Combined production of heat and electric energy for residential and industrial buildings with application of solar energy. RU patent 2513649.

FIELD: electricity.

SUBSTANCE: in accordance with the invention claimed solar-powered generator (100) contains thermoelectric elements adjoining solar elements and located below solar elements. Concentrated flow of solar energy is provided. Heat sink (104), with changeable temperature and efficiency, contacts with cold soldered seam (108) of thermoelectric device (103). Thermal resistance is calculated with respect to energy flow, which results in creation in thermoelectrical device (103) of temperature gradient equal to several hundreds of Kelvin degrees. Solar element preferably contains semiconductor with large width of prohibited energy zone. Generator (100) preserves relatively suitable efficiency (efficiency factor) in some range of cold seam (108) temperature. System of hot water can serve as heat sink (104). High values of efficiency factor are obtained due to application of nanocomposite thermoelectrical materials. One-piece construction of solar element and thermoelectrical elements provides additional advantages.

EFFECT: uniformly but sparsely distributed thermoelectrical segments in matrix from material with high heat-insulating properties reduces quantity of material required for segments without impairment of working characteristics.

17 cl, 8 dwg

The technical field to which the invention relates

The present invention relates to devices running on solar energy, and to a method of converting solar energy into useful forms of energy.

The level of technology

There are recognized early and continuous need for a cost-effective renewable energy sources. In this regard, significant efforts have been made to develop cost-effective generators of electrical energy, solar energy, intended for the use of solar energy. The main focus of these efforts was directed on creation of highly effective low-cost solar panels.

Solar panels are a photovoltaic cells that are essential for the direct conversion of solar energy into electrical energy. The underlying technology of solar panels based on p-n junctions. The difference between the concentration of charge carriers between the p and n regions of semiconductor material leads to diffusion of charge carriers and as a result to the creation of static electric fields in a semiconductor. Semiconductor has prohibited energy zone, which is the energy difference between the minimum energy of the conduction band of the semiconductor and the maximum energy of the valence band. Many semiconductors are prohibited energy zone located within the boundaries of the solar spectrum. Photons with energies greater than the width of the energy gap, that can be absorbed by the semiconductor and translate charge carriers from the valence band into the conduction band. The excited media flow under the action of electric field and provide the electrical energy.

Currently used solar panels can be part of the technology subdivided into approximately technology of crystalline silicon and thin film technology. Crystalline silicon is relatively poor absorber of light and requires a relatively large thickness (up to several hundred microns) of the material in comparison with materials such as cadmium telluride (CdTe) and gallium arsenide (GaAs)is used in thin-film technology. Currently, the solar panels on crystalline silicon provide higher efficiency (efficiency)than the thin-film solar panels, but are more expensive to manufacture. Good conversion efficiency for solar panels available on the market at present is 14-19%. You may receive a higher conversion efficiency.

The maximum efficiency of conversion of non-concentrated solar radiation into electrical energy using solar panel with a single p-n-junction at room temperature, approximately 31% in accordance with the well-known limit Shockley-Kwaysser. This limit takes into account thermodynamically inevitable rate of recombination of carriers and the mismatch between the bandgap of the semiconductor and the spectrum of solar energy.

The error is connected with the quantization of the energy of light. The wavelengths of light with an energy below the band gap cannot bring the charge carriers. Wavelengths with energy above the band gap can initiate the media, but the energy, the excess relative to the width of the forbidden zone, quickly turns into heat. Energy-Smoking zone, which constitutes about 1.3 eV, provides the greatest theoretical efficiency of solar panels with a single p-n-junction at room temperature.

Limit Shockley-Queisser for solar panel with a single p-n-junction can be exceeded due to the use of mnogovershinnoe patterns. A typical solar panel with mnogovershinnoe a layered structure contains a package of two or more of semiconductor materials with different width of the forbidden zone. The top layer has the greatest width of the energy gap. Ideally, the top layer absorbs spectrum with an energy equal to or greater than the width of the forbidden zone for the layer, and at the same time ignores the waves of greater length for use downstream layers.

Optical transparency of the layered structure generally requires that all layers have the same crystal structure and the same regular crystal lattice. Constant lattice characterizes the distance between atoms in the crystal lattice. Misalignment is constant lattice between different layers leads to the creation of dislocation and significantly affects the efficiency of solar panels with mnogovershinnoe structure.

Although the choice of materials for solar panels is limited, identified many of appropriate combinations and it is shown that they are superior to single junction solar cells. Due to the suitable splitting of the spectrum were obtained excellent results when using solar cells with two, three and four transitions. For example, dwuhvalentny element containing InGaP (1.9 eV) and GaAs (1.4 eV), kept a record efficiency of about 30% in the 1990s Were used three junction elements containing GaInP (1.85 eV), layer GaAs (1.42 eV) and Ge (0.67 eV), which demonstrated the value of an efficiency of about 40%.

Another way of increasing the efficiency of solar panels is to concentrate sunlight on the surface of the solar panel. In addition to the clear benefits of greater flow of light radiation per unit surface area direct radiation, is provided by the hub (compared to diffuse light radiation experienced by the panel, directly exposed to sunlight), provides better performance. Efficiency value equal to 41%, is a theoretical limit for an item with one transition, and 55% limit for dvuhterabaytnogo element. To direct sunlight optimal width of the energy gap corresponds to 1.1 eV. For dvuhterabaytnogo element with standard scheme, serial connections matching pairs with bandgap 0,77 eV and 1.55 eV is close to optimal. For trehprudnom element value 0,61 eV, 1,15 eV and 1,82 eV approach the ideal, as noted in the publication: .A.Green in. Third-Generation Photovoltaics: Advanced Solar Energy Conversion, p. 60-63 (Springer: Heidelberg, 2003).

Another enhancement to improve the efficiency energy conversion in obtaining electricity is to extract electricity from excess energy absorbed in the case when the electron is excited by a photon with an energy greater than the width of the energy gap. Initially this energy is retained by the charge carriers, which leads to the formation of "hot carrier". There are two main ways to use the hot carrier" to improve the efficiency of electric power production. One path leads to increased tension, and the other to increased electric current. The first one requires the charge carriers were extracted before their cooling, while the latter requires that hot charge carriers had sufficient energy to create the second of the pair electron-hole through ionization by collision. For each of these processes to be effective, it must be done with intensity, comparable to the speed cooling of charge carrier, which itself is very large.

The rate of cooling media can be significantly reduced through the creation of media in nanocomposite material that changes the dynamics of relaxation by quantum effects. Nanocomposite materials contain quantum wells, quantum wires and quantum dots. These structures limit the charge carriers by region of space, which is comparable to or less than the length of de Broglie waves for the charge carrier or the Bohr radius excitons in bulk semiconductor. In this respect, the most effective are quantum dots.

Quantum dots, consisting of very small single crystals of semiconductors (for example, gallium arsenide India) in the matrix of the other semiconductor (for example, gallium arsenide), can slow cooling media to a temperature at which the ionization by collision becomes significant. When ionization by collision of hot media gives up some of its energy to excite the second carrier and its transition from the valence band into the conduction band and at the same time, saves enough energy to stay in the conduction band. Ionization by collision can be achieved by using quantum dots, consisting of very small semiconductor crystals dispersed in the matrix organic polymer-semiconductor.

Removing the hot carrier can be achieved through the ordering of quantum dots in close-Packed spatial lattice with a sufficiently close relative position to ensure that there was a strong electron interaction and the formation of a mini-energy zones. These mini allow zone transfer of electrons from long range. These mini-zone provides a relatively quick migration in order formed from hot carrier current was assigned when potential higher than the normal capacity of the conduction band. To understand this mechanism, it can be noted that the energy of hot carrier is distributed among all carriers in the conduction band in a shorter time scale than the time scale in which the energy is distributed in the direction of thermal equilibrium in other ways. Thus, the total stream media is a hot stream.

