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Led lamp and lamp base, method for manufacturing thereof One main part or its surface functions as a load-bearing and basic part, a heat-removing radiator, current-carrying components, electroinsulating components, light-emitting, light-transmitting, reflecting and dissipating components; it contains luminophore in order to increase efficiency of light-emitting performance of the lamp. |
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Current rectifier module with cooled busbar system Invention is related to current rectifier module. The current rectifier module consists of at least two semiconductor power modules (2, 4), connected in thermal-conductive and mechanical way to a liquid heat-removal (6) and conductively connected by a busbar system (8) which has at least two conductor lines isolated from each other to outputs of the current rectifier module. The busbar system (8) is connected to at least one line (24) of coolant supply, at that the busbar system (8) and the line (24) of coolant supply form the united structural assembly. According to the invention by this line (24) of coolant supply additional loss power in the laminated busbar system (8) is extracted. |
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Method according to the invention involves arranging light-emitting elements in a closed field in repeating groups with virtual numbers of bunches within a group, first in forward order and then in reverse order. Series connection of light-emitting elements with like light-emitting elements within a group is carried out, for example, from the right-hand side, and between neighbouring groups on the left-hand side, with alternately adjacent conductors directed in parallel to the axis of the position of the light-emitting element in the closed field if the conductor is placed in the plane of the closed field. In case of multi-level connection of the light-emitting element under the plane of the light-emitting element of the conductor in insulating layers, the light-emitting element is connected by a connecting metal coating through the insulating layers with the corresponding conductor on the insulating layers situated on two virtual non-crossing lines on which, for example, on the left-hand side, connection with the light-emitting element is carried out within the group of light-emitting elements, and on the right-hand side between neighbouring groups in areas without conductors in previous insulating layers. The invention enables to find ways to arrange and connect bunches of light-emitting elements in an integrated circuit array thereof in order to increase density of arrangement, maintain emission of the light-emitting device when one or more bunches of the light-emitting array break down in manufacturing processes, inspection, classification, operation, and high yield of non-defective items. |
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Semiconductor radiation source Invention relates to optoelectronics and specifically to semiconductor infrared, visible and ultraviolet radiation sources. The invention can be used in designing modern lighting equipment and systems. The invention can also be used in microwave microelectronics when designing monolithic power amplifiers and in power electronics when designing monolithic converters. In a semiconductor radiation source, a radiation-generating monolithic array of p-n mesostructures on a heat-conducting dielectric substrate is placed inside a chip holder which is made in form of a device with high rate of removing heat from the chip and transmitting said heat to the entire structure of the chip holder. The chip holder, having a dielectric cover soldered with a metal base, along with the array of p-n meostructures inserted into the window of the dielectric cover and connected thereto by soldering on the edges of the window, forms an airtight cavity which is partially filled with a capillary-porous material. A single network of capillary channels is formed on the back surface of the substrate of the chip and the adjoining inner surface of the dielectric cover. The is enables multifold reduction of thermal resistance of the semiconductor radiation source and provides uniform temperature distribution across the area of the chip. Input contacts which allow reliable and easy mounting of the article are formed on the surface of the dielectric cover. |
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Light-emitting diode module and method for manufacture thereof Method of making a light-emitting diode (LED) module according to the invention involves forming an insulating film on a substrate; forming, on the insulating film, a first earthing terminal pad and a second earthing terminal pad separate from each other; forming a first separating film which fills the space between the first and second earthing terminal pads, a second separating film which is deposited on the surface of the first earthing terminal pad and a third separating film which is deposited on the surface of the second earthing terminal pad; forming a first separating layer of given height on each of the separating films; sputtering seed metal on the substrate on which the first separating layer is formed; forming a second separating layer of given height on the first separating layer; forming a first mirror which is connected to the first earthing terminal pad, and a second mirror which is connected to the second earthing terminal pad by applying a metal coating on the substrate on which the second separating layer is formed; removing the first and second separating layers; connecting a stabilitron to the first mirror and connecting a LED to the second mirror; and depositing a fluorescent substance to fill the space formed by the first mirror and the second mirror. The invention also discloses another version of the method described above and the design of the LED module. |
