Hybrid photosensitive circuit (hpc). RU patent 2504043.
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 Photoelectric converter, imaging system / 2426195Proposed converter comprises multiple photo electric converters with light-sensitive surface, isolating films, multiple light guide sections arranged atop isolating films. Note here that each light guide section directs light onto light-sensitive surface and boundary sections. Note also that each boundary section forms boundary between adjacent light guide sections and is made from material with lower refractivity compared with that of light guide section material. Note also that width of each boundary section does not exceed half the minimum wavelength of visible light, and height from bottom to top surfaces of every light guide section makes at least double maximum wavelength of visible light. |
 Avalanche photodetector with expanded spectral recording range for optical-radiation / 2315393Proposed avalanche photodetector has semiconductor p-n layer and incident-radiation spectral compound converter in the form of fluorescent layer. Optically transparent layer of high refractive index is provided between incident-radiation spectral compound converter and semiconductor layer. |
 System for reading out information from stream camera / 2327209Invention pertains to the field of information-measuring and computer technology, and more specifically to systems for gathering data in research in nuclear physics and in elementary particle physics, and can be used for gathering information from stream cameras of coordinate hodoscope detectors with a large area. Directly in each read station of the device for reading out information from a stream camera, there are control circuits for the read stations, which are in the form of an output circuit of the station trigger and a multiplexer for transmission of data through the station, the control input of which connected to the output of the output circuit of the station trigger. In the serial data reading line, there is an extra line for serial reading from the read station triggers, serially connecting the output circuits of the station triggers. |
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| System for precision correction and control of charged particle motion / 2303311 Proposed system for precision correction and control of charged particle motion that can be used to implement raster electron microscopy at high resolving power depending on quantum correlation of uncertainty, ion microscopy with resolving power depending on ion energy and mass, transmission electron microscopy and enables development and investigation of pieces measuring up to 10-10 m and has source of charged particles (accelerated ions or electrons); diaphragm; electrostatic valve; charged-particle coordinate and speed recording system; charged particle motion correction system; recorded-signal refining and particle-motion correction signal supply system. Separate particle is extracted from charged particle flow by means of electrostatic valve, then its speed and coordinates are evaluated, electric field required for precision motion correction is calculated, calculated signal is supplied to motion correction system with the result that charged particle occurs at strictly defined point on target. |
| System for reading out information from stream camera / 2327209 Invention pertains to the field of information-measuring and computer technology, and more specifically to systems for gathering data in research in nuclear physics and in elementary particle physics, and can be used for gathering information from stream cameras of coordinate hodoscope detectors with a large area. Directly in each read station of the device for reading out information from a stream camera, there are control circuits for the read stations, which are in the form of an output circuit of the station trigger and a multiplexer for transmission of data through the station, the control input of which connected to the output of the output circuit of the station trigger. In the serial data reading line, there is an extra line for serial reading from the read station triggers, serially connecting the output circuits of the station triggers. |
 Hybrid photosensitive circuit (hpc) / 2504043Hybrid photosensitive circuit comprises: a diamond matrix photodetector (MPD), indium bars and silicon multiplexer sensitive sites. The structure of the MPD includes: an upper planar electrode, to which a bias voltage is applied, a diamond plate and lower electrodes of sensitive elements of the diamond MPD, from which the signal is picked. The lower electrodes are electrically connected through columns with indium arranged in a rectangular matrix with axes X and Y by sensitive elements of the silicon multiplexer. Number of indium columns on each X and Y axes must be at least two. In addition, the photodetector array of diamond in the X and Y has twice the pitch compared to the matrix of the silicon multiplexer, and lower electrodes of the diamond sensitive elements in the MPD are arranged in a staggered manner. The lower electrodes of the diamond sensitive elements of the MPD are connected electrically by indium bars only with odd or even sensitive sites of the silicon multiplexer, however, free sensitive sites of the silicon multiplexer may be used for recording visible and infrared radiations. |
