Superconducting josephson instrument and method of its manufacturing. RU patent 2504049.

FIELD: instrument making.

SUBSTANCE: substance of the invention: DTN on the basis of a multi-layer thin-film heterostructure comprises two superconductors that form electrodes, and a layer with metal conductivity between them from a metal-alloyed semiconductor. The layer has a locally non-uniform structure and is made as capable of simultaneous formation of two independent current transport channels in its volume, one of which represents a combination of chains of admixture atoms of metal that connect both electrodes and form quasi-unidimensional channels with metal conductivity for transport of superconducting current, and the other one - consists of separately arranged admixture atoms of metal, which form localised conditions of admixture centres and provide for transport of normal tunnel current, besides, the specified quasi-unidimensional channels represent internal shunts for a tunnel current in the layer. The method includes serial application of the first and second layers of the superconductor onto the substrate, a layer of the metal-alloyed semiconductor between them, formed by spraying of the semiconductor and the metal.

EFFECT: elimination of direct flow of current via a layer with provision of resonance mechanisms of current transport, increased specific voltage and differential resistance of a DTN; improved reproducibility of parameters due to usage of thicker layers of an alloyed conductor.

17 cl, 8 dwg, 1 tbl

The invention relates to the field of micro - and nanoelectronics, and can be used in the manufacture of superconducting integrated circuits (LISTS) of different purposes.

Known superconducting device with transition (hereinafter-SPD) based on a multilayer thin-film structures SNS (superconductor - normal metal - superconductor), consisting of a lower superconducting electrode S on the basis of connection of Nb layer of tantalum nitride (Ta x N) and upper electrode's also based on the connection Nb (US6734454 (B2), Van Duzer, et al., 11.05.2004).

The disadvantage of this instrument is that the weak link is localized in the region of normal (N) of the metal layer, and that the N metal must simultaneously meet two mutually contradictory requirements. On the one hand, to provide large densities of the critical current at technologically reasonable thickness of the layer it must have a large effective coherence length ξN, i.e. be . On the other hand, in order to prevent significant suppression of superconductivity in S electrodes, its transport properties must be significantly worse compared to similar parameters of superconductors (.., .., JETP, That 96, no 4, 1420, 1989), i.e. the material layer should be a high resistance relative to the material of electrodes. There is significant suppression of superconductivity in electrodes, resulting in the characteristic voltage transition (V c =I c R N I c - critical current transition, a R N - normal resistance remains low, and high-frequency properties in virtue of the Josephson remain unsatisfactory.

Known SPD based on a multilayer thin-film structures superconductor - normal metal - superconductor, including the formation of the lower superconducting electrodes on the basis of connection of Nb layer of phase nitride niobium (Nb x N) and the top electrode is also based on the connection Nb (EP 1365456 (A2), YAMAMORI HIROTAKE et al., 26.11.2003). Technological advantage of this method is the use of only one source spraying for the formation of the whole patterns. However, the main disadvantage of this method is a metal layer and respectively receiving SPD SNS type with all the ensuing disadvantages.

There are other analogues of the SPD with the use of more highly resistive layers on the basis of metal alloys, for example alloys PdAu, TiN. In all the mentioned structures were SPD SNS type, in which the current transport was carried out by direct current flow through a layer from a purely metallic conductivity. In such transitions, as a rule, the size of the characteristic voltage does not exceed tens of microvolts, which corresponded to operating frequencies up to 20 GHz. For most practical applications require SPD with a characteristic voltage hundreds of microvolts and operating frequencies in the range of 20-200 GHz and above. So, for example, for Metrology applications working frequency should be in the range of 70 and 90 GHz GHz.

Known SPD and the manufacturing method based on a multilayer thin-film structures superconductor - normal metal - superconductor. SPD includes the first superconducting electrode of Nb layer of heavily doped metal amorphous silicon (alpha-Si) and upper superconducting electrode also from Nb. The method involves successive application of the substrate of the first and second layers of the superconductor, layer doped semiconductor metal between them, formed by spraying semiconductor and metal (see Gudkov A.L., Kupriyanov M. et al Atlas, K.K. Likharev Properties of Josephson junctions with a layer of doped silicon. JETP. 1988. The so-94. .7. P.319-332 - the closest analogue of the first and second group of inventions).

The advantage of this device is that as an impurity is made of metal forming deep impurity levels in the semiconductor and mode of formation of a layer is selected such that the amorphous semiconductor saturable metal admixture to a state of complete degeneration with the formation of material with metallic conductivity, after which the doping stops.

