Selective amplifier. RU patent 2519558.
 Selective amplifier / 2519446Selective amplifier comprises a first (1) input transistor, the base of which is connected to the input (2) of the device, and the collector is connected to the output (3) of the device and is connected through a first (4) frequency-setting resistor to a first (5) power supply bus, a first (6) balancing capacitor connected via alternating current in parallel to the first (4) ) frequency-setting resistor, a second (7) input transistor, the collector of which is connected to a second (8) power supply bus, and the emitter is connected to the emitter of the first (1) input transistor, a second (9) frequency-setting resistor, the first lead of which is connected to the base of the second (7) input transistor, a second (10) balancing capacitor, the first lead of which is connected to the base of the second (7) input transistor. The second lead of the second (10) balancing capacitor is connected to the output (3) of the device, and the second lead of the second (9) frequency-setting resistor is connected to a first (11) auxiliary voltage source. |
 Hybrid differential amplifier / 2519373Hybrid differential amplifier comprises a first (1) input transistor, the base of which is connected to the non-inverting input (2) of the device, the collector is connected to a first (3) power supply bus, and the emitter is connected to emitter of a second (4) input transistor, wherein the base of the second (4) input transistor is connected to the inverting input (5) of the device, and the collector is connected to the output (6) of the device and is connected to a second (7) power supply bus through a load circuit (8). The first (1) input transistor used is a first (1) junction field-effect transistor, the gate of which corresponds to the base, the source to the emitter and the drain to the collector of a bipolar transistor, and the load circuit (8) comprises a second (9) junction field-effect transistor, the gate of which is connected to the second (7) power supply bus, the drain is connected to the collector of the second (4) input transistor, and the source is connected to second (7) power supply bus through an additional p-n junction (10), identical to the emitter-base junction of the second (4) input transistor. |
 Controlled selective amplifier / 2519035Controlled selective amplifier comprises an input signal source, two input transistors, two current-stabilising two-terminal elements, a power supply, a current mirror, two balancing capacitors, a resistor and a buffer amplifier. The input transistors used are field-effect transistors, whose sources correspond to the emitter, the drain to the collector and the gate to the base of a bipolar transistor. |
 Instrumentation amplifier / 2519032Instrumentation amplifier comprises: an input precision converter of (1) of a first (2) and a second (3) input voltage source connected to a common power supply bus (4), a first (9), a second (10) and a third (11) feedback resistor, an active adder (12) with an inverting (13) and a non-inverting (14) input. |
 Differential operational amplifier with passive parallel channel / 2517699Differential operational amplifier with a passive parallel channel comprises two input transistors, two output transistors which are junction gate field-effect transistors, a non-inverting stage and a controlled current source. |
 Low current consumption selective amplifier for sige technological processes / 2515544Invention relates to radio engineering. The device has first and second input transistors, emitters of which are connected through a first current-stabilising two-terminal element to a first power supply bus, an input voltage source connected to the base of the second input transistor, first and second frequency-setting resistors, a first balancing capacitor, wherein the collector of the first input transistor is connected to a second power supply bus. The collector of the second input transistor is connected to the second power supply bus through the first frequency-setting resistor and is connected through alternating current to the second power supply bus through series-connected first and second additional balancing capacitors, the common node of which is connected to the output of the device and the base of the first input transistor, wherein the base of the first input transistor is connected through alternating current to the common power supply bus through the second frequency-setting resistor. |
 Broadband cascade amplifier / 2513486Invention relates to radio engineering and communication and can be used as an analogue signal amplifier in analogue microcircuit structures of various purposes (e.g. broadband and selective HF and UHF amplifiers) The broadband cascade amplifier includes an input transistor (1) whose source is connected to a first (2) power supply bus, the gate is connected to an input voltage source (3) and the drain is connected to a first (4) output transistor and the inverting input of an auxiliary voltage amplifier (5), the output of which is connected to the gate of the first (4) output transistor, and the non-inverting input is connected to a reference voltage source (6), a load circuit (7), connected between the output of the device (8) and a second power supply bus (9). The drain of the first (4) output transistor is connected to the source of an additional transistor (10), the drain of which is connected to the output of the device (8) and the gate is connected to the input of an additional non-inverting current amplifier (11), the output of which is connected to the source of the first (4) output transistor or the source of the additional transistor (10), wherein an additional current-stabilising two-terminal element (12) is connected between the second (9) power supply bus and the input of the additional non-inverting current amplifier (11). |
