Method for manufacturing vacuum integrated circuit with components of electronic valve type and vacuum integrated circuit

FIELD: vacuum and solid state electronics.

SUBSTANCE: proposed method involves use of semiconductor substrate having plurality of micropoints disposed according to vacuum integrated circuit layout. Conductor and insulator plasma streams are alternately conveyed to substrate. Conductor plasma stream is produced by exciting series of pulsed vacuum arcs of length τ and space T between plasma generator cathode and anode. Insulator plasma stream is produced by injecting reactive gas. Atoms and ions whose energy in transport is over eU2 are removed from conductor and insulator plasma streams. Potential barrier of eU2 < eU1 is formed above end of each of plurality of micropoints for insulator plasma ions and for conductor plasma ions whose energy is lower than eU2 in the form of plurality of closed equipotential surfaces of potential U2. Insulator plasma and conductor plasma are condensed on external end of equipotential surfaces and plurality of closed spaces whose shape is dictated by shape of closed equipotential surfaces are used as bulbs of electronic valves.

EFFECT: facilitated manufacture of vacuum integrated circuits due to dispensing with etching and lithographic operations; improved quality of products.

21 cl, 13 dwg

The present invention relates to vacuum and solid-state electronics, and more specifically to a method of manufacturing a vacuum integrated circuits with elements of type electron tubes and vacuum integrated circuit.

The present invention can be used in electronics for amplification, modulation, detection, rectification and generation of electrical oscillations, as well as in computing for information processing.

The closest technical solution is a method of manufacturing a vacuum integrated circuits with elements of type e lamp (see, for example, Pirjo and others, journal of Nanotechnology”, No. 13, p. 1-4, 2002, “Fabrication and electrical characteristics of microcathode the field emission of carbon nanotubes with integrated control electrode”), which consists in the fact that they use a substrate of semiconductor material, which formed lots of microstrip height h and radius r, placed according to the topology of the vacuum integrated circuits, put the specified substrate with many microstrip in a vacuum chamber, which vacuum to a residual pressure 10^-2-10^-9mm RT. senior, served on a substrate bias potential U1, formed successively in a vacuum chamber, the plasma flow of the dielectric, consisting of atoms of the ions, and then the plasma flow conductive material composed of atoms and ions, consistently set on the substrate above the plasma flows for the formation of elements of the set of electron tubes in accordance with many microstrip, condense on the substrate plasma dielectric for forming for each of the multiple electronic lamps dielectric layer, which is the interelectrode gap, condense formed on the dielectric layer, the plasma is conductive material for forming for each of the multiple electronic lamps layer of conductive material, which is the anode, the cathode of each of which is corresponding to microstrip many microstrip substrate.

This method has several disadvantages, which are caused by the necessity of performing optical lithography and reactive ion etching for forming the conductive layer and the dielectric layer of open cavities.

For this first removed from the surface of the conductive material contamination and residual water by treating the surface pairs hexamethyldisiloxane -(CH₃)₃-Si-NH-Si(CH₃)₃. To clean the surface of the conductive material is applied a layer of photoresist with a thickness of 0.3-2.0 μm by centrifugation and dried by infrared drying. Transfer the image from a photomask to the Loy photoresist by exposing the projection photolithography multiple Windows, each of which corresponds to future electronic lamp. Use the photomask with lots of Windows, arranged according to the topology of the vacuum integrated circuits.

Show the photoresist, whereby the layer of photoresist to form photoresistive mask. Then, the conductive layer and the dielectric layer form an open cavity by ion-beam etching or reactive ion-beam etching through the Windows photoresistive mask. To do this, place the substrate with a photoresistive mask in a vacuum chamber and vacuum to a residual pressure of 10^-6mm Hg Served in the vacuum chamber a mixture of reactive gases to reach the pressure of 10^-2mm Hg and excite the gas discharge. Then remove the photoresistive mask in an oxygen plasma.

Because the specified method uses the processes of lithography and etching, it is not possible to make a vacuum integrated circuits with elements of type e lamps with size in the nanometer range. In addition, the cavity of the electron tube made by the method of etching is open. It is known that for a stable and long-term operation of the electron tube cavity lamp should be vacuumed. Due to the fact that the cathode of the received electronic lamp is in the atmosphere uncontrolled chemical is a mini-composition, get unstable emission characteristics.

