Power converter device and method of device control. RU patent 2509405.

FIELD: electricity.

SUBSTANCE: power converter device is made so that its arm comprises two groups of semiconductor devices connected in series. Each group of semiconductor devices comprises a switching element and semiconductor element, different from the switching element, connected in parallel. The connection point, to which groups of semiconductor devices are connected in series, is an outlet AC lead. Both ends of the arm are DC leads. Besides, the power converter device comprises also a current sensor, a module of voltage control command generation, a module to calculate voltage drop and a module of switch control.

EFFECT: increased accuracy of output voltage generation due to compensation of voltage drop in semiconductor elements.

16 cl, 24 dwg

2420-185840RU/071

The technical field to which the invention relates

This invention relates to a device power Converter, which converts the DC power into AC power, in particular, refers to the device actuating motor with variable speed and device power Converter, which is connected with the system.

The level of equipment

In many cases, the drive power Converter has the following configuration. That is, the device power Converter contains two groups of semiconductor devices containing switching component and the free-wheeling diode, while switching component and the free-wheeling diode connected in parallel. These two groups of semiconductor devices connected in series, a DC voltage is applied to both ends of the groups of semiconductor devices, and output terminals are available in the connection point between groups of semiconductor devices. In the above device power Converter when switching component upper branches is enabled, a positive DC voltage is displayed on the output terminals, and when the switching element is a lower branch is in the enabled state, negative DC voltage is displayed on the output terminals. Therefore, switching on/off switching element is managed to ask the average output voltage of a single switching period is equal to the command control voltage. Ideally, the average output voltage of a single switching period is equal to the command control voltage. When IGBT-transistor (bipolar transistor with insulated gate) is used as a switching element, the current flows or in the switching element, or in the free-wheeling diode under the direction of the current. In the above device power Converter voltage drop (switching voltage) is formed in a switching element, therefore the output voltage according to the value of the control commands cannot be obtained. In the patent document 1 way to get the output voltage according to the value of the control commands, specified as follows. That is, to compensate the voltage drop, the current sensor is available in the upper branches and lower branches, respectively, and current, which flows in every branch is determined that current flows in a switching element, or in the free-wheeling diode in order to compensate for each voltage drop.

On the other hand, provided for a power Converter that performs synchronous rectification, which MOSFET (MOS field-effect transistor) is used as a switching element, and the current division between the switching element and the free-wheeling diode is used in order to reduce losses. (For example, a patent document 2.)

The list of reference materials of prior art

Patent documents

Patent document 1. National publication of the international patent application WO 02/084855

Patent document 2.

Japanese publication of the patent application number 2008-61403

Disclosure of the invention

Problem solved by the invention

In the device power Converter with synchronous rectification, the disclosed through the patent document 2, in some cases, the talk is divided so that it occurs in a switching element and in the free-wheeling diode. Therefore, unlike the patent document 1 voltage loss cannot be compensated by determining that the current flows in a switching element, or in the free-wheeling diode.

In this case, this invention is directed to provide the Converter power, in which the current is divided so that it occurs in several semiconductor elements, the voltage drop in the semiconductor elements can be compensated and voltage output with high accuracy can be obtained.

Means of resolving problems

The Converter power, which is done so that the shoulder, containing two groups of semiconductor devices that are connected in series, and a group of semiconductor devices contains a switching element and semiconductor devices other than switching element, connected in parallel, the connecting point to which the group's semiconductor devices are connected in series is output contact output AC, and both ends of the shoulders is contact conclusions DC and a current division is formed in the current that flows in a group of semiconductor devices between elements in the group of semiconductor devices and provides the current sensor, which determines the current that flows in a group of semiconductor devices, the module of formation of management teams voltage, which computes the value of the command-control voltage, which should show up, evaluation module voltage drop, which calculates the voltage drop groups of semiconductor devices through the use of current value, which is determined by the current sensor, and characteristics of the voltage drop, includes a description of the division of semiconductor devices, and module switching control, which adjusts the value of the command-control voltage, which is created by means of the module of formation of management teams voltage through the use of a voltage drop, which is calculated by evaluation module voltage drop to control on/off switching element.

The advantage of the invention

In the device power Converter in which the current is divided so that it flows in many semiconductor elements, voltage mismatch, which is formed between the management team voltage and output voltage and is caused by the voltage drop in semiconductor device, compensated, and the output voltage with high accuracy can be obtained.

Brief description of drawings

Figure 1 is a schematic diagram that shows an example configuration of power supply which to apply the device power Converter according option 1 the implementation of the present invention;

Figure 2 is a schematic diagram showing the main scheme (shoulder) device power Converter under option 1 the implementation of the present invention;

Figure 3 is a block diagram showing the management module and device power Converter under option 1 the implementation of the present invention;

Figure 4 is a precedence diagram showing the unit Converter power under option 1 the implementation of the present invention;

Figure 5 is a schematic explaining the variation of the calculation period V_on and correction period, in which the value of the command-control voltage is adjusted through the use values V_on under option 1 the implementation of the present invention;

6 is a diagram explaining the operation of each device status Converter power under option 1 the implementation of the present invention;

Fig.7 is a diagram showing the characteristics of the voltage drop, which includes the characteristic of the current group division of semiconductor devices under option 1 the implementation of the present invention;

Fig is a sequence diagram operations, explaining the operation of the device power Converter under option 2 the implementation of the present invention;

Figure 9 is a diagram showing the example of the characteristics of the voltage drop, which includes the characteristic of the current group division of semiconductor devices in dead time under option 2 the implementation of the present invention;

Figure 10 is a schematic diagram showing the main scheme (shoulder) device power Converter according to option 3 implementation of the present invention;

11 is a block diagram showing the management module device Converter power under option 3 implementation of the present invention;

Fig is a schematic diagram showing the main scheme (shoulder) device power Converter under option 4 the implementation of the present invention;

Fig is a diagram showing the example of the characteristics of the voltage drop, including the characteristic of separate groups of semiconductor devices under option 4 the implementation of the present invention;

Fig is a schematic diagram showing the main scheme (shoulder) of the other device power Converter according option 4 the implementation of the present invention;

Fig is a schematic diagram showing the main scheme (shoulder) device power Converter under option 5 implementation of the present invention;

Fig is a diagram showing the example of the characteristics of the voltage drop, which includes the characteristic of the current group division of semiconductor devices under option 5 implementation of the present invention;

Fig is a concept that shows another example configuration the power unit which to apply the device power Converter according to the present invention; and

Fig is a block diagram showing the control module in case the Converter power of the present invention is applied to the power supply, shown in Fig.

