Electromagnetic radiation nanoamplifier |
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IPC classes for russian patent Electromagnetic radiation nanoamplifier (RU 2266596):
    
 Semiconductor laser unit and its manufacturing process / 2262171
First semiconductor laser unit capable of oscillating in stable transverse mode has multilayer structure wherein semiconductor layer of first polarity of conductivity, active layer, and semiconductor layer of second polarity of conductivity that differs from layer of first polarity of conductivity are disposed in tandem, as well as waveguide region for guiding light beam in direction perpendicular to width direction by limiting beam divergence toward width. Waveguide region includes first waveguide zone and second waveguide zone. In first waveguide zone beam is confined within active layer due to difference in refractive indices of active layer and zones on both ends by limiting active layer width; in second waveguide zone beam is confined by providing effective difference in refractive index of active layer.
Semiconductor laser unit and its manufacturing process / 2262171
First semiconductor laser unit capable of oscillating in stable transverse mode has multilayer structure wherein semiconductor layer of first polarity of conductivity, active layer, and semiconductor layer of second polarity of conductivity that differs from layer of first polarity of conductivity are disposed in tandem, as well as waveguide region for guiding light beam in direction perpendicular to width direction by limiting beam divergence toward width. Waveguide region includes first waveguide zone and second waveguide zone. In first waveguide zone beam is confined within active layer due to difference in refractive indices of active layer and zones on both ends by limiting active layer width; in second waveguide zone beam is confined by providing effective difference in refractive index of active layer.
 Method for picking active elements for injection laser emitter / 2261507
Method includes operations for measuring charging current at fixed value of optical power, emitted in given angle. Prior to measuring discharge current, number of active elements is picked. Angle of rotation of active elements relatively to one another is picked in plane, perpendicular to emitter axis. Radiation strength of active element in directions relatively to emitter axis is measured along circle for several angles. Sum of forces of emission of active element along all angles along circle is determined for each direction. Relation of required strength value to received sum for each direction is determined. Operation for selection of active elements for emitter are repeated. On basis of results of last measurements share of force of emission of active element is determined in each direction. Charge current of active element with typical values of emission spreading in characteristic planes is set. Strength of active element in angle is measured. Fixed value of power of active element in angle is selected. Active elements are selected again for other emitters.
 Injection laser / 2259620
Proposed laser that can be used, for instance, as optical radiation source for pumping optical fiber laser amplifiers and solid state lasers has separate limiting heterostructure incorporating multimode waveguide whose limiting layers function at the same time as p and n emitters of equal refractivity; active region having at least one quantum-size active layer and disposed in waveguide whose thickness meets expression Γ0 QW/Γm QW > 1.7, where Γ0 QW and Γm QW are optical limiting factors for active region of zero-mode and mode m (m = 1, 2, 3 ...), respectively; reflectors; optical faces; ohmic contacts; and optical resonator. Active region is disposed in additional layer whose refractivity is higher than that of waveguide layer and whose thickness and location in waveguide are dictated by mentioned expression that must be satisfied. Distances from active region to p and n emitters does not exceed diffusion lengths in waveguide holes and electrons, respectively.
 Light-emitting structure and method for manufacturing light- emitting structure / 2257640
Proposed method includes sequential growing of following layers on GsAs substrate by GaAs molecular-beam epitaxy: GaAs buffer layer; lower emitter layer basing on AlGaAs compound; lower part of GaAs waveguide layer; active region formed at substrate temperature of 350 - 380 °C by sequential deposition of GaAsN/InGsAsN superlattice of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, incorporating at least one GaAsN layer and at least one InGsAsN layer, central InAs layer, 0.3 - 0.5 nm thick, GaAsN/InGaAsN superlattice incorporating at least one GaAsN later and at least one InGaAsN later of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, ratio of Group V element currents to group III ones being 1.5 - 5.0, upper part of GsAs waveguide layer, and upper emitter layer based on AlGaAs compound; GaAs contact layer. Proposed light-emitting structure is characterized in affording radiation wavelength of 1.30 to 1.55 μm and has GaAs substrate whereon following layers are grown: GaAs buffer layer; lower emitter layer formed of alternating AlAs and GaAs layers; GaAs waveguide layer with active region in the form of two GaAsN/InGaAsN superlattices abutting against central InAs layer; upper emitter layer based on AlGaAs compound; and GaAs contact layer; each of mentioned superlattices has at least one GaAsN layer and at least one InGaAsN layer.