 Hybrid photosensitive circuit (hpc) / 2519052Hybrid photosensitive circuit includes a diamond matrix photodetector, indium columns and a silicon multiplexer with sensitive sites arranged thereon in a staggered manner in form of a rectangular matrix and the number of which is equal to the number of indium columns. The matrix photodetector includes a diamond plate and an upper flat electrode lying thereon, as well as lower electrodes of sensitive elements of the matrix photodetector, the number of which is equal to the number of indium columns lying under the diamond plate. On the lower side of the diamond plate there are boron-doped sites arranged in a staggered manner; upper contact surfaces of odd or even lower electrodes are galvanically connected to the lower surface of the diamond plate, and the upper contact surfaces of the odd or even lower electrodes are galvanically connected the boron-doped sites. Lower contact surfaces of lower electrodes are galvanically connected through indium columns to sensitive elements of the silicon multiplexer. |
| Avalanche photodetector with expanded spectral recording range for optical-radiation / 2315393 Proposed avalanche photodetector has semiconductor p-n layer and incident-radiation spectral compound converter in the form of fluorescent layer. Optically transparent layer of high refractive index is provided between incident-radiation spectral compound converter and semiconductor layer. |
| Photoelectric converter, imaging system / 2426195 Proposed converter comprises multiple photo electric converters with light-sensitive surface, isolating films, multiple light guide sections arranged atop isolating films. Note here that each light guide section directs light onto light-sensitive surface and boundary sections. Note also that each boundary section forms boundary between adjacent light guide sections and is made from material with lower refractivity compared with that of light guide section material. Note also that width of each boundary section does not exceed half the minimum wavelength of visible light, and height from bottom to top surfaces of every light guide section makes at least double maximum wavelength of visible light. |
| Novel monomer and polymer materials / 2440389 Method of producing hybrid organic-inorganic material comprises the following steps: (a) peptisation of material of inorganic particles selected from oxides, sulphides, sulphates, phosphates, arsenides and arsenates of noble metals and mixtures thereof, in anhydrous sulphuric acid or hydrogen fluoride, to obtain a solution of material of inorganic particles; (b) fractionation of the solution obtained at step (a) to obtain a solution of inorganic particles having particle size ranging from 5 nm to 100 nm; (c) mixing the fractionated solution obtained at step (b) with an organic solvent; (d) reacting the mixture from step (c) with a solution of a reactive organic monomer with silane functional groups in an organic solvent. |
| Hybrid photosensitive circuit (hpc) / 2504043 Hybrid photosensitive circuit comprises: a diamond matrix photodetector (MPD), indium bars and silicon multiplexer sensitive sites. The structure of the MPD includes: an upper planar electrode, to which a bias voltage is applied, a diamond plate and lower electrodes of sensitive elements of the diamond MPD, from which the signal is picked. The lower electrodes are electrically connected through columns with indium arranged in a rectangular matrix with axes X and Y by sensitive elements of the silicon multiplexer. Number of indium columns on each X and Y axes must be at least two. In addition, the photodetector array of diamond in the X and Y has twice the pitch compared to the matrix of the silicon multiplexer, and lower electrodes of the diamond sensitive elements in the MPD are arranged in a staggered manner. The lower electrodes of the diamond sensitive elements of the MPD are connected electrically by indium bars only with odd or even sensitive sites of the silicon multiplexer, however, free sensitive sites of the silicon multiplexer may be used for recording visible and infrared radiations. |
 Luminescent photovoltaic generator and waveguide to be incorporated with photovoltaic generator / 2515182Invention relates to luminescent photovoltaic generator (1) and waveguide to be incorporated with said generator. Photovoltaic generator comprises photovoltaic element (4) and waveguide including transparent matrix (2) containing particles of inorganic luminescent material distributed therein and/or inorganic luminescent material located on at least one its side. Waveguide is associated with photovoltaic element (4) so that at using a portion of light emitted from luminescent materials is fed to photovoltaic element (4) to generated voltage therein. Note here that said inorganic luminescent material features, in at least one of UV, visible and IR bands, the absorption line width of 50 nm or larger, emission line width of 20 nm of smaller and Stokes shift of 50 nm or larger. |
FIELD: electricity.
