Display device. RU patent 2510931.

FIELD: physics, optics.

SUBSTANCE: invention relates to a display device equipped with an optical sensor in a pixel region. Display device has optical sensor having a highly sensitive photosensitive element. The photosensitive element is provided with a diode (D1), reset signal wiring (RST) that supplies a reset signal, readout signal wiring (RWS) that supplies a readout signal, a storage node whose potential (V_INT) changes in accordance with the amount of light received by the diode (D1) in the period from when the reset signal is supplied until when the readout signal is supplied, an amplification element (C1) that amplifies the potential (V_INT) in accordance with the readout signal, and a sensor switching element (M2) for reading out the potential amplified in the output wiring. The potential of the screening film (LS), provided on the back surface of the diode, is fixed equal to a constant potential (V_LS) which satisfies the following relationship: V_LS≥V_RST.H.

EFFECT: high sensitivity and high signal-to-noise ratio in a photosensor.

17 cl, 63 dwg

2420-184876RU/085

THE TECHNICAL FIELD TO WHICH THE INVENTION RELATES

The present invention relates to a display device with an optical sensor with a photosensitive element, such as photodiode or phototransistor, and, in particular, refers to the device display, equipped with optical sensors in the area of pixels.

THE LEVEL OF TECHNOLOGY

Traditionally offered a display device with an optical sensor, which is equipped with a one-dimensional elements, such as photodiodes in his pixels, and which are, therefore, able to detect the brightness of external illumination and record the image object is approaching its display panel.

Such a display device with an optical sensor, it is supposed to use as a display device for two-way communication or as a display device to feature a touch panel. In normal display device with an optical sensor, when known components, such as, for example, the signal line and scanning lines, TFT (thin film transistors) and electrodes pixels formed on the substrate active matrix using the technology of processing of semiconductor materials, photodiodes, etc. is formed on the substrate active matrix using the same technology (see JP 2006-3857A).

As to the substrate active matrix formed conventional optical sensor, that is given as an example configuration that is disclosed in W0 2007/145346 and W0007/145347 shown in Fig. 62. Conventional optical sensor is shown in Fig. 62 consists of the following components: photodiode D1, capacitor C2 and transistor M2. With anode D1 photodiode connected RST line to signal reset. With cathode photodiode D1 is connected to one of the electrodes of the capacitor C2 and the transistor gate M2. Drain transistor M2 connected to the VDD line, and its source is connected to the line OUT. The other electrode capacitor C2 is connected to the line RWS to signal reading.

In this configuration, the output signal V PIX sensor that corresponds to the amount of light that is received by a photo diode D1, may be obtained by submitting a reset signal and signal reading, respectively, for the RST line and on line RWS in appropriate given points in time. Here the normal functioning of the optical sensor is shown in Fig. 62 explained with reference to Fig. 63. It should be noted that in Fig. 63 low level (equal to -7 C) the reset signal is labeled "V RST.L ", high level (equal to 0) the reset signal is labeled "V RST.H, low level (equal to 0) signal reading labeled "V RWS.L ", and the high level (equal to, for example, 15 In) signal reading labeled "V RWS.H ".

First, when the line RST signal V RST.H relief with a high level photodiode D1 has a direct shift, and, therefore, the potential INT V of the transistor M2 is expressed by the following formula (1):

V INT =V RST.H-V F , (1)

where V F is the forward voltage of the photo diode D1. Because INT V is lower than the threshold voltage of the transistor M2, the transistor M2 is non-conductive during reset.

Then the signal is reset again becomes having low potential V RST.L (at time t RST , shown in Fig. 63), and thus begins the integration period of the photocurrent (registration period, which is a period marked INT T , which is shown in Fig. 63). In the period of integration of the photocurrent is proportional to the amount of light falling on the photo diode D1, stems from the capacitor C2, resulting in discharges the capacitor C2. Accordingly, potential INT V of the transistor M2 at the end of integration period is expressed by the following formula (2):

V INT =V RST.H-V F-ΔV RST ·C PD /C TOTAL-PHOTO I ·T INT /C TOTAL , (2)

where ΔV RST - height pulse the reset signal (V RST.H-V RST.L ), I, PHOTO - photocurrent photodiode D1 INT T - the duration of the integration period. C PD - capacity of the photo diode D1. C TOTAL - the sum of the capacity of the capacitor C2, capacitance C PD PD D1 and capacity C TFT transistor M2. Besides, during the integration period, since V INT is lower than the threshold voltage of the transistor M2, the transistor M2 is non-conductive.

After the end of integration period in time t RWS , shown in Fig. 63, signal level RWS reading increases, and, consequently, the period begins reading. It should be noted that the period of reading lasts as long as the signal level RWS reading remains high. When this happens injection of charges in the capacitor C2. As a result, the potential INT V of the transistor M2 is expressed by the following formula (3):

V INT =V RST.H-V F-ΔV RST ·C PD /C TOTAL-PHOTO I ·T INT /C TOTAL +ΔV RWS ·INT C /C TOTAL , (3)

where ΔV RWS - the height of the pulse signal reading (V RST.H -V RWS.L ). The potential INT V of the transistor M2 becomes higher than its threshold voltage, and it causes that the transistor M2 becomes conductive. Thus, the transistor M2, together with transistor M3 offset provided at the end of the line OUT in each column, function as amplifier istokova the repeater. In other words, the output voltage V PIX sensor of the transistor M2 is proportional to the integral of the photocurrent photodiode D1 during the integration period.

It should be noted that in Fig. 63 signal form, denoted by the solid line represents the change of potential INT V in the case when the amount of light falling on the photo diode D1, little. The shape of the signal is indicated by a dashed line represents the change of potential INT V in the case when the amount of light falling on the photo diode D1, is at the level of saturation. The value ΔV SIG , shown in Fig. 63, is a potential difference is proportional to the amount of light falling on the photo diode D1. The value ΔV INT shown in Fig. 63, is a value, which increases the potential V INT when signal read from the line RWS on optical sensor during reading.

DISCLOSURE OF THE INVENTION

In the above display device with an optical sensor in the pixel, the difference between the corresponding potentials cumulative node in cases with different values of illumination (for example, in the case of a dark condition and when light falls on the level of saturation) at the end of the period of accumulation is equal to the difference between the respective potentials site accumulation in the foregoing appropriate, after they gain during the period reading. In other words, the difference between potential (designated here as "V INT1 ") cumulative site at the end of period accumulation in the case of dark status and potential (designated here as "V INT2 ") cumulative site at the end of period accumulation in the case, when light falls on the level of saturation, equal to the difference between potential (designated here as "V INT3 ") cumulative site after amplification during the period of reading in the dark of the status and potential (designated here as "V INT4 ") cumulative site after amplification during the period of reading in that case, when light falls on the level of saturation.

However, as described above, the difference between the V INT3 and V INT4 is more, it can be obtained optical sensor with excellent features, for example, a higher sensitivity and a higher signal-to-noise ratio. Therefore, the object of the present invention is the creation of a display device with highly sensitive optical sensor, due to the greater the difference between the potentials (V INT3-V INT4 ) cumulative site after you gain due to the difference of illumination on light-receiving surface than the difference between its potentials (V INT1 -V INT2 ) at the end of integration period.

To achieve the above objectives revealed here the display device is a device that includes optical sensor in the field of pixels on the substrate active matrix, and this optical sensor includes: focal element for reception of the incident light; the signal line reset signal reset in the optical sensor, the signal line read in the message to be read in the light sensor; cumulative site that has the potential that changes depending on the amount of light obtained one-dimensional element during the period of registration, the registration period is a period of time after alarm reset until the signal is read; reinforcing element for strengthening the capacity of the cumulative site in accordance with the signal of reading; and the item, co sensor, reading capacity, reinforced amplifier element and output of this potential as the output signal of the sensor schematic on the output line, which ensured the presence svetochnaya film on the side opposite to the light-receiving surface relatively photodetector element, and this svetochnaya film connected with a source of power supply for fixing potential svetochnaya film, equal to a constant potential, and satisfied the following formula:

V LS & GE; V RST.H ,

where V LS - constant potential, V RST.H high - level capacity of the reset signal.

In the above configuration, which ensured the presence of the reinforcing element for strengthening the capacity of the cumulative site in accordance with the signal is read, the difference between the potential cumulative site due to the difference between the values of the light on the light-receiving surface after the gain is greater than the difference between its potentials at the end of integration period. For example, the difference between the potential cumulative site after amplification during the period of reading in the dark of the status and potential cumulative site after his gain during the period of reading in that case, when light falls on the level of saturation is greater than the difference between the potential cumulative site at the end of period accumulation in the case of dark status and potential cumulative site at the end of period accumulation in the case when light falls on the level of saturation. Therefore, we can implement the display device, including optical sensor with high sensitivity. In addition, by establishing potential svetochnaya film as a permanent capacity equal to or greater than the high-level potential V RST.H the reset signal can be received at the sensor output, with excellent linearity on the number of incident light.

BRIEF DESCRIPTION OF DRAWINGS

In Fig. 1 shows a block diagram of schematically shows the configuration of the display device according to one of the embodiments of the present invention.

In Fig. 2 shows the equivalent circuit diagram that shows the configuration of one pixel in the display device according to the first variant of the implementation of the present invention.

In Fig. 3 shows wollparadies (CV) characteristics of the capacitor, which is equipped with an optical sensor according to the first variant of the invention.

In Fig. 4 shows the timing diagram, which shows the form of the control signal and the change of potential cumulative node in the optical sensor according to the first variant of the invention.

In Fig. 5 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention.

In Fig. 6 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention.

In Fig. 7 to view it in a larger size shown is an area where a capacitor C1.

In Fig. 8 at the schematic form of the cross section shows the wiring of corresponding fields in optical sensor according to the variant of carrying out the invention.

In Fig. 9 shows the timing diagram of the signal, which shows the change of the potential V INT cumulative site since the end of integration period to period reading.

In Fig. 10A in schematic form in the cross section shows the charge transfer in the capacitor C1, when the electrode potential shutter is lower than the threshold voltage.

In Fig. 10B in schematic form in the cross section shows the charge transfer in the capacitor C1, when the electrode potential shutter is higher than the threshold voltage.

