IPC classes for russian patent Method to produce interconnections in high-density electronic modules. RU patent 2504046. (RU 2504046):
Another patents in same IPC classes:
Powerful hybrid integral circuit of shf range / 2498455
Powerful hybrid integral circuit of SHF range contains electric- and heat-conducting base with protrusion, dielectric substrate with metallisation pattern on its face and ground metallisation pattern at the other side divided at least into two parts and each part is installed at the heat-conducting base at the opposite sides from protrusion, back-to-back to protrusion; at least one chip of active semiconductor is installed and fixed at the protrusion; height of the protrusion is so that exposed surfaces of chips and dielectric substrate are placed in the same plane; the protrusion of electric- and heat-conducting base is made as metalised diamond insert placed and fixed at the base depression, at that selected depression depth h ensures minimum temperature difference Δt (°C) for the chip of active semiconductor and the other side of electric- and heat-conducting base: where λ is thermal conductivity of diamond (coefficient of heat conductivity W/(m×degree)), Q is power of the chip of active semiconductor (W), polynominal coefficients are A1=-17.44331; A2=31.36052; A3=-22.21548; A4=19.01102; A5=-995.19516; A6=-4.10308×103; A7=-1.56933×103; A8=4.81737×106; A9=-1.6359×109 corresponding to depression depth h in the range from 0.001 up to 0.8 mm and thickness of depression bottom is equal to 0.2 mm or more. |
Power semiconductor module having layered side walls / 2492548
In a power semiconductor module (1), which includes at least two electrically interconnected power semiconductor units (19, 20), having controlled power semiconductors, a module housing (2, 3, 13) in which the power semiconductor units (19, 20) are located and which has electrically insulating side walls (13), and at least one connection bus (9, 10, 11, 12, 21) extended through the side wall (13) and connected to at least one of the power semiconductor units (19, 20), insulating side walls (13) are constructed in form of a stack of insulating and partial elements (14, 15, 16) constructed as a single piece. The partial elements (14, 15, 16) adjoin each other through contact regions. |
3d electronic device / 2488913
3D electronic device is designed in the form of a cylindrical or pyramidal frustrum or a figure composed of their combinations immediately connected to each other; the microboards have external contacts at their butt-ends, the said contacts electrically connected to the microboards components with the 3D electronic modules are equipped with external contact fields positioned on their butt-ends or faces. The external switching board may be designed in the form of a flexible printed board with contact fields for connection to any surface of the 3D modules; the external contact fields may be made of flat zones (coated with a current-conductive material and connected to the external switching board, such zones positioned on the external butt-ends of each 3D module) or console-type metal or polymer metallised contacts (protruding outside the 3D electronic modules dimensions and electrically connected to the external switching board). Considered are cases when the external switching board design enables universalisation of 3D electronic modules of arbitrary spatial configuration. |
High-voltage semiconducting switching device / 2421840
High-voltage semiconducting switching device consists of selected by leakage current series connected unpackaged semiconducting elements that are centred and isolated by side surface with the help of fluoroplastic rings, housing, clamping system and current-carrying electrodes. The housing is made of isolating material with high mechanical and electrical strength. At both housing ends there are rigidly fixed metal flanges that are included in clamping system with threaded holes. At bolting of switching device cover to housing flanges with the help of clamping system elements located inside the cover there created is necessary compressive force of semiconducting devices and its transmission through the housing to semiconducting devices. Note that at the same time there performed is pressurisation of inner volume of switching unit housing by O-rings located between flanges and current-carrying electrodes. |
System of power supply, including interchangeable cells / 2404482
System of power cells includes structure providing for multiple seats of power cells location. System also includes at least one regenerative power cell and at least one non-regenerative power cell. Seats of cells arrangement and power cells are maintained in size and are positioned so that each seat of cell arrangement may, on the basis of interchangeability, hold either regenerative power cell or non-regenerative power cell. |
Imaging device, communication device and cartridge / 2400863
