Electronic circuit and/or microelectromechanical system with radiation source of mobile charge carriers

FIELD: electricity.

SUBSTANCE: invention relates to electronic engineering and microelectromechanical systems. Electronic circuit or microelectromechanical system with radiation source of mobile charge carriers (isistor) contains at least two areas - the first areas and the second one. The first area consists of radioisotopic material emitting mobile charge carriers due to radioactive emission while the second area consists of non-radioisotopic material accepting the above mobile charge carriers introduced into the material. These two areas are either located at distance less than travel distance of the above mobile charge carriers emitted by the first area of radioisotopic material, or the first area of radioisotopic material emitting mobile charge carriers is located at surface of the second area of non-radioisotopic material, or the first area of radioisotopic material emitting mobile charge carriers in dissipated form or in the form of assembled structure inside the area of non-radioisotopic material.

EFFECT: invention allows creation of active isistor device having instant readiness for operation without time required to connect it to the voltage source in order to ensure passage of mobile charge carriers with certain current level through it.

13 cl, 1 tbl, 6 dwg, 1 ex

Electronic circuit and/or microelectromechanical system with a radiation source movable charge carriers.

The invention relates to electronics and microelectromechanical systems using radioactive source mobile charge carriers. On the basis of this design structure can be built electrical circuits, or microelectromechanical systems, not dependent on an external power source, at least during the time of half-life used in the product of the radiation source moving charge carriers.

Known electronic active devices, which upon application thereto of electrical potentials (voltages) have the ability to control the amount of current, that is, the level of flow of mobile charge carriers passing through them, and thanks to these active electronic devices serve as the basis for constructing electronic circuits and/or microelectromechanical systems. Such electronic active devices are: vacuum triode, tetrode, pentodes and similar devices, semiconductor - bipolar transistor and the field devices and other devices used to build electronic circuits and/or microelectromechanical systems (Si. "Physics of semiconductor devices". M.: Mir, 1984.).

The disadvantage of such active the devices, is the delay in time of their transition from the standby mode to the operation mode, because of their work and the passage of the current through them, the flow of mobile charge carriers, it is necessary as the application thereto of electrical potentials (voltages), which in itself excludes permanent availability of such active devices to work, and you want to spend some time on the external conclusions the electronic circuit and/or microelectromechanical systems, and to make and full completion of all transients and software necessary for the transition to electronic circuits and/or microelectromechanical system mode rest in the operation.

The problem to which this invention is directed, is the achievement of the technical result consists in the creation of electronic circuits and/or microelectromechanical systems having a constant readiness to transition from the standby mode (or sleep mode) to work in active mode, which eliminates the time loss due to the passage of transient processes in such transition.

The problem is solved due to the fact that a new electronic circuit and/or microelectromechanical system, characterized in that it contains an electroradiation element(s) with radioactive what source(s) of mobile charge carriers, consisting at least of two areas, the first and second, each of which is made either from metal or from a semiconductor or a dielectric or their associations, the atoms, which are either different nuclides, or at least atoms of different isotopes of the same chemical element;

atoms above the first region are radioactive nuclides, or at least, radioactive isotopes whose nuclei emit movable charge carriers,

the atoms of the above-mentioned second region are stable nuclides, or at least stable isotopes that are not radioactive and kernel which does not radiate;

above, two areas, first and second, have either inside the third area, separately from one another, or one region, the first or the second feature on or inside one of them, the second or the first;

the above two areas have mentioned inside the third region so that the distance between the first and second regions and was not greater than the free path length in the third area, above the moving charge carriers emitted from the above-mentioned first region;

the location of the above two areas, one area inside a different area, make so that the first region with atoms or from different nuclides, or edge the least atoms of different isotopes of the same chemical element that emits a movable charge carriers, are produced either in a dispersed form of particles of size down to the molecular or atomic, or the first region with atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers, have, within the second region with a stable nuclides in the form of the piece(s) of the substance, limited(s) of the compound molecules or atoms;

while the above-mentioned first region has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers, represents only the at least one type of different nuclides or, at least, isotopes of the same chemical element;

while the above-mentioned first region has atoms, or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers, represents only the at least two types of atoms or from different nuclides, or at least two types of atoms of different isotopes of the same chemical element;

while the above-mentioned first region has atoms or from different nuclides, or at least atoms of different the th isotopes of the same chemical element, emitting movable charge carriers, is a dielectric nervosity material

