Method to make hybrid integral circuit of microwave band

FIELD: electricity.

SUBSTANCE: method for manufacturing of powerful hybrid integral circuit of microwave band includes manufacturing of a multilayer dielectric substrate, application of metal-sprayed coatings of the layout to each dielectric layer and earthing metal coating at the reverse side of the lower layer of the multilayer dielectric substrate, adjustment of via openings in dielectric layers, sintering and annealing, placement and fixture of the multilayer dielectric substrate by the earthing metal coating to electricity- and heat-conducting base, placement and fixture of an active heat-generating component in each via opening with placement of their faces in the same plane, electrical connection of bond areas of the active heat-generating component to the layout metal-sprayed coatings of the multilayer dielectric substrate. At that one part of some dielectric layers is made with via opening having cross-section proportioned to the active heat-generating component exceeding less than 0.5 mm, the other part is made with less cross-section at the ratio of their cross-sections ratio of 1.4-10 respectively, via openings in the latter are filled with the material of metal-sprayed coating, and while forming sequence of the multilayer dielectric substrate some dielectric layers with bigger cross-section are placed at its face while the other layers with less cross-section are placed at the reverse side.

EFFECT: improvement of manufacturability and electric performance.

3 cl, 1 dwg, 1 tbl

The invention relates to electronic devices and can be used to create powerful hybrid integrated circuits microwave-range multi-purpose.

A known method of manufacturing a hybrid integrated circuit VHF, including the fabrication of the dielectric substrate with the topological metallization pattern coating and cut-outs, which use the binder clip of semiconductor crystals, providing the location of the crystal surface with the contact surface sites and boards in the same plane, the connection is electrically connected to contact pads of semiconductor crystals with the topological metallization pattern coverage.

In order to improve electrical characteristics and increase the density of the mounting recesses in the dielectric Board is made in the form of recesses with depth in excess of 10-30 μm, the thickness of the semiconductor crystals, mounted on the bottom of the grooves and the gap between the walls of each recess and the crystal is made equal to 20-100 µm [1].

The disadvantage of this method is the low technological process due to the high complexity of manufacture grooves of regular geometric shape.

A known method of manufacturing a hybrid integrated circuit VHF, including manufacturing metallisierung the two sides of the dielectric substrate with the topological metallization pattern coating on the front side, at least one mounting (contact) area located on the electrical and heat conducting elements placed in the holes of the dielectric substrate, the positioning and fixing of the dielectric substrate opposite side to the heat sink base, the location of planar electronic devices on the Assembly platform, attaching them to the binder and the electrical connection pads planar electronic devices with the topological metallization pattern coating on the front side of the dielectric substrate.

In order to improve heat dissipation, reduce weight and size characteristics and parasitic electrical parameters of the installation site place in the metallized recess, the distance from the mounting pad to the front side of the substrate charge equal to the total thickness of the planar electronic device and a binder.

In addition, to further increase the yield of end metallization of the walls of the recess and the gap between the side faces of the electronic device and the walls of the recess is covered by a dielectric composition [2].

The disadvantage is the low technological process, due to the high complexity of manufacturing as crevices and holes in the dielectric padlock the correct geometric shape.

The known method of manufacturing of the power hybrid integrated circuit VHF range, including the manufacture of multilayer dielectric substrate with a given sequence of dielectric layers, providing for the manufacture of individual dielectric layers, at least one through hole, applying a given metallization coating topological pattern on each of the separate dielectric layers and screen grounding metallization on the back side of the bottom layer of the multilayer dielectric substrate, the formation sequence of the multilayer dielectric substrate through the location of the individual dielectric layers with simultaneous alignment of their holes with the provision of forming at least one through hole in a multilayer dielectric substrate, followed by sintering and annealing. The location and fixation of the multilayer dielectric substrate of the display ground metallization for electrical and heat-conductive base. Location and fastening of each through-hole multilayer dielectric substrate, the active fuel component to ensuring the location of their front sides in the same plane. The connection pads electrically active fuel to mponent with the topological metallization pattern coating of the multilayer dielectric substrate [3] - the prototype.

The advantage of the prototype over analogues is to use a multilayer dielectric substrate from a material made by a low temperature together calcined ceramics (LTCC).

It is allowed to use for applying metallization coating layout and display of the grounding metallization low-temperature metallization paste, providing the connecting conductors of higher conductivity and consequently lower losses passing signal SHF.

The technical result is to increase the processability of the method of manufacturing of the power hybrid integrated circuit VHF range and increasing its electrical characteristics.