In Fig. 11 at the schematic form of the cross section shows the pin-diode with lateral structure.

In Fig. 12A shows the graph of the characteristics of "dependence from V I d LS ", which shows the differences between the three modes pin diode.

In Fig. 12B shows the graph of the characteristics of "dependence from V I d LS ", which shows the differences between the three modes pin diode.

In Fig. 13 shows the graph that shows the relationship between the potential V A anode and the potential V LS svetochnaya film LS.

In Fig. 14 shows the timing diagram, which shows the time of the reading in the display device according to the first variant of the invention.

In Fig. 15 shows a schematic electrical diagram that shows the internal circuit configuration read pixel, equipped with a sensor.

In Fig. 16 shows the timing diagram of the signal, which shows the relationship between the signal is read, the output signal of the sensor and output signal from the schema read pixel, equipped with a sensor.

In Fig. 17 shows the equivalent circuit diagram of schematically shows the configuration of the amplifier column sensors.

In Fig. 18 shows the equivalent circuit diagram of the optical sensor according to the second variant of the invention.

In Fig. 19 shows the timing diagram of the signal, which shows the reset signal and the signal is read, served in an optical sensor according to the second variant of the invention.

In Fig. 20 in the top view shows as an example the planar structure of the optical sensor according to the second variant of the invention.

In Fig. 21 in the form of a scaled-up shows that the area shown in Fig. 20, where a capacitor C1.

In Fig. 22 at the schematic form of the cross section shows the wiring of corresponding fields in optical sensor according to the second variant of the invention.

In Fig. 32 shows the timing diagram of the signal, which shows the influence that parasitic capacitance and leakage current have on the potential cumulative site.

In Fig. 33 in the top view shows as an example the planar structure is given as an example of a modified version of the optical sensor according to the fourth draft of the invention.

In Fig. 34 in the form of a scaled-up shows that the area shown in Fig. 33, where he formed a p-channel TFT.

In Fig. 35 shows the equivalent circuit diagram of the p-channel TFT, shown in Fig. 33.

In Fig. 36 shows the equivalent circuit diagram of the optical sensor according to the fifth variant of the invention.

In Fig. 37 in the top view shows as an example the planar structure of the optical sensor according to the fifth variant of the invention.

In Fig. 38 for as in enlarged scale shows the area where the formed amplifying element (n-channel TFT) the fifth variant of the invention.

In Fig. 39 in schematic form in the cross section shows the wiring of corresponding fields in optical sensor according to the fifth variant of the invention.

In Fig. 40 shows the equivalent circuit diagram n-channel TFT serving as a reinforcement element in the fifth variant of the invention.

In Fig. 41 in the top view shows as an example the planar structure is given as an example of a modified version of the optical sensor according to the fifth variant of the invention.

In Fig. 42 in schematic form in the cross section shows the diagram of connection of the respective areas in the amplifying element in the above example modified form, shown in Fig. 41.

In Fig. 43 shows the equivalent circuit diagram n-channel TFT, shown in Fig. 42.

In Fig. 44 shows the equivalent circuit diagram of the optical sensor according to the sixth variant of the invention.

In Fig. 45 in the top view shows as an example the planar structure of the optical sensor according to the sixth variant of the invention.

In Fig. 46 on the form in enlarged scale shows the area where the formed amplifying element (diode D2) in the sixth embodiment of the invention.

In Fig. 47 in schematic form in the cross section shows the wiring of corresponding fields in optical sensor according to the sixth variant of the invention.

In Fig. 48 shows the equivalent circuit diagram of the diode, which serves as a reinforcement element, according to the sixth variant of the invention.

In Fig. 49 shows the equivalent circuit diagram of the optical sensor according to the first vidoesseanna option sixth variant of the invention, which is given as an example.

In Fig. 50 in the top view shows as an example the planar structure of the optical sensor according to the first vidoesseanna option sixth variant of the invention, which is given as an example.

In Fig. 51 shows the equivalent circuit diagram of the optical sensor according to the second vidoesseanna option sixth variant of the invention, which is given as an example.

In Fig. 52 in the top view shows as an example the planar structure of the optical sensor according to the second vidoesseanna option sixth variant of the invention, which is given as an example.

In Fig. 53 shows the equivalent circuit diagram of the optical sensor according to the seventh version of the invention.

In Fig. 54 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention.

In Fig. 55A shows a schematic electrical diagram that shows the state of charge injection when connected in series capacitor C SER combined with the configuration in which a gain element is the variable capacitor.

In Fig. 55B shows a schematic electrical diagram that shows the state of charge injection when connected in series capacitor C SER combined with the configuration in which a gain element is a p-channel TFT.

In Fig. 56 shows the equivalent circuit diagram of the optical sensor according to the eighth version of the invention.

In Fig. 57 in the top view shows as an example the planar structure of the optical sensor according to the eighth version of the invention.

In Fig. 58 shows the equivalent circuit diagram of the optical sensor according to the ninth version of the invention.

In Fig. 59 in the top view shows as an example the planar structure of the optical sensor according to the ninth version of the invention.

In Fig. 60 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention.

In Fig. 61 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention.

In Fig. 62 shows the equivalent circuit diagram that shows cited as an example of a typical optical sensor, formed on the substrate active matrix.

In Fig. 63 shows the timing diagram, which shows the form of the control signal and the change of potential cumulative site in conventional optical sensor.

THE IMPLEMENTATION OF THE INVENTION

The display device according to one of the embodiments of the present invention is a the display device, including optical sensor in the field of pixels on the substrate active matrix, in which the optical sensor includes: - dimensional element for reception of the incident light; the signal line reset signal reset in the optical sensor, the signal line read in the message to be read in the light sensor; cumulative site that has the potential that changes depending on the amount of light received a one-dimensional element during the period of registration, the registration period is the period from the submission of a signal reset until the signal is read; reinforcing element for strengthening the capacity of the cumulative site in accordance with the signal of reading; and the item, co sensor, reading capacity, reinforced amplifier element and output of this potential as the output signal from sensor schematic on the output line.

In this configuration, in which ensured the presence of the reinforcing element for strengthening the capacity of the cumulative site in accordance with the signal is read, the difference between the potential cumulative site due to the difference of values of illumination on light-receiving the surface after the gain is greater than the difference between its potentials at the end of integration period. For example, the difference between the potential cumulative site after you gain during the period of reading in the dark of the status and potential cumulative site after you gain during period of reading in that case, when light falls on the level of saturation is greater than the difference between the potential cumulative site at the end of period accumulation in the case of dark status and potential cumulative site at the end of period accumulation in the case, when light falls on the level saturation. It should be noted that this function of strengthening the potential difference established between any values of illumination, and not exclusively for the case of a dark condition and for the case where light falls on the level of saturation. Thus, you can create a display device that includes optical sensor with high sensitivity.

In addition, the above configuration is preferable modified so that available svetochnaya film on the side opposite to the light-receiving the surface relative to the focal element, and this svetochnaya film connected with a source of power supply for fixing potential svetochnaya film is equal to a constant potential, and satisfied the following formula:

V LS & GE; V RST.H ,

where V LS - permanent potential and V RST.H high - level capacity of the reset signal. This is the preferred configuration can be eliminated fluctuations potential svetochnaya film, which is why the deterioration of the characteristics of diode D1 may be impaired.

In the case when the one-dimensional element used the pin diode, even more preferably, met the following formula:

V LS & GE; V RST.H +V th_p ,

where V th_p - threshold voltage p-channel pin diode. This is the preferred configuration may cause the work of the pin diode in the state in which the diode on both edges of the layer own semiconductor (i-layer) from p-layer and from n-layer free electrons and positive holes tend to migrate. Consequently, the photocurrent (PV current increases and the linearity of the changes of the photocurrent (PV current) when changing the light can be improved.

Moreover, in the above display device as a reinforcement element can be used, for example, the p-channel thin-film transistor. In this case, preferably in a p-channel thin film transistor region of the canal was formed in a wide stretch of silicon film connecting the focal item and cumulative node to each other, and that the electrode shutter p-channel thin-film transistor was created so that overrides this wide area. In this configuration, the length of the border can be reduced, preventing the narrow dynamic range due to stray capacitance or leakage current. Alternatively, in the above display device as a reinforcement element can be used n-channel thin-film transistor.

Alternatively, in the above display device as a reinforcement element can be used diode having the electrode shutter on the channel. In this configuration, the length of the border can be reduced.

Also, as another preferred configuration described above the display device might have a configuration in which ensured the presence of the electrode, the opposite svetochnaya film to form sequentially connected capacity relative to parasitic capacitance between svetochnaya film and photodetector element, and this electrode is electrically connected to the signal line reading. This configuration has the effect of reducing the influence of parasitic capacitance between svetochnaya film and photodetector element on the change of potential cumulative site during the integration period.

In addition, in above the display device preferably ensured the presence of many-dimensional elements in the area of pixels, and these many-dimensional elements are connected in parallel, and amplifying element is connected with one of the photoreception items located at the end of a one-dimensional elements. Due to the parallel connection of many-dimensional elements in this way can be increased photoelectric current, which is why the sensitivity can be improved.

In the above display device element, co sensor, preferably is switching element with three conclusions, and the electrode shutter, which is one of these three conclusions, connected with the storage node, and one of the other two conclusions from these three conclusions connected to the output line. In this configuration, it is enough to have one element, co sensor, and, therefore, the circuit optical sensor can be simplified. It should be noted that in the above display device can be additionally provided with the presence of the switching element to reset the element, co sensor.

In the above display device amplifying element preferably has a threshold potential, in which the state reinforcement element switches between "on" ("on") and off ("off") in the interval between the low-potential and high-potential signal reading.

Above the display unit can be implemented as LCD the display device, which additionally includes the opposite substrate, which is the opposite substrate active matrix; and liquid crystal, situated between the substrate active matrix, and the opposite substrate.

The following is an explanation of more specific embodiments of the present invention with reference to the drawings. It should be noted that in the following variants of the invention shown cited as an example configuration in the case when the display device according this invention made as liquid crystal display device, but the device according to the present invention is not limited to a liquid-crystal display device, and the present invention is applicable to any display device that uses the substrate is active matrix. It should be noted that the display device according to the present invention with optical sensors, used as a display device with a touchpad, which detects an object approaching his screen, and performs the operation, in as a display device for two-way communication with the function display and capture function, etc.

