Method of making high radiation brightness laser diode

FIELD: physics.

SUBSTANCE: wide-emitter laser medium which is capable of generating multimode optical radiation is formed, having an active waveguide emitting layer, a first end and a second end. A partially transparent mirror is formed at the second end of the wide-emitter laser medium. The wide-emitter laser medium with a partially transparent mirror is placed on a high thermal conductivity substrate. A device is formed for adjusting the mode structure, which is based on a digital planar hologram, having an input end, said device being formed by forming a digital planar hologram at the first end of the wide-emitter laser medium in optical interaction with said hologram; the digital planar hologram is used as an opaque mirror by placing it on the same substrate as the laser medium, as a result of which an optical cavity is formed, and modes of optical radiation of the laser diode are selected, adjusted and amplified according to a give function.

EFFECT: improved optical characteristics of the laser diode without reducing optical power.

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The scope of the invention

The present invention relates to a method of manufacturing a laser diode, in particular to a method of manufacturing a laser diode with high brightness radiation. More specifically, the invention relates to a method of manufacturing a laser diode shirokoaperturnom type in combination with a digital planar hologram. The invention can be used to increase the brightness of the light emitted by the laser diode in combination with a digital planar hologram (hereinafter, called CPG) and to reduce the number of modes of the output light. Reducing the number of modes allows to reduce the divergence of the output beam without appreciable loss of light power. The method can also be applied in the manufacture of optical devices for transmission of light energy over large distances, for laser processing of materials, to illuminate distant objects visible and infrared light, etc.

Prerequisites to the creation of inventions

One of the problems existing in laser technology, it is the complexity of the radiation generated by the diodes with the emitter of radiation, formed in the end face of the waveguide, which, in turn, part of an active laser medium. It is known that the light rays emitted from this diode with edge emitting, have a complex structure. Such beams are asymmetric and have the time the second divergence in the plane of the emitter (i.e. in the so-called slow axis) and in the plane perpendicular to the plane of the emitter (i.e., the so-called fast axis). Although the divergence of the rays in the fast axis far more than a slow axis, the wave front in the direction of the fast axis close to the form of cylindrical waves and the beam can be collimated using a cylindrical lens. On the other hand, in the direction of the slow axis beam structure is very complex, and its collimation can be difficult or possible only to a certain extent.

The radiation pattern of the above-mentioned type significantly complicates the formation of the desired light beam, collimation, focusing on the object and introduction to optical fiber. One solution to the above problem is the input of the laser diode in this mode, in order along the slow and fast axes he had only one radiant fashion. This process is called selection mod. This mode of operation can be realized due to the construction of the external resonator, consisting of many individual elements of the volumetric type, requiring individual precision setting, which is extremely-low-tech mass production and therefore is not used. The design of such external resonators known and repeatedly described in the textbooks. Another solution of the above problem Zack is udaetsya in the use of anamorphic optics, such as a special separate collimator to collimate the radiation in the direction of the fast and slow axes, a special focusing optics, etc. But precision collimators of this type are expensive and require precise optical alignment during Assembly, which in practice limits their use in mass production. The design of such collimators are known and described in many patents, for example U.S. patent No. 4,687,285; No. 5,940,564; No. 6,031,953 and in European patent publication EP No. 0864892.

The above problem is exacerbated when applied to laser diodes with wide emitters, i.e. emitters with large (greater than ~10) the ratio of width to height. Motivation for using a wide emitters is the desire to increase power output without increasing the density of the electric current passing through the diode. An example of such laser diodes are recently introduced to the market a device with emitter width in excess of 100 microns (slow axis) and height not exceeding 1.5 micron (fast axis). In some models, such as laser diodes height of the emitter is fractions of a micron. The output power of these shirokoaperturnykh diodes exceeds a few watts and can reach tens of watts, and the structure of their radiation along m is delannoy axis has a complex multimode nature, which leads to a high degree of divergence of the output beam.

Known approaches to solving this problem in relation to shirokoaperturnykh lasers edge emitting not allow to form a single transverse-mode beam without significant power losses and increase the weight and dimensions of the laser device. Therefore, the advantages inherent in the widely-optical emitter laser diode with edge emitting, are not fully used.

In connection with the above, the task of improving the optical characteristics of these laser devices, such as the composition of the mod, the divergence of the rays in the direction of the slow and fast axes without appreciable reduction of the optical power, and therefore the brightness of the radiation remains a topical problem in laser technology.

