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Double-sided solar photoconverter (versions) Invention relates to the field of solar photovoltaic energetics, namely, to devices for direct conversion of solar energy into electric one. There are two versions proposed for a double-sided solar photoconverter (PC), comprising two identical solar elements (SE) on the basis of sensitised metal-oxide (MO) mesostructures, the illuminated surfaces of which are aligned in opposite directions. In the first version of the PC both SE are mounted on a common conducting rear contact from a flexible metal base with a conducting coating applied on its both surfaces, and upper conducting contacts represent flexible polymer transparent films with a conducting transparent coating applied onto them. In the second version of the invention both SE are mounted on a common conducting rear contact from a glass plate with a conducting coating applied on its both surfaces, and upper conducting contacts represent glass plates with a conducting transparent coating applied onto them. Sensitised MO mesostructures are applied onto the conducting transparent coating on polymer transparent films (version 1) or onto the conducting transparent coating on glass plates, used as the upper conducting contacts (version 2). As the sensitised MO mesostructures for both identical SE they use sensitised nanocrystalline metal oxides selected from the group: titanium dioxide, zinc oxide, nickel oxide, iron oxide or their mixtures. |
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Invention relates to the field of solar photovoltaic energetics, in particular, to devices for direct conversion of solar energy into electric one. A tandem solar photoconverter is proposed, comprising two solar elements arranged under each other, the upper of which is a metal oxide solar element on the basis of a mesoscopic layer of a sensitised metal oxide, and the lower one - a solid-state solar element. The mesoscopic layer of the sensitised metal oxide of the upper solar element has a thickness of 5.0-5.5 mcm, and the lower solid-state solar element in the photoconverter is a solar element based on mono- or multicrystalline silicon, at the same time the difference of voltage values of idle running of the upper and lower solar elements of the photoconverter does not exceed 0.1 V, and the mode of parallel electric connection of the upper and lower SE to the load is realised. The mesoscopic layer of the sensitised metal oxide is represented by nanocrystalline metal oxides selected from the group: titanium dioxide, zinc oxide, nickel oxide, iron oxide or their mixtures. |
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Method of making multiple-junction and multiple-electrode photovoltaic cells Photovoltaic device includes: a set of at least two photovoltaic cells (160, 260), an intermediate sheet material (300) placed between each photovoltaic cell, each photovoltaic cell comprising: two current terminals (185, 185'), at least one photovoltaic junction (150, 250), a current-collecting bus (180, 180'), and connecting strips (190, 190') which extend from the current-collecting bus to the current terminals, all the current terminals being located on the same side. |
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Photovoltaic module with stabilised polymer Invention relates to a composition for reducing yellowing and a method of producing said composition. The composition consists of a photovoltaic device, having a metallic component, a polyvinyl butyral layer which is in contact with said metallic component and a protective substrate, which is a second substrate which is in contact with said polyvinyl butyral layer. The polyvinyl butyral layer contains 1H-benzotriazole or a 1H-benzotriazole salt. |
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Solar battery module, where the following components are installed by-turn: the first solar element, comprising a substrate of the first type of conductivity, having a light-receiving surface and a non-light-receiving surface, and electrodes of mutually opposite polarity, accordingly shaped on the light-receiving and non-light-receiving surfaces, and the second solar element, containing the substrate of the second type of conductivity, having the light-receiving surface and the non-light-receiving surface and electrodes of mutually opposite polarity, accordingly shaped on the light-receiving and non-light-receiving surfaces, at the same time solar elements are adjusted during manufacturing so that the difference in the short circuit current density between the first and second solar elements makes up to 20%. |
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Flexible photoelectric module consists of series-arranged bottom carrier film, bottom reinforcing layer, bottom fastening film, solar cells electrically connected to each other, top fastening film, top reinforcing layer and top carrier film, wherein the top and bottom carrier and fastening films are made of material which is transparent for sunlight. The reinforcing layers used are opaque perforated films made of anti-adhesive material, perforations of which are in form of regularly arranged square openings with size ranging from 0.8×0.8 mm to 10.0×10.0 mm, lying at a distance of 0.5-0.8 mm from each other. |
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Solar battery for small-size spacecrafts and method of its manufacturing Result is achieved by increasing strength of connection of shunting diodes and solar elements, increased repeatability of the process of manufacturing of the solar battery of spacecrafts due to optimisation of the technology of manufacturing of shunting diodes and solar elements of the solar battery, and also switching buses that connect the solar elements and shunting diodes, which are made as multi-layer. The solar battery for small-size spacecrafts comprises the following: panels with modules with solar elements (SE) adhered to them, a shunting diode; switching buses that connect the face and reverse sides of the shunting diodes with solar elements, at the same time the shunting diode is installed in the cut in the corner of the solar element, at the same time switching buses are made as multi-layer, made of molybdenum foil, at two sides of which there are serial layers of vanadium or titanium, a layer of nickel and a layer of silver, accordingly. |
