Integrated injection laser with radiation frequency modulation by controlled relocation of amplitude maximum of wave functions of charge carriers. RU patent 2520947.
 Multibarrier heterostructure for generation of powerful electromagnet radiation of sub- and terahertz ranges / 2499339In a multibarrier heterostructure for generation of powerful electromagnet radiation of subterahertz and terahertz frequency ranges, representing a multilayer heterostructure from alternating layers of narrow-zone and wide-zone semiconductors, where the layer of the wide-zone semiconductor is an energy barrier ΔEC for electrons from the narrow-zone layer, according to the invention, thicknesses d of heterolayers are selected from the condition D τ > d > 30, nm , where D - coefficient of electron diffusion, and τ - time of relaxation of excessive thermal energy of electrons into a lattice; wide-zone (barrier) layers are not alloyed, and concentration of donors Nd in narrow-zone layers meets the condition of 1017 cm-3≤Nd≤1018 cm-3; height of energy barrier ΔEC>6kT; quantity of alternating pairs of narrow-zone and wide-zone layers is n>4. Besides, the material of the wide-zone barrier layer in the first pair differs from all other, subsequent ones, and providing for lower height of the first energy barrier compared to the subsequent ones. |
 Semiconductor frequency-tuned infrared source / 2431225Invention relates to semiconductor frequency-tuned infrared sources based on a disc resonator laser working on whispering gallery modes (WGM). Such infrared sources can be used in spectrometry, medicine, optical communication and information transmission systems, in optical ultrahigh speed computer and switching systems and when designing medical equipment. The semiconductor frequency-tuned infrared source has a semiconductor frequency-tuned disc laser for the wavelength range 1.8-4.5 mcm and two voltage sources. The laser has GaSb substrate, a quantum-dimensional heterostructure grown on the substrate, a resonator and top and bottom ohmic contacts. The heterostructure consists of an active region, boundary layers of GaAISbAs and a GaSb contact layer. The active region contains waveguide layers of GaAIAsSb, at least one quantum well of Ga1-XInXASYSb1-Y with the dominant mode of composition and wavelength ranging from 2 nm to 30 nm selected according to the required wavelength range of 1.8-4.5 mcm. The resonator is in form of a disc or a sector of a disc. The bottom ohmic contact is deposited on the substrate and the top ohmic contact is deposited on the front surface of the resonator and consists of two parts electrically insulated from each other. The voltage sources are such that constant or phase-synchronised pulsed voltage of opposite polarity to that of the bottom contact can be applied across the two parts of the said top ohmic contact. |
 Active zone of generator on semiconductor structure / 2415502Active zone is superlattice made in form of a heterostructure from AIIIBV type compounds and provides periodic variation of energy of the bottom of the conduction band of the structure. The superlattice has a lattice constant d, consisting of one potential quantum well and a narrow potential barrier whose width is 3-20 times less than the width of the potential quantum well. The working transition in the active zone when voltage is applied is the transition between the Wannier-Stark ground level in one potential quantum well and the first Wannier-Stark excited level in the well, lying at a distance of two or more superlattice constants d. |
 Light-emitting structure and method for manufacturing light- emitting structure / 2257640Proposed method includes sequential growing of following layers on GsAs substrate by GaAs molecular-beam epitaxy: GaAs buffer layer; lower emitter layer basing on AlGaAs compound; lower part of GaAs waveguide layer; active region formed at substrate temperature of 350 - 380 °C by sequential deposition of GaAsN/InGsAsN superlattice of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, incorporating at least one GaAsN layer and at least one InGsAsN layer, central InAs layer, 0.3 - 0.5 nm thick, GaAsN/InGaAsN superlattice incorporating at least one GaAsN later and at least one InGaAsN later of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, ratio of Group V element currents to group III ones being 1.5 - 5.0, upper part of GsAs waveguide layer, and upper emitter layer based on AlGaAs compound; GaAs contact layer. Proposed light-emitting structure is characterized in affording radiation wavelength of 1.30 to 1.55 μm and has GaAs substrate whereon following layers are grown: GaAs buffer layer; lower emitter layer formed of alternating AlAs and GaAs layers; GaAs waveguide layer with active region in the form of two GaAsN/InGaAsN superlattices abutting against central InAs layer; upper emitter layer based on AlGaAs compound; and GaAs contact layer; each of mentioned superlattices has at least one GaAsN layer and at least one InGaAsN layer. |