 Method for generating coherent electromagnetic radiation and dipole nanolaser built around it / 2249278
Proposed method designed to generate coherent electromagnetic radiation and width of its spectral line for mentioned lasers includes introduction of metal or superconductor nanoparticles in its system of hyperfine semiconductor layers and excitation of electrical dipole vibrations using electrons of mentioned nanoparticles.
 The emitter semiconductor laser injection / 2241287
The invention relates to laser technology and can be used to make powerful, with a uniform radiation pattern, the emitter semiconductor laser injection pulse mode with normalized power radiation in a solid angle with divergences in two mutually perpendicular directions
 yandxexceeding the divergence of the radiation used blocks laser diodes respectively in planes perpendicular to the and parallel|| planes of their p-n junctions at the level of 0.5
The emitter semiconductor laser injection / 2241287
The invention relates to laser technology and can be used to make powerful, with a uniform radiation pattern, the emitter semiconductor laser injection pulse mode with normalized power radiation in a solid angle with divergences in two mutually perpendicular directions
yandxexceeding the divergence of the radiation used blocks laser diodes respectively in planes perpendicular to theand parallel|| planes of their p-n junctions at the level of 0.5
 The radiation source / 2239924
 Laser device with nitride semiconductor and a method of forming electrodes for him / 2238607
The invention relates to a laser device with nitride semiconductor
Heterogeneous substance (heteroelectric) for acting on electromagnetic fields / 2249277
Proposed substance related to materials acting on electromagnetic fields so as to control and change them and can be used for producing materials with preset optical, electrical, and magnetic characteristics has in its composition active-origin carrier in the form of clusters of atoms, nanoparticles, or microparticles, its insulating function being checked in the course of manufacture; this function is characteristic controlling interaction between substance and electromagnetic field.
 Magnetic materials / 2244971
Memory element has nanomagnetic materials whose axial symmetry is chosen to obtain high residual magnetic induction and respective coercive force. This enlarges body of information stored on information media.
 The method of producing nanotubes vanadium oxide / 2240980
The invention relates to methods for new allotropic form of oxides, in particular, vanadium oxide, which can be used as catalysts, cathode materials, power sources, ion exchangers, in viscoelastic capacitors
 Infrared nonlinear optical material / 2231817
 The method of formation of silicon nanostructures, lattice silicon quantum wires and devices / 2173003
The invention relates to a method of formation of quasi-one-dimensional solid silicon nanostructures
Magnetic materials / 2244971
Memory element has nanomagnetic materials whose axial symmetry is chosen to obtain high residual magnetic induction and respective coercive force. This enlarges body of information stored on information media.
Heterogeneous substance (heteroelectric) for acting on electromagnetic fields / 2249277
Proposed substance related to materials acting on electromagnetic fields so as to control and change them and can be used for producing materials with preset optical, electrical, and magnetic characteristics has in its composition active-origin carrier in the form of clusters of atoms, nanoparticles, or microparticles, its insulating function being checked in the course of manufacture; this function is characteristic controlling interaction between substance and electromagnetic field.
 Electromagnetic radiation nanoamplifier / 2266596
Novelty is that metal, such as silver, nanoparticles whose plasma resonance frequency is close to frequency of transfer of mentioned active particles to inverted population level are additionally placed in prior-art amplifier on quantum (active) points.
 Sensor component incorporating nanomagnets / 2274917
Proposed sensor component that uses axial symmetry to impart magnetic properties to materials has magnetic material in the form of nanomagnets whose sides measure 40 - 500 nm and thickness is 3 - 10 nm; they function as zero-hysteresis superparamagnetic components.