Detailed description of embodiments of the invention

Option 1 implementation

Figure 1 is a diagram showing the scheme of power supply which to apply the present invention. Figure 1 is a schematic diagram if the Converter power of the present invention is applied to the device actuating motor with variable speed as an example of the power supply. The power supply is divided broadly Converter 1 on the input side and a Converter 2 on the output side, and a Converter 1 on the input side and a Converter 2 on the output side, usually connect to site 10 DC. Converter 1 on the input side, mainly consists of a diode rectifier 3 and 4 reactor AC and connects to the system power supply. Diode rectifier consists of 3 p-i-n diodes, rated voltage higher DC voltage, or of diodes of Schottky, and a diode rectifier 3 converts the AC voltage to DC voltage.

On the other hand, as a Converter 2 on the output side, the group of semiconductors, containing switching component and the free-wheeling diode, which is a semiconductor element, other than switching element, connected in parallel, used, and several shoulders 21, which are groups of semiconductor devices connected in series are used depending on the required number of phases output. Both ends of each shoulder 21 are connected together to host 10 DC, in the middle point of the shoulder 21, that is, in the connection point of the group of semiconductor devices is output contact output AC, which is connected to the motor 8. In the case of actuation three-phase motor are only three shoulder 21 are used six groups of semiconductor devices. Additionally, the module 22 that controls the motor 8, available, and module 22 management at the end controls on/off switching elements in groups of semiconductor devices. Additionally, in the present invention Converter 2 on the output side is the device power Converter, which is the purpose of the invention.

Figure 2 is a diagram of single-phase part shoulder 21 focuses describing the details of the Converter 2 on the output side. Converter 2 on the output side contains the modulus 21 main schema, which is the shoulder, and module 22 management. In module 21 main circuit when the upper branch is illustrated as an example, one set of groups 25a semiconductor devices includes switching component 23a and diode 24a free play and switching component 23a and diode 24a freewheel are connected in parallel. Option 1 exercise switching component 23a is one or more MOSFET transistors, diode 24a free running is a parasitic diode MOSFET transistor. Consequently, the group 25a semiconductor devices contains MOSFET 23a and parasitic diode 24a MOSFET transistor. Figure 2 shows an example with only one MOSFET, however, if the current is large, many MOSFET transistors can connect in parallel, if the voltage is high, many MOSFET transistors can be connected in series, and they both can be used simultaneously. The group 25b semiconductor devices configured in a way similar group 25a semiconductor devices. Reference number 26 indicates the current sensor and is used to determine the direction and value of the output current, for example, the current sensor that uses hole sensor, etc. can be used.

On the other hand, the ultimate goal of the module 22 management is to manage torque or speed etc. of the motor that is connected to the output of contact conclusion. To achieve the ultimate objective, the module 22 control on/off switching item 23a and 23b and manages medium voltage output voltage V_out in the switching period.

For a detailed description of the module 22 management figure 3 shows a block diagram of the module 22 management. Module 22 management mainly contains the module of 31 formation voltage control, which computes the value of the command-control voltage to control motor speed and torque, the module 32 calculation, voltage drop, which calculates the voltage drop groups of semiconductor devices and module 33 switching control. Module 31 formation of management teams voltage can easily configure command V_refl voltage control through the use of well-known technologies, including vector control and management on the basis of the V/f are constants, which is typically used. For example, if the electric motor, having a nominal speed of 1,800 rpm, rated frequency of 60 Hz and rated voltage (mains voltage) 200, operate when the motor is controlled so that has 900 rpm, which is half the nominal speed of rotation, through the use of management on the basis of V/f a constant at 30 Hz, voltage, which is set through a transformation phase voltage 100V, which is half of the nominal voltage is provided as a command V_refl voltage control.

In module 33 control switching on/off switching element is determined to instruct the team V_refl control voltage, which is the same for medium voltage output voltage in the half-time of switching. In General, in many cases, the PWM control operates as a control, in the case of PWM control the way in which the space vector is used or the method of comparison on the basis of the triangular bearing is used, here is a way to compare on the basis of the triangular bearing, as shown in figure 4, is described as an example.

Mid-point of the site DC is conceived as a support capacity valid phase voltage, and the voltage is specified as ±Vdc (voltage between both ends of the shoulder is 2Vdc). The maximum value and a minimum value of triangular carrier, shown in figure 4, is +1 and -1, respectively. Standardization is done by separating the commands V_ref voltage control, which is provided in module 33 switching control, on Vdc to calculate the signal V_ref/Vdc values command. Signal V_ref/Vdc values of the control commands that are standardised and triangular carrier compares when the signal of the control commands exceeds triangular carrier switching component upper branches is in the enabled state, and switching element lower branches is in a disconnected state. On the contrary, when the signal of the control commands less triangular carrier, switching component upper branches is in a disconnected state and switching element lower branches is in the enabled state. Through the implementation of management as mentioned above, ideally, the average value V_out output voltage half-period Tsw switch equals team V_ref voltage control.

However, the 31 formation voltage control, the value V_refl command control voltage are determined without considering the voltage drop, which is formed in the group of semiconductor devices. Therefore, if the module 33 switching control determines the time of the on/off switching element through the use V_refl1 actual output voltage V_out obtained by subtracting the magnitude of the fall V_on voltage in the group of semiconductor devices from the team V_refl voltage control, i.e. V_out=V_refl-V_on.