It should be noted that in order to avoid the violation of the procedure when implementing the above mechanisms exist one of the applications of quantum wells, aimed at improving the efficiency of solar panels. Quantum wells can be used to establish and qualitative adjustment of the band gap semiconductor in which they were concluded. This allows you to set the width of the forbidden zone more consistent with the solar spectrum and provide flexibility in the choice of materials.

In addition, the size of the nanocrystals in the composite material containing semiconductor, has a significant impact on the width of the forbidden zone. This can be used to make energy carrier charges remained intermediate in relation to the valence band and the conduction band of the materials of the matrix. Such intermediate zone provide for a composite material the possibility of electric conversion of photons with energies below the band gap in semiconductors, having crystal structure, through a two-stage process of excitation of charge with their transition from the valence band to the intermediate zone and intermediate zones in the conduction band.

Many of these structural improvements budget only for the concentration of solar energy. Commercially available solar concentrators provide solar energy concentration equal to 500. Although such high concentrations justify the use of structurally complex semiconductor materials, they create the problem of strong heat, which is very unfavorable factor for characteristics of solar panels.

The above maximum efficiency of the solar panels with the increase in temperature is reduced, and lower solar panels. As noted in the patent document US 7148417, according to the National Aeronautics and space Agency (NASA), a typical silicon solar panel loses approximately 45% of energy with increasing temperature in degrees Celsius. At a temperature above 250C silicon solar panel does not inherently produce electrical energy. Solar panel using GaAs, allow to receive to some extent, the best result, losing only about 21% of energy per degree Celsius. Multi thin-film solar panels showed themselves, in General, worse, since the thickness of the layers is usually thoroughly agree, in order to equalize the currents produced by each layer. It should be noted that even 5% misalignment currents can seriously disrupt mnogovershinnoe solar panel (see: .A.Green in Third-Generation Photovoltaics: Advanced Solar Energy Conversion, p.63 (Springer:Heidelberg, 2003)). A common solution to this problem is to provide cooling.

Solar panel in addition to the generation of electric energy has been used to provide hot water for domestic use. As noted in the patent document US 2004/0055631, the use of solar panels in this way requires that the panel is operated at a temperature of at least approximately equal to 60 degrees C, which significantly impairs the efficiency of electric power production by the solar cell. The solution proposed in this application is to build a solar panel for part of the energy spectrum of solar radiation with energies below the band gap semiconductor. The solar panel is isolated from the heating elements, using part of the energy spectrum of solar radiation, which cannot be converted by the solar panel. Believe that this solution is more economical than alternative use of individual collectors of solar energy for production of electricity and for water heating. Another way of getting hot water is to extract heat from the system of the absorption of solar energy. In the case of solar energy with a high level of concentration of the waste heat can be significant.

Disclosure of the invention

The present invention provides generators powered by solar energy, and the appropriate ways. One aspect of the invention is a generator, a solar energy, containing a solar panel and thermoelectric device adjacent to solar panels and below it. Hot junction of thermoelectric device is dense thermal contact with the bottom surface of the solar panel. The heat sink is in contact with the cold junction of thermoelectric devices and cools the seal. Thermoelectric device has a branch n-type and p-type, containing one or more segments of a doped semiconductor material. At least one of the segments made of nanocomposite material in which quantum localization of carriers significantly reduces thermal conductivity of the segment.

Generally speaking, it is undesirable to place between the solar panel and a sink thermoelectric device. Indeed, it is easier and energy-efficient cooling directly solar panel. The present invention creates an exception to the General rule. First of all, the invention reduces the loss of efficiency of transformation of energy associated with thermoelectric device, through the use of the newly created materials for thermoelectric devices that significantly improve the performance of such devices. Secondly, the inventor found that in some situations a suitable heat sink that serves to maintain the solar panel when the desired temperature can be secured properly. In such situations, it may be unavoidable significant degree of heating of the solar panel. In when the only available heat sink is inappropriate to effectively maintain the temperature of the solar panel within a narrow temperature range, the present invention allows to implement it in the best way, because thermoelectric device can keep a high efficiency of conversion of solar energy into electrical energy, even if solar generator is heated because of a default heat sink entirely their functions. The invention is also useful because the solar panel can operate with cold starts, which is especially important for thermoelectric generator driven by the heat of the sun.

In method according to the present invention solar panel is configured to receive concentrated solar light, and thermoelectric device designed to extract heat from the solar panel and its transfer to the heat sink. At dawn and at other times when not much sun, a solar panel produces more electric energy than a thermoelectric device. On Sunny days the solar panel allows to provide heat to a large extent. As heat solar panels, it gradually produce less electric energy, at the same time thermoelectric device gradually produces more electricity. For solar panel valid heated to high temperatures and may be acceptable to the achievement of such a temperature at which thermoelectric device becomes the primary means of generating electricity.

Another aspect of the invention is a generator, a solar energy, containing photovoltaic device and thermoelectric device of a single design. As photoelectric device contains layers of semiconductor material, accrued on the elements of thermoelectric devices (grown)and thermoelectric device contains layers of semiconductor material, accrued on items photovoltaic devices. Unified design reduces material and allows you to hot junction of thermoelectric devices quickly heated up to the temperature at which thermoelectric energy conversion is effective.

Another aspect of the invention also refers to the generator on the sun energy containing photovoltaic device and thermoelectric device, in which thermoelectric device is adjacent to a solar panel and is located below it, with hot junction of thermoelectric devices is closely thermal contact with the underside of solar panels. Thermoelectric device has a branch n-type and p-type, containing one or more segments of a doped semiconductor material. Thermoelectric device is made of conformal surface solar panels and covers approximately the same surface. Branches of thermoelectric devices rarely, in the form of fine-grained structure, distributed in the matrix material with high heat-insulating ability, selected from a group that includes vacuum, gas and aerogel. These branches is less than 10% of the cross-sectional area, and at isolating account for more than 90%. This configuration reduces the number of semiconductor material required for branches, which, in particular, is an important, if used nanocomposite materials. Since these branches evenly distributed relative to the surface of the solar panel, with a very small, are located close to each other and very short, these branches effectively cool solar panel, despite their low spatial density and low thermal conductivity.

On the accompanying description of the drawings are used reference number of the position in accordance with certain conditions. The same reference number given on various drawings show the same elements in different positions, cases of the use or on different images. A situation where two rooms position differ from each other, but the same in the last two significant figures indicate that the objects under consideration are related as objects of the same kind, or are as a species and genus. From the drawings and context will be clear, what the ratio is, and will be or not notation, put about one element is equally applicable to the related items. Letter symbols after the figures used in order to distinguish repeated elements within a drawing or in one example.

Figure 1 - schematic example of the incarnation of the generator 100 on solar energy, functioning with heat sink and in the presence of sunlight.

Figure 2 - schematic example of the incarnation of the solar panel and thermoelectric device of integral constructions.

Figure 3 diagram that illustrates the segmentation in the design of thermoelectric devices.

Figure 4 - a graph showing thermoelectric figure of merit based on temperature for various semiconductor materials.

Figure 5 - a graph showing thermoelectric figure of merit nanocomposite material p-Si/p-SiGe.

6 - workflow diagram generator 100 on solar energy, functioning preferred way.

Fig.7 - view in the section along the a-a' line in figure 2, illustrates the branches of thermoelectric devices with large spaces, uniformly and in the form of fine-grained structure is distributed in the matrix with high thermal insulation properties.

Fig - example of implementation of system of hot water supply for household needs and electricity generation, which uses the solutions presented on each of the above figures.

The implementation of the invention

Figure 1 shows schematically the example running the generator 100 running on solar energy, which generates electricity through the use of sunlight 109. The specified generator 100 running on solar energy, contains used at the discretion of the system 101 concentrating solar power, solar panel 102 and thermoelectric device 103. For generator 100 necessary heat 104. Heat sink 104 can be performed as part of the generator 100 running on solar energy. Generator 100 generates electricity through the use of solar panels 102, and with the help of thermoelectric devices 103. These sources usually lead to the same voltage, unite and connect to the load.