The specified technical result is achieved by the claimed method of manufacturing a powerful hybrid integrated circuit VHF range, including

the manufacture of multilayer dielectric substrate with a given sequence of dielectric layers, providing for the manufacture of individual dielectric layers, at least one through hole, applying a given metallization coating topological pattern on each of the separate dielectric layers and screen grounding metallization on the back side of the bottom layer of the multilayer dielectr the political background

the formation sequence of the multilayer dielectric substrate through the location of the individual dielectric layers with simultaneous alignment of their holes with the provision of forming at least one through hole in a multilayer dielectric substrate,

subsequent sintering and annealing,

the location and fixation of the multilayer dielectric substrate of the display ground metallization for electrical and heat-conductive base,

location and fastening of each through-hole multilayer dielectric substrate, the active fuel component to ensuring the location of their front sides in the same plane,

the connection pads electrically active fuel component with the topological metallization pattern coating of the multilayer dielectric substrate.

In which

one part of a separate dielectric layer sequence of the multilayer dielectric substrate is made with a through hole with a cross-section commensurate with active fuel component exceeding not exceeding 0,5 mm

another part with a smaller cross-section when the ratio of their cross-sectional area of from 1.4 to 10, respectively, with apertures last fill material metal is salonaho coating simultaneously in the process of its application,

when forming sequence of the multilayer dielectric substrate with its front side have a separate dielectric layers with a large section on the reverse side with a smaller cross-section,

the depth n of the widest part of the through-hole multilayer dielectric substrate is carried out according to the expression:

H=h×n/k,

where h is the thickness of the dielectric layer with a large cross-section, mm

n - number of individual dielectric layers with a larger cross section,

k is a coefficient equal to 0.8-1.2.

In the manufacture of a separate dielectric layer sequence of the multilayer dielectric substrate, at least one through hole using low-temperature together calcined ceramics (LTCC).

Through holes in each dielectric layer is performed, for example, by punching.

Disclosure of the invention.

The set of essential features of the claimed method of manufacturing of the power hybrid integrated circuit VHF range, namely:

when one part of a separate dielectric layer sequence of the multilayer dielectric substrate is made with a through hole with a cross-section commensurate with active fuel component exceeding not exceeding 0,5 mm

the other part - with a smaller cross-section when the ratio of their cross-sectional area of from 1.4 to 10, respectively,

and when the through holes of the latter (with a smaller cross-section) fill material metallization coating simultaneously in the process of its application,

as well as when forming sequence of the multilayer dielectric substrate with its front side have a separate dielectric layers with a large section on the reverse side with a smaller cross-section,

the depth n of the widest part of the through-hole multilayer dielectric substrate is carried out according to the specified expression.

This will ensure the formation of through holes in the multilayer dielectric substrate for positioning and fastening of the active fuel component in the form of a step, and thus will improve the manufacturability of the location of the active fuel component and accordingly improving the manufacturability of the location of the front sides of the multilayer dielectric substrate and the active fuel component in the same plane, thereby reducing the length of the connecting wires and thereby reducing the parasitic inductances and, as a consequence of this:

first, improving the processability of the method of manufacturing of the power hybrid integrated circuit VHF range in C is scrap,

secondly, improving the electrical characteristics of a powerful hybrid integrated circuit VHF range.

Run through holes in each dielectric layer by punching is the most simple and feasible method used today when working in conjunction with low-temperature firing ceramic (LTCC).

The invention is illustrated in the drawing.

In the drawing is given of the structural scheme of the technological operations of manufacture claimed a powerful hybrid integrated circuit VHF range.

Example 1 of embodiment declared powerful hybrid integrated circuit VHF range

Made of a multilayer dielectric substrate with a given sequence of dielectric layers, which are made of separate dielectric layers of low-temperature material together calcined ceramics (LTCC) brand "Du Pont 951", for example, with one through hole, the latter is made by punching.

While one part of the individual dielectric layers are made with a through hole with a cross section equal to (3,2×3,5 mm), which is commensurate with active fuel component pumas M-2 APNT 43810.24 THE size (3,0×3,3) mm

another part with a smaller cross-section, equal 4,48 mm, which corresponds to the ratio of their cross-sectional area of the 5.7 (item 1 and 6,).

UNOSAT specified metallization coating topological pattern on each of the separate dielectric layers and screen grounding metallization on the back side of the bottom layer of the multilayer dielectric substrate metallization paste brand 6142D method for thick-film technology, while simultaneously filling the specified metallization paste through holes with a smaller cross-section (item 1).