Then the fall V_on voltage in the group of semiconductor devices, which is formed in a certain period of switching, corrected in the next half-cycle of the switch, and V_ref is provided as V_refl+V_on in module 33 switching control. Module 32 calculate voltage drop calculates V_on. Additionally, the frequency of triangular carrier is for example 10 kHz, i.e. the switching period is 100 MS, and the half-time of switching, which is indicated by the Tsw in figure 4, is 50 MS. Therefore, if the calculation is done at the wrong time, even if the correction is performed in the following half-time of switching after the next, or further in the next half-cycle of the switching accuracy is not going down.

Additionally, here the downfall V_on voltage group of semiconductor devices, which is formed in a certain period of switching, corrected in the next, or the next after the next half-cycle of the switch, however, is not always necessary to perform the calculation and correction of the voltage drop in unit time, but you can perform the calculation and correction of the voltage drop in the unit integer multiple of half-cycle. Figure 5 shows the variation of the period of calculation of V_on and correction period, when the value of the command-control voltage is adjusted through the use values V_on. Figure 5(a) shows an example in which the correction is performed directly in the next half-cycle of the switch through the use V_on, which is calculated in a certain half-cycle of the switch, as described above. Figure 5(b) shows the case in which the correction is performed in the half-time of switching after the next half-cycle using V_on, which is calculated in a certain half-time of switching. Figure 5(c) shows an example in which the correction is performed directly in the next one period toggle through the use V_on, which is computed in one particular period of switching. Figure 5(d) shows an example in which the correction is performed directly in the next half-cycle of the switch through the use V_on, which is computed in one particular period of switching. 5(e) shows an example in which the correction is performed directly in the next one period toggle through the use V_on, which is calculated in a certain half-time of switching.

That is when switching voltage in the nth period of half-time of switching (n is a positive integer), which includes half-life, one period, half-a-half and two switching period, etc. are adjusted in the m-th period of the next half-switch (m is a positive integer), which includes the next half-cycle of the switch, the next one period, following a half of the period and the following two periods etc., accuracy is not going down.

If the calculation is not timely correction is not required to perform directly in the following m-th period of half-time of switching, the correction can be made in m-th period of half-time of switching after the next half-cycle or after the next one period.

6 is the diagram for a description of one phase of the shoulder, containing a MOSFET transistor and diode MOSFET transistor, and path of output current, and a diagram of the signal current output current I_out and current that flows in a group of semiconductor devices in each branch. Figure 6, for example, if the output current is positive and MOSFET upper branches is in the enabled state (the state shown in (a), the output current takes place only in MOSFET-transistor upper branches. On the other hand, if the output current is positive and MOSFET lower branches is in the enabled state (the state shown in (b)), output current flows in MOSFET-transistor lower branches and the free-wheeling diode, connected in parallel to the MOSFET-transistor lower branches (so called current division). If the output current is negative, the state is the reverse. (State is shown in (c) or (d).) Additionally, as shown in Fig.6, the form of a current signal of each group of semiconductor devices is the signal form, in which the alternating current flows in the upper group elements and the bottom group of elements. The fall V_on voltage, which is formed in the group of semiconductor devices, depending on the characteristics of the current separation. Module 32 calculation, voltage drop, shown in figure 3, calculates the above voltage drop, which is formed in the group of semiconductor devices.

Fig.7 shows an example of the characteristics of the voltage-current (thick solid line = function Fvon())MOSFET transistor, parasitic diode MOSFET transistor and semiconductor group of devices containing MOSFET and parasitic diode MOSFET transistor, which are connected in parallel at a certain temperature. 7 if the reverse current of a group of semiconductor devices, which is in the enabled state (=Id_up or Id_low), is I_l or less, the current flows only in MOSFET-transistor, therefore, demonstrates a linear characteristic. On the other hand, when the reverse current of a group of semiconductor devices, which is in the enabled state, exceeds I_l, parasitic diode MOSFET transistor is conductive, the current division is formed in MOSFET-transistor and parasitic diode MOSFET transistor demonstrates characteristic, namely the increase of the voltage drop relative to the current suppressed.

and when Id>=I_1, Fvon(Id)=B*Id+C . (3)

The constant A, B and C shall be determined according semiconductor device that should be used.

As mentioned above, the module 32 calculate voltage drop calculates the fall V_on voltage, which is formed in the group of semiconductor devices through the use of output current I_out, which is defined data to the time of each of the switching element in the half-time of switching, which are taken from the module 33 switching control, and functions Fvon(). The calculated drop V_on voltage is added to the command V_refl control voltage, which is formed in the module 31 formation voltage control, in order to calculate the command V_ref voltage control. The team V_ref control voltage is entered in the module 33 switching control to control on/off switching element of the group of semiconductor devices in the next half-time of switching.

Through the implementation of the above voltage drop, which is formed in MOSFET-transistor and parasitic diode MOSFET transistor could be compensated. Therefore, the output voltage with high accuracy can be obtained. Additionally, the device is operating the motor at low speed and high torque, i.e. in the state in which the output voltage is low and the current is large, voltage drop, which is formed in the group of semiconductor devices is relatively large. Therefore, when the voltage drop is not compensated, is formed oscillation of torque. However, according to the present invention oscillation of torque can be reduced.

Additionally, in the above description of the use of semiconductor devices at a certain constant temperature Pets, however, characterization of semiconductor device is changed according to the temperature. Therefore, under conditions where the temperature semiconductor devices vary greatly, temperature sensor, which determines the temperature of the group of semiconductor devices or the temperature of each semiconductor devices attached to calculate the voltage drop, which is formed in the group of semiconductor devices through the use of features, i.e. features Fvon(), groups of semiconductor devices at a certain temperature. Through the implementation of the above accuracy can be further enhanced.

As described above, through devices Converter power under option 1 the implementation of the present invention, even if the current division is formed in the group 25a and 25b semiconductor devices, correction voltage can be performed with high accuracy. Additionally, unlike a patent document 1, without providing the current sensor, which determines the value of current and direction of the current in the upper branches and lower branches, respectively, through the use of sensor only 26 of the current, which determines the output current by using the current value, which is determined by a sensor 26 current and the time enable switching elements that feature in the upper branches and lower branches, the voltage drop can be calculated, therefore, the device's configuration power Converter is the easiest.