System 101 concentrating solar power can be any suitable device that functions, ensuring the concentration of solar energy. This system 101 concentrating solar power can provide low, medium and high concentration of solar energy. Low level can be characterized by the coefficient of f concentration of solar energy in the range from about 2 to about 10. For the mean concentration value of this coefficient can be in the range from about 10 to about 100. The concentration ratio of more than 100 can be considered high. In the absence of concentrating solar power factor f is equal to 1.

Solar radiation falls on the surface of the earth with concentration, the maximum of which corresponds to approximately 1.3 kW/m2 . This value is sometimes used as the unit of density of a stream of solar energy "1 sun". The system 101 concentrating solar power factor f concentrations irradiates the upper surface of 105 solar panel 102 with the energy density of approximately f*1.3 kW/m 2 (f suns). In fact, the existing concentration of solar energy, which provides the system 101 concentrating solar energy at any given time may vary, depending on such factors as the position of the Sun in the sky, but you can expect that each system concentration of sunlight has a fairly well-defined maximum coefficient of f concentration that characterizes its functional opportunities and, as one might expect, to operate properly when the maximum intensity of sunlight.

Solar panel 102 may contain, and in most cases actually contains a large number of individual solar cells connected in series or in parallel. Solar cells are photovoltaic elements, suitable for generating electricity from solar radiation. The solar panel can be periodic structure of the solar panels smaller. Solar panel 102 may be such that each of these comprise panels smaller equipped with a thermoelectric device 103. Mutual arrangement between the solar panel 102 and thermoelectric device 103, given their proximity and heat transfer can be repeated for each individual element of the periodic structure. As it will be clear later, the integrated design of solar panels 102 and thermoelectric devices 103 means unity in respect of each item specified in the periodic structure.

Solar panel 102 (or each unit in the specified periodic structure) made thin, and as a result, has only two main surface. These surfaces can be called the front and rear or top and bottom. Front or top surface of 105 is the surface turned to sunlight. The upper surface of 105 and the bottom surface 106 are essentially consistent with each other, not taking into account the projections. They have approximately equal to the total surface area.

Solar panel 102 may contain photovoltaic element of any type, suitable to surrounding conditions that occur when using it. The examples described in section "art", is applicable in a broad sense, although preferably the use of photovoltaic cells operating at high temperature. In practice the choice photovoltaic cells reduces the need of long-term strength at high temperatures and ability to withstand heat cycles. Generator 100, using solar energy, designed with the expectation that solar energy will be heated by solar panel 102 to high temperatures, for example, to 202 C, 302 C, 402 degrees or to a higher temperature. The achievement of high temperatures of the solar panels promotes the source of high-temperature thermoelectric devices 103.

Solar panel 102 preferably suitable for photovoltaic actions at high temperatures. Solar panels that are designed to work only in the conditions of the environment, include a block solar panel with a single crystalline silicon and produced serially connected in series multi thin-film solar panels. Each type of solar panel is fast losing its efficiency with increasing temperature.

The adjustment solar panel 102 to work at high temperatures typically includes a choice of a semiconductor material with a large width of the forbidden zone. Examples of semiconductors with wide bandgap that can be used for the manufacture of solar cells adapted for operation in high temperatures, are GaN (3,2 eV), SiC, GaP (2.26 and eV). If temperaturecontainer structures, such as mass-produced multijunction devices, they either do not allow for high temperatures, or adapted to high temperatures.

Solar panel, designed for operation at high temperatures, contains at least one semiconductor p-n junction, the top in a layered configuration with the width of the forbidden zone greater than can be selected for operation at ambient temperature. Semiconductors with more bandgap use a smaller part of the solar spectrum than semiconductors with smaller width of the forbidden zone, however, semiconductors with a larger width of the forbidden zone lose less of their efficiency with increasing temperature as compared with semiconductors, having smaller width of the forbidden zone. For solar cells with a large bandgap neglect the efficiency of their work at room temperature in order to maintain greater efficiency at high temperatures.

The optimal value of the width of the forbidden zone above under "prior art", are not the most preferred for use in the claimed invention. Optimal ideal width of the forbidden zone depends on the specific application, but suitable choice can be made on the basis of theory or experiment. In solar panel with a single transition width of the forbidden zone of greater than 1.6 eV, would indicate fitness for use at high temperatures, and more than 1.8 eV - undoubtedly, testifies to this. In the devices with two transitions revealing the width of the forbidden zone for the upper layer of 2.0 eV, and the width equal to 2.2 eV, will be even more revealing.

Solar panel with a single crystal GaAs and one transition or thin-film solar panel with one transition are more suitable for operation at higher temperatures than most of the solar panels, but they are not designed or adapted for operation at high temperatures. The width of the forbidden zone for GaAs (1,4 eV) is high compared to the width of the forbidden zone for silicon that makes GaAs less sensitive to temperature than silicon. Because of these limitations will be used for the disclosure of the invention, GaAs fit for operation at medium temperatures, but not at high temperatures.

In the present invention high temperature is at least 203°N Functioning at the temperature of the solar panel 102, the maximum of which exceeds 402 C, typical generator 100 running on solar energy, to ensure the generation of electric energy with the use of thermoelectric devices 103. The adjustment to work at such high temperatures does not mean that solar panel 102 will not have degraded efficiency at temperature 203 C comparison with the efficiency of ambient temperature equal to 27 degrees Celsius S. Almost any (or each) solar panel will be showcasing the work efficiency decrease with increasing temperature. Adaptation to high temperatures involves the loss of efficiency of work at ambient temperature to increase efficiency at high temperature.

A good indicator of adaptation to high temperature for solar panels connected in multiple transitions is relative output current for various transitions depending on temperature. Transitions are usually connected in-series and agree on a current. Coordination of current includes control of thickness of the transition layer as long as each transition will not create almost the same amount of current. If the currents are not consistent, the results for effectiveness is unfavorable. Since the degree of influence of temperature on the electric current for various transitions in layered devices varies widely, coordination currents must be made for a specific temperature. The temperature at which each layer produces a current equal value under the action of solar radiation is the temperature at which adapted to operate a solar panel. These clarifications regarding approval currents applicable to the devices connected in multiple steps. The necessity to coordinate the currents can be avoided through the use of parallel connection. Parallel connection in multi-layer solar panels usually not used because of the complexity of the design, necessary for its realization. A compromise solution for the present invention could be using a parallel connection, but with the limitation of the maximum number of clicks to two.

Solar panel 102 has a low resistance to heat transfer through the thickness to thermoelectric device 103. If the solar panel 102 is too thick or conductivity, which is not suitable for its thickness, between the upper surface of 105 and the bottom surface 106 creates significant temperature gradient. Some temperature gradient is necessary to transfer heat to thermoelectric device 103, but in the preferred design this gradient will be very small. Large temperature gradient can reduce the production of electrical energy thermoelectric device 103 in steady state operation, but can lead to excessively high temperature solar panel 102.

Depending on the degree of concentration of solar energy used by the generator 100 running on solar energy, when designing a solar panel 102 may be important to consider thermal resistance. At low concentration of sunlight, probably, are suitable conventional materials, although care must be taken to the substrate material and the basis used in solar panels 102, by causing thermal resistance.

Low heat solar panel 102 in most cases the best, but it is advantageous to have and high heat capacity. High heat capacity reduces fluctuations in temperature and the rate of temperature change that reduces the mechanical stresses in the material and increases the reliability and service life of the panel. If not address the question of reliability, which can determine a minimum required heat capacity, the considerations to be taken into account are more complex.

