The method of ion doping of solids |
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IPC classes for russian patent The method of ion doping of solids (RU 2193080):
  
 The method of formation of silicon nanostructures, lattice silicon quantum wires and devices / 2173003
The invention relates to a method of formation of quasi-one-dimensional solid silicon nanostructures
 Installation for the formation of nanostructures on the surface of semiconductor wafers ion beams / 2164718
The invention relates to electronic and vacuum technology
 Method of forming solid-state nanostructures / 2141699
The invention relates to methods of forming solid-state nanostructures, in particular semiconductor and optical, and can be used when creating the new generation devices in microelectronics, and optical instrumentation
 The way heteronomy processing of silicon substrates / 2134467
The invention relates to the field of semiconductor devices and can be used for fabrication of discrete devices and integrated circuits for cleaning (gettering) of the original substrates and structures based on single-crystal silicon from the background impurities and defects
 The method of doping silicon chalcogenide / 2069414
The invention relates to the production technology of semiconductor devices, in particular to the process of doping silicon chalcogenide, and can be used in the manufacture of temperature sensors, photodetectors
 The method of producing structures with buried metal layer / 2045795
The invention relates to a semiconductor microelectronics and can be used in creating technology based on silicon, gallium arsenide or other semiconductors and dielectrics with buried metal layer transistors with a static induction (SIT), permeable base (TPB) or with a metal base (TMB), which is the solid-state analogue of the vacuum triode, or get a built-in layers with metallic conductivity in integrated circuits
 A method of manufacturing a planar p+- n junctions on the inas crystals of n-type conductivity / 2045107
The invention relates to methods of manufacturing semiconductor devices and can be used in the manufacture of diodes, transistors, including photosensitive and photosensitive, as well as more complex devices on the InAs crystals with a high value of the breakdown voltage (UCR.), differential resistance (Rd) and quantum efficiency (
 ), as well as high stability of parameters
 A method of obtaining a thin dielectric coatings / 2044367
The invention relates to the technology of microelectronics, namely, to obtain a dielectric film used as the interlayer, passivating and selectively transmissive (masks or photolithography) coatings in the manufacture of multi-level of very large scale integrated circuits (VLSI) based on the connection type AND2IN5or compounds having the properties of high-temperature superconductivity (HTS), which require low temperature processing
 Boule of the iii-v groups element nitride used for production of substrates and the method of its manufacture and application / 2272090
The invention is pertaining to production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules and may be used in semiconductor engineering. Substance of the invention: the boule of III-V groups chemical element nitride may be manufactured by growing of the material of III-V groups the chemical element nitride on the corresponding crystal seed out of the same material of nitride of the chemical element of III-V of group by epitaxy from the vapor phase at the speed of the growth exceeding 20 micrometers per hour. The boule has the quality suitable for manufacture of microelectronic devices, its diameter makes more than 1 centimeter, the length exceeds 1 millimeter, defects density on the boule upper surface is less than 107 defects·cm-2.
Method for alloying metals in films / 2276206
Method comprises steps of spraying and simultaneously displacing in space metal and alloying element to nano-dispersed state in low-pressure plasma and their co-deposition in the form of sub-layers at alternating repeating crossing of plasma fluxes; depositing each layer in the form of "island" type coating with particle size of metal and(or) alloying element less than critical size when particle is in liquid state at co-deposition. Invention provides significantly lowered temperature (about 100°C) of alloying - formation of solid solution.
 Method of multi-element ion implantation (versions) / 2285069
Two versions are proposed for realization of this method for forming on surface of object to be subjected to radiation multi-element beam at difference of ratio of ion mass to charge not exceeding 10% for each ion. According to first version, multi-element plasma of high-charge ions is formed in chamber of one source which is connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions is extracted from plasma with the aid of electric field formed by constant accelerating voltage and this beam is directed to magnetic separator which separates ion components of phase-forming atoms at difference in ratio of ion mass to its charge not exceeding 10% scanning over surface of object to be subjected to ration by this beam. According to second version, multi-element plasma of high-charge ions is formed in chamber of source connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions at respective energies is extracted with the aid of electric field formed by modulator of accelerating voltage amplitude; this field changes in amplitude periodically and successively. Ions accelerated periodically and successively for selected energies are directed to object to be subjected to radiation though magnetic separator.