In addition, for the convenience explanations of the drawings, linked below, of the constitutive elements included in a variant of the implementation of the present invention, simply shows only the basic elements with the illustrations are necessary to explain the present invention. Consequently, the display device under this variant of the invention may include any items that are not shown on the drawings, to which references in the description of the present invention. In addition, the sizes of the elements shown in drawings that do not accurately reflect the real size of elements, the ratio of the sizes of elements, etc.

[First version of the invention]

First, an explanation is given configuration substrates for active matrix, which is provided in liquid crystal display device according to the first variant of the implementation of the present invention, with reference to Fig. 1 and Fig. 2.

In Fig. 1 shows the block diagram, which is schematically illustrated configuration substrate 100 active matrix, which are equipped with liquid crystal display device according to one of the embodiments of the present invention. As shown in Fig. 1, substrate 100 active matrix includes on its glass substrate, at least, area 1 pixels, driver 2 paddles display device, driver 3 origins of the display device driver 4 columns sensors, driver 5 rows of sensors, buffer amplifier 6 and connector 7 for flexible printed circuit (FPC connector). In addition, with the substrate 100 active matrix through FPC connector 7 and flexible printed circuit Board (FPC) 9 is connected diagram 8 signal processing for signal processing of the image, which photodetector element (described below) 1 pixel.

It should be noted that the above components on the substrate 100 active matrix can be integrally formed on the glass substrate by means of processing technology of semiconductor materials. Alternatively, the configuration can be the following: amplifiers and drivers of the above elements are mounted on a glass substrate, for example, ways COG (installation chip on glass). In addition, in the alternative, at least part of the above items shown on the substrate 100 active matrix in Fig. 1, can be mounted on a flexible printed circuit Board (FPC) 9. Substrate 100 active matrix covered by the opposite substrate (not shown), which has a counter-electrode, formed on its entire surface, forming a multi-layered structure. Liquid crystal substance sealed in the space between the substrate 100 active matrix, and the opposite substrate.

Area 1 pixel represents an area where a lot of pixels to display images. In this embodiment, the invention of optical sensor for registration of images provided in each pixel 1 pixel. In Fig. 2 shows the equivalent circuit diagram that shows the layout of pixels and optical sensors in the area of 1 pixel on the substrate 100 active matrix. In the example shown in Fig. 2, one pixel is composed of three of podpisala R (red), G (green) and B (blue). In one pixel is made up of these three podpisala, provided one of the optical sensor. Area 1 pixel includes pixels, orderly located in a matrix of M rows x N columns, and optical sensors, orderly similarly situated in a matrix of M rows x N columns. It should be noted that the number of podpisala is M X 3N as described above.

Therefore, as shown in Fig. 2, section 1, pixels are lines GL valves and lines COL origins, orderly arranged in a matrix as lines for pixels. Line GL gates connected with driver 2 paddles display device. Line COL sources is connected with the driver from 3 sources of the display device. It should be noted that in region 1 pixel provided with M rows lines GL gates. Below, when it is necessary to describe a specific individual line GL paddles, it is designated as GLi (i= 1 to M). On the other hand, provided three lines COL origins by one pixel to submit data about the image in three podpisala in the pixel, as described above. When it is necessary to describe a specific individual line COL origins, it is designated as COLrj, COLgj or COLbj (j= 1 to N).

In Fig. 2 for podpisala driven thin-film transistor M1r, which is connected with the crossing point one line GLi gates and one line COLrj origins, provided with red color filter that matches this podpisali. In this podpisal serves data about the red color of the driver 3 origins display device through the source COLrj, so that it functions as a red adpixel. In addition, for podpisala driven thin-film transistor M1g, which is connected to the intersection point of the line GLi valves and lines COLgj origins, provided the green color filter that matches this podpisali. In this podpisal serves data about the green image of the driver 3 origins display device through the line COLgj origins, so that it functions as a green adpixel. In addition, for podpisala driven thin-film transistor M1b, which is connected to the intersection point of the line GLi valves and lines COLbj origins, provided blue color filter that matches this podpisali. In this podpisal serves data about the image of blue driver 3 origins display device through the line COLbj origins, so that it functions as blue adpixel.

It should be noted that in the example shown in Fig. 2, provided such optical sensors that one optical sensor corresponds to one pixel (three podpisala) 1 pixel. However, the ratio between pixels and secure optical sensors are not limited by this example, but is arbitrary. For example, can be ensured by the presence of one of the optical sensor on each one podpisal, or can be provided the presence of one of the optical sensor on the set of pixels.

As shown in Fig. 2, optical sensor includes photodiode D1 as a focal element, capacitor C1 (amplifying element) and the transistor M2. The capacitor C1, which in this embodiment, the invention acts as a reinforcement element is the variable capacitor.

In the example shown in Fig. 2, line COLr origins also functions as a line VDD to supply DC voltage VDD on optical sensor driver 4 columns sensors. In addition, the line COLg origins also functions as the line OUT is to output the output signal of the sensor.

With photodiode anode D1 connected RST line to signal reset. One of the electrodes of the capacitor C1 and the transistor gate M2 connected to the cathode of the photo diode D1. Drain transistor M2 connected to the VDD line, and its source is connected to the line OUT. In Fig. 2 connection point (cumulative site), in which (which) are connected to the cathode of the photo diode D1, one of the electrodes of the capacitor C1 and the transistor gate M2, designated as "INT". The other electrode capacitor C1 is connected to the line RWS to signal reading. The RST line and line RWS is connected with the driver 5 rows of sensors. The presence of these lines RST and RWS provided for each row. Therefore, below, when you need to distinguish between these lines, they are marked as RSTi and RWSi (i= 1 to M).

The driver 5 rows of sensors selects line RSTi and RWSi in combination, are shown in Fig. 2, consistently intervals t row time. Thus, the line of optical sensors, which need to read the information charges, choose consistently in the area of 1 pixel.

It should be noted that, as shown in Fig. 2, the drain of the FET M3 insulated gate is connected to the end of the line OUT. To drain transistor M3 connected output line SOUT. Therefore, the potential V SOUT drain transistor M3 output as output signal from the optical sensor in the driver 4 columns sensors. The source of the transistor M3 connected to the line VSS. The transistor gate M3 connected to the voltage reference (not shown) through the line VB reference voltage.

In Fig. chart 3 shows voltarei (CV) characteristics of the capacitor C1. In Fig. 3 on the horizontal axis shows the voltage, V CAP between the electrodes of the capacitor C1, and the vertical axis shows the electrostatic capacity. As shown in Fig. 3, capacitor C1 is notable electrostatic capacity, which is constant when the voltage V CAP between the electrodes little, but abruptly changed immediately before and after voltage V CAP between the electrodes reaches a threshold. Therefore, the characteristics of the capacitor C1 can dynamically change when the potential signal-reading, served with lines RWS. Using capacitor C1 having such characteristics allow optical sensor according to the variant of carrying out the invention to read the increased value changes of potential cumulative node period T INT integration, as shown in Fig. 4. The example shown in Fig. 4, is simply one of the variants of the invention, in which a low level V RST.L the reset signal is equal to 1.4 In, and the high level V RST.H the reset signal is 0 Century Low level V RWS.L signal reading equal to -3 In, and the high level V RWS.H signal reading is 12 C. in addition, Fig. 4 signal form, denoted by the solid line represents the change of potential INT V in the case when the amount of light falling on the photo diode D1, a little, and the shape of the signal is indicated by a dashed line represents the change of potential INT V in the case, when the photodiode D1 light falls on the level of saturation. ΔV SIG is a potential difference is proportional to the amount of light falling on the photo diode D1. From the comparison between conventional the example shown in Fig. 63, and the configuration shown in Fig. 4, it is clear that in the optical sensor according to the variant of the invention, the change of potential cumulative site during the integration period T INT in the case, when light falls on the level of saturation is smaller than in conventional optical sensor. However optical sensor according to the variant of the invention, increases the potential cumulative site and read it for a period of reading (the period when the potential signal of reading has a high level V RWS.H ).

Here reading the output signal of the sensor from the area of 1 pixel explained with reference to Fig. 4. First, when the reset signal supplied from the driver 5 rows of sensors on line RST, increases from a low level (V RST.L ) to a high level (V RST.H ), photodiode D1 is directly offset. As a result, the potential V INT point INT connection has a value, which is expressed by the following formula (4):

V INT =V RST.H-V F , (4)

where V F is the forward voltage of the photo diode D1. Because here INT V is lower than the threshold voltage of the transistor M2, the transistor M2 is non-conductive during reset.

Then, when the reset signal is returned to a low level V RST.L , the period of integration of photovoltaic power (INT T ). In the period T INT integration of photovoltaic current is proportional to the amount of light falling on photodiode D1, flows into the capacitor C1, which is why the capacitor C1 is discharged. This leads to the fact that the potential V INT point INT connection at the end of period T INT integration has a value, which is expressed by the following formula (5):

V INT =V RST.H-V F -∆V RST ·C PD /C TOTAL-PHOTO I ·t INT /C TOTAL (5)

where ΔV RST - height pulse the reset signal (V RST.H - V RST.L ); I PHOTO - photoelectric current of the photodiode D1; INT t - the duration of the integration period; C PD - capacity photodiode D1; and C TOTAL capacity of the entire optical system as a whole, that is, the total capacity point INT connection, equal to the amount of capacity C INT capacitor C1, capacitance C PD PD D1 and capacity C TFT transistor M2. Besides, during the integration period also because INT V is lower than the threshold voltage of the transistor M2, the transistor M2 is non-conductive.

After the end of integration period of the signal level reading served on line RWS, rises and begins the period of reading. When this happens injection of electrical charges in the capacitor C1. When the potential V INT point INT connection becomes higher than the threshold voltage of the transistor M2, the transistor M2, becomes conductive. Consequently, the transistor M2 with transistor M3 displacement, which are provided at the end of the line OUT in each column, functions as the amplifier istokova the repeater. In the optical sensor according to the variant of the invention, the voltage output from the line output SOUT with drain transistor M3 is equivalent to the value obtained by strengthening the integral PV photodiode current D1 during the integration period. Description of the principles of this below.