containing within itself or concentrated in a single location or in the form of inclusions dispersed in the dielectric material, at least one type of atom or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers having the property of radiation of mobile charge carriers;

while the above-mentioned first region has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers with radiation of mobile charge carriers, represents at least one dielectric material or chemical compounds included in the composition of the molecules forming the above-mentioned dielectric material;

while the above-mentioned second area has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, and in which the flow of mobile charge carriers from the above-mentioned first region is a dielectric region;

while the above is I the second area, which has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, which is the flow of mobile charge carriers of the above-mentioned first region with atoms, or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits radioactive radiation, is a semiconductor;

while the above-mentioned second area, which has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, which is the flow of mobile charge carriers of the above-mentioned first region with atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits radioactive radiation, is a metal;

while the above-mentioned second area, which has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, which is the flow of mobile charge carriers from the above-mentioned first region with atoms or from different nuclides, or at least ATO is AMI from different isotopes of the same chemical element, emitting radioactive radiation is one of the areas of the vacuum triode;

while the above-mentioned second area, which has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, which is the flow of mobile charge carriers from the above-mentioned first region with atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits radioactive radiation, represents at least one of the areas of the bipolar semiconductor transistor;

while the above-mentioned second area, which has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, which is the flow of mobile charge carriers from the above-mentioned first region with atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits radioactive radiation, represents at least one semiconductor field effect transistor;

while the above-mentioned movable charge carriers emitted from the above-mentioned first the second area, are electrons;

while the above-mentioned movable charge carriers emitted from the above-mentioned first area are positrons.

Distinctive features of patentable inventions is that in the proposed design of a new electronic circuit or microelectromechanical systems there are two areas of the first and second, first contains a radiation source movable charge carriers, and the second contains the receiver of these mobile charge carriers.

This set of distinctive features allows you to achieve the technical result consists in the creation of a new electronic circuit or microelectromechanical systems from a radiation source movable charge carriers, in sleep mode observed constant readiness to transition to the operation mode, which eliminates the loss of time for connecting the electronic circuit to the voltage source and converting it into a working mode.

The invention is illustrated by drawings.

Figure 1÷6 schematically presents drawings of images of sections of the structure of an electronic circuit with a radiation source movable charge carriers.

Figure 1 shows schematically a longitudinal section of the structure of an electroradiation element of an electronic circuit with a radiation source moving media is Arada, claim 1 of the formula, here the first and the second region are located in the third region separately from each other, the first region with a radiation source movable charge carriers 1.1, located at a distance of 1.2 from the second region of receipt of mobile charge carriers 1.3 where:

1.1 - radiation source movable charge carriers of the first field,

1.2 - the gap between the first region with a radiation source movable charge carriers 1.1 and the second entrance region of the moving charge carriers 1.3;

1.3 - semiconductor receipt area of mobile charge carriers.

Figure 2 shows schematically a longitudinal section of the structure of an electroradiation element of an electronic circuit with a radiation source movable charge carriers, claim 1 of the formula, here the first region of the radiation source movable charge carriers 2.1 is located on the surface of the 2.2 second region 2.3 receipt of mobile charge carriers, where:

2.1 - radiation source movable charge carriers of the first field,

2.2 - surface boundary between the first region 2.1 and the second area 2.3;

2.3 second receipt area of mobile charge carriers.

Figure 3 shows schematically a longitudinal section of the structure of an electroradiation element of an electronic circuit with a radiation source movable charge carriers, (1) f is rmula, here the first region of the radiation source movable charge carriers 3.1 is located within 3.2 second receipt area of mobile charge carriers 3.3,

where:

3.1 the first region of the radiation source movable charge carriers is located within the second region of receipt of mobile charge carriers 3.3;

3.2 - the border of the first area, limiting the location of a radiation source movable charge carriers 3.1 inside the second region of receipt of mobile charge carriers 3.3;

3.3 - semiconductor receipt area of mobile charge carriers.