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Semiconductor device and method for production thereof Invention relates to semiconductor devices and methods for production thereof. In a semiconductor device, having a mounting substrate, a thin-film element formed on the mounting substrate, and a semiconductor element mounted to the mounting substrate, the semiconductor element includes a main portion and a plurality of underlying layers which are stacked on the side of the main portion of the semiconductor element facing the mounting substrate, wherein each underlying layer includes an insulating layer and a circuit pattern on the insulating layer, and the circuit patterns are connected to each other through contact openings in the insulating layers. The circuit pattern of one of the underlying layers closest to the mounting substrate has an extended portion which continues towards the thin-film element, and the thin-film element is connected to the main portion of the semiconductor element through a connecting line provided on a polymer layer, the extended portion and the circuit patterns. |
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Method to produce interconnections in high-density electronic modules In the initial stock they open windows in a layer of polymer, they fill these windows with a conducting material, they open windows in the conducting layer, they fill these windows with a polymer, after filling of the windows in the conducting layer with the polymer they separate the stock into separate parts, lay them in series into a packet and connect layers of the packet with the bearing substrate. |
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3-d integrated circuit lateral heat dissipation Invention relates to methods of dissipating heat in multilayer 3D integrated circuits (IC). By filling the air gap between layers of the multilayer IC with a heat-conducting material, heat generated in one or more regions inside one of the layers can be dissipated in the transverse direction. Transverse dissipation of heat can take place along the entire length of the layer and the heat-conducting material can be electrically insulating. Through-connections through silicon can be constructed in defined regions to facilitate heat dissipation from problematic thermal regions. |
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Powerful hybrid integral circuit of shf range Powerful hybrid integral circuit of SHF range contains electric- and heat-conducting base with protrusion, dielectric substrate with metallisation pattern on its face and ground metallisation pattern at the other side divided at least into two parts and each part is installed at the heat-conducting base at the opposite sides from protrusion, back-to-back to protrusion; at least one chip of active semiconductor is installed and fixed at the protrusion; height of the protrusion is so that exposed surfaces of chips and dielectric substrate are placed in the same plane; the protrusion of electric- and heat-conducting base is made as metalised diamond insert placed and fixed at the base depression, at that selected depression depth h ensures minimum temperature difference Δt (°C) for the chip of active semiconductor and the other side of electric- and heat-conducting base: where λ is thermal conductivity of diamond (coefficient of heat conductivity W/(m×degree)), Q is power of the chip of active semiconductor (W), polynominal coefficients are A1=-17.44331; A2=31.36052; A3=-22.21548; A4=19.01102; A5=-995.19516; A6=-4.10308×103; A7=-1.56933×103; A8=4.81737×106; A9=-1.6359×109 corresponding to depression depth h in the range from 0.001 up to 0.8 mm and thickness of depression bottom is equal to 0.2 mm or more. |
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Method for manufacture of shf 3d module Method for manufacture of SHF 3D module includes fabrication of semiconductor structures at wafer, chipping of the wafer by end-to-end cutting with accuracy of at least ±10 mcm, chip purification and realignment, depositing of insulation layer through moving masks, vacuum setting of substrates and components in them, application of fixative solvent at joints of substrates and components, visual quality control of joints closure, vacuum deposition of conductors, removal of fixative solvent, scrubbing of micro IC cards, vacuum drying, burn-in testing and functional check of micro IC cards, their assembly into a stack, application of fixative solvent at joints between micro IC cards, vacuum deposition of conductors at the module edges, removal of fixative solvent, scrubbing of module, vacuum drying of the module, placement of the module into a prefabricated sheath, installation of primary outputs, filling of the sheath with powder, vibrocompaction, sealing, final check-up and packing of the module. |
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Method for manufacture of 3d electronic device Method for manufacture of 3D electronic device includes check-up of active components at the wafer, chipping into active components, purification, manufacturing of substrates for grouped micro IC cards, setting of components into openings in substrates for grouped micro IC cards, depositing of conductors to grouped micro IC cards, burn-in testing and check-up of components included into grouped micro IC cards, cutting out of fit micro IC cards and their assembly into a stack, depositing conductors at edge of the stack, installation of primary outputs, making heat sink, sealing of the device, final check-up and packing. |
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Method of forming light-emitting arrays Method according to the invention involves parallel arrangement of sets with a given number of series-connected light-emitting elements in a light-emitting array. In the integrated field of the light-emitting array, the sets are arranged vertically parallel to each other and are connected to power buses connected in between an arranged horizontally with alternating polarity. The number of power buses is defined based on the number of light-emitting elements in a set, and the sets lying on the side of the edge of the substrate in a first case without a remainder in the number of sets. In a second case with a remainder in the number of sets, the remaining sets are arranged horizontally between additional power buses. In a third case with a remainder in the number of sets, the sets are arranged randomly, and the remaining unused cells under the light-emitting elements are used as contact pads for connecting power buses using