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IPC classes for russian patent Hybrid photosensitive circuit (hpc) (RU 2519052):
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FIELD: physics.
SUBSTANCE: hybrid photosensitive circuit includes a diamond matrix photodetector, indium columns and a silicon multiplexer with sensitive sites arranged thereon in a staggered manner in form of a rectangular matrix and the number of which is equal to the number of indium columns. The matrix photodetector includes a diamond plate and an upper flat electrode lying thereon, as well as lower electrodes of sensitive elements of the matrix photodetector, the number of which is equal to the number of indium columns lying under the diamond plate. On the lower side of the diamond plate there are boron-doped sites arranged in a staggered manner; upper contact surfaces of odd or even lower electrodes are galvanically connected to the lower surface of the diamond plate, and the upper contact surfaces of the odd or even lower electrodes are galvanically connected the boron-doped sites. Lower contact surfaces of lower electrodes are galvanically connected through indium columns to sensitive elements of the silicon multiplexer.
EFFECT: expanding the detected radiation range 75-fold owing to simultaneous recording of the image in the ultraviolet and infrared spectrum.
3 dwg
The invention relates to the field of semiconductor electronics and can be used to create multi-spectral and multi-element photodetectors.
Known multiple microelectronic device, in which individual elements sensitive layer, receiving radiation in different working spectral ranges, are arranged alternately to each of the columns, which allows to solve the problem of extension program range due to the design complexity of the multiplexer. The signals from these elements come in low noise transimpedance amplifiers schematic reading, are different for each of the two types of receivers, the gain and capacity of the cells to the accumulation of charges. ("Long-wavelength 128×128 GaAs quantum well infarared photodetector arrays" - B.F. Levine et.al., Semicjnd,. Soi. Technol. 1991, v6. With 114-C119.).
The disadvantage of this design is that for each of the two types of receivers have to produce a type of amplifier, with different gain and capacity of the cells to the accumulation of the charges, which is technically very difficult and greatly increases the cost of the final product.
Also known solution which is taken as a prototype of the invention, photosensitive hybrid scheme (GFS), which contains the diamond matrix photodetector (MFP), not less than 4 indium columns and the silicon multiplex is sensitive sites, the number of which is equal to the number of indium columns (Figure 1).
The composition of the MFP includes the top semi-transparent to ultra violet (UV) radiation is a flat electrode 1 to which is supplied a bias voltage, diamond plate 2 and lower electrode 3 sensitive elements diamond FPM, the number of which is equal to the number of indium columns, from which is removed the signal. The lower electrodes 3 are electrically connected through the indium columns 4 sensitive elements 5 silicon multiplexer 6, which are located on its top surface in a checkerboard pattern in the form of a rectangular matrix with the axes X and Y of a Cartesian coordinate system.
The upper contact surfaces of the lower electrodes 3 are electrically connected with the bottom surface diamond plastilina 2.
The number of indium columns on each of the axes X and Y matrix of a sensor at least two. The matrix of the photodetector along the axes X and Y has the same steps. (flip-chip Assembly). (Altukhov A.A., Feshchenko V.S., Mityagin monitoring computerized. et al. A 128×128 Pixel Ultraviolet Photodetector Based on a Diamond Sensor// Radiotekhnika i elektronika. - 2010. - v.55. No. 6, p.764-768.)
The shortcoming of the prototype - detection of only the UV range of the spectrum of radiation caused by a range of photosensitivity photodetector.
Signs of a prototype that matches the features of the invention.
Diamond matrix photodetector (MFP). At least four indium the bars 4. Silicon multiplexer 6 with sensitive pads 5, which are arranged on it in a checkerboard pattern in the form of a rectangular matrix, the number equal to the number of indium columns. The composition of the MFP includes diamond plate 2 and a top flat electrode 1 and lower electrode 3 sensitive elements diamond MFP according to the number equal to the number of indium columns, which are located under the diamond plate 2. The lower contact surfaces of the ends of the lower electrodes 3 are electrically connected through the indium columns 4 sensitive elements 5 silicon multiplexer 6.
The technical result of the invention is to increase the range and simultaneous registration of radiation in the infrared (IR) and UV-spectral range of the radiation.
The technical result of the invention is achieved by doping with boron sites 9 the bottom surface of the diamond plate 2.