For thermoelectric devices 103 should take into account the consideration of the opposite nature. Thermoelectric device 103 ensures the highest efficiency when a solar panel reaches steady-state peak temperature. When the Sun comes out, all the elements pane quickly reach this temperature, energy production using thermoelectric devices 103 will be maximal. If the period of heating a long, through thermoelectric device 103 will be transferred a large amount of heat at a lower temperature difference, and, thus, lower the efficiency of thermoelectric conversion. Similarly, the heat accumulated in solar panel 102, will be transmitted during cooling, not at a time when the difference in temperature remains at maximum.

Given the above, the heat capacity of solar panels 102 and near it is a subject for discussion, taking into account various considerations that are not associated with other design solutions. Conforming with the purpose of reducing or increasing the heat capacity can be justified in accordance with practical application.

Increased capacity can be created in the contact zone between the solar panel 102 and thermoelectric device 103 or above the surface of 105. To thermal resistance between the solar panel 102 and thermoelectric device 103 did not increase, thereby creating advantages, it may be preferable to use the transparent cover over the surface of 105, have a good thermal contact with the surface of 105, but it the advantage must be weighed against the loss in generating photovoltaic energy by absorbing the light of this covering layer.

Any structure that prevents excessive transfer of heat between the solar panel 102 and hot junction 107, can be used to provide additional heat capacity, if this additional heat capacity is desirable. Appropriate patterns include metal layers. Metals have a favourable combination of high heat capacity and thermal conductivity.

Used herein, the term "thermoelectric device" refers to the device that contains the hot junction and the cold junction and functioning in order to generate electricity directly from the heat, when the hot junction is maintained at temperatures above the temperature of the cold junction. Thermoelectric device contains 103 semiconductor of p-type and n-type. The concentration of charge carriers in these areas depends on the temperature. If between the hot junction 107 and cold junction 108 created a gradient of temperature the temperature gradient passes through these areas, and thereby creates a gradient charge carriers. Gradient charge carriers leads to the flow of electric current.

Figure 2 presents an example 203 execution of thermoelectric devices 103 (shown in figure 1). Thermoelectric device 203 includes p-branch 219, containing at least one segment of the semiconductor of p-type and n-branch 220, which contains at least one segment area of n-type semiconductor. Branches 219 and 220 cover the gap between the hot junction 207 and cold junction 208. Electrical insulation 222 isolate these branches. The hot junction 207 adjacent or within metal connection elements 218. Ohmic contacts connect each of the branches 219 and 220 with metal connecting element 218, while p-branch, metal connection element and n 218-branch 220 form a p-i-n-junction. Specified in p-i-n junction creates an electric field that passes through the branches 219 and 220. Branches 219 and 220 are ohmic contacts with electric conclusions a and 221b, located on a cold junction 208. These findings are electrically isolated from each other, although they may be part of the same metal connecting layer, while the connection layer is a system of metal bands in a flat matrix of dielectric material.

When the hot junction 207 support at a higher temperature than the cold junction 208, these branches are formed gradients of charge carriers, which causes the flow of electrons flowing down p-branch 219 and holes move (actually) down n-220 branches. The potential difference between the electrical conclusions varies depending on the temperature difference between the hot and cold junctions. Electric voltage is approximately proportional to the temperature difference. Electric current multiplied by the voltage network capacity, provide thermoelectric device 203.

Theoretical efficiency with which this device converts thermal energy into electrical energy, is determined by the well-known formulas that reflect the dependence of the efficiency on the temperature difference between the hot and cold junctions, the geometry and properties of the materials from which is made of p - and n-branches. The value of efficiency, ETA, is determined by the formula:

where T h the temperature of the hot junction, T c is the temperature of the cold junction, and M is determined by the formula:

where ZT is a dimensionless characteristic of the material, known as thermoelectric efficiency (coefficient of q-factor).

The parameter Z is determined from the relation:

where s is the specific electric resistance, k is the specific heat resistance, S is the Seebeck coefficient. T - average temperature.

These formulas are simplified, because the ZT is regarded as a constant value. For more accurate formulas necessary to take into account the dependence of ZT from temperature for each of the branches 219 and 220 and the fact that the semiconductor material is not the same for each branch or deliberately unequal within each branch. This should not downplay noted below advantages.

The first term in formula (1) is a thermal efficiency of the Carnot cycle. Value of efficiency of Carnot is the result of the manifestation of entropy and may not be exceeded by any type of device for converting thermal energy into electrical energy. The second member of the formula (1) shows the difference between thermoelectric device and is the ideal device. The main dependency for that member of the formula is the dependence on ZT, it is better to have large values of ZT. Until recently, the best values of ZT were approximately equal to 1.0 and limited efficiency of thermoelectric devices values, corresponding to approximately 20% of the efficiency of the Carnot cycle.

Figure 4 illustrates the quantitative data quality for various semiconductor materials in a range of temperatures. From the figure it is seen that different semiconductor materials are effective in different temperature intervals. This complicates the choice of semiconductor materials, as thermoelectric device 103 is designed for operation at the temperature gradient is created on the branches 219 and 220. As expected, the temperature on the length of the branches of changes dramatically. High temperatures will take place on the top of the 219 and 220 branches and low temperatures at the bottom. The material, which can provide good quality, may cause poor performance of the work at the bottom branches, and Vice versa.

Figure 3 illustrates the preferred technical solution and the preferred choice of materials. The solution is to generate each of the branches 219 and 220 from a number of segments, each corresponding to a different semiconductor material. The lower segments C and 220C chosen so that to provide high quality at lower temperatures, and the upper segments a and I choose so, to get high quality at high temperatures.

The value of the quality factor of many semiconductor materials, including those defined in figure 4, can be significantly increased by the introduction of quantum localization of carriers. The main effect of such quantum localization is to significantly reduce the heat. In many cases the value of the quality factor can be almost doubled. Figure 5 shows a typical approximate results for comparison with the figure 4. Quantum limit is provided nanoscale structures formed in the semiconductor matrix. For composite figure 5 nanostructures are particles crystal p-SiGe mixed sizes in the range from 1 to 200 nm. Nanoscale structures include quantum wells, quantum wires and quantum dots. The greatest benefits provide a quantum dot. These nanoscale structures are composite structures:

quantum dots are small crystals from the second, appropriately selected semiconductor material formed in the matrix of the other semiconductor. Suitable materials for nanostructures can be found for each matrix material. Some additional examples include material Bi 0,3 Sb 1,7 Te 3 .

One of the methods of formation of quantum dots is the alternating deposition several layers of matrix materials and deposition several layers containing matrix binder together with quantum wells from the second story. A detailed description of appropriate technology is provided in the publicly available information sources. Recommended materials and methods described by researchers at the Massachusetts Institute of Technology (MIT). Those who are not familiar with these materials and methods, can find them in various publications, including US patent documents 6444896, US 2006/0118158, US 2008/0202575 and US 2009/0068465. These patents and published patent documents included in this description fully by reference.

The parameters that can be adjusted in order to improve the result, include the thickness of the structures with quantum wells, spacing of their location and the relative content used alloys. Segmentation illustrated in figure 3, it remains desirable for nanocomposite materials, although it should be noted that these composite materials have high values of the parameter ZT at a temperature in the range, which varies depending on the source material. One of the ways to change the temperature at which there are high values of ZT, is the change in the composition of the alloy, forming nanostructure.

For approval of the heat flow and the production of electrical energy for the branches 219 and 220 there are two options. So, one kind branches can be made wider than the other, and the width is used here in the sense of a larger cross-sectional area. Another type of regulation is to place the base under one or another branch, so that one branch could be shorter than the other branches. The Foundation is a branch segment, made of heat conducting material, such as metal.

The design of the generator 100, solar power, determines the magnitude of the temperature gradients that will be generated in thermoelectric device 103. The main factors that determine the gradient, are the coefficient f concentrations of solar energy and the specific thermal resistance of thermoelectric generator 103. Specific thermal resistance can be adjusted by adjusting the height of legs 219 and 220.

