Selective amplifier

FIELD: radio engineering, communication.

SUBSTANCE: selective amplifier comprises a first (1) input transistor, the base of which is connected to the input (2) of the device, and the collector is connected to the output (3) of the device and is connected through a first (4) frequency-setting resistor to a first (5) power supply bus, a first (6) balancing capacitor connected via alternating current in parallel to the first (4) ) frequency-setting resistor, a second (7) input transistor, the collector of which is connected to a second (8) power supply bus, and the emitter is connected to the emitter of the first (1) input transistor, a second (9) frequency-setting resistor, the first lead of which is connected to the base of the second (7) input transistor, a second (10) balancing capacitor, the first lead of which is connected to the base of the second (7) input transistor. The second lead of the second (10) balancing capacitor is connected to the output (3) of the device, and the second lead of the second (9) frequency-setting resistor is connected to a first (11) auxiliary voltage source.

EFFECT: reduced overall power consumption.

7 cl, 11 dwg

The present invention relates to the field of radio and communication and can be used in filtration devices radio, television, radar, etc.

In the tasks of separating high-frequency signals are now widely used integrated operational amplifiers with special items RC-correction form of the amplitude-frequency characteristic of the resonance type [1, 2]. However, the classical construction of such election amplifiers (in-amps) is accompanied by significant energy losses, which go primarily to ensure the static mode, a sufficiently large number of secondary transistors constituting the operational amplifier [1, 2]. In this regard, it is highly important task of building electoral amplifiers, providing a selection of narrow-spectrum signal with a sufficiently high quality factor (Q) of the resonance characteristics (Q=2÷10) with low power consumption.

Known schemes Yiwu based on bipolar transistors, which provide the formation of the amplitude-frequency characteristics of the gain of the voltage in a given range of frequencies Δf=f_B-f_n[3-17]. Moreover, the upper cutoff frequency f_insometimes is formed by the inertia of the transistors of the circuit (capacitance to the substrate and the bottom f_nis determined by correcting angelically capacitor.

The closest prototype of the proposed device is the selective amplifier, shown in the structure diagram in the patent application US No. 2008/0211580, fig.7A. It contains the first 1 input transistor, the base of which is connected to the input 2 of the device, and the collector is connected to the output 3 of the device and through the first 4 frequency control resistor connected with the first 5 bus power supply, the first 6 correction capacitor in AC parallel to the first 4 castorocauda resistor 7 second input transistor, the collector of which is connected with the second 8-bus power supply, and an emitter connected to the emitter of the first 1 of the input transistor, the second 9 frequency control resistor, a first output which is connected to the base 7 of the input of the second transistor, the second 10 correction capacitor, the first conclusion which connected to the base 7 of the input of the second transistor.

A significant disadvantage of the known PS-prototype is that it does not provide high quality$$Q\approx \frac{f_0}{f_{\mathrm{in}}-f_n}$$amplitude-frequency characteristics (AFC) and high gain voltage To₀>1 at the frequency of quasiresonance (f₀).

The main objective of th is alleged invention is to increase the quality factor of the frequency response Yiwu and its conversion gain voltage ( ₀on the frequency of quasiresonance f₀. This allows in some cases to reduce the total energy consumption and implement high-quality polling the device.

The problem is solved in that in the election amplifier 1, 1 containing the first input transistor, the base of which is connected to the input 2 of the device, and the collector is connected to the output 3 of the device and through the first 4 frequency control resistor connected with the first 5 bus power supply, the first 6 correction capacitor in AC parallel to the first 4 castorocauda resistor 7 second input transistor, the collector of which is connected with the second 8-bus power supply, and an emitter connected to the emitter of the first 1 of the input transistor, the second 9 frequency control resistor, a first output which is connected to the base of the second input 7 transistor 10 second correction capacitor, a first output which is connected to the base 7 second input transistor, there are new elements and connections of the second output 10 second correction capacitor connected to the output 3 of the device, and the second output of the second 9 frequency control resistor connected to the first 11 source of auxiliary voltage.

The amplifier circuit of the prototype shown in the drawing figure 1. In the drawing figure 2 presents the diagram of the inventive device in the CE is accordance with claim 1 of the claims.

In the drawing figure 3 presents a diagram of the inventive Yiwu in accordance with claim 2, and in the drawing of figure 4 in accordance with section 3 of the claims.

In the drawing figure 5 presents a diagram of the inventive Yiwu in accordance with paragraph 4 of the claims, and the drawing 6 - pursuant to section 5 of the claims.

In the drawing 7 presents a diagram of the inventive Yiwu in accordance with article 6 of the claims and the drawing Fig in accordance with claim 7 claims.

In the drawing figure 9 presents the scheme Yiwu 6 in the elemental basis of the process ABMC (Minsk) in the environment of computer simulation PSpice.