As described above, this variant of the invention, the initialization reset pulse, the integration of photovoltaic power during the period of integration and reading the output signal of the sensor during the period of reading, which, as suppose, are one cycle, perform a loop.

Due to the fixation potential svetochnaya film LS equal to a constant potential V LS can be improved reliability of the photodiode. In the case when the potential svetochnaya film LS is floating, possible deviations of potential svetochnaya film LS from the original values due to the transfer of charge carriers or injection, which may change and degradation of the diode D1. However, this problem can be solved by fixing the potential svetochnaya film LS equal to a constant potential V LS .

In addition, can be reduced to differences in characteristics between diodes D1. This is because if the potential svetochnaya film LS is floating, it svetochnaya film LS can have different floating potentials due to uneven charging plasma ions, etc. in the process. In contrast, this task can be solved by fixing the potential svetochnaya film LS equal to a constant potential V LS .

In addition, can be reduced mutual noises of different signals for display devices. This is because: because svetochnaya film LS has a capacitive touch with lines COL origins, electrodes pixels, and so on, then in the case when the potential svetochnaya film LS is floating on the potential svetochnaya film LS affected by fluctuations of the potential of different signals to a display device (potentials lines origins, the potentials of electrodes pixels, and so on). Such fluctuations potential svetochnaya film LS additionally add noise to the optical sensor. In contrast, due to the fixation potential svetochnaya film LS equal to a constant potential V LS can be eliminated fluctuations potential svetochnaya film LS, whereby can be solved the above problem.

It should be noted that it is preferable satisfies the following relation:

V LS & GE; V RST.H ,

where V LS - constant potential svetochnaya film LS, and V RST.H high - level capacity of the reset signal. In addition, more preferably satisfies the following relation:

V LS & GE; V RST.H +V th_p ,

where V th_p - threshold voltage p-channel diode D1. The reason for this is described in detail below.

As shown in Fig. 6, optical sensor according to the variant of the invention, includes the transistor M2 in the area between the lines COLg and COLb origins. Diode D1 is a pin-diode with lateral structure, in which silicon film that serves as the basis, consistently formed the following areas: the area of the semiconductor of p-type 102p, area 102i own semiconductor and region 102n of n-type semiconductor. Region 102p semiconductor of p-type function as photodiode anode D1 and connected with the RST line through the line 108 and contacts 109 and 110. Region 102n semiconductor of n-type acts as a cathode photodiode D1 and connected to the electrode 101 of the transistor M2 through extended section 107 of silicon film, contacts 105 and 106, and line 104.

In this configuration line RST and RWS formed from the same metal as the metal electrode 101 of the transistor M2, and on the same layer in the same way that the layer and the method applied to the electrode 101 shutter. In addition, line 104 and 108 formed from the same metal as the metal line COL origins, and on the same layer in the same way that the layer and the method used to line COL origins. On the back of the photo diode D1 provided with a metallic film 113, which functions as svetochnaya film LS (see Fig. 5). As described above, the potential of the metal film 113 serving as svetochnaya film, recorded equal to a constant potential V LS . Consequently, metal film 113 connected to the line 114. Line 114 connected to a power source with constant voltage (not shown), which is located outside the area of 1 pixel. It should be noted that shown in Fig. 6 configuration, which ensured the presence line 114 for submission of constant potential V LS on the metal film 113, functioning as svetochnaya film LS, in parallel with the vent line RST listed as an example, but the configuration is relatively line 114 is not restricted to this specific example.

In addition, as shown in Fig. 6 in Fig. 8, capacitor C1 is formed by a wide section 111, formed in line RWS, extended section 107 of silicon film and insulating film (not shown)provided between a wide section 111 and extended section 107. In other words, a wide section 111, which has the same potential as the capacity of the line RWS, functions as the electrode shutter capacitor C1. The area 112 shown in Fig. 7, is an area p+, formed by alloying silicon film n-type impurity p-type, for example, boron. It should be noted that when the doping impurity p-type, a wide section 111 works as a mask. Therefore, as shown in Fig. 8, extended section 107 becomes field of p + and plot silicon film below wide section 111 forms region n .

A read operation from the optical sensor according to the variant of carrying out the invention is explained here below. In Fig. 9 shows the timing diagram of the signal, which shows the change of the potential V INT cumulative site since the end of integration period to period reading. In Fig. 9, the form w1 signal is indicated by a solid line shows the trend of the potential V INT in the case when the amount of light falling on the photo diode D1, little. Signal form w2 dotted line shows the trend of the potential V INT in the case, when light falls on the photo diode D1. The time t 0 is a point in time at which the signal level is read, served with lines RWS, begins to rise from a low level V RWS.L . The time t 2 is a point in time at which the signal level reading comes to high level V RWS.H . The time t S represents the point in time at which included transistor M2 and is the selection of the output signal of the sensor. The time t 1 represents the point in time at which the signal is read reaches the threshold voltage V off capacitor C1. In other words, capacitor, C1 has operational characteristics which vary according to the proportion between the potential that is available from signal line RWS reading on a wide section 111, and the threshold voltage V off .

In Fig. 10A and Fig. 10B schematic diagram in the context, showing the difference in the charge transfer in consequence of the electrode potential button (wide area 111) in capacitor C1. As shown in Fig. 9, Fig. 10A and Fig. 10B, up to the moment of time t 1 capacitor C1 is always enabled (ON), and after a moment of time t 1 capacitor C1 is in the off state (OFF). In other words, when the capacity of the line RWS is equal to the threshold voltage V off or lower, the charge transfer Q inj under the electrode button (wide area 111,) as shown in Fig. 10A. However, when the capacity of the line RWS exceeds the threshold voltage V off , the charge transfer Q inj under the electrode button (wide area 111) does not occur, as shown in Fig. 10B. As described above, the potential INT V (t S ) cumulative node at time t S sampling after a potential signal of reading, filed with the signal line RWS reading, reaches a high level V RWS.H , is expressed by the formula (6), below. It should be noted that the difference ΔV INT , shown in Fig. 4, equivalent to the difference between INT V (t 0 ) and V INT (t, S ), which is equal to Q inj /C INT .

[Mathematical formula 1]

As shown in Fig. 9, in an optical sensor according to the variant of the invention, the potential difference cumulative site, due to the difference of light on the surface of the light-receiving after the gain is greater than its potential difference at the end of integration period. For example, the difference between the potential cumulative site after you gain during the period of reading in the dark of the status and potential cumulative site after you gain during the period of reading in that case, when light falls on the level of saturation is higher than the difference between the potential cumulative site at the end of period accumulation in the case of dark status and potential cumulative site at the end of the period accumulation in the case, when light falls on the level of saturation. Consequently, it can be implemented optical sensor with high sensitivity and high signal-to-noise ratio.

This is an explanation of the advantages of the optical sensor according to the variant of carrying out the invention with reference to Fig. 11 - Fig. 13. As described above, optical sensor according to the variant of the invention, includes svetochnaya film LS (see Fig. 5) to prevent the incidence of light from the backlight on the surface of the photo diode D1 on the side opposite to the light-receiving surface, and the potential svetochnaya film recorded equal to a constant potential V LS . Constant potential V LS satisfies the following relation to high-level potential V RST.H signal and reset threshold voltage V th_p p-channel diode D1:

V LS & GE; V RST.H +V th_p .

By establishing constant potential V LS svetochnaya film LS, thus, can be improved linearity of the photo diode D1 in the range of low light conditions. Explanation of the principles of this below.

In Fig. 12A and Fig. 12B depicted graphic characteristics of "dependence from V I d LS ", which shows the differences between three of the above modes. It should be noted that I d represents the photocurrent diode. It should be noted that the photocurrent is a current, generated by the fall of light on the diode in accordance with the amount of incident light, and it is also called the photocurrent. In Fig. 12A shows the graph that shows the relationship between the potential V LS svetochnaya film LS and photocurrent I d in the case when the potential V A anode equal to -7 In, and the potential V C cathode 0 Century In the example shown in Fig. 12A, the behavior of the photocurrent I d depending on the potential V LS svetochnaya film LS changes near the point V LS =V C +V th_p as a point of differentiation. Here the mode of operation in the interval V LS ≤V A +V th_p called "regime B", and the mode of operation in the interval V LS & GE V A +V th_p called "A regime".

In addition, Fig. 12B shows the graph that shows the relationship between the potential V LS svetochnaya film LS and photocurrent I d in the case when the potential V A anode equal to -7 In, and the potential V C cathode is -3 C. In the example shown in Fig. 12B, the behavior of the photocurrent I d at depending on the potential V LS svetochnaya film LS changes near the point V LS =V +V th_p as a point of differentiation, as well as the behavior of the photocurrent I d depending on the potential V LS svetochnaya film LS changes near the point V LS =V C +V th_n as a point of differentiation. Here the mode of operation in the interval V LS ≤V A +V th_p called "regime B"mode in the interval V A +V th_p ≤V LS ≤V C +V th_n called "regime A"mode in the range V C +V th_n ≤V LS called "regime C".

From Fig. 12A and Fig. 12B clear that in mode A, can be received consistently high value of the photocurrent I d , and linearity of the photocurrent relatively light is excellent. Therefore, in this embodiment, the invention diode D1 preferably working in the regime of A. In particular, if V (A +V th_p ≤V LS ≤V C +V th_n (mode A) assume both boundaries of the i-layer diode from p-layer and from n-layer are in the state in which the free electrons and positive holes tend to migrate. Therefore, in mode A photoelectric current tends to flow freely through the diode, and there is a tendency to reduce the dark current. Consequently received an excellent signal-to-noise ratio and superior linearity of the photocurrent is relatively light.

On the other hand, if V LS ≤V A +V th_p (B) assume that the boundary i-layer diode from n-layer is in the state in which the free electrons and positive holes tend to migration, while at the border i-layer diode from p-layer i, layer prevents the flow of electric current. Unlike from this, in the case of V C +V th_n ≤V LS (C) assume that the boundary i-layer diode from p-layer is in the state in which the free electrons and positive holes tend to migrate, while on its border from n-layer the i-layer prevents the flow of electric current. Therefore, in cases regimes B and C photovoltaic no current can flow through the diode, and there is a tendency of increase of the dark current. Consequently, an excellent signal-to-noise ratio can not be obtained.