SUBSTANCE: hybrid photosensitive circuit comprises: a diamond matrix photodetector (MPD), indium bars and silicon multiplexer sensitive sites. The structure of the MPD includes: an upper planar electrode, to which a bias voltage is applied, a diamond plate and lower electrodes of sensitive elements of the diamond MPD, from which the signal is picked. The lower electrodes are electrically connected through columns with indium arranged in a rectangular matrix with axes X and Y by sensitive elements of the silicon multiplexer. Number of indium columns on each X and Y axes must be at least two. In addition, the photodetector array of diamond in the X and Y has twice the pitch compared to the matrix of the silicon multiplexer, and lower electrodes of the diamond sensitive elements in the MPD are arranged in a staggered manner. The lower electrodes of the diamond sensitive elements of the MPD are connected electrically by indium bars only with odd or even sensitive sites of the silicon multiplexer, however, free sensitive sites of the silicon multiplexer may be used for recording visible and infrared radiations.
EFFECT: expansion of the range of detected radiation, due to simultaneous recording of images in ultraviolet, visible and infrared spectra, longer life of HPC by eliminating ingress of hard UV radiation into a multiplexer.
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The invention relates to the field of semiconductor electronics and may be used when creating a multi-spectral multielement photodetectors.
Known multipart microelectronic devices, in which individual elements of the sensitive layer, receiving radiation in different working spectral ranges are alternately, in separate columns, which allows to solve the problem of expanding the program scope, by design complexity of the multiplexer. Signals from these elements come on amplifiers readout scheme, have different for the two types of receivers gains and capacity of the cells accumulation of charges of Long-wavelength 128 x 128 GaAs quantum well infarared photodetector arrays" - B.F. Levine et.al., Semicjnd,. Soi. Technol. 1991, v6. C. 114-C119).
The disadvantage of this design is that for each of the two types of receivers have to produce a type of amplifier, with different coefficients of amplification and capacity of cells accumulation of charges that technically very difficult and significantly increases the cost of the end product.
In addition, in this case remains unresolved the issue of protection of silicon multiplexer from the hard UV radiation, which leads to a significant decrease its reliability and lifetime.
Also known decision taken as a prototype of the invention, when (Fig 1.) hybrid photosensitive circuit containing: diamond matrix photodetector (MFP), columns 4 and silicon multiplexer 6 with sensitive sites 5, and part of the MFP includes: upper flat electrode 1, which is served offset voltage, diamond plate 2 and bottom electrodes 3 sensitive elements of the diamond FPM, which removed the signal, and the bottom electrodes 3 galvanically connected through 4 bars placed in the form of a rectangular matrix with X and Y axes of sensitive elements 5 silicon multiplexer 6, and the number of indium columns on each of the axes X and Y not less than two. Matrix photodetector on the X and Y have the same steps (flip-chip-Assembly). (A.A. Altukhov, Feshchenko V.S. Mityagin A.Yu. et al. And a 128 x 128 Pixel Ultraviolet Photodetector Based on a Diamond Sensor // Radiotekhnika i elektronika. - 2010. - v.55. - №6, p.764-768).
The disadvantage of this design is to limit the range program of UV radiation range of the spectrum due to the range of photosensitivity photodetector matrix.
Signs of a prototype, coinciding with the features of the invention: the prototype of the invention consist of two main parts - an integrated circuit detection of UV radiation and silicon integrated circuit convert the received signal, in which the photodetector matrix electrically connected with the silicon matrix multiplexer through indium in columns (flip-chip-Assembly).
The technical result of the invention is to expand the program range of radiation in UV spectral range, increase of term of service at the expense of exception of hit hard UV radiation on the multiplexer and the possibility of registration of images simultaneously and in ultraviolet, visible and infrared range of the spectrum.
The invention is illustrated by drawings.