Figure 4 schematically shows a section structure of the integrated electronic circuit is taken as an example for the basis for the creation of an electronic circuit with a radiation source movable charge carriers. This structure is a CMOS IC, shown at the stage of manufacture after the process of coating metal and forming therein a metal wiring, where:

4.1 - silicon semiconductor wafer of the first conductivity type,

4.2 - pocket in the form of a region of semiconductor of the second conductivity type,

4.3 - contact to the field of protection of the semiconductor wafer of the first conductivity type,

4.4 - contact to the field of protection of the semiconductor wafer of the second conductivity type,

4.5 - metal is svodki,

4.6 - the end of the end gate,

4.7 - field dielectric separating the gate 4.6 and semiconductor plate 4.1.

Figure 5 schematically shows a section of a semiconductor structure of an electronic circuit with a radiation source movable charge carriers, such integrated electronic circuit, shown in figure 4, taken as a basis. When you create an electronic circuit with a radiation source movable charge carriers in the structure of the used metal - radiation source movable charge carriers on the surface of the semiconductor wafer, is made in two constructive places supply circuit (circuit Ground),

where:

5.1 - silicon semiconductor wafer of the first conductivity type,

5.2 - pocket in the form of a region of semiconductor of the second conductivity type,

5.3 contact to the field of protection of the semiconductor wafer of the first conductivity type,

5.4 - contact to the field of protection of the semiconductor wafer of the second conductivity type,

5.5 metal wiring,

5.6 - material gate,

5.7 - field dielectric separating the gate 56 and the semiconductor plate 5.1,

5.8 - radiation source movable charge carriers on the surface of the semiconductor wafer of the second conductivity type semiconductor 5.1 in the area of the contact window to the protection 5.4,

5.9 - radiation is the source of mobile charge carriers on the surface of the semiconductor wafer of the second conductivity type semiconductor 5.1 in the area of the contact window to the area of the source of the MOS transistor

5.10 - protective layer pestiviruses dielectric.

Figure 6 schematically shows a section of a semiconductor structure of an electronic circuit with a radiation source movable charge carriers, such integrated electronic circuit, shown in figure 4, taken as a basis. When you create an electronic circuit with a radiation source movable charge carriers in the structure of the used metal - radiation source movable charge carriers on the surface of the semiconductor wafer, is made in two structural areas of the circuit of the Earth (the food chain),

where:

6.1 - silicon semiconductor wafer of the first conductivity type,

6.2 - pocket in the form of a region of semiconductor of the second conductivity type,

6.3 - contact to the field of protection of the semiconductor wafer of the first conductivity type,

6.4 - contact to the field of protection of the semiconductor wafer of the second conductivity type,

6.5 metal wiring,

6.6 - the end of the end gate,

6.7 - field dielectric separating the gate 68 and the semiconductor wafer 61,

6.8 - radiation source movable charge carriers on the surface of the semiconductor wafer of the second conductivity type semiconductor 6.1 in the area of the contact window to the protection of 6.4,

6.9 radiation source movable charge carriers on the surface of the semiconductor, Nikolai plate of the second conductivity type semiconductor 6.1 in the area of the contact window to the area of the source of the MOS transistor

6.10 - protective layer pestiviruses dielectric.

Job description of an electronic circuit and/or microelectromechanical system with a radiation source movable charge carriers

The inventive electronic circuit and/or microelectromechanical system with a radiation source movable charge carriers has three areas, shown schematically in figure 1. Of these two areas 1.1 and 1.3, figure 1 and 2.1 and 2.3, figure 2, and 3.1 and 3.3, is shown in figure 3, respectively, are the main areas that make up an electroradiation element that converts, the impact of mobile charge carriers generated by radiation into an electrical voltage.

The first main area, indicated in figure 1-3, respectively, figures 1.1, 2.1, 3.1, are radiation sources movable charge carriers, and their image has coverage points. Figure 1-2 point black, and 3 point white,

The second main area 1.3, 2.3, 3.3, indicated in figure 1-3, respectively, is the receiver, which collects emitted from the first field of the moving charge carriers. Schematic representation of the major areas 1.3, 2.3, 3.4, depicted in figure 1-3, respectively, has a hatch in the form of oblique lines running from left bottom to right top.

In figure 1 these two main areas, the first 1.1 and 1.3 second electronic circuit the radiation source movable charge carriers, located inside the third area 1.2 and the same third region 1.2 two main areas, the first 1.1 and 1.3 second electronic circuits are divided among themselves. The third area 1.2 is a vacuum, or any nuclide, or at least, any isotope. The width of the gap located between the regions of the first region 1.1 and the second region 1.3, asked the third area 1.2, does not exceed the value of the free run in the third region 1.2 of mobile charge carriers, radiated from the first region 1.1. The structure of an electroradiation element consists of three areas: the first area 1.1, the second region 1.3 and the third area 1.2.