Known vacuum chip with elements of type e lamp (see, for example, Pirjo and others, journal of Nanotechnology”, No. 13, p. 1-4, 2002, “Fabrication and electrical characteristics of microcathode the field emission of carbon nanotubes with integrated control electrode)containing substrate 1 (Fig 1) of a semiconductor material, on which is placed a base metal electrode 2, many microstrip 3 of electrically conductive material on the base metal electrode 2 according to the topology of the vacuum integrated circuits, each of microstrip or group of microstrip serves as the cathode 4 of the corresponding electronic lamp 5, layer 6 of dielectric placed on the base metal electrode 2 and the clerk interelectrode gap for each of the multiple electronic tubes 5, a layer 7 of a conductive material on the dielectric layer 6 and which mesh 8 for each of the multiple electronic lamps 5.

The specified vacuum chip contains an array of lamps 5 (figure 2, an image obtained with an electron microscope), each of which has an open cavity 9, which has functional elements of the lamp 5.

Figure 3 shows a General view of the known vacuum integral is iroshima with elements of type e lamp section (an image obtained with an electron microscope), where visible open cavity 9 of the lamp 5.

Because the bulb of the electron tube 5 is open, the cathode 4 of the electron tube is at atmospheric conditions, i.e. the chemical composition of the gases in the lamp is constantly changing, which causes a change in the work function due to the adsorption of gases. Consequently have unstable emission characteristics and technical parameters of the lamp.

The present invention is the task of creating a method of manufacturing the element vacuum integrated circuit type electron tubes, which would simplify the manufacturing technology by eliminating operations etching and lithography, and to improve the quality of the vacuum integrated circuits type of electronic lamps.

The present invention also given the task of creating element vacuum integrated circuit type e-lamp high quality, which are manufactured with simplified technology by eliminating operations etching and lithography.

The problem is solved by creating a method of manufacturing a vacuum integrated circuits with elements of type e lamp, namely, that

use a substrate of semiconductor material, which formed lots of microstrip height h and radius r, placed the s according to the topology of the vacuum integrated circuits, the space between which is filled with dielectric material,

put the specified substrate with many microstrip in a vacuum chamber, which vacuum to a residual pressure of 10^-2-10^-9mm RT. century,

served on a substrate bias potential U1,

form consistently in the vacuum chamber of the plasma flow of the dielectric is composed of atoms and ions, and then the plasma flow conductive material composed of atoms and ions,

consistently set on the substrate above the plasma flows for the formation of elements of the set of electron tubes in accordance with many microstrip,

condense on the substrate plasma dielectric for forming for each of the multiple electronic lamps dielectric layer, which is the interelectrode gap,

condensate formed on the dielectric layer, the plasma is conductive material for forming for each of the multiple electronic lamps layer of conductive material, which is the anode, the cathode of each of which is corresponding to microstrip many microstrip background

according to the invention

use at least one plasma generator solids and at least one plasma duct is connected with the corresponding plasma generator solids with the vacuum chamber,

for creation is the plasma flow conductive material excite between the cathode and anode of at least one plasma generator sequence pulsed vacuum arcs duration τ and pause T, and as a cathode material of at least one plasma generator using a conductive material,

as for the formation of the plasma flow of the dielectric in the obtained plasma flow conductive material Inuktitut at least one reactive gas,

remove from plasma flows conductive material and dielectric atoms and ions with energy of more than U2 during transportation of the plasma flow at least one plasma duct through what is specified on the plasma duct impose longitudinal magnetic field H and the applied bias potential U2, in which is formed an electric field E2, crossed with the magnetic field H,

formed on the end face of each of the many microstrip potential barrier U2<U1 for ions of the plasma dielectric and plasma ions of a conductive material having energy less U2, in the form of an appropriate set of closed equipotential surfaces with the magnitude of the potential U2,

thus condense the plasma dielectric and the plasma conductive material on the outer side of each of the set of closed equipotential surfaces, whereby to form a set of closed cavities defined by the shape of the closed equipotential surface and employees flasks electronic lamps, and on the specified dielectric material on plots majdalani electronic tubes condense the plasma dielectric.

It is advisable that the obtained conductive layer formed of at least one additional dielectric layer and at least one additional layer of conductive material for forming an electron tube with a multigrid structure.