A new method for the control of optical radiation parameters, such as the direction of light propagation, phase changes, spectral dispersion, etc. is to use planar optical waveguides with quasi-continuous change of the refractive index of light in a planar waveguide (see U.S. patent No. 7929190 issued to Vladimir Janikowo 19 April 2011). This approach has been called digital planar holography - a new technology recently developed for the fabrication of miniature components in integrated optics. The essence of technology qi is the global planar holography consists in embedding the digital hologram, calculated by a predetermined algorithm on a computer, the structure of the planar optical waveguide so that the waveguide created region with a changed refractive index than that of the original. It is clear that the light propagating in this waveguide, passing through these areas, changes direction, and the presence of regions of the waveguide with varying refractive indices leads to spectral dispersion, and hence to the change in the phase velocity. If the refractive index of light in the waveguide is modulated by the spatial correctly, for each wavelength of light can be directed to the desired point and/or at the desired point with a given phase mismatch. Thus, there is a possibility for the control of optical radiation parameters, such as the direction of its propagation, phase changes, spectral dispersion and, as we discovered, modal composition of sources of coherent radiation.

Digital planar holography allows the propagation of light only in the plane of the hologram, but does not allow the propagation of light in the direction perpendicular to the plane of the hologram. The obvious advantage of the planar configuration is easy access to the surface, which must be embedded hologram, which significantly simplifies the manufacturing process of the device.

As WPI is STN, in the optical waveguide light is limited by the gradient of the refractive index and propagates in the waveguide layer, or the core inside the shell layers, or shells. Materials for the waveguide layer and the shell layer should be selected so that the refractive index of the waveguide layer N_coreexceeded the similar ratio in the membranes, that is, one should observe the following condition: N_core>N_clad. In the cylindrical waveguide, such as optical fiber, the light beam propagates along the axis of the waveguide (single beam). Planar waveguides, which are produced in successive superimposed flat layers of transparent material with a certain gradient of the refractive index on the standard substrate, for example, semiconductor silicon, allow free propagation of light in two orthogonal directions in the plane of the waveguide layer. Light propagating in the waveguide layer of the planar waveguide, to some extent also penetrates in the area above and below the waveguide layer, i.e. in the shell. If the refractive index of light in the waveguide is modulated by correctly for each specific wavelength it can be directed to the desired point, and this can be used technique of digital planar holography./p>

There are several ways of modulating the refractive index of light, one of which consists in forming the desired pattern methods microlithography. Modulation is achieved by embedding a digital hologram in the surface of the waveguide or of one of the shell layers, or in both layers in the contact zone between them. It is clear that the use for this purpose the standard processes of lithography provides the conditions for mass production and reducing the cost of manufacture.

We have previously developed several methods of spatial modulation of the refractive index of light in the plane of the planar waveguide, one of which consists in forming the desired pattern by the methods of direct micro - and nanolithography. For this purpose, we used the method of direct printing (direct draw) focused electron beam on the layer of electron resist, pre-deposited on the surface of the waveguide layer of the planar waveguide. The drawing was carried out on the electronic nanolithography "VISTEC VB300". This nanolithography equipped with an electron gun with thermopolium emission cathode, providing a high current density electron beam at an accelerating voltage of 50 Kev to 100 Kev; fast imaging with a resolution of 20 bits is determined by the generator is zobrazenie, operating at a frequency of 50 MHz. This nanolithography ensures structures pattern with line width of not more than 10 nm in the exposure to 1.2 mm (without stitching fields).

Image CPG obtained in the resist, is transferred into the waveguide layer to a depth of from 20 to 160 nm by etching this layer in a fluorine-nitride plasma.

An alternative method for manufacturing CPG is nanopaste. Each figure CPG is generated (formed) using the computer and is executed by the above algorithm in accordance with the specific application of the CPG. Then, drawing in accordance with one of the procedures of making lanostane (see, for example, http://en.wikipedia.org/wiki/Nanoimprint lithography) is transferred to the work surface. The migration pattern of CPG from the surface of namestamp on the surface of the waveguide layer of the planar waveguide is directly stamped into the layer of resist deposited on the surface of the waveguide layer, and the resist image etched in the waveguide layer to a depth of from 20 to 160 nanometers treatment in a fluorine-nitride plasma. CPG consists of numerous nanoceramic, each of which may have a width of about 40 to 100 nm and a length of less than approximately half the wavelength of light, the topology, the location of which is determined by the order of the hologram.

The above-mentioned device crowncom CPG formed on a standard substrate, for example, of semiconductor silicon. Despite the huge number of nanoceramic (about 10⁶), the typical size of the device CPG does not exceed a few square millimeters.

In General, CPG used to optimize the mode structure of the laser diode and increase the brightness without significant loss of radiated power, consists of optimized combinations superimposed on each of the drawings, each of which interacts only one wavelength of light, one spatial fashion across the entire spectrum of the laser diode.

The invention

Patented a method of manufacturing a laser diode with high brightness radiation is that: form the widely-emitter laser medium capable of generating a multimode optical radiation, which has an active waveguide emitting layer, a first end and a second end; forming a partially transparent mirror at the second end of the common-emitter laser medium; place widely-emitter laser medium with a partially transparent mirror on a substrate with high thermal conductivity; the method characterized in that to increase the brightness of the radiation form the device adjustment mode structure based on digital planar hologram having an input end, and the specified device form put the m form digital planar hologram at the first end of the common-emitter laser medium in the optical vzamimodejstvie with it, use digital planar hologram as an opaque mirror, placing it on the same substrate, where the laser medium, resulting in the optical resonator; and carry out the selection, restructuring and strengthening of the modes of the optical radiation of the laser diode at a specified or this function.