 Identification mark for marking valuables and method of making said mark / 2373307
Invention relates to apparatus and methods of marking valuables, mainly precious stones, particularly cut diamonds, and can be used for subsequent identification of data of the valuables. Mark 1 is made in form of an image, which is optically visualised in diffraction-reflection light, made on the polished surface 3 of the valuable object 2. The structure of the image is formed by a modified area of the surface layer of the object 2 with optical properties in the said area, which is functionally the image of mark 1, altered from the initial properties. The modified area is made in form of microlines 8, spatially formed according to type of the reflection grating, which is functionally an apparatus for increasing contrast of visual perception of the image of marker 1 in at least one of the colour hues of the spectrum of incident radiation. The structure of microlines of the modified area includes at least one impurity additive, which is selected from a group which includes noble metals or boron, ion-implanted into atomic lattices of the initial material of the object without breaking interatomic bonds of these lattices and, therefore, without changing quality of the polished surface of the object, but with change of the complex refractive index of this material. According to the method of making mark 1, before modification, a technological layer (TL) of material, which is removed after modification, is deposited on surface 3. A structure is formed in the technological layer according to type of the line grating. The corresponding area of the surface layer is modified by exposing this area to an ion beam through a mask with an image of mark 1 and the spatial structure formed in the technological layer, that way creating process conditions implantation of modifier ions into the modified area of the surface layer of the material of object 2 without breaking bonds in the atomic lattices of this material and, therefore, without changing initial quality of polishing the surface layer, but with change of its initial optical properties. The modifier used is impurity additives, selected from a group which includes noble metals or boron, ions of which alter the complex refractive index of the modified layer.
 Method for ion-beam doping of chips / 2258977
Proposed method for ion-beam doping of chips that can be used for organizing regions of medium energy ions of 10 - 500 keV in chips of regions of different conductivity and its polarity includes implantation of accelerated ions of doping impurity in chip and annealing; prior to annealing surface resistance is measured on irradiated side of chip, the latter is subjected to ultrasonic treated with chemically inactive liquid at frequency of 20 - 40 kHz, and this treatment is ceased as soon as resistance is brought to steady state value, whereupon annealing is made not later than in 24 hours after treatment.
 Method for producing perfect epitaxial silicon layers with buried n+- layers / 2265912
Proposed method for producing perfect ion-doped silicon structures or substrates for epitaxial growth includes oxidation and photolithography operations to localize n+ regions, ion implantation of antimony, and diffused redistribution of dope in oxidizing medium, removal of oxide, and epitaxial growth. Antimony is implanted under combined conditions at energy E = 60 - 100 keV, dose rate D = 400 - 2000 μKl/cm2 (Φ = 2.5·1015 - 1.25·1016 cm-2) and scanning current density Jsc = 6 15 μA/cm2 ensuring ion-stimulated crystallization of surface amorphous layer. Further redistribution of implanted dope along with formation of microrelief on structure surface results in temperature T = 1493 K (1220 °C) within time t = 120 - 900 minutes, first within 120 - 120 minutes in dry oxygen medium, then in gas mixture of dry nitrogen incorporating 5 - 15% of dry oxygen.
Method of multi-element ion implantation (versions) / 2285069
Two versions are proposed for realization of this method for forming on surface of object to be subjected to radiation multi-element beam at difference of ratio of ion mass to charge not exceeding 10% for each ion. According to first version, multi-element plasma of high-charge ions is formed in chamber of one source which is connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions is extracted from plasma with the aid of electric field formed by constant accelerating voltage and this beam is directed to magnetic separator which separates ion components of phase-forming atoms at difference in ratio of ion mass to its charge not exceeding 10% scanning over surface of object to be subjected to ration by this beam. According to second version, multi-element plasma of high-charge ions is formed in chamber of source connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions at respective energies is extracted with the aid of electric field formed by modulator of accelerating voltage amplitude; this field changes in amplitude periodically and successively. Ions accelerated periodically and successively for selected energies are directed to object to be subjected to radiation though magnetic separator.
Method of synthesis of superconducting inter-metallic joint in films / 2285743
Proposed method is used in forming multi-level superconducting scheme inside film non-superconducting coat. Proposed method includes joint ion-plasma spraying of targets of initial metals at deposition of film non-superconducting coat from solid solution of metals on substrate. Film coat thus obtained is acted on by flow of ionized particles relative to one another at rate and energy sufficient for initiating reaction of inter-metallization and dissipation at preset depth from surface of coat for forming multi-level superconducting scheme inside film non-superconducting coat. Change in depth of levels and connection of sections of levels of different depth is effected through change of energy of flow and depth of dissipation from larger magnitudes to lesser ones.