Useful to the ratio of the work output of the substances of which form the layers of conductive material and dielectric selected from the group consisting of

eϕ1<eϕ2, eϕ1=eϕ2, eϕ1>eϕ2 or combinations thereof,

where eϕ1 - output operation substances conductive material,

eϕ2 - output operation of the dielectric substance.

Advantageously, as the reactive gas used with oxygen, nitrogen or mixtures thereof.

It is useful to injection of the reactive gas in the plasma flow was carried out in the region of a vacuum arc or plasma duct, or in the region of the substrate.

It is advisable that the potential bias U1 ranged U2<U1<U3, where U3 - voltage thermal destruction of microstrip plasma dielectric or plasma conductive material.

Preferably, the value of U2 is changed in the range

Wiz/3ez<U2<3Wi₁/e

where z is the ratio of ionization, an integer equal 1, 2, 3, 4, 5, Wiz - energy ions with multiplicity z ionization, corresponding to the maximum of the distribution function of ion energy, e is the electron charge=1,6×10^{-19/sup> (Pendant), Wi₁- energy ions at Z=1.}

^{The advantage that the duration of τ excitation of vacuum arc was chosen from the condition τ<τ1 τ1 - time thermal destruction of microstrip plasma dielectric and plasma conductive material.}

^{It is advisable to pause T between the pulses in the sequence of pulsed vacuum arcs were chosen from the condition T<T1, where T1 is the time required for cooling the ends of microstrip to the substrate temperature.}

^{It is advisable that when forming the dielectric layer thickness of the specified layer was chosen from the condition in which the diameter d1 of the flask in the dielectric layer from the layer of conductive material is within 2d2<d1<2Le, where d2 is a constant of the crystal lattice of dielectric substance, Le is the length of the shielding of the electric field potential bias U1 conductive material.}

^{It is useful to have as a conductive material used metal, semimetal or a doped semiconductor.}

^{Beneficial to the magnitude of the potential bias U1 has changed in the specified range from layer to layer during the formation of layers of dielectric and from layer to layer during the formation of layers of conductive material.}

^{Preferably, the thickness d3 of each layer of conductive material located between the anode and cathode of electron tubes and their work output eϕ1 chose the condition d3> 2r and eϕ1>eϕ3, where r is the radius of microstoria, eϕ3 - work function substance microstoria.}

^{It is advisable that at least one conductive layer located between the anode and cathode electronic lamps, served as a special cathode when the d3<2r, eϕ1 <eϕ3, where d3 is the thickness of the layer of conductive material, r is the radius of microstoria, eϕ1 - work function layer of conductive material, eϕ3 - work function substance microstoria.}

^{The problem is solved by creating a vacuum integrated circuits with elements of type electron tube containing}

^{a substrate of semiconductor material,}

^{many microstrip of electrically conductive material height h and radius r is placed on the substrate according to the topology of the vacuum integrated circuits that serve as the cathodes for a variety of electronic tubes, the space between which is filled with dielectric material,}

^{a dielectric layer placed on the substrate and serving interelectrode gap for each of the multiple electronic lamps,}

^{the layer of conductive material on the dielectric layer and which is the anode for each of the multiple electronic lamps,}

^{in which, according to the invention}

^{the bulb of each of the multiple electronic lamps, is a closed Polo is to be above the end of at least one microstoria, the form of which is defined in its formation form a closed equipotential surface, the cavity formed in at least one dielectric layer and at least one layer of conductive material,}

^{the thickness of the dielectric layer is determined from the condition in which the diameter d1 of the flask in the dielectric layer from the layer of conductive material is within 2d2<d1<2Le, where d2 is a constant of the crystal lattice of dielectric substance, Le is the length of the shielding electric fields conductive material when applying a substrate bias potential of U1,}

^{and the height h1 bulb is less than h/2 microstoria.}

^{It is advisable to vacuum chip contains at least one additional dielectric layer placed on the conductive layer, and at least one additional layer of conductive material on at least one additional dielectric layer.}

^{It is useful to have a thickness of d₃each layer of conductive material located between the anode and cathode of vacuum tubes, was in the range of d₄<d₃<2Le, where d₄- the thickness of a monolayer of conductive material.}