The invention is illustrated by drawings.
Figure 2 presents the design of photosensitive hybrid schemes (GFS) according to the invention, where the above symbols: 1 - upper translucent platinum electrode with Windows diamond MFP (figure 3); 2 - diamond plate diamond MFP; 3 - lower electrodes of the sensing element diamond MFP; 4 - indium columns; 5 - sensitive elements silicon multiplexer; 6 - silicon mu is tiplexer; 7 - falling, the measured radiation; 8 - filtered infrared radiation; 9 - pad bottom surface of the diamond plate 2, doped with boron.
Figure 3 shows a top view of the upper platinum electrode 1 FPM, where the numbers in the circles indicate: 1 - the place of deposition of platinum, 2 - window in the electrode for the passage of PC-radiation.
The technical result of the invention is achieved due to the fact that hybrid photosensitive scheme (GFS) contains MFP, not less than 4 indium columns 4, which signal is removed, and the silicon multiplexer 6 sensitive elements 5.
The composition of the MFP includes top flat platinum electrode 1, diamond plate 2, the lower electrodes 3 sensitive elements diamond MFP and doped with boron platform 9 diamond plate 2, which are located opposite the Windows in the electrode 1 made in a checkerboard pattern over the upper ends of the lower odd or even lower electrode 3.
The upper contact surface of the lower even-numbered or odd-numbered electrodes 3 are electrically connected with the bottom surface of the diamond plate 2 and the contact surface of the lower odd-numbered or even-numbered electrodes electrically connected to the pads 9, doped with boron.
The lower electrodes 3 are electrically connected through the indium columns 4 sensitive elements 5 silicon multiplexer 6 to the verge located on its top surface in a checkerboard pattern in the form of a rectangular matrix with the axes X and Y.
The number of lower electrodes 3 and the number of sensitive elements 5 is equal to the number of indium columns 4, and the number of boron-doped areas 9 two times less than the number of indium columns 4.
Flat top platinum electrode 1 diamond MFP receives the incident measuring radiation, served on the bias voltage. The electrode 1 through the stencil with Windows for the passage of infrared radiation is applied, for example, plating, semi-transparent to UV-radiation layer of platinum (figure 3).
Flat diamond plate 2 is designed to detect UV radiation, which required size are cut from natural or synthetic diamond, or by growing diamond films by artificial means, such as CVD method from the gas phase methane 3% hydrogen and 97%.
Site 9 diamond MFP, doped with boron, are used to detect infrared radiation. These sites create by implantation of boron in the lower surface of the diamond plate with its subsequent activation by annealing (Rissel X., I. Ruge Ion implantation. -M.: Nauka. - 1983. - 360 C.) and placed opposite the upper contact surfaces of the lower electrodes 3. The dimensions of the pads 9, boron-doped, should be not less than the dimensions of the contact surfaces of the electrodes 3.
The lower electrodes 3 sensitive elements diamond MFP is used to gather the elect is practical signal, resulting from the detection of radiation in each photodetector on the diamond plate. The lower electrode 3 is made by sputtering a metal, for example gold, diamond plate 2, and the steps along the axes X and Y are equal and are the same as steps window in the electrode 1 and the sensitive pads 5 located on the multiplexer 6.
Indium columns 4 are intended for transmission of an electrical signal with the lower contact surfaces of the lower electrodes 3 sensitive elements diamond MFP on sensitive areas 5 silicon multiplexer 6.
Indium columns 4 is performed by applying India through the mask on the lower ends of the lower electrodes 3 sensitive elements diamond MFP and on the sensitive elements 5 silicon multiplexer 6, and their subsequent fusion during Assembly. The lower contact surface of the indium columns 4 through sensitive pad 5 is electrically connected with the top surface of the silicon multiplexer 6.
Sensitive elements 5, the size of which is not smaller than the lower ends of the indium columns 4, made on the basis of CMOS (complementary logic transistors metal-oxide-semiconductor) technology. (Troshenkov M.A. Photodetecting device and the CCD. Detection of weak optical signals. - M.: Radio and Communication, 192. - 400 S.: ill.) and are used to input an electrical signal in the silicon multiplexer 6.