current collectors to external leads of the housing of the light-emitting array of light-emitting elements. For external connection, from the active emitting side of the substrate, of the power bus with leads of the housing of the light-emitting array of light-emitting elements with current collectors, comparable on thickness with the size of the cell of light-emitting elements, a virtual cell of the light-emitting array relative, for example, the left-side and bottom edges of the substrate simultaneously or from one side, is compressed by the field of the cell of light-emitting elements by a value sufficient for an area for forming contact pads in the top and right sides of the substrate, connected to corresponding power buses for connection thereof with current collectors for external leads of the light-emitting array of light-emitting elements. If there are two more remaining cells under the light-emitting elements when forming the light-emitting array, the remaining unused cells under the light-emitting elements are used as contact pads for changing the size of virtual cells. This results in maximum density of arranging sets of light-emitting elements, avoiding crossing of series connections of light-emitting elements in a set, possible multifunctionality of a light-emitting array during separate power connection to the contact pads of the sets of light-emitting elements, and high output of non-defective articles. |
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Method of assembling three-dimensional electronic module In the method of assembling a three-dimensional electronic module, involving arranging electronic components and microboards, having contact pads on end surfaces parallel to each other, electrical connection thereof on lateral surfaces of the module inspection and sealing thereof, the starting components are used are guaranteed non-defective components; said components and the microboards are used to spatially oriented contact pats for forming a continuous line of the design of the module; an adhesive heat-conducting electrically-insulating composition is applied in a measured manner on the ends of the microboards to provide a monolithic and continuous adhesive joint; electronic components are merged on contact pads and connected; the adhesive composition is polymerised; the contact pads of the electronic components and microboards are cleaned from the film of the adhesive composition; conductors are sprayed onto the faces of the glued three-dimensional electronic module, said conductors providing the necessary connections between electronic components and microboards on their contact pads; conductors lying on the faces of the three-dimensional electronic module are grown. |
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Power semiconductor module having layered side walls In a power semiconductor module (1), which includes at least two electrically interconnected power semiconductor units (19, 20), having controlled power semiconductors, a module housing (2, 3, 13) in which the power semiconductor units (19, 20) are located and which has electrically insulating side walls (13), and at least one connection bus (9, 10, 11, 12, 21) extended through the side wall (13) and connected to at least one of the power semiconductor units (19, 20), insulating side walls (13) are constructed in form of a stack of insulating and partial elements (14, 15, 16) constructed as a single piece. The partial elements (14, 15, 16) adjoin each other through contact regions. |
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Light emitting module and thermal protection method Light-emitting module has a semiconductor light-emitting device and a thermal switch which is designed to protect the light-emitting device from overheating. At high temperature the junction of the device may reach a critical level causing catastrophic breakdown of the device. According to the invention, the thermal switch is designed to shunt the semiconductor light-emitting device. This is especially advantageous since the thermal protection offered by the switch correlates directly to the temperature of the device in operating conditions. |
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Microelectrode array unit having liquid crystal polymer, and method of making said unit Microelectrode array unit is made from a liquid crystal polymer and has a microelectrode array. The unit includes: a substrate section containing a liquid crystal polymer, an electrode section which receives and transmits biosignals, and a cover section which insulates and protects the electrode section and contains a liquid crystal polymer, wherein the electrode section is in contact with the surface of the substrate section; the cover section is connected to the surface of the substrate section on which the electrode section lies, and between the substrate section and the cover section connected to it, a space is formed, which is independent of the surrounding medium. The invention also relates to a method of making a microelectrode array unit, comprising steps of forming mounting holes in the substrate section which contains a liquid crystal polymer, and in the cover section which contains a liquid crystal polymer, forming through-holes (windows) for exposing the electrode section in the cover section, forming an electrode section on one of the surfaces of the substrate section, aligning the substrate section and the cover section using the mounting holes and connecting the substrate section and the cover section, and cutting the substrate section and the cover section connected to each other in order to impart an external shape. |
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3D electronic device is designed in the form of a cylindrical or pyramidal frustrum or a figure composed of their combinations immediately connected to each other; the microboards have external contacts at their butt-ends, the said contacts electrically connected to the microboards components with the 3D electronic modules are equipped with external contact fields positioned on their butt-ends or faces. The external switching board may be designed in the form of a flexible printed board with contact fields for connection to any surface of the 3D modules; the external contact fields may be made of flat zones (coated with a current-conductive material and connected to the external switching board, such zones positioned on the external butt-ends of each 3D module) or console-type metal or polymer metallised contacts (protruding outside the 3D electronic modules dimensions and electrically connected to the external switching board). Considered are cases when the external switching board design enables universalisation of 3D electronic modules of arbitrary spatial configuration. |
