Broadband shf attenuator

IPC classes for russian patent Broadband shf attenuator (RU 2513709):

H01P1/00 - WAVEGUIDES; RESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)

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/ 2248074

/ 2249279

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FIELD: electricity.

SUBSTANCE: broadband SHF attenuator consists of at least one bit and each bit contains transfer lines at the input and output with identical wave-forming resistance, Schottky-barrier field-effect transistor, two resistors and at that the first resistor is connected in parallel and the second one in-series to the attenuator input and output; ends of the first resistor are connected to the source and the drain of Schottky-barrier field-effect transistor respectively, its source and the first resistor are earthed respectively, ends of the second resistor are connected to transfer lines at the input and output respectively. In each bit of the attenuator the following elements are introduced additionally: the second Schottky-barrier field-effect transistor, three inductance coils and two identical resistors - the third and fourth ones, at that the source of the second Schottky-barrier field-effect transistor is connected to transfer line at the input while its drain is connected to transfer line at the output, ends of the first and second inductance coils are connected to the ends of the first and second resistors respectively, one end of the third inductance coil is connected to transfer line at the input while the other one is connected to the source of the first Schottky-barrier field-effect transistor, gates of each Schottky-barrier field-effect transistor are connected to the source of direct-current control voltage through the third and fourth resistors respectively.

EFFECT: increasing width of the working band, decreasing value of voltage standing-wave ratio and value of SHF signal phase change at change of direct-current control voltage with maintenance of low direct losses of SHF.

5 dwg

The invention relates to electronic equipment, namely, attenuators microwave semiconductor devices, and can be used in electronic equipment for various purposes.

Broadband attenuators microwave characterized by:

- working frequency band, which should be as wide as possible;

the standing wave ratio voltage, which should be as close as possible to unity;

- the magnitude of the change of the phase of the microwave signal when changing a constant control voltage - phase difference, which should be as small as possible;

the value of direct losses microwave, which should be as small as possible;

the change in attenuation - increments of attenuation, which is specified.

Known microwave attenuator comprising at least one category, each of which contains a combination of three resistors, one of which is connected in series, and the other two are parallel to the transmission lines at the input and output of the attenuator, and three electronic keys, which are used MOSFETs with a barrier of a Schottky.

When connected in series the resistor connected to the source and drain of the field-effect transistor with the barrier Schottky and parallel connected resistors made of the same resistance and are located on opposite sides of sequentially connected to resis the ora and, accordingly, each with a eld-effect transistor with a barrier of a Schottky, the origins of which is grounded, and the gates of three field-effect transistors with a barrier of a Schottky serve to feed them control voltage [1].

In which order to simplify the design and reduce the overall size by reducing the number of DC control voltage when you save the settings of the attenuator microwave, direct losses Up and changes the damping AZ in each discharge attenuator introduced two segments of the transmission line length equal to a quarter wavelength transmission lines, and wave impedance greater than an impedance of the transmission lines at the input and output of the attenuator.

Each of the sections of transmission line of length equal to a quarter wavelength included between the respective parallel connected resistor and the drain of the corresponding field-effect transistor with a barrier of a Schottky, and the three gates of field-effect transistors with a barrier of a Schottky interconnected and connected with a source of DC control voltage.

This microwave attenuator reduces the magnitude of the standing wave ratio voltage as the circuit resistors are mutually separated, one connected in series and two in parallel, enabling or disabling which field-effect transistors with a barrier of a Schottky from one DC voltage source, while usage is facilitated by the parallel connection of the resistors and field effect transistors with the barrier Schottky, which leads to the reduction of the reflected signal.

However, the presence in the microwave attenuator of two sections of transmission line with length equal to a quarter wavelength corresponding to the center frequency of the operating band of frequencies, leads to the fact that on the boundary frequencies of the operating band of frequencies removed from the center frequency, apparent resonant nature of these segments, which essentially limits:

first, the increase in the width of the working frequency band,

secondly, the reduction of the standing wave ratio voltage

thirdly, the reduction of the phase change of the microwave signal when changing a constant control voltage.

Known microwave attenuator comprising at least one category, each of which contains resistors, one of which is connected in series, and the other parallel to the transmission lines at the input and output of the attenuator, field-effect transistor with a barrier of a Schottky as an electronic key, and connected in series resistor connected between the input and output transmission lines, the gate field-effect transistor with a barrier of a Schottky connected to the DC control voltage, its source grounded.

In which, to simplify design, reduce weight and size characteristics, reduce the value of direct losses AP and the magnitude of the reflection coefficient AO, achieving the Oia given value of changes in attenuation AZ, first of all, when working at frequencies close to the upper boundary of the range microwave (18-26 GHz), in each discharge attenuator additionally introduced two segments of the transmission line length equal to a quarter wavelength transmission lines.