In other words, the above-mentioned laser diode with high brightness radiation is mainly due to 1) from the laser medium and device adjustment mode structure based on CPG, which acts as an opaque mirror at the first end of the active emitter layer and 2) the semitransparent mirror at the second end of the active emitter environment, which is radiated from the laser diode light of high brightness.

For a better understanding of the method of making the present invention more appropriate to consider the structure and principle of operation of the laser device with high brightness radiation, for which manufacturing is the manufacturing method.

The above-mentioned laser diode with enhanced brightness radiation consists of the laser medium, installed on a supporting substrate made of a thermally conductive ceramic, and based on CPG device adjustment mode structure, which is formed by standard semiconductor PU glue the eve of the substrate. Both of these components (laser medium and the device adjustment mode patterns), in turn, mounted on a circuit Board made of a suitable material with high thermal conductivity, such as ceramics with high thermal conductivity.

Optically active laser medium (wide-aperture laser) emits multimode light beam. In the context of the present invention, the term "large-aperture emitter" refers to the emitter, which has a width of from 10 microns to several hundred microns and a height of from 0.2 nm to several microns.

The active laser medium is limited to one side of the mirror ratio of the partial reflection 2% R<10%), as a rule, R, is equal to approximately 4%), and on the other side of the antireflective coating has a very low reflectance (R<1%) ("open-end"). Optically active laser medium is a waveguide layer and emits multimode light beam. In the context of the present invention, the term "large-aperture emitter" refers to the emitter, which has a width of from 10 microns to several hundred microns and a height of from 0.2 micron to several microns (see, for example, http://en.wikipedia.org/wiki/Laser_diode).

The device adjustment mode structure based on CPG and mounted on a semiconductor silicon wafer, comprises (a) at least one lower shell layer of silicon dioxide (SiO ₂), having a thickness of from several to several tens of microns, and (2) of the waveguide layer, stacked on the lower shell layer made of silicon dioxide and doped such materials as germanium, which increases the refractive index of the waveguide layer and has a thickness of from several tens nanometers to about one micron. Meningeal layer and the waveguide layer have different refractive indices of light, which differ in the amount of from 1% to 5%. In other words, the refractive index of light in the waveguide layer is greater than in the shell. Note that as the material of the waveguide layer can be used a layer of SiON, SiO₂:GeO₂Si₃N₄and others that can be applied on the lower shell layer. If necessary, the waveguide layer may be further stacked upper shell.

Waveguide layer device includes CPG, which is a set of holographic elements, manufactured in the form grooves with a depth not exceeding the thickness of the waveguide layer. Preferably, the holographic elements was carried out using binary patterning in the form of identical grooves representing the same rectangular parallelepipeds.

As noted earlier, the number of holographic elements can reach 10 6or more. The total area occupied by these elements on the surface of the waveguide layer is several square millimeters. Holographic elements locally change the refractive indices of the light in the waveguide layer. It is clear that if the sizes of the elements does not exceed half the wavelength of light, a parameter such as the density of elements on the surface of the waveguide layer, can be used to control the propagation of the light beam. This means that after passing through the CPG and after spatial redistribution in CPG light emitted from the laser medium, is converted into a light beam with the desired parameters, which are determined by the structure and topology of figure CPG.

The formation method and principle of the calculation of the topology CPG described in U.S. patent No. 7872788 issued to Vladimir Janikowo 18 January 2011 on the method of digital processing of optical waves in integrated planar optical device that operates on the principle of digital planar holography, as well as in U.S. patent No. 7929190 issued to Vladimir Janikowo 19 April 2011 on integrated planar optical device based on digital planar holography.

Digital planar holograms that can potentially be used to control the direction and the transformation is the use of light beams, propagating in the planar waveguide environments, significantly differ in the topology of their drawings, which is determined by the function of the CPG. In the present invention, the topology of figure CPG is set by a function of the desired distribution mod emitter, which determines the restructuring of the distribution of modes in space, selection and amplification of one or more selected modes.

The laser medium and the device adjustment mode patterns can both be mounted on a common Board, made for example from silicon, silicon dioxide, or quartz. To stabilize the temperature in the laser medium high power, the total charge may be made from a material with high heat conductivity and can be equipped with a thermoelectric cooling device.

Widely-emitter laser medium with an active emitter layer and based on CPG unit adjustment mode structure coplanar with respect to each other and are mounted on a common Board.

The gap between the open end of the laser medium and the butt-end of the waveguide to the structure of the CPG in the order of magnitude is close to the wavelength of the emitted light. It is clear that in the above-described construction, the device adjustment mode structure based on CPG, plays the role of a specific non-transparent mirrors with quasi parameters, distributed in the plane in which Nevada in accordance with the above-mentioned predetermined function, used to select, realignment and strengthening of fashion.