 Selective amplifier / 2507676Selective amplifier has an input signal source, a voltage-to-current converter, an input transistor, an auxiliary voltage source, first and second frequency-setting resistors, first and second balancing capacitors, an additional current mirror and two current-stabilising two-terminal elements. The input signal source is connected to the input of the voltage-to-current converter. The base of the input transistor is connected to the auxiliary voltage source. The output of the voltage-to-current converter is connected to the collector of the input transistor and through the first frequency-setting resistor to the first power supply bus, and is also connected to the input of the additional current mirror. The common emitter output of the additional current mirror is connected to the second power supply bus through the first additional current-stabilising two-terminal element. |
 Selective amplifier / 2507675Selective amplifier has an input voltage source, an additional power supply, a voltage-to-current converter, output and additional transistors, two frequency setting resistors, two current-stabilising two-terminal elements, two balancing capacitors. The output transistor has a collector which is connected through a first frequency setting resistor to a first power supply bus. The output of the voltage-to-current converter is connected to the collector of the output transistor and through series-connected first and second balancing capacitors through alternating current to the common power supply bus. The common node of the first and second balancing capacitors is connected through the second frequency setting resistor to the output of the device and is connected to the emitter of the output transistor. The emitter of the output transistor is connected through the first current-stabilising two-terminal element to the second power supply bus. The base of the output transistor is connected to the emitter of the additional transistor and through the second current-stabilising two-terminal element to the first power supply bus. |
 Selective amplifier with paraphase output / 2504073In the selective amplifier, the emitter-base junctions of the first (3) and second (5) output transistors are connected in parallel to corresponding additional first (17) and second (18) forward-biased p-n junctions, wherein the first (7) output of the device is connected to the base of the second (4) input transistor through a second (13) capacitor, the base of the second (4) input transistor is connected to the common bus of power sources (19) through a first (20) additional resistor, and the base of the first (3) output transistor is connected to the base of the second (5) output transistor. |
 Differential amplifier / 2248085Proposed differential amplifier has first and second parallel-balanced stages 1, 2 whose inputs are connected in parallel with transistors 1.1, 1.2 of first stage 1 whose polarity of conductivity is other than that of transistors 2.1, 2.2 of second stage 2; emitters of transistors 1.1, 1.2 are coupled with base of first additional transistor 5 whose emitter is connected through first auxiliary resistor 6 to integrated emitters of transistors 2.1, 2.2; integrated emitters of transistors 2.1, 2.2 are connected to base of second additional transistor 7 whose emitter is connected through auxiliary resistor 8 to integrated emitters of transistors 1.1, 1.2. |
 Operational amplifier / 2255416Proposed operational amplifier designed for amplifying broadband signals, including pulsed ones, in analog interface structures of various functional applications has input stage 1 made in the form of differential amplifiers whose output current is unlimited at input voltage fluctuations up to several volts; p-n-p transistors 8, 9; and n-p-n transistors 10, 11. Emitters of transistors 8 through 11 are connected to respective antiphase current outputs of stage 1; collectors of transistors 9, 11 are integrated and coupled with correcting capacitor 16 and with output buffer amplifier 17. Current followers 19, 18 are introduced between collectors of transistors 8, 9 and collectors of transistors 10, 11. Use of micron technologies with layout standards of 1.5 to 2 μm provides for speed growth at level of 4000 - 6000 V/μs. |
 Differential amplifier / 2255417Proposed differential amplifier is designed for operation in miscellaneous analog integrated circuits (for instance, in high-speed operational amplifiers, analog signal multipliers, and the like), within a wide range of 50 to 60 mV up to units of Volts in nonlinear modes limited by final speed of differential amplifier. Speed of the latter rises due to dynamic growth of recharge currents through correcting capacitor at maximal rate of output voltage rise comparable with its speed in linear modes. Differential amplifier has input transistors 1, 3, reference current supplies 2, 4, auxiliary resistor 5 inserted between emitters of transistors 1, 3, and load circuit connected to collectors of transistors 1, 3. Newly introduced are transistors 8, 9 of different structure whose emitters are connected through additional resistors 10, 11 to emitters of transistors 3 and 1, respectively. Bases of transistors 8, 9 are connected to those of transistors 3, 1, respectively. |