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Active thermal regulation of multilayer integral circuits In the integral circuit device containing a level with active circuits and a thermoelectric device the thermoelectric device is shaped inside through joints within the said level layer and facilitates heat flow between the integral circuit area and the thermoelectric device. In one implementation version, the themocontroller represents a thermoelectric device (TE) such as a Peltier element. The active thermocontrollers may represent p-n-transitions created within a multilayer integral circuit and may serve for transfer of heat in the horizontal or vertical direction, optionally. |
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Hybrid microwave integrated circuit Hybrid microwave integrated circuit has a dielectric substrate with a topological metallisation pattern on the front side and a screen earthing metallisation on the reverse side; chips of add-on components: active - semiconductor devices and passive - capacitors, lying on the front side of the substrate and connected to the topological metallisation pattern; on the front surface of the substrate there is a film-type polymer support on the outer side of which there are flat film-type in-circuit connecting leads which are connected to terminal pads of the active and passive add-on components and the topological metallisation pattern through through-holes made in the polymer support. The thickness of the polymer support ranges from 5 to 100 mcm and permittivity of the polymer ranges from 1.5 to 8.0. In the film-type polymer support, along the film-type conductors of the topological metallisation pattern and at a distance therefrom of not more than 1 mm, as well as under the in-circuit connecting leads, there are additional holes with density ranging from 10% to 90% of the total area of the polymer support. |
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Method for manufacture of 3d electronic module Method for manufacture of a 3D electronic module includes the operations of preliminary gluing components to the masks using sublimating glue, butt-end masks application for spraying semiconductors onto the components and microplates butt-end surfaces, application of a heat spreading agent levelling the thermal background across the whole of the modules. The technology is based on application of standard technological equipment. |
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Method to generate light-emitting matrices Method according to the invention includes placement of contact sites (CS) at the edges of a light-emitting matrix (LEM), preferably combined into groups for supply to garlands (GD), and actually GDs with the specified number of serially connected light-emitting elements (LEE) in the integral field of LEM. Paths of GD formation are compressed in the form of a labyrinth, avoiding deadline connections of LEE, at the same time the difference of quantity of LEE in GD and in the perimetre of the LEM sides or in perimetres of contacting GD from one CS to the appropriate other CS of GD is selected as even. As a result maximum density of LEE GD placement is provided, crossing of serial connections of LEE in GD is eliminated, as well as possible multifunctionality of LEM in case of separate connection of supply to CS of LEE GD, higher percentage of yield. |
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Device of a three-dimensional (3-D) multilevel integral circuit comprises first and second semiconductor crystals applied one onto another, multiple through transition holes, formed to pass substantially between active layers of the first and second semiconductor crystals and arranged as capable of providing connection between the first and second semiconductor crystals, and an active circuit formed at least partially inside at least one of many through transition holes, besides, the first and second semiconductor crystals jointly use an active circuit at least for protection against an electrostatic discharge. |
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Tunable white point light source using wavelength converting element Disclosed source of uniform high-brightness light has at least two same-type light emitting diode chips, each of which produces light having wavelengths which differ by 5 nm or more, and a wavelength converting element comprising at least two different wavelength converting materials which convert light to different colours. The intensity of the light produced by the LED chips may be varied to provide a tunable correlated colour temperature white point. The wavelength converting element may be, for example, a stack or mixture of phosphor or luminescent ceramics. Moreover, the process of manufacturing the light source is simplified since the LED chips are all manufactured using the same technology, eliminating the need to manufacture different types of chips. |
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Method of forming light-emitting arrays Disclosed method involves placing bunches with a defined number of series-connected light-emitting elements (LEE) in an integral field in closed rectangular or square LEE fields lying in series from the centre. If that number is not a multiple, then its remainder or arrear is carried from neighbouring rectangular fields with an excess number of LEE by slightly transforming the boundary of neighbouring fields. The formed bunches of LEE are placed in fields in groups or in alternating sequences or all bunches are connected in parallel. The area of LEE and the size of the substrate are determined based on the given radiation power, the number of elements in the bunch and the number of bunches with constant current density in the LEE. |