In the well-known widely-aperture laser medium which is provided with the usual opaque mirror and does not have the above mentioned device adjustment mode patterns based on the CPG, the output beam has a multimode structure, which consists of several tens or even hundreds of different transverse side modes of varying intensity.

The situation changes significantly if the laser medium is optically associated with a specific device adjustment mode structure on the basis of CPG performed in accordance with the present invention. This is because the adjustment device mode structure reduces the number of modes to three, two or one. The result is a powerful fashion (fashion) low order, and the main part of output power of the laser focus in this mod (the mod) low order, while the rest much smaller part of the laser power is kept the remaining lateral modes, the total number of which is reduced in several times: up to three, two or one. The angular divergence in the direction of the slow axis in the described procedure is reduced, for example, from 20° to 2°.

Brief description of drawings

1A is a block diagram of a known optical system with multimode laser medium and collimating optic is.

Fig.1b is a block diagram of a system adjustment mode structure made in accordance with the present invention, in which the adjustment device mode structure on the basis of CPG functions as a mirror total reflection and is located on the optical closed end of the resonator.

Fig.2a, 2B, 2C, 2D, 2D, 2E and 2ZH - simplified in terms of the device to rebuild the modal structure of the present invention, which illustrate the interaction of the selected modes of laser radiation with appropriate "pictures" of the device for adjustment mode structure on the basis of CPG, where Rise shows the total figure CPG obtained by overlaying images CPG is shown in Fig.2a, 2B, 2C, 2D, 2E and 2F.

Fig.3 is a vertical section of the laser diode of the present invention, in which the device for adjustment mode structure on the basis of CPG is used as a mirror total reflection.

Risa - photography with a 20-fold increase, which shows the final pattern of the elements of the device for adjustment mode structure on the basis of CPG shown in Rise.

Risb - the same figure that Rise, but obtained with 200-fold magnification.

Resv - picture elements of the picture CPG is shown in Risa and 4B, but taken with an electron microscope (scale shown at the bottom of the hour and of the figure).

Fig.5 is a view in plan of a laser diode with enhanced brightness in accordance with the invention, in which the adjustment device mode structure on the basis of CPG is used as a mirror total reflection.

Fig.6 is a graph illustrating the angular dependence of the light intensity distribution in the far field for a known system shown in Fig.1a.

Fig.7 is a graph illustrating the angular dependence of the light intensity distribution in the far field for the system (Fig.1b, 3 and 5)which, in accordance with the invention is equipped with a device adjustment mode structure.

Detailed description of the invention

Below for a definition of terms used in the present description. The term "laser medium"used in the context of this application, refers to the portion of the light-emitting device of the laser type, such as a laser diode, which forms the above-mentioned device in combination with the corresponding partial mirror reflection. Further, although the mode structure is considered in the description generally, all the following modifications apply to transverse modes. Mode structure of laser diodes largely depend on the geometry of the optical cavity. For example, in the vertical direction of the light propagation is limited to a very thin layer, casinocomodoro less than the wavelength, and therefore in the direction perpendicular to this layer, the design generates only one optical fashion. However, designs with waveguides, which in the transverse direction is much larger compared to the wavelength of light, allow in this direction, a plurality of optical modes. In the latter case, such a laser is called "multimode".

For a better understanding of the method proposed by the present invention, first consider the optical system of the laser device suitable for implementing the present invention, and how it differs from systems of ordinary laser diode.

1A illustrates a block diagram of a conventional optical system 20a, containing multimode widely-appertures laser diode 22a with collimating optics 24a. Multimode widely-appertures laser diode 22a is an active laser medium 26a and is located between the output mirror partial reflectance 30a and the total reflection mirror 28a. In the design of the multimode laser diode 22a mirrors 28a and 30a form an optical cavity 32a. Position 25a denotes an emitter laser diode 22a located on the output side mirror with partial reflection 30a. All these components are installed on the supporting substrate 31. In the cavity 32a light released from the active laser medium 26a, repeatedly otra is moved between the mirrors 28a and 30a, enhancing stimulated emission. Beam B, which emerges from the laser diode, collyriums optics 24a, resulting in a collimated output beam B1 (see Fig.1a).

Described above and shown in Fig.1a system 20a is well known and is used in laser technology. The applicant has found that in addition to the function of light reflection one or both mirrors 28a and 30a can give your system the function of the device for adjustment mode patterns. This new feature provides perezarazhenie all mod rays of the laser medium 26a to stabilize the wavelength, for synchronization of the phase adjustment mode patterns suppression modes of high order, and to strengthen the lower order modes with low divergence and even one fashion with the lowest divergence, resulting in the brightness of the output beam B is increased.

Further, in accordance with the invention, the system components used to achieve the specified function adjustment mode patterns and other functions, can be made in the form of optical components digital planar holograms, generated by computer, and built-in planar waveguides known methods of mass production, such as binary nanolitography or nanopaste. The result can be obtained system adjustment mode patterns 120a, of the type shown in Rib In the context of the present invention, the term "system adjustment mode structure" encompasses a modular device consisting of optically-active laser medium, a planar waveguide, which contains the adjustment device mode structure based on CPG, and at least one mirror total reflection.