Imaging device and communication device include: a data transmission unit, several signal transmission lines, a control unit, a switching unit, a data receiving unit and several signal reception lines, capable of transmitting a data signal from memory of several cartridges to the said data receiving unit. The data signal is transmitted to the said data receiving unit through a signal reception line connected to cartridge memory which can be connected to the said data transmission unit in response to connection of the said data transmission unit with one the said several signal transmission lines through the said switching units. The cartridge used in the imaging device contains: a first contact and a second contact, which can be connected to the communication device through two communication lines, a memory chip which can be connected to the first contact and the second contact. |
Power semi-conductor converter for diesel locomotive with three-phase ac supply from synchronous diesel-generator with system of vertical air cooling / 2342260
Device contains carcass with detachable front and back shields, left and right side walls with sockets for connection of inlet control circuits. Along air flow direction, groups of power semi-conductor thyristor modular units are installed, assembled into six three-phase bridges with creation of six channels for electric energy conversion, which are connected to internal buses of three-phase AC and buses of every channel rectified current. Units for control of voltage supply to thyristor modular units of six conversion channels are connected to elements of current protection in every channel. Converter is equipped with chamber for location of mentioned control units and second electric insulating chamber for location of power thyristor units. |
3d electronic module / 2335821
3D electronic module incorporating standard encased components and/or PCBs with caseless active and passive components, an outer heat sink system and outer output terminals. Note that encased components and the aforesaid PCBs feature double-side outputs arrangement and are located between the printed switching PCBs arranged in parallel and furnished with plated holes. The connecting PCB abuts, with its end face surfaces, on the aforesaid plated holes, the said connecting PCB having an electrical and mechanical connection to the switching PCBs. The switching PCB and the connecting PCB accommodates the 3D connectors, the latter being interconnected to form a cubic and/or tubular 3D cell made up of a set of 3D cells forming a plug-and-socket connection. The active element heat sink system represents a tubular 3D cell furnished with coaxially-arranged heat-sink lines wherein the active elements are in thermal contact with the pipe walls. |
No-potential power module of enhanced insulating voltage / 2274928
Proposed power module that can be built around diodes, thyristors, transistors, and other semiconductor devices has base, leads, case, and cermet board that mounts semiconductor component; arranged in tandem between semiconductor component and base are capacitive voltage divider assembled of minimum two cermet boards interconnected to organize electric circuit set up of minimum two series-connected capacitors and temperature compensator connected through one contacting surface to bottom cermet board and through other one, to module base; dimensions of temperature compensator effective surface follow those of cermet board metal plating contacting this temperature compensator; thickness of the latter should equal at least insulating gap length between edge of bottom board and that of its metal-plated surface. |
Method for assembly of high-power integrated circuit / 2267187
The circuit leads are soldered by the group method and their main part is positioned on the same side on which the crystal is positioned, the preset remoteness of the free ends of the leads from the board is provided, in the process of soldering the variation of the distance between the components being soldered is controlled, on one installation designed for soldering out of inner conductors with a definite cross-sectional area, and/or on one installation designed for soldering of boards, and/or on one installation for soldering of crystals during one production cycle effected is respectively the soldering out of the inner conductors and/or soldering of boards, and/or soldering of crystals of various circuits, the possibility of simultaneous delivery of semifinished items different in type and/or class of the circuits is provided. |
Method for assembly of high-power integrated circuit / 2267187
The circuit leads are soldered by the group method and their main part is positioned on the same side on which the crystal is positioned, the preset remoteness of the free ends of the leads from the board is provided, in the process of soldering the variation of the distance between the components being soldered is controlled, on one installation designed for soldering out of inner conductors with a definite cross-sectional area, and/or on one installation designed for soldering of boards, and/or on one installation for soldering of crystals during one production cycle effected is respectively the soldering out of the inner conductors and/or soldering of boards, and/or soldering of crystals of various circuits, the possibility of simultaneous delivery of semifinished items different in type and/or class of the circuits is provided. |
No-potential power module of enhanced insulating voltage / 2274928
