Method of multi-element ion implantation (versions) |
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IPC classes for russian patent Method of multi-element ion implantation (versions) (RU 2285069):
      
 Method for producing perfect epitaxial silicon layers with buried n+- layers / 2265912
Proposed method for producing perfect ion-doped silicon structures or substrates for epitaxial growth includes oxidation and photolithography operations to localize n+ regions, ion implantation of antimony, and diffused redistribution of dope in oxidizing medium, removal of oxide, and epitaxial growth. Antimony is implanted under combined conditions at energy E = 60 - 100 keV, dose rate D = 400 - 2000 μKl/cm2 (Φ = 2.5·1015 - 1.25·1016 cm-2) and scanning current density Jsc = 6 15 μA/cm2 ensuring ion-stimulated crystallization of surface amorphous layer. Further redistribution of implanted dope along with formation of microrelief on structure surface results in temperature T = 1493 K (1220 °C) within time t = 120 - 900 minutes, first within 120 - 120 minutes in dry oxygen medium, then in gas mixture of dry nitrogen incorporating 5 - 15% of dry oxygen.
 Method for ion-beam doping of chips / 2258977
Proposed method for ion-beam doping of chips that can be used for organizing regions of medium energy ions of 10 - 500 keV in chips of regions of different conductivity and its polarity includes implantation of accelerated ions of doping impurity in chip and annealing; prior to annealing surface resistance is measured on irradiated side of chip, the latter is subjected to ultrasonic treated with chemically inactive liquid at frequency of 20 - 40 kHz, and this treatment is ceased as soon as resistance is brought to steady state value, whereupon annealing is made not later than in 24 hours after treatment.
 The method of ion doping of solids / 2193080
The invention relates to the field of doping of solids by ion irradiation photobrush elements and can be used for ionic modification of structure and physico-mechanical properties of metals, semiconductors and superconductors
 The method of formation of silicon nanostructures, lattice silicon quantum wires and devices / 2173003
The invention relates to a method of formation of quasi-one-dimensional solid silicon nanostructures
 Installation for the formation of nanostructures on the surface of semiconductor wafers ion beams / 2164718
The invention relates to electronic and vacuum technology
 Method of forming solid-state nanostructures / 2141699
The invention relates to methods of forming solid-state nanostructures, in particular semiconductor and optical, and can be used when creating the new generation devices in microelectronics, and optical instrumentation
 The way heteronomy processing of silicon substrates / 2134467
The invention relates to the field of semiconductor devices and can be used for fabrication of discrete devices and integrated circuits for cleaning (gettering) of the original substrates and structures based on single-crystal silicon from the background impurities and defects
 The method of doping silicon chalcogenide / 2069414
The invention relates to the production technology of semiconductor devices, in particular to the process of doping silicon chalcogenide, and can be used in the manufacture of temperature sensors, photodetectors
Method for alloying metals in films / 2276206
Method comprises steps of spraying and simultaneously displacing in space metal and alloying element to nano-dispersed state in low-pressure plasma and their co-deposition in the form of sub-layers at alternating repeating crossing of plasma fluxes; depositing each layer in the form of "island" type coating with particle size of metal and(or) alloying element less than critical size when particle is in liquid state at co-deposition. Invention provides significantly lowered temperature (about 100°C) of alloying - formation of solid solution.
 Boule of the iii-v groups element nitride used for production of substrates and the method of its manufacture and application / 2272090
The invention is pertaining to production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules and may be used in semiconductor engineering. Substance of the invention: the boule of III-V groups chemical element nitride may be manufactured by growing of the material of III-V groups the chemical element nitride on the corresponding crystal seed out of the same material of nitride of the chemical element of III-V of group by epitaxy from the vapor phase at the speed of the growth exceeding 20 micrometers per hour. The boule has the quality suitable for manufacture of microelectronic devices, its diameter makes more than 1 centimeter, the length exceeds 1 millimeter, defects density on the boule upper surface is less than 107 defects·cm-2.