In the system adjustment mode patterns 120a those components of the optical beams with the rebuilt mod, which correspond shown in Fig.1a, will hereinafter be denoted by the same designations, but with the addition of numbers to 100. For example, the system 120a consists of the laser medium 126a and the output optical device 124a, which controls the beam B2, coming out of the laser medium 126a, and produces an output beam B (Fig.1b), emerging from the output end 127a of the system. In contrast to the known system shown in Fig.1a, the system 120a includes a device adjustment mode patterns 130a, made with the use of CPG.

To narrow spectrum radiation, the synchronization of the phases of the transverse modes and to suppress side modes while increasing fashion or fashion inferior laser medium 126a optical paired with a new optical component, namely based on CPG unit adjustment mode patterns 130a, which executes the specified new function adjustment mode article shall ucture and gain mod. In other words, after integration on a common reference Board 120a active laser medium 126a and based on CPG device realignment mod 130a form a single optical chip. Optical coupling and interaction between the laser medium 126a and based on CPG device realignment mod 130a is carried out in a known manner the optical end-coupling between two planar waveguide optical media.

System 120a also includes a partial mirror reflection 128a. Laser medium 126a, based on CPG unit adjustment mode patterns 130a and the mirror with partial reflection 128a form an optical cavity 132a. In the optical cavity 132a light received from the active laser medium 126a, is reflected many times between based on CPG unit adjustment mode patterns 130a and a mirror with a partial reflection 128a, which leads to increased emissions. Thus, in addition to the main function of the choice of modes based on CPG unit adjustment mode patterns 130a also performs the function of a mirror with a complete reflection of the light. The above-mentioned strengthening of emission of radiation can also be achieved by the suppression of side modes and the gain of fashion or fashion low order. In the result, the output radiation acquires coherence and increased brightness by reducing the spatial is shademode rays.

In the system 120 based on CPG unit adjustment mode patterns 130a has a complex hierarchical topology, which in the approximation can be considered as a figure formed by standard binary nanoelements (for example, obtained by plasma etching rectangular grooves)formed in the waveguide layer of the planar waveguide to modulate an effective refractive indices of the light. Each binary nanoelement is defined by three dimensions: width, length and depth. The width of these nanoelements does not exceed a few tens of nanometers, a length less than the wavelength of the laser light interacting with these grooves, and the depth less than the thickness of the waveguide layer of the planar waveguide.

Since the laser beam is confined within the planar waveguide, he is forced to propagate through the structure CPG optically interact with it and be reflected in the opposite direction. This leads to the transformation of the mode structure, which leads to suppression of the modes of high order and, consequently, to increase the brightness of the light emitted by the system. This occurs for the following reason. CPG is a binary system with a main member of the k Fourier decomposition, which is close to twice the wave vector of the laser light. The decomposition in Fourier series of any binary article shall ucture contains modes of higher order, however, the most important are the Fourier satellites that are close to the main component. The presence of the figure of CPG elements responsible for the appearance of such satellites, provides the excitation of the reflected wave, representing the first transverse mode, or any other desired distribution. In a first approximation, binary lines are located on the imaginary traces of interference rings, which are undesirable multimode light emitted from a laser. This light contains the first diverging transverse mode and many converging fashion. All these modes have the same phase at the end of the laser medium. It is clear that since the hologram is formed millions of elements, these elements can be combined and grouped in numerous specific drawings.

In accordance with the invention, each based on CPG device realignment mod is formed as a combination of multiple holographic elements, i.e. nanoceramic embedded in a planar waveguide with periodic modulation of its coecients light refraction. The modulating function is calculated based on a set of optical transfer functions selected for the specified device adjustment mode structure and implemented methods acceptable for mass production, such as nanolitography or on opacity. Numerous nanoelement (for example, in the range from 10⁵up to 10⁶) can be combined into a complex superposition of the drawings, each of whom is responsible for specific optical transfer function.

Each figure represents a group of elements CPG chosen in a special way to perform a specific function based on CPG device adjustment mode patterns. All drawings are placed on the same planar surface, forming the final pattern, the pattern of the hologram is necessary to perform the desired functions.

Each target picture (pattern) is generated as a mathematical superposition of elliptic, parabolic or hyperbolic drawings corresponding to the desired rebuild the mod, with spatial approximately half-wave period. Namely, first created duchessina analogue of the generating function A(x,y), representing the imposition profile of modulation of the refractive index of light. Each modulating function corresponds to the equivalent of the picture. At this stage duchessina function A(x,y), which resembles the profile of refractive index in planar waveguide corresponding to the desired optical transmission functions. The next step is to binarize dvukhyadernoj analogue of the generating function A(x,y), the which was received in the previous step. Binarization is achieved by the introduction of threshold values and the order of the values 1 all sites that exceed a certain threshold, and the value 0 to all other sites. This is done to obtain digital dvukhyadernoj generating function B(x,y). In the next step, the islets of complex shape in the function B(x,y) with values of 1 are simplified for presentation in the form of a combination of standard microlithographic or nanolithographically elements (short and rectilinear grooves). This operation is accompanied by a transformation in the function C(x,y). The last stage is the lithographic manufacture of standard nanoelements methods of micro/nanolithography or nanomachine using the function C(x,y) to calculate the required depth of the grooves in the planar waveguide.