^{Preferably, in the case where the chip contains one additional dielectric layer and one additional layer of conductive mA is Arial, the layer of conductive material on the dielectric layer, served as the control grid of each of the multiple electronic lamps, additional conductive layer serving as the anode of each of the multiple electronic lamps, an additional dielectric layer served as the interelectrode spacing between the control grid and anode, with many electronic lamps refers to the type of triodes.}

^{Advantageously, in the case where the chip contains two additional dielectric layer and two additional layers of conductive material, the additional layer of conductive material on the dielectric layer, served as the control grid of each of the multiple electronic lamps, an extra layer of conductive material placed farther from microstrip served as the anode for each of the multiple electronic lamps, an extra layer of conductive material placed closer to Microstream, served as an escape grid for each of the multiple electronic lamps, and additional layers of dielectric served interelectrode gaps of electronic lamps, which are of a type tetrodes.}

^{The invention is further explained in the description of the preferred variants of its embodiment with reference to the accompanying drawings, in which}

^{Figure 1 depicts a known vacuum integrated circuit with e the cops type electron tube (cross section);}

^{Fig.2 - known vacuum integrated chip with elements of type e lamp (image obtained with an electron microscope);}

^{Figure 3 - General view of the element vacuum integrated circuit type e lamp (image obtained with an electron microscope);}

^{4 is a diagram of the vacuum integrated circuits with elements of type e lamp related to the type of diodes according to the invention;}

^{Figure 5 - the shape of the equipotential surface that defines the shape of the bulb-type element of an electron tube according to the invention;}

^{6 is a diagram of a second variant implementation of the vacuum integrated circuits with elements of type electron tube containing a few microstrip, according to the invention;}

^{Fig.7 is a diagram of a third variant execution vacuum integrated circuits with elements of type e lamp related to the type of triodes, according to the invention;}

^{Fig diagram of a fourth variant execution vacuum integrated circuits with elements of type e lamp related to the type of tetrodon, according to the invention;}

^{Figure 9 - installation for the implementation of the first variant of the method of manufacturing a vacuum integrated circuits with elements of type e lamp according to the invention;}

^{Figure 10 - diagram of the functions f1, f2, f3 distribution of ions and uminia energy Wz (eV) for once ionized, doubly ionized and triple ionized atoms of aluminum A1 in pulsed vacuum arc according to the invention;}

^{11 is a diagram of distribution of the equipotential surfaces over Microstream when the supply voltage U1 on a substrate according to the invention;}

^{Fig - installation for the implementation of the second variant of the method of manufacturing a vacuum integrated circuits with elements of type e lamp according to the invention;}

^{Fig - installation for the implementation of the third variant of the method of manufacturing a vacuum integrated circuits with elements of type e lamp according to the invention;}

^{Fig two equipotential surface potentials U3 and U4 for two values of the bias potential of the substrate U1’ U1" at a constant value U2 according to the invention.}

^{Vacuum chip 10 (figure 4) with elements of type e lamp 11 includes a substrate 12 of a semiconductor material such as silicon.}

^{Many microstrip 13 of electrically conductive material height h and radius r in the form of graphite tubes in the diamond-like carbon film placed on the substrate 12 according to the topology of the vacuum integrated circuits, the end of each of which serves as a cathode 14 of the corresponding electronic lamp 11. The space between Microstream 13 filled dielectrics is their material 15.}

^{On the dielectric material 15 is placed a layer 16 of dielectric, which acts as the interelectrode gap 17 for each of the multiple electronic tubes 11. The layer 16 of dielectric is placed a layer 18 of conductive material, which is the anode 19 for each of the multiple electronic tubes 11, with electronic led are diodes.}

^{The bulb 20 of each of the multiple electronic tubes 11 is a closed cavity 21 on the end face of the corresponding microstoria 13. The shape of the cavity 21 is defined at its formation form a closed equipotential surface 22 (figure 5). In the described embodiment, the cavity 21 formed in the same layer 16 of dielectric and a layer 18 of conductive material. Figure 5 shows two additional equipotential surfaces 22’ and 22", the potentials are more and less, respectively, than equipotential surface 22, the potential of which is equal to the potential U2 displacement of the plasma duct.}

^{The thickness of the layer 16 of dielectric material from the conditions under which the diameter d1 of the bulb 20 in the layer 16 of dielectric layer side conductive material 18 is within 2d2<d1<2Le, where d2 is a constant of the crystal lattice of dielectric substance, Le is the length of the shielding of the electric field potential bias U1 conductive material. The height h1 bulb 20 is less than h/2 microstoria.}