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Polymer photovoltaic module and method for production thereof Polyaniline is doped with a heteropolyanionic complex of the 2-18 series, having chemical formula [P2W18O62]6-. A doped polyaniline film 1 is deposited on a thin transparent conducting layer which may consist of indium (III) oxide or tin (IV) oxide 2, which in turn is sputtered onto a material 3, having high transmission capacity for electromagnetic waves in the range from 3·10-2 to 4·10-6 cm. Said material with the sputtered conducting layer and the polyaniline film forms one of the electrodes of the photovoltaic module, and a second counter electrode, which also serves as back wall of the article, can be made of conducting material 4, on the outer side of which are attached thermogenerators 5 with air or water radiators for removing heat 6, connected to each other by series-parallel electrical circuits 7, and the electrodes held with each other by side walls, which can be made of any non-aggressive dielectric material 8, and an aqueous electrolyte is poured between the electrodes, where pH of the electrolyte 9 may vary from 5 to 3; current terminals are respectively attached to the conducting material with the polymer film and to the conducting back wall of the article, and to output terminals of the thermogenerators 10 to form two independent electrical circuits. The invention also relates to a method of producing said module. |
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Grate of photogalvanic cells with mechanical detachment of cells relative to their support Use: to implement solar generators panels to ensure electricity supply of spacecrafts, in particular satellites. Essence of invention consists in the fact that each photogalvanic element of the grate is mounted on the substrate using the soft and self-adhesive and easily detachable fastening device, at that the rear side of each cell and the front side of the substrate are coated with a layer that improves their properties of heat radiation. |
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Vacuum element and method of its fabrication Negative pressure is formed in clearance between two flat light-transmissive components or translucent plates, for example, glass panels connected via strip for production of vacuum elements which comprise optionally fittings composed of at least one solar module (photovoltaic cell) and/or solar collector or display element. It is made of sealant so that the structure composed by the first component with strip and spaced therefrom but parallel with second component arranged therein. It is fed into vacuum chamber and compressed in vacuum. Note here that it optionally can be used for build-up of films between the components on the components and optional fittings. |
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Thin-film photovoltaic module having profiled substrate Invention relates to solar power engineering. The thin-film photovoltaic module has a main substrate; a thin-film photovoltaic device placed in contact with the main substrate, wherein said photovoltaic device has a current-conducting bus which protrudes from the surface of said device; a polymer layer placed in contact with said photovoltaic device; a protective substrate placed in contact with said polymer layer; wherein said protective substrate is profiled to provide an cut opposite said current-conducting bus; and said polymer layer is situated between said photovoltaic device and said protective substrate, wherein said current-conducting bus protrudes 0.0254-0.508 mm from said surface of said device, and said cut has a depth equal to the protrusion of said current-conducting bus plus or minus 0-20%. The invention also discloses a method of making thin-film photovoltaic modules and another thin-film photovoltaic module made using said method comprising defined steps. |
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Present invention relates to silicon multi-junction photoelectric converters of solar cell panels. The structure of an "inclined" silicon monocrystalline multi-junction photoelectric converter according to the invention includes diode cells with n+-p--p+ (p+-n--n+) junctions which are parallel to a horizontal light-receiving surface; the diode cells include n+(p+) and p+(n+) regions of n+-p--p+(p+-n--n+) junctions through which they are connected into a single structure by metal cathodes and anodes placed on the surface of n+(p+) and p+(n+) regions to form corresponding ohmic contacts - connections, wherein the n+(p+) and p+(n+) regions and corresponding cathodes and anodes are placed at an angle in the range of 30-60 degrees to the light-receiving surface; the metal cathodes and anodes are placed on their surface partially, and partially lie on the surface of an optically transparent dielectric which is placed on the surface of n+(p+) and p+(n+) regions, wherein they form an optical reflector with the metal electrodes and the optically transparent dielectric. Also disclosed is a method of making the described structure of an "inclined" silicon monocrystalline multi-junction photoelectric converter. |
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In accordance with the invention claimed solar-powered generator (100) contains thermoelectric elements adjoining solar elements and located below solar elements. Concentrated flow of solar energy is provided. Heat sink (104), with changeable temperature and efficiency, contacts with cold soldered seam (108) of thermoelectric device (103). Thermal resistance is calculated with respect to energy flow, which results in creation in thermoelectrical device (103) of temperature gradient equal to several hundreds of Kelvin degrees. Solar element preferably contains semiconductor with large width of prohibited energy zone. Generator (100) preserves relatively suitable efficiency (efficiency factor) in some range of cold seam (108) temperature. System of hot water can serve as heat sink (104). High values of efficiency factor are obtained due to application of nanocomposite thermoelectrical materials. One-piece construction of solar element and thermoelectrical elements provides additional advantages. |