How to set (Kulikov VA, et A1., A mm-wave radiometer with planar Nb/α-Si/Nb josephson junction. IEEE Trans. on Magn. MAG-27, 1991, №2), the degree of alloying α-Si admixture Nb approximately 11%. The result is a device SNS type, and enough high resistivity layer. These crossings end design demonstrated a high current density of 5 to 10 A/cm2 and above.

The drawback is the possibility of the implementation of the SAP only sub-micron square of 0.01-1 2 microns . If a larger area obtained either large critical currents (7), which leads to overheating of the transition, or the small V c . For a number of applications, including programmable quantum standards Volt, generator system and other high-frequency devices, requires SPD area of up to 100 microns 2 and having a V c from 100 MACs and above. In particular, for the metrological needs need transfers of large square with V c & GE 150 MACs and values of I from fractions up to a few milliamps. Requirement to the value of I is connected with the necessity of obtaining stable steps Shapiro large amplitude when exposed to external operating frequency.

Group of inventions aimed at corrective SPD.

Patentable SPD based on a multilayer thin-film heterostructures contains two layers of the superconductor-forming electrodes, and the interlayer with metallic conductivity between them of a doped semiconductor metal.

The difference is that the gap has locally a heterogeneous structure and is made with a possibility of simultaneous education in its entirety two independent channels of transport current, one of which represents a set of chains of impurity atoms of metal connecting both electrodes and forming channels with metallic conductivity for transport of the superconducting current. Another channel consists of separately located impurity atoms of metal forming localized States of impurity centers and ensure the normal transport of the tunneling current. Mentioned channels are internal shunts for the tunnel current in the interlayer.

The SPD can be characterized by the fact that the conductivity of a transport current preferably equal, and that the channels consist of metal atoms forming deep impurity levels in the semiconductor and what channels are made up of atoms of refractory metals forming deep impurity levels in semiconductor.

The SPD can be characterized by the fact that the channels consist of clusters of metal containing at least two atoms, and, in addition, the fact that the semiconductor is an amorphous material.

As a semiconductor can be used silicon, and as a dopant - superconductor material or refractory metals, selected from the group consisting of W, TA, Mo. Channels can consist of metal atoms forming deep impurity levels in the semiconductor and clusters of metal containing at least two atoms. Layer may contain at least one layer of metal or other conductive material, parallel conforming interfaces layer, and electrodes with a thickness of at least one atomic layer.

The SPD can be characterized by the fact that metal or other conductive material inside layer possesses superconducting properties, as well as the fact that metal or other conductive material has ferromagnetic or antiferromagnetic properties.

Patentable method of manufacturing of superconducting device Josephson includes successive application of the substrate of the first and second layers of the superconductor, layer doped semiconductor metal between them, formed by spraying semiconductor and metal.

Difference method is that after applying the first layer of a superconductor picked settings spraying semiconductor and metal from the conditions of formation of a conducting layer with locally inhomogeneous structure containing its scope of connecting the first and second layers of the superconductor set of chains of random impurity atoms and not associated with the above chains separately located impurity atoms or clusters of metals forming localized impurity centers.

The concentration of The impurity atoms or clusters of metal inside layer is chosen from the condition:

C 2 >C>C 1 , where C 1 - concentration of the impurity atoms or clusters, where the average distance between them is much greater than the radius of localization; 2 - concentration of the impurity atoms or clusters, where the average distance between them is less than the radius of localization.

The method can be characterized by the fact that the source of the spraying of semiconductor and metal has a target of semiconductor with the required concentration of metallic impurities and/or tile target of semiconductor and metal.

The method can be characterised by the fact that used two independent sources of spraying semiconductor and metal. As a semiconductor can be used silicon, and as a dopant - superconductor material or refractory metals, selected from the group consisting of W, TA, Mo, and the degree of alloying is 6-11%.

The method can be characterised by the fact that the temperature of the substrate and modes spraying choose from a condition of education amorphous semiconductor and avoid the formation of compounds of crystalline phases semiconductor with alloying metal admixture, and that locally inhomogeneous structure is layered structure formed by layers of metal without breaking vacuum.

The technical result of the first invention of the group - the increase of the size V c at the set value of I and the quantity R d differential resistance of the SPD in the field of stresses corresponding to operating frequencies and the possibility of producing the SPD any square; the exception of direct current flow through a layer with the provision of resonance mechanisms of transport for currents up to several mA; improve the reproducibility of parameters through the use of thicker layers of doped semiconductor.