 Two-section laser / 2383093Two-section laser based on AlGaAs/GaAs compounds includes an n-type GaAs substrate bordered by two mirrors with absorption and amplifying sections on the substrate. The sections are insulated from each other by a gap made from semiconductor material implanted with heavy ions. Each section has on the said substrate series-arranged n-type GaAs buffer layer, an AlGaAs transitional layer with gradient composition, a bottom n-type AlGaAs emitter layer, the GaAs bottom part of a waveguide layer, 5-15 layers of vertically correlated quantum dots separated by GaAs layers, the top part of the waveguide layer, a p-type AlGaAs top emitter layer, a top transitional layer with gradient composition and a p-type GaAs contact layer. Each layer of vertically correlated quantum dots has an array of quantum dots self-organised from an InAs layer and imperforated by an InGaAs layer. |
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Two-section laser / 2383093 Two-section laser based on AlGaAs/GaAs compounds includes an n-type GaAs substrate bordered by two mirrors with absorption and amplifying sections on the substrate. The sections are insulated from each other by a gap made from semiconductor material implanted with heavy ions. Each section has on the said substrate series-arranged n-type GaAs buffer layer, an AlGaAs transitional layer with gradient composition, a bottom n-type AlGaAs emitter layer, the GaAs bottom part of a waveguide layer, 5-15 layers of vertically correlated quantum dots separated by GaAs layers, the top part of the waveguide layer, a p-type AlGaAs top emitter layer, a top transitional layer with gradient composition and a p-type GaAs contact layer. Each layer of vertically correlated quantum dots has an array of quantum dots self-organised from an InAs layer and imperforated by an InGaAs layer. |
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Integrated injection laser with radiation frequency modulation by controlled relocation of amplitude maximum of wave functions of charge carriers / 2520947 Invention relates to quantum electronic engineering. The integrated injection laser includes an upper control region of second conductivity type which adjoins an upper waveguide layer, a lower control region of second conductivity type which adjoins a lower waveguide layer, a lower control region of first conductivity type which adjoins a substrate at the top and the lower control region of second conductivity type at the bottom to form a p-n junction, an ohmic contact to the lower control region of first conductivity type, a control metal contact adjoining the upper control region of second conductivity type at the top to form a Schottky junction. The lower boundary of the conduction band of the lower waveguide layer lies below the lower boundary of the conduction band of the quantum-size active region and higher than the lower boundary of the conduction band of the upper waveguide layer. The upper boundary of the valence band of the lower waveguide layer lies below the upper boundary of the valence band of the active region and higher than the upper boundary of the valence band of the upper waveguide layer. |
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Light-emitting structure and method for manufacturing light- emitting structure / 2257640 Proposed method includes sequential growing of following layers on GsAs substrate by GaAs molecular-beam epitaxy: GaAs buffer layer; lower emitter layer basing on AlGaAs compound; lower part of GaAs waveguide layer; active region formed at substrate temperature of 350 - 380 °C by sequential deposition of GaAsN/InGsAsN superlattice of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, incorporating at least one GaAsN layer and at least one InGsAsN layer, central InAs layer, 0.3 - 0.5 nm thick, GaAsN/InGaAsN superlattice incorporating at least one GaAsN later and at least one InGaAsN later of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, ratio of Group V element currents to group III ones being 1.5 - 5.0, upper part of GsAs waveguide layer, and upper emitter layer based on AlGaAs compound; GaAs contact layer. Proposed light-emitting structure is characterized in affording radiation wavelength of 1.30 to 1.55 μm and has GaAs substrate whereon following layers are grown: GaAs buffer layer; lower emitter layer formed of alternating AlAs and GaAs layers; GaAs waveguide layer with active region in the form of two GaAsN/InGaAsN superlattices abutting against central InAs layer; upper emitter layer based on AlGaAs compound; and GaAs contact layer; each of mentioned superlattices has at least one GaAsN layer and at least one InGaAsN layer. |
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Active zone of generator on semiconductor structure / 2415502 Active zone is superlattice made in form of a heterostructure from AIIIBV type compounds and provides periodic variation of energy of the bottom of the conduction band of the structure. The superlattice has a lattice constant d, consisting of one potential quantum well and a narrow potential barrier whose width is 3-20 times less than the width of the potential quantum well. The working transition in the active zone when voltage is applied is the transition between the Wannier-Stark ground level in one potential quantum well and the first Wannier-Stark excited level in the well, lying at a distance of two or more superlattice constants d. |