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Multipurpose solar power plant Multipurpose solar power plant (hereinafter referred to as MSPP) refers to renewable power sources, and namely to use of solar radiation to generate electric power, provide hot water supply and natural illumination of rooms of different applications, which contains the following: an optically active transparent dome representing a rectangular biconvex lens, a photovoltaic panel, a solar collector, round flat horizontal dampers of hollow light guides, hollow light guide tubes, a heat-receiving copper plate of the solar collector, a solar light dissipator, micromotors of round flat horizontal dampers of hollow light guide tubes, round light-emitting-diode lamps, storage batteries, light and temperature sensors, an electronic control unit, a control panel, a storage tank, a heat exchanger, a pump, a check valve, six-sided copper pipelines, an inverter and a support with support racks to support MSPP structure. |
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Solar module with concentrator (versions) and method of its manufacturing In a solar module with a concentrator comprising a transparent focusing prism with an angle of complete inner reflection where n - coefficient of prism material refraction, with triangular cross section, having an inlet face, to which radiation drops along the normal line to the surface of the inlet face, and a face of radiation re-reflection, forming a sharp double-faced angle φ with the inlet face, and the face of output of the concentrated radiation and a reflection device, forming with the re-reflection face a sharp double-faced angle ψ, which is arranged unidirectionally with the sharp double-faced angle φ of the focusing prism, the reflection device comprises a set of mirror reflectors with length L0 having identical sharp angles ψ, set at a certain distance from each other, on the surface of the input face there are additional mirror reflectors that are inclined to the surface of the input face at the angle 90°-δ, which is arranged as differently directed with a sharp double-faced angle φ of the focusing prism, the lines of contact of the plane of the additional mirror reflector with the input face and the line of contact of the plane of the mirror reflector of the re-reflection device with the re-reflection face are in the same plane, perpendicular to the surface of the input, the length of projection of the additional mirror reflector to the surface of the input face is more than the length of the projection of the mirror reflector of the reflection device to the surface of the input face by the value In another version of the solar module with a concentrator comprising a transparent focusing prism with triangular cross section, with the angle of input of beams β0 and the angle of total inner reflection where n - coefficient of the prism, having an input face and the face of re-reflection of radiation, which form a common double-faced angle φ, the face of output of the concentrated radiation and a reflection device, which forms with the re-reflection face a sharp double-faced angle ψ, which is arranged unidirectionally with the sharp double-faced angle φ of the focusing prism, the reflection device comprises a set of mirror reflectors installed at a certain distance from each other with length L0 with identical sharp angles ψ, with a device of rotation relative to the re-reflection face, on the surface of the input face there are additional mirror reflectors, which are inclined to the surface of the input face at the angle 90°-δ and are made in the form of louvers with a rotation device relative to the surface of the input face, and the angle of inclination of additional mirror reflectors to the surface of the input face is arranged differently directed with the sharp double-faced angle φ of the focusing prism, axes of the rotation device of the additional mirror reflector on the face of input and axis of the mirror reflector rotation device on the re-reflection device with the face of re-reflection are in the same plane, which is perpendicular to the surface of the input, the length of projection of the additional mirror reflector to the input surface is more than the length of projection of the mirror reflector of the reflection device to the input surface by the value In the method of manufacturing of a solar module with a concentrator by making a focusing prism from optically transparent material, installation of a radiation receiver, a re-reflection device with mirror reflectors from tempered sheet glass or another transparent sheet material, they make and seal the walls of the cavity of the focusing prism with a sharp double-faced angle at the top equal to 2-12° and then they fill the produced cavity with an optically transparent medium, they install tightly a radiation receiver and assemble additional mirror reflectors with rotation devices on the working surface of the focusing prism and a rotation device for the re-reflection device. |
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Device for detecting electromagnetic radiation Device for detecting electromagnetic radiation has an electromagnetic radiation source, an electrical circuit consisting of an emf source, an ammeter and an electromagnetic radiation receiver with a photosensitive photoresistor. The electromagnetic radiation receiver is in form of a closed cuvette with a window for inputting electromagnetic radiation into the cuvette; inside the cuvette there are two electrodes and a three-dimensional photonic crystal consisting of densely packed monodispersed dielectric spheres that are transparent for the detected electromagnetic radiation, in the pores between which there are ultradispersed particles of a photosensitive semiconductor material - photoresistor. The dimensions of spheres inside the cuvette are comparable with or considerably exceed the wavelength of the detected electromagnetic radiation. |