Option 2 implementation

Fig is a precedence diagram showing the unit Converter power under option 2 the implementation of the present invention. In option 1, the implementation of the case in which the period of time when both of the upper switching element and the bottom of the switching element at the same time is in a disabled state (dead time), is extremely small and negligible, Pets, however, if there is an impact of dead time, which is to protect groups of semiconductor devices when the current path during the dead time and the voltage drop in the group's semiconductor devices are included, the value of the voltage drop, which is formed during the dead time can be adjusted. Therefore, the output voltage with a higher accuracy can be obtained.

As shown in Fig, dead time Td (period which is indicated by a diagonal line) is provided through the formation of the time differences between the rise time when turning on power MOSFET transistor and rise time when turning off the power MOSFET transistor to prevent a short circuit in order to protect the group of semiconductor devices. During the period Td MOSFET is in a disconnected state; therefore, the voltage drop over a period of Td is formed only in the diode. Therefore, if the Td is great, the error is formed between the voltage drop, which is formed during the period Td, and the quantity adjustment of the voltage drop, which is calculated assuming that current flows in MOSFET-transistor by ignoring period Td. In this case, the compensation value of the voltage drop is obtained by examining the characteristics of the group of semiconductor devices during Td, as shown in figure 9, there are no current flows in MOSFET-transistor during the period Td.

Specifically, the compensation value of the voltage drop is obtained as follows. Fig.9 shows the characteristic group of semiconductor devices during Td, i.e. the function Fvon_td(). When the current I_out is positive current flows in the diode lower branches, and when the current I_out is negative; the current flows in the diode upper branches. Additionally in case of more than two diodes connected in parallel, for example, in case if the diode Schottky in addition to the parasitic diode MOSFET transistors connected in parallel, which is described in the version 4 implementation below, for example, when the output current is I_l or less, the current flows only in the diode Schottky, when the output current is I_l or above the current also flows in a parasitic diode MOSFET transistor, therefore, formed the current split. Feature, in which the above is taken into account is the characteristic Fvon_td() group of semiconductor devices during Td, shown in figure 9. Then, through the use of functions Fvon_td() and characteristics Fvon() group of semiconductor devices in a period that is different from Td period, the average value of the voltage drop in the half-time of switching obtained using equation (5):

V_on=Fvon_td (I_out)*(Td Tsw)

-von(Id_up=-I_out)*(Ton_up Tsw)

+Fvon(Id_low=I_out)*(Ton_low Tsw).

Therefore, as mentioned above, can be obtained correction value V_on.

Option 3 implementation

Figure 10 is a diagram showing the main scheme (shoulder) device power Converter according to option 3 implementation of the present invention. Option 1 exercise sensor 26 current is provided in order to determine the output current I_out, however, option 2 implementation, as shown in figure 10, the sensor 29a current and sensor 29b current feature so that they directly determine the current Id_up, which flows in a group of semiconductor devices upper branches 25a, and current Id_low, which flows in a group of semiconductor devices, lower branches 25b, respectively. In General, when the output current is I_out=-Id_up+Id_low, Id_up or Id_low zero depending on the switching condition, however, if the leakage current when the MOSFET is in a disconnected state, is not negligible, the accuracy can be improved through the use of sensors 29a and 29b current, as shown in figure 10.

In this case, the value of current that flows in the upper branches and lower branches, current Id_up and current Id_low can be defined separately. Here to get V_on, not output current I_out and current Id_up and current Id_low, which are used. Certain current Id_up and Id_low has a current value, which are weighted according to the respective attitude times inclusion. Therefore, unlike the equation (1), not required to use the appropriate attitude times inclusion, by using the equation V_on=-Fvon(Id_up)+Fvon(Id_low) (4), the mean value V_on can be obtained. Therefore, this module 32 calculation of voltage drop in module 22 management in version 3 implementation, as shown in figure 11, need not provide information regarding inclusion of module 33 switching control.

As described above, the device power Converter in version 3 implementation, even if the current division is formed in the group 25a semiconductor devices and 25b, correction voltage, high accuracy can be made. Additionally, unlike a patent document 1, without a clear understanding of current flows in a switching element, or in the free-wheeling diode top of each branch and each lower branches, the voltage can be calculated using the current value, which is determined by a sensor 29a and 29b current. Therefore, the device's configuration power Converter can be simple.

Option 4 implementation

Fig is a diagram showing the main scheme (shoulder) device power Converter under option 4 the implementation of the present invention. The basic configuration is identical to the configuration shown in figure 1 and figure 3. In the version 4 implementation, unlike figure 2 option 1 implementation, as shown in Fig, when the upper branch is treated as an example, the diode 63a of Schottky connected in parallel as free-wheeling diode MOSFET to-transistor 61a switching element of the Converter 2 on the output side. Also in this case, the parasitic diode 62a MOSFET transistors contained in the structure MOSFET transistor; therefore, a parasitic diode 62a also acts as a free-wheeling diode. Therefore, one set of groups 64a semiconductor devices contains MOSFET 61a, diode 63a of Schottky and parasitic diode 62a MOSFET transistor. In the lower branches of a single set of groups 64b semiconductor devices has the configuration identical configuration group 64a semiconductor devices. According to the above group configuration semiconductor devices operating characteristics parasitic diode MOSFET transistor are not good; therefore, the group of semiconductor devices with the above configuration, is often used to promote the use of operational characteristics of the diode Schottky as free-wheeling diode.

In the above configuration groups of semiconductor devices the current path of separation, three directions. Therefore, the module configuration 22 management is identical to the configuration shown in figure 3, however, the following description is provided in the module 32 calculation of voltage drop in figure 3.

Fig shows an example of the characteristics of the voltage-current MOSFET transistor, diode of Schottky, parasitic diode MOSFET transistor and semiconductor group of devices containing MOSFET, the diode Schottky and parasitic diode MOSFET transistor, which are connected in parallel at a certain temperature. On Fig if the reverse current of a group of semiconductor devices, which is in the enabled state (=Id_up or Id_low), is I_l or less, the current flows only in MOSFET, therefore, demonstrates a linear characteristic. On the other hand, if the reverse current of a group of semiconductor devices, which is in the enabled state, exceeds I_l, the diode Schottky is electrically conductive, the current division is formed in MOSFET-transistor and the barrier of Schottky and demonstrates characteristic, namely the increase of the voltage drop relative to the current suppressed. Additionally, if the reverse current of a group of semiconductor devices, which is in the enabled state, exceeds I_2, parasitic diode MOSFET transistor is conductive, the current division is formed in MOSFET-transistor, diode of Schottky and parasitic diode MOSFET transistor and demonstrates characteristic, namely the increase of the voltage drop relative to the current additionally suppressed.