In figure 2 the two main first 2.1 and 2.3 second region, forming an electroradiation element that converts formed by the radiation of mobile charge carriers in the electric voltage in the electronic circuit with a radiation source movable charge carriers adjacent to each other in their surfaces, the boundary between which is shown as a line 2.2.

Figure 3 the two main areas, the first 3.1 and 3.3 second, forming an electroradiation element that converts formed by the radiation of mobile charge carriers in the electric voltage of an electronic circuit with a radiation source podi the different charge carriers, which penetrate into each other, resulting in the first area 3.1 is within the second region 3.3. The boundary of the first region 3.1 inside the second area, 3.3, depicted by the line marked 3.2.

Within this boundary 3.2 nuclide, or at least, any isotope are either in a dispersed form, with a minimum element size of an atom of nuclide or molecules containing, or as part of a nuclide or a piece of matter from molecules containing, or at least, any isotope, with the minimum element is the size of the "thread" of the series connection of single atoms of the nuclide, or at least, any isotope or molecules it contains.

In all the structures shown in figure 1÷3, the mobile charge carriers generated in the first field, labeled 1.1, 2.1, 3.1, respectively, and being rejected, being introduced into the second region, oboznachennoe 1.3, 2.3, 3.3, respectively. As a result, in the second area, changing the concentration of mobile charge carriers, resulting in a change of the electric potentials of the different locations of the second region. The resulting potentials form a current mobile carriers seeking these potentials to equalize with each other, and provides the necessary conditions for the operation of any active devices.

RAB is the active devices, what is happening at the expense of introducing mobile charge carriers, does not require external power, thanks to the active devices survive in "sleep" mode.

A second area of the electronic circuit and/or microelectromechanical system with a radiation source movable charge carriers, where these mobile charge carriers are and where their presence in forming an electroradiation element that converts effect formed by the radiation of mobile charge carriers in the electric voltage may be a cathode, a grid or anode of the triode, tetrode or pentode or other semiconductor or vacuum devices.

When using semiconductor in the role of the second region in the electronic circuit and/or microelectromechanical system with a radiation source movable charge carriers where these mobile charge carriers are and where their presence causes a change in potential, can be any region of the active or passive semiconductor device: emitter, collector or base of a bipolar transistor, the drain, source, gate or the substrate of the field effect transistor with insulated gate.

Thus, in any electronic device that specifies the current mobile carriers, can be used an electroradiation ale is NT and applied electronic circuit and/or microelectromechanical system with a radiation source movable charge carriers.

An example of an electronic circuit with a radiation source movable charge carriers is shown in figure 4÷6, which shows its implementation, in a field effect transistor with an insulated gate, and based on it the basis for schemes or complementary CMOS devices.

Figure 4 schematically shows the image patterns CMDP IP, which is used as an example implementation of an electronic circuit with a radiation source movable charge carriers.

Structure CMDP IP, schematically presented in figure 4, has two sections semiconductor 4.1 and 4.2, having a different conductivity type which are formed of different types of conductivity MIS transistors. Drains 4.5 in the form of diffusion regions of a conductivity type opposite to the conductivity type of the semiconductor, in which they are created, separated from the roots, made in the form of diffusion regions of a conductivity type opposite to the conductivity type of the semiconductor, polysilicon gate 4.6, isolated from the semiconductor by a dielectric 4.7. On the other hand from the shutter 4.6, on the surface of the semiconductor region are the source of such areas runoff 4.6. On the field source, field-effect transistors of different conductivity types, serves the opposite potential power. When applying to the gates 4.7 any capacity, a certain polarity, otkryvaetsja transistor of one conductivity type and closes MOS transistor of another conductivity type, and when changing the polarity of the potential on the gate 4.7 on the opposite, changing the state of the field-effect transistors, open - closed and closed - open. Thus, when switching MOS transistors output capacity of wastewater change their potential by joining (or leaving) the moving charge carriers. In the generator of electrical energy, which is the power source, the mobile charge carriers appear when converting chemical, mechanical, heat or any other form of energy into electrical energy. Usually this kind of Converter is a large bulky device that is not compatible with electronic, microelectronic, and especially made for nanotechnology canons, hollow to the electronic equipment from the power generator, which is a power source that supplies mobile platforms are only elektroprovodnyi, usually metal, engaged in the supply of mobile media.