Figure 1 shows the design of hybrid photosensitive scheme (GFS), where the introduced notations: 1 - the top electrode diamond MFP; 2 - diamond plate; 3 - bottom electrode sensing element diamond MFP; 4 - bars; 5 - sensitive pad silicon multiplexer; 6 - silicon multiplexer; 7 - incident radiation; 8 - filtered radiation.
Figure 2 shows the location of sensitive sites 5 at the multiplex.
Figure 3 shows the location of the bottom electrodes 3 on the MFP.
Figure 4 shows the top-the platinum electrode 1 FPM, where the numbers in circles indicate: 1 - designated deposition of platinum, 2 - window in the electrode for the passage of visible and infrared radiation.
The technical result of the invention is ensured by the fact that the diamond matrix photodetector has twice step X-axis and Y (Fig 2), than matrix silicon multiplexer 6, which allows not only register the UV radiation in photosensitive elements of the matrix photodetector 3 associated with silicon matrix multiplexer 5 columns 4 and visible light with infrared radiation, which, passing in between the bottom electrodes 3, reaches sensitive sites silicon multiplexer 5, have not been bars.
The technical result of the invention is due to the fact that the hybrid photosensitive scheme (GFS) contains: diamond matrix photodetector (MFP), columns 4 and silicon multiplexer 6 with sensitive sites 5.
In the composition of the MFP includes: upper flat electrode 1, diamond plate 2 and bottom electrodes 3 sensitive elements of the diamond MPF.
Flat top electrode 1 diamond MFP serves for reception of the incident radiation, which is served bias voltage. On the top flat electrode 1 is a matrix strictly along the axes X, Y individual photodetectors, through the spraying of a transparent for UV-radiation layer of platinum diamond plate 2 (figure 2).
Flat diamond plate 2 is intended for the detection of UV-radiation is produced by cutting of natural or synthetic diamond, or by growing diamond films by artificial means CVD method of methane gas phase 3% hydrogen 97%.
Bottom electrodes 3 sensitive elements of the diamond MFP is used to gather the electrical signal resulting from the detection of UV radiation in each photodetector on the diamond plate, and is made by the deposition of metal, such as gold, diamond plate 2 with the size of the flat end column 4.
column 4 is intended for transfer of electric signal with the bottom electrode 3 sensing element diamond MFP on the sensitive area 5 silicon multiplexer 6, which is made by applying India through a mask on the bottom electrode 3 sensing element diamond MFP and sensitive area 5 silicon multiplexer 6, followed by alloying halves during Assembly. The lower ends of indium columns 4 through sensitive areas 5, galvanically connected with the top plane of silicon multiplexer 6.
The number of indium columns on each axis of not less than two. Matrix bottom electrode 3 diamond sensor on the X-axis and Y is twice step more than the matrix electrodes sensitive sites 5 silicon multiplexer 6. (Fig.3). bars, connecting the electrodes 3 diamond MFP with electrodes sensitive sites 5 silicon multiplexer, staggered matrix of electrodes 5 silicon multiplexer 6. So the bottom electrodes 3 sensitive elements of the diamond MFP galvanically connected with only the odd-or even-numbered sensitive areas 5 silicon multiplexer.
Sensitive pad 5 with the size of the bottom flat butt column 4 are based on CMOS (complementary logic transistors metal-oxide-semiconductor) technology ( M.A. Photodetecting device and the CCD. The detection of weak optical signals. - M.: Radio and Communication, 1992. - 400 C: Il.) and intended for input of an electrical signal in case if they are connected with the diamond MFP column, in the multiplexer 6, and detection of video on the open areas of the multiplexer.
Flat silicon multiplexer 6 strengthens, switching and signal processing, arriving at its sensitive pad 5, and generates an electrical signal on the information display system, it is made on the basis of CMOS technology ( M.A. Photodetecting device and the CCD. The detection of weak optical signals. - M: Radio and Communication, 1992. - 400 C: Il.).