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Disclosed is use of a) polyalkyl(meth)acrylate and b) a compound of formula (I), wherein residues R1 and R2 independently denote an alkyl or cycloalkyl with 1-20 carbon atoms, to make solar cell modules, primarily for making light concentrators of solar cell modules. (I). Also disclosed is a solar cell module and a version of said module. The solar cell module has operating temperature of 80°C or higher; full light transmission of moulding compounds in the wavelength range from 400 to 500 nm is preferably at least 90%; full light transmission of moulding compounds in the wavelength range from 500 to 1000 nm is preferably at least 80%. |
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Back sheet for solar cell module and solar cell module Back sheet for a solar cell module has a substrate sheet and a cured layer of a coating film made of coating material, formed on one side or each side of the substrate sheet, wherein said coating material contains a fluoropolymer (A), having repeating units based on fluoro-olefin (a), repeating units based on a monomer (b) which contains a cross-linking group, and repeating units based on a monomer (c) which contains alkyl groups, where the C2-20 linear or branched alkyl group does not have a quaternary carbon atom, and unsaturated polymerisable groups are bonded to each other through an ether bond or an ester bond. Also disclosed is a solar cell module using said back sheet and versions of a method of making the back sheet for the solar cell module. |
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Flexible photoelectric module comprises the following serially arranged components: a lower bearing film, a lower reinforcing net, a lower fixing film, electrically connected solar elements from single-crystal silicon, an upper fixing film, an upper reinforcing net and an upper bearing film. The bearing and fixing films are made of a material, which is transparent for sun light, and reinforcing nets are made of polymer threads, which are transparent for sun light and are impregnated with a substance or containing such substance with low coefficient of light absorption and scattering. Reinforcing nets are annealed nets from a thermosetting polymer. |
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Semiconductor photoelectric generator (versions) Semiconductor photoelectric generator with double-sided working surface is made as a matrix from switched microphoto cells with n+-p-p+(p+n-n+) diode structures, in which one or two linear dimensions of the microphoto cell are comparable with diffusion length of minor current carriers in the base area, and planes of diode structures are inclined at the angle φ, 30°<φ<150° to the working surface of the generator, along the entire area of the working surface at two sides of the generator there is a passivating film with thickness of 10-60 nm, arranged on the basis of one or two oxides of the following metals: tantalum, zinc, aluminium, molybdenum and tungsten, and above the passivating film there is a layer of a clearing coating. In the other version along the entire area of the working surface of the generator at two sides of the generator there are passivating and clearing films, made on the basis of one or two oxides of the following metals: tantalum, zinc, aluminium, molybdenum and tungsten, and also silicon nitride or carbide. |
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Flexible photoelectric module consists of series-arranged bottom carrier film, bottom reinforcing layer, bottom fastening film, solar cells electrically connected to each other, top fastening film, top reinforcing layer and top carrier film. The bottom and top carrier and fastening films are made from material transparent for sunlight, and the reinforcing layers used are layers of spheroidal elements made from material transparent for sunlight and coated with a layer of an anti-adhesive material. Dimensions of the spheroidal elements are in the range of 500÷1000 mcm. |
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Photoelectric bitumen tiles comprise a bitumen base attached to a photoelectric module, which relates to a roll type with a transparent upper contact, and also comprise at least one solar element from amorphous silicon supported with a metal flexible layer. Tiles represent photoelectric asphalt roof tiles, which comprise a bitumen base attached to the photoelectric module, besides, the connection is made by means of application of the photoelectric module onto the bitumen base and gluing. And besides, the bitumen base comprises a bitumen layer, at least with one support from a glass film, impregnated with oxidised bitumen and a bitumen self-adhesive mastic; besides, the photoelectric module comprises at least one solar element from amorphous silicon with three transitions and electric connecting facilities at one side; besides, the bitumen base is characterised by thickness of the bitumen layer of 5±0.5 mm; the support from the glass film is characterised with density of 85 g/m2; and has the following characteristics: rupture strength in longitudinal direction of approximately 1500 N; rupture strength in transverse direction of approximately 1500 N. Also the method is described to manufacture tiles, as well as the method to lay the roof by tiles. |
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Photocell consists of two or more monolayers of semiconductor spherical particles, one part of which has one type of conductivity and the other has an opposite type of conductivity. The particles of the semiconductor material have the size of the order of the electron diffusion length in said semiconductor. The top of the photocell is coated with antireflection layer. To increase conversion efficiency of the photocell, particles in different monolayers can have a different diameter, which improves absorption of radiation at different wavelengths. Instead of or along with a bottom transparent electrode, a metal electrode can be used, which provides both removal of generated charges and reflection of transmitted radiation back to the structure, ensuring more absorption thereof. |