In Fig.2a, 2B, 2C, 2D, 2D, 2E and 2ZH, representing the species in the plan shows a simplified scheme of the device adjustment mode patterns. The drawings show the interaction between selected modes of laser radiation using the corresponding holographic images based on CPG devices rebuilding mode patterns, where Rise corresponds to the final "pattern"received by the overlay of patterns corresponding Fig.2a, 2B, 2C, 2D, 2E and 2F.

More specifically, each of the holographic image, presented in Fig.2a, 2B, 2C, 2D, 2E and 2F, illustrates the interaction in the curse of the modes of the laser radiation with the corresponding topographic patterns, which in reality are combined into a single final holographic image shown in Rise. In other words, at each of the specified figure, the system as a whole is indicated by the position 220a and consists of a multimode laser 220 and the corresponding holographic patterns selected from drawings from 222a to 222f.

Laser medium multimode laser 220 emits multimode beam 221, which has a complex structure consisting of several modes. The output beam can be represented as a combination of components of the rays emitted from the narrow active areas, of which generated laser medium. The width of these zones is selected so that the average beam from each zone was single.

Components 220a and 220b multimode beam 221 extend to the end of topographical drawing and reflected from the pattern 222a in the planar waveguide, resulting in optical interaction (coupling) of the respective sections or component volumes 1a and 2a of the active medium (Fig.2a). As a result of this component volumes emit single-mode beams, without which the above optical mates would not be single-mode, because the optical interaction provided by the hologram causes the laser to emit in the same fashion. In the ideal case, the output beam should have the same the most options, as the beam emitted from the single-zone, however, its capacity will be doubled. As a result, the brightness of the combined optical beam interaction will also be doubled. In reality, the zoom factor is not equal to two, but will have close to two magnitude as the losses will be minimized through the use of waveguide high transparency and mechanical connection of optical components, which is characterized by low losses.

As is known, single-mode laser cavity must satisfy the following condition:

,

wherea- aperture laser, λ* is the wavelength of the radiation inside the resonator) and L is the length of the resonator.

The size of the single-mode zone in wide-aperture laser diode can be calculated by the formula (1).

The total number of single-zone N can be calculated as follows:

where a is the width of the widely-aperture active medium and provided the following condition:

For typical values of the parametersandand While the number of single-mode component of the zones varies from N~3÷30, where the parameter N determines the number of images imposed on each other to obtain the final holographic pattern.

For example, consider an imaginary laser) which includes three-mode beam, in which each mode is independent component. Figures 2A, 2B, 2C, 2D, 2E and 2F illustrate the operation of the system which contains a structure consisting of six topographic patterns A, B, V, 222G, D and E, respectively. In Fig.2a component beam 220a corresponds to the area 1a and the component beam 220b corresponds to the area 2a. To simplify the drawings, 2B, 2C, 2D, 2E and 2F component rays in these figures are not marked, but are summarized in the following Table 1, which shows the optical interaction of the beams in the resonator (figure 2 resonator not shown).

All holographic images are superimposed on the same planar surface, forming a final total figure, where each holographic element works to provide the best synergy of all requested features. In General, for the structure shown in Rise end figure 222N and with the number of N single-mode zones, generating single-component rays a', 200b', and 220c' to 220N', the required number of holographic images can be calculated as follows:

- component beam 220a' should be paired with the number N of modes, including samostiynichestva;

- component beam 220b' should be paired with a number N-1 mod because he has already collaborated with fashion beam 220a';

- component beam 220c' should be paired with the number N-2 of the mod, because he has already collaborated with fashion beams 220a', 220b', etc.;

finally, the component beam 220N' should be paired with himself, because he has already collaborated with fashion all other beams.

Therefore, the total number of images m is the sum of the following arithmetic progression:

that is,

As mentioned above, based on CPG unit adjustment mode patterns can be used as a mirror total reflection is whether as a mirror with a partial reflection. This modification can be obtained by changing the length of the adjustment device mode structure, and the short end figures reflect the beam only partially, and the reflection coefficient increases with the length of the structure, and after saturation is no longer increases and does not depend on the extension, i.e. forms a component of total reflection.

As follows from the above formula (5), with increasing aperture size of the laser, the number of holographic images is increasing in arithmetic progression.

