Cassette for fusing elements of semiconductor power diodes

FIELD: physics, instrument-making.

SUBSTANCE: invention relates to power electronics and can be used in fusing elements of power semiconductor devices. The cassette for fusing structural elements of semiconductor diodes comprises a base made of a carbon plate in which are embedded ceramic rods, on the latter a plate is mounted, wherein flat-topped cavities with depth equal to (1.5-2.5) of the diameter of the ceramic rods are formed on the outer edge circle of the ceramic rods. In the same plate on the inner edge of the ceramic rods there is a flat-topped cavity with a diameter equal to or greater than 10% of the diameter of a thermal compensator. In the region of the bottom of the cavity there is a through-hole, the lateral surface of which is inclined relative to the normal to the surface of the plate by an angle of 3-5 degrees to provide quality setting of elements of the semiconductor device in the cassette. The size of the diameter of the through-hole in the region of the surface of the ceiling of the flat-topped cavity is equal to the inner diameter on the edge of the ceramic rods.

EFFECT: invention provides high efficiency of layout and recess of elements of semiconductor diodes, facilitates the process of setting structural elements of a semiconductor diode in manual and automatic mode.

3 dwg

 



 

Same patents:

FIELD: electricity.

SUBSTANCE: manufacturing method of a semiconductor instrument involves application of an epitaxial layer, formation of areas of an emitter, a collector and a base that is shaped by alloying with carbon with concentration of 2.1-2.41019 cm-3 with further annealing at the temperature of 500-550C during 50-60 s.

EFFECT: providing a possibility of reducing density of defects; improving parameters, quality and increasing percentage of yield.

1 tbl

FIELD: electricity.

SUBSTANCE: cassette for fusing elements of power semiconductor diodes comprises a base made of a carbon plate, wherein along the working circle of a temperature compensator there are flat-topped cavities with the depth h=(1-2) of the diameter of ceramic rods. In the cavity there are the ceramic rods with the diameter of 4-7 mm protruding over the surface of the carbon plate to the height H>(10-20)% of the height of elements in the semiconductor diodes assembled into the integral structure.

EFFECT: reduced pollution of the cassette operating surface at the simultaneous free discharge of vapours of highly volatile materials to the environment.

1 dwg

FIELD: electricity.

SUBSTANCE: invention is referred to semiconductor engineering and may be used in the manufacture of detectors for electromagnetic emission of different length. The essence of the invention lies in the application of a semiconductor layer of a required thickness to a ceramic, glass or polymer non-conducting plate. Then the above plate is cut into strips of a required width and the obtained strips are connected with the formation of a laminated plane wherein the strips of ceramics, glass and polymer and the strips of the semiconductor material are interchanged; then the received plane is cut into strips in the direction perpendicular to the initial position of the ceramic, glass or polymer strips and the semiconductor strips, then the strips of ceramics, glass and polymer are inserted into cuts and all the strips are interconnected. A common polarising electrode is connected to the received matrix surface at one side and at the other side individual electrodes are mounted to each semiconductor cell of the matrix.

EFFECT: potential manufacturing of detector matrices of any required size.

2 cl, 1 dwg

FIELD: chemistry.

SUBSTANCE: method of obtaining sensitive element of thermal receiver matrix based on vanadium oxide represents application of vanadium metal film and electrodes by methods of magnetron dispersion and further lift-off lithography on dielectric substrate. After that, high-density electric current is passed through vanadium metal film, which results in its heating and thermal oxidation. After structure heating and formation of oxide VOx, current isswitched off, and cooling of formedthin-filmed element takes place.

EFFECT: invention makes it possible to considerably simplify method of manufacturing sensitive element of thermal receiver matrix.

2 cl, 1 dwg

FIELD: physics.