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Solar concentrator module (versions) Solar concentrator module, according to the invention, has a receiver with a double-sided working surface, placed in the plane of symmetry between the focal axis of the concentrator and the surface of the concentrator, which is made in form of mirror reflectors, characterised by that the receiver is mounted in the plane of symmetry of a cylindrical concentrator; branches of the concentrator in the cross-section are formed by circles of radius R, which is equal to the height H of the receiver with centres at points O1 and O2, lying on the borders of the receiver in its top edge; wherein focal axes of the branches of the cylindrical concentrator, passing through the centres of circles O1 and O2 parallel to the top edge of the receiver, are directed in the North-South direction and are inclined in the northern hemisphere to the horizontal plane in the southern direction at an angle φ=90°-α, where α is the latitude. In the southern hemisphere, focal axes are inclined to the horizontal surface in the northern direction at an angle φ=90°-α and in the equator zone with a latitude from 30° of the southern latitude to 30° of the northern latitude, the focal axes of the cylindrical concentrator are parallel to the horizontal surface. Another version of the solar concentrator module described above is also disclosed. |
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Photocell of space laser radiation detector-converter Invention relates to wireless transmission of electrical energy between spacecraft based on directed electromagnetic radiation from one spacecraft to a photoelectric converter-based detector-receiver of a second spacecraft. The photocell of a space laser radiation detector-converter has p-type and n-type semiconductor layers, alternating contact strips on the working side of the photocell and a continuous ohmic contact on the rear side of the photocell, wherein a diffraction grating is placed on the working side of the photocell with given thickness δ of its photoactive region, said diffraction grating being made from opaque parallel contact strips with width b, which alternate with a constant spacing Δ and make up an ohmic contact with the semiconductor layer of the photocell, on which electromagnetic radiation of the laser with wavelength λ falls normally. The diffraction grating is made such that it satisfies given relationships that a protected by the present invention. |
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Apparatus for generating electrical energy using photovoltaic cells Apparatus for generating electrical energy using photovoltaic cells (3) lying on a bearing structure (2), particularly formed by bearing cables (21) and adjustment cables (22) or similar, with possibility of turning about at least approximately vertically aligned axis, thereby enabling them to follow the movement of the sun from east to west, and which are also able to turn about at least approximately horizontally aligned axes. According to the invention, the photovoltaic cells (3) are mounted on at least approximately parallel and approximately horizontally aligned bearing beams (20, 20a) or similar, wherein the bearing beams (20, 20a) or similar on one of their ends are attached to a bearing cable (21) or similar, on one hand with the possibility of turning about the at least approximately vertical axis and on the other with possibility of turning about their longitudinal axis, wherein the bearing beams (20, 20a) on their other end are connected to a turning device which is formed by at least one bearing and adjustment cable (22). |
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Frame device and method of making said device Frame device according to the invention includes a substrate having a peripheral edge; a frame, having a groove which passes along the length and breadth of the frame, engages with the peripheral edge of the substrate; and a sealing lying inside the groove of the frame, which passes from the substrate to the frame adjacent thereto, wherein the sealing includes foamed poly-α-olefin having setting time shorter than or equal to 1 minute. The group of inventions also includes a photovoltaic cell, a second version of the frame device, a method of making the frame device and the sealing. |
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Photovoltaic module design (1) has side walls (2), a front panel (3) with Fresnel lenses (4), a translucent back panel (5), solar cells (6) with photodetector areas (15) which are superimposed with the focal spot of the corresponding Fresnel lens (4) and lying on heat-removing bases (7), and bypass diodes. The solar cells (6) and the bypass diodes are placed at the centres of openings (8) in bars (9) made from structural metal with thickness H ranging from 0.4 mm to 0.8 mm. The front side of the bars (9) is coated by a dielectric layer (10) of thickness h1 and a metal coating (11) of thickness h2, and top contacts of the solar cells (6) and bypass diodes are connected to said front side. The diameter of openings in the metal coating (11) over the openings in the bars (7) is smaller than the diameter of openings in the dielectric layer (10) over the openings in the bars by 0.05-0.1 mm, and the total thickness of the dielectric layer (11) and the metal coating (10) h1+h2 satisfies the relationship: 0.1H≤h1+h2<0.2H. |