Figure 3 shows the light emitting device of the present invention in cross section. In this figure, the device generally indicated by the position 400. View in plan of the device shown in Fig.3 Fig.5. The device 400 comprises a laser medium 402 installed on the auxiliary substrate 404, which is made, for example, of silicon, and from special based on CPG device adjustment mode patterns 406, which is formed on a silicon substrate 408 and corresponding to a particular application of the device. Both components 402 and 406 are installed on the circuit Board 410, which may also be made of a suitable material of high thermal conductivity, such as ceramics.

As will be shown below, in combination with mirrors laser medium 402 emits multimode beam and has a relatively wide emit the R 412 with a width in the range from 10 to several hundred microns. The height of the emitter can be from about 0.2 nm to few microns. The active laser medium 402 (3) is limited to one side of the mirror 416 partial reflection, and on the other end 424 coated 418, which has a low reflectance (R<0.1%).

Based on CPG unit adjustment mode patterns 406, which is formed on a silicon substrate 408, consists of (1) lower shell 420 (e.g., SiO₂), having a thickness of from several to several tens of microns and (2) the waveguide layer 422, laid on the bottom shell is made of silicon dioxide, doped with such materials as germanium, which increases the refractive index of the waveguide layer on a value of from 1 to 5%. The waveguide layer has a thickness of from several tens of nanometers to one micron and a refractive index greater than the shell layer (Fig.3). If necessary, the waveguide layer 422 may be additionally stacked upper shell with a refractive index lower than that of the waveguide layer.

Based on CPG unit adjustment mode structure 406 (Fig, 3) is formed as a total reflection mirror, while the mirror 416 partial reflection functions as the emitter of the laser medium 402. Coating with a low reflectance 418 is placed between based on CPG device p is Restrike mode structure 406 and a laser medium 402. Laser medium 402, the device adjustment mode structure 406 and a mirror with a partial reflection 416 form a cavity.

Position 426 indicates the environment of high transparency (optical glue or gel, which fills the space between the coating with a low reflectance 418 and the input/output end of the CPG 423. A transparent medium (optical glue or gel) 426 has a light refraction index close to the refractive index of light in the waveguide layer 422. The connection between the input/output end of the CPG 423 and end 424 of the laser medium by a known method optical end connection between two optical planar waveguides.

The core 422 based on CPG device adjustment mode structure 406 includes multiple holographic elements in the form of grooves 428, which has a depth not exceeding the thickness of the waveguide layer. It is desirable that the elements were made in the form of rectangular grooves, representing a binary nanoelement suitable methods for forming the patterning or nanopaste.

As mentioned above, the number of items exceed 10⁶. The total area occupied by these elements on the surface of the waveguide layer is several square millimeters. Rise, 4B and 4C - pictures holographic elements, obtained poverhnosti based on CPG device adjustment mode patterns, used as a mirror total reflection of light. Figure 4A is a photograph obtained with a 20-fold magnification optical microscope. Rib photo of the same picture holographic elements or grooves 428 obtained with 200-fold magnification, and Riv - photograph of the same elements 428, obtained using an electron microscope (scale shown in the lower part of the figure).

From Risa, 4B, 4C can be seen that the topology of holographic images is irregular in nature, i.e. grooves 428 (3), although the same width, have different lengths and uneven density distribution area. Grooves CPG 428 locally change the refractive indices of the waveguide layer. Because the size of the elements is not greater than the wavelength of light emitted by the laser, the density of elements on the surface of the waveguide layer can be used to control the density of the optical beam. This means that the light beams B1, B2 and B3 (Fig. 5)that come in based on CPG unit adjustment mode structure 406 of the laser medium and processed in the device, is converted into the beam B'having the required parameters, which are determined by the particular purpose of the device 400 as a whole.

When the device 400, the light emerging from the laser medium 402, is reflected many times in the cavity between the mirror an hour the ranks reflection 416 of the laser medium 402 and based on CPG unit adjustment mode patterns 406, the boost function is fashion or fashion low order, suppressing lateral fashion and thereby increasing the brightness of the beam B', leaving the system.

As noted above, the laser medium 402 and based on CPG unit adjustment mode patterns 406, both mounted on a common circuit Board 410, made, for example, of silicon, of silicon dioxide or quartz. To stabilize the temperature in the laser medium high power General Board 410 may be made of a material with high thermal conductivity and is equipped with a cooling device.

Laser medium 402 and based on CPG unit adjustment mode structure 406 coplanar with respect to each other so that the optical axis X-X of the laser medium (i.e. the active emitting layer of the resonator) coaxially with the optical axis of the waveguide layer and the corresponding axis of the CPG, i.e. with the axis of symmetry X1-X1 (Fig.5).

Optical beams B1, B2 and B3 come in based on CPG unit adjustment mode structure 406 of the laser medium through the optical adhesive or gel 426 having a refractive index of light similar to that in the coefficient of the waveguide layer 422.

In known laser medium, which has the above-described geometry and equipped with a mirror and a partial reflection (<10%) and total reflection mirror instead of the proposed device adjustment mode structure 406, and output the second beam B (1A) has a multimode structure, which consists of several tens or even hundreds of different transverse side modes of varying intensity.