The method of ion doping of solids / 2193080
The invention relates to the field of doping of solids by ion irradiation photobrush elements and can be used for ionic modification of structure and physico-mechanical properties of metals, semiconductors and superconductors
Boule of the iii-v groups element nitride used for production of substrates and the method of its manufacture and application / 2272090
The invention is pertaining to production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules and may be used in semiconductor engineering. Substance of the invention: the boule of III-V groups chemical element nitride may be manufactured by growing of the material of III-V groups the chemical element nitride on the corresponding crystal seed out of the same material of nitride of the chemical element of III-V of group by epitaxy from the vapor phase at the speed of the growth exceeding 20 micrometers per hour. The boule has the quality suitable for manufacture of microelectronic devices, its diameter makes more than 1 centimeter, the length exceeds 1 millimeter, defects density on the boule upper surface is less than 107 defects·cm-2.
Method for alloying metals in films / 2276206
Method comprises steps of spraying and simultaneously displacing in space metal and alloying element to nano-dispersed state in low-pressure plasma and their co-deposition in the form of sub-layers at alternating repeating crossing of plasma fluxes; depositing each layer in the form of "island" type coating with particle size of metal and(or) alloying element less than critical size when particle is in liquid state at co-deposition. Invention provides significantly lowered temperature (about 100°C) of alloying - formation of solid solution.
 Method of multi-element ion implantation (versions) / 2285069
Two versions are proposed for realization of this method for forming on surface of object to be subjected to radiation multi-element beam at difference of ratio of ion mass to charge not exceeding 10% for each ion. According to first version, multi-element plasma of high-charge ions is formed in chamber of one source which is connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions is extracted from plasma with the aid of electric field formed by constant accelerating voltage and this beam is directed to magnetic separator which separates ion components of phase-forming atoms at difference in ratio of ion mass to its charge not exceeding 10% scanning over surface of object to be subjected to ration by this beam. According to second version, multi-element plasma of high-charge ions is formed in chamber of source connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions at respective energies is extracted with the aid of electric field formed by modulator of accelerating voltage amplitude; this field changes in amplitude periodically and successively. Ions accelerated periodically and successively for selected energies are directed to object to be subjected to radiation though magnetic separator.
 Identification mark for marking valuables and method of making said mark / 2373307
Invention relates to apparatus and methods of marking valuables, mainly precious stones, particularly cut diamonds, and can be used for subsequent identification of data of the valuables. Mark 1 is made in form of an image, which is optically visualised in diffraction-reflection light, made on the polished surface 3 of the valuable object 2. The structure of the image is formed by a modified area of the surface layer of the object 2 with optical properties in the said area, which is functionally the image of mark 1, altered from the initial properties. The modified area is made in form of microlines 8, spatially formed according to type of the reflection grating, which is functionally an apparatus for increasing contrast of visual perception of the image of marker 1 in at least one of the colour hues of the spectrum of incident radiation. The structure of microlines of the modified area includes at least one impurity additive, which is selected from a group which includes noble metals or boron, ion-implanted into atomic lattices of the initial material of the object without breaking interatomic bonds of these lattices and, therefore, without changing quality of the polished surface of the object, but with change of the complex refractive index of this material. According to the method of making mark 1, before modification, a technological layer (TL) of material, which is removed after modification, is deposited on surface 3. A structure is formed in the technological layer according to type of the line grating. The corresponding area of the surface layer is modified by exposing this area to an ion beam through a mask with an image of mark 1 and the spatial structure formed in the technological layer, that way creating process conditions implantation of modifier ions into the modified area of the surface layer of the material of object 2 without breaking bonds in the atomic lattices of this material and, therefore, without changing initial quality of polishing the surface layer, but with change of its initial optical properties. The modifier used is impurity additives, selected from a group which includes noble metals or boron, ions of which alter the complex refractive index of the modified layer.