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Photoelectric device is an electro-optical converter (EOC), having in an evacuated metal-ceramic housing a photocathode which is applied on the output surface of the input window of the device, and a fibre-optic plate (FOP) with a cathodoluminescent screen on its input surface whose light transmission with aluminium and light-absorbing coating, having an absorption factor of not less than 0.97, is not more than 0.01%, and mated with a photosensitive charge coupled device (PCCD) by joining through a layer of immersion liquid of an area of the sensitive element of the PCCD with an area formed on the output surface of the EOC FOP, wherein the distance between the surface of the area of the sensitive element of the PCCD and the surface of the area formed on the output surface of the FOP, should not exceed 1 mcm for refraction index of immersion of about 1.5; the outer surface of FOP outside the vacuum unit, except the area under the area of the sensitive element of the PCCD, is coated with a light-absorbing coating with an absorption factor of not less than 0.97; the metal-ceramic housing of the EOC is rigidly joined by a fastening device to the housing of the PCCD, which is mounted in the groove of the fastening device and is joined to it by a compound; free space between the outer surface of FOP, walls of the housing of the PCCD and the housing of the fastening device is filled with a compound with light transmission of not more than 0.03 in the direction of the output surface of the FOP; the distance between the lower surface of the groove for the PCCD in the fastening device and the housing of the PCCD is 02-0.5 mm longer than the distance between the surface of the area of the sensitive element of the PCCD and the surface of the area formed on the FOP. |
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Photovoltaic module contains: a laminate of a) a transparent front covering, b) one or more photosensitive semiconductor layers, c) at least one plasticiser-containing film based on polyvinyl acetal with polyvinyl alcohol content of more than 12 wt %, and d) a back covering. The module is characterised by that plasticiser-containing films c) based on polyvinyl acetal have glass-transition temperature Tg of at least 20°C. The invention also relates to use of the films based on polyvinyl acetal with content of polyvinyl alcohol of more than 12 wt %, having glass-transition temperature Tg of at least 20°C for filling cavities present in photosensitive semiconductor layers or electrical connections thereof when manufacturing photovoltaic modules. |
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Solar module has a chassis, solar cells, structured glass and a textured reflecting panel with a geometric relief. Structural features of the solar panel are that the solar cells have double-sided sensitivity and are placed with spacing perpendicular to the structured glass, and the textured reflecting panel with a geometric relief is placed behind the solar cells. Placing the solar cells perpendicularly increases electric power generation and enables to stabilise their temperature conditions. |
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Invention can be used as a battery in different electronic devices which consume low current but are forced to operate without replacement of power sources for a decade. The essence of the invention lies in that the nuclear battery has a housing filled with isotope material, in which there is at least one semiconductor detector in whose volume wells are formed, wherein all dimensions of the wells are smaller than the free path of particles emitted by the gaseous isotope. The detector is in form of alternating n+, i (either ν or π) and p+-type layers in the sequence n+-i-p+-i-…-n+-i-p+, wherein these layers lie in planes which are perpendicular to walls of the wells; ohmic contacts are formed on n+-type layers, said ohmic contacts being electrically connected to each other. The same contacts are also formed to p+-type layers which are also connected to each other. |
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Method of making semiconductor structure with p-n junctions Method of making a semiconductor structure involves successive formation of n- and p-type layers on a semiconductor substrate via epitaxial growth, said layers forming not less than two interfaced two-layer components with n-p or p-n junctions between the layers. According to the invention, every two neighbouring components are interfaced with each other by microparticles of a conducting or semiconducting material introduced into the component interfacing zone, wherein the size of said particles is greater than the thickness of the space-charge region in said interfacing zone. |
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Frame device and method of making said device Frame device includes a frame, a substrate and sealing. The substrate has a first length, a first width and has a peripheral edge. The frame has a single adjacent longitudinal fragment, having a first end and a second end, where the longitudinal fragment is configured to form three corners when bent, and the length of the longitudinal fragment is equal to the length of the substrate. The frame also includes fastening means which join the first end and the second end of the frame when the frame is in a bent position, as well as a groove which passes along the length and width of the frame, where the groove engages with the peripheral edge of the substrate. The sealing is placed inside the groove of the frame, where the sealing passes from the substrate to the frame while adjoining it, and contains a foamed polymer. |
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Solar cell has a substrate having optical transparency; a photoelectric converter provided on the substrate, including a top-face electrode having optical transparency, a photoelectric conversion layer, and a back-face electrode having light reflectivity; and a low-refractive conductive layer, made of a conductive material having optical transparency, being adjacent to the photoelectric conversion layer, and lying on a side of the photoelectric conversion layer opposite to the substrate. The low-refractive conductive layer is placed between the photoelectric conversion layer and the back-face electrode. Only that low-refractive conductive layer lies between the photoelectric conversion layer and the back-face electrode. The thickness of the low-refractive conductive layer ranges from 40 nm to 80 nm, and the refraction index of the low-refractive conductive layer ranges from 1.4 to 2.0 relative wavelength from 450 nm to 1000 nm. |