Proposed power module that can be built around diodes, thyristors, transistors, and other semiconductor devices has base, leads, case, and cermet board that mounts semiconductor component; arranged in tandem between semiconductor component and base are capacitive voltage divider assembled of minimum two cermet boards interconnected to organize electric circuit set up of minimum two series-connected capacitors and temperature compensator connected through one contacting surface to bottom cermet board and through other one, to module base; dimensions of temperature compensator effective surface follow those of cermet board metal plating contacting this temperature compensator; thickness of the latter should equal at least insulating gap length between edge of bottom board and that of its metal-plated surface. |
3d electronic module / 2335821
3D electronic module incorporating standard encased components and/or PCBs with caseless active and passive components, an outer heat sink system and outer output terminals. Note that encased components and the aforesaid PCBs feature double-side outputs arrangement and are located between the printed switching PCBs arranged in parallel and furnished with plated holes. The connecting PCB abuts, with its end face surfaces, on the aforesaid plated holes, the said connecting PCB having an electrical and mechanical connection to the switching PCBs. The switching PCB and the connecting PCB accommodates the 3D connectors, the latter being interconnected to form a cubic and/or tubular 3D cell made up of a set of 3D cells forming a plug-and-socket connection. The active element heat sink system represents a tubular 3D cell furnished with coaxially-arranged heat-sink lines wherein the active elements are in thermal contact with the pipe walls. |
Power semi-conductor converter for diesel locomotive with three-phase ac supply from synchronous diesel-generator with system of vertical air cooling / 2342260
Device contains carcass with detachable front and back shields, left and right side walls with sockets for connection of inlet control circuits. Along air flow direction, groups of power semi-conductor thyristor modular units are installed, assembled into six three-phase bridges with creation of six channels for electric energy conversion, which are connected to internal buses of three-phase AC and buses of every channel rectified current. Units for control of voltage supply to thyristor modular units of six conversion channels are connected to elements of current protection in every channel. Converter is equipped with chamber for location of mentioned control units and second electric insulating chamber for location of power thyristor units. |
Imaging device, communication device and cartridge / 2400863
Imaging device and communication device include: a data transmission unit, several signal transmission lines, a control unit, a switching unit, a data receiving unit and several signal reception lines, capable of transmitting a data signal from memory of several cartridges to the said data receiving unit. The data signal is transmitted to the said data receiving unit through a signal reception line connected to cartridge memory which can be connected to the said data transmission unit in response to connection of the said data transmission unit with one the said several signal transmission lines through the said switching units. The cartridge used in the imaging device contains: a first contact and a second contact, which can be connected to the communication device through two communication lines, a memory chip which can be connected to the first contact and the second contact. |
System of power supply, including interchangeable cells / 2404482
System of power cells includes structure providing for multiple seats of power cells location. System also includes at least one regenerative power cell and at least one non-regenerative power cell. Seats of cells arrangement and power cells are maintained in size and are positioned so that each seat of cell arrangement may, on the basis of interchangeability, hold either regenerative power cell or non-regenerative power cell. |
High-voltage semiconducting switching device / 2421840
High-voltage semiconducting switching device consists of selected by leakage current series connected unpackaged semiconducting elements that are centred and isolated by side surface with the help of fluoroplastic rings, housing, clamping system and current-carrying electrodes. The housing is made of isolating material with high mechanical and electrical strength. At both housing ends there are rigidly fixed metal flanges that are included in clamping system with threaded holes. At bolting of switching device cover to housing flanges with the help of clamping system elements located inside the cover there created is necessary compressive force of semiconducting devices and its transmission through the housing to semiconducting devices. Note that at the same time there performed is pressurisation of inner volume of switching unit housing by O-rings located between flanges and current-carrying electrodes. |
3d electronic device / 2488913