Some of these modes, for example, from several to several dozen, will have approximately the same intensity. In the far zone of the beams B emitted from the laser, such as shown in Fig.1a laser diode 22a, will have a significant divergence in the direction of the slow axis, which can reach tens of degrees.

The situation changes significantly if the laser medium is optically associated with a specific device adjustment mode structure on the basis of CPG 130a, made in accordance with the present invention. This is because the device adjustment mode patterns 130a reduces the number of modes to three, two or one. This is shown in Fig.6 and 7, which illustrate the angular dependence of the radiation intensity in the far zone 6 corresponds to the system shown in figure 1A, and Figure 7 corresponds to the system shown in Fig.1b, Fig.3 and Fig.5 for the same laser medium, which is shown in Fig.1a, but in combination with the adjustment device mode structure on the basis of CPG 130a.

Widely-appertures laser diode manufactured by the method of the present invention has been experimentally tested, as described below.

Radiation field widely-aperture the laser is on diode 22A in the far zone is shown in Fig.6. This field has a multimode structure with the number of modes from 8 to 10, having a divergence of 20° in the direction of the slow axis.

On the other hand, from Figure 7 we can see that the optical interaction device adjustment mode patterns 130a (Fig.1b, 3 and 5) significantly alters the structure of the output beam, thus forming a powerful fashion low order, while significantly smaller part of the laser power falls on the two side of fashion.

Therefore, the total number of modes is reduced to three, while further improving the structure of adjustment modes can be reduced even up to one fashion. In the system of the present invention such a shift in the fashion typical of the far zone. The angular divergence in the direction of the slow axis is reduced four times, i.e. from 20° to 5°.

Thus, the method of manufacturing a laser diode according to the present invention with improved brightness radiation consists of the following steps: provide a widely-emitter laser medium, which has an active emitter layer with a first end and a second end, the adjustment device mode structure based on CPG, which consists of a waveguide layer and at least one shell and many nanoelements having a depth less than the thickness of the waveguide layer and sizes, smaller than half the wavelength of the light from ochomogo laser medium, thus nanoelement are in accordance with the figure, which carries out beforehand set function and locally changes the refractive index of light in the waveguide layer;

form a semitransparent mirror on the specified second end of the widely-emitter laser medium; and

form the resonator alignment position of the specified first end of the widely-emitter laser medium with the waveguide layer device adjustment mode structure based on CPG.

Mentioned laser diode with high brightness radiation consists essentially of the laser medium, based on CPG device adjustment mode structure, which functions as an opaque mirror at the first end of the active emitting laser, and the semitransparent mirror at the second end, which is radiated from the laser light of high brightness.

Although the invention has been shown and described with reference to a specific construction, it is obvious that this example was given only as illustration, and that any valid changes and modifications of the above structure, if they are not beyond the scope of the claims. For example, the system may be made without mirrors, both of which will be replaced by the CPG.

1. A method of manufacturing a laser diode with high brightness radiation, which is that form widely-emitter the Y. the laser medium, able to generate multimode optical radiation, which has an active waveguide emitting layer, a first end and a second end; forming a partially transparent mirror at the second end of the common-emitter laser medium; place widely-emitter laser medium with a partially transparent mirror on a substrate with high thermal conductivity, characterized in that, to increase the brightness of the radiation form the device adjustment mode structure based on digital planar hologram having an input end, and the specified device is formed by forming a digital planar hologram at the first end of the common-emitter laser medium in optical interaction with it, use digital planar hologram as an opaque mirror, placing it on the same substrate, where the laser medium, resulting in the optical resonator, and exercise selection, restructuring and strengthening of the modes of the optical radiation of the laser diode according to a given function.

2. The method according to claim 1, wherein the adjustment device mode structure formed from the waveguide layer and at least one shell in contact with the waveguide layer over its entire surface, and many nanoelements having a depth less than the thickness of the waveguide layer and the length, the smaller h is m half the wavelength of light, the emitted laser medium, and a width of from 30 nm to 160 nm, and nanoelement feature in accordance with the figure, which locally changes the refractive index of light in the waveguide layer and carries forward the specified function.

3. The method according to claim 1, in which the resonator is formed by the combination of the specified first end of the widely-emitter laser medium with the input face of the digital laser hologram device adjustment mode structure.

4. The method according to claim 1, in which the resonator is formed by the combination of the specified first end of the widely-emitter laser medium with the input face of the waveguide layer device adjustment mode structure.

5. The method according to claim 2, in which nanoelement are grooves made in the waveguide layer device adjustment mode structure.

6. The method according to claim 5, in which the grooves are produced by the methods of nanolithography or nanomachine in the form of rectangular parallelepipeds, allowing the manufacturer in the form of binary elements.

7. The method according to claim 6, in which grooves have this picture, which allows beforehand set function and locally change the distribution of the refractive index of light in the waveguide layer.