 Method for radiation-induced gas spalling of fragile crystalline materials (alternatives) / 2297691
Proposed method that can be used for manufacturing semiconductor-on-insulator devices and producing submicron depressions of various geometric shapes includes irradiation of wafers with gas atom ions; in the course of irradiation with ions of one type of has atoms wafer is sequentially and/or periodically implanted with ions accelerated to different energies; irradiation is conducted with hydrogen ions. As an alternative, proposed method can include radiation-induced gas spalling of wafer with gas atom ions; in the course of irradiation with ions of one type of gas atoms wafer is sequentially and/or periodically inclined through desired angle relative to incident ion beam; angle of inclination is evaluated from calculated distance between damage and dope profile maximums for desired parameters of material, type and energy of ions.
 Method for manufacturing semiconductor structure / 2298250
Proposed method for manufacturing semiconductor structure includes formation of insulator on semiconductor substrate and formation of thin silicon film on insulator. Structure obtained is treated upon formation of silicon film with boron ions at dose rate of (1 - 3)1012 cm-2 and energy of 25-35 keV followed by annealing at temperature of 200-300 °C for 15-20 s.
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(57) Abstract: The invention relates to the field of doping of solids by ion irradiation photobrush elements and can be used for ionic modification of structure and physico-mechanical properties of metals, semiconductors and superconductors. The method of ion doping of solids is that simultaneously or sequentially irradiate the object with ions of inert gas ions and photobrush elements, and by irradiation with ions of inert gas in the object form a gas nanopores with simultaneous or sequential filling volume ions photobrush elements. The invention solves the problem of increasing the efficiency of ion doping and implementation of practical implementation of the conditions of formation and synthesis in solids monodisperse nanomedicine different phases with a high bulk density. 4 Il. The invention relates to the field of doping of solids by ion irradiation photobrush elements and can be used for ionic modification of structure and physico-mechanical properties of metals, semiconductors and superconductors. Know sirohey materials specified size and density of precipitates of secondary phases, determine their physical, chemical and mechanical characteristics. A distinctive feature of the ion doping is the possibility of doping of any object (without limitation) elements, including not having a solubility in the material of the object. This fact has contributed to a broad application of the principles of ion modification of the structure in order to control the chemical, physical and mechanical properties. It is known that for the purpose of modifying the physical-mechanical properties of solids using irradiation of the same object multiple types of ions in various combinations and sequences depending on the purpose of the ionic modification. So, to change the physical properties of semiconductors using sequential irradiation by ions of the inert gas and the corresponding doping ions [1]. The choice of the inert gas ions due to the need to increase only the number of radiation defects in the condition of neutrality of the ion itself to changes in the physical properties of the irradiated semiconductor and the lack of chemical interaction with atoms of the semiconductor, and alloying atoms. I.e., the main drawback in similar ways="ptx2">It is known that the irradiation with helium ions in combination with irradiation by ions of heavy atoms is used for the simulation of radiation effects, such as radiation-induced swelling of reactor materials arising during their irradiation in a nuclear or thermonuclear reactors [2]. In this case, the presence of helium atoms in small concentrations (10-3at.%) simulates the condition of their accumulation in materials irradiated with neutrons fission channels of nuclear reactions of the type (n), and additional irradiation by ions of heavy atoms simulates accelerated defect formation. In all of these analogues ions of inert gases are not applied with the aim of solving the problems of the formation and synthesis in solid selections of different phases, which is a major drawback. This is widely used their exposure to relevant fazoobrazovanie elements, i.e., ions of chemically active elements. Basically use the sequential addition of two types of ions photobrush elements capable interacted to form a certain allocation of secondary phases in the irradiated volume of the solid resulting after-radiation high temperature annealing. It is known that in Catal + ions of carbon), nitrides (i.e., exposure to metal ions + nitrogen ions), etc. Of course, to provide conditions for the formation of the phases of the alloying elements, it is necessary that the concentration exceeded the limit of their solubility in the lattice of irradiated material. In this regard, the fluence of the particles should be large and is at least 1017cm-2that usually used in practice. In addition, nucleation