In the drawing figure 10 shows the logarithmic amplitude-frequency (LACH) and phase-frequency (PFC) features Yiwu Fig.9 in the frequency range from 10 kHz to 10 GHz with Rvar=Cam, Cvar=1 FF, Rvar2=610 Ohms, Cvar3=20 pF, Cvar2=9 pF.

In the drawing of Fig. 11 shows LACK Yiwu Fig.9 when the resistance value Rvar2, changing in the range from 540 Ohms to 600 Ohms.

Selective amplifier 2 1 contains the first input transistor, the base of which is connected to the input 2 of the device, and the collector is connected to the output 3 of the device and through the first 4 frequency control resistor connected with the first 5 bus power supply, the first 6 correction capacitor in AC parallel to the first 4 castorocauda resistor, the second 7 input TRANS the Stour, the collector of which is connected with the second 8-bus power supply, and an emitter connected to the emitter of the first 1 of the input transistor, the second 9 frequency control resistor, a first output which is connected to the base 7 of the input of the second transistor, the second 10 correction capacitor, a first output which is connected to the base 7 of the input of the second transistor. The second conclusion 10 second correction capacitor connected to the output 3 of the device, and the second output of the second 9 frequency control resistor connected to the first 11 source of auxiliary voltage.

In the drawing figure 3, in accordance with claim 2, the first 1 of the input transistor is used field-effect transistor with a control p-n junction, the gate of which is equivalent to the base of transistor 1, the source of its emitter, drain - manifold, and as the first 11 source auxiliary voltage potential of the second bus 8 power source, and the source voltage input 12 connected between the input 2 of the device 8 and the second bus of the power source.

In the drawing figure 4, in accordance with section 3 of the claims, the input 2 of the device associated with the second 8-bus power source 13 through the third frequency control resistor, the input voltage 14 is connected to input 2 of the device 15 through the third correction capacitor, and the first is th 1 input transistor is applied to a field transistor with a control p-n junction, a shutter which is equivalent to the base of transistor 1, the source - its emitter, drain - manifold, and as the first 11 source auxiliary voltage potential of the second bus 8 power source.

In the drawing figure 5, in accordance with paragraph 4 of the claims, as the source of auxiliary voltage 11 is the capacity of a shared bus power supply 16, the input voltage 17 is included between the input 2 of the device and the total bus power supply 16, and 7 as the second input transistor is used field-effect transistor with a control p-n junction, the gate of which is equivalent to the base of transistor 7, the source - to-emitter and drain - to the collector of the transistor 7.

In the drawing 6, in accordance with paragraph 5 of the claims, as the source of auxiliary voltage 11 is used, the potential of the common bus 16 power supply, input 2 devices connected to the shared bus power supply 16 through 18 fourth frequency control resistor, the input voltage 19 is connected on the alternating current to the input 2 of the device 20 via the fourth frequency control capacitor and connected to the shared bus power supply 16, and 7 as the second input transistor is used field-effect transistor with a control p-n junction, the gate of which is equivalent to the base of transistor 7, history of the Sabbath. - the emitter and the collector - drain of the transistor 7.

In the drawing 7, in accordance with article 6 of the claims, the source of the input voltage 21 is connected to the input 2 of the device through the fifth decoupling capacitor 22, as an additional source of voltage 11 is the capacity of the second bus 8 power source, and the input 2 of the device is connected to the base and collector of the first 23 additional transistor through the first 24 additional resistor, the emitter of the first 23 additional transistor connected to the emitter of the second 25 additional transistor, the collector of the second 25 additional transistor associated with the second 8-bus power source, between the base of the transistor 25 and the second 8-bus power supply is on the second 26 additional resistor, and the collector of the first 23 additional transistor connected to the first 5 bus power source 27 through the third additional resistor.

In the drawing Fig, in accordance with paragraph 7 of the claims, the source of the field-effect transistor with a control p-n junction, which is used as a 7 second input transistor connected auxiliary dvukhpolosnykh 28, for example, p-n junction.

Consider the operation of the circuit Fig 3.

The source of the input voltage u_I(12) changes the drain current of the first 1 of the input transistor. The nature of the runoff load is the transistor, formed by the resistors 4 and 9, and the capacitors 6 and 10 converts this current into the output signal PS. The presence of the capacitive divider formed by the capacitors 6 and 10, provides the functional dependence of this signal corresponding to frequency characteristics of the selective amplifier.

The complex transmission coefficient PS 3 as the ratio of the output voltage (output 3) to the input voltage u_I(1) is determined by a formula, which can be obtained by using methods of analysis of electronic circuits:

$$K\left(jf\right)=\frac{u_3}{u_{\mathrm{in}x}}=K_0\frac{jf\frac{f_0}{Q}}{f_0^2-f^2+jf\frac{f_0}{Q}},\left(1\right)$$

where f is the frequency of the input signal;

f₀frequency quasiresonance electoral amp;

Q - q AFC electoral amp;

To₀the gain of the DUT at a frequency of quasiresonance f₀.