The coefficient f concentrations of solar energy, together with the intensity of solar radiation determines the required heat flow. The entire spectrum of sunlight is concentrated and focused on the surface of the solar panel 102 with regard to the practical feasibility. While some of the solar energy is converted into electricity, a very significant part, as a rule, from 90% to 95%, will be transformed into heat energy. Configuration solar panels is made in such a way that all the heat was held in one direction, down, perpendicular to the surface of the solar panel 102. Thermoelectric device 103 made conformal with a solar panel 102. The density of energy flow through thermoelectric device 103, almost the same as the density of the flow through the lower surface of the solar panel 102.

The maximum amount of heat flow through a thermoelectric device 103, is determined by the maximum the intensity of solar radiation incident on the Earth's surface, which constitutes about 1.3 kW/m 2 , multiplied by the value of the coefficient f concentrations of solar energy. This can be done amendments to transform solar energy into electrical energy using solar panel 102 and accounting unwanted heat losses, and the result is still rough, is the heat flux per unit area for the passage of which should be designed thermoelectric device 103.

An important design decision that should be taken here into consideration is the selection of the setpoint temperature difference DT between the hot junction 207 and cold junction 208. The large temperature difference leads to more efficient production of thermoelectric energy, and lower the temperature difference causes the solar panel 102 becomes less heated and is more photovoltaic power.

Preference is given to the choice of a large magnitude DT in order to get into the area where the efficiency of thermoelectric conversion high, and the sensitivity of total energy generation to the cold junction temperature low. Preferably the value of DT is at least 200 C, preferably at least 300 OC C. higher values, for example, 500 C and 600 degrees centigrade can be desirable because DT remains high, even when the light level drops below its maximum. The main disadvantage of transition to all higher temperature differences is that the maximum temperature increase and the quality of the material begins to deteriorate, and he gradually loses efficiency.

Approximate height h branches to attain the preset temperature difference DT can be determined from the relation:

where k is properly calculated average thermal resistance for the branches 219 and 220. From this relation, we can see that the high thermal resistance allows branches shorter. The high value of the coefficient of f concentration of sunlight greatly reduces the required height of the branches. The cost of materials can make a significant contribution to the total cost of the system, and therefore, a reduction in the required number of semiconductor material is very profitable. Equation (4) shows that the concentration ratio of solar energy equal to 100, reduces the height of a semiconductor material in thermoelectric device 103 100 times. This effect is combined with an increase to 100 times the flow of sunlight per unit surface area. General drop of demand in semiconductor material corresponds approximately with the square of the values of f, i.e. 10000 in this example. Concentrating solar power allows the use of such materials, which in other circumstances would have been too expensive. For this reason, a low concentration of solar energy is preferred against the lack of concentration of light, it is preferable to moderate the concentration of light and high degree of concentration even more preferable. Another advantage of the concentration of sunlight is that facilitated the rapid achievement of the preset temperature difference; this creates an effect similar to the reduction of heat capacity.

Preferably all the heat that is transferred from the hot junction 207 for the cold junction 208, passes through the branches 219 and 220. Any amount of heat which passes through the insulation 222, does not contribute to the generation of thermoelectric energy. Materials branches 219 and 220 themselves usually good insulators, even if they are just ordinary semiconductors. When these semiconductors turned into nanocomposite materials, they become even better insulators: nanostructures improve thermoelectric efficiency due to the increase of thermal resistance of more than thermal conductivity of a composite material. There are only a few types of materials that are much better insulators. In particular, better insulation - air, vacuum and aerogel. Here the term "insulation materials" includes "vacuum".

Thermoelectric device 103 made conformal with a solar panel 102 for it to evenly took away the heat from the bottom surface 106. This determines the cross-sectional area for the device 103. Thermal resistance, which creates a thermoelectric device 103, also has a limit. If thermal resistance is too low, the desired temperature difference will not be achieved. If thermal resistance too high, solar panel 102 will be hot too.

The concept of reducing the number of semiconductor materials for thermoelectric devices 103 and, of course, for any of thermoelectric devices, which can provide a predefined heat flow per unit area of the surface with pre-implementation specified temperature gradient, is illustrated in figure 7, showing a cross section of thermoelectric devices 203 passing through the plane in which there is a line a-a' in figure 2.

According to this concept much of this cross-section (at least 50%) and volume, preferably at least 90%filled with highly efficient thermal insulation material, preferably material selected from the group comprising the vacuum, air, aerogel. This reduces the cross-sectional area, which can be used to transfer heat conduction through the branches 219 and 220 to its small part (less than 50%), preferably less than 10%. If the cross-section of the branches 219 and 220 reduced by 50%, thermal resistance between the hot junction 207 and cold junction 208 approximately doubled. To maintain the desired temperature difference and heat flow height h of the branches is reduced by half. If you use a number of segments, the regulation is applied to each segment. Reducing by half the cross-sectional area and height h reduces the amount of material required by 75%. Reducing the cross-sectional area of 90% and a height of 90% reduces the number of required thermoelectric semiconductor material on two orders. This is especially important advantage if used expensive materials.

Heat sink 104 can be a tool that functions with continuous removal of heat from the cold junction 108 of this intensity can reach the generator 100 running on solar energy, at steady state operation at constant maximum bright Sun. The specified heat sink 104 can be a fixed mass of material, the mass of water, for example, or contains a heat exchanger that transfers heat from cold junction 108 essentially inexhaustible stream, as in the case of the heat exchanger with ribs and constant flow of air. Although solar generator 100 is not limited by the type of heat sink 104, it is particularly suitable for a specific type of heat sink.

One such type of heat sink is partially closed system with such a limited ability perception of warmth that in conditions of the most bright Sun heat sink 104 greatly heated by the generator 100 running on solar energy. This fact means a significant change in subsequent temperatures in the solar generator is 100. For example, a significant change can cause cold junction of 108 will be at least 40 degrees hotter, and more significant change can lead to the increase of temperature cold junction, at least at 100 degrees C. Such changes will affect the steady-state temperature throughout the generator 100 running on solar energy. Any change heatsink temperature 104, which may lead to a rise in temperature of the solar panel at 40 C or more, is significant due to the reduction of efficiency, to which it may lead, if you have used conventional materials solar panel. In this context, a change of 100 C can be very significant.

When the ability of the heat sink 104 sense the warmth is so limited that changes in these temperatures occur regularly, the proposed generator 100 solar energy can provide a significant improvement in comparison with the known system of joint production of heat and electricity by means of solar energy that has no thermoelectric devices 103, or design that contributes to heat hot water for more than a few degrees above desirable the temperature. Generator 100 running on solar energy, designed thermoelectric device 103 was the most prevalent type of device for generation of electric power. This generator 100 saves significantly the possibility of functioning, despite the temperature changes that can have a negative impact on the performance of the known solar panels.

In this regard, in accordance with the method proposed in the invention, generator 100 running on solar energy, connected with such heat sink 104, which by its nature has a limited effect, or temperature changes, and as a result, the generator 100 running on solar energy, will work at the temperature of cold junction 108, which changes to 40 or more, and at the discretion of 100 K. The method involves the creation of large temperature gradients in thermoelectric device 103, and as a result of thermoelectric device 103 is prevailing to generate electric energy and produces more energy than solar panel 102. Large temperature gradient due to the fact that the solar panel 102 exposed to sunlight at a fairly high value of the coefficient f concentrations of solar energy. Establishing a fairly high ratio f concentrating solar power depends on thermal resistance of thermoelectric devices 103, selected so as to create the desired gradient at the expense of the coefficient of f concentration of sunlight, which is provided or is accomplished through a system 101 concentration of solar energy. The advantage of this method is that it provides the generation of energy efficiency is characterized by the lesser sensitivity to fluctuations in performance heat sink and cold junction temperature.

