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The method of production of diffracting optical elements

IPC classes for russian patent The method of production of diffracting optical elements (RU 2442195):

G03F7/20 - Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B0027000000)
G02B5/18 - Diffracting gratings
G02B3/08 - with discontinuous faces, e.g. Fresnel lens
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FIELD: optics.

SUBSTANCE: invented method can be used for creation of complex diffracting optical elements (DOE) - Fresnel lens, kinoforms, focusers, correctors and others; the method includes coating of photoresist layer on the substrate, drying operation, exposure process, film development, thermohardening and reactive or plasma etch chemistry of the substrate by the mixture of gasses through the masking layer of the photoresist thermohardened layer; the thermoresistant photosensitive composition of poly (o-hydroxyamid) on the basis of 3,3'-dihydroxy-4,4'-diaminodiphenylmethane and iso-phthaloylchloridum with photosensitive derivatives of 1,2-naphthoquinone diazides can be used as photoresists; the substrate warmed up to 80-90°С is coated with the photoresist; drying is executed at 90±10°С during 30-40 minutes; thermohardening is performed in vacuum ((2-4)х10-5 mm hg) with smooth increase of the temperature from 200 to 370°С within 10-15 minutes with a sequent exposure to the temperature of 370°С for 30 minutes; ionic and reactive plasma etch chemistry is executed by the mixture of gases: SiCl4+Ar, freon 12 + oxygen.

EFFECT: enhancement of accuracy of manufacturing of micro-relief on the boundaries of discontinuity of the phase function of any configuration and widening of technological capabilities.

3 cl, 1 tbl.

 

The invention relates to the optical instrument and is intended to create complex diffractive optical elements (DOE) - Fresnel lenses, kinoforms, pokushalov, proofreaders and other devices.

A known method of manufacturing the optical structures on the application of EN No. 95109839 from 12.04.95 (BI No. 34, 1996), in which in a single operation masking and subsequent etching operation on the surface of the substrate is formed stepwise, optically effective, basic structure, which then during the operation of melting is heated by an electron beam in a vacuum chamber and is aligned with the capillary surface forces.

The disadvantages of this method are the low fidelity of optical structures by protