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Hybrid differential amplifier. RU patent 2519373.

Hybrid differential amplifier. RU patent 2519373.
IPC classes for russian patent Hybrid differential amplifier. RU patent 2519373. (RU 2519373):

H03F3/45 - Differential amplifiers
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FIELD: radio engineering, communication.

SUBSTANCE: hybrid differential amplifier comprises a first (1) input transistor, the base of which is connected to the non-inverting input (2) of the device, the collector is connected to a first (3) power supply bus, and the emitter is connected to emitter of a second (4) input transistor, wherein the base of the second (4) input transistor is connected to the inverting input (5) of the device, and the collector is connected to the output (6) of the device and is connected to a second (7) power supply bus through a load circuit (8). The first (1) input transistor used is a first (1) junction field-effect transistor, the gate of which corresponds to the base, the source to the emitter and the drain to the collector of a bipolar transistor, and the load circuit (8) comprises a second (9) junction field-effect transistor, the gate of which is connected to the second (7) power supply bus, the drain is connected to the collector of the second (4) input transistor, and the source is connected to second (7) power supply bus through an additional p-n junction (10), identical to the emitter-base junction of the second (4) input transistor.

EFFECT: reducing the systematic component of the zero bias voltage and temperature and radiation drift thereof.

2 cl, 11 dwg

 

The invention relates to the field of radio engineering and communication and can be used as a device strengthening of analog signals in the structure of analog chips of different functional purposes (for example, in photoreception devices, solving amplifiers with low input conductivity etc).

In modern electronic equipment are used differential amplifiers (DU) with significant different parameters.

A special place is occupied by the complement cascade differential amplifiers [1-11]. These do have a very simple structure and are characterized by the lowest power consumption.

The present invention relates to this class of devices.

The closest to the nature of the proposed technical solution is a classical scheme of complementary differential cascade figure 1 presented in U.S. patent №6.781.459 fig. 4, which is also present in a large number of other patents and books, for example, [1-11]. It contains the first 1 input transistor, the base of which is connected to not inverting input 2 devices, the collector is connected with the first 3 bus power supply, and the emitter is connected to the emitter of the second 4 input transistor, and the base of the second 4 input transistor is connected to the inverting input 5 device, and its manifold connected to the output of 6 device and is connected with the second 7 bus power supply via load circuit 8.

A significant disadvantage Doo figure 1 is that it has increased the importance of the systematic component of the voltage offset (U cm =1,4% to 1,5 B), due to the asymmetry of its architecture.

The main objective of the proposed invention consists in reducing the absolute value U SEE , as well as its temperature and radiation drift.

The task is achieved that complementary differential amplifier figure 1, containing the first 1 input transistor, the base of which is connected to not inverting input 2 devices, the collector is connected with the first 3 bus power supply and the emitter connected to the emitter of the second 4 input transistor, and the base of the second 4 input transistor is connected to the inverting input 5 device, and its manifold connected to the output of 6 device and is connected with the second 7 bus power supply via load circuit 8, there are new elements and communications, as the first 1 input transistor is used first 1 field-effect transistor with managing the p-n junction, the gate of which corresponds to the base, the source of the emitter, and the river - reservoir bipolar transistor, and the load circuit 8 9 contains the second field-effect transistor with the Manager of p-n the transition, the gate of which is connected with the second 7 bus power supply, runoff associated with header second 4 input transistor, and the source is associated with the second 7 bus power supply through additional p-n junction 10, identical emitter-base transition of the second 4 input transistor.

The amplifier circuit prototype is shown on the drawing figure 1. On the drawing figure 2 presents the scheme of the claimed device in accordance with paragraph 1 of the claims.

Scheme DU corresponding to claim 2, shown on the drawing figure 3.

On the drawing figure 4 shows a diagram of the operational amplifier on the basis of the proposed control, which included additional buffer amplifier transistor 13 and the source of bias potentials 14, and entered 100% negative feedback from the exit 15 on the entrance 5.

Scheme of du in the environment of the PSpice models transistors analog base matrix crystal corresponding to the drawing figure 4, is shown in the drawing figure 5, and the dependence of the gain on the voltage of the frequency of this (broken) shelter is presented on the drawing 6. Offset voltage of zero OS 5 corresponds U cm =-8,2 mV.

On the drawing Fig.7 shows the dependence of the gain on the voltage of the frequency OS 5 at 100% negative feedback.

The scheme Fig corresponds to the drawing figure 5, however, the output buffer amplifier is designed in the form of a composite transistor Q7, Q8, and voltage offset this OS corresponds U cm =-3,1 mV.