Heat sink 104 impaired heat can be a local system of hot water supply, depending on the amount of water it contains, in relation to the performance of generator 100. If the generator is 100 solar power is only a system of additional heating of water, through which hot water is maintained essentially at a constant temperature, the heat sink 104 will be effective, and in this case, in all probability, it is better to use normal heat generator that uses solar energy. On the other hand, if the hot water temperature varies in the range from 50 degrees to 95 degrees or from 25 C to 95 C, which is necessary for functioning of the hot water used as Telotte, in this case it is heat sink limited abilities.

Other types of heat sinks that may lead to the possibility of using solar generator 100 include, the temperature varies greatly by itself, or the use of solar generator 100 possible on the basis of the temperature of the heat sink or heat-transfer coefficient. For example, heat-104 can be cooling system of the vehicle. When the vehicle stops, and can function solar generator in order to maintain the temperature of the cooler, providing easy starts in cold days and reduction of harmful emissions during cold starts. Another possible use of the generator can be heated cabins, when the engine is not running, and thus can avoid having engine at idle. If it can be achieved to a sufficient cooling to prevent overheating with motor fan, then, for example, the air conditioning can be provided with electric power with the engine off.

When the vehicle is running, solar generator 100 can provide additional energy and, thus, increases the efficiency of the vehicle. In case of danger of overheating may be adequate functioning of the motor fan. For the generator may be sufficient such heat, the temperature of which varies significantly and may exceed 100 degrees C. Generator 100 running on solar energy, as a rule, will function effectively with heat sink in the interval of temperatures from 100 C to 200 degrees C.

To prevent overheating, solar panels can be used means of a slowdown or work stoppage generator 100, driven by solar energy. Suitable means may be tracking device for the Sun, if it is used. In that case, if it becomes desirable to prevent overheating, the tracking system can take manifold in the direction from the Sun. If the system 101 concentrating solar power provides controlled value of the coefficient of f concentration of sunlight, this ratio may be reduced. In most cases, however, it is preferable that the system 101 concentrating solar power provided for solar panel 102 as much light as it is capable of providing.

In another application, which may refer to the vehicle, to use cooling air flow. In this example, the heat sink 104 is a heat exchanger that transfers heat from cold junction 108 environment. This heat can be largely variable productivity, which depends on the ambient temperature and vehicle is moving or stopped.

Depending on the relative size of the heat sink 104 and solar heat generator 100 104 may be appropriate to maintain a fairly constant temperature so that conventional solar panel continued to work efficiently. For generator 100 running on solar energy, can be sufficient much less intensive cooling compared to a similar device, also using a solar panel. Generator 100 running on solar energy, can be designed to work effectively in a wide range of temperatures of the heat sink. Designing for high temperature gradients generated in thermoelectric device 103, redistributes power production in the direction of its elaboration of thermoelectric device 103 and reduces dependence on the solar panel 102.

Effective functioning of the solar panel 102 may be limited periods of heating during which thermoelectric device 103 develops such a temperature gradient, which is necessary for its effective work. Generator 100 running on solar energy, can be used to drive the vehicle or as part of a hybrid drive system. In such a system, it is preferable to obtain electrical energy immediately after the appearance of the Sun.

Thermoelectric generator produces 103 current with a voltage that varies depending on the temperature difference between the hot junction 107 and cold junction 108. Generator 100 on solar energy takes different amount of light for any selected day, the heat flow, temperature gradient and the resulting voltage will inevitably largely to change. Therefore, it is preferable that the generator 100 working on solar energy was provided by an electric system that contains a voltage regulator that serves for removal from thermoelectric devices 103 current when the voltage that it provides, and the issuing of this current with constant voltage.

In the operation of the generator 100 solar energy system 101 concentrating solar power concentrates sunlight 109 on the surface of 105 solar panel 102. Solar panel 102 absorbs most of this sunlight and converts it into electrical energy efficiency, which decreases with increasing temperature. Most of the absorbed radiation is converted into heat energy.

The bottom surface 106 solar panel attached to thermoelectric device 103. Thermoelectric device contains 103 hot junction 107 and the cold junction 108. Hot junction 107 - middle to the lower surface 106 solar panel 102 and is in direct thermal contact with the surface. With this mutual arrangement of thermoelectric device provides the main way of transmission of heat from the solar panel 102. If necessary, a solar panel 102 can be enclosed in a sealed and/or insulated to reduce the amount of heat dissipation. By eliminating or reducing other ways heat to almost all the heat energy absorbed solar panel 102, may be made through a thermoelectric device 103, and as a result it can be used to generate electricity.

Some portion of the incident radiation is reflected from the solar panel 102. In addition, a solar panel 102 will allocate energy by radiation. In order to re-submit this radiated and reflected light to re-reflecting back on the surface of 105, can be placed reflectors. These reflectors can be an SLR camera, which is essentially a volume above the surface of 105. Such reflectors provide significant efficiency gains.

The heat from the hot junction 107 is transferred to the cold junction 108. Part of thermal energy is transmitted in this way, is converted into electrical energy using thermoelectric devices 103. Thus, the generator 100 running on solar energy, generates electric power, at least in two places. Electric energy from these sources can be converted and combined to provide a single source of energy at a constant stress using electric elements, separated from the generator 100 running on solar energy, or United with him.

Heat sink 104 drains the warmth from the cold junction 108. This heat sink 104 can be highly effective and can maintain the cold junction 108 essentially at a constant temperature, regardless of the intensity of the flow 109 sunlight. As an alternative heatsink 104 may be ineffective, and in this case the temperature of the cold junction 108 changed. Changed accordingly, and the temperature of the hot junction 107, because the temperature difference is determined by the value of the specific heat flux, which essentially does not depend on the temperature of the cold junction. When the cold junction temperature increases, then, coming to her in line, increases and the temperature of the hot junction. The temperature of the hot junction increases up until the heat supplied to the solar element 102, will not match the amount of heat removed to a hot junction 107. Such a correspondence is established at approximately the same temperature difference, regardless of the cold junction temperature. Thus, the increase of temperature cold junction soon leads to an approximately equal to the temperatures of the hot junction 107 and solar panels 102.

The operation of the generator 100 running on solar energy, illustrated with figure 6 presents schemes 239 "machines with a finite number of States. Generator 100 begins to function inactive 240. Inactive 240 all elements of the generator 100 solar power are at temperatures close to ambient. In this connection, it should be understood that the main purpose of this application are devices intended for use in terrestrial applications. Inactive 240 usually corresponds night time.

The main event, which leads to the inactive 240, is the sunrise. This event sets the device 100 in low-temperature operating status 241. In the specified low temperature working condition 241 solar panel 102 generates electricity with an efficiency close to the maximum, while thermoelectric device 103 generates a small amount of energy or no work produces.

If light levels remain low, generator 100 remains in the low-temperature working condition 241. If the luminance level is increased, generator 100 immediately begins to produce more energy. Increased illumination quickly leads to heating of the solar panel 102, and generator 100 goes to operating condition 242 with average temperatures. When heated generator 100 to state 242 manufacture of the electric power thermoelectric device 103 usually will be greater than the energy produced by the solar cell 102.

As heat solar panel 102 temperature gradient in thermoelectric device 103 increases. The efficiency of solar panels 102 decreases, while energy generation thermoelectric device 103 increases. Preferably in working state 242 with average temperatures, when the temperature fluctuations, loss of efficiency solar panels 102 offset by increased efficiency of thermoelectric devices 103, and Vice versa, the effectiveness remains in a narrow range even in case of fluctuations in the levels light and produce energy. However, at the discretion of, the efficiency of solar panels 102 falls during this period before the interval at which the energy produced by the solar panel 102 is very low compared with the production of energy thermoelectric device 103, and General efficiency is essentially determined by the efficiency of thermoelectric devices 103, which, as a rule, monotonically increases with temperature.