Here the distribution of modes A, B and C can be represented as the ratio between potential V A anode and the potential V LS svetochnaya film LS, which is shown in Fig. 13. In Fig. 13 where there's no shading region of mode A, area, shaded lines right down diagonally, is area B, and area, shaded lines left down diagonally, is an area mode C. As described above, the scope of mode A can be expressed as follows:

V A +V th_p ≤V LS ≤V C +V th_n .

Area B can be expressed as follows:

V LS ≤V A +V th_p .

The scope of mode C can be expressed as follows:

V C +V th_n ≤V LS .

Among the points T1, T2 and T3, is shown in Fig. 13, T1 is a coordinate point, displaying V V A LS and at the moment in time at which the signal level is reset, shown in Fig. 4, rises to a high level. Point T2 corresponds to the moment of time t RST , shown in Fig. 4 (that is, the time when the signal level is reset switch with a high level to a low level), and the point T3 corresponds to the moment of time t RWS , shown in Fig. 4 (i.e. the time when the signal level is reset switch from low to high level).

Here the triangle formed by lines, continuing between the points T1 and T2, T2 and T3 and T3 and T1, preferably located within the area of the regime A. Consequently, preferably satisfies the following condition as a necessary condition that must be satisfied in order for the value V LS T1 was not within the scope of state B, and were within the area of A mode:

V LS & GE V A +V th_p.

It should be noted that the potential V A of the anode in the early discharge is equal to the high-level potential V RST.H the reset signal, and therefore, the above formula can be expressed as follows:

V LS & GE; V RST.H +V th_p .

Because in this embodiment, the invention, the capacitor C1 used the variable capacitor, the fluctuations of the potential V C cathode during the period of accumulation weakened compared with the case, which uses conventional capacitor (not which is a variable capacitor). Consequently, V LS is increasing considerably during the accumulation period (from the point T2 to the point of T3 in Fig. 13), which allows for work in the mode area A.

To make the diode D1 not work in the mode area C at the point T3, it is desirable that the coefficient A AC gain of the capacitor C1 satisfied value, represented by the following expression:

A AC & GE; VDD/(V th_n-V th_p ),

where VDD - supply voltage output transistor M2. If this ratio, it is possible to achieve compliance with the range of change of the potential V INT cumulative site, expressed as ΔV th =V th_n - V th_p , the output voltage range of 0 V to VDD.

As described above, by setting the values of the potential V LS svetochnaya the film is equal to a constant potential, which should be satisfied with the condition V LS & GE; V RST.H +V th_p you can achieve a work of photo diode D1 in mode A, since reset until at least the initial stages of the accumulation period. If the diode works in mode B is close to the beginning of the reset, notably the deterioration of linearity, particularly in the field of low light that shown in Fig. 12A and Fig. 12B. However, as explained here, due to the fact that to achieve diode in mode A, after the start of the reset, the value of output sensor signal with high signal-to-noise ratio and excellent linearity when changing the light can also be obtained even in the period after the start of discharge during the initial phase of the accumulation period.

Although in most preferable variant potential svetochnaya film LS is equal to a constant potential V LS , which satisfies the condition V LS & GE; V RST.H +V th_p , can be achieved with improved characteristics of diode D1, even if constant potential V LS has a value that satisfy the condition V LS & GE; V RST.H . In addition, even if constant potential VLS has a value that does not meet the condition V LS & GE; V RST.H , can be achieved with improved characteristics of diode D1, compared to the case when the potential svetochnaya film LS is floating.

Because in this embodiment, inventions line COLr, COLg and COLb origins also serve as, respectively lines VDD, OUT and VSS, for the above optical sensor is necessary to distinguish those moments in time when the signal data about the image to the display device is inserted through the line COLr, COLg and COLb origins, with the point in time when reads the output signals from the sensors that are shown in Fig. 14. In the example shown in Fig. 14, the output signal of the sensor is read using the period horizontal blanking after entering the data about the image to display during the horizontal scan.

As shown in Fig. 1, the driver 4 columns sensors include 41 reading pixels, equipped with sensors, power 42 columns sensors and schema 43 scanning columns sensors. With the scheme 41 reading pixels, equipped with sensors, connected line SOUT (see Fig. 2) to output output signal V SOUT sensor from the area of 1 pixel. In Fig. 1 the sensor output from the line SOUTj (j= 1 to N) denoted as V SOUTj . Diagram 41 reading pixels, equipped with sensors, displays the registered peak voltage V Sj output signal V SOUTj sensor to power 42 columns sensors. Power 42 columns of sensors includes N amplifiers columns, which correspond respectively N columns of optical sensors in the area of 1 pixel. Power 42 columns sensors increases registered peak voltage V Sj (j= 1 to N) amplifier for each column, which makes its output as V COUT into the buffer amplifier 6. Diagram 43 scanning columns sensors displays the signal CSj (j= 1 to N) column selection in power 42 columns sensors for consecutive connection of amplifiers columns of the amplifier 42 columns sensors to output buffer amplifier 6.

Here below is explained functioning driver 4 columns sensors and buffer amplifier 6 after reading the output signal V SOUT sensor from area 1 pixel with reference to Fig. 15 and Fig. 16. In Fig. 15 shows a schematic electrical diagram illustrates the internal circuit configuration 41 reading pixels, equipped with sensors. In Fig. 16 shows the timing diagram of the signal, which shows the relationship between the signal V RWS read the output signal V SOUT sensor and output signal V S from the schema read pixels, equipped with sensors. As described above, when the signal level of reading increased to a high level V RWS.H , the transistor M2 becomes conductive, which is why transistors M2 and M3 form amplifier istokova the repeater. It allows you to store the output signal V SOUT sensor in C condenser SAM for samples that are part of a scheme 41 reading pixels, equipped with sensors. Therefore, as shown in Fig. 16, after the level signal reading drops to a low level V RWS.L , the output voltage V S from the diagram 41 reading pixels, equipped with sensors supplied to the amplifier 42 columns sensor remains at a level equal to the maximum value of the output signal V SOUT sensor for some period (t row ) during the selection of the appropriate line.

The following is an explanation of the functioning of the amplifier 42 columns sensors with reference to Fig. 17. As shown in Fig. 17, the corresponding output voltage V Sj (j= 1 to N) column type of scheme 41 reading pixels, equipped with sensors, N amplifiers columns that are included with the amplifier 42 columns sensors. As shown in Fig. 17, each amplifier column made up of transistors M6 and M7. Signals from C Sj column selection generated by the scheme 43 scanning columns sensors, be consistently included ON relatively accordingly N columns during the selection period (trow) for one rows in the result of which is included transistor M6 appropriate one N amplifiers columns in the amplifier 42 columns sensors. Then take the only appropriate one output voltages V Sj (j= 1 to N) columns through appropriate transistor M6 as the output signal V COUT amplifier 42 columns sensors. The buffer amplifier 6 enhances the signal V COUT , derived from the amplifier 42 columns sensors, and displays it as the output signal V OUT panel (signal sensor) in the scheme of 8 signal processing.

It should be noted that the scheme 43 scanning columns sensors can scan columns optical sensor, one after the other, as described above, but the configuration is not limited by this option. Diagram 43 scanning columns sensors can be configured to perform interlaced scanning the columns of optical sensors. Alternatively scheme 43 scanning columns sensors can be formed scanning scheme multiphase addressing, for example, four of addressing.

In the above configuration, the display device under this variant of the invention receives the output signal V OUT panel in accordance with the amount of light that is received by a photo diode D1, formed in each pixel 1 pixel. Output signal V OUT panel passed in diagram 8 signal processing, put it analog-to-digital conversion and store in memory (not shown) as the data derived from the panel. This means that the storage device accumulate the same amount of data sets derived from the panel, as the number of pixels (number of optical sensors) 1 pixel. Diagram 8 signal processing performs processing of signals of various types, such as image capture and detection area had touched, using data drawn from panel, which is accumulated in the storage device. Note that this version the invention in the storage schema 8 signal processing accumulate the same amount of data sets derived from the panel, as the number of pixels (number of optical sensors) 1 pixel, but, with restrictions, such as, for example, storage capacity devices, the amount accumulated in it datasets derived from the panel, is not necessarily the same as the number of pixels.

In Fig. 18 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention. In Fig. 19 shows the timing diagram of the signal, which shows the reset signal and the signal is read, served in an optical sensor according to the variant of carrying out the invention. In Fig. 20 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention. In Fig. 21 on the form in enlarged scale depicted is an area where a capacitor C1. In Fig. 22 at the schematic form of the cross section shows the wiring of corresponding fields in optical sensor according to the variant of carrying out the invention.

As shown in Fig. 18, optical sensor according to the variant of carrying out the invention differs from the optical sensor of the first variant of the invention, the fact that the capacitor C1 is n-channel MOS capacitor. In addition, the diode D1 connected in the opposite direction compared to the first variant of the invention. In particular, the cathode diode D1 connected to the RST line, and the anode is connected with the storage node, INT. Moreover, the transistor M2 to read is a p-channel TFT. In addition, as shown in Fig. 19, suggest that high levels and low levels of potentials of the reset signal and signal reading are backward in comparison with the first variant of the invention.

As shown in Fig. 20, diode D1 is a pin-diode with lateral structure where on silicon film that serves as the basis, consistently formed the region 102p semiconductor of p-type, area 102i own semiconductor and region 102n semiconductor of n-type, as in the first variant of the invention. However region 102n of n-type semiconductor (cathode) are connected with the RST line through the line 108 and contacts 109 and 110. Region 102p semiconductor of p-type (anode) is connected to the electrode 101 of the transistor M2 through extended section 107 of silicon film, contacts 105 and 106 and line 104.