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Apparatus for plasma activated vapour deposition for making silicon thin-film modules of a solar cell includes means of mounting the substrate, said substrate having an outer surface and an inner surface, a plasma burner mounted near said inner surface for deposition of at least one layer of a thin-film on said inner surface of said substrate, and means of feeding chemicals to said plasma burner, where said at least one thin-film layer forms said silicon thin-film modules of a solar cell. |
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Vertical multistage photoconverter consists of monocrystalline silicon crystals with flat diffusion p-n junctions stacked one on top of the other to form a light-receiving surface with alternating p and n regions, having the relief of the light-receiving surface in form of repeating longitudinal depressions lying such that the sectional plane of the relief, which defines its profile, is perpendicular to the direction of stacking p-n crystals. The profile of the depressions according to the invention has the shape of an open parallelogram in which the line corresponding to the bottom of the depression is parallel to the line L showing the virtual plane of the light-receiving surface - a surface without depressions, wherein the profile of depressions ensures a number of drops of the full light flux equal to 5. |
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Beta radiation-to-electrical energy semiconductor converter Disclosed is the design of a beta radiation-to-electrical energy semiconductor converter, having a semiconductor plate with a textured surface, a diode structure along the textured surface and a layer of radioactive substance on the textured surface. The textured surface of the semiconductor plate is in form of a plurality of through-channels having the shape of a circle, an oval, a rectangle or another arbitrary shape, and the radioactive substance, which contains a nickel-63 radionuclide, tritium or both, covers the walls of the channels and a large part of the remaining surface of the semiconductor plate. |
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Using polyamide as sealant for photovoltaic modules Disclosed is use of polyamide as sealant for photovoltaic modules, said polyamide being selected from polyamide 6, polyamide 66, polyamide 7, polyamide 9, polyamide 10, polyamide 11, polyamide 12, polyamide 69, polyamide 6 10, polyamide 6 12, PA-6-3-T, PA 61, polyphthalamide (PPA) or a group of copolymers of different aromatic or partially aromatic monomers. Disclosed also is use of the described sealant combined with filler material selected from ethyl vinyl acetate (EVA), polyvinyl butyral (PVB), ionomers, polymethyl methacrylate (PMMA), polyurethane, polyester, hot-melt or silicone elastomers for making photovoltaic modules. The invention also discloses use of a plastic composite containing carrier material selected from polyethylene terephthalate, polyethylene naphthenate or an ethylene-tetrafluoroethylene copolymer, as well as a layer of polyamide 12, joined as sealant on both sides to the carrier material in order to make photovoltaic modules. |
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Using polymer composite to produce photovoltaic modules Invention relates to use of a plastic composite containing carrier material selected from a group polyethylene terephthalate (PET), polyethylene naphthenate (PEN) or ethylene tetrafluoroethylene copolymer (ETFE), as well as polyamide-12 layers adjoining the carrier material on both sides to obtain photovoltaic modules. |
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Multistage photoelectric converter with nanostructure antireflection coating Multistage photoelectric converter with a nanostructure antireflection coating is based on a multilayer AIGaInP/GaInP/Ga(In)As/Ge semiconductor structure. The photoelectric converter has rear and front ohmic contacts and a multilayer nanostructure antireflection coating formed on the front surface of the structure in places free of ohmic contacts, consisting of three layers: SiO2 with thickness of 70-80 nm, Si3N4 with thickness of 25-35 nm and TiOX, where x=1.8-2.2, with thickness of 20-30 nm. |
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Electromagnetic radiation-to-electric current photoelectric converter with dopant gradient profile has a 250-1000 nm deep p-n junction with 5×1019 cm-3 of doping impurities in the n-layer or in the p-layer respectively; metal (gold or silver) nanoparticles with size of approximately 100 nm at the front surface between microcontacts; and an insulating layer between the nanoparticles, and an antireflecting coating on top of the entire structure, wherein the configuration and surface area of the isotype p-p+(n-n+) junction coincide with the configuration and surface area of sections with n+-p (p+-n) junctions under electrodes of the receiving side and the rear surface. |
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Structure and method of making silicon photoconverter with two-sided photosensitivity In a silicon photoconverter with two-sided photosensitivity, whose thickness is comparable to minority carrier diffusion length in the base region, having a n+-p (p+-n) junction at the front side, an isotype p-p+ (n-n+) junction in the base region at the backside, an antireflection film and a metal contact grid on the front side and backside, the antireflection film is such that intrinsic electric charge density is not less than 1.1011 cm-2, the sign of this charge is the same as that of majority carriers in the base region, wherein the n+-p (p+-n) junction and the isotype p-p+ (n-n+) junction under the contact grid is at a greater depth than in intermediate contact grids. Also disclosed are one more version and two versions of the method. |
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Optical power supply system for electronic circuits with application of one photovoltaic element Optical system of power supply, comprising a single photovoltaic element, which generates the first voltage as light drops on it; besides, the single photovoltaic element is a single diode; a voltage amplifier, connected with the photovoltaic element, which receives the first voltage from the photovoltaic element and generates the second voltage, which is higher than the first voltage, besides, the voltage amplifier is supplied only by the first voltage from the photovoltaic element, at the same time the first voltage is more than 1 volt. Also a system of a sensor is proposed, comprising a single photovoltaic element and a method of optical power supply to an electric circuit. |