GFS operates as follows (Figure 1). When applying to the electrode 1 7 radiation, its UV component is absorbed and calls on the sensing elements of the diamond FPM (1, 2, 3) photocurrent, which through columns 4 arrives at silicon multiplexer 6 and is detected as ultraviolet signal. Visible light 8, without absorption takes place in the intervals between the sensitive elements of the diamond FPM and gets on sensitive pad silicon multiplexer 5, where is absorbed and is detected as video.
These tasks, increase in service life at the expense of exception of hit hard UV radiation on the multiplexer and the possibility of registration of images simultaneously and in ultraviolet, visible and infrared range of the spectrum, are solved by matrix photodetector consists of diamond, which is a filter for hard UV radiation and has twice bigger step X-axis and Y than matrix silicon multiplexer that allows one hand not to get UV radiation on the multiplexer, and on the other hand pass through the diamond plate visible light and infrared radiation in the intervals between the bottom electrodes of the FPM.
The use of the proposed GFS FPM-based diamond allows one hand detect UV radiation, and on the other hand filter to protect the silicon multiplexer. Doubling step MFP, based on diamond and location of the sensors UV-radiation in a checkerboard pattern allows visible radiation to pass through the diamond MFP and free-sensitive sites 5 silicon multiplexer 6.
The principal difference of the proposed design is that on the one hand diamond FPM holds all the harsh UV radiation (UV radiation delays diamond and platinum partially transmit UV radiation, however, delays the IR radiation). On the other hand, the visible and infrared radiation easily passes through the FPM (through the Windows of the upper electrode (figure 4) and through the gaps between the bottom electrodes) and detected at free of sensitive sites 5 multiplexer. 6.
Upper electrode 1 diamond MFP is made by deposition of platinum thickness 0,00004 mm, has dimensions of 4.2 x 4,2 mm and the form in figure 3.
Diamond plate 2 from natural diamond type IIA and has a width and length equal to the size of the electrode 1, and the thickness is equal to 0,3 mm
Bottom electrodes 3 are made by deposition of gold 0.001 mm thick and have dimensions: 0,02 x 0,02 mm
columns 4 have dimensions: width 0,015 mm, length 0,015 mm and height 0,008 mm
Sensitive pad 5 silicon multiplexer have dimensions: width x length x thickness = 0,015 x 0,015 x 0.02 mm
Silicon multiplexer 6 has dimensions: 10,03 x 10,85 x 5 mm
Technical characteristics of the prototype of GFS.
Spectral sensitivity range, mkm
UV channel
0,19-0,23
Visible and IR channel
0,4-0,9Threshold sensitivity, W/Hz ½
UV channel
9·10 -12
Visible and IR channel
6·10 -10
The technical result of the invention reach - extended detectable range of radiation due to simultaneous registration of images in the ultraviolet, visible and infrared spectrum. Increase the lifetime of GFS at the expense of exception of hit hard UV radiation on the multiplexer.
Features of the invention
Matrix diamond sensor on the X-axis and Y is step two times more than step matrix silicon multiplexer, and bottom electrodes 3 sensitive elements of the diamond FPMs are staggered, in addition, the underlying electrodes 3 sensitive elements of the diamond FPM galvanically connected with only the odd-or even-numbered sensitive areas 5 silicon multiplexer 6.
Hybrid photosensitive circuit containing: diamond matrix photodetector (MFP), columns (4) and silicon multiplexer (6) sensitive areas (5), and part of the MFP includes: upper flat electrode (1), which is served offset voltage, diamond plate (2) and bottom electrodes (3) sensitive elements of the diamond FPM, which removed the signal, and the bottom electrodes (3) galvanically connected through columns (4) placed in the form of a rectangular matrix with X and Y axes of sensitive elements (5) silicon multiplexer (6), and the number of indium columns on each of the axes X and Y not less than two, wherein the matrix diamond sensor in X-and Y is step two times more than step matrix silicon multiplexer, and bottom electrodes (3) sensitive elements of the diamond FPMs are staggered, in addition, the underlying electrodes (3) sensitive elements of the diamond FPM galvanically connected with only the odd-or even-numbered sensitive areas (5) silicon multiplexer (6).