As shown in Fig. 21 and Fig. 22, the capacitor C1 is formed by a wide section 111, formed in line RWS, extended section 107 of silicon film and insulating film (not shown)provided between a wide section 111 and extended section 107. In other words, a wide section 111, which has the same potential as the line RWS, functions as the electrode shutter capacitor C1. In this embodiment, the invention of the region 112 shown in Fig. 21, is an area n+, formed by alloying silicon film n-type impurity n-type, such as phosphorus. When the doping impurity n-type, a wide section 111 works as a mask. Therefore, as shown in Fig. 22, extended section 107 becomes field n+, and the part of the silicon film under a wide section 111 forms region n.

In the optical sensor of this variant of the invention, with the above configuration, the ratio between potential is backward compared with the first option for practicing the invention. Consequently, the change of potential cumulative host INT during the integration period and period reader assumes the existence of the state, obtained by contacting the status shown in Fig. 9 vertically in conjunction with a description of the first variant of the invention. Therefore, in the optical sensor of this variant of the invention, the potential difference cumulative site by differences in light light-receiving surface after the gain is greater than the difference in the end of integration period. For example, the difference between potential cumulative site after you gain during the period of reading in the dark of the status and potential cumulative site after you gain during the period of reading in that case, when light falls on the level of saturation is greater than the difference between the potential cumulative the node at the end of period accumulation in the case of dark status and potential cumulative site at the end of period accumulation in the case, when light falls on the level of saturation. The result can be implemented optical sensor with high sensitivity and high signal-to-noise ratio.

In addition to the this, by the optical sensor of this variant of the invention can also be obtained from the output signal sensor with excellent linearity when changing the light, as in the first variant of the invention, due to the fixation potential svetochnaya film LS diode D1 to a constant potential V LS and by establishing the value of constant potential V LS that meets the following condition:

V LS & GE; V RST.H

or preferably

V LS & GE; V RST.H +V th_p .

[The third variant of the invention]

In Fig. 23 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention. In Fig. 24 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention. In Fig. 25 on the form in enlarged scale shows the area that formed the capacitor C1. In Fig. 26 at the schematic form of the cross section shows the wiring of corresponding fields in optical sensor according to the variant of carrying out the invention.

As shown in Fig. 23, equivalent electrical circuit of the optical sensor according to the variant of carrying out the invention is identical to the equivalent circuit diagram of the optical sensor of the first variant of the invention. However, the configuration of the capacitor 1, etc. shown in Fig. 24 - Fig. 26, is different.

As shown in Fig. 24, in the optical sensor according to the variant of the invention, the line from electrode 101 of the transistor M2 continue over the area 102n of n-type semiconductor diode D1 and connected with the region 102n of n-type semiconductor, through contacts 115 and 116. Line from electrode 101 of the transistor M2 also continued to upper layer capacitor C1 and functions as the electrode 121 shutter capacitor C1.

As shown in Fig. 25 and Fig. 26, capacitor C1 formed through electrode 121 gate silicon film 117 and insulating film (not shown) between the electrode 121 shutter and silicon film 117. Electrode 121 shutter has the same potential (INT V )that the potential cumulative host INT. In this embodiment, the invention of the region 112 shown in Fig. 25, is an area n+, formed by alloying silicon film n-type impurity n-type, such as phosphorus. When the doping impurity n-type, the electrode 121 shutter operates as a mask. Therefore, as shown in Fig. 26, section silicon film under the electrode 121 shutter forms a region of n-type.

The optical sensor of this variant of the invention managed by the reset signal and signal readout that shown in Fig. 4 in conjunction with a description of the first variant of the invention, and the change of potential cumulative host INT during the integration period and the period of reading is shown on Fig. 9 in conjunction with a description of the first version carry out the invention. Therefore, in the optical sensor of this variant of the invention, the potential difference cumulative site by differences in light light-receiving surface after the gain is greater than the difference in the end of integration period. For example, the difference between the potential cumulative site after you gain during the period of reading in the dark of the status and potential cumulative site after you gain during the period of reading in that case, when light falls on the level of saturation is greater than the difference between potential cumulative site at the end of period accumulation in the case of dark status and potential cumulative site at the end of period accumulation in the case, when light falls on the level of saturation. The result can be implemented optical sensor with high sensitivity and high signal-to-noise ratio.

In addition, through the optical sensor of this variant of the invention can also be obtained from the output signal sensor with excellent linearity when changing the light, as in the first variant of the invention, due to the fixation potential svetochnaya film LS diode D1 to a constant potential V LS and by establishing the value of constant potential V LS that meets the following condition:

V LS & GE; V RST.H

or preferably

V LS & GE; V RST.H +V th_p .

[Fourth variant of the invention]

Below is the explanation of the fourth version of the implementation of the present invention. Elements that have the same functions as the elements of the above explained the embodiments of the invention, marked with the same numbers positions and the corresponding items in the above variants of the invention, and their detailed explanations omitted.

In Fig. 27 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention. In Fig. 28 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention. In Fig. 29 on the form in enlarged scale shows the area where the formed amplifying element (p-channel TFT). In Fig. 30 at the schematic form of the cross section shows the wiring of corresponding fields in optical sensor according to the variant of carrying out the invention. In Fig. 31 shows the equivalent circuit diagram of the p-channel TFT optical sensor, which serves as a reinforcement element.

In the optical sensor according to this variant of the invention, which is shown in Fig. 27 - Fig. 31, as a reinforcement element used p-channel TFT (transistor M4) instead of the capacitor C1 variable capacity, used in the above options the invention, the one through three. It should be noted that the control signals and operation of the optical sensor of this variant of the invention, which as a reinforcement element used transistor M4, are identical control signals and functioning in the first variant of the invention, explained above with reference to Fig. 4 - Fig. 9. Therefore, if the optical sensor according to the variant of the invention, the potential V INT cumulative site can also be read as a gain.

In addition to the also, as shown in Fig. 28 and Fig. 29, optical sensor according to the variant of carrying out the invention differs from the first variant of the invention, the fact that a wide section 111 line RWS continue to such a location that is completely crosses the line 107 in the direction of the width. In this configuration, an optical sensor according to the variant of carrying out the invention has an advantage consisting in the presence of a shorter length of the border than the length of the border in the optical sensor according to the first variant of the invention.

The following is an explanation of the term "border length". Border length is the length of the border between amplification item and cumulative INT node. For example, in the first variant of the invention, shown in Fig. 6 and Fig. 7, capacitor C1 is formed by means of the site where the extended section 107 of silicon film and a wide section 111 line RWS superimposed on each other. Therefore, in the first variant of the invention, shown in Fig. 7, the boundary line between a gain item and cumulative INT node is the area where the outer edge of a wide section 111 line RWS covers the extended section 107 of silicon film, which is indicated with a bold line B. In other words, in the first variant of the invention, the border length is equal to the sum of length L (CAP) and 2 x W CAP , as shown in Fig. 7. Since, as shown in Fig. 29, in the optical sensor according to the variant of the invention, the site where a wide section 111 line overlaps RWS extended section 107 of silicon film acts as a reinforcement element, border length is equal to twice the width W TFT this amplification of the element (that is, the width of the extended section 107).

In the first variant of the invention, in order to reduce the length of the border, it is necessary to reduce the length L of the CAP , as if the capacitor C1 increases, the size of the placement of the capacitor C1 stops increasing. However, in the fourth variant of the invention, the border length equal to width W TFT extended section 107 of silicon film. Therefore, border length can be reduced without increasing space.

The reason why the shorter length of the border is preferred explained below with reference to Fig. 9 and Fig. 32. As explained in the description of the first variant of the invention with reference to Fig. 9, threshold voltage V is off voltage certain level, through which the signal level is read, filed with the line RWS, increases from low-potential V RWS.L to high potential V RWS.H . Thus, after the signal to be read line RWS reaches the threshold voltage V off at the moment of time t 1 , the potential V INT cumulative site preferably is constant up to the moment of time t S sampling. However, as shown in Fig. 32, during the period from the moment of time t 1 until time t 2 , while increases the level of the signal is read, the potential V INT cumulative node continuously increases due to parasitic capacitance between the amplifier element and cumulative site. Also during the period from the moment of time t 2 when the potential signal-reading reaches the top level of the potential V RWS.H , up to the moment of time t S sampling potential V INT cumulative node continuously increases due to the leakage current. Thus, the increase of the potential V INT cumulative site after time t 1 is not preferred because of the effect of strengthening the capacity is weakened. To mitigate the increase of the potential V INT result of parasitic capacitance and leakage current after time t 1 border length amplifier element preferably is short.

Consequently, optical sensor according to the fourth variant of the invention, which has a more the short length of the border reinforcement element that can weaken the capacity building V INT result of parasitic capacitance and leakage current after time t 1 . Thus, the optical sensor according to the variant of carrying out the invention is preferred over optical the sensor according to the first variant of the invention.

In addition, as a modified version of the optical sensor according to the fourth variant of the invention, which is given as an example may be provided, the configuration in which amplifying element has sufficient usable area, and length W TFT borders reduced even more due to the narrowing of the extended section 107 of silicon film width and through the creation of a wide section 107a in the extended section 107 for amplifying element had sufficient width W CAP , as shown in Fig. 33 and Fig. 34. In this case, the equivalent electrical circuit of p-channel TFT serving as a reinforcement element shown in Fig. 35. According configuration this modified version, shown as an example, the length of the border can be reduced even more in comparison with the configuration shown in Fig. 27 - Fig. 31. Therefore, capacity building of V INT result of parasitic capacitance and leakage current after time t 1 may be weakened even more. Consequently, it can be implemented optical sensor for higher dynamic range.

In addition, by optical sensor of this variant of the invention can also be obtained from the output signal sensor with excellent linearity when changing the light, as in the first variant of the invention, due to the fixation potential svetochnaya film LS diode D1 to a constant potential V LS and by establishing the value of constant potential V LS that meets the following condition:

V LS & GE; V RST.H

or preferably

V LS & GE; V RST.H +V th_p .

[The fifth variant of the invention]

The following is an explanation of the fifth variant of the implementation of this inventions. Elements that have the same functions as the elements of the above explained the embodiments of the invention, marked with the same numbers positions and the corresponding items in the above variants of the invention, and their detailed explanations omitted.