Method for ion-beam doping of chips / 2258977
Proposed method for ion-beam doping of chips that can be used for organizing regions of medium energy ions of 10 - 500 keV in chips of regions of different conductivity and its polarity includes implantation of accelerated ions of doping impurity in chip and annealing; prior to annealing surface resistance is measured on irradiated side of chip, the latter is subjected to ultrasonic treated with chemically inactive liquid at frequency of 20 - 40 kHz, and this treatment is ceased as soon as resistance is brought to steady state value, whereupon annealing is made not later than in 24 hours after treatment.
Method for producing perfect epitaxial silicon layers with buried n+- layers / 2265912
Proposed method for producing perfect ion-doped silicon structures or substrates for epitaxial growth includes oxidation and photolithography operations to localize n+ regions, ion implantation of antimony, and diffused redistribution of dope in oxidizing medium, removal of oxide, and epitaxial growth. Antimony is implanted under combined conditions at energy E = 60 - 100 keV, dose rate D = 400 - 2000 μKl/cm2 (Φ = 2.5·1015 - 1.25·1016 cm-2) and scanning current density Jsc = 6 15 μA/cm2 ensuring ion-stimulated crystallization of surface amorphous layer. Further redistribution of implanted dope along with formation of microrelief on structure surface results in temperature T = 1493 K (1220 °C) within time t = 120 - 900 minutes, first within 120 - 120 minutes in dry oxygen medium, then in gas mixture of dry nitrogen incorporating 5 - 15% of dry oxygen.
Method of multi-element ion implantation (versions) / 2285069
Two versions are proposed for realization of this method for forming on surface of object to be subjected to radiation multi-element beam at difference of ratio of ion mass to charge not exceeding 10% for each ion. According to first version, multi-element plasma of high-charge ions is formed in chamber of one source which is connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions is extracted from plasma with the aid of electric field formed by constant accelerating voltage and this beam is directed to magnetic separator which separates ion components of phase-forming atoms at difference in ratio of ion mass to its charge not exceeding 10% scanning over surface of object to be subjected to ration by this beam. According to second version, multi-element plasma of high-charge ions is formed in chamber of source connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions at respective energies is extracted with the aid of electric field formed by modulator of accelerating voltage amplitude; this field changes in amplitude periodically and successively. Ions accelerated periodically and successively for selected energies are directed to object to be subjected to radiation though magnetic separator.
Method of synthesis of superconducting inter-metallic joint in films / 2285743
Proposed method is used in forming multi-level superconducting scheme inside film non-superconducting coat. Proposed method includes joint ion-plasma spraying of targets of initial metals at deposition of film non-superconducting coat from solid solution of metals on substrate. Film coat thus obtained is acted on by flow of ionized particles relative to one another at rate and energy sufficient for initiating reaction of inter-metallization and dissipation at preset depth from surface of coat for forming multi-level superconducting scheme inside film non-superconducting coat. Change in depth of levels and connection of sections of levels of different depth is effected through change of energy of flow and depth of dissipation from larger magnitudes to lesser ones.
