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High-frequency amplifier with collector current stabilising device. RU patent 2509407.

High-frequency amplifier with collector current stabilising device. RU patent 2509407.
IPC classes for russian patent High-frequency amplifier with collector current stabilising device. RU patent 2509407. (RU 2509407):

H03G3/30 - in amplifiers having semiconductor devices
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Cascode differential amplifier with controlled gain Cascode differential amplifier with controlled gain / 2388139
Invention relates to radio engineering and communication and can be used in automatic gain control devices, phase detectors and modulators, in phase-locked loop and frequency multiplication systems or as an amplifier whose voltage transfer ratio depends on the control signal level. The controlled amplifier is the basic block of modern systems for receiving and processing high-frequency and microwave signals, and analogue computer and measurement equipment. The cascode differential amplifier with controlled gain has an input voltage-to-current converter (1), having first (2) and second (3) inputs and first (4) and second (5) current inputs connected to emitters of the first (6) and second (7) output transistors, load elements (8) connected to collectors of the first (6) and second (7) output transistors, a bias voltage source (9) connected to the base of the first (6) and second (7) output transistors through the first (10) and second (9) antiphase sources of the amplified signal. A first additional capacitor (12) is connected between the emitter of the first (6) output transistor and the power supply bus, and collectors of the output transistors (6) and (7) are connected to each other and to the load element (8).

FIELD: radio engineering, communication.

SUBSTANCE: method is realised via summation of current of two control channels, one of which forms a component proportional to current of the reference transistor, and the other forms a component dependent on base-emitter voltage difference of the output and reference transistors. To this end, the device for stabilising collector current of the output transistor includes an additional second current mirror output and a differential amplifier with a low-pass filter.

EFFECT: gain stability and protection of the output transistor of the amplifier from overheating.

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The technical field

The invention relates to the field of radio engineering and electronics. In particular, integrated circuits based on mixed bipolar and CMOS (BiCMOS) technology.

The level of equipment

The problem of stabilization of static operation of the amplifier is that in real conditions of the heat power dissipated in the amplifying cascades, and the temperature of the output transistor depend on the operation mode. The operating temperature of transistors in a single monolithic chip may differ by 10-20 degrees. [1] In critical cases, the possible thermal breakdown power bipolar transistors. With the increase in temperature reduces the voltage base - emitter voltage and increases the gain of base current. In the temperature range gain current increases with increasing temperature, with the proportionality 0.3-0.5%/K. And voltage base - emitter voltage at a given current emitter is reduced by a factor of 2 mV/K [2].

In the known technical solutions (EN 2193272 C1 (2002), EN 60816 U1 (2006), EN 2421882 C1 (2011), EN 2419198 C1 (2011)the unit of stabilization of the collector current offset the change in voltage caused by changes in the average temperature of the crystal chip. The current change, caused by local heating of transistors, is not indemnified.

The closest technical solution is the power of high-frequency signals described in the patent of the Russian Federation 2116693 C1 (1996). The prototype includes a support cascade forming voltage base - emitter voltage, depending on the average temperature of the crystal; managing cascade that specifies the base current reference and output transistors;

cascade frequency correction, preventing the penetration of the input frequency signal of the reference cascade; output stage, the mode, which is determined by the structure of stabilization. Local change of voltage base - emitter voltage output transistor is compensated partly by limiting resistor, a gain change of power is not compensated. Stabilization collector current in the device prototype incomplete. Current increases with the ambient temperature and supply voltage. At the same time growing power consumption and temperature output transistor, reduced reliability of products.

Disclosure of the invention

The present invention is to provide stability of the gain and protection of the output transistor amplifier from overheating. The technical result, which allow to fulfill this task, is to reduce variations collector current output transistor when the operating temperature of the amplifier, load resistance and supply voltage.