 Semiconductor nano-structure with composite quantum well / 2278072
Semiconductor nanostructure contains quantum well with two-dimensional electron gas, made in form of layer of narrow-zoned semiconductor i-GaAs with forbidden zone Eg1 having thickness d1 and levels of dimensional quantizing Em1 - main and Ep1 - excited, sandwiched between two layers of semiconductor AlxGa1-xAs with forbidden zone Eg2>Eg1 and main level of dimensional quantizing Em2 having thickness d2 each, which is positioned between two barrier layers of wide-zoned semiconductor i-AlAs with thicknesses temperature and differentsp and forbidden zone Eg, one of which contains δ-Si layer of admixture at distance t* from hetero-boundary i-AlAs and i-AlxGa1-xAs, and second one consists of non-alloyed i-AlAs spacer and layer AlAs(Si) alloyed homogeneously by silicon and layer i-GaAs covering the nanostructure. In composite quantum well of semiconductor nanostructure, formed on poly-insulating substrate GaAs(Cr) in form of serial layers i-GaAs(buffer)/i-AlAs(δ-Si)/i-ALxGa1-xAs/i-GaAs/i-AlxGa1-xAs/i-AlAs. By special selection of parameters Eg>Eg2>Eg1 and relation d1/d2, condition Em2<Ep1 is maintained as well as localization of two-dimensional electrons with maximum in center of symmetry of composite quantum well on levels Em1 and Em2.
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FIELD: optics; coherent electromagnetic radiation systems. SUBSTANCE: novelty is that metal, such as silver, nanoparticles whose plasma resonance frequency is close to frequency of transfer of mentioned active particles to inverted population level are additionally placed in prior-art amplifier on quantum (active) points. EFFECT: enhanced gain for low and high strengths of fields being amplified. 1 cl, 2 dwg, 1 ex
The invention relates to the field of optics, in particular for the amplification of coherent electromagnetic radiation (EMR), and can be used, in particular, to obtain a powerful coherent fields AMY, as well as for pre-amplification of weak signals AMY for their detection. Known solid-state amplifier coherent AMY neodymium-glass [1]. The disadvantages of this amplifier is its small gain, which, in particular, limits the spectral range of the gain saturation gain at relatively high powers of the amplified field of the EMP and its relatively large size. Also known laser amplifier coherent AMY on quantum dots, comprising a semiconductor base, the matrix carrier with the active particles, which can be inverted population of energy levels, and a conductive layer [2], selected as a prototype of the present invention. The disadvantages of this amplifier are its low gain and the saturation gain at relatively high capacity strengthening field AMY. The purpose of this invention is to remedy these disadvantages and significant increase in gain for both small and large (saturating) intensities of the amplified field AMY. The decree is fair, the goal of the proposed nanosilicate electromagnetic radiation by in the known amplifier comprising a semiconductor substrate, the matrix carrier with the active particles, which can be inverted population of energy levels, and a conductive layer in the specified matrix carrier additionally placed a metal, such as silver nanoparticles, with the plasma resonance frequency close to the transition frequency of these active particles at the level of the inverted population, so that these active particles and the nanoparticles form a pair, in which the distance between the active particles and nanoparticles is less than or of the order of the wavelength of electromagnetic radiation, for which gain is proposed amplifier. The essence of the invention set forth in the following description. Figure 1 presents a schematic representation of the proposed nanosilicas EMP where: 1 - quantum dots (active particles), 2 is a semiconductor, for example n-type, base, 3 - the matrix-media 4 - layer conducting polymer, 5 - metal nanoparticles, such as silver. Figure 2 presents the dependence of the normalized gain for the proposed nanosilicas from the values of I/Isat., where I is the intensity of incident radiation, Isat.