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Semiconductor frequency-tuned infrared source / 2431225 Invention relates to semiconductor frequency-tuned infrared sources based on a disc resonator laser working on whispering gallery modes (WGM). Such infrared sources can be used in spectrometry, medicine, optical communication and information transmission systems, in optical ultrahigh speed computer and switching systems and when designing medical equipment. The semiconductor frequency-tuned infrared source has a semiconductor frequency-tuned disc laser for the wavelength range 1.8-4.5 mcm and two voltage sources. The laser has GaSb substrate, a quantum-dimensional heterostructure grown on the substrate, a resonator and top and bottom ohmic contacts. The heterostructure consists of an active region, boundary layers of GaAISbAs and a GaSb contact layer. The active region contains waveguide layers of GaAIAsSb, at least one quantum well of Ga1-XInXASYSb1-Y with the dominant mode of composition and wavelength ranging from 2 nm to 30 nm selected according to the required wavelength range of 1.8-4.5 mcm. The resonator is in form of a disc or a sector of a disc. The bottom ohmic contact is deposited on the substrate and the top ohmic contact is deposited on the front surface of the resonator and consists of two parts electrically insulated from each other. The voltage sources are such that constant or phase-synchronised pulsed voltage of opposite polarity to that of the bottom contact can be applied across the two parts of the said top ohmic contact. |
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Multibarrier heterostructure for generation of powerful electromagnet radiation of sub- and terahertz ranges / 2499339 In a multibarrier heterostructure for generation of powerful electromagnet radiation of subterahertz and terahertz frequency ranges, representing a multilayer heterostructure from alternating layers of narrow-zone and wide-zone semiconductors, where the layer of the wide-zone semiconductor is an energy barrier ΔEC for electrons from the narrow-zone layer, according to the invention, thicknesses d of heterolayers are selected from the condition D τ > d > 30, nm , where D - coefficient of electron diffusion, and τ - time of relaxation of excessive thermal energy of electrons into a lattice; wide-zone (barrier) layers are not alloyed, and concentration of donors Nd in narrow-zone layers meets the condition of 1017 cm-3≤Nd≤1018 cm-3; height of energy barrier ΔEC>6kT; quantity of alternating pairs of narrow-zone and wide-zone layers is n>4. Besides, the material of the wide-zone barrier layer in the first pair differs from all other, subsequent ones, and providing for lower height of the first energy barrier compared to the subsequent ones. |
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Integrated injection laser with radiation frequency modulation by controlled relocation of amplitude maximum of wave functions of charge carriers / 2520947 Invention relates to quantum electronic engineering. The integrated injection laser includes an upper control region of second conductivity type which adjoins an upper waveguide layer, a lower control region of second conductivity type which adjoins a lower waveguide layer, a lower control region of first conductivity type which adjoins a substrate at the top and the lower control region of second conductivity type at the bottom to form a p-n junction, an ohmic contact to the lower control region of first conductivity type, a control metal contact adjoining the upper control region of second conductivity type at the top to form a Schottky junction. The lower boundary of the conduction band of the lower waveguide layer lies below the lower boundary of the conduction band of the quantum-size active region and higher than the lower boundary of the conduction band of the upper waveguide layer. The upper boundary of the valence band of the lower waveguide layer lies below the upper boundary of the valence band of the active region and higher than the upper boundary of the valence band of the upper waveguide layer. |
FIELD: physics, optics.
SUBSTANCE: invention relates to quantum electronic engineering. The integrated injection laser includes an upper control region of second conductivity type which adjoins an upper waveguide layer, a lower control region of second conductivity type which adjoins a lower waveguide layer, a lower control region of first conductivity type which adjoins a substrate at the top and the lower control region of second conductivity type at the bottom to form a p-n junction, an ohmic contact to the lower control region of first conductivity type, a control metal contact adjoining the upper control region of second conductivity type at the top to form a Schottky junction. The lower boundary of the conduction band of the lower waveguide layer lies below the lower boundary of the conduction band of the quantum-size active region and higher than the lower boundary of the conduction band of the upper waveguide layer. The upper boundary of the valence band of the lower waveguide layer lies below the upper boundary of the valence band of the active region and higher than the upper boundary of the valence band of the upper waveguide layer.