Each of the two sections of transmission line of length equal to a quarter wavelength in the transmission line, located on different sides of and symmetrically with respect to the serially connected resistor and is connected to the transmission line at the input or at the output, and the second ends of the segments of the transmission lines of length equal to a quarter wavelength transmission lines, interconnected and connected to one end of the parallel connected resistor and the drain of the field-effect transistor with a barrier of a Schottky, and the other end of the parallel connected resistor grounded [2] is a prototype.

Reducing the number of field-effect transistors with a barrier of a Schottky compared to analog, allows to increase the width of the working frequency band, to reduce the amount of phase change of the microwave signal when changing a constant control voltage.

However, the presence of the attenuator, as in the analogue, two resonant sections of transmission line with length equal to a quarter wavelength corresponding to the center frequency of the operating band of frequencies, can significantly increase the relative width of the working bandwidth of smart is to sew the standing wave ratio voltage and to reduce the amount of phase change of the microwave signal when changing a constant control voltage.

The technical result of the invention is to increase the width of the working frequency band, reducing the magnitude of the standing wave ratio voltage and decreasing the amount of phase change of the microwave signal when changing a constant control voltage while maintaining a low magnitude direct losses microwave.

Technical result is achieved by the claimed broadband microwave attenuator comprising at least one discharge

each of which contains a transmission line input and output with the same wave impedance, field-effect transistor with a barrier of a Schottky, two resistors,

the first resistor is in parallel, the second is sequentially input and output of the attenuator, the ends of the first resistor is connected to the source and drain of the field-effect transistor with a barrier of a Schottky accordingly, its source and, accordingly, the first resistor is grounded, the ends of the second resistor is connected to the transmission lines at the input and output respectively.

In each discharge attenuator inputs of the second field-effect transistor with a barrier of a Schottky, three inductors and two identical resistor, the third and the fourth,

if this is the source of the second field-effect transistor with a barrier of a Schottky connected to the transmission line at the input, its drain with the transmission line at the output ends of the first and second inductances are connected with Koh and the AMI of the first and second resistors, respectively, one end of the third inductor is connected to the transmission line at the input, the other with the drain of the first field-effect transistor with a barrier of a Schottky, the gates of each field-effect transistor with a barrier of a Schottky connected with a source of DC control voltage through the third and fourth resistors, respectively, the resistance of the first R₁and the second R₂resistors are determined from the expressions

R₁=Z₀×[2×10^-Δ/20/(k+1)-1],

R₂=Z₀×[k-0.5·(k+1)×10^-Δ/20]^-1,

where Z₀- the value of the surge impedance of the transmission line at the input and output of the attenuator, Ohm;

k - value of standing wave ratio voltage;

Δ is the magnitude of the discrete attenuation dB

resistance of the third and fourth resistors are much bigger than the characteristic impedance of the transmission line at the input or at the output of the attenuator.

Disclosure of the invention.

Introduction to the attenuator of the second field-effect transistor with a barrier of a Schottky and proposed the inclusion of both field-effect transistors with a barrier of a Schottky, so their sources and drains are connected to the ends of the first and second resistors, respectively, provides:

firstly, the simultaneous activation and deactivation of these resistors,

- secondly, the exclusion of the impact resistances of these resistors on the amount of attenuation of the microwave signal at the open on the of evich transistors with a barrier of a Schottky.

And, as a consequence of both, the expansion of the working frequency band, reducing the magnitude of the standing wave ratio voltage and decreasing the amount of phase change of the microwave signal when changing a constant control voltage.

Introduction to the attenuator of the first and second inductances and the proposed connection of their ends with the sources and drains of the first and second field-effect transistors with a barrier of a Schottky accordingly provides compensation capacitive resistance of each field-effect transistor with a barrier of a Schottky when closed field-effect transistors with the barrier Schottky and, as a consequence, the extension of the working frequency band and reducing the magnitude of the standing wave ratio voltage.

Introduction to the attenuator of the third inductance and its proposed connection so that one end of the third inductor is connected to the transmission line at the input, the other with the drain of the first field-effect transistor with a barrier of a Schottky, provides:

first, the compensation of the reactive components of the impedance of the attenuator at the closed field-effect transistors with a barrier of a Schottky,

- secondly, the scheme of the mutual separation of the two field-effect transistors with the barrier Schottky and thereby reducing their mutual influence.

And, as a consequence of both, the expansion of the working frequency band, reducing the coefficient value standing in the wave voltage and decreasing the amount of phase change of the microwave signal when changing a constant control voltage.