3D electronic device is designed in the form of a cylindrical or pyramidal frustrum or a figure composed of their combinations immediately connected to each other; the microboards have external contacts at their butt-ends, the said contacts electrically connected to the microboards components with the 3D electronic modules are equipped with external contact fields positioned on their butt-ends or faces. The external switching board may be designed in the form of a flexible printed board with contact fields for connection to any surface of the 3D modules; the external contact fields may be made of flat zones (coated with a current-conductive material and connected to the external switching board, such zones positioned on the external butt-ends of each 3D module) or console-type metal or polymer metallised contacts (protruding outside the 3D electronic modules dimensions and electrically connected to the external switching board). Considered are cases when the external switching board design enables universalisation of 3D electronic modules of arbitrary spatial configuration. |
Power semiconductor module having layered side walls / 2492548
In a power semiconductor module (1), which includes at least two electrically interconnected power semiconductor units (19, 20), having controlled power semiconductors, a module housing (2, 3, 13) in which the power semiconductor units (19, 20) are located and which has electrically insulating side walls (13), and at least one connection bus (9, 10, 11, 12, 21) extended through the side wall (13) and connected to at least one of the power semiconductor units (19, 20), insulating side walls (13) are constructed in form of a stack of insulating and partial elements (14, 15, 16) constructed as a single piece. The partial elements (14, 15, 16) adjoin each other through contact regions. |
Powerful hybrid integral circuit of shf range / 2498455
Powerful hybrid integral circuit of SHF range contains electric- and heat-conducting base with protrusion, dielectric substrate with metallisation pattern on its face and ground metallisation pattern at the other side divided at least into two parts and each part is installed at the heat-conducting base at the opposite sides from protrusion, back-to-back to protrusion; at least one chip of active semiconductor is installed and fixed at the protrusion; height of the protrusion is so that exposed surfaces of chips and dielectric substrate are placed in the same plane; the protrusion of electric- and heat-conducting base is made as metalised diamond insert placed and fixed at the base depression, at that selected depression depth h ensures minimum temperature difference Δt (°C) for the chip of active semiconductor and the other side of electric- and heat-conducting base: where λ is thermal conductivity of diamond (coefficient of heat conductivity W/(m×degree)), Q is power of the chip of active semiconductor (W), polynominal coefficients are A1=-17.44331; A2=31.36052; A3=-22.21548; A4=19.01102; A5=-995.19516; A6=-4.10308×103; A7=-1.56933×103; A8=4.81737×106; A9=-1.6359×109 corresponding to depression depth h in the range from 0.001 up to 0.8 mm and thickness of depression bottom is equal to 0.2 mm or more. |
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FIELD: instrument making.
SUBSTANCE: in the initial stock they open windows in a layer of polymer, they fill these windows with a conducting material, they open windows in the conducting layer, they fill these windows with a polymer, after filling of the windows in the conducting layer with the polymer they separate the stock into separate parts, lay them in series into a packet and connect layers of the packet with the bearing substrate.
EFFECT: expanded arsenal of methods to reduce cost of manufacturing and accelerate the process of creation of high-density electronic modules.
29 dwg
The invention relates to the electronics microelectronics.
An important stage in the production of high-density electronic modules is the formation of interconnects. The technical result of the invention is an expansion of the ways to reduce the cost of manufacturing of high-density electronic modules. In this case, this result is achieved at the stage of forming interconnects.
Consider analogs.
According to the Russian patent 2133522 offers a way of manufacturing and control of electronic components, that is, «that many crystals have in the press-form, focusing on the pads of crystals and basic elements of the mold, isolate all the unprotected surface of the crystals, except pads. The specificity of the method consists in that the location of the press-form crystals fixed among themselves with the formation of a group of media, providing the location of the front surfaces of crystals in the same plane with one surface of the media group, while on the plane put together all of conductors required to and control, as well as the external connector of the carrier. Simultaneously with crystals in the press-form is put group metal frame, which is fixed simultaneously with crystals. Group media can be established to the flexible circuit Board, which is connected with a rigid Foundation. The technical result of the invention is cheaper processes and finishing control, reduction of technological process of assemblage and control of electronic components.»