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FIELD: doping of solid bodies by radiation of ion beam from phase-forming atoms; structural and phase modification of solid bodies for enhancing their physico-mechanical, corrosion-resistant and other important properties. SUBSTANCE: two versions are proposed for realization of this method for forming on surface of object to be subjected to radiation multi-element beam at difference of ratio of ion mass to charge not exceeding 10% for each ion. According to first version, multi-element plasma of high-charge ions is formed in chamber of one source which is connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions is extracted from plasma with the aid of electric field formed by constant accelerating voltage and this beam is directed to magnetic separator which separates ion components of phase-forming atoms at difference in ratio of ion mass to its charge not exceeding 10% scanning over surface of object to be subjected to ration by this beam. According to second version, multi-element plasma of high-charge ions is formed in chamber of source connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions at respective energies is extracted with the aid of electric field formed by modulator of accelerating voltage amplitude; this field changes in amplitude periodically and successively. Ions accelerated periodically and successively for selected energies are directed to object to be subjected to radiation though magnetic separator. EFFECT: enhanced efficiency of ion doping; reduction of time required for radiation. 3 cl, 3 dwg
The invention relates to the field of doping of solids by receiving the ion beam from photobrush atoms and can be used for structural-phase modification of solids, for example to improve their physico-mechanical, corrosion, and other practically important properties. Known wide application of ion beams for doping of solids of various chemically active atoms to form in irradiated materials specified size and density of precipitates of secondary phases that determine their physical, chemical and mechanical properties [1]. A distinctive feature of the ion doping is the possibility of doping of any object (without limitation) atoms, including not having a solubility in the material of the object. This fact has contributed to a broad application of the principles of ion modification of the structure in order to control the chemical, physical and mechanical properties of various materials. So, for example, with the aim of strengthening materials using ion-induced formation of both the accumulation of radiation defects and fine precipitates of secondary phases. In the latter case it is possible to get the greatest effect on the magnitude of the hardening and thermal stability, which determines its successful applications to the tion in the solution of many practical problems. Usually used for this purpose irradiation of the specified object ions such chemical element that have the ability to form with the atoms of the irradiated object of a chemical compound. The greatest effect in changing the physical-mechanical properties of solids can occur when they are exposed to two or three ions of different chemical elements, which at certain temperatures is received or after the radiation firing, interacting with each other, form new complex chemical composition (multi-component) phase precipitates in the matrix of the irradiated object [2]. At the same time to implement the formation of multicomponent phase use the sequential irradiation of the object corresponding ions. For example, for formation of a phase type BN (boron nitride) object sequentially irradiated with ions of boron and nitrogen [3, 4]. Of course, for forming, for example, boron carbonitride, you need sequential irradiation by ions of carbon, nitrogen and boron. Established to ensure that conditions of formation of phases (including multi-component) of the alloying atoms necessary to their concentration exceeded the solubility limit in the lattice of irradiated material. In this regard, the fluence of the particles should be at least 1017cm-2that is usually implemented in practice. In this regard and requires adequate time for the irradiation of each of the components necessary ions. Ie, for example, for synthesizing three-phase requires three times the irradiation object ions of each component in strictly defined energies for ions of each components. This is essential precise matching of energies for each of the bombarding ions to form a similar spatial profiles of the ion doping in the irradiated sample volume. This circumstance requires the possibility for a controlled change of the energy of accelerated ions in the implanter. Otherwise, as implemented in [5], when ions are used with non-correlated energies, the spatial profiles of doping, for example with double exposure, very different. In this case there are physical and technical problems with both the selection of doses, and with the uncertainty of the role of the field at the end of the mileage, alloy only one type of ions on the characteristics of the final product. In [6] described a method of ion implantation, in which form the plasma of multiply charged ions in a single source, and then extracted from him the ion beam, which then allocate the necessary ions with strictly the same ratio of mass to charge using high-resolution magnetic separator, then sending them to the irradiated object. However, in most the e scientific and practical cases of synthesis