 Differential amplifier / 2257002Proposed differential amplifier that can be used in miscellaneous microelectronic devices for amplifying and converting analog signals has input parallel-balance stage 1 incorporating first and second inputs 2, 3, as well as first and second antiphase current outputs 4, 5 and first output transistor 6 whose emitter is connected to second current output 5 of input parallel-balance stage 1, base of first output transistor 6 being coupled at ac end with first input 2 of input parallel-balance stage 1. |
 Broadband amplifier / 2277752Proposed broadband amplifier has differential stage built around transistors 3, 4 with main input 1 that functions as amplifier input and auxiliary input 2; emitters of these transistors are interconnected and collectors are coupled with load-circuit resistors 5, 6; it also has non-inverting current amplifier built around output transistor 7; differential-stage transistors 3, 4 have different polarities of conductivity and non-inverting current amplifier is provided in addition with input transistor 8 whose collector and base are integrated and connected to current supply 9 and to differential-stage auxiliary input 2, and its emitter is coupled with that of output transistor 7 having reverse polarity of conductivity whose collector is connected to differential-stage main input 1. |
 Differential bridge amplifier / 2277753Proposed amplifier (Fig. 3) that functions to amplify broadband and pulse signals in structure of various interfaces has input transistors 1 - 4 whose emitters are coupled with bases of respective output transistors 15 - 18, emitters of the latter being connected to those of respective input transistors 1 - 4 through additional resistors 24 - 26; inserted between emitters of output transistors 15 - 18 is resistor-diode matching sub-circuit 19. |
 Method for raising speed of operational amplifiers having directly coupled stages / 2277754Proposed method designed for application in broadband and pulse signal amplifiers of miscellaneous analog interface structures to enhance their speed by 5 to 10 times using micron technology with layout standards equal to or higher than 1.5 - 2 μm includes generation of additional charge-discharge current for correcting capacitor 3 (Fig. 1) proportional to difference 8 between current value of voltage across correcting capacitor and instant output voltage of auxiliary differential stage 6 identical to limited-output-current nonlinear input differential stage 1 connected to its inputs. |
 Differential amplifier with increased depletion of cophased signal / 2278466Differential amplifier contains input differential cascade on first and second input transistors, emitters of which are connected to output of first current mirror, first and second transistors of input current compensation channel, bases of which are connected to bases of first and second input transistors, while emitters are connected to outputs of static mode stabilization circuit. Collectors of first and second transistors of input current compensation channel are connected to input of first current mirror. |
 Operational amplifier / 2280318Proposed operational amplifier designed for amplifying broadband and pulse signals in miscellaneous analog interface structures and characterized in maximum output voltage growth to 10 000 - 160 000 V/μs using micron technologies has input differential stage 1 built around transistors 2, 3 with first reference current supply 4; input differential stage 5 built around transistors 6, 7 with second reference current supply 8, main inputs 9, 10 of differential stage 1 being connected to inputs 11, 12 of differential stage 5; intermediate push-pull stage built around intermediate amplifiers 13, 15 whose inverting inputs are connected to collectors of transistors 2, 6, respectively, and their outputs 17, 29 are coupled through ac circuit with input 18 of output stage 19 and also with correcting capacitor 21. Output 22 of ac circuit of output stage 19 is coupled through first and second resistors 25 and 26, respectively, with emitters of transistors 2, 3 and with those of transistors 6, 7. |
 Differential amplifier with nonlinear parallel channel / 2282303Differential amplifier (dwg.2) contains input differential cascade 1 on input transistors 2,3, emitters of which are connected to supporting current source 4 and through voltage repeater 6 - to bases of output transistors 11,12, emitters of which are connected to collectors of input transistors 2,3, bases of which are connected to bases of appropriate auxiliary transistors 9,10, emitters of which through provided additional transistors 18,19 are connected to current outputs 14,15 of output transistors 11,12, bases of transistors 18,19 are connected to collectors of transistors 2,3, while collectors of transistors 18,19 and 9,10 perform functions of appropriate current outputs (20,21 and 22,23) of parallel channel, providing amplification of large amplitudes of input signal. |
FIELD: radio engineering, communication.