and growth of similar discharge, a relatively high temperature exposure or after-radiation annealing. However, due to the fluctuation mechanism of nucleation of phases from supersaturated solid solution is practically impossible to provide a very important condition for the formation of monodisperse (one dimensional) nanomedicine high bulk density. To resolve this problem, you need some way to solve the problem of separation of the nascent stages of nanomedicine from a stage of their growth. The main disadvantages of methods used ion doping:- need a big time exposure for achieving desired radiation dose at rated flow of ions; - high temperature (>0.5 Tthe Plava) irradiation or after-radiation tigalda dispersion of precipitates in size due to the fluctuation mechanism of simultaneous nucleation and growth; - inability to provide conditions for the formation of a strictly defined nanometrovogo size and high bulk density allocations; - the difficulty of obtaining incoherent (with a sharp interfacial boundary) allocations of nanometric size in the crystal lattice of the irradiated object. The purpose of the proposed method is to increase the efficiency of ion doping and implementation of practical implementation of the conditions of formation and synthesis in solids monodisperse nanomedicine different phases with a high bulk density. This objective is achieved in that by irradiation with ions of inert gas in the object form a gas nanopores with simultaneous or sequential filling volume ions photobrush elements. Introduction in the process of ion doping additional irradiation by ions of the inert gas allows the irradiated volume of material nanometric systems gas atoms+jobs", for example in the form of gas nanopores. These gas nanopores are a place of accumulation of the alloying atoms with simultaneous or subsequent exposure of the object ions photobrush elements both in their dynamic range is hnestly nanopores. I.e., the surface of the nanopore is the center of simultaneous nucleation of precipitates, and the volume of the nanopores is submitted for their growth. The size and density of precipitates controlled by parameters of the gas nanopores, which in turn are determined exposure conditions (dose, intensity, temperature). Moreover, extremely high gas pressure in nanopores (hundreds of thousands of atmospheres) may also contribute to the synthesis of new phases at lower temperatures, irradiation or after-radiation annealing. The most convenient from a practical point of view the implementation of the proposed method are helium atoms. Sources+possess a high level flow of particles, which allows effective for a short time to achieve the required high (1-10 at.%) concentrations of helium atoms in the irradiated volume of the object. Moreover, ions do Not have a large projective pre-owned, which ensures its implementation in the irradiated object at great depths, stimulating the diffusion there photobrush elements. It is known [3] that helium pores in solids can emerge and grow even at room temperature irradiation. However, they form an ensemble of pores with high (&irout in the irradiated matrix material ordered superlattice nanopores, ensuring the maximum possible bulk density with minimum size. In our first experiments have shown that the atoms do Not stimulate the redistribution of alloying elements in the lattice of the material [4], initiate the formation of precipitates [5] , contribute to the synthesis phase, such as boron nitride [6], and their accumulation in the form of helium then effectively gettering alloying elements, such as carbon [7]. The last unexpected circumstance at the present time is effectively used for cleaning silicon impurities of transition metals [8]. Thus, the necessary and sufficient complex of reliable experimental evidence stimulated diffusion of impurities and the initiation of nucleation and growth of precipitates of secondary phases in the presence of mobile complexes atom of helium + vacancy" and their clusters in helium nanopores. These circumstances provide a solid basis to argue about the possible practical implementation of the proposed method for the rapid and controlled process of phase formation in ion-irradiated materials in the presence of gas-filled nanopores. The use of effective Hutterites), does not require the execution of one of the conditions of phase formation - the creation of a supersaturated solid solution. So to fill the volume of helium nanopores (the volume of which does not exceed 0,01-0,1%) required a significantly lower concentration of alloying elements. This requires a correspondingly smaller amount of alloying elements in the material volume and, consequently, smaller fluence of particles, i.e. less time exposure. For example, to fill gazoobraznymi element of the volume of the gas nanopores with a diameter of 1nm and a density of 1017cm-3in the irradiated volume of the object in the order of 10-5cm-3should the irradiation ions gazoobraznogo element to a fluence of about 31013cm-2. This is three to four orders of magnitude smaller than in the case of irradiation of the object ions photobrush elements in the absence of gas nanopores. In Fig.1 shows the results of Auger analysis of the elemental composition of the