in irradiated object multiple phases require simultaneous multielement implantation in various isotopes or ions with different values relationships mass to their charge. This circumstance often occurs in practice, formation of multi-element beam of multicharged ions, when it is impossible to select from ions with strictly the same ratio of their mass to their charge. The use of the method described above in [6] does not allow to implement the ability to form multi-element beam of ions with different (at least at 10%) values of the relations of their mass to their charge. For example, when synthesizing an extremely solid phase boron carbonitride (BNC) cannot implement the terms of the receipt of the mixture of multiply charged ions11InN+,12WithN+and14NN+(where N+ is the charge value from 2 to 7) ions with the same values of the relations of their mass to their charge. Moreover, these difficulties arise when multiple ion implantation derived from isotopic elements, such as11Inn+,16About3,5,6+,19Fn+,57Fen+and so, when it is impossible to obtain the whole or of the same magnitude relations of their mass to their charge. The main disadvantages of methods used ion doping: - the need for a great time at successive irradiation of the object corresponding ions to achieve their concentrations in nominal (not leading to excessive radiation heating is bluemage object) flows ions the inability of the extracted multi-element plasma to allocate and dispatch on the irradiated object ions with different (at least up to 10%) values of the relations of their mass to their charge. The invention solves the problem of increasing the efficiency of formation of the multi-element beam and create the conditions for the simultaneous irradiation of the object-element beam from photobrush atoms with different (at least not more than 10%) values of the relations of their mass to their charge when necessary condition of the formation of similar energy profiles for ion doping depth of the irradiated sample. The technical result of the invention is achieved by the method of multi-element ion implantation, in which the irradiation object ionic components photobrush atoms, in which the irradiation in the same source form multi-element plasma of multiply charged ions, extracted from her multi-element beam with the electric field generated as a constant accelerating voltage, and send it in a magnetic separator with a relative resolution of not more than 10%, which forms a multi-element beam containing ionic components photobrush atoms with different relative to each other by the values of the ratio of the mass of the ions to their dawn is no more than 10% and scan the formed multi-element beam on the surface the irradiated object. The technical result of the invention is also achieved by a method of multi-element ion implantation, in which the irradiation object ionic components photobrush atoms, in which the irradiation in the same source form multi-element plasma of multiply charged ions are then extracted from it multielement beam of these ions through periodically and sequentially changing the amplitude of the accelerating voltage, the change of the amplitude which is inversely proportional to the ratio of the mass of the ions to their charge for a given photobrush atoms, after which the beam is directed in a magnetic separator, which emit ions with equal relationship of momentum to the charge and transported them to the irradiated object. Summary of the invention according to the first method consists in the fact that the volume of the chamber one source connected to at least two stand-alone dispensers photobrush atoms form of these multi-element plasma high RES (up to "naked" nuclei) ions. Using the electric field generated as a constant accelerating voltage, extracted from plasma multielement beam of multicharged ions and direct it to the magnetic massacrator. Magnetic separator with a relative resolution of not more than 10% allocates Jonny the components photobrush atoms with differing by no more than 10% relative to each other values the values of the ion mass to their charge. Because magnetic separator with low-resolution shapes the beams of each of the selected ions are spatially shifted relative to each other in the focal plane of a magnetic separator to a value determined by the value of its resolution, it is necessary to use the system spatial scan formed multielement beam bombarded on the surface of the object. The scanning beam is a necessary condition to ensure the formation on the irradiated surface of the sample uniform flow of the multi-element ions, and therefore, uniform and simultaneous entry in the irradiated object required alloying elements. Summary of the invention according to the second method consists in the fact that the volume of the source chamber connected to at least two stand-alone dispensers photobrush atoms form of these multi-element plasma HFSE (down to the bare nucleus) ions. Using a periodically varying amplitude of the electric field generated by the modulator amplitude rectangular pulse of accelerating voltage, sequentially extracted with multielement beam of multicharged ions with the corresponding energies. The amplitude of the accelerating voltage for each type of ions from the multi-element beam selects the I of the conditions of formation for each of the ions of equal size relationship of momentum to the charge to ensure the conditions of their passing through a magnetic separator to the object. The duration of the periodic