In module 32 calculation of voltage drop in figure 3, which calculates the voltage drop in the group of semiconductor devices feature Fvon(), shown in Fig, is included as a table, as a mathematical equation, or as both of them, and drop V_on voltage in the group of semiconductor devices is displayed. In conclusion V_on is added so that it corrects the team V_refl voltage control, and V_ref which is the final team will be retrieved. Based V_ref module 33 switching control performs control on/off switching element of the group of semiconductor devices.

On Fig example, where the current flows in order MOSFET transistor, diode of Schottky and parasitic diode MOSFET transistor relative increase of the reverse current, however, the order is not limited to the above, and provided some cases in which the procedure differs depending on individual characteristics.

As mentioned above, even if the diode Schottky used as free-wheeling diode, according to option 4 implementation, voltage drop, which is formed in MOSFET-transistor, diode of Schottky and parasitic diode MOSFET transistor is adjusted. Therefore, the output voltage with high accuracy can be obtained, and the oscillation of the torque can be reduced.

In the above description of the MOSFET, a parasitic diode MOSFET transistor and diode of Schottky are used in the group of semiconductor devices, however, when the p-i-n diode diode is used instead of Schottky through consideration of the characteristics of p-i-n diode similarly characteristic shown in Fig, the same effect can be obtained.

When there is an impact of dead time, as described in option 2, the implementation, by the inclusion of the characteristics of the path of the current and the voltage drop in the group of semiconductor devices, the value of the voltage drop, which is formed in the dead time can be adjusted. Therefore, the output voltage with a higher accuracy can be obtained in the version 4 implementation.

Additionally, as described in option 1 exercise, under conditions where the temperature semiconductor devices vary greatly, temperature sensor, which determines the temperature of the group of semiconductor devices or the temperature of each semiconductor devices attached to calculate the voltage drop, which is formed in the group of semiconductor devices by using the characteristics of the group of semiconductor devices, i.e. functions Fvon(), at a certain temperature. Through the implementation of the above accuracy can be further enhanced.

Option 5 implementation

Fig is a diagram showing the main scheme (shoulder) device power Converter under option 5 implementation of the present invention. In the version 4 implementation sensor 26 current is provided in order to determine the output current I_out or Id_up, Id_low each upper branches or bottom of each branch, however, in version 5 implementation, as shown in Fig to directly determine the current which flows in every semiconductor device, including MOSFET transistors that make up a group 64a and 64b semiconductor devices, and the free-wheeling diodes, feature sensors 68a and 68b current, which determine the absolute magnitude and direction of the current Im, which runs in MOSFET-transistors and 61a 61b, which are switching functions, and parasitic diodes 62a and 62b MOSFET transistors, sensors 69a and 69b of the current, which determine the absolute magnitude and direction of the current Is diodes 63a and 63b of Schottky.

Calculating value correction voltage drop in this case is described with reference to Fig. Discusses the upper branch. Sensor 68a current defines the current Im_up, which flows in a group of semiconductor devices, including MOSFET 61a and parasitic diode 62a MOSFET transistor. Hence, by means of the current, which is detected by a sensor 68a current, voltage drop, which is formed in the group of semiconductor devices, including MOSFET 61a and parasitic diode 62a MOSFET transistor is by characteristics Fvon_m() group of semiconductor devices, including MOSFET and parasitic diode indicated by the solid line on Fig. Additionally, the sensor 69a current defines the current Is_up, which runs in the diode 63a of Schottky. Hence, by means of the current, which is detected by a sensor 69a current, voltage drop, which is formed in the diode 63a of Schottky is by characteristics Fvon_s() of the diode Schottky indicated by the solid line on Fig.

As you can see in Fig, when the total current Id_up upper branches is I_l or less, the current separation, which flows in the diode 63a of Schottky, not formed and the current, which is detected by a sensor 69a current of zero. At this time Im_up is I_l or less, and fall Von_up voltage is obtained using the current values Im_up, which is detected by a sensor 68a current, and Fvon_m(), shown in Fig. When Id_up is I_l or above the current separation, which flows in the diode 63a of Schottky, is formed. At this time, the current separation, which flows in the diode 63a of Schottky, is designed to set the voltage drop across the diode 63a of Schottky and the voltage drop, which is formed in the group of semiconductors MOSFET transistor 61a and parasitic diode 62a, the same. When the current Im_up, which flows in a group of semiconductor devices, including MOSFET 61a and parasitic diode 62a, is I_2 and current Is_up, which runs in the diode 63a of Schottky, is I_3, as shown by the fall V_l voltage Fig, they both form identical to the fall V_l voltage. As mentioned above, the current division is formed in such a way that Id_up=I_2+I_3. At this time the voltage drop in the group 64a semiconductor devices upper branches containing MOSFET 61a, parasitic diode 62a MOSFET transistor and diode 63a of Schottky, may be obtained through Fvon_m() with the value Im_up, which is detected by a sensor 68a DC, may also be obtained through the Fvon_s() with the value Is_up, which is detected by a sensor 69a current. The values of the voltage drop, which are obtained through the above-mentioned cases are the same.

For example, if feature a parasitic diode MOSFET transistor cannot accurately be expressed through the function or table, when the current is I_l or less the function Fvon_m() characteristics MOSFET transistor adapts, and when the current is I_l or higher, adaptable function Fvon_s() of the diode Schottky. By executing the above, switching voltage can be adjusted with a higher accuracy than in the case described in the version 4 implementation.