Figure 5÷6 depicts examples of implementation of resistor, i.e. an electronic circuit with a radiation source movable charge carriers based on the use of IP, based on the complementary MOS transistors, the structure of which is depicted in figure 4. Figure 5 and 6, the depicted implementation, which include, in the accordance with paragraph 1 of the claims, two areas: one area containing material of the radioisotope, 5.8, 5.9 figure 5 and 6.8, 6.9 figure 6, and another region containing the semiconductor substrate with areas 5.1, 5.2, with different conductivity, figure 5 and fields 6.1, 6.2, with different conductivity, figure 6. In addition, the material of the radioisotope is placed in accordance with paragraph 1 of the claims, at the semiconductor surface in the contact box, made in the insulator covering the semiconductor. However, in accordance with paragraph 2 of the claims, the material of the radioisotope is placed on the semiconductor surface in the contact window areas: the origins of 5.8, and the protection of 5.9 figure 5 and the origins of 6.8, and the protection of 6.9 figure 6. When this semiconductor region which receives the movable carriers, in accordance with paragraphs 3, 4, 5 claims, represent the areas of the field of semiconductor MOS transistor. However, in accordance with paragraphs 6 and 7 of the claims, the moving charge carriers emitted from the radioisotope material are electrons, 5 or 6, or mobile charge carriers emitted from the radioisotope material are positrons, 6 or 5.

Figure 5 shows a radioisotope material 5.8 and 5.9, located on the surface of a semiconductor pocket region of a semiconductor of the second type is Vedemosti 5.2, in places of contact Windows for security diffusion 5.4 and to the source of MOS transistor of the first conductivity type 5.9.

Figure 6 depicts the radioisotope material 6.8 and 6.9, located on the surface of a semiconductor pocket region of a semiconductor of the first conductivity type 6.1, in places of contact Windows for security 6.3 diffusion and source of the MOS transistor of the second conductivity type.

Work radioisotope electronic circuit is as follows.

Emitted in an electroradiation element radioisotope material 5.8 and 5.9 figure 5 or 6.8 and 6.9 in Fig 6, the mobile charge carriers are introduced into the semiconductor material 1 and or 2, create a change of potential in the places of their location, which changes the potentials in different parts of the semiconductor and the semiconductor formed by currents moving media, providing the necessary conditions for active semiconductor devices. So, carrying a negative charge of the electrons, once in the sources of MOS transistors and their protected areas, lead to a lowering of the potential, which is equivalent to applying in these places a negative potential. And positrons, bearing a positive charge, once in the sources of the MOS transistors and their protected areas, leading to increased capacity, which is equivalent to applying in these places a positive sweat is nsiala. As a result, the structure CMDP IP set operating mode and created all the conditions for it to work, if this IP is not connected to external power supply voltage.

Example radioisotope electronic circuits

1. A radioisotope is an electronic circuit manufactured on the basis of IP in a complementary field of MOS transistors arranged on the silicon wafer 1 (1÷5) electronic conductivity type with orientation (100) and a resistance of 4.5 Ω·cm, the top of which is the gate oxide 6 with a thickness equal to 20 nm, which is the gate of polycrystalline silicon of a thickness of 0.5 μm. The thickness of the dielectric matrix, which opened the contact window to the regions located in the semiconductor wafer equal to 0.5 μm. The thickness of the metal wiring 10-13 equal to 1 μm. Material isotope emitting electrons, is an isotope of silicon Si, the amount of which depends on the power consumption P and the time of operation is shown in table 1.

So for power consumption IP P=1 W and frequency f=10⁸Hz, operating voltage U=5, then the number of electrons required for IP for 1 second^ΣN_E=^ΣQ_H/q=P/Ufq=1×10¹⁹/(5×10⁸x 1.6)~10¹⁰pieces, this number corresponds to the required number of atoms of an isotope to work for 1 second. And when the length R of the bots 1 year, the required number of electrons and/or atoms of the isotope is 31104000×10 ¹⁰pieces or ~3,1×10¹⁷units This is the number of atoms of the isotope has a different overall parameters for different isotopes. Table 1 presents the values of these parameters for different isotopes.