And:

$\[ f_0=\frac{1}{2\pi \sqrt{C_6{C}_{10}{R}_4{R}_9}},\left(2\right) \]$

where C₆With₁₀, R₄, R₉the parameters of the corresponding schema elements 6, 10, 4 and 9;

Q Yiwu is determined by the formula

$$Q^{-1}=D_0+\sqrt{\frac{C_{10}}{C_6}}\sqrt{\frac{R_9}{R_4}}\left[1-\frac{R_4}{h_{11.7}+S_1^{-1}}\right],\left(3\right)$$

where h_11.7- input resistance of the transistor 7 in the circuit with a common base;

$$D_0=(\sqrt{\frac{C_6}{C_{10}}}+\sqrt{\frac{C_{10}}{C_6}})\sqrt{\frac{R_4}{R_9}}$$ - equivalent attenuation passive frequency driver-dependent chain;

S₁the steepness of the transistor 1;

By choosing the parameters of the elements included in the formula (3), we can ensure that Q>>1.

The formula for the gain K₀in the complex transmission coefficient (1) is

$$K_0=-QS\sqrt{R_4{R}_9}\sqrt{\frac{C_{10}}{C_6}},\left(4\right)$$

where $$S\approx \frac{1}{\left(h_{11.7}+S_1^{-1}\right)}$$ .

From the relation (3) implies the possibility of parametric optimization scheme Yiwu during the implementation of the required quality. Indeed,

$$Q^{-1}=\frac{m(k^2+1)}{k}+\frac{1-R_{4}S}{mk},\left(5\right)$$

where $$k=\sqrt{\frac{C_6}{C_{10}}}$$ ; $$m=\sqrt{\frac{R_4}{R_9}}$$ .

This parametric sensitivity

$$S_{C_6}^Q=-S_{C_{10}}^Q=\frac{1}{2}\left[\frac{m\left(k^2-1\right)}{k{D}_p}-\frac{S{R}_4}{mk}\right],\left(6\right)$$

$$S_S^Q=-\frac{QS{R}_4}{mk}\left(8\right)$$

may be optimized by one criterion - the total sensitivity, the mean sensitivity, etc. So, while minimizing the RMS sensitivity

$$k_{opt}=\mathrm{1,6}{\left(S{R}_4\right)}_{opt}=\mathrm{2,5,}\left(9\right)$$

the ratio between the resistive elements is determined from the condition (5) practical implementation Q.

Under conditions With₁₀=C₆=And $$h_{11.7}+S_1^{-1}=R_4$$ parametric sensitivity of key parameters Yiwu have the following form:

$$S_{C_{10}}^{f_0}=S_{C_6}^{f_0}=S_{R_4}^{f_0}=S_{R_9}^{f_0}=-\frac{1}{2},\left(10\right)$$

$$S_{C_{10}}^Q=S_{C_6}^Q=\mathrm{0,}{S}_{C_{10}}^{K_0}=-S_{C_6}^{K_0}=\frac{1}{2},\left(11\right)$$

$$S_{R_9}^Q=-S_{R_4}^Q=\frac{1}{2},S_{R_9}^{K_0}=S_{R_4}^{K_0}=\frac{1}{2}.\left(12\right)$$

This characterizes diagram of the inventive Yiwu in the class of low-sensitivity units of the second order. In this case, the₀=Q.

Represented in the drawings, figure 10 - 11 simulation results of the proposed Yiwu confirm these properties of the proposed scheme.

Feature diagrams figure 3 (P2 claims) - the minimum possible current consumption from the power source, and also work with a unipolar power supply.

Scheme 4 (PZ claims) has the additional quality of a unipolar power - high attenuation in the low frequency range.

Scheme 5 (A4 claims) has bipolar power with minimum consumption of current in the elemental basis ABMC (NGOs "Integral", Minsk).

In scheme 6 (P5 claims) provided by an RC circuit, providing a more profound weakening of the input signal in the low frequency range.

Special features of the scheme 7 (P6 claims) - single-supply operation and the possibility of implementing a p-n-p and n-p-n transistors of the analog base matrix crystal ABMC (NGOs "Integral", Minsk).

In the scheme Fig (A7 claims) provided further decrease compatible due to the transfer field-effect transistor (technology ABMC) microregion.

Thus, the proposed circuit solutions Yiwu characterized by higher values of the gain K₀the frequency of quasiresonance f₀and elevated values of quality factor Q, which characterizes its selective properties with low power consumption.