^{In smogen option run when closed, the cavity 21 is formed over the faces of several microstrip 13 (6), made of several graphite nanotubes, which serve as cathodes 14 of the corresponding electronic lamp 11.}

^{In another embodiment, the vacuum chip 10 (7) contains one additional layer 23 of a dielectric placed on the layer 18 of conductive material, and at least one additional layer 24 of conductive material placed on the second layer 23 of the dielectric.}

^{The thickness of d₃the layer 18 of conductive material located between the cathode and anode of electron tubes is in the range of d₄<d₃<2L₃where d₄- the thickness of a monolayer of conductive material.}

^{In the described embodiment, when the chip 10 (7) contains one additional layer 23 and one additional dielectric layer 24 of conductive material, the layer 18 of conductive material deposited on the layer 16 of dielectric, serves as the control grid 25 of each of the multiple electronic tubes 11. The additional layer 24 of conductive material as the anode 26 of each of the multiple electronic tubes 11, an additional layer 23 of the dielectric serves as the interelectrode gap 27 between the control grid and anode, with many electronic tubes 11 refers to the type of triodes.}

^{When the chip 10 (Fig) which contains two extra layer 23, 28 of dielectric and two additional layers 24, 29 conductive material, the conductive layer 18 placed on the layer 16 of dielectric, serves as the control grid 30 of each of the multiple electronic tubes 11. An additional layer 29 of conductive material placed farther from microstrip 13, serves as the anode 31 for each of the multiple electronic tubes 11. The additional layer 24 of conductive material placed closer to Microstream 13, serves as a shielding grid 32 for each of the multiple electronic tubes 11. Additional layers 23 and 28 of the dielectric serve interelectrode gaps 33, 34 electronic tubes 11, while the electron tube are of a type tetrodes.}

^{A method of manufacturing a vacuum integrated circuit type e lamp is as follows.}

^{Use the substrate 12 (4) of the semiconductor material, which formed lots of microstrip 13 height h and radius r, in the form of graphite nanotubes in the diamond-like carbon film, placed according to the topology of the vacuum integrated circuits.}

^{Put the specified substrate 12 (Fig.9) in the vacuum chamber 35, which vacuum to a residual pressure of 10-2-10-9mm RT. Art. Served on the substrate 12, the bias potential of U1 from the source 36 DC voltage.}

Formed successively in a vacuum chamber 5, the flow of the plasma dielectric, composed of atoms and ions, and then the plasma flow conductive material composed of atoms and ions. Consistently set on the substrate 12, these streams of plasma for forming elements of many electronic tubes 11 in accordance with many microstrip 13.

Condense on the substrate 12 plasma dielectric for forming for each of the multiple electronic tubes 11 of the layer 16 of dielectric, which is the interelectrode gap.

Condensate formed on the dielectric layer, the plasma is conductive material for forming for each of the multiple electronic tubes 11 of the layer 18 of conductive material, which is the anode. The cathode 14 of each of the multiple electronic lamps is the end of the relevant microstoria 13 many microstrip substrate 12.

In the described embodiment uses one generator 37 plasma solids and one plasma duct 38 connected to the generator 37 plasma solids.

For the formation of the plasma flow conductive material excite between the cathode and anode generator 37 plasma sequence of pulsed vacuum arcs duration τ and pause So as cathode material generator 37 plasma using a conductive material.

For the formation of the plasma flow of the dielectric in the obtained plasma flow conductive material are injection what about the at least one reactive gas, for example, oxygen O₂nitrogen (N₂or mixtures thereof.

Remove from plasma flows conductive material is aluminum Al and dielectric Al₂O₃atoms and ions with energy of more than U2 (figure 10) during transportation of the plasma flow at least one plasma duct 38 by which the plasma duct 38 impose longitudinal magnetic field H and the applied bias potential U2, in which is formed a transverse electric field E is crossed with the magnetic field N.

Formed on the end face of each of the many microstrip 13 potential barrier U2<U1 for ions of the plasma dielectric and plasma ions of a conductive material having energy less U2, as distributed over the surface of the substrate corresponding set of closed equipotential surfaces 22 with the magnitude of the potential U2 (11).