1. Diagram of the electronic or MEMS radiation source movable charge carriers, characterized in that it contains at least two areas, first and second, each of which is made either from metal or from a semiconductor or dielectric, the atoms of which are either different nuclides, or at least atoms of different isotopes of the same hee the practical element;
atoms above the first region are radioactive nuclides or, at least, radioactive isotopes whose nuclei emit movable charge carriers,
the atoms of the above-mentioned second region are stable nuclides or, at least, stable isotopes that are not radioactive and kernel which radiate nothing;
the above two areas, first and second, have either inside the third area, separately from one another, or one region, the first or the second feature on or inside one of them, the second or the first;
the above two areas have mentioned inside the third region so that the distance between the first and second regions was not greater than the free path length in the third field above the moving charge carriers emitted from the above-mentioned first region;
the location of the above two areas, one area within another region produce so that the first region with atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers, are equipped inside the second region with a stable nuclide or in a dispersed form in the form of particles of different sizes down to the molecular or atomic, or the first region with atoms or from the s nuclides, or at least atoms of different isotopes of the same chemical element that emits the mobile charge carriers have inside the second region with a stable nuclides in the form of a piece of matter of the joint structure, limited until the threadlike molecules or atoms.

2. Diagram of the electronic or MEMS radiation source movable charge carriers, under item 1, characterized in that the above-mentioned first region has atoms, or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers, represents only the at least one type of different nuclides, or at least, isotopes of the same chemical element.

3. Diagram of the electronic or MEMS radiation source movable charge carriers according to claim 1, characterized in that the above-mentioned first region has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers, represents only the at least two types of atoms or from different nuclides, or at least two types of atoms of different isotopes of the same chemical element.

4. Diagram of the electronic or MEMS with radiatio is the principal source of mobile charge carriers according to claim 1, characterized in that the above-mentioned first region has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers, is a dielectric nervosity material containing within itself or concentrated in a single location or in the form of inclusions dispersed in the dielectric material, at least one type of atom or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers having the property of radiation of mobile charge carriers.

5. Diagram of the electronic or MEMS radiation source movable charge carriers, according to claim 1, characterized in that the above-mentioned first region has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits a movable charge carriers with radiation of mobile charge carriers, represents at least one dielectric material, or chemical compounds included in the composition of the molecules forming the above-mentioned dielectric material.

6. Diagram of the electronic or MEMS radiation source ACC is mportant charge carriers according to claim 1, characterized in that the above-mentioned second area has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, and in which the flow of mobile charge carriers of the above-mentioned first region is a dielectric region.

7. Diagram of the electronic or MEMS radiation source movable charge carriers according to claim 1, characterized in that the above-mentioned second area, which has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, which is the flow of mobile charge carriers of the above-mentioned first region with atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits radioactive radiation, is a semiconductor.

8. Diagram of the electronic or MEMS radiation source movable charge carriers according to claim 1, characterized in that the above-mentioned second area, which has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation in odorou is the flow of mobile charge carriers of the above-mentioned first region with atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits radioactive radiation, is a metal.

9. Diagram of the electronic or MEMS radiation source movable charge carriers according to claim 1, characterized in that the above-mentioned second area, which has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, which is the flow of mobile charge carriers of the above-mentioned first region with atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits radioactive radiation is one of the areas of the vacuum triode.

10. Diagram of the electronic or MEMS radiation source movable charge carriers according to claim 1, characterized in that the above-mentioned second area, which has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, which is the flow of mobile charge carriers of the above-mentioned first region with atoms or from different nuclides, or at least atoms of different isotopes of the same hee is practical element, emitting radiation, represents at least one of the areas of the bipolar semiconductor transistor.

11. Diagram of the electronic or MEMS radiation source movable charge carriers according to claim 1, characterized in that the above-mentioned second area, which has atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that does not emit radiation, which is the flow of mobile charge carriers of the above-mentioned first region with atoms or from different nuclides, or at least atoms of different isotopes of the same chemical element that emits radioactive radiation, represents at least one semiconductor field-effect transistor.

12. Diagram of the electronic or MEMS radiation source movable charge carriers according to claim 1, characterized in that the mobile charge carriers emitted from the above-mentioned first region are electrons.

13. Diagram of the electronic or MEMS radiation source movable charge carriers according to claim 1, characterized in that the mobile charge carriers emitted from the above-mentioned first region are positrons.