activities of the magnitude of the accelerating voltage for each of the ions (duty cycle) is selected as the specified relative concentration of implanted ions in the irradiated object. Ions are periodically and sequentially accelerated to a selected energies are directed through a magnetic separator to the irradiated object. Figure 1 shows a schematic diagram of an installation for forming a multi-element ion beam. The installation consists of an ion source 1, containers for working substances 2, 3, 4, line transport of multicomponent ion beam 5, the magnetic separator 6, the scanning device 7, the irradiated object 8, the accelerating voltage rectifier 9, the modulator accelerating voltage 10. The working substance in the required proportions of the containers 2, 3 and 4 are served in the chamber of the source of multiply charged ions 1. In the chamber formed multi-element plasma of multiply charged ions. The beam of multicharged ions extracted from the ion source with energy, which is determined by the accelerating voltage rectifier 9. In accordance with the first method, after the passage of the transportation line 5 and the magnetic separator 6 of the multi-element beam ions are allocated with the values of the relations of their mass to their charge, differ no more than 10%. While the focus of each of the ions spaces the NGOs shifted in the focal plane of the separator, perpendicular to the beam. In this connection it is necessary to provide conditions for scanning the selected magnetic separator multielement beam using the scanning device 7 along the surface of the irradiated object 8. In the second method, when using the modulator values of accelerating voltage 10, each ion acquires the appropriate accelerating voltage of energy that result in the same value of the ratio of the pulse ion charge. While the focus of each passed through a magnetic separator beam spatially combined in the focal plane of the separator. Therefore, for simultaneous "occurrence" ion beam in the irradiated object eliminates the need to use their scan. Ions with different ratio of their mass to their charge (Z) for example,11In4+(AIn/ZIn=2,75),12With4+(AWith/ZWith=3),14N5+(AN/ZN=2,8) can be simultaneously directed to the object at a constant accelerating voltage (U0and the use of a magnetic separator with a relative resolution below 10%. In terms of scanning of multi-element beam on the irradiated surface of the object provided the conditions for the formation therein similar spatial profiles of the ion doping (Figure 2). the e same ions using the second method can simultaneously be transported to the irradiated object with the following values periodically and sequentially changing the accelerating voltage. Taking, for example, ion12With4+the accelerating voltage UWith=20 kV, then for11In4+UB=UWithxAWith/ZWithxZB/AB=21,8 kV, and14N5+UN=UWithxAWith/ZWithxZN/AN=21,4 kW, which ensures equality for these ions the values of momentum to their charge and their subsequent passage through a magnetic separator. When synthesis in irradiated object, for example, phase type CNB, with equal flows of ions of C, N and duration of periodic and sequential steps during the whole time of exposure for each of the accelerating voltages are the same. Figure 3 shows for the case of multi-element radiation calculated profiles of doping. Sources of information 1. Hessel, Iruga. Ion implantation. Moscow: The science. 1983. 2. Application of ion Beam to Materials. (Eds. Carter G., J.S. Colligon, Grant W.A.) Inst. Of Phys. Cont. Ser.28. 1976. 3. Angles CENTURIES, A.K. Kuleshov, Keniger A., hammer K., Rauschenbach B. Anotherdate iron in mono and dual implantation of nitrogen and boron//Surface. 6. 1997. (98-101). 4. V.V.Uglov, D.P.Rusalcky, V.V.Khodasevich and at. al. Modified layer formation by means of high current density nitrogen and implantation.// Surface and Coatings Technology 103-104 (1998) 317-322. 5. S.Shukuri et. al. United States Patent No. 4.716.127. Dec.29, 1987. 6. Simonov V., Kornilov L.A., Shashelev AV, shockin EV KN. Equipment innocently. Moscow: Radio and communications, 1988. 1. The way multi-element ion implantation, in which the irradiation object ionic components photobrush atoms, characterized in that when irradiated in the same source form multi-element plasma of multiply charged ions, extracted from her multi-element beam with the electric field generated as a constant accelerating voltage, and send it in a magnetic separator with a relative resolution of not more than 10%, which forms a multi-element beam containing ionic components photobrush atoms with different relative to each other by the values of the ratio of the mass of the ions to their charge not more than 10% and scan the formed multi-element beam on the surface of the irradiated object. 2. The way multi-element ion implantation, in which the irradiation object ionic components photobrush atoms, characterized in that when irradiated in the same source form multi-element plasma of multiply charged ions are then extracted from it multielement beam of these ions through periodically and sequentially changing the amplitude of the accelerating voltage, the change of the amplitude which is inversely proportional to the ratio of the mass of the ions to their charge for a given photobrush at the MOU then the beam is directed in a magnetic separator, which emit ions with equal relationship of momentum to the charge and transported them to the irradiated object.
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