A non-uniform electric field E over Microstream 13 is formed by applying bias potential of U1 on the substrate 12 in the form of three-dimensional distribution of the electric field E and the potential U, which depend on the coordinates above the end of microstoria and connected by the relation E=grad u. three-Dimensional distribution of U on each end of microstrip is a set of closed equipotential surfaces U2, U2’, the potential of which decreases as the distance from the end of microstoria, the potential of which RA is Yong U1.

Figure 11 presents a two-dimensional potential distribution U of the electric field E in the plane passing through the axis of microstoria. The trajectory of the ions is shown by arrows that pass through a potential barrier equipotential lines U2’, reflected from the equipotential lines U2 and condense on the outer side of this equipotential lines.

Condense the plasma dielectric and the plasma conductive material on the outer side of each of the set of closed equipotential surfaces 22, whereby to form a set of closed cavity 21 defined by the shape of the closed equipotential surface 22 and employees flasks 20 electronic tubes 11. And on the substrate 12 between the tubes 20 condense the plasma dielectric.

Possible second variant of the method, in which use at least one additional generator 39 (Fig) plasma and, accordingly, at least one additional plasma duct 40. In this case, the formation of additional layers of dielectric and an additional layer of conductive material with a different work function from two different conductive materials used as cathodes generators 37, 39 plasma solids.

There is one more variant of the method, in which use at least two of the additional generator 39 and 41 (Fig) PLA who we are and respectively at least two additional plasma duct 40, 42. In this case, the formation of additional layers of dielectric and additional layers of conductive material with a different work function from three different conductive materials used as cathodes generators 37, 39, 41 plasma solids.

The obtained conductive layer form at least one additional dielectric layer and at least one additional layer of conductive material for forming an electron tube with a multigrid structure type triode, tetrode and pentode, respectively, the number of additional layers.

The ratio of the work output of the substances of which form the layers 24, 29 conductive material and the layers 23, 28 dielectric selected from the group consisting of

eϕ1<eϕ2, eϕ1=eϕ2, eϕ1>eϕ2 or combinations thereof,

where eϕ1 - output operation substances conductive material,

eϕ2 - output operation of the dielectric substance.

Injection of the reactive gas in the plasma flow is carried out in a region of a vacuum arc generator 37 plasma solids or in the plasma duct 38, or in the region of the substrate 12.

Potential displacement U1 is in the range of U2<U1<U3, where U3 - voltage thermal destruction of microstrip 11 plasma dielectric or plasma conductive material. The value of U2 change in the range

Wiz/3ez <U2 <3 Wi₁/e

the de z - the multiplicity of ionization, an integer equal 1, 2, 3, 4, 5, Wiz - energy ions with multiplicity z ionization, corresponding to the maximum of the distribution function of ion energy, e is the electron charge=1,6×10^-19(Pendant), Wi₁- energy ions at Z=1.

Duration τ excitation of the vacuum arc is chosen from the condition τ<τ1 τ1 - time thermal destruction of microstrip plasma dielectric and plasma conductive material.

Pause T between the pulses in the sequence of pulsed vacuum arcs is chosen from the condition T<T1, where T1 is the time required for cooling the ends of microstrip to the substrate temperature.

When forming layer 16 (5) of the dielectric thickness of the specified layer 16 is chosen from the condition in which the diameter d1 of the bulb 20 in the dielectric layer from the layer of conductive material is within 2d2<d1<2Le, where d2 is a constant of the crystal lattice of dielectric substance, Le is the length of the shielding of the electric field potential bias U1 conductive material.

As a conductive material using a metal, semimetal or a doped semiconductor.

The magnitude of the potential bias U1 (Fig) change in the specified range U2<U1<U3 from layer to layer during the formation of layers of dielectric and from layer to layer during the formation of layers of conductive material. On Fig shows two e is bipotential surface potentials U4 and U5 for two values of the bias potential of the substrate U1’ U1" at a constant value U2. The shape and size of elements, each lamp can change in the area enclosed between the two equipotentially with potential U4, U5 if we change the value from U1 U1’ U1".

The thickness d3 of each layer of conductive material located between the anode and cathode electronic lamps, and his work output eϕ1 chosen from conditions d3>2r & eϕ1>eϕ3, where r is the radius of microstoria, eϕ3 - work function substance microstoria. In this case, there is a reduction of the grid currents electronic lamps, due to field emission.