SUBSTANCE: invention relates to radio engineering and communication and can be used in filtering radio signals, television and radar. The selective amplifier comprises an input voltage source (1), a voltage-to-current converter (2), an output transistor (3), a first power supply bus (4), a first frequency-setting resistor (5), a first (6) and a second (7) balancing capacitor, a second (8) and a third (9) frequency-setting resistor, an auxiliary voltage source (10), a negative power supply bus (11), a common power supply bus (12), an output of the device (13), a first additional current-stabilising two-terminal element (14), an additional transistor (15) an additional capacitor (16).
EFFECT: high Q-factor of the amplitude-frequency curve of the selective amplifier and voltage gain (K0) at quasi-resonance frequency f0, which enables to reduce overall power consumption in many cases.
2 cl, 5 dwg
The invention relates to the field of radio engineering and communication and can be used in filtering devices radio, television, radar, etc.
The task selection of high-frequency signals are now widely used integrated operational amplifiers with special elements RC-correction form of amplitude-frequency characteristic of resonant type [1, 2]. However, the classical construction of such election amplifiers (in-amps) is accompanied by significant energy losses, which go mainly to ensure static conditions of a sufficiently large number of minor transistors, forming operational amplifier [1, 2]. In this regard, a very urgent problem of construction of the electoral amplifiers three or four bipolar transistors, providing the allocation of narrow-spectrum signals with high quality factor (Q) resonance parameters (Q=2 to 10) with low power consumption.
Known schemes Yiwu, integrated into the architecture RC-filters based on bipolar transistors, ensuring the formation of amplitude-frequency characteristic gain voltage within the specified range of frequencies F=f-f n [3-20]. And their upper cutoff frequency f in sometimes is generated by the inertia of transistor circuits (capacity on a substrate), and the lower f n is determined corrective capacitor.
The closest prototype of the proposed device is the selective amplifier presented in the patent US 5.304.946, Fig. It contains the source voltage input 1, associated with the input of the inverter voltage-current" 2, the output transistor 3, collector which is connected to the first 4 bus power supply through the first 5 frequency control resistor, the first 6 and 7 second correction capacitors, 8 second and third 9 castorocauda resistors, source auxiliary voltage 10, negative bus power supply 11.
A significant disadvantage Yiwu prototype is that it does not provide high q
Q ≈ f 0 f in - f namplitude-frequency characteristics (AFC) and the gain on voltage To 0 >1 on the frequency of quasiresonant (f 0 ).
The main objective of the invention consists in increasing the quality factor of the frequency response Yiwu and gain voltage (0 ) on the frequency of quasiresonant f 0 . This allows in some cases to reduce the overall power consumption and implement high-quality electoral unit.
The problem is solved by the fact that in the election the amplifier figure 1 that contains the source voltage input 1, associated with the input of the inverter voltage-current" 2, the output transistor 3, collector which is connected to the first 4 bus power supply through the first 5 frequency control resistor, the first 6 and 7 second correction capacitors, 8 second and third 9 castorocauda resistors, source auxiliary voltage 10, negative bus power supply 11, there are new elements and connections of Converter "voltage-current" 2 is connected to the output transistor collector 3 and through consistently connected first 6 and 7 second correction capacitors connected to AC with a shared bus power supply 12, General site of the first 6 and 7 second consecutive correction capacitors connected with the emitter output transistor 3 through 8 second frequency control resistor, the emitter output transistor 3 is connected to the output device 13 and through the first 14 additional ecostability dvuhgolosyj connected with the second 11 bus power supply, the base output transistor 3 is connected with the emitter of the additional transistor 15, additional collector transistor 15 connected to the first 4 bus power supply through the third 9 frequency control resistor and through additional capacitor 16 connected with the emitter output transistor 3, with the base of the additional transistor 15 connected with a source of auxiliary voltage 10.
The amplifier circuit prototype is shown in figure 1. Figure 2 presents the scheme of the claimed device in accordance with paragraphs 1 and 2 of the claims.