According to the invention, the technical result is achieved due to the fact that high-frequency amplifier with device stabilization of the collector current (Fig.), including output stage (1) on the basis of the first bipolar transistor (2) common-emitter and reactive load (3)included between the collector of the first bipolar transistor (2) and bus is positive power (4), with the output of the amplifier (5) connected to the collector for the first bipolar transistor (2), and the input of the amplifier (6) through the first decoupling capacitor (7) is connected to the base of the first bipolar transistor (2), the unit of stabilization of the collector current (8) of the first bipolar transistor, including second anchor transistor (9)connected in series with (10) between grounded bus (11) and the bus of the positive supply (4), third transistor (12), connected to a database with header 2nd support transistor (9), the emitter to base the second calibration transistor (9), and collector with input «current mirrors» (13), the first output of which is connected to the base of the first bipolar transistor (2) and forms the main control channel forming component of the collector current of the first bipolar transistor (2), proportional to the current of (10), in the unit of stabilization of the collector current (8) have introduced the second exit «current mirrors» (13) and a differential amplifier (14), and the second output «current mirrors» (13) is connected with the joint the origins of the first (15) and the second (16) P-MOS transistor differential amplifier (14), the closures of the first (15) and second (16) P-MOS transistors through the first R1 (17) and the second R2 (18) resistors connected with the bases of the first (2) and 2 (9) of bipolar transistors, respectively, Stoke first P-MOS transistor (15) is connected to the base and collector fourth bipolar transistor (19) with grounded emitter, and the flow of the second P-MOS transistor (16) is connected to the base of the first bipolar transistor (2), and this connection is the second optional channel management, diminishing the second component of the collector current of the first bipolar transistor proportional to the temperature difference between the first and second bipolar transistors.

«Current mirror» (13) built on the third (20), fourth (21) and fifth (22) R-MOSFETs, and the origins of these transistors connected to the bus of the positive power supply (4), drain and gate of the third P-MOS transistor (20), the gates of the fourth (21) and fifth (22) P-MOS transistors connected with input «current mirrors» (13), and drains the fourth (21) and fifth (22) P-MOS transistors connected with the first and second outputs current mirrors», respectively.

And the gates of the first (15) and second (16) P-MOS transistors are connected via a capacitor (23), which together with resistors R1 (17) and R2 (18) form a low-pass filter that prevents signal modulation control input frequency signal.

(10) is made in the form of resistor R3 low temperature coefficient of resistance.

Brief description of drawings

The figure presents the diagram of high-frequency amplifier with a device stabilization of the collector current. Shows the output stage and the unit of stabilization of the collector current output bipolar transistor with «current mirror» and differential amplifier.

The implementation of the invention

High-frequency amplifier with device stabilization of the collector current (Fig.) includes output stage (1) on the basis of the first bipolar transistor (2) common-emitter and reactive load (3)included between the collector of the first bipolar transistor (2) and the bus of the positive supply (4), with the output of the amplifier (5) connected to the collector for the first bipolar transistor (2), and the input of the amplifier (6) through the first decoupling capacitor (7) is connected to the base of the first bipolar transistor (2); the unit of stabilization of the collector current (8) of the first bipolar transistor, including second anchor transistor (9)connected in series with (10) between grounded bus (11) and the bus of the positive supply (4); the third transistor (12), connected to a database with header 2nd support transistor (9), the emitter to base the second reference transistor (9), and collector with input «current mirrors» (13), the first output of which is connected with the base of the first bipolar transistor (2) and constitutes the main channel management, diminishing the second component of the collector current of the first bipolar transistor (2), proportional to the current of (10),

In the unit of stabilization of the collector current (8) inputs: the second exit «current mirrors» (13) and a differential amplifier (14), and the second output «current mirrors» (13) is connected with the joint the origins of the first (15) and second (16) P-MOS transistors differential amplifier (14), the closures of the first (15) and second (16) P-MOS transistors through the first R1 (17) and the second R2 (18) resistors connected with the bases of the first (2) and 2 (9) of bipolar transistors, respectively, Stoke first P-MOS transistor (15) is connected to the base and collector fourth bipolar transistor (19) with grounded emitter, and the flow of the second P-MOS transistor (16) is connected to the base of the first bipolar transistor (2), and this connection is the second optional control channel forming component of the collector current of the first bipolar transistor is proportional to the temperature difference between the first and second bipolar transistors.