At constant full sunshine generator 100 solar energy reaches the steady state steady state 243 with high temperature. The temperature of the solar panel 102 approximates the estimated maximum, although the specified temperature of the solar panel 102 varies with temperature of the heat sink 104, which may change. The temperature gradient in thermoelectric device 103 also approximates the estimated maximum depending on factors such as the season and time of day. Input light, almost maximal, and the efficiency of thermoelectric devices 103 close to the maximum. The efficiency of solar panels 102 reduced to such an extent that she or moderate or considerable, depending, adapted or no solar panel 102 for operation at high temperatures. Even if the solar panel 102 and designed to operate under high temperature, still thermoelectric device 103 usually will produce 2, 3 or 4 times more electric energy than solar panel 102.

Efficiency and electric power generator 100 running on solar energy, usually highest in steady state 243 with high temperature. Considerations for the selection of materials are probably a factor impeding design for even more high temperatures and temperature gradients, and thereby achieving higher levels of efficiency of the generator.

A quick transition to the steady state 243 with high temperatures at which there is most bright Sun, usually provides high efficiency generator. This transition is slowing in accordance with the heat capacity of solar panels 102 and any materials used to ensure contact solar panel 102 and thermoelectric devices 103. In that case, if the panel 102 and thermoelectric device 103 produced individually, to ensure good contact can be used solder or thermally conductive adhesive. A small air gap in the contact zone can lead to a rise in temperature of the solar panel 102 to a value much higher than the temperature of the hot junction 107, which can reduce the efficiency of solar panels 102 in the absence of any benefit for thermoelectric devices 103.

A more serious breach of contact can quickly lead to adverse fast growth of temperature, especially given the concentration of solar energy. Such a breach of contact can be caused by the deformation of one of the contact surfaces, which may be a result of cyclic temperature changes.

The concept, which solves some of these problems, is provided by solar panel 202 and thermoelectric device 203 having a uniform design. In this design the solar panel 202 and thermoelectric device 203 represent layers in composite construction, similar to the integrated circuit. Layers formed one above the other through a number of stages of technological processes. To obtain the desired result can be combined in various ways the processes of application of masking layer, etching and deposition. The majority of these stages are or may be the same as the stage, usually used to generate devices 102 and 103 separately in particular, in the case when a solar panel 102 is a thin-film solar cell and thermoelectric device contains 103 segments of nanocomposite material generated by stages deposition of many individual layers.

Alternatively, a solar cell can be formed first. One option is to use a temporary auxiliary substrate, for example, from Germany (Ge), as a framework on which to create a solar cell. All or only the lower layers of the solar cell 202 form on a backing of Ge. Then create layers, forming a thermoelectric device 203. Finally, the intermediate temporary substrate is removed and, if necessary, solar cell 202 subjected to additional processing to complete its manufacture.

Integral design provides a number of advantages, including more high thermoelectric efficiency due to lower heat capacity, excellent thermal contact between the solar panel 203 and hot junction 207 and a better ability to withstand temperature cycles by reducing the number of layers and prevent the use of thick layers.

An example of the application generator, a solar energy, is the system of 900, which is a combined local system of water heating and the generation of electric power through the use of solar energy. The system 970 contains a solar collector 971, adapted for installation on the roof. Collector 971 collects solar energy 109 and transmits it via a fibre-optical cable 972 to the generator 900 running on solar energy. The size of the collector 971 chosen in accordance with the amount of energy that an ordinary residential house will be used for water heating. This may be appropriate size in the range from about 1 to 10 m 2 , usually in the range from about 2 to approximately 6 m2 .

Generator 900 running on solar energy, placed inside the building 973, preferably close to a water tank 974. Water tanks preferably placed in the basement 975, and preferably should be avoided losses of thermal energy circulating hot water in the result of piping. To facilitate fitting, it may be preferable accommodation in the attic 976. Suitable tank size 974 can match its volume in the range from 100 to 1000 litres, preferably in the range from about 200 to about 600 litres.

Fiber light guide 972 passes the light on the surface of a solar generator 900 running on solar energy, preferably with a high degree of concentration of solar radiation. The intensity in the range from 50 to 250 suns may be preferable. At the intensity of 100 suns solar panel may have a surface in the range from 100 to 1000 cm 2 . SLR camera containing mirrors on the inside surface and surrounded the outside of the single-chamber glass vacuum insulated, catches and absorbs the warmth and the light coming from the solar panel. During the steady state operation with the most bright Sun in the solar panel generates the maximum design temperature gradient, which is 350 K.

The heat from the solar panel is passed through a thermoelectric generator to heat exchanger 978. The heat exchanger 978 forms part of a closed loop 979, through which water circulates between the tank 974 and heat exchanger 978. By placing generator 900 running on solar energy, near the bottom of the tank recirculated flow can be created at the expense of forces of thermogravitation. Alternatively can be used pump with electric drive.

The system of hot water containing a heat exchanger 978, contour 979 circulation and tank 974, forms a heat sink, which is a closed system with a limited capacity of absorption of heat. Changing user requirements can be partially resolved by changes in water temperature over a wide range. Directly under the generator 900 can be placed back gas heater to ensure minimum temperature equal to 50 degrees C. Water, before taking any measures for removal of excessive heat, can be heated up to the temperature of 95 degrees C. In the outline included mixing valve 980 for automatic regulation of dilution factor of water from tank 974, and water from the source 981 cold water to produce water consumed with the preset temperature. If the temperature of the hot water reaches the permissible maximum, the amount of heat can be reduced by discharge of hot water or revokeservice solar collector 971. At cyclic temperature change of the heat sink from 50 degrees to 95 degrees With the temperature of the solar panel is expected cyclically varies from 400 C to 445°C. This cyclic change, assumed not to affect the generation of electric power.

When using single junction thin-film solar cell from GaP and well-known materials for thermoelectric generator efficiency of electric power production of solar panel at room temperature can be approximately 10%. When the temperature of the generator 900 to its operating temperature efficiency of energy production of solar panels is reduced approximately to 7%. With increasing temperature increases power generation thermoelectric device. If for thermoelectric conversion used traditional semiconductors with the value of ZT, equal to 0.8, the efficiency of thermoelectric devices is expected steady state is approximately 9% of obtaining overall efficiency equal to 16%. In the case of the use of nanocomposite materials for the ZT values of 2.0 efficiency of thermoelectric devices is 16%, and the overall efficiency is 25%. If the temperature of the solar panel is reduced to 100 C, the overall efficiency drops to only 23%. Electric energy will decrease, because the temperature fall due to reduced light. The performance drop is faster at lower temperatures, but it remains high in a significant range of light levels and temperature of the water tank. High temperature design, adapting the solar panel to the operation at high temperatures and effective use of semiconductors, which allows the use of materials with high value of ZT, all these factors combine to ensure the creation of a system that is cost-effective and effective.

Industrial applicability

The present invention is useful for the production of energy from environmentally friendly method.

1. Generator (100) on solar energy, containing: a solar panel (102), with the upper surface (105) and the bottom surface (106) and made with the ability to generate electricity from solar energy (109); thermoelectric device (103), adjacent to a solar panel (102) and below the solar panel, and a thermoelectric device (103) contains the hot junction (107) and the cold junction (108) and hot junction (107) is closely thermal communication with the bottom surface (106) solar panels (102)with thermoelectric device (103) executed with the opportunity to develop electric energy, when the hot junction (107) has a higher temperature than the cold junction (108); and one or more electrical connecting elements for electrical connection with a solar panel (102) and removal from it of electrical energy and electrical connections with thermoelectric device (103) and withdrawal from it of electric energy; thermoelectric device (103) contains branch (219) n-type configured for the transfer of heat from the hot junction (107) for cold junction (108) by conduction, and branches (220) p-type configured for the transfer of heat from the hot junction (107) for cold junction (108) by conduction; branches (219) n-type contain one or more segments of the semiconductor materials doped with donor impurity, branches (220) p-type contain one or more segments of the semiconductor materials doped with acceptor impurity, and at least one of the segments made of nanocomposite material in which quantum localization of carriers significantly reduces thermal conductivity of the segment.