The technical result of the second invention of the group - the possibility of forming a specified parameters doping layer in the process without breaking the vacuum: increase characteristic voltage V c >150-300 MACs normal resistance RN>0.5 to 1.0 Ohms and working frequency F c >75-100 GHz and amplitudes steps Shapiro, comparable with the value of I with .

To achieve technical results justified the following explanations of the mechanisms of functioning and experimental data.

Improvement of characteristics of PSD possible to achieve a simultaneous increase of the magnitude of V c at the set value of I and the quantity R d transition in the field of stresses corresponding to operating frequencies. The volt-ampere characteristic (VAC) of the transition should be as nearly as unambiguous, i.e. setting - Stewart must satisfy the condition:

Based on the requirements of the problem, the parameter β should be about 1 or ≤1 and standards Volta may slightly exceed one. Note that for PSD SIS-type parameter β>>1 and for SNS type?<<1.

The desired result in invention is achieved by selecting layers with specific properties, as well as due to the choice of the regime and the degree of doping semiconductor layer PSD in superconductor heterostructures - doped semiconductor - superconductor (Superconductor - Doped semiconductor-Superconductor), - in the implementation of the SAP SDS-type, because the transport of current in such a gap is carried out exclusively by impurity centers. In invention unlike the prototype in the semiconductor gap are provided with elastic and anelastic mechanisms of resonant transport current through localized States formed by impurity centers.

Spraying mode so that the level of doping of semiconductor metal ensured the passing of the superconducting current on a resonance percolative trajectories, which is a channels with metallic conductivity formed by impurity centers. Course of normal current carried out mainly through the mechanism of inelastic tunneling through localized States. An additional condition for the implementation of the SAP SDS-type can be an approximate equality of the conductivity of both channels of a transport current, and the width of the zone of quasi-one-dimensional channels should be significantly less than the value gap superconductor (D<D).

In invention of the increased value of I c provide channels with metallic conductivity and density per unit area Josephson junction and the value R d as well as R N defined by the mechanism of inelastic tunneling through localized States. The uniqueness of the VAH and the lack of hysteresis (beta of about 1) is provided with shuntirovaniem resonance tunneling by quasi one-dimensional TV with metallic conductivity, i.e. the internal shunt surgery.

As a result of selecting the mode and extent of doping semiconductor layer is obtained Josephson transition SDS type, which in their properties is fundamentally different from transitions SNS and SIS type and occupies an intermediate position. This means that the degree of alloying limited both from above and below. Indeed, the increase in the degree of alloying will lead to the complete degeneration of the cavity and obtaining transition SNS-type, and a decrease in the degree of doping leads to more rare location of impurities in the interlayer distances exceeding the radius of localization. Decreasing the degree of alloying channels with metallic conductivity already are not formed, and Josephson transition becomes transition SIS type.

This technical result in the production SPD SDS type is achieved by the fact that the degree of alloying is chosen less than in degeneracy of semiconductor and in the ratio of concentrations of impurity, so that decreasing the degree of alloying gradual transition from the transition SNS type of transition SIS type. This changes the shape of the I-V curves in the field of operating voltages and accordingly frequency bands. WACH becomes close to WACH transition SINIS type, but the parameter β remains close to one. As is known in the tunnel junctions amplitude steps Shapiro exceeds the value of I, c and even crosses the axis of tension. The proximity of the properties transitions SDS transitions SIS and SINIS type and allows for maximum amplitudes of steps Shapiro, that was confirmed experimentally.

It is experimentally established that the desired degree of alloying layer of amorphous silicon metal (Nb or W), forming deep impurity levels, lies in the range of 6-11%. This is enough to smoothly regulate the conductivity of a semiconductor layer and reproducible SPD SDS type.

A method of manufacturing SPD involves the use of known technologies of thin films of equipment and materials. First on the prepared substrate is applied by the method of ion-plasma sputtering or other method of formation of thin films in a single vacuum cycle superconducting heterostructure, consisting of two layers of a superconductor and a gap between them of a doped semiconductor. Formation modes of heterostructures, such as power sources, the temperature of the substrate and the cleanliness of the whole process, are selected so as to exclude the mutual diffusion of materials through the boundary layers and ensure the purity of the layers. The formation of the layer is carried out by means of deposition at the both of semiconductor materials and metal spraying or mosaic target from a single source or simultaneous spray two targets from two independent sources.