At least one conductive layer located between the anode and cathode of electron tubes, serves as an additional cathode in the form of a cylindrical surface when the d3<2r, eϕ1<eϕ3, where d3 is the thickness of the additional layer of conductive material, r is the radius of microstoria, eϕ1 - work function substance layer of a conductive material, eϕ3 - work function substance microstoria. In this case, there is an increase in the anode current of the electron tube due to field emission from the secondary cathode.

1. A method of manufacturing a vacuum integrated circuits with elements of type electron tubes, which consists in the fact that they use a substrate of semiconductor material, which formed lots of microstrip height h and p is DICOM r, posted by according to the topology of the vacuum integrated circuits, the space between which is filled with a dielectric material, is placed on the specified substrate with many microstrip in a vacuum chamber, which vacuum to a residual pressure of 10^-2-10^-9mm Hg, served on a substrate bias potential U1, formed successively in a vacuum chamber, the plasma flow of the dielectric is composed of atoms and ions, and then the plasma flow conductive material composed of atoms and ions, consistently set on the substrate above the plasma flows for the formation of elements of the set of electron tubes in accordance with many microstrip, condense on the substrate plasma dielectric for forming for each of the multiple electronic lamps dielectric layer, which is the interelectrode gap, condense formed on the dielectric layer, the plasma is conductive material for forming for each of the multiple electronic lamps layer of conductive material, which is the anode, the cathode of each of which is corresponding to microstrip many microstrip substrate, wherein using at least one plasma generator solids and at least one plasma duct is connected with the corresponding plasma generator solids and vacuum the second camera, for the formation of the plasma flow conductive material excite between the cathode and anode of at least one plasma generator sequence pulsed vacuum arcs duration τ and pause T, and as a cathode material of at least one plasma generator using a conductive material, and for the formation of the plasma flow of the dielectric in the obtained plasma flow conductive material Inuktitut at least one reactive gas, are removed from the plasma flows conductive material and dielectric atoms and ions with energy of more than eU2 during transportation of the plasma flow at least one plasma duct through what is specified on the plasma duct impose longitudinal magnetic field H and apply the bias potential of U2, in which is formed an electric field E2, crossed with the magnetic field H, is formed over the end face of each of the many microstrip potential barrier eU2<eU1 ions of the plasma dielectric and plasma ions of a conductive material having energy less eU2, in the form of an appropriate set of closed equipotential surfaces with the magnitude of the potential U2, thus condense the plasma dielectric and the plasma conductive material on the outer side of each of the set of closed equipotential surfaces, whereby to form many Zam is mentioned cavities, determined by the form of the closed equipotential surface and employees flasks electronic lamps, and on the specified dielectric material between the tubes electron tubes condense the plasma dielectric.

2. The method according to claim 1, characterized in that on the layer of conductive material to form at least one additional dielectric layer and at least one additional layer of conductive material for forming an electron tube with a multigrid structure.

3. The method according to claim 2, characterized in that the ratio of the work output of the substances of which form the layers of conductive material and a dielectric selected from the group consisting of eϕ1 <eϕ2, eϕ1=eϕ2, eϕ1>eϕ2 or combinations thereof, where eϕ1 - output operation substances conductive material, eϕ2 - output operation the dielectric substance.

4. The method according to claim 1, characterized in that as a reactive gas using oxygen, nitrogen or mixtures thereof.

5. The method according to claim 1, characterized in that the injection of the reactive gas in the plasma flow is carried out in a region of a vacuum arc.

6. The method according to claim 1, characterized in that the injection of the reactive gas in the plasma flow is carried out in the plasma duct.

7. The method according to claim 1, characterized in that the injection of the reactive gas in the plasma flow is carried out in a region of the substrate.

8. The method according to claim 1, the tives such as those the potential displacement U1 is in the range of U2 <U1 <U3, where U3 - voltage thermal destruction of microstrip plasma dielectric or plasma conductive material.

9. The method according to claim 1, characterized in that the value of U2 change in the range Wiz/3ez <U2 <3Wi₁/e, where z is the ratio of ionization, an integer equal 1, 2, 3, 4, 5, Wiz - energy ions with multiplicity z ionization, corresponding to the maximum of the distribution function of ion energy, e is the electron charge=1,6×10^-19CL, Wi₁- energy ions at z=1.