2. Generator (100) on solar energy according to claim 1, additionally contains the system (101) concentrating solar power configured to concentrate sunlight (109) on the upper surface of the solar panel (102), the above system (101) is the maximum ratio f concentrations of solar energy.

3. Generator (100) on solar energy in paragraph 2 in which the value of the coefficient f is 100 or more.

4. Generator (100) on solar energy on item 3, in which the solar panel (102) contains TFT unijunction or dvuhterabaytnye solar cells, with the top transition of a semiconductor material in solar cells has the width of the energy gap of more than 1,8 eV in the case of one transition or 2.0 eV in the case of two transitions.

5. Generator (100) solar power according to claim 2, characterized in that designed on the basis of the values of f and thermal resistance of thermoelectric devices (103) so that the solar panel (102) was heated to temperatures above 675 To sunlight when functioning in the conditions of the environment on the earth's surface, maintaining the temperature cold junction (108) below 100 C with heat sink (104).

7. Generator (100) on solar energy according to claim 2, additionally contains a heat sink (104)in contact with cold junction (108), while in the specified generator (100), in particular, the coefficient f, thickness, and conductivity of thermoelectric devices (103), the amount and type of heat sink (104), as well as materials of construction are designed and adapted to ensure continuous operation of the specified generator (100) in the conditions of the external environment and Sunny climate on the earth's surface when the temperature of the solar panel (102) to a temperature equal to at least 575 K.

8. Generator (100) on solar energy according to claim 1 in which the branch n-type (219) and/or branch of p-type (220) contains two segments (a, 219b, s, a, 220C) of various composite materials, each composite material has an operating temperature range, in which it thermoelectric figure of merit exceeds the quality of other material.

9. Generator (100) on solar energy according to claim 1, additionally contains a heat sink (104)in contact with cold junction (108), with the specified heat sink (104) contains pipelines (979) hot water tank (974) with hot water and closed circuit (974, 979, 978) water circulation between the tank (974) with hot water and cold junction (108).

10. Generator (100) on solar energy on item 9, additionally contains a solar collector (971) and one or more optical fibers (972)configured for transfer of solar energy from the solar collector (971) to solar panels (102), with a solar panel (102), thermoelectric device (103) and buck (974) with hot water placed in residential or industrial building (973)designed for use hot water from this tank (974).

11. Generator (100) on solar energy in paragraph 10, additionally contains the system (980) for mixing of water connected to the tank (974) with hot water and a source (981) cold water supply, with the specified mixing system (980) made with the possibility of diverting water separately from tank (974) with hot water and from the power supply (981) cold water and mixed water supply (982)allotted from these sources (974, 981), also mixing system (980) made with the possibility of automatic regulation of dilution factor of water allocated from the tank (974), and water coming from a source (981) cold water supply, which is essential for maintaining the water coming from the system (982) mixing at a temperature below the specified maximum temperature.

12. Generator (100) on solar energy according to claim 2, in which the concentration coefficient f is equal to 10 or more, when this system (101) concentrating solar power has a capability to provide directed to a solar panel (102) solar output exceeding 10 kW/m 2 , in clear sky conditions at the location of the Sun in Zenith; hot junction (107) thermoelectric devices (103) is dense thermal contact with the bottom surface (106) solar panels (102), the system is made with the possibility of transmission of heat through thermoelectric device (103) as the primary way of cooling solar panel (102) at the time of the established mode of operation, and thermoelectric device (103) has a coefficient of heat transfer between the hot and cold junctions (107, 108) less than (f/100) kW per m 2 (area of solar panels (102)) per degree Kelvin at room temperature, the system is configured to work with a solar panel (102) in a stable mode at a temperature of 100 To or more than the cold junction temperature (102) on Sunny days.

13. Generator (100) on solar energy indicated in paragraph 12, in which the concentration coefficient f is equal to 100 or more.

14. Generator (100, 200) on solar energy according to claim 1, characterized by the fact that contains layers of semiconductor material, grown on the elements of thermoelectric devices (203), or thermoelectric device (203) contains layers of semiconductor material grown in the elements of photovoltaic devices (202).

15. Generator (100, 200) on solar energy of claim 1, wherein thermoelectric device (203) has cross-section (a-a'), parallel bottom surface (106) solar panels (202), the area of which is approximately equal to the area of the lower surface of the solar panel (202), but such cross the section runs through the branches (219, 220) of thermoelectric devices (203), and the branches (219, 220) is less than 10% of the indicated cross section, and more than 90% of the cross-section is necessary for the material (222) with good insulating properties, selected from a group that includes vacuum, gas and the aerogel, with insulating material fills the volume between the branches (219, 220).

16. Generator (100, 200) on solar energy, containing: a solar panel (202)having the upper surface (105), the bottom surface (106) and are designed to generate electric energy from sunlight (109); thermoelectric device (203), adjacent to the solar panel (202) and below the solar panel, with the specified device contains hot junction (207), cold junction (208), and the hot junction (207) is closely thermal communication with the bottom side (106) solar panels (202), but such thermoelectric device (203) made with the possibility of generation of electric power, when the hot junction (207) has a higher temperature than the cold junction (208); and one or more electric connecting elements for electrical connection with a solar panel (202) and removal of electric energy from solar panels, as well as for electrical connection with thermoelectric device (203) and withdrawal from it of electric energy; thermoelectric device (203) contains branch (219) n-type configured for the transfer of heat from the hot junction (207) to the cold junction (208) by conduction, and branches (220) p-type configured for the transfer of heat from the hot junction (207) to the cold junction (208) by conduction; branches (219) n-type contain one or more segments of the semiconductor material doped donor impurity; branches (220) p-type contain one or more segments of the semiconductor material doped with acceptor impurity; and a solar panel (202) contains layers of semiconductor material, grown on the elements of thermoelectric devices (203), or thermoelectric device (203) contains layers of semiconductor material grown in the elements of photovoltaic devices.

17. Generator (100, 200) on solar energy, containing: a solar panel (202)having the upper surface (105) and the bottom surface (106) and implemented with the possibility generation of electric energy from sunlight (109); thermoelectric device (203)adjacent to a solar panel (202) and below the solar panel, with the specified device (203) contains the hot junction (207) and the cold junction (208), and the hot junction (207) is close thermal communication with the bottom side (106) solar panels (202), but such thermoelectric device (203) made with the possibility of generation of electric power, when the hot junction (207) has a higher temperature than the cold junction (208); one or more electric connecting elements for electrical connection with a solar panel (202) and discharge of electric energy from solar panels, as well as for electrical connection with thermoelectric device (203) and withdrawal from it of electric energy; thermoelectric device (203) contains branch (219) n-type configured for the transfer of heat from the hot junction (207) to the cold junction (208) by conduction, and branches (220) p-type configured for the transfer of heat from the hot junction (207) to the cold junction (208) by conduction; branches (219) n-type contain one or more segments of the semiconductor material doped with donor impurity; branches (220) p-type contain one or more segments of the semiconductor material doped with acceptor impurity; thermoelectric device (203) has cross-section (a-a'), parallel to the lower surface (106) solar panels (202), the area of which is approximately equal to the area of the lower surface (106) solar panels (202), but such a cross section passes through the branches (219, 220) of thermoelectric devices (203); and the branches (219, 220) take less than 10% of the cross section, and more than 90% of the cross-section is necessary for the material (222) with good insulating properties, selected from a group that includes vacuum, gas and aerogel, with insulating material fills the volume between the branches (219, 220).