The nature of the invention is illustrated by drawings, where:

figures 1, 2 shows patentable SPD in a section;

figure 3 - to the explanation of the principle of functioning of the invention SPD (a) and closest analogue (b);

figure 4 - comparison of the VAH invention SPD (a) and closest analogue (b);

figure 5-8 - experimental WACH (explanation in the text).

Figure 1 shows the design of a planar SPD in the context where the numbers marked with: 1 - substrate; 2 - layer superconductor as the bottom electrode; 3 - layer doped semiconductor metal, acting as a layer between two superconducting electrodes; 4 - layer superconductor as the top electrode; 5 - layer insulation; 6 - layer wiring top electrode.

Item 7 marked the location of the superconducting contact between the layers of a superconductor 4 and 6.

Figure 2 shows a modification of the design of the SAP. Layer 3 doped semiconductor metal, acting as a layer between two superconducting electrodes 2 and 4, may contain at least one layer 8 metal or other conductive material, parallel conforming interfaces layer, and electrodes with a thickness of at least one atomic layer.

Figure 3 explains the principle of functioning of the invention SPD (a) and the nearest analogue of the SNS type (b), which vary with the concentration of metallic admixture at layer 3 of the semiconductor. It is indicated: 9 - superconducting electrodes; 10 - layer semiconductor doped with metal; 11 - the boundary between space and the cell; the 12 - single impurity atoms of metal; 13 - impurity in the form of metal clusters consisting of several atoms.

Position 14 marked trajectory conditional on the transport channel current through a chain of impurities. Distance r i between neighbouring impurity centers smaller than the radius of localization of electrons in a semiconductor for single atoms of metal or smaller than the radius of the electronic environment (electron cloud) r cl for the metal cluster.

Position 15 shows the relative probable trajectory through the channels of the resonance elastic and inelastic electron tunneling through the localized impurity centres, which r i >a, r cl .

In the model (figure 3, a) is shown schematically the simultaneous presence of two mechanisms of transport current: channel with metallic conductivity (.14) and the channel with the resonance tunneling through localized States (position 15). Interlayer in this case has the special transport properties for superconducting current, and for the normal current, and Josephson transition is the transition SDS type. Model (figure 3, b) demonstrates homogeneous and degenerate as a result of doping to the metallic conductivity layer in which the concentration of metallic impurities such that the average distance between the impurity centers smaller than the radius of localization (r i <α, r cl )

Figure 4 schematically shows the form SOCIETIES: a) SPD SDS-type and b) SPD SNS type (analogue). POS. 16 show areas WAH, corresponding to the superconducting current; .17 - resistive areas of the ISLANDS.

There are a number of basic differences. The VAH (fig.4), after the 16 should plot close to the horizontal, which can also be hysteresis depending on the value of dimensionless capacity β SPD. The behavior of resistive plots (17) take off clamping WAH due to different mechanisms of transport of the current very different and are described by different formulas. Form of a resistive plot WAH SPD SDS type is determined by the dominant processes of resonance tunneling through one or two localized States and is close to the ISLANDS, following from theory of -Matveev:

Here: S - cross-sectional area Josephson transition; (g, E 0, and C is the density of resonance centers, provision of energy level of drug relative to the Fermi energy and radius of the drug, respectively; λ EP - a dimensionless constant characterizing the electron-phonon interaction; L is the distance between the electrodes.

Multipliers S/α 2 and S/Lα in expressions (3), (4) determine the total number of statistically independent channel tunnel through one and two LS respectively. The existing difference due to the fact that in the case of two drugs these centers should not necessarily be located along the line perpendicular to the planes of the borders of the structure. The factor of (La) 1/2 determines the effective distance at which the drug may be shifted relative to each other in the volume of the cavity without loss of effectiveness of the instrument channel conductivity. Multipliers (gα 3 E 0 ) 2 , (2gdα 2 T) 2 and (2gdα 2 eV) 2 set the probability of formation of proper channel conductivity. For a channel with one drug this probability is determined by the effective volume of space layer, which can be used by an electron to carry out the process of resonance tunneling. For channels with two drugs, the likelihood is also depends on the volume of the cavity, which can be employed for the process of both the portion of energy (Tons or eV), which can be received or given by an electron during tunneling. The last of the factors in formulas (3), (4) determine the optimal conductivity of the channel tunnel.