The connection of the gates of the first and second field-effect transistors with a barrier of a Schottky source of control voltage through the third and fourth resistors, respectively, and collectively, when the resistance value of each resistor on the order of magnitude larger than the characteristic impedance of the transmission line at the input or at the output of the attenuator microwave, reduces leakage currents through the gates and, as consequence, -

first, a decrease in the amplitude of the reflected microwave signal and

secondly, the decreasing value of standing wave ratio voltage.

Moreover, the absence of the attenuator sections of transmission line of length equal to a quarter wavelength, excludes the presence of spurious resonances, significantly limiting the working frequency band and leads to frequency dependent values of the phase of the microwave signal and, as a consequence, an additional extension of the working frequency band, reducing the magnitude of the standing wave ratio voltage and decreasing the amount of phase change of the microwave signal when changing a constant control voltage.

The invention is illustrated by drawings.

Figure 1 shows the topology of a single discharge declared broadband microwave attenuator, where

- transmission lines at the input and output - 1 and 2, respectively,

the first field-effect transistor with a barrier of a Schottky - 3

- two resistors 4 and 5 PE the first and second, respectively,

- the second field-effect transistor with a barrier of a Schottky - 6,

three inductance - 7, 8, 9 first, second and third, respectively,

- two identical resistor - 10, 11, respectively,

the DC control voltage - 12.

Figure 2 is given its electrical circuit.

Figure 3 gives the frequency dependent magnitude of the standing wave ratio voltage when the value of the DC control voltage of 0, and the voltage cutoff transistor Uotc.

Figure 4 gives the frequency dependent values of the phase of the microwave signal when the value of the DC control voltage is equal to 0 and the voltage cutoff transistor U.

Figure 5 gives the frequency dependent values of direct losses microwave AP and magnitude of attenuation at microwave AZ when the value of the DC control voltage of 0, and the voltage cutoff transistor U.

A specific example of the claimed attenuator microwave.

As an example, consider a single-bit wideband attenuator microwave.

All elements of the broadband microwave attenuator made in monolithic integrated circuits on a semiconductor substrate of gallium arsenide with a thickness equal to 0.1 mm, using classical thin-film technology.

Transmission lines at the input 1 and output 2 are made of a width of conductors 0.08 mm, the ACC is tstuat impedance, equal to 50 Ohm.

MOSFETs with a barrier of a Schottky 3 have a voltage cutoff U equal to the 2nd Century

Resistors R₁4, R₂5 executed by the resistance of 140 Ohms and 15 Ohms, respectively, defined according to the above expression for Δ=-1 dB by sputtering, for example, a layer of tantalum with a thickness of 4 μm.

Inductance 7, 8, 9 are made of a width of the conductor of 0.01 mm and a length of 0.2, and 0.2, 2.5 mm, respectively.

The first resistor 4 is parallel to the second 5 - sequentially input 1 and output 2 of the attenuator, the ends of the first resistor 4 is connected with the source and drain of the first field-effect transistor with a barrier of a Schottky 3, respectively, of its source and, accordingly, the first resistor 4 is grounded, the ends of the second resistor 5 is connected to the transmission lines at the input and output respectively, the source of the second field-effect transistor with a barrier of a Schottky 6 is connected to the transmission line at the input 1, its drain with the transmission line at the output 2, the ends of the first and second inductances 7, 8 are connected to the ends of the first 4 and the second 5 resistors, respectively, one end of the third inductor 9 is connected to the transmission line at the input 1, the other with the drain of the first field-effect transistor with a barrier of a Schottky 3, the gates of each field-effect transistor with a barrier of a Schottky 3, 6 are connected respectively through the same third resistors 10 and 11 fourth source constantly what about the control voltage 12.

The operation of the microwave attenuator consider the example of one category.

When applying to the gates of field-effect transistors with a barrier of a Schottky 3 and 6 DC control voltage U value of 0 V, the DC control voltage 12 they become open.

As a result of this field-effect transistors with a barrier of a Schottky 3 and 6 have low resistance Z.

Resistance Z first field-effect transistor with a barrier of a Schottky 3 is in parallel with the first resistor 4 and parallel to the first inductor 7, so the total impedance Zo, connected in parallel to the input 1 and output 2 of the attenuator will be less than the smaller (Z).

Reactance of the third inductance 9 in the operating frequency band has a greater value. This resistance is grounded through impedance Zo and connected in parallel to the input 1 of the attenuator, has virtually no effect on the amplitude of the microwave signal.

Resistance Z second field-effect transistor with a barrier of a Schottky 6 is in parallel with the second resistor 5 and parallel to the second inductor 8, so the total resistance is connected in series to the input and output of the attenuator will be less than the smaller (Z).