Option 6 implementation

Fig is a diagram showing the main scheme (shoulder) device power Converter under option 6 implementation of the present invention. The basic configuration is identical to the configuration shown in figure 1 and figure 3. Option 6 implementation, unlike figure 2 option 1 implementation, as shown in Fig, when the upper branch is treated as an example, the diode 93a of Schottky and p-i-n diode 94a are connected in parallel as free-wheeling diode MOSFET to-transistor 91a switching element of the Converter 2 on the output side. Also in this case, the parasitic diode 92a MOSFET transistors contained in the structure MOSFET transistor; therefore, a parasitic diode 92a also acts as a free-wheeling diode. Therefore, one set of groups 95a semiconductor devices contains MOSFET 91a, diode 93a of Schottky, p-i-n diode 94a and parasitic diode 92a MOSFET transistor. In the lower branches of a single set of groups 95b semiconductor devices has the configuration identical configuration group 95a of semiconductor devices.

According to the above group configuration semiconductor devices operating characteristics parasitic diode MOSFET transistor are not good, so set where p-i-n diode is already connected, used, and in case if the diode Schottky used to further improve performance, often used by the band semiconductor devices with the above configuration. In the above configuration groups of semiconductor devices the current path of separation has four pillars. Therefore, the module configuration 22 management is identical configuration option 1 implementation, however, the following description is provided in the module 32 calculation, voltage drop, which calculates the voltage drop in the group of semiconductor devices, shown in figure 3.

Fig shows an example of the characteristics of the voltage-current MOSFET transistor, diode of Schottky, p-i-n diode parasitic diode MOSFET transistor and semiconductor group of devices containing MOSFET, the diode Schottky and parasitic diode MOSFET transistor, which are connected in parallel at a certain temperature. On Fig if the reverse current of a group of semiconductor devices, which is in the enabled state (=Id_up or Id_low), is I_l or less, the current flows only in MOSFET-transistor, therefore, demonstrates a linear characteristic. On the other hand, if the reverse current of a group of semiconductor devices, which is in the enabled state, exceeds I_l, the diode Schottky is electrically conductive, the current division is formed in MOSFET-transistor and diode of Schottky and demonstrates characteristic, namely the increase of the voltage drop relative to the current suppressed. Additionally, if the reverse current of a group of semiconductor devices, which is in the enabled state, exceeds I_2, p-i-n diode is electrically conductive, the current division is formed in MOSFET-transistor, diode of Schottky and p-i-n diode and demonstrates characteristic, namely the increase of the voltage drop relative to the current additionally suppressed. Additionally, if the reverse current of a group of semiconductor devices, which is in the enabled state, exceeds I_3, parasitic diode MOSFET transistor is conductive, the current division is formed in MOSFET-transistor, diode of Schottky, p-i-n diode and parasitic diode MOSFET transistor and demonstrates characteristic, namely the increase of the voltage drop relative to the current additionally suppressed.

In module 32 calculate voltage drop Fig.3. the characteristic shown in Fig, is included as a table, as a mathematical equation, or as both of them and drop V_on voltage in the group of semiconductor devices is displayed. In conclusion V_on is added so that it corrects the team V_refl voltage control, and V_ref which is the final team will be retrieved. Based V_ref module 33 switching control performs control on/off switching element of the group of semiconductor devices.

On Fig example, where the current flows in order MOSFET transistor, diode of Schottky, p-i-n diode and parasitic diode MOSFET transistor relative increase of the reverse current, however, the order is not limited to the above, and provided some cases in which the procedure differs depending on individual characteristics.

As mentioned above, even if the diode Schottky and p-i-n diodes are used as free-wheeling diode under option 6 implementation, voltage drop, which is formed in MOSFET-transistor, diode of Schottky and parasitic diode MOSFET transistor is adjusted. Therefore, the output voltage with high accuracy can be obtained, and the oscillation of the torque can be reduced.

Additionally, as described in version 5 implementation, as shown in Fig to directly determine the current which flows in every semiconductor device, including MOSFET transistor and diode free play, make up a group of semiconductor devices, sensors 107a and 107b current, which determine the absolute magnitude and direction of the currents that flow in MOSFET-transistors 91a and 91b as switching elements and parasitic diodes 92a and 92b MOSFET transistors, sensors 108a and 108b current, which determine the absolute the magnitude and direction of currents diodes 93a and 93b of Schottky, and sensors 109a and 109b current, which determine the absolute magnitude and direction of the currents of p-i-n diodes 94a and 94b, can be connected. In this case, when the voltage is calculated by focus features are separated only current that flows in a MOSFET-transistor and parasitic diode MOSFET transistor, so the accuracy of correction may be raised.

Additionally, as described in option 1 exercise, under conditions where the temperature semiconductor devices vary greatly, temperature sensor, which determines the temperature of the group of semiconductor devices or the temperature of each semiconductor devices attached to calculate the voltage drop, which is formed in the group of semiconductor devices by using the characteristics of the group of semiconductor devices at a certain temperature, i.e. functions Fvon(). Through the implementation of the above accuracy can be further enhanced.

Additionally, options 1-6 implementation using MOSFET transistor is used as a switching element is allowed; however, when JFET-transistor (FET transistor with p-n-junction) is used as a switching element, the current division is formed between the free-wheeling diode in a similar way, so the effect on the identical level level options 1-6 implementation, can be obtained.

Option 7 implementation

Fig is a diagram showing the main scheme (shoulder) device power Converter according to option 7 of the implementation of the present invention. The basic configuration is identical to the configuration shown in figure 1 and figure 3. Option 7 implementation, as shown in Fig, when the upper branch is treated as an example, IGBT-transistor 81a is used as a switching element of the Converter 2 on the output side, the p-i-n diode 82a and diode 83a of Schottky used as free-wheeling diodes, and IGBT-transistor 81a, p-i-n diode 82a, diode 83a of Schottky comprise the group 84a semiconductor devices. In the lower branches of the group 84b semiconductor devices has the configuration identical configuration group 84a semiconductor devices. The above configuration is often used for such purpose, that the characteristics of the diode Schottky, which is the chief characteristic of p-i-n diode is used to build IGBT-transistors, in which the p-i-n diode is included as a free-wheeling diode.