Form of a resistive plot WAH SPD with the parameter β & GE 1 can be described by a simple formula:

with parameters σ n and beta n , the values of which can be easily determined from experiment.

The traditional form of a resistive plot WAH SPD SNS type (figure 4 (b) is described by the well-known resistive model:

Above this area should be plot WAH, corresponding to a normal resistance (Km). And for the SPD SNS type it is characterized by the excess current I ex .

In contrast plot WAH SPD SDS type (figure 4 (a), corresponding to a normal resistance and above gap voltage (V (g ), characterized by a lack of value of current I df . The value of current is proportional to the lack of Delta-G and occurs in the case when G<Δ. For transition SNS type the value of the excess current is proportional to G, and the width of the conduction G exceeds 2?.

Figure 5 presents the experimental WAH SPD-based heterostructures Nb/α-Si/Nb with a layer of amorphous silicon (alpha-Si), with W (transition parameters: β = 1, I, c =0,18 mA, R N =0.2 Ohms, V c =0,036 mV): (a) - Autonomous ISLANDS; b) ISLANDS transition scaled-current;) ISLANDS transition under the action of external frequency radiation. Crossing space -9 x 9 2 microns .

SPD was executed as follows. After the formation of heterostructures standard methods photolithography and dry-etching was formed upper electrode sets the size of the transition in the plan, and the topology of the bottom electrode. Then a layer of isolation which methods lithography was opened window to the top electrode. Then in a single vacuum cycle was produced ion cleaning of the surface of the upper electrode and caused exploration layer of superconductor. Methods lithographs from this layer was formed distributing the top electrode. As a result of the generated SOP WACH, in the form of a fundamentally different from WACH transitions as SNS, SIS types.

Used standard technology of formation of planar Josephson transitions. As a material layer used amorphous silicon (alpha-Si), alloyed W. Layer formed by the method of magnetron sputtering mosaic target α-Si+W. All superconducting heterostructure Nb/α-Si(W)/Nb was formed in a single vacuum cycle magnetron spray targets. When forming a picture SPD used standard methods lithography used in electronics. Formation modes of the device Josephson SDS type on key technological operations are given in the Table.

Figure 6 shows an experimental WAH-based heterostructures Nb/α-Si/Nb with alpha-Si layer, alloy W (transition parameters: β>1, I, c =0,44 mA, R =0.65 Ohm, V c =0,286 mV): (a) - Autonomous ISLANDS; b) ISLANDS transition scaled-current;) ISLANDS transition under the action of external frequency radiation. Crossing space -9 x 9 2 microns .

On Fig.7 and Fig.8 shows experimental WAH two SPD SDS-type on the basis of heterostructures Nb/α-Si/Nb, but differ introducing an additional layer of metal (Nb) inside layer α-Si-doped tin (a) - Autonomous ISLANDS; b) ISLANDS transition under the action of external frequency radiation).

Metal layer is parallel to the borders of partition layer, and electrodes. Both SPD made in one technological cycle.

Graphics fig.7, b shows for the design shown in figure 1, graphics fig.8, b - 2. The thickness of the layers 2, 4 niobium is 200 nm and 100 nm, respectively; the thickness of the layer 3, is made from α-Si-doped tin, is 8 nm. Layer thickness 8 niobium is 1-2 nm, it is placed in the middle of the thickness of the layer 3, and the amount of thicknesses alloyed α-Si layers in both cases is equal. Area navigation -9 x 9 2 microns .

It is seen that the value of I c SPD with a layer 8 (Fig.8) increased 30 times in comparison with the control of the SAP (Fig.7). It proves the fact that the total number of channels transport current, as a quasi-one-dimensional channel with metallic conductivity and channels of resonance tunneling increased due to the presence of a layer 8 niobium.

The use of SDS-type stratified layer of doped semiconductor metal layers increases the value 1 by increasing the transport channel current improve the reproducibility of parameters through the use of thicker layers of doped semiconductor if the amount of the critical current. For PSD invention SDS-type large area provided with more typical voltage V c >150-300 MACs normal resistance R N >0.5 to 1.0 Ohm, the working frequency F c >75-100 GHz and amplitudes steps Shapiro, comparable with the size of the I c .