- the intensity of the incident radiation, n is and where there is a saturation in the curve of the dependence of the gain on the intensity of the incident radiation amplifier AMY without nanoparticles. (Per unit adopted the gain of the amplifier, AMY without nanoparticles at zero intensity of the incident radiation). The numbers on the box 2 is indicated above according to the distances between the quantum dots and nanoparticles in these pairs: (solid line), 1 to 9 nm, 2 - 10 nm, 3 - 11 nm. The dashed curve shows the dependence of the amplifier without nanoparticles. Amplification of electromagnetic radiation in the proposed nanosilicate AMY is as follows: Electromagnetic radiation E, incident on the specified nanosilicon with nanoparticles of metals (particularly silver) (see Figure 1), causing oscillations of free electrons of these nanoparticles. Since the excitation of these oscillations has a resonant character on the plasma resonance frequency determined by the nature of the material, the shape and size of these nanoparticles and the nature of the material of said matrix carrier, and the said selected frequency is close to the transition frequency of these active particles at the level of the inverted population, these fluctuations are supported by the pump energy supplied to the active particles through the near field from an external source through an electric field applied between the semiconductor specified reason and specified conductive layer. Since the polarizability of the metal n is necessity a lot more of the polarizability of the active particles (due to the large number of free electrons in the specified nanoparticles), the gain medium consisting of placed in the specified matrix of these pairs (nanoparticle-active particle), is, accordingly, more of the gain medium consisting of placed in the specified matrix only active particles. The polarizability of the specified pair is calculated taking into account their interaction through the near field and taking into account the saturation of the transition of the active particles on the inverse of the level. Calculations show that the polarizability increases with the polarizability of the active particles due to the contribution from the nanoparticles and the energy of the near field, which increases with decreasing distance between the particles in the specified pair. The latter is limited from below by the sum of the characteristic size of the particles in the pair. When this saturation amplification does not occur, as there is no saturation of the linear polarizability of metallic nanoparticles included in the specified pair. The results of calculations are presented in figure 2 for different distances between the particles in the pair. As can be seen, the gain in the presence of nanoparticles for weak reinforced fields AMY increases several times as compared to the case without nanoparticles and remains finite for strong (saturating) fields. An example of the implementation of the proposed nanosilicas: On the polished silicon base is (2) (see 1) known method creates an ultra-thin layer of semiconductor structures based on gallium arsenide. On the surface of the specified layer is made of a lithographic structure formation with lateral constraint to create items with the geometry of quantum dots (1) with a diameter of 30 nm, which are periodically distributed with a pitch of 70 nm. This structure is obtained by using electron-beam lithography and liquid-phase etching. Then, on the resulting structure is coated with a layer (3) of the n-type semiconductor (silicon) of a given thickness. On this layer napylyaetsya pre-manufactured metal nanoparticles (silver) (5). Further, the surface layer of the specified n-type semiconductor tarasivets conductive polymer (4). After that, between the specified base (2) and a polymer layer (4) applied voltage, sufficient to ensure that the threshold current of the pump. Strengthening AMY is observed in places where the distance between the quantum (active) points and deposited nanoparticles is small enough, so are the threshold conditions. These places are recorded and then cut out from the thus created patterns. On the surface of the cut pieces are put electrical contacts. Each received on this technology, the fragment is nanosilicate electromagnetic radiation frequencies close to the plasma the military frequency used in the manufacture of metal nanoparticles. Then from nanosilica is made active amplifying medium with a given concentration of nanosilica, for example, placing her in the conducting polymer on the surface of which is applied to the electrical contacts. Literature: 1. "Handbook of lasers" Per. s angl. Edited Amerkhanov, vol. 1, Moscow, 1978, p-15. 2. D.Bimderg, M.Grundma, N.N.Ledtntsov, "Quantum Dot II", Wiley, Chichester, 1999. Nanosilicon electromagnetic radiation comprising a semiconductor substrate, the matrix carrier with the active particles, which can be inverted population of energy levels, and electrically conductive layer, characterized in that said matrix carrier additionally placed a metal, such as silver nanoparticles, with the plasma resonance frequency close to the transition frequency of these active particles at the level of the inverted population so that these active particles and the nanoparticles form a pair, in which the distance between the active particles and nanoparticles is less than or of the order of the wavelength of electromagnetic radiation, for which gain is proposed amplifier.
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