This is a small amount of direct losses microwave Up in a wide operating frequency band.

The standing wave ratio voltage to attenu the Torah close to one.

The phase of the microwave signal in the attenuator is close to 0 degrees.

When applying to the gates of field-effect transistors with a barrier of a Schottky 3 and 6 negative control voltage U exceeds the absolute value of the voltage cutoff transistor U, they will be closed. As a result of this field-effect transistors with a barrier of a Schottky 3 and 6 have a large capacitance Z.

The values of the inductances 7 and 9 in the operating frequency band offset capacitance of the first field-effect transistor with a barrier of a Schottky 3, so that in parallel to the input 1 of the attenuator will be included resistance of the first resistor 4.

The values of the inductances 8 and 9 in the operating frequency band offset capacitance of the second field-effect transistor with a barrier of a Schottky 6, so that the sequentially input 1 and output 2 of the attenuator will be included resistance of the second resistor 5.

When such inclusion in the attenuator will work the first 4 and second 5 resistors, the attenuation at the output will be determined by the resistances of these resistors.

For the considered example, the attenuation is 1 dB.

The standing wave ratio voltage attenuator close to one.

The phase of the microwave signal in the attenuator will also be close to 0 degrees.

On prepared samples attenuator microwave were measured value of direct losses Up to the value of satuan who I Am, the standing wave ratio voltage, the change in phase of the microwave signal in the operating frequency band.

The results shown in figure 3, figure 4, figure 5.

As can be seen from figure 3:

- the width of the working frequency band is 42 GHz-18 GHz=24 GHz, which is 1.25 times greater than that of the prototype,

- the magnitude of the standing wave ratio voltage in the open and closed States of the field-effect transistors with a barrier of a Schottky does not exceed 1.5, 1.5 times less than that of the prototype.

As can be seen from figure 4:

- the change in phase of the microwave signal at the open and closed States of the field-effect transistors with a barrier of a Schottky working in the frequency range from 18 GHz to 42 GHz does not exceed one degree, which is an order of magnitude less than that of the prototype,

As can be seen from figure 5:

- the value of direct losses in the microwave attenuator in the working frequency range of 18 GHz to 42 GHz is less than 0.5 dB, which is approximately equal to the prototype,

and attenuation equal to 1.5 dB, so that the change in the value of attenuation of the attenuator microwave is 1 dB.

Thus, the claimed microwave attenuator will provide in comparison with prototype:

the increase in the operating bandwidth of 1.25 times,

- reducing the standing wave ratio voltage 1.5 times,

- decrease 10 times the magnitude of the phase change of the microwave signal when the open and closed States of the field-effect transistors with a barrier of a Schottky.

This di the specific broadband microwave attenuator can be especially in demand in pulse - pulse radar systems.

Sources of information

1. RF patent №2314603, IPC H01P 1/22, priority 10.02.2006, publ. 10.01.2008, bull. No. 1.

2. RF patent №2340048, IPC H01P 1/22, priority 26.04.2007, publ. 27.11.2008, bull. No. 33 - a prototype.

Broadband microwave attenuator comprising at least one category, each of which contains a transmission line input and output with the same wave impedance, field-effect transistor with a barrier of a Schottky, two resistors, the first resistor is in parallel, the second is sequentially input and output of the attenuator, the ends of the first resistor is connected to the source and drain of the field-effect transistor with a barrier of a Schottky accordingly, its source and, accordingly, the first resistor is grounded, the ends of the second resistor is connected to the transmission lines at the input and output, respectively, characterized in that thein each discharge attenuator inputs of the second field-effect transistor with a barrier of a Schottky, three inductors and two identical resistor third and fourth, while the source of the second field-effect transistor with a barrier of a Schottky connected to the transmission line at the input, its drain with the transmission line at the output ends of the first and second inductances are connected to the ends of the first and second resistors, respectively, one end of the third inductor is connected to the transmission line at the input, the other is - with the drain of the first field-effect transistor with a barrier of a Schottky, the gates of each field-effect transistor with a barrier of a Schottky connected with a source of DC control voltage through the third and fourth resistors, respectively, the resistance of the first R₁and the second R₂resistors are determined from the expressions
R₁=Z₀×[2×10^-Δ/20/(k+1)-1],
R₂=Z₀×[k-0.5·(k+1)×10^-Δ/20]^-1,
where Z₀- the value of the surge impedance of the transmission line at the input and output of the attenuator, Ohm;
k - value of standing wave ratio voltage;
Δ is the magnitude of the discrete attenuation dB,
resistance of the third and fourth resistors are much bigger than the characteristic impedance of the transmission line at the input or at the output of the attenuator.