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Multi-chip module contains at least two packages of bodies with integrated circuits of operating and permanent memory, a switching card and a processor mounted on the base. Mounted on the base is a set of microplates and a cover forming together with the base a sealed body assembly. Respectively mounted on the inner surfaces of the cover and the base are the switching card and the processor connected to the body microplates by means of wire connections while on the outer surface of the base external outputs are arranged electrically connected to the cover and the microplates by means of the switching card and via through current-conducting channels. |
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Bypass module for bypassing of the first and the second inputs of cell converter of module converter contains bistable mechanical relay, power electronic switch, excitation module for switching over of relay and power electronic switch. Bistable mechanical relay is designed with possibility of electrical connection of the first input with the second one, power electronic switch is designed with possibility of electrical connection of the first input with the second one. Bypass module contains energy storage unit for power supply to mechanical relay, power electronic switch and excitation module. Excitation module contains scheme of excess voltage passive detection and when voltage is excessive energy storage unit is charged due to excess voltage. Excitation module contains additional electronic switch which is closed when voltage on energy storage unit exceeds preset value, and excitation module supplies current from energy storage unit to bistable relay and/or to power electronic switch, and excitation module has hysteresis, thus if voltage on energy storage unit is not enough exceeded, current from energy storage unit is still supplied to relay and/or to power electronic switch. |
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Multichip module is in form of a pile of chip holders, each having stacked metal-coated micro-boards, the bottom board being in form of a solid substrate, the middle and top being in form of frames on which are mounted an integrated circuit and contact pads which are electrically connected by wire connections between themselves and by microconductors of the metal coating of the micro-boards with external leads which are in form of channels formed by coaxial through-holes and lying in the periphery of the micro-boards. The substrate and the frame of the micro-boards in the chip holders are rectangular and oval shaped, respectively, and the channels lie on each side of the module with equal spacing on an arc such that the centres of the channels and contact pads of the micro-boards having the same index numbers are connected by wires of equal length. |
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Bridge interconnection by through-holes through silicon System of bridge interconnections of integrated circuits includes a first chip and a second chip provided in an adjacent configuration and electrically connected to each other by a bridge chip. The bridge chip has through-holes through silicon for connecting conducting lines of interconnections on the bridge chip with the first chip and the second chip. Active circuits, other than interconnection lines, may be provided on the bridge chip. At least one or more additional chips can be stacked on the bridge chip and connected to the bridge chip. |
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Volume module for radio electronics equipment In a volume module for radio electronics equipment having a rigid structure with leads, placed into a metal body and filled with a compound, comprising electrically and mechanically joined rectangular printed circuit boards with screening layers and installed radio electronic components, two of them are arranged horizontally, the other ones - vertically, and forming with their faces (including end ones) contours of a volume figure symmetrical relative to at least two of symmetry planes stretching via a vertical axis of the module, besides, the upper horizontal board lies not below the level of upper end faces of all vertical boards, and the lower one - not higher than the level of the lower end faces of these boards, and has external leads being leads of the module, each vertical printed circuit board comprises two separate halves of the same height, which are in planes stretching via a vertical axis of the module, and one of end side faces of each half is to the maximum brought near and parallel to this axis, and lying in a mirror manner symmetrically relative to the specified planes of symmetry or a vertical axis of the module, besides, an orthogonal projection of the upper or lower end face of any larger or smaller half at least at one of symmetry planes is within the contour of the horizontal boards, and contain contact sites along the upper and lower sides, horizontal boards have the shape of a circle with a centre lying on the axis of the module, on the contour of which there are ends of projections to this circle of smaller halves of vertical boards, besides, the specified contact sites are grouped near the circuit of accordingly upper and lower horizontal boards, where responsive contact sites are located, there are additional printed circuit boards are introduced. At the same time halves of any vertical printed circuit board may be in the same plane. Larger halves of vertical printed circuit boards may have length equal to length of smaller halves. |
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3-d integrated circuit lateral heat dissipation Three-dimensional integrated circuit device has a first chip which is laid on a second chip to form a layered structure, each of the chips having elements constructed therein, and the chips are connected to each other by a plurality of interlayer connections which form space between the first and second chips. The device also has a through-hole through the substrate, filled with heat-conducting material, which is located in the first chip. The second chip has a heat-conducting layer, wherein the heat-conducting layer provides a physical interconnection between the second chip and the through-hole through the substrate located in the first chip. |