SUBSTANCE: method is based on irradiating a surface with a moving laser beam in areas of the surface of the material with an absorption coefficient of not less than 3104 cm-1 at the laser wavelength, wherein each area is irradiated using a series of laser pulses with pulse duration of not more than 30 ns, and energy density F of the laser beam in the irradiated area is set in the range F=0.005-1.0 J/cm2 to enable splitting of the surface layer of the material without melting and forming on the surface of the material sub-micrometre cracks, slits and flakes with size ranging from 0.05 mcm to 0.8 mcm.

EFFECT: simplified method of producing micro- and nanostructures for a wide range of materials.

12 cl, 1 tbl, 7 dwg

FIELD: chemistry.

SUBSTANCE: invention relates to a method of forming a transparent doped layer containing zinc oxide on a polymer substrate for optoelectronic devices and a transparent doped layer. The method includes contacting a polymer substrate with at least one precursor containing a dopant and zinc, and exposing to ultraviolet light during chemical vapour deposition to decompose at least one precursor and deposit a layer on the polymer substrate. The polymer substrate is selected from a group consisting of fluoropolymer resins, polyesters, polyacrylates, polyamides, polyimides and polycarbonates. The contacting step is carried out at pressure approximately equal to atmospheric pressure.

EFFECT: providing a chemical vapour deposition method for depositing doped zinc oxide films on polymer substrates for use in optoelectronics.

12 cl, 1 tbl, 8 dwg, 2 ex

FIELD: electricity.

SUBSTANCE: method for carrier concentration determination in semiconductors consists in passage of high-frequency current through a transition shifted both in backward and direction directions, receipt of data on carrier concentration at the depletion region depth out of a production of the second harmonic current amplitude and the first harmonic voltage, which is inversely proportional to charge carrier concentration, detection of a surveyed object by scanning at an atomic-force microscope with conducting probe, formation of the barrier contact to the surveyed nano-object by the microscope probe. The device for implementation of the above method comprises 28 elements.

EFFECT: local detection of concentration of free charge carriers in semiconductor micro- and nano-structures.

2 cl, 1 dwg

FIELD: chemistry.

SUBSTANCE: solution contains indium (III) salt, tartaric acid, thioacetamide, hydroxylamine hydrochloride with the following reagent concentration, mol/l: indium(III) salt - 0.01-0.2; thioacetamide - 0.01-0.5; tartaric acid - 0.005-0.2; hydroxylamine hydrochloride - 0.005-0.15.

EFFECT: invention makes it possible to obtain films of indium sulphide, which are characterised by higher values of thickness with the simultaneous preservation of high quality of the film surface.

1 tbl, 2 ex

FIELD: physics, computer engineering.

SUBSTANCE: invention relates to computer engineering and specifically to digital signal processing. The heterogeneous processor comprises: a universal processor with a port, an input/output unit with a port, a RAM controller with a port, a unit for rapid execution of digital signal processing algorithms with a port, which consists of a memory direct accessing controller, a program memory unit and a computer section control unit, each consisting of a register file unit with ports, connected to the port of the computer section control unit, a local ROM unit and an arithmetic logic unit, consisting of input register units, output register units, multiplier units and adder units, installed in a number which is sufficient to execute BCD operations for each circuit, where B, C and D are complex numbers, real and imaginary parts of which are 32-bit floating-point numbers, and the processor is equipped with a buffer memory unit with ports.

EFFECT: low power consumption per unit output and high processor throughput.

3 dwg

FIELD: process engineering.

SUBSTANCE: proposed device can displace the substrate in several axes with the help of manipulator equipped with electromagnetic moving yoke at its end. Note here that said manipulator is arranged at rotary lifting assy. Said electromagnetic guide support is equipped with active moving element. The latter is fitted at stationary passive element with the help of magnetic supports arranged across magnetic supports. The latter retain active moving element at passive element at equilibrium and as-suspended. Sais active element is equipped with rotary lifting assy. The latter comprises external tube secured vertically at active element. Magnetic supports are arranged inside external tube at equal spacings on external tube outer surface for contactless direction of internal tube in vertically between two extreme positions.