BIBLIOGRAPHIC LIST

1. Design of Bipolar Differential OpAmps with Unity Gain Bandwidth up to 23 GHz N.Prokopenko, A.Budyakov, K.Schmalz, C.Scheytt, P.Ostrovskyy Proceeding of the 4-th European Conference on Circuits and Systems for Communications - ECCSC'08 / Politehnica University, Bucharest, Romania: July 10-11, 2008. - pp.50-53

2. SHF SF-blocks of communication systems on the basis of the fully differential operational amplifiers Prokopenko N. N., Budakov A.S., .Schmalz, .Scheytt problems of development of perspective micro - and nanoelectronic systems - 2010. Collected works / under the General editorship of academician Alemannische. - M.: IPPM RAS, 2010. - S-586

3. Patent application US 2008/0012640, fig.4

4. Patent US 7.705.677, fig.2

5. Patent US 6.396.346

6. Patent US 5.767.542, fig.2, fig.3

7. Patent US 6.690.231, fig.6

8. Patent US 6.624.699

9. Patent US 6.198.348, fig.2

10. Patent EP 1.480.333, fi.1, fig.17

11. Patent JP 2010-28311

12. Patent WO 03094344, fig.3

13. Patent application US 2003/0206062, fig.3, fig.4

14. Patent application US 2006/0125561, fig.1

15. Patent WO 2009/029284

16. Patent application US 2007/0146070, fig.1

17. Patent application US 2010/0013557.

1. Selective amplifier containing the first (1) of the input transistor, the base of which is connected to the input (2) of the device, and the collector is connected to the output (3) of the device and through the first (4) frequency control resistor connected with the first (5) bus power supply, first (6) correcting capacitor in AC parallel to the first (4) castorocauda resistor, the second (7) of the input transistor, the collector of which is connected with the second (8) bus power supply, and an emitter connected to the emitter of the first (1) of the input transistor, the second (9) frequency control resistor, a first output which is connected to the base of the second (7) of the input transistor, the second (10) correction capacitor, a first output which is connected to the base of the second (7) of the input transistor, characterized in that thethe second output of the second (10) correction capacitor connected to the output (3) of the device, and the second output of the second (9) frequency control resistor connected to the first (11) the source of auxiliary voltage.

2. Selective amplifier according to claim 1, characterized in that the first (1) of the input transistor used the camping field-effect transistor with a control p-n junction, a shutter which is equivalent to the base of the transistor (1), the source of its emitter, drain - manifold, and as the first (11) of the source of auxiliary voltage potential of the second (8) bus power source, and the source of the input voltage (12) connected between the input (2) device and the second (8) bus power source.

3. Selective amplifier according to claim 1, characterized in that the inlet (2) device associated with the second (8) bus power supply through the third (13) frequency control resistor, the input voltage (14) is connected to the input (2) of the device through the third (15) adjustment capacitor, and the first (1) of the input transistor is applied to a field transistor with a control p-n junction, the gate of which is equivalent to the base of the transistor (1), the source of its emitter, drain - manifold, and as the first (11) of the source of auxiliary voltage is used the second potential (8) bus power source.

4. Selective amplifier according to claim 1, characterized in that as the source of auxiliary voltage (11) is the capacity of a shared bus power supply (16), input voltage (17) connected between the input (2) device and a shared bus power supply (16)and second (7) of the input transistor is used field-effect transistor with a control p-n junction, the gate to the showing is equivalent to the base of the transistor (7), the source - to-emitter and drain - to the collector of the transistor (7).

5. Selective amplifier according to claim 1, characterized in that as the source of auxiliary voltage (11) uses the potential of the common bus (16) power supplies, input (2) of the device connected to the shared bus power supply (16) through fourth (18) frequency control resistor, the input voltage (19) is connected on the alternating current to the input (2) of the device through the fourth (20) frequency control capacitor and connected to the shared bus power supply (16)and second (7) of the input transistor is used field-effect transistor with a control p-n transition, the gate of which is equivalent to the base of the transistor (7), the source - emitter and collector - drain of the transistor (7).

6. Selective amplifier according to claim 1, characterized in that the source of the input voltage (21) is connected to the input (2) devices over a fifth (22) decoupling capacitor, as an additional source of voltage (11) uses the potential of the second (8) bus power supply, and input (2) device is connected to the base and collector of the first (23) of the additional transistor through the first (24) additional resistor, the emitter of the first (23) of the additional transistor is connected to the emitter of the second (25) additional transistor, the collector of the second (25) additional transistor is connected with the second (8) bus power supply, between the base of this transistor (25) and second (8) bus power supply is on the second (26) additional resistor, and the collector of the first (23) of the additional transistor is connected to the first (5) bus power supply through the third (27) additional resistor.

7. Selective amplifier according to claim 5, characterized in that the source of the field-effect transistor with a control p-n junction, which is used as a second (7) of the input transistor connected auxiliary dvukhpolosnykh (28), for example, p-n junction.