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Powerful hybrid integral circuit of microwave range In a powerful hybrid integral circuit of microwave range comprising a dielectric substrate arranged with a reverse side on a metal heat-spreading base, in the dielectric substrate there is a hole, and on the metal heat-spreading base there is ledge, which in plan matches the hole in the dielectric substrate, on the upper plane of the heat-spreading base ledge there is a groove, through from the side of flat beam outputs of transistor crystals, on the upper plane of the heat-spreading base ledge at two sides of the crystal in one of transistors there are mount sides, equipped with a highly heat conductive plate, in a highly heat conductive plate there is a groove, where one crystal of other transistor is arranged and fixed. The highly heat conductive plate is arranged as a single one for crystals of transistors of each pair, at the same time the distance between pairs of transistors S and heat conductivity X of the plate material are defined according to the proposed condition. |
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Module of semiconductor element and method of its manufacturing In a module of a semiconductor element, at least, one semiconductor element is placed between the first insulating pad, having a high specific heat conductivity, and the second insulating pad, comprising high specific heat conductivity, and the external peripheral part between the first insulating substrate and the second insulating substrate is sealed with the help of a sealing element, at the same time the semiconductor element is mounted on the first insulating substrate and the second insulating substrate by adhesion of the first insulating substrate with the help of a sealing element with the help of binding at ambient temperature, in order to adhere the first surface of interconnections with the first through interconnections, and adhesion of the semiconductor element electrode surfaces with the first surface of interconnections and the second surface of interconnections with the help of adhesion at room temperature. |
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Lighting device has a conducting main housing at earth potential, a light-emitting device (1) in the main housing and an illumination control device configured to supply power to the light-emitting device. The light-emitting device includes a substrate (2) having an insulating layer (22) and an emitting layer (23) with specific conductivity, formed from conducting material and laminated onto the insulating layer, a plurality of light-emitting elements (3) fitted on the emitting layer, and a power line (4) configured for electrical connection of light-emitting elements and making the emitting layer electrically insulating. The lighting device also has an illumination control device (7) configured to supply power to the light-emitting device. |
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Field transistor switch contains a control circuit and a switch element consisting of MIS transistors placed in parallel the sources whereof are joined and connected to the control circuit output; one of the MIS transistors is quick-operating with average capacity, the other is of low-frequency high capacity type; their gates are accordingly connected to the first and second control circuit outputs, the circuit containing a logical device ensuring the required delay between control pulses. |
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According to the invention, in lighting device containing at least two light-emitting diodes 1 or light-emitting diode matrix consisting of several branches, or group of individual light-emitting diode matrixes, secondary electric power supply 2 and light-diffusing element 3 the light-emitting diodes or branches of light-emitting diode matrix, or individual light-emitting diode matrixes are connected antiparallel to each other and connected to output of secondary electric power supply through in-series capacitor 4. Secondary electric power supply is made in the form of adjustable alternating current source, and light-diffusing element is provided with additional phosphor coating 5. |
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Hybrid integrated circuit of shf range Hybrid integrated circuit of SHF range representing transmit-receive module of active phased antenna array which has two receiving and one transmitting channels and is made as multilayer card with added components; it is installed and fixed at metal heat-removing base and closed by dielectric cover. Dielectric substrates of multilayer card are made of ceramic, topological metal pattern is made as per thick-film technology; added components included hybrid monolithic circuit of power amplifier and monolithic semiconductor integrated circuits. Microstrip input and output SHF terminals are located at separate thin- film cards and installed at metal heat-removing base in special bays, two terminals at each side of multilayer card. Cover is made bowed and metal plating of shield grounding is applied at its inner surface by thick-film technology while low frequency outputs with contact pads are made at outer surface. |
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The light-emitting diode module FIELD: optics. SUBSTANCE: light-emitting diode module containing the printing plate thereon with one light-emitting crystal protected by translucent sealing of the first polymeric material and the semiconductor elements of surface-mount; the above light-emitting crystal has electrical contacts and wires for connecting with the foresaid semiconductor elements and the power source; the printing plate is at least partially coated with at least one protecting layer of the second polymeric material. EFFECT: in accordance with the invention provision the light-emitting diode module has improved optical characteristics and high efficiency due to the optical system of heat sinking and the design features of the printing plate of the module and the alleviated level of protection from impacts of the negative factors of the environment. 26 cl, 10 dwg |