EFFECT: transfer of substrates without friction and formation of particles.

21 cl, 14 dwg

FIELD: air conditioning for semiconductor wafers and/or hybrid integrated circuits.

SUBSTANCE: proposed method includes preparation of at least partially closed space 1 accommodating unit 10 to receive wafer or hybrid integrated circuit and passage of dry fluid through unit 10 to control its temperature. At least part of fluid leaving unit 10 is used for air conditioning in mentioned space 1. In addition, invention specification includes air conditioner description.

EFFECT: enhanced efficiency of air conditioning.

20 cl, 5 dwg

FIELD: electricity.

SUBSTANCE: device for double-sided processing of plates, for example, photomasks, consists of the following components installed on the basis - loading and unloading cassettes, mechanisms of their stepwise displacement, the first and second independent transporters, unit of double-sided hydromechanical cleaning of plates, unit of megasound cleaning. At that device is additionally equipped with unit of plates drying with the help of heater, mechanisms of plates extraction from unloading cassette and load of processed plates in loading cassette, equipped with lamellate plate holders and installed with the possibility of alternating motion in horizontal plane, at that the first and second transporters are equipped with plate carriers, which are installed on rods with the possibility of alternating motion in horizontal and vertical plane, unit of double-sided hydromechanical cleaning of plates is equipped with two grips that are installed in rod rocker with the possibility of alternating motion in mutually perpendicular directions, and unit of plates drying consists of plates holder, which is made in the form of four needles with adjustable gap between low side of plate and heater plane.

EFFECT: increase of device functional resources; of its processing quality and reliability.

9 dwg

FIELD: electrical engineering.

SUBSTANCE: present invention relates to devices for holding semiconductor wafers during transfer in the manufacturing process. The carrier for dump transfer of semiconductor wafers is made from four fluoroplastic rods. Two lateral rods are placed on the sides of semiconductor wafers in the carrier and one bottom rod, which acts at the bottom of the carrier, is placed below the semiconductor wafers in the carrier. Lateral rods are placed such that, their longitudinal axes and centres of wafers in the carrier lie in the same plane. Slots for fitting-in the semiconductor wafers are brought together such that they lie in the same vertical plane, and are made for holding wafers in this plane, perpendicular the axis of the rods. Slots in both lateral rods have a flat-topped shape. The fasteners at the ends of the rods are made with possibility of fastening, after putting the semiconductor wafers in the carrier, the fourth rod, acting as the cover. The fourth rod is also made with slots, coinciding with the slots in the lateral and bottom rods. The shape of slots in the fourth rod is a mirror reflection of the shape of slots in the bottom rod for holding the wafers during transfer.

EFFECT: invention prevents loss of wafers during transfer due to prevention of wafers getting stuck in the slots.

FIELD: physics; conductors.

SUBSTANCE: invention relates to material science and can be widely used in semiconductor electronics. The synthesised triple molybdate, containing lutecium molybdate, has the composition Rb5LuHf(MoO4)6 and has semiconductor conductivity. Intrinsic electron conductivity of the triple molybdate results from lutecium atoms with a special electron configuration.

EFFECT: increased operating temperature of semiconductor devices based on the proposed semiconductor.

FIELD: machine-building.

SUBSTANCE: invention related to flowing media ejection device and to the device control electrical chain. Half-conductor system contains an undercoat, which has first surface, first insulation material, located on at least the first surface segment, and first insulation material contains many holes, which forms a route to the first surface, a first conducting material, located on the first insulation material, in a way that many holes basically are free of the first conduction material, a second insulation material, located on the first conduction material and partly on the first insulation material, in a way that many holes basically are free of the second insulation material, and second conduction material, located on the second insulation material and inside of the many holes, in a way that some part of the second conduction material, located on the second insulation material, has electrical contact with the undercoat.

EFFECT: invention has higher technical requirements at manufacturing cost decrease.