There is a method of manufacturing of three-dimensional multicomponent electron module on the Russian patent 2193260:
«The essence of the invention: open frame components are placed in the Windows group ceramic pieces with a focus on a circuit, and with the observance of a single plane of the location of the active zones components and front surface of the workpiece. Components are fixed in such a situation, and electrically isolate unprotected zones components on their face. Further put mainly by the method of vacuum spraying conductors on the front and back side of the workpiece and components, while forming the connector and wires required for and control. Fit the blade cut out from a group procurement and collect the package, connecting them to each other capillary cable. To one of the edges of the package to external outputs and seal made module. The technical result is to obtain three-dimensional modules with high packing density, with effective heat sink and low cost».
These methods did not differ versatility. The universal way of reducing the cost of manufacturing of high-density electronic modules. It consists in the following.
Known stages of obtaining interconnects in multilayer printed circuit boards, which can be referred to high-density electronic modules (V.A. Ilyin Technology for manufacture of PCB. HP, 1984) and which can be summarized as follows (the example is given in figure 1-22):
1. Initial billet: polymer film 2 coated with a layer of conductive material (copper) 1, hereinafter called foil-clad material (figure 1), divided into parts (figure 2; 3 - layer 1, 4 - layer 2, 5 - layer 3, 6 - layer 4).
2. Open the window in the polymer film layer 1 (figure 3).
3. Fill the window in the polymer film layer 1 conductive material (figure 4).
4. Paste layer 1 on the bearing substrate 7 (figure 5).
5. Open the window in the conductive material layer 1 (Fig.6).
6. Fill the window in the conductive material layer 1 polymer (Fig.7).
7. Paste layer 2 foil-material (Fig.8).
8. Reveal transient window conductive layer 2 (Fig.9).
9. Fill conductive material transitional window conductive layer 2 (figure 10).
10. Open the window in the conductive layer 2 (figure 11).
11. Fill the window in the conductive layer 2 polymer (fig.12).
12. Paste layer 3 foil material (fig.13).
13. Reveal transient window conductive layer 3 (figure 14).
14. Fill conductive material transitional window conductive layer 3 (fig.15).
15. Open the window in the conductive layer 3 (fig.16).
16. Fill the window in the conductive layer 3 polymer (fig.17).
17. Paste layer 4 foil material (fig.18).
18. Reveal transient window conductive layer 4 (fig.19).
19. Fill conductive material transitional window conductive layer 4 (fig.20).
20. Open the window in the conductive layer 4 (fig.21).
21. Fill the window in the conductive layer 4 polymer (fig.22).
This method is the prototype.
To expedite the process of creating high-density electronic modules and reduce costs divide it into separate parts after filling out the Windows in the conductive layer polymer. Then they consistently placed in a bag and spliced layers of package together with the bearing substrate. Then the formation of high density interconnects in electronic modules is carried out sequentially as follows (the example is given on fig.23-29):
1. In the original procurement, representing a polymer film 2 coated with a layer of conductive material (copper) 1 (fig.23), opened the window in a layer of polymer (fig.24).
2. Fill the window in a layer of polymer conductive material (fig.25).
3. Open the window in the conductive layer (fig.26).
4. Fill the window in the conductive layer polymer (fig.27).
5. Divide it into separate parts (fig.28).
6. Consistently stack part of the procurement package and spliced layers package with carrier substrate 7 (fig.29).
Figure 1-22 illustrate the prototype method, and fig.23-29 - the proposed method.
Comparison of the prototype and the proposed method shows that the invention can speed up the process of obtaining high density interconnects in electronic modules and make it cheaper.
The method of obtaining high density interconnects in electronic modules, which consists in the fact that in the original procurement reveal the window in a layer of polymer, fill this window conductive material, opened the window in the conductive layer fill the window polymer is characterized in that after filling out the Windows in the conductive layer polymer divide it into separate parts, consistently placed them in a bag and spliced layers of package together with the bearing substrate.
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