In Fig. 36 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention. In Fig. 37 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention. In Fig. 38 for as in enlarged scale shows the area where the formed amplifying element (n-channel TFT). In Fig. 39 in schematic form in the cross section shows the wiring of corresponding fields in optical sensor according to the variant of carrying out the invention. In Fig. 40 shows the equivalent circuit diagram n-channel TFT serving as a reinforcement element.

In the optical sensor of this variant of the invention as a reinforcement element used n-channel TFT (transistor M4) instead of the n-channel MOS-condenser of the second variant of the invention, the explanation given above. It is expected that the high level capacity and low capacity control signals for optical sensor of this variant of the invention, which as a reinforcement element used n-channel TFT, are backward in comparison with the control signals from the fourth version of the implementation the invention, which as a reinforcement element used n-channel TFT, as set out in the description of the second variant of the invention with reference to Fig. 19. Given these control signals of the optical sensor of this variant of the invention is different in that the potential V INT cumulative site can be read in a state with strengthening, as explained above in the description of the first variant of the invention with reference to Fig. 19.

As shown in Fig. 36 and Fig. 37, in the optical sensor according to the variant of the invention, the diode D1 connected in the opposite direction compared to the fourth variant of the invention. In particular, the cathode diode D1 connected to the RST line, and the anode is connected to the n-channel TFT. In addition, the transistor M2 to read is a p-channel TFT.

As shown in Fig. 37 and Fig. 38, optical sensor according to the variant of carrying out the invention differs from the second variant of the invention, the fact that a wide section 111 line RWS continue to such a location that is completely crosses the line 107 towards width. Optical sensor according to the variant of carrying out the invention has an advantage consisting in the presence of a shorter length of the border than the length of the border in the optical sensor according to the second variant of the invention, which is explained in the description of the fourth version of the implementation inventions when compared with the first variant of the invention. In particular, as shown in Fig. 21, border length of the optical sensor according to the second variant of the invention equal CAP L +2 x W CAP . On the other hand, as shown in Fig. 38, border length of the optical sensor under this variant of the invention equal to width W TFT extended section 107.

In the second variant of the invention to reduce the length of the border it is necessary to reduce the length L of the CAP , if provided with the capacitor C1, the size of the placement of the capacitor C1 stops increasing. However, this variant of the invention, the border length is equal to twice the width W TFT extended section 107 of silicon film. Therefore, border length can be reduced without increasing space. Thus, the optical sensor under this option exercise inventions, characterized by the shorter length of the border reinforcement element that can weaken the capacity building V INT result of parasitic capacitance and leakage current after time t 1 . Consequently, optical sensor according to the variant of carrying out the invention is more preferable optical sensor according to the second variant of the invention.

In addition, as a modified version of the optical sensor according to the fifth variant of the invention, which is given as an example may be provided, the configuration in which amplifying element has sufficient usable area, and length of the border W TFT reduced even more without increasing space requirement due to the narrowing of the extended section 107 of silicon film width and through the creation of a wide section 107a in the extended section 107, as shown in Fig. 41 and Fig. 42. In this case, the equivalent electrical circuit n-channel TFT serving as a reinforcement element is shown in Fig. 43. According configuration this modified version, which is given as an example, the length of the border can be reduced even more in comparison with the configuration shown in Fig. 36 - Fig. 40. Therefore, capacity building of V INT result of parasitic capacitance and leakage current after time t 1 may be weakened even more. Consequently, it can be implemented optical sensor for higher dynamic range.

In addition, by optical sensor of this variant of the invention can also be obtained from the output signal sensor with excellent linearity when changing the light, as in the first variant of the invention, due to the fixation potential svetochnaya film LS diode D1 to a constant potential V LS and by establishing the value of constant potential V LS that meets the following condition:

V LS & GE; V RST.H

or preferably

V LS & GE; V RST.H +V th_p .

[Sixth variant of the invention]

The following is an explanation of the sixth option exercise the invention the present invention. Elements that have the same functions as the elements of the above explained the embodiments of the invention, marked with the same numbers positions and the corresponding items in the above variants of the invention, and their detailed explanations omitted.

In Fig. 44 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention. In Fig. 45 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention. In Fig. 46 on the form in enlarged scale shows the area where the formed amplifying element (diode D2). In Fig. 47 in schematic form in the cross section shows the wiring of corresponding fields in optical sensor according to the variant of carrying out the invention. In Fig. 48 shows the equivalent circuit diagram of the diode is used as a reinforcing element.

Optical sensor according to the variant of carrying out the invention differs from the above-mentioned options, the invention, the fact that as a reinforcement element used diode D2. It should be noted that used here diode D2 is a diode having the electrode shutter in the channel. Diode D2, with the electrode shutter in the field of the channel carries the gain during the period of reading using capacitance between the gate and the diode. As shown in Fig. 44, optical sensor according to the variant of the invention, includes diode D2, functioning as a reinforcement element. As shown in Fig. 44 - Fig. 46, the cathode (the area 107n of n-type semiconductor) diode D2 connected to the cathode (with the area 102n of n-type semiconductor) diode D1, and the anode region 107p semiconductor of p-type diode D2 connected with the storage node, INT.

In this configuration, the potential V INT cumulative a site could also be read as a gain, as shown in Fig. 9 in conjunction with a description of the first variant of the invention, using the reset signal and signal readout that shown in Fig. 4 in conjunction with a description of the first variant of the invention.

In addition, the configuration under this variant of the invention, has two following benefits compared to a configuration in which as a reinforcement element used p-channel TFT, as the fourth version of the invention.

The second advantage is that as the cathode (the area 102n of n-type semiconductor) diode D1 connected to the cathode (with the area 107n of n-type semiconductor) diode D2, then implement this connection it is easier compared to the fourth variant of the invention, in which the cathode (the area 102 n-type semiconductor) diode D1 connected with the region of a semiconductor of p-type.

Note that the configuration shown in Fig. 49 and Fig. 50, may be adopted as shown in the example of a modified variant of the configuration shown in Fig. 44 and Fig. 45. In Fig. 49 shows the equivalent circuit diagram of the optical sensor according to the first vidoesseanna version of this variant of the invention, which is given as an example. In Fig. 50 in the top view shows as an example the planar structure of the optical sensor according to the first vidoesseanna option, which is given as an example. As shown in Fig. 49 and Fig. 50, optical sensor according to the first vidoesseanna version of this variant of the invention, which is given as an example, has a configuration where added transistor M5, you want to reset.

The anode region 102p semiconductor of p-type diode D1 connected to the line VSS to supply the specified DC capacity through the line 108 and contacts 109 and 110. Electrode 131 of the transistor M3, intended for discharge continues the line of the RST. This configuration is first modified option, which is given as an example, has the advantage consisting in the ability of more reliable reset cumulative site using a transistor M3, intended for the discharge of which is connected with the storage node, compared with the configuration shown in Fig. 44 and Fig. 45, which the reset is performed via diodes D2.

In addition, as a second modified version, which is given as an example, can be used in the configuration shown in Fig. 51 and Fig. 52. In Fig. 51 shows the equivalent circuit diagram of the optical sensor according to the second vidoesseanna version of this variant of the invention, which is given as an example. In Fig. 52 in the top view shows as an example the planar structure of the optical sensor according to the second vidoesseanna version of this variant of the invention, which is given as an example. The configuration shown in Fig. 51 and Fig. 52, different from the above mentioned first modified version, which is given as an example, the fact that the anode region 102p semiconductor of p-type diode D1 connected with the RST line to signal reset. If this configuration, there is no need to provide a separate line VSS. Therefore, this configuration has the advantage in that area of the optical sensor can be reduced in comparison with the above first modified variant, which is given as an example.

In addition, through the optical sensor of this option the invention can also be obtained from the output signal sensor with excellent linearity when changing the light, as in the first variant of the invention, due to the fixation potential svetochnaya film LS diode D1 to a constant potential V LS and establish the value of constant potential V LS that meets the following condition:

V LS & GE; V RST.H

or preferably

V LS & GE; V RST.H +V th_p

[Seventh variant of the invention]

Below is the explanation of the seventh version of the implementation of the present invention. Elements that have the same functions as the elements of the above explained the embodiments of the invention, marked with the same numbers positions and the corresponding items in the above variants of the invention, and their detailed explanations omitted.

In Fig. 53 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention. In Fig. 54 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention.

Optical the sensor according to the variant of carrying out the invention has the configuration is obtained by modifying the configuration of the fourth variant of the invention, shown in Fig. 33 - Fig. 35 so that the metal film 113 serving as svetochnaya film LS, provided on the back of the diode D1, continues to location, opposite line RWS, and through this metal film 113, line RWS and insulating film (not shown)provided between them, formed a capacitor C SER , as shown in Fig. 53 and Fig. 54. In other words, in the optical sensor according to the variant of the invention, as a reinforcement element used p-channel TFT (transistor M4), as in the fourth variant of the invention.

In the configuration shown in Fig. 53, a capacitor C SER acts as a capacitor connected in series regarding capacities Cc and Ca between the metal film 113 and diode D1. Therefore, you can increase only INT C , C without increasing INT ' in the formula (6) of the first variant of the invention, the explanation given above, and, consequently, to improve the effect of the gain when reading.

Because the condenser C SER created in this way, the configuration in which as a reinforcement element used p-channel TFT, as in this variant of the invention, is significantly more effective to improve the effect of the gain when reading compared to the configuration in which as a reinforcement element used the variable capacitor.

In particular, in the case when the capacitor C SER combined with the configuration that as a reinforcement element used capacitor C1 variable capacity (the first variant of the invention), shown in Fig. 55A, the potential V INT cumulative site after reading affect not only the charges ΔQ C capacitor C1 but also charges Q S , injected from the condenser C SER . Therefore, in this configuration, a capacitor C SER stops decrease in the amplification of when reading.

On the other hand, as shown in Fig. 55B, in the case when the capacitor C SER combined with the configuration that as a reinforcement element used p-channel TFT (transistor M4), as in this variant of the invention, charges, injected from the condenser C SER , must also go through the transistor M4 when reading. Therefore, the charges (ΔQ S ), injected from the condenser C SER , also work on the improvement of the effect of amplification with charges ΔQ C .