EFFECT: faster operation of the device.
3 dwg
The present invention relates to the field of quantum electronics and integral opto-electronics, and more specifically to the integral injection lasers.
Known injection semiconductor laser (see "Injection semiconductor laser", D.M. Demidov, HE Karpov, V.F. Mymrin,
A.L. Ter-Martirosyan, EN 2309501 C1, 2007), containing politology substrate, quantum-size active area of intrinsic conductivity, the top and bottom of waveguide layers adjacent respectively above and below to quantum-well active region intrinsic conductivity, the area of the emitter of the first type of conductivity, adjacent to the bottom of the waveguide layer, the area of the emitter of the second type conductivity, ohmic contact to the field emitter first type of conductivity, ohmic contact to the field emitter second type of conductivity, top and bottom additional layers own conductivity attached respectively to the top and bottom of waveguide layers, and to both sides of quantum-well active region intrinsic conductivity, and ohmic contact to the field emitter second type of conductivity is located on the lower surface of the substrate of the second type conductivity adjacent area of the emitter of the second type conductivity.
Signs of similar coinciding with the essential features are politology substrate, quantum-size active area of intrinsic conductivity, the top and bottom of waveguide layers adjacent respectively above and below to quantum-well active region intrinsic conductivity, the area of the emitter of the first type of conductivity, adjacent to the bottom of the waveguide layer, the area of the emitter of the second type conductivity, ohmic contact to the field emitter first type of conductivity, ohmic contact to the field emitter second type of conductivity.
The reason for impeding the achievement of the technical result is reduced performance due to the inertia of the processes of accumulation and resorption of charge in the active region of the laser.
Known injection laser (see "the Injection laser",
N.A. Pehtin, S.O. Slipchenko, I.S. Tarasov, D.A. Vinokurov, EN 2259620 C1, 2005), containing politology substrate, quantum-size active area of intrinsic conductivity, the top and bottom of waveguide layers adjacent respectively above and below to quantum-well active region intrinsic conductivity, the area of the emitter of the first type conductivity, adjacent to the bottom of the waveguide layer, the area of the emitter of the second type conductivity, ohmic contact to the field emitter first type of conductivity, ohmic contact to the field emitter second type of conductivity, top and bottom additional layers own conductivity attached respectively to the top and bottom of waveguide layers, and to both sides of quantum-well active region intrinsic conductivity, and ohmic contact to the field emitter second type of conductivity is located on the lower surface of the substrate second type of conductivity, adjacent to the field emitter second type of conductivity, the top and bottom of waveguide layers adjacent respectively to the top and bottom layers own conductivity, the field emitters of the first and second types of conductivity are layers of optical limiting.
Signs of similar coinciding with the essential features are politology substrate, quantum-size active area of intrinsic conductivity, the top and bottom of waveguide layers adjacent respectively above and below to quantum-well active region intrinsic conductivity, the area of the emitter of the first type of conductivity, adjacent to the bottom of the waveguide layer with ohmic contact to the field emitter first type of conductivity, the area of the emitter of the second type conductivity, ohmic contact to the field emitter second type of conductivity.
The reason for impeding the achievement of the technical result is reduced performance due to the inertia of the processes of accumulation and resorption of charge in the active region of the laser.
Known closest to the technical nature of the claimed object is an injection laser for high-speed modulation using dynamic heat carriers (V.I. Tolstikhin and M. Mastrapasqua // Three-terminal laser structure for high-speed modulation using dynamic carrier heating," Appl. Phys. Lett., vol. 67, pp.3868-3870, 1995), containing politology substrate, quantum-size active area of intrinsic conductivity, the top and bottom of waveguide layers adjacent respectively above and below to quantum-well active region intrinsic conductivity, the area of the emitter of the first type of conductivity, adjacent to the bottom of the waveguide layer, the area of the emitter of the second type conductivity, ohmic contact to the field emitter first type of conductivity, ohmic contact to the field emitter second type of conductivity, the area of the base of the first type conductivity connected to the top of the waveguide layer and to the field emitter second type of conductivity, ohmic contact to the area of the base of the second type conductivity, and the field base of the first type of conductivity and emitter second type of conductivity are respectively lower and upper areas of optical limiting.