10. The method according to claim 1, characterized in that the duration of τ excitation of the vacuum arc is chosen from the condition τ<τ1 τ1 - time thermal destruction of microstrip plasma dielectric and plasma conductive material.

11. The method according to claim 1, characterized in that pause T between the pulses in the sequence of pulsed vacuum arcs is chosen from the condition T<T1, where T1 is the time required for cooling the ends of microstrip to the substrate temperature.

12. The method according to claim 1, characterized in that when forming the dielectric layer thickness of the specified layer is chosen from the condition in which the diameter d1 of the flask in the dielectric layer from the layer of conductive material is within 2d2<d1<2Le, where d2 is a constant of the crystal lattice of dielectric substance, Le is the length of the shielding of the electric field is of potential displacement U1 conductive material.

13. The method according to any one of claims 1 to 11, characterized in that as a conductive material using a metal, semimetal or a doped semiconductor.

14. The method according to any one of claims 1 to 13, characterized in that the magnitude of the potential bias U1 change in the specified range from layer to layer during the formation of layers of dielectric and from layer to layer during the formation of layers of conductive material.

15. The method according to any one of claims 1 to 13, characterized in that the thickness d3 of each layer of conductive material located between the cathode and anode electronic lamps, and his work eϕ1 substance microstoria choose from conditions d3>2r and eϕ1>eϕ3, where r is the radius of microstoria, eϕ3 - work function substance microstoria.

16. The method according to any one of claims 1 to 13, characterized in that the at least one conductive layer located between the anode and cathode of electron tubes, serves as an additional cathode when the d3<2r, eϕ1<eϕ3, where d3 is the thickness of the layer of conductive material, r is the radius of microstoria, eϕ1 - work function layer of conductive material, eϕ3 - work function substance microstoria.

17. Vacuum chip with elements of type electron tube containing a substrate of semiconductor material, many microstrip of electrically conductive material height h and radiusing, placed on a substrate according to the topology of the vacuum integrated circuits that serve as the cathodes for a variety of electronic tubes, the space between which is filled with dielectric material, the dielectric layer placed on the substrate and serving interelectrode gap for each of the multiple electronic lamps, a layer of conductive material on the dielectric layer and which is the anode for each of the multiple electronic lamps, characterized in that the bulb of each of the multiple electronic lamps is a closed cavity on the end face of at least one microstoria, the form of which is defined in its formation form a closed equipotential surface, the cavity formed in at least one layer dielectric and at least one layer of conductive material, the thickness of the dielectric layer is determined from the condition in which the diameter d1 of the flask in the dielectric layer from the layer of conductive material is within 2d2<d1<2Le, where d2 is a constant of the crystal lattice of dielectric substance, Le is the length of the shielding electric fields conductive material when applying a substrate bias potential of U1, and the height h1 bulb is less than h/2 microstoria.

18. Vacuum chip on 17, characterized in that it contains at measures is one additional dielectric layer, posted on the conductive layer, and at least one additional layer of conductive material on at least one additional dielectric layer.

19. Vacuum chip on 17, characterized in that the thickness d₃each layer of conductive material disposed between the anode and cathode of electron tubes is in the range of d₄<d₃<2Le, where d₄- the thickness of a monolayer of conductive material.

20. Vacuum chip on 17, characterized in that in the case where the chip contains one additional dielectric layer and one additional layer of conductive material, the layer of conductive material on the dielectric layer serves as the control grid of each of the multiple electronic lamps, additional conductive layer serves as an anode of each of the multiple electronic lamps, an additional dielectric layer serves as an interelectrode gap between the control grid and anode, with many electronic lamps refers to the type of triodes.

21. Vacuum chip on 17, characterized in that in the case where the chip contains two additional dielectric layer and two additional layers of conductive material, the additional layer of conductive material placed on SL is e of the dielectric, serves as the control grid of each of the multiple electronic lamps, an extra layer of conductive material placed farther from microstrip, serves as the anode for each of the multiple electronic lamps, an extra layer of conductive material placed closer to Microstream serves as a shielding mesh for each of the multiple electronic lamps, and additional layers of dielectric are interelectrode gaps of electronic lamps, which are of a type tetrodes.