«Current mirror» (13) implemented on the third (20), fourth (21) and fifth (22) R-MOSFETs, and the origins of these transistors connected to the bus of the positive power supply (4), drain and gate of the third P-MOS transistor (20), the gates of the fourth (21) and fifth (22) P-MOS transistors connected with input «current mirrors» (13), and drains the fourth (21) and fifth (22) P-MOS transistors connected with the first and second outputs current mirrors», respectively.

The gates of the first (15) and second (16) P-MOS transistors are connected via a capacitor (23), which together with resistors R1 (17) and R2 (18) form a low-pass filter that prevents signal modulation control input frequency signal.

(10) is made in the form of resistor R3 low temperature coefficient of resistance that contributes to the stabilization of the currents of reference and the output transistors.

The technical result, which is a stabilization of the collector current of the output of high-frequency transistor amplifier in the temperature of the crystal chip and local self-heating output transistor, is achieved by adding the currents of the two channels, one of which forms the first component is proportional to the current reference of the transistor, and the other - the second component, depending on the difference of voltage base - emitter voltage output, reference transistors.

Increase of the temperature of the output transistor is reduced voltage base - emitter voltage and decreases the second component of the current database, make up for thereby increasing the gain of the current.

The distinctive feature of the technical solution consists in dividing the reference voltage on two components: the first component takes into account working conditions, equal to the reference and the output transistors; the second part takes into account the temperature difference between the reference and the output transistors, reducing input current with increasing gain voltage amplifier transistor.

1. High-frequency amplifier with device stabilize the current collector, including the output stage is based on the first bipolar transistor common-emitter and reactive load is connected between the collector of the first bipolar transistor and the bus of the positive supply and the output of the amplifier is connected to the collector of the first transistor, and the amplifier's input through the first decoupling capacitor is connected in the first bipolar transistor, a unit of stabilization of the collector current of the first bipolar transistor, including second anchor transistor connected consistently with between grounded bus and the bus of the positive supply, the third transistor connected base manifold 2nd support transistor with the emitter to base the second reference of the transistor, and the collector with input «current mirrors», the first output of which is connected to the base of the first bipolar transistor and forming the main control channel forming component of the collector current of the first bipolar transistor, proportional to the current of , characterized in that the device stabilize the current collector, entered optional second output «current mirrors and a differential amplifier, and the second output «current mirrors» is connected with the joint the origins of the first and second P-MOS transistors differential amplifier, the gates of the first and second P-MOS transistors through the first R1 and second R2 resistors connected with the bases of the first and second bipolar transistors accordingly, the outflow of the first P-MOS transistor is connected to the base and collector fourth bipolar transistor with grounded emitter, and the flow of the second P-MOS transistor is connected to the base of the first bipolar transistor, and the connection is the second optional control channel, reducing the second component of the collector current of the first bipolar transistor is proportional to the temperature difference between the first and second bipolar transistors.

2. High-frequency amplifier with device stabilization of the collector current of claim 1, characterized in that «current mirror» is built on the third, fourth and fifth P-MOS transistors, and the origins of these transistors connected to the bus of the positive supply, drain and gate of the third P-MOS transistors, valves fourth and fifth P-MOS transistors connected with input «current mirrors», and drains the fourth and fifth P-MOS transistors connected with the first and second outputs current mirrors», respectively.

3. High-frequency amplifier with device stabilization of the collector current of claim 1, characterized in that the gates of the first and second P-MOS transistors connected via a capacitor, which together with the resistors R1 and R2 form a low-pass filter that prevents signal modulation control input frequency signal.

4. High-frequency amplifier with device stabilization of the collector current of claim 1, characterized in that made in the form of resistor R3 low temperature coefficient of resistance.

 

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