MODES OF FORMATION OF THE SPD ON KEY TECHNOLOGICAL OPERATIONS

Name operations

Technological modes

Characteristics of a layer

Preparation of a silicon substrate 1

Standard chemical washing of - the silicon wafer KDB - 12

p=12 Ohm·cm

Applying a layer 2 Nb

Pressure remaining gases P OST .=(3-5)10 -4 PA T .. =40-45°With the Power of the magnetron=800 W t spraying = 90

d=0.2 m R s =0.9 to 1 Om/NASB g=R300/R10=2.5 T c =9,2 To

Applying a layer 3 α-Si(W)

Cooling time after application Nb1 t OST . = 5 min T .. =30-35°C Pressure . P OST =(3-5)10 -4 PA Power of the magnetron = 200 W t spraying = 20-30 C

d(a-Si(W))=5-10 nm

Applying a layer 4 Nb

Pressure . P OST =3-5·10 -4 PA T .. = 35-40 C t spraying = 40

d=0,08 microns R s =0.9 to 1 Om/NASB g=R300/R10=2 T c =- 9,2 To

PCTs(Nb2/α-Si/Nb/α-Si/)

Gas - CF 4 +O 2 (5:1) Pressure R=0,2 PA Power P=40 W t etching=20 min

PCTs layer 2 Nb

Gas - CF 4 +0 2 (5:1) Pressure R=0,2 PA Power P=40 W .=30-40 min

Applying a layer of 5 isolation (Al 2 O 3 )

Pressure . P OST = 3·10 -3 PA T .. =150-200°With t spraying = 3 min

d=0,35 microns

Opening Windows in the layer of Al 2 O 3

: SLA-3-N 3 RO 4-N 2 O (100 g - 200 ml - 150 ml) T Tr. =85 C t etching=4 min

IO layer 4 and applying a layer of 6 Nb

Gas - AG Pressure R=0,67 PA Power P rf =0,6 kW t cleansing=2 minutes G rowing =1,3·10 -4 PA T .. =100-150°With Duration. spraying = 8 min

d=0.25 micron R s =0.9 to 1 Om/NASB g=R300/R10=2 T c =9,2 To

1. Superconducting device Josephson based on a multilayer thin-film heterostructures containing two layers of superconductor-forming electrodes, and the interlayer with metallic conductivity between them of a doped semiconductor metal, characterized in that the gap has locally a heterogeneous structure and is made with a possibility of simultaneous education in its entirety two independent channels of transport current, one of which represents a set of chains impurity atoms of metal connecting both electrodes and forming channels with metallic conductivity for transport superconducting current, and the other consists of separately located impurity atoms of metal forming localized States of impurity centers and ensure the normal transport of the tunneling current, and mentioned channels are internal shunts for the tunnel current in the interlayer.

2. The device according to claim 1, characterized in that the conductivity of a transport current preferably equal.

3. The device according to claim 1, wherein the channels consist of metal atoms forming deep impurity levels in semiconductor.

4. The device according to claim 1, wherein the channels consist of atoms of refractory metals forming deep impurity levels in semiconductor.

5. The device according to claim 1, wherein the channels consist of clusters of metal containing at least two atoms.

6. The device according to claim 1, wherein the semiconductor is an amorphous material.

7. The device according to claim 1, characterized in that in the capacity of semiconductor is used the silicon, and as a dopant - superconductor material or refractory metals, selected from the group consisting of W, TA, Mo.

8. The device according to claim 1, wherein the channels consist of metal atoms forming deep impurity levels in the semiconductor and clusters of metal containing at least two atoms.

9. The device according to claim 1, characterized in that the cavity contains at least one layer of metal or other conductive material, parallel conforming interfaces layer, and electrodes with a thickness of at least one atomic layer.

10. The device of claim 9, wherein the metal or other conductive material possesses superconducting properties.

11. The device of claim 9, wherein the metal or other conductive material has ferromagnetic or antiferromagnetic properties.

13. The method according to section 12, wherein the source spraying semiconductor and metal has a target of semiconductor with the required concentration of metallic impurities and/or tile target of semiconductor and metal.

14. The method according to section 12, wherein the used two independent sources of spraying semiconductor and metal.

15. The method according to section 12, characterized in that in the capacity of semiconductor is used the silicon, and as a dopant - superconductor material or refractory metals, selected from the group consisting of W, TA, Mo, and the degree of alloying is 6-11%.

16. The method according to section 12, wherein the temperature of the substrate and modes spraying choose from a condition of education amorphous semiconductor and avoid the formation of compounds of crystalline phases semiconductor with alloying metal admixture.

17. The method according to section 12, wherein the conductive layer in the form of a layered structure formed without breaking vacuum.