Generate the given sequence of the multilayer dielectric substrate through the location of the individual dielectric layers with simultaneous alignment of their holes, ensuring the formation of through holes in the multilayer dielectric substrate with its front side have a separate dielectric layers with a larger cross section at the depth H equal to 0.25 mm, which is calculated according to expression when h is the thickness of the dielectric layer with a larger cross section equal to 0.125 mm, n is the number of individual dielectric layers with a larger cross section equal to 2, k - factor, equal to 1.0 (POS.1 g).

Then carry out the sintering and annealing at a temperature of 880±20°C for 10 min (POS.1).

Come and fix multilayer dielectric substrate of the display ground metallization for electrical and heat-conductive base made of pseudoplane mark MD 50 (pos.2).

Fitted and fixed in the through-hole multilayer dielectric substrate of the active fuel component pumas M-2 APNT 43810.24 THE provision of location of their face with the Oron in one plane (3).

Electrically connect the contact pads of the specified active fuel component with the topological metallization pattern coating of the multilayer dielectric substrate (pos.4).

Examples 2-5

Analogously to example 1 produced samples of high-power hybrid integrated circuit VHF range, but when other process parameters, as specified in the formula of the invention (examples 2-3)and abroad (examples 4-5).

The data of example 6 corresponds to the method of manufacturing of the power hybrid integrated circuit VHF range of the prototype.

On the prepared samples were measured output power and gain.

The data presented in the table.

As can be seen from the table, samples a powerful hybrid integrated circuit VHF range manufactured according to the claimed method, have a power output of about 1 W and the gain - 12 dB (examples 1-3).

In contrast to the samples produced with technological parameters, beyond (examples 4-5), and prototype (example 6), which have a power output of about 0.7 W and a gain of about 10 dB.

Thus, the claimed method of manufacturing of the power hybrid integrated circuit VHF range will provide compared to prototype

first, improving the manufacturability of the way the ing,

secondly, improving the electrical characteristics of a powerful hybrid integrated circuit VHF range, increase power output by about 30 percent gain by 20 percent.

Sources of information

1. RF patent №2227345, IPC H01L 27/13, H05 1/16, priority, 26.02.2002, publ. 20.04.04.

2. RF patent №2390877, IPC H01L 25/16, H05K 1/02, priority of invention 08.04.2009, publ. 27.05.10.

3. Scientific-technical collection, Electronic equipment, Series 1, the microwave technique, issue 3(502) 2009, s prototype.

1. A method of manufacturing a powerful hybrid integrated circuit VHF range, including the manufacture of multilayer dielectric substrate with a given sequence of dielectric layers, providing for the manufacture of individual dielectric layers, at least one through hole, applying a given metallization coating topological pattern on each of the separate dielectric layers and screen grounding metallization on the back side of the bottom layer of the multilayer dielectric substrate, the formation sequence of the multilayer dielectric substrate through the location of the individual dielectric layers with simultaneous alignment of their holes, ensuring the formation of at least one squoze the holes in the multilayer dielectric substrate, subsequent sintering and annealing, the location and fixation of the multilayer dielectric substrate of the display ground metallization for electrical and heat-conductive base, the positioning and fixing each of the through-hole multilayer dielectric substrate of the active fuel component to ensuring the location of their front sides in the same plane, the connection pads electrically active fuel component with the topological metallization pattern coating of the multilayer dielectric substrate, characterized in that one part of a separate dielectric layer sequence of the multilayer dielectric substrate is made with a through hole with a cross-section commensurate with active fuel component exceeding not more than 0.5 mm, the other part with a smaller cross-section with a ratio of their cross-sectional area of from 1.4 to 10, respectively, with apertures last fill material metallization coating simultaneously in the process of its application, the formation sequence of the multilayer dielectric substrate with its front side have a separate dielectric layers with a large section on the reverse side with a smaller cross-section, the depth H of the wide part of the through hole INR what sloinoi dielectric substrate is carried out according to the expression:
H=h×n/k
where h is the thickness of the dielectric layer with a large cross-section, mm
n - number of individual dielectric layers with a larger cross section,
k is a coefficient equal to 0.8-1.2.

2. A method of manufacturing a powerful hybrid integrated circuit of the microwave range according to claim 1, characterized in that during the manufacture of individual dielectric layers sequence multilayer dielectric ε use, for example, low-temperature together calcined ceramics.

3. A method of manufacturing a powerful hybrid integrated circuit of the microwave range according to claim 1, characterized in that the through holes in each dielectric layer is performed, for example, by punching.