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Multisectional voltage converter comprises at least one phase output connected to opposite poles of DC converter voltage, and subsequent connection of switching elements, besides, each switching element has at one side at least two semiconductor chips, and at the other side there is at least one capacitor that accumulates energy. The middle point of the serial connection forms a phase output, which is configured with the possibility of connection to the side of AC converter voltage and division of phase output into a branch of upper valves and a branch of lower valves. The semiconductor chips of switching elements are arranged in packets comprising at least two chips. The converter comprises a layout, for application of pressure to opposite ends of each packet for provision of electric contact between chips in the packet. Chips have plate structure and are arranged so that their larger sides are directed towards continuation of the packet. At least two semiconductor chips are related to one switching element, and adjacent chips related to one switching element are divided by a metal plate for provision of electric contact. |
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Light module assembly (1), having: a mounting substrate (10) for mounting and electrical contact of at least one light-emitting diode (20), a ceramic layer (40) lying on the path of light emitted by the light-emitting diode (20), where the ceramic layer (40) contains wavelength-converting material, the light-emitting diode (20) lies between the ceramic layer (40) and the mounting substrate (10), a light sensor (30) lying on the mounting substrate (10) and detecting luminous efficacy of the light-emitting diode (20) in order to control brightness and/or colour of light emitted by the light module (1), where the sensitive region of the light sensor (30) directly faces the ceramic layer (40), and where the ceramic layer (40) is only partially transparent in order to protect the light sensor (30) from ambient light. |
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Method involves the template containing holes for arrangement of light-emitting diodes with outputs in them without any gap. Also, the template is equipped with board along the perimetre, and at least one pin for fixation on printed-circuit board. During implementation of the method the template is installed on the printed-circuit board so that the template board can cover the printed-circuit board along the perimetre, and all the template pins can enter the appropriate holes of the printed-circuit board. After that, light-emitting diodes are arranged in the appropriate holes of the template and soldering of light-emitting diodes is performed. Then, template is removed; after that, printed-circuit board is bonded along the perimetre to the lamp housing on inner side. |
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High-voltage semiconducting switching device High-voltage semiconducting switching device consists of selected by leakage current series connected unpackaged semiconducting elements that are centred and isolated by side surface with the help of fluoroplastic rings, housing, clamping system and current-carrying electrodes. The housing is made of isolating material with high mechanical and electrical strength. At both housing ends there are rigidly fixed metal flanges that are included in clamping system with threaded holes. At bolting of switching device cover to housing flanges with the help of clamping system elements located inside the cover there created is necessary compressive force of semiconducting devices and its transmission through the housing to semiconducting devices. Note that at the same time there performed is pressurisation of inner volume of switching unit housing by O-rings located between flanges and current-carrying electrodes. |
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Integrated circuit device and method of making said device Integrated circuit device has a first chip with a plurality of via-holes running through the substrate, each containing electrocoductive material, where the first chip has a surface area; and a plurality of second chips, each having a plurality of contact points connected to the electroconductive material of the via-holes of the first chip. The plurality of second chips lies on the first chip such that they jointly form a surface area which is approximately equal to or greater than the corresponding surface area of the first chip. The invention discloses a method of making the integrated circuit device with a plurality of second chips placed on the first chip. |
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System of power supply, including interchangeable cells System of power cells includes structure providing for multiple seats of power cells location. System also includes at least one regenerative power cell and at least one non-regenerative power cell. Seats of cells arrangement and power cells are maintained in size and are positioned so that each seat of cell arrangement may, on the basis of interchangeability, hold either regenerative power cell or non-regenerative power cell. |
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Light-emitting diode radiation source for transport control systems In a light-emitting diode radiation source having at least one or more semiconductor light emitters, monochromatic radiation emitters in the UV or optical region, a light emitter holder with connection leads, a radiator and a casing lens, in accordance with the invention, the semiconductor light emitters and monochromatic radiation emitters in the UV or optical region are coated with a luminophor. The wavelength of the radiation emitters coated with luminophor lies in the 450-455 nm range, and its chromaticity coordinates lie in the range X=(0.310, 0.315, 0.360, 0.360)±0.001, Y=(0.330, 0.310, 0.370, 0.350)±0.01. |