In the above configuration IGBT transistors 81a and 81b, which are switching elements cannot instruct reverse current flow; consequently, the current split is not formed between the switching element and the free-wheeling diode. However, the current division is generated between p-i-n diode and the diode Schottky that are free-wheeling diodes. The basic configuration of the module 22 management is identical to the configuration shown in figure 3, however, in the above group configuration semiconductor element in the path of separation is between the free-wheeling diodes, so the following description is provided in the module 32 calculation of voltage drop in figure 3.

Fig shows an example of the characteristics of the voltage-current IGBT-transistor, p-i-n diode and the diode Schottky and groups of semiconductor devices containing IGBT-transistor, p-i-n diodes and diode of Schottky, which are connected in parallel at a certain temperature. On Fig if the reverse current of a group of semiconductor devices, which is in the enabled state (=Id_up or Id_low)is 0 or less, the current flows only in IGBT-transistor. On the other hand, if the reverse current is greater than 0, the current begins to flow in the diode Schottky. Then, when the reverse current exceeds I_l, the current begins to flow in p-i-n diode current division is formed between the diode Schottky and p-i-n diode and demonstrates characteristic, namely the increase of the voltage drop relative to the current additionally suppressed.

In module 32 calculate voltage drop Fig.3. the characteristic shown in Fig, is included as a table, as a mathematical equation, or as both of them, and drop V_on voltage in the group of semiconductor devices is displayed. In conclusion V_on is added so that it corrects the team V_refl voltage control, and V_ref which is the final team will be retrieved. Based V_ref control on/off switching element of the group of semiconductor devices is performed.

On Fig example, where the current flows in the order of IGBT-transistor, diode of Schottky and p-i-n diode relative increase of the reverse current. However, the order is not limited to the above, and provided some cases in which the procedure differs depending on individual characteristics.

As mentioned above, even if the group of semiconductor devices containing IGBT-transistor, p-i-n diodes and diode of Schottky, used according to option 7 implementation, voltage drop, which is formed in the group of semiconductor devices is adjusted. Therefore, the output voltage with high accuracy can be obtained, and the oscillation of the torque can be reduced.

When there is an impact of dead time, as described in option 2, the implementation, through the inclusion of the characteristics of the path of the current and the voltage drop in the group of semiconductor devices, the value of the voltage drop, which is formed in the dead time can be adjusted. Therefore, the output voltage with a higher accuracy can be obtained in version 7 implementation.

Above, the current sensor is 85 in order to determine the output current I_out, similar to the description of options for the implementation, current sensors can be provided so that they directly determine the current Id_up, which flows in a group 84a semiconductor devices upper branches, and current Id_low, which flows in a group 84b semiconductor devices lower branches, respectively. In total, the output current is I_out=-Id_up+Id_low, and Id_up or Id_low zero. However, if the leakage current when IGBT-transistor is in the disconnected state, is not negligible, the accuracy can be improved through the use of two current sensors.

Additionally, to directly determine the current which flows in every semiconductor device, including IGBT-transistor and diode free play, make up a group of semiconductor devices, current sensors that determine the absolute magnitude and direction of the currents that flow in IGBT-transistors 81a and 81b as switching elements, and current sensors that determine the absolute magnitude and direction of the currents that flow in diodes and 83a 83b of Schottky, can be connected. In this case, the voltage can be calculated by using only the characteristics of semiconductor devices when focusing on the current, which flows in every semiconductor device, therefore the accuracy of correction may be raised.

Additionally, under conditions where the temperature semiconductor devices vary greatly, temperature sensor, which determines the temperature of the group of semiconductor devices or the temperature of each semiconductor devices attached to calculate the voltage drop, which is formed in the group of semiconductor devices by using the characteristics of the group of semiconductor devices at a certain temperature, i.e. functions Fvon(). Through the implementation of the above accuracy can be further enhanced.

Option 8 implementation

Options 1-7 implementation shows an example in which the Converter power according to the present invention is used as actuating motor with variable speed; however, the Converter power according to the present invention can be used as a device 20 power Converter that connects to the system power supply, as shown in Fig. In this case, the current system is the main object that must be controlled; therefore, the team V_refl control voltage, which is formed in the module 310 formation of management teams voltage Fig, is formed so that it controls the current in the system. For example, if the Converter 1 on the input side of the power supply unit is replaced by a unit of 20 power Converter, DC voltage is set to a certain constant value, so the module 310 formation voltage control forming the team V_refl control voltage to set the active current is equal to a suitable value. Specifically, V_refl formed by PQ-management etc. Also in this case the module 320 calculate voltage drop calculates the voltage drop in the group of semiconductor devices as described in the options 1-7 implementation.

Option 9 implementation

Switching component and a diode element in the options 1-8 implementation can be formed from silicon or can be formed from a semiconductor with a wide-Smoking area, the width of the forbidden zone exceeds the width of the forbidden zone silicon. Semiconductors with wide-Smoking area include silicon carbide, gallium nitride, diamond etc

Additionally, the above elements are also high temperature resistance, therefore thermal radiator plate solar heaters can be , and possible replacement parts water cooling air cooling. Consequently, it is possible further miniaturization semiconductor modules.

Additionally, the power losses are low, so may achieve higher efficiency switching element and diode element, and can achieve higher efficiency semiconductor modules.

Additionally, preferably as a switching element and diode element was formed from a semiconductor with a wide-Smoking area, however, any element can be formed from a semiconductor with a wide-Smoking area, and can be obtained effect, which describes the options 1-8 implementation.

In options, 1-8 implementation of PWM control is described as an example, however, the method of control is a way to control supply voltage through the use relations on/off switching element, other methods of control can also be applied to the present invention. For example, the present invention can be applied to PDM (pulse-density modulation), which is a way to manage stress by changing the density of momentum, with constant width. In PDM-governance in the calculation for each period of control, which determines the density pulse relative to the target voltage average value V_on so by means of relations on/off, and then the density pulse of the next period of management can be defined. Essentially, in the case of PWM control one period on and one off period exist in the same period of management; however, in the case of the PDM control many time periods on and many periods off exist in the same period of management. Therefore, in the case of the PDM management total period of inclusion and total off period is the ratio of the on/off switch, and through the use of the obtained relations are obtained average V_on.

