By ion-implantation (C30B31/22)

Identification mark for marking valuables and method of making said mark

Invention relates to apparatus and methods of marking valuables, mainly precious stones, particularly cut diamonds, and can be used for subsequent identification of data of the valuables. Mark 1 is made in form of an image, which is optically visualised in diffraction-reflection light, made on the polished surface 3 of the valuable object 2. The structure of the image is formed by a modified area of the surface layer of the object 2 with optical properties in the said area, which is functionally the image of mark 1, altered from the initial properties. The modified area is made in form of microlines 8, spatially formed according to type of the reflection grating, which is functionally an apparatus for increasing contrast of visual perception of the image of marker 1 in at least one of the colour hues of the spectrum of incident radiation. The structure of microlines of the modified area includes at least one impurity additive, which is selected from a group which includes noble metals or boron, ion-implanted into atomic lattices of the initial material of the object without breaking interatomic bonds of these lattices and, therefore, without changing quality of the polished surface of the object, but with change of the complex refractive index of this material. According to the method of making mark 1, before modification, a technological layer (TL) of material, which is removed after modification, is deposited on surface 3. A structure is formed in the technological layer according to type of the line grating. The corresponding area of the surface layer is modified by exposing this area to an ion beam through a mask with an image of mark 1 and the spatial structure formed in the technological layer, that way creating process conditions implantation of modifier ions into the modified area of the surface layer of the material of object 2 without breaking bonds in the atomic lattices of this material and, therefore, without changing initial quality of polishing the surface layer, but with change of its initial optical properties. The modifier used is impurity additives, selected from a group which includes noble metals or boron, ions of which alter the complex refractive index of the modified layer.

Method of multi-element ion implantation (versions)

Two versions are proposed for realization of this method for forming on surface of object to be subjected to radiation multi-element beam at difference of ratio of ion mass to charge not exceeding 10% for each ion. According to first version, multi-element plasma of high-charge ions is formed in chamber of one source which is connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions is extracted from plasma with the aid of electric field formed by constant accelerating voltage and this beam is directed to magnetic separator which separates ion components of phase-forming atoms at difference in ratio of ion mass to its charge not exceeding 10% scanning over surface of object to be subjected to ration by this beam. According to second version, multi-element plasma of high-charge ions is formed in chamber of source connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions at respective energies is extracted with the aid of electric field formed by modulator of accelerating voltage amplitude; this field changes in amplitude periodically and successively. Ions accelerated periodically and successively for selected energies are directed to object to be subjected to radiation though magnetic separator.

Method for alloying metals in films

Method comprises steps of spraying and simultaneously displacing in space metal and alloying element to nano-dispersed state in low-pressure plasma and their co-deposition in the form of sub-layers at alternating repeating crossing of plasma fluxes; depositing each layer in the form of "island" type coating with particle size of metal and(or) alloying element less than critical size when particle is in liquid state at co-deposition. Invention provides significantly lowered temperature (about 100°C) of alloying - formation of solid solution.

Boule of the iii-v groups element nitride used for production of substrates and the method of its manufacture and application

The invention is pertaining to production of microelectronic devices on the basis of substrates manufactured out of III-V groups chemical element nitride boules and may be used in semiconductor engineering. Substance of the invention: the boule of III-V groups chemical element nitride may be manufactured by growing of the material of III-V groups the chemical element nitride on the corresponding crystal seed out of the same material of nitride of the chemical element of III-V of group by epitaxy from the vapor phase at the speed of the growth exceeding 20 micrometers per hour. The boule has the quality suitable for manufacture of microelectronic devices, its diameter makes more than 1 centimeter, the length exceeds 1 millimeter, defects density on the boule upper surface is less than 107 defects·cm-2.