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Electronic advertising panel for playing grounds Panel is formed of modules. Each module consists of functional unit packed in metal casing. At the ends of functional unit there are mutually engaging connectors for connecting serial modules. Functional unit is formed by multilayer package and contains metal plate, at least one polycarbonate sheet and at least one printed circuit board. The circuit board is equipped with light-emitting diodes. |
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Imaging device, communication device and cartridge Imaging device and communication device include: a data transmission unit, several signal transmission lines, a control unit, a switching unit, a data receiving unit and several signal reception lines, capable of transmitting a data signal from memory of several cartridges to the said data receiving unit. The data signal is transmitted to the said data receiving unit through a signal reception line connected to cartridge memory which can be connected to the said data transmission unit in response to connection of the said data transmission unit with one the said several signal transmission lines through the said switching units. The cartridge used in the imaging device contains: a first contact and a second contact, which can be connected to the communication device through two communication lines, a memory chip which can be connected to the first contact and the second contact. |
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Hybrid integrated microwave circuit Hybrid integrated microwave circuit includes dielectric substrate on the front side of which there located is topological metallisation pattern, and on rear side - screen earthing metallisation, at least one metallised mounting platform connected to screen earthing metallisation, at least one transistor, at least two capacitors on both sides of transistor. At that, at least one of the transistor outputs is electrically connected to upper coatings of capacitors, at least two other outputs are electrically connected to topological metallisation pattern, lower coatings of capacitors are electrically connected to metallised mounting platform and through it to screen earthing metallisation. Transistor with outputs, two capacitors and electric connections of one of transistor outputs to upper coatings of capacitors are made in the form of at least one crystal of monolithic integrated circuit, which is located on one metallised mounting platform. At that, both capacitors are film-type, upper coatings of capacitors, outputs of transistor and electric connections of one of transistor outputs with upper coatings of capacitors are provided in one metallisation layer of crystal of monolithic integrated circuit. At that, in crystal of monolithic integrated circuit immediately under lower coatings of capacitors there made are through metallised holes for electric connection of lower coatings of capacitors with metallised mounting platform. |
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Power hybrid microwave integrated circuit Power hybrid microwave integrated circuit has transistors which are made in form of chips with flat beam leads. On the metallic heat-sinking base there is a projection whose layout coincides with the opening in the insulating substrate and enters the said opening. The height of the projection enables its top plane to lie aflush with the face of the insulating substrate. On the top plane of the projection there is a cavity running through from the side of the flat beam leads of the chip of one of the transistors connected to the topological metallisation pattern. On the top lane of the projection of the metallic heat-sinking base, at least on one side the chip of one of the transistors there is at least one mounting pad which has a metal plate which is has good electro- and heat conduction and is joined to it. In this metal plate there is at least one groove into which the chip of the other transistor is put. The groove runs through from the side of the flat beam leads of the chip which are connected to the topological metallisation pattern and is proportional to the pattern. Other flat beam leads of transistor chips are connected to the projection on the metallic heat-sinking base. The width of the transistor chip is equal to the width of the projection of the metallic heat-sinking base and the width of the good heat conducting plate. The thickness of the bottom of the groove and distance from the edge of the groove to the closest edge of the plate are selected such that there is minimal difference in maximum temperature of the chips. |
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Method for production of three-dimensional hybrid integral module Invention is related to microelectronics and may be used in production of three-dimensional hybrid integral module, comprising flexible board with mounted crystals of naked chips. In method for manufacture of three-dimensional hybrid integral module flexible board is made, besides at design stage all areas for bends are designed as branch fragments. When making assembly operations, branch fragments are coated with protective shock-absorbing adhesive coating along the whole length of bend semi-circle. Remaining parts of board are coated with thermal compensating coat, afterwards flexible board is folded in stack so that assembly terminals are located symmetrically relative to stack. |
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Method of cylindrical card with light-emitting diodes production and light-emitting lamp Invention relates to LED-based semi-conducting instruments production and may be used for manufacturing LED lamps in obstruction lights and signal lamps for ground lights, towers, high and long buildings and for light lamps and illumination. Method of cylindrical card with LED production includes the following steps: power unit and light-emitting diodes are placed on rectangular card work pieces. Besides, the power unit elements are placed on the end part of the card work piece. After that, it is bent at an angle to the card plane along the line parallel to the card work piece height. The next step includes bending of the card work piece around the bent end part until the hollow cylinder is formed, i.e. hollow cylindrical card with light emitting diodes being situated on its external surface and power unit elements being situated inside. |
Another patent 2513575.