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One of versions is disclosed in procedure for production of cast silicon consisting in contacting melt silicon with at least one seeding crystal of silicon in vessel with one or several side walls heated at least to temperature of silicon melting; also, there is at least one cooled wall. Further, the procedure consists in formation of solid massif of mono-crystal silicon, not necessarily, with at least two dimensions, each at least approximately 10 cm by cooling melted silicon with control of crystallisation. Also, formation of massif includes formation of interface of solid with liquid along rib of melted silicon which at least first is parallel to at least one cooled wall. Interface is controlled during cooling so, that it is transferred in the direction where distance between melted silicon and at least one cooled wall increases. There is produced cast massif of silicon of large dimension (for example, ingots with area of cross section of at least 1 m2 and up to 4-8 m2) not containing or practically not containing radially distributed impurities and oxygen induced defects of packing. |
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Photoelectric converter (versions) and method of making said converter (versions) Invention relates to design and technology of making optoelectronic devices and specifically to semiconductor photoelectric converters. The semiconductor photoelectric converter has areas with an n+ -p (p+-n) junction, coated with metallic contacts, and on the photosensitive surface a base region with p or n conductivity, with a deposited passivating, antireflection film. The n+ -p (p+-n) junction is in form of a plurality of periodically repeating 0.1-30 mcm wide micro-areas. The 10-300 mcm spaces between the micro-areas contain a base region with minority carrier surface recombination rate less than 100 cm/s. The distance between the levels of the n+ -p (p+-n) junction and the photosensitive surface is not greater than 50 mcm, and the width of the micro-areas is smaller than the spaces by at least 10 times. The disclosed invention seeks to increase efficiency and lower the cost of making the photoelectric converter. The invention also discloses a second version of the photoelectric converter and two versions of the method of making the photoelectric converter. |
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Photo electric converter (versions) and method of its fabrication (versions) Semiconductor photo converter comprises matrix made up of micro elements switched in parallel with the help of contacts with base region and doped regions of n+-p-n+(p+-n-p+) structures. Planes of p-n transitions and contacts to doped n+(p+) regions are perpendicular to operating side whereon radiation falls. One or two linear sizes of each micro element are comparable with double diffusion length of charge minority carrier in base region. Rear side of each micro element accommodates contacts to base region. Each micro element comprises regions with additional isotype p-p+(n-n+) transitions arranged along operating and rear sides and separated from p-n transitions by gap with width, at least, 10 times smaller the micro element size, while base and doped regions with no contacts comprises passivating clarifying film. Invention covers versions of above described photo converter and versions of its production. |
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Photo electric converter (versions) and method of its fabrication (versions) Semiconductor photo converter comprises sections with n+-p or (p+-n) junction and n+ or (p+) layers completely covered by metal contacts, and p- or n-conductivity basic region on photo sensitive surface with applied passivating clarifying film. N+-p or (p+-n) junction represents a hetero junction with wide-band n+ or (p+) layer and has multiple intermittent sections with 0.1-30 mcm width. 10-300 mcm-wide gaps between micro sections comprise basic region with the rate of surface recombination below 200 cm/s. Note here that distance between n+-p (p+-n) junction levels and photo sensitive surface does not exceed 50 mcm while micro section width is smaller than said gaps, at least, 10 times. Invention covers also one more version of photo converter design and two versions of its fabrication. |
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Systems of photoelectric converters of solar radiation System has an optical system which splits solar spectrum radiation into four light fluxes with different spectral ranges and four photoelectric converters (27)-(30) with a single p-n junction. The photoelectric converters (27)-(30) lie next to each other and are electrically connected to each other. The first photoelectric converter (27) is made from semiconductor material with Eg=1.8-2.3 eV; the second photoelectric converter (28) is made from semiconductor material with Eg=1.3-1.5 eV; the third photoelectric converter (29) is made from semiconductor material with Eg=0.9-1.1 eV and the fourth photoelectric converter (30) is made from semiconductor material with Eg=0.6-1.75 eV. |
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Present invention can be used in ground-based and space solar power installations based on silicon photoelectric converters of solar radiation designed for standalone power supply systems. The photovoltaic module design includes a bottom protective coating on which silicon solar cells with antireflecting coating are attached through a binding polymer film, as well as a top protective coating made from optically transparent glass or polymer material over the front surface of the solar cells, bound to the solar cells by an intermediate film made from optically transparent polymer material. On the side of the front surface of silicon solar cells, there is also an optically active layer which is an optically transparent polymer containing an anti-Stokes luminophor. |
Another patent 2531401.