Flat silicon multiplexer 6 performs amplification, switching and signal processing and its sensitive pad 5, and outputs the electric signal to the information display system, it is made on the basis of CMOS technology. (Troshenkov M.A. Photodetecting device and the CCD. Detection of weak optical signals. - M.: Radio and Communication, 1992. - 400 S.: ill.)
GFS works as follows (Figure 2). Upon irradiation of the electrode 1 broadband radiation 7 of its UV component is absorbed and causes the sensing elements diamond GIF photo libraries, through which even or odd indium columns 4 is supplied to a silicon multiplexer 6 and is detected as an ultraviolet signal. Infrared radiation 8 without absorption takes place through the Windows of the upper electrode 1 and gets on doped with boron platform 9 diamond FPM, where it is absorbed and causes the sensitive elements of the diamond GIF photo libraries, through which the odd-numbered or even-numbered indium columns 4 is supplied to a silicon multiplexer 6 and is detected as infrared radiation.
The principal difference between the proposed design of the prototype is that, on the one hand, diamond MFP holds all the hard UV-radiation (UV radiation delayed the AET diamond, while platinum is partially transmit UV radiation, however, delays the IR-radiation). On the other hand, the infrared radiation passes through the window of the upper electrode MFP (figure 3) and detected on boron-doped sites 9 diamond MFP.
Based on the above it can be argued that the differences between the proposed device from analogues are significant, as specified in combination they provide the technical result - the expansion of the program range. To create a GFS on almost all stages can be used in standard processes, suggesting the possibility of its industrial applications.
An example implementation of GFS.
Was manufactured and tested a prototype GFS.
The upper electrode 1 diamond MFP is performed by sputtering platinum thickness 0,00004 mm, has dimensions of 4.2×4.2 mm and a rectangular shape presented in figure 3.
Diamond plate 2 of rectangular form carved from a natural diamond type IIA and has a width and length equal to the dimensions of the electrode 1, and a thickness of 0.3 mm
The lower electrode 3 is made by deposition of gold with a thickness of 0.001 mm and have dimensions: 0,02×0,02 mm
Indium columns have 4 dimensions: width of 0.015 mm, the length of 0.015 mm and height 0,008 mm
Sensitive pad 5 silicon multiplexer have the dimensions: width × length × thickness is = 0,015×0,015×0,02 mm
Doped boron region have dimensions: width × length × thickness = 0,02×0,02×0,001 mm
Silicon multiplexer 6 has dimensions of: there is a 10.03×10,85×5 mm
Technical characteristics of the prototype GFS.
| The spectral sensitivity range, microns |
|
UV channel |
for 0,19 0,23 |
| The IR channel |
0,8-3,3 |
| The threshold W/Hz1/2 |
|
UV channel |
9·10-12 |
| Visible and IR channel |
6·10-10 |
The technical result of the invention is achieved and expanded the detected radiation band from 33 nm to 2533 nm (about 75 times) due to the simultaneous registration of the image in the UV and IR spectrum of radiation.
Features of the invention
On the bottom side of the diamond plate 2 is formed in a checkerboard pattern doped with boron sites 9.
The upper contact surface of the lower even-numbered or odd-numbered electrodes 3 are electrically connected with the bottom surface of the diamond plate 2.
Top the contact surface of the lower odd-numbered or even-numbered electrodes electrically connected to the pads 9, doped with boron.
Hybrid photosensitive circuit containing diamond matrix photodetector (MFP), not less than four indium columns (4) and the silicon multiplexer (6) sensitive elements (5)arranged on it in a checkerboard pattern in the form of a rectangular matrix and by the number equal to the number of indium columns, and part of the MFP includes diamond plate (2), located on her upper flat electrode (1) and the lower electrode (3) sensitive elements diamond MFP according to the number equal to the number of indium columns located under the diamond plate, moreover, the lower electrodes (3) are electrically connected through the indium columns (4) sensitive elements (5) silicon multiplexer (6), characterized in that on the bottom side of the diamond plate (2) formed in a checkerboard pattern doped with boron sites (9), the upper contact surface even or odd lower electrodes (3) are electrically connected with the bottom surface diamond plastilina (2), and the upper contact surface of the odd or even lower electrodes (3) are electrically connected to the pads 9, doped with boron.
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