian Railways, particularly relevant is the use of modules isolation voltage over 13,000 Century With this purpose in order to further increase the voltage isolation is necessary to increase the thickness and insulating gaps MCP. The length of the insulating gap can be increased to a certain extent, limited by the size of the semiconductor element that is mounted on the MCP. The increase of the thickness of the ceramic causes a number of problems. First, it dramatically increases the cost of the MCP with the thickness of the ceramics more than 1 mm. secondly, the increase in the thickness of the ceramics leads to lower electric strength of insulation due to a higher probability of occurrence in the material of the cavities, which are caused by partial discharge at high electric fields [DBC Substrates with Reduced Ceramic Thickness in Power Semiconductor Modules, Dr. - Ing.J.Schulz-Harger, P.H.Maier, PCIM, 1/1996]. Because of this the thicker ceramics cannot get the proportional increase in voltage isolation.
The objective of the invention to increase the electric strength of insulation zero-voltage power module while minimizing thermal resistance and mass-dimensional characteristics of the device.
The technical result of the invention is not less than a twofold increase in the voltage isolation between terminals and the base of the power module through the use of internal capacitive voltage divider on the basis of the metal-ceramic circuit boards.
This object is achieved in that in the zero-voltage power module consisting of a copper base, conclusions, housing, ceramic Board mounted on it a semiconductor element, between this Board and the base are placed consecutively a certain amount of metal-ceramic circuit Board (1, 2, 3...n) and thermal compensator (TC), which is one of its contact surface is connected with the lower metal plate and the other surface with the base module, the dimensions of the working surface of thermal compensator repeat sizes metallization contact with him cermet Board, and the thickness of thermal compensator must be at least the length of the insulating gap from the edge the bottom Board to the edges of the metallization.
The proposed solution is based on the principle of dividing the voltage by sequentially combined the capacitors. If there are n series-connected capacitors with capacitances C1With2...Withnand to the circuit applied voltage V, then for a given schema, the following relations are true:
In the simplest case when n=2 and C1=C2will have the equality of the voltages on capacitors:
Therefore, if you connect two identical metal-ceramic circuit Board, you get an electric circuit consisting of two series-connected capacitors of the same capacity, while the applied voltage is divided in half. To accomplish this, it is sufficient to use at least two metal-ceramic circuit Board standard thickness (up to 1 mm), which allows to obtain a two-fold increase in Visolat the optimum combination of thermal and cost characteristics of the module. Ceramic Board can be connected to each other in any way, providing good thermal contact (soldering, clamps, and other). To ensure uniform dividing the voltage at the metal-ceramic circuit boards between the bottom plate and the substrate is molybdenum plate with thickness not less than the length of the insulating gap from the edge of the ceramic to the edge of the metallization ITUC and the contact area on which ernesti, equal to the area of the lower metallization of the Board.
Figure 1 presents the design of the power module of the prototype figure 2 - base module with soldered metal-ceramic plate and the semiconductor elements, figure 3 - the design of the power module with high voltage isolation, figure 4 - base module with soldered metal-ceramic boards, semiconductor elements and thermal compensator. Semiconductor elements (1) connected with metal-ceramic plate (2)which is fixed on the base (4). The module is assembled in a plastic housing (5) and gel filled silicone compound (7). The isolation voltage of the prototype between pins (6) and base (4) is determined by the internal insulating gap between the edge of the upper metallization of the Board and the nearest point on the surface of the base equal to the sum of the distances "a" and "d" (figure 2). Figure 3 presents the design of the power module with high voltage isolation. Unlike the prototype is that the module is used in a capacitive voltage divider, made in the form of several series-connected metal-ceramic circuit boards. Evenly dividing the voltage on all metal-ceramic circuit boards capacity of each Board must be the same, so used MCP with the same thickness of ceramics (d1=d2and what horse metallization.
To align the voltage breakdown along the edge of each metal-ceramic circuit Board, a module which makes use of two MCP, the lower the fee should be raised above the surface of the base to a height "b", which shall be not less than the length of the insulation gap "a" between the edge of the ceramics and the edge of the metallization MCP (figure 4). To this end between the bottom of the ITUC and the substrate is placed in a molybdenum plate (3) with a thickness equal to or greater than the length of the insulation gap "a", and the dimensions of the working surface, repeating the dimensions of the metallization of the bottom of the MCP.
This design of the power module allowed not less than two-fold increase isolation voltage, to provide a low value of partial discharge and high stability during dielectric tests, to reduce mechanical stresses in the metal-ceramic circuit boards, more than two times to reduce the capacitance between the base and the power outputs and, consequently, to reduce the bias currents caused by voltage spikes in the supply networks.
Power relay module with high voltage isolation, consisting of a base, pins, housings, metal-ceramic circuit Board mounted on it a semiconductor element, characterized in that between the semiconductor element and the substrate are placed consecutively container of the local voltage divider, consisting of at least two metal-ceramic circuit Board connected with the formation of an electric circuit consisting of at least two series-connected capacitors, and thermal compensator, which is one of its contact surface is connected with the lower metal plate and the other surface with the base module, the dimensions of the working surface of thermal compensator repeat sizes metallization contact with him cermet Board, and the thickness of thermal compensator must be at least the length of the insulating gap from the edge of the lower Board to the edges of the metallization.