Figure 3 shows the diagram of PS 2 in the environment of computer modeling Cadence on models SiGe integral PDP transistors.
Figure 4 shows the logarithmic amplitude-frequency (LACH) and phase (PFC) characteristics Yiwu 3 in wide frequency range from 1 kHz to 100 GHz at a current Ivar=I 17 =400 mA, Cvar=700 FF, Rvar=0.
Figure 5 presents LACK Yiwu 3 at different values of current Ivar=I 17 .
The electoral power, figure 2, contains the source voltage input 1, associated with the input of the inverter voltage-current" 2, the output transistor 3, collector which is connected to the first 4 bus power supply through the first 5 frequency control resistor, the first 6 and 7 second correction capacitors, 8 second and third 9 castorocauda resistors, source auxiliary voltage 10, negative bus power supply 11. The inverter voltage-current" 2 is connected to the output transistor collector 3 and through consistently connected first 6 and 7 second correction capacitors connected to AC with a shared bus power supply 12, General site of the first 6 and 7 second consecutive correction capacitors connected with the emitter output transistor 3 through 8 second frequency control resistor, the emitter output transistor 3 is connected to the output device 13 and through the first 14 additional ecostability dvuhgolosyj connected with the second 11 bus power supply, the base output transistor 3 is connected with the emitter of the additional transistor 15, additional collector transistor 15 connected to the first 4 bus power supply through the third 9 frequency control resistor and through additional capacitor 16 connected with the emitter output transistor 3, with the base of the additional transistor 15 connected with a source of auxiliary voltage 10.
Figure 2 in accordance with claim 2 between the emitter of the additional transistor 15 and 11 second bus power supply is on the second 17 additional ecostability dvuhgolosyj.
Consider the work of the proposed scheme 2.
The input source 1 (u of I ) through input transducer voltage-current 2 changes the current frequency driver dependent circuit formed by resistors 5, 8 and capacitors, 6, 7 in the main burden of the transistor 3. The presence of a capacitive divider consisting of a capacitor 6 and 7, provides the dependence of the current resistor 8 (i, R )corresponding to a frequency dependence of the resonance Yiwu. A resistor is 8 to the emitter of the transistor 3 provides an implementation of two circuits regenerative feedback effect that the collector current of the transistor 3 depends on the current i through the resistor R 8 and current collector 15. And must satisfy the condition that the frequency of quasiresonant f 0 resistance (separation) of additional capacitor 16 considerably less input resistance of the transistor 3. These feedback loops are real only at frequency f 0 and their action is aimed at increasing the quality factor Q, and gain Yiwu To 0 .
Complex transfer coefficient K(jf) as the ratio of the output voltage (output devices 13) to the input voltage u VH amplifier, figure 2, is determined by the ratio that can be obtained using the methods of analysis of electronic circuits:
K ( j f ) = u 13 u in x = To 0 j f f 0 Q f 0 2 - f 2 + j f f 0 Q , ( 1 )where f is the frequency of the signal;
f 0 is the frequency of quasiresonant;
Q - q AFC election amp;
0 - gain Yiwu on the frequency of quasiresonant f 0 .
Frequency quasiresonances diagram, figure 2, is determined from the following equation:
f 0 = 1 2 PI C 6 C 7 R 5 ( R 8 + h 11.3 ) , ( 2 )and implemented the quality factor Q, and gain (0 ):
Q = [ D 0 + C 6 C 7 R 5 R 8 + h 11.3 ( 1 - K i ) ] - 1 , ( 3 ) K 0 = S 2 Q C 6 C 7 h 11.3 R 8 + h 11.3 R 5 ( R 8 + h 11.3 ) , ( 4 )where S 2 - slope Converter "voltage-current" 2.
K i = α 3 ( 1 + α 15 h 11.3 h 11.15 ( 1 - α 3 ) ) , ( 5 )α i , h 11.i - static transfer coefficient emitter current and input impedance of the i-th of the transistor.