surface intercrystalline fracture type steel 18CR10NITI, alloy helium and subjected to after-radiation annealing. It is seen that with increasing temperature after-radiation annealing increases the concentration of alloying elements at the grain boundaries, which is the predominant runoff on what I stimulated the mobility of the alloying elements. At a higher temperature annealing stainless steel (on a background of reverse diffusion of impurities in the matrix grain) celebrated the fact stabilize the grain boundaries of high concentrations of boron and nitrogen, apparently, in the form of boron nitride synthesized in helium pores. In Fig.2 shows the predominant formation of precipitates of secondary phases in the area of the sample (b) type steel IN doped helium. In non-irradiated areas of the same sample (a) and plot (), which includes only radiation defects, similar discharge does not occur. This result directly indicates the effect of stimulation of the formation of secondary phases in the presence of helium nanopores. In Fig. 3 shows an example image of helium nanopores filled carbon atoms, carbon steel, alloy helium and subjected to after-radiation annealing, indicating heteronomy ability helium nanopores. In Fig. 4 shows an example of nucleation and growth of the carbide phase in helium pores in carbon steel, alloy helium, showing the ability of helium then to serve as the center of nucleation of new phases. Thus, the above rezultata, about heteronomy ability helium nanopores and the preferential nucleation on them secondary phases. In addition, there is reason to believe about the possibility of synthesizing new phase in helium nanopores in conditions of high gas pressure in them. The size, density and distribution of gas nanopores in the irradiated volume of the object are set and controlled parameters of irradiation with ions of inert gases (flow of ions and irradiation dose), and temperature exposure or after-radiation annealing. Technically, the procedure of formation of a given size, dispersion and density of precipitates of secondary phases in the irradiated volume of the object can be carried out with the following combination of irradiation and thermal effects: - simultaneous irradiation by ions of the inert gas ions and photobrush elements (temperature conditions are selected either during exposure or after); preliminary irradiation by ions of the inert gas to form a set of parameters of the gas nanopores in the irradiation process, and the after-radiation annealing and subsequent ion irradiation photobrush elements (temperature conditions of formation of secondary discharge feet to be implemented in any industrial ion source. Especially good for this is the source of multiply charged ions of type ECR (electron cyclotron resonance) capable of forming in one beam all the necessary ions with the same pulse with the specified relative intensities. The method is most effective when the ionic modification of structure and properties of solids, such as hardening of metals and alloys, the formation of secretions from the quantum size in semiconductors and the creation of pinning centers in superconducting materials. The proposed method provides in comparison with existing methods the following benefits: controlled and reproducible formation of precipitates of secondary phases with a given dispersion, size and density, because they are controlled by similar parameters of gas porosity; - significant decrease in fluence of ions photobrush elements, i.e., reducing the time of exposure; - reduction of temperature exposure or after-radiation annealing by providing the radiation-stimulated diffusion photobrush elements; - the possibility of the formation of nanoscale decoherent the R. S. Nelson. Improvements in or relating to semiconductors and methods of doping semiconductors. Patent UK 1 269 359, 1968. 2. K. Farrell. Experimental effects of helium on cavity formation during irradiation-a review. Radiation Effects. 1980, v.53,3/4, (175-194). 3. A., Zaluzhny, Y. N. Sikorski, C. N. Tebus. KN. Helium in the reactor materials." M, Energoatomizdat, 1988, s. 4. Ibragimov W. W. , Reutov C. F., Ilyin A. M., Saskura centuries Auger spectroscopy surface fracture of steel 18CR10NITI, alloy helium and hydrogen. Radiation Effects Letters, 1983, 76(5), (173178). 5. Reutov C. F., Ibragimov W. W., Vagin, S. P., Otelbaev B. D. Effect of helium on the formation of precipitates in the steel CHNM. Rad. Effects. 1986, 97, No. 1-2 (149-154). 6. Reutov C. F., Ibragimov W. W., Ilyin A. M. Auger spectroscopy surface fracture of steel NM irradiated with alpha particles. Rad.Effects Express. 1987, N1 (9-14). 7. Reutov C. F., Semin C. K., Sohatsky A. S. Electron microscopic study of carbon steel, filled with helium and subjected to after-radiation phase recrystallization. Metals, 1, 2000, (124-126). 8. V. Raineri, P. G. Fallica, G. Percolla and et.al. Gettering of metals by voids in silicon. J. Appl. Phys. 78 (6), 1995, (3727-3735). The method of ion doping of solids, consisting in simultaneous or sequential irradiation of the object ions of inert gas ions and phases of the s nanopores with simultaneous or sequential filling volume ions photobrush elements.
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