60 cl, 9 dwg

FIELD: process engineering.

SUBSTANCE: invention relates to electronics engineering and can be used to produce crystals of thermal transducers and thermometers. Proposed method comprises forming marks by diamond cutter on plate surface and separation by bending the plate. Note here that marks are formed on both sides of the plate. Marks arranged on plate side extended in separation, are formed to depth of 1.1 to 1.3 of coat thickness, while those on contracted side are formed to depth of 2.5 to 3.0 of coat thickness.

EFFECT: higher reliability and yield of ready crystals.

3 dwg

FIELD: electricity.

SUBSTANCE: in method of gripping of semiconducting plates for loading and unloading, gripping is done in the following manner: vacuum arrives to fluoroplastic tube 3, then it arrives to spatula-like fluoroplastic tip 1, by pressing valve 4, vacuum is sent through holes 2 to plate, vacuum supply is controlled with the help of valve 4, vacuum is sent at the pressure of 0.8 kg/cm2, number of holes on tip is 5, diametre of holes is 3 mm.

EFFECT: invention eliminates possibility of metal touching surface of semiconductor plates, provides for reduction of cracks and dents in process of loading and unloading, and provides for full coverage of semiconducting plates and increased percentage of good yield.

1 dwg, 4 ex

FIELD: electrical engineering.

SUBSTANCE: device (10) to apply uniform thin layer of fluid, form example, phosphoric acid on substrates (12), particularly on silicon elements intended for photoelectric applications, comprises working chamber (14) with fluid vessel (16) and high-frequency ultrasound device (11) transforming fluid into its vapors (15), conveyor (13) arranged under fluid vapor discharge channel (25) of aforesaid chamber (14). To produce above described device (10), inner cross section of fluid vapor discharge channel (25) of chamber (14) gets narrowing toward conveyor (13) to come into through channel (40) for substrates (12) that covers conveyor (13). Note here that inner cross section of fluid vapor discharge channel (25) and that of through channel (40) are, preferably, equal.

EFFECT: possibility to apply fluid uniformly on surface area and through volume of said silicon elements.

22 cl, 2 dwg

FIELD: physics.

SUBSTANCE: holder for group transportation of semiconductor plates is made from four fluoroplastic rods. Two lateral rods are placed on the sides of the semiconductor plates in the holder and one bottom rod, which acts as the bottom of the holder, is placed below the semiconductor plates in the holder. The lateral rods are placed such that their longitudinal axes and centres of the plates being treated in the holder lie in one plane. Grooves in the rods are merged to ensure that the treated plates lie in the vertical plane, perpendicular the longitudinal axes of the rods. Grooves in both lateral rods have a flat-topped cross section. Attachment devices from the ends of the rods enable attachment of a fourth rod which acts as the cover after putting the semiconductor plates into the holder. The fourth rod also has grooves which are merged with grooves in the lateral and bottom rods. The shape of the grooves in the fourth rod is a mirror reflection of the shape of the grooves in the bottom rod in order to hold the plates during transportation.

EFFECT: invention prevents loss of plates during transportation by preventing sticking of plates in the grooves after high-temperature operations and when reloading the plates.

FIELD: physics.

SUBSTANCE: half of the plates in form of a first stack are transferred from a transporting holder into a ready position outside said holder. The other half of the plates in form of a second stack are unloaded from the transporting holder. The second stack is turned such that semiconductor plates in the second stack are turned 180 relative the position of semiconductor plates in the first stack. The second stack of semiconductor plates is moved to the position of the first stack of semiconductor plates aligned relative the second stack, is merged with the first stack of semiconductor plates by adjoining non-doped sides of matched first and second stacks of semiconductor plates. The device for transporting the stacks is a vacuum gripper module having gripping bars and a centring device.

EFFECT: high density of packing in the process tray and high efficiency of the diffusion process.

6 cl, 12 dwg

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