On the drawing figure 9 presents the frequency dependence of gain voltage OS Fig without feedback.

On the drawing figure 10 shows the dependence of the gain on the voltage of the frequency OS peg at 100% negative feedback.

On the drawing 11 shows a diagram of OU Fig, which by reducing resistor R1 guaranteed low offset voltage of zero (U cm =-22,2 MACs).

Hybrid differential amplifier figure 2 contains the first 1 input transistor, the base of which is connected to not inverting input 2 devices, the collector is connected with the first 3 bus power supply, and the emitter connected to the emitter of the second 4 input transistor, and the base of the second 4 input transistor is connected to the inverting input 5 device, and its manifold connected to the output of 6 device and is connected with the second 7 bus power supply via load circuit 8. As the first 1 input transistor is used first 1 field-effect transistor with managing the p-n junction, the gate of which corresponds to the base, the source of the emitter, and the river - reservoir bipolar transistor, and the load circuit 8 9 contains the second field-effect transistor with managing the p-n junction, the gate of which is connected with the second 7 bus power supply, runoff associated with header second 4 input transistor, and the source is associated with the second 7 bus power supply through additional p-n junction 10, identical emitter-base transition of the second 4 input transistor.

On the drawing figure 3, in accordance with claim 2, in the chain of source 1 first and second 9 field transistors p-transition included respectively the first 11 and the second 12 additional resistors.

On the drawing figure 4 the scheme includes additional buffer amplifier transistor 13 and the source of the bias voltage 14, the output of which is connected to the output device 15.

Consider the factors that determine systematic component voltage offset U see in the diagram of figure 2, i.e. depending on the circuitry of the shelter.

Current source and drain of the FET 9 (I =I =I 0 ) depends on the steepness of its statesattorney characteristics when U I =U AB ≈0,7V. When identical to the p-n transitions of the second 4 input transistor and extra p-n junction 10 and identical field-effect transistors 1 and 9 emitter current of the transistor 4 and current source of the transistor 1 will be equal to the value of I is 0 . Therefore, the voltage offset in question do according to his definition [12]

U with m = U E. b .4 - U C and .1 ≈ 0, (1) as U A B = U E. b .10 = U C and .9 , U A B = U E. b .10 = U E. b .4 = U A

Romanova

B

Romanova

, (2) U zi .1 = U C and .9 .

Thus, in this scheme provides low offset voltage of zero.

The differential gain voltage claimed Doo 2:

K y = u in s x .6 u in x .1 - u in x .2 = u in s x .6 u in x .1.2 ≈ R n . E. to in r E. 4 + S 1 - 1 where r E. 4 ≈ ' t I 0

- resistance-emitter junction transistor 4;

S 1 - slope statesattorney features field-effect transistor 1;

Phi t =26 mV - temperature potential;

R naqu - equivalent load resistance control.

And R n . E. to in ≈ ( ' t I 0 + 1 S 9 ) / h 12.9 3 , (4)

where S 9 - slope statesattorney features FET 9;

h 12.9 3 = 10 - 2 ASP 10 - 4

- coefficient of internal feedback field-effect transistor 9, depending on its design and manufacturing technology.

When the temperature changes (and radiation) changes the drain current of the transistor 9. However, exactly the same (in connection with the symmetry of the emitter circuit) a change in the current source of the transistor 1 and collector transistor current 4. In the U see schemes varies slightly.

Thus, the declared device decreases the systematic component of the voltage offset U see .

Thus, the proposed device has significant advantages in comparison with the prototype largest static errors strengthening of DC signals and can be used as the IP modules modern system-on-chip, sold, for example, technology analog base matrix crystals ABMC.

The bibliographic list

1. US patent # 4.415.868 fig. 3

2. The patent of the FRG №2928841 fig. 3

3. The Japan patent JP 54-34589, CL 98(5) a014 select the active portion

4. The Japan patent JP 154-10221, CL H03F 3/45

5. The Japan patent JP 54-102949, CL 98(5) A21

6. US patent # 4.366.442 fig. 2

7. US patent # 6.426.678

8. Patent application US 2007/0152753 fig. 5

9. US patent # 6.531.920, fig.4

10. US patent # 4.262.261

11. Ejkov Y.A Reference circuitry amplifiers. - 2-e Izd., Rev.): IE the Radiosoftware, 2002. - 272 S. - RIS (p.235).

12. Operational amplifiers with direct connection cascades / V.I. Anisimov, Kapitonov M.V., Prokopenko N., Sokolov, Y.M. - L.: "Energy", 1979. - 148 S.

 

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