These ratios are true when R 9 >>h 11.3 and 16 >>1/2πf 0 h 11.3 . The main feature of the scheme is the possibility of implementing high-quality factor Q. So, at 7 =6 and performing additional parameter conditions:
R 8 + h 11.3 = R 5 1 2 ( 1 - K i ) ( 6 ) Q max = 1 2 2 x 1 1 - K i . ( 7 )Considering that the selection of the ratio between h and 11.3 h 11.15 (5) can be implemented relatively high value K i . In the scheme of Yiwu, figure 2, is implemented also required is the quality factor Q. So, even under the condition h 11.3 =h 11.15 i and II ≈0,99 we obtain that Q max ≈25.
In addition, the implementation of lower values of the quality factor Q, these features can be used to reduce its parametric sensitivity Q. For example, when performing a preliminary conditions
h 11.3 h 11.15 = 1 α 3 α 15 , ( 8 )which is ensured by the choice of required operation modes of transistors 3 and 15 (sources currents 14 and 17), you can define
Q = 1 2 R 5 R 8 + h 11.3 . ( 9 )While parametric sensitivity of q
S C 6 Q = S C 7 Q = 0 ; S R 5 Q = - S R 8 + h 11.3 Q = 1 2 ( 10 )decrease and do not depend on the implemented quality.
1. Design of Bipolar Differential OpAmps with Unity Gain Bandwidth of up to 23 GHz \ N.Prokopenko, A.Budyakov, K.Schmalz, C.Scheytt, P.Ostrovskyy \\ Proceeding of the 4-th European Conference on Circuits and Systems for Communications - ECCSC'08 / - Politehnica University, Bucharest, Romania: July 10-11, 2008. -pp.50-53.
2. Microwave SF-blocks of communication systems on the basis of fully differential operational amplifiers \ Prokopenko N., Budakov A.S., .Schmalz, .Scheytt \\ the problems of development of micro - and nanoelectronic systems - 2010. Collection of papers / edited edited by the academician of RAS Alemannische. - M: IPPM RAS, 2010. - S-586.
3. Ejkov YU.S. Reference circuitry amplifiers. - 2-e Izd., Rev.), Predicort, 2002. - P.21, Riv.
4. Volgin LI Synthesis and circuitry analog electronic means in the elemental basis of amplifiers and repeaters current / Liolyn, Aigarakov; under. General Ed. Liongina. - Ulyanovsk: UlSTU, 2005. - P.33, Fig.27.
5. Patent US 5.304.946, fig.22.
6. Patent US 7.113.043.
7. Patent US 7.598.810.
8. The patent application US 2005/0146389, fig.3.
9. The patent application US 2008/0231369, fig.2.
10. Patent US 7.110.742, fig.5.
11. Patent US 6.515.547, fig.4a.
12. Patent US 7.633.344, fig.7.
13. Patent US 7.847.636, fig.4a.
14. Patent US 7.786.807.
15. The patent application US 20070296501.
16. The patent application US 2008/0018403.
17. Patent US 3.351.865.
18. Patent US 7.737.790.
19. Patent US 4.151.483, fig.2.
20. Patent application JP 2003011396.
1. Selective amplifier that contains the source of the input voltage (1)associated with the input of the inverter voltage-current" (2), the output transistor (3), the collector which is connected to the first (4) bus power supply through the first (5) frequency control resistor, the first (6) and the second (7) correction capacitors, the second (8) and the third (9) castorocauda resistors, the source of the auxiliary voltage (10), negative bus power supply (11), wherein the inverter voltage-current" (2) is connected to the collector output transistor (3) and through consistently connected first (6) and the second (7) correction capacitors connected to AC with a shared bus power supply (12), General site the first (6) and II (7) consecutive corrective capacitors connected with the emitter output transistor (3) through second (8) frequency control resistor, the emitter output transistor (3) is connected to the output device (13) and through the first (14) additional ecostability dvuhgolosyj connected with a second (11) bus power supply, the base output transistor (3) are connected with the emitter of the additional transistor (15), additional collector transistor (15) is connected to the first (4) bus power supply through the third (9) frequency control resistor and through additional capacitor (16) is connected with the emitter output transistor (3), and the base of the additional transistor (15) connected with a source of auxiliary voltage (10).
2. The electoral power of claim 1, wherein between the emitter of the additional transistor (15) and the second (11) bus power supply is on the second (17) for more ecostability dvuhgolosyj.