Signs of a prototype, coinciding with the essential features are politology substrate, quantum-size active area of intrinsic conductivity, the top and bottom of waveguide layers adjacent respectively above and below to quantum-well active region intrinsic conductivity, the area of the emitter of the first type of conductivity, adjacent to the bottom of the waveguide layer, the area of the emitter of the second type conductivity, ohmic contact to the field emitter first type of conductivity, ohmic contact to the field emitter second type of conductivity.
The reason for impeding the achievement of the technical result is reduced performance due to the inertia of the processes of accumulation and resorption of charge in the active region of the laser.
Object of the present invention is to increase the performance of your device.
The technical result is achieved by the integral of the injection laser with frequency modulation of radiation by forced relocation of maximum amplitude of the wave functions of charge carriers entered: top management area of the second type conductivity connected to the top of the waveguide layer, the lower the management scope of the second type conductivity, adjacent to the bottom of the waveguide layer, the lower the control area for the first type of conductivity, adjacent from the top to the substrate, and the bottom - to the lower control area of the second type conductivity and forming with it the p-n junction, ohmic contact to the lower control area of the first type of conductivity, managing metal contact, adjacent from the top to the top management area in the second type of conductivity and forms with it a transition Schottky, while the field emitters of the first and second types of conductivity have horizontal mutual arrangement, upper and lower control area of the second type of conductivity are respectively the upper and lower areas of optical limiting, quantum-size active area forms a heterojunctions of the second type with the top and bottom of waveguide layers, and the bottom border of the conduction band bottom of the waveguide layer is below the lower limit of the conduction of quantum-well active region and up from the bottom of the conduction top of the waveguide layer and the upper bound valence band bottom of the waveguide layer is below the upper boundary of the valence band QW active area and above the upper boundary of the valence band top of the waveguide layer, the top of the waveguide layer forms a heterojunction first type with upper area of optical limiting, lower waveguide layer forms a heterojunction first type with the lower area of optical limiting.
Comparing the proposed device prototype, we see that it contains new matter that is meets the criteria of novelty. Drawing a comparison with analogues, we come to the conclusion that the proposed device meets the criterion of "substantial differences", as analogues not found imposed new signs. The positive effect consisting in the performance increase injection laser.
Figure 1 shows the structure of the proposed integrated injection laser with frequency modulation of radiation by forced relocation of maximum amplitude of the wave functions of charge carriers. Figure 2 shows the band diagram heterostructure laser with polarity control voltage corresponding to the reduced frequency of optical radiation. Figure 3 shows the band diagram heterostructure laser with polarity control voltage corresponding to the high frequency of optical radiation.
Integral injection laser with frequency modulation of radiation through managed relocation of the maximum amplitude of the wave functions of charge carriers contains politology substrate 1, quantum-size active area of intrinsic conductivity 2, top waveguide layer own conductivity 3 and bottom of the waveguide layer own conductivity 4 adjacent respectively above and below to quantum-well active region intrinsic conductivity 2, field emitter first type conductivity 5, adjacent to the bottom of the waveguide layer 4, the area of the emitter of the second type conductivity 6, ohmic contact 7 to the field emitter first type conductivity 5, ohmic contact 8 to the field emitter second type conductivity 6, the upper region of the second type conductivity 9 connected to the top of the waveguide layer 3, the lower the control area of the second type conductivity 10, adjacent to the bottom of the waveguide layer 4, the lower the control area of the first type conductivity 11, adjacent from top to politology substrate 1, and bottom - to the lower control area of the second type conductivity 10 and forming them p-n junction, ohmic contact 12 to the lower control area of the first type conductivity 11, managing metal contact 13, adjacent from the top to the top management area in the second type of conductivity 9 and forms with it a transition Schottky, while the field emitters of the first and second types of conductivity 5, 6 have horizontal mutual arrangement, the upper and lower control area of the second type conductivity 9, 10 are respectively the upper and lower areas of optical limiting, quantum-size active area 2 forms heterojunctions of the second type with the top and bottom of waveguide layers 3, 4, and the bottom border of the conduction band bottom of the waveguide layer 4 is below the lower limit; zone conductance of quantum-well active region 2 and up from the bottom of the conduction top of the waveguide layer 3, and the upper bound valence band bottom of the waveguide layer 4 is below the upper boundary of the valence band of quantum-well active region 2 and above the upper boundary of the valence band top of the waveguide layer 3, the upper waveguide layer 3 forming a heterojunction first type with upper area of optical limiting 9, the lower the waveguide layer 4 forming a heterojunction first type with the lower area of the optical limitations 10. The device operates in the following way.