Consequently, optical sensor, obtained by combining the capacitor C SER configuration, which as a reinforcement element used p-channel TFT, as in this variant of the invention, is effective for superior gain.

The above explanation is, for example, is obtained by combining the capacitor C SER configuration of the fourth version of the implementation the invention, which is shown in Fig. 33 - Fig. 35, but the same effect can be achieved by combining the capacitor C SER with any of the other configurations, the explanation of which is given in the descriptions of the fourth and fifth embodiments of the invention.

[Eighth an implementation option the invention]

The following is an explanation of the eighth version of the implementation of the present invention. Elements that have the same functions as the elements of the previous embodiments of the invention, marked with the same numbers positions and the corresponding items in the above variants of the invention, and their detailed explanations omitted.

In Fig. 56 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention. In Fig. 57 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention. As shown in Fig. 56 and Fig. 57, in the optical sensor according to the variant of the invention, the diodes D1 and capacitors C3 orderly manner parallel to the multiple dimensions in pixels. Capacitor C3 is a conventional capacitor (not a variable capacitor). It should be noted that the example shown in Fig. 56 and Fig. 57, has a configuration in which reading is performed with four diodes D1 one transistor M2 read, but the number of diodes D1 being read, not limited by this number.

In the example shown in Fig. 56 and Fig. 57, area pixel that is nearest to the transistor M2 reading generated p-channel TFT (transistor M4)that serves as an amplifier element and each of the other areas pixel formed conventional capacitor C3 (not a variable capacitor).

In this configuration, in which diodes (D1 connected in parallel, photoelectric current can be increased. In addition, as amplifying element is provided in the diode D1, near to the transistor M2 read from multiple diodes D1, the potential cumulative site can be read in a state with amplification. Thus, it can be implemented optical sensor with high sensitivity, without degradation of the signal-to-noise ratio. In addition, through the use of p-channel TFT as a reinforcement element length of the border can be reduced in comparison with the above case, which used the variable capacitor. This can improve the effect of the gain even more.

The following is an explanation of the ninth version of the implementation of the present invention. Elements that have the same functions as the elements of the above explained the embodiments of the invention, marked with the same numbers positions and the corresponding items in the above variants of the invention, and their detailed explanations omitted.

In Fig. 58 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention. In Fig. 59 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention. As shown in Fig. 58 and Fig. 59, in the optical sensor according to the variant of the invention, the diodes D1 and capacitors C3 orderly manner parallel to the multiple dimensions in pixels. Capacitor C3 is a conventional capacitor (not a variable capacitor). It should be noted that the example shown in Fig. 58 and Fig. 59, has a configuration in which reading is performed with four diodes D1 one transistor M2 read, but the number of diodes D1 being read, not limited by this number.

In the example shown in Fig. 58 and Fig. 59, area pixel that is nearest to the transistor M2 reading of these four diodes D1 created diode D2, serves as an amplifier element and each of the other areas pixel formed conventional capacitor C3 (not a variable capacitor). In addition, the pixel area adjacent to the transistor M2 read formed transistor M5 to reset.

In this configuration, in which diodes (D1 connected in parallel, photoelectric current can be increased. In addition, as amplifying element (diode D2) is provided in the diode D1, near to the transistor M2 read from multiple diodes D1, the potential cumulative site can be read in a state with amplification. Thus, it can be implemented optical sensor with high sensitivity, without degradation of the signal-to-noise ratio. In addition, through the use of a diode D2 as a reinforcement element length of the border can be reduced in comparison with the above case, which used the variable capacitor. This can improve the effect of the gain even more.

In addition, through the optical sensor of this variant of the invention can also be obtained from the output signal sensor with excellent linearity when changing the light, as in the first variant of the invention, due to the fixation potential svetochnaya film LS (not shown) diode D1 to a constant potential V LS and establish the value of constant potential V LS that meets the following condition:

V LS & GE; V RST.H

or preferably

V LS & GE; V RST.H +V th_p

[The tenth version of the invention]

The following is an explanation of the tenth version the implementation of the present invention. Elements that have the same functions as the elements of the above explained the embodiments of the invention, marked with the same numbers positions and the corresponding items in the above variants of the invention, and their detailed explanations omitted.

In Fig. 60 shows the equivalent circuit diagram of the optical sensor according to the variant of carrying out the invention. In Fig. 61 in the top view shows as an example the planar structure of the optical sensor according to the variant of carrying out the invention. Optical sensor according to the variant of carrying out the invention has the configuration is obtained by adding transistor M5 reset to the optical sensor according to the first variant of the invention, as shown in Fig. 60 and Fig. 61. Electrode 131 of the transistor M5 reset is a continuation of the line RST.

In this configuration, as well as the optical sensor according to the first variant of the invention, the potential cumulative site can be read in a state with amplification. Thus, it can be implemented optical sensor with high sensitivity, without degradation of the signal-to-noise ratio.

In addition, through the optical sensor of this variant of the invention can also be obtained from the output signal sensor with excellent linearity when changing the light, as in the first variant of the invention, due to the fixation potential svetochnaya film LS diode D1 to a constant potential V LS and establish the value of constant potential V LS that meets the following condition:

V LS & GE; V RST.H

or preferably

V LS & GE; V RST.H +V th_p

Moreover, this configuration in which ensured the presence of the transistor M5 reset, not only apply to the first variant of the invention, but also the second, third, fourth, fifth, seventh and eighth variants of implementation inventions, and above the effect can be achieved in each of these embodiments of the invention.

For example, in the above description of embodiments of the invention illustrates a configuration in which the optical sensors are connected line VDD, VSS and OUT, which also serve as lines COL origins. This configuration has the advantage in high aperture ratio of the pixels. However, since in this configuration lines for optical sensors also serve as lines COL origins, the output of the circuit of the sensor cannot be read at the time of filing of video signals for output images on the screen of the display device on line COL origins. Therefore, the signal is read for the output of the circuit of the sensor must be submitted during the period reverse, as shown in Fig. 14. Consequently, the lines VDD, VSS and OUT for optical sensors can be created separately from lines COL origins. Although in this configuration pixel has a low luminosity, it allows you to initiate the line for optical sensors separately from lines COL origins, and, hence, it has the advantage that the output of the circuit of the sensor can be read regardless of time of display on the device screen display.

INDUSTRIAL APPLICABILITY

The present invention has industrial applicability as a display device with optical sensors in the area of pixels substrates for active matrix.

1. The display device that contains the optical sensor in the field of pixels on the substrate active the matrix in which the optical sensor includes: - dimensional element for reception of the incident light; the signal line reset signal reset in the optical sensor, the signal line read in the message to be read in the light sensor; cumulative site that has the potential varies depending on the amount of light received a one-dimensional element during the period of registration, the registration period is a period of time after alarm reset until the signal is read; reinforcing element for strengthening the capacity of the cumulative site in accordance with the signal of reading; and the item, co sensor, reading capacity, reinforced amplifier element and output of this potential as output signal sensor schematic on the output line, which ensured the presence svetochnaya film on the side, the opposite side of the light-receiving surface relatively photodetector element, and this svetochnaya film connected with a source of power supply for fixing potential svetochnaya film is equal to a constant potential, and satisfied the following formula: V LS & GE; V RST.H , where V LS - constant potential, and V RST.H high - level capacity of the reset signal.

2. The display device according to claim 1 in which the focal element is pin-diode and satisfied the following formula: V LS & GE; V RST.H +V th_p , where V th_p - threshold voltage p-channel pin diode.

3. The display device according to claim 1 or 2, in which a gain element is the variable capacitor.

4. The display device according to claim 3, in which the variable capacitor is MOS-condenser (capacitor with the structure of a metal-oxide-semiconductor)that includes the signal line read, insulating film and the region of the semiconductor of p-type, formed in the silicon film.

5. The display device according to claim 3, in which the variable capacitor is MOS capacitor, which includes the electrode shutter element, co sensor, insulating film and n-type semiconductor, formed in the silicon film.

6. The display device according to claim 1 or 2, in which a gain element is a p-channel thin-film transistor.

7. The display device according to claim 6, in which the p-channel thin film transistor area of the channel is formed in a wide area of silicon film connecting photodetector item and cumulative node to each other, and the electrode shutter p-channel thin-film transistor created so that overrides this wide area.

8. The display device according to claim 1 or 2, in which a gain element is n-channel thin-film transistor.

9. The display device according to claim 1 or 2, in which a gain element is the diode with the electrode shutter in the channel.

10. The display device according to claim 1 or 2, which ensured the presence of the electrode, the opposite svetochnaya film, for the formation of capacity connected in series relative to parasitic capacitance between svetochnaya film and photodetector element, and this electrode is electrically connected to the signal line reading.

11. The display device according to claim 1 or 2, which ensured the presence of many-dimensional elements in the area of pixels, it is many-dimensional elements are connected in parallel, and reinforcement element is connected with one of the photoreception elements located at the end of a one-dimensional elements.

13. The display device according to claim 1 or 2, which additionally benefit from the presence of the switching element to reset the element, co sensor.

14. The display device according to claim 1 or 2, which amplifying element has a threshold potential, in which the state reinforcement element switches between "on" ("on") and off ("off") in the interval between the low-potential and high-potential signal reading.

15. The display device according to claim 1 or 2, additionally contains: other substrate, which is the opposite substrate active matrix; and liquid crystal, situated between the substrate active matrix, and the opposite substrate.

16. The display device containing optical the sensor in the field of pixels on the substrate active matrix, in which the optical sensor includes: - dimensional element for reception of the incident light; the signal line reset signal reset in the optical sensor, the signal line read in the message to be read in the light sensor; cumulative site that has the potential that changes depending on the amount of light received a one-dimensional element during the period of registration, the registration period is a period of time after alarm reset until the signal is read; amplification element for strengthening the capacity of the cumulative site in accordance with the signal of reading; and the item, co sensor, reading capacity, reinforced amplifier element and output of this potential as the output signal of the sensor schematic on the output line, which provided the presence svetochnaya film on the side opposite to the light-receiving surface relatively photodetector element, and this svetochnaya film connected with a source of power supply for fixing potential svetochnaya film is equal to a constant potential.

17. The display device on article 16, which photodetector element is pin-diode.