Description reference position

21: shoulder

22: control module

23a, 23b, 61a, 61b, 81a, 81b, 91a, 91b: switching component

24a, 24b, 62a, 62b, 92a, 92b: parasitic diode

25a, 25b, 64a, 64b, 84a, 84b, 95a, 95b: group of semiconductor devices

26, 29a, 29b, 65, 67a, 67b, 68a, 68b, 69a, 69b, 85, 96, 99a, 99b, 107a, 107b, 108a, 108b, 109a, 109b: the current sensor

31, 310: the module of formation of management teams voltage

32, 320: evaluation module low voltage

33: management module switch

63a, 63b, 83a, 83b, 93a, 93b: the diode Schottky

82a, 82b, 94a, 94b: p-i-n diode

Td: dead time

Tsw: the half-time of switching

1. The Converter power, which is done so that the shoulder, containing two groups of semiconductor devices that are connected sequentially, and each group of semiconductor devices contains a switching element and the semiconductor element, other than switching element, connected in parallel, connection point to which the group's semiconductor devices are connected in series is output contact output AC, and both ends of the shoulder is contact conclusions DC; and the current division is formed in the current which flows in every group of semiconductor devices between elements in each group of semiconductor devices, however given the current sensor, which determines the current that flows in a group of semiconductor devices, the module of formation of management teams voltage, which computes the values of the control commands voltage, which must be shown the evaluation module voltage drop, which calculates the voltage of each group of semiconductor devices through the use of current value, which is determined by the current sensor, and characteristics of the voltage drop, including the characteristic of separate each group of semiconductor devices and module, switching control, which adjusts the value of the command-control voltage, which is formed by the module of formation of management teams voltage through the use of a voltage drop, which calculated by evaluation module voltage drop to control on/off each switching element.

2. The Converter power of claim 1, wherein the evaluation module voltage drop calculates the voltage drop in the nth period of half-time of switching (n is a positive integer) through use of the current value, which is determined by the current sensor, the management module switch controls on/off each switching element by using the values of the voltage drop, which is calculated by the module calculation, voltage drop, and correction of the value of the control voltage, which is formed by the module of formation of management teams voltage as the value of the control voltage in the m-th period (m is a positive integer), who later nth period of half-time of switching.

3. The Converter power is on p.2, in which the current sensor is provided in order to determine the current that flows in the output contact output AC, evaluation module voltage drop calculates the appropriate voltage fall in two groups of semiconductor devices in the shoulder through the use of current value, which is determined by the current sensor and the time of inclusion of corresponding groups of semiconductor devices, which are displayed by the control unit switches relative to the nth period of half-time of switching.

4. The Converter power is on p.2, in which the current sensors are provided to determine the current that flows in the respective groups of semiconductor devices from two groups of semiconductor devices on the shoulder, and the corresponding voltage fall in two groups of semiconductor devices in the shoulder are calculated by using the value of the current, which flows in the respective groups of semiconductor devices.

5. The Converter power of claim 1, wherein the evaluation module voltage drop calculates the voltage drop by characteristics of the voltage drop, including the characteristic of separate each group of semiconductor devices, which is defined as the characteristic in which the current flows in a switching element in the dead time period.

6. The Converter power of claim 1, wherein switching elements are MOSFET-transistor (MOS field-effect transistors) or JFET-transistor (field effect transistors with p-n-junction), semiconductor elements, other than switching elements, are parasitic diodes, which are contained in MOSFET-transistors or JFET-transistors, and the device is made with the possibility to perform synchronous rectification.

7. The Converter power is on point 6, in which the free-wheeling diodes additionally connected as a semiconductor element, other than switching elements.

8. The Converter power of claim 1, wherein switching elements are IGBT-transistors (bipolar transistors with insulated gate), semi-conductor elements, other than switching elements, are objects of parallel connections with diodes connected in parallel, and the currents division formed between diodes.

9. The Converter power is one of claims 1 to 8, in which switching elements formed from semiconductor material with wide-Smoking area.

10. The Converter power is one of claims 1 to 8, in which semiconductor elements, other than switching element formed of a semiconductor material with wide-Smoking area.

11. The Converter power of claim 9, in which the semiconductor material with a wide gap is silicon carbide, gallium nitride or diamond.

12. The method of control device power Converter, at that the Converter power is made so that the shoulder, containing two groups of semiconductor devices that are connected sequentially, and each group of semiconductor devices contains a switching element and the semiconductor element, other than switching element, connected in parallel, the connecting point to which the group's semiconductor devices are connected in series is output contact output AC, and both ends of the shoulder is contact conclusions DC; and the current division is formed in the current flows in each group of semiconductor devices between the elements of each group of semiconductor devices; this calculates the value of the command-control voltage, which must be displayed on the output terminals of the alternating current, calculate the voltage drop each group of semiconductor devices through the use value of a current which flows in every group of semiconductor devices and characteristics of the voltage drop, including the characteristic of separate each group of semiconductor devices and adjust the value of the control commands voltage through the use of a voltage drop, which calculates to control on/off each switching element.

13. The method of control device power Converter indicated in paragraph 12, in which the voltage drop in the nth period of half-time of switching (n is a positive integer) is calculated by using the value of the current, which flows in each group, semiconductor devices, and the value of the command-control voltage, which is calculated as the value of the command-control voltage in the m-th period of half-time of switching (m is a positive integer), who later nth period of half-time of switching adjusted by using the values of the voltage drop, which calculates to control on/off each switching element.

14. The method of control device power Converter indicated in paragraph 13, in which the respective voltage fall in two groups of semiconductor devices shoulder calculated by using the value of the current, which flows in the output contact output alternating current and the time of inclusion of corresponding groups of semiconductor devices relative to the nth period of half-time of switching.

15. The method of control device power Converter indicated in paragraph 12, in which groups of semiconductor devices operate in order to perform synchronous rectification.

16. The Converter power under paragraph 10, in which the semiconductor material with a wide gap is silicon carbide, gallium nitride or diamond.