When applying a positive voltage on the ohmic contact 7 regarding ohmic contact 8, is injection of electrons from the area of the emitter of the second type conductivity 6 at the top of the waveguide layer own conductivity 3 and at the bottom of the waveguide layer own conductivity 4 and injection holes of the field emitter first type conductivity 5 in quantum-well active region intrinsic conductivity 2. If this gets positive voltage at ohmic contact 12 to the control area of the first type conductivity 11, adjacent from the top to the substrate 1 and on the bottom - to the lower control area of the second type conductivity 10 and forming with it a p-n-transition, regarding the control of metal pin 13, adjacent from the top to the top management area in the second type of conductivity 9 and forms with it a transition Schottky, zone chart heterostructure laser changes as shown in figure 2, and is the relocation of the maximum amplitude of the wave functions of electrons in the conduction band to the border between the top of the waveguide layer own conductivity 3 and quantum-well active region intrinsic conductivity 2, and to the border between the bottom of the waveguide layer own conductivity 4 and lower the management scope of the second type conductivity 10, with a maximum amplitude of the wave functions of holes in the valence band peredoziruet to the border between the top of the waveguide layer own conductivity 3 and quantum-well active region intrinsic conductivity 2, which leads to a spatial combination of maximum amplitudes of the wave functions of electrons in the conduction band and holes in the valence band near the border between the top of the waveguide layer own conductivity 3 and quantum-well active region own conductivity 2 and generation of stimulated emission with low frequency radiation.
When applying a positive voltage on managing the metal contact 13, adjacent from the top to the top management area in the second type of conductivity 9 and forms with it a transition Schottky, relatively ohmic contact 12 to the control area of the first type conductivity 11, adjacent from the top to the substrate 1, and bottom - to the lower control area of the second type conductivity 10 and forming with it the p-n junction, and the current positive voltage on ohmic contact 7 regarding ohmic contact 8, the band diagram heterostructure laser takes the form shown in figure 3. This is the relocation of the maximum amplitude of the wave functions of electrons in the conduction band to the border between the top of the waveguide layer own conductivity 3 and top management area of the second type conductivity 9 and the border between the bottom of the waveguide layer own conductivity 4 and quantum-well active region intrinsic conductivity 2, with a maximum amplitude of the wave functions of holes in the valence band peredoziruet to the boundary between quantum-well active region intrinsic conductivity 2 and bottom of the waveguide layer own conductivity 4 and partially to the border between the bottom of the waveguide layer own conductivity 4 and lower the management scope of the second type conductivity 10, which leads to a spatial combination of maximum amplitudes of the wave functions of electrons in the conduction band and holes in the valence band near the border between the bottom of the waveguide layer own conductivity 4 and quantum-well active region intrinsic conductivity 2 and generation of stimulated emission with high frequency radiation.
Thanks managing areas 9 and 10, which are the areas of optical limiting, laser radiation is concentrated mainly in the waveguide layers 3, 4 and quantum-well active region intrinsic conductivity 2.
Thus, the proposed device is an integral injection laser with frequency modulation of radiation by forced relocation of maximum amplitude of the wave functions of charge carriers.
Given that changing polarity control voltage level injection of electrons and holes of the areas emitters remains unchanged, the maximum modulation frequency of stimulated emission injection laser corresponds to the terahertz range, as determined by the inertia managed spatial combinations and split (relocation) of the maximum amplitudes of the wave functions of charge carriers: electrons within quantum-well active region and the top of the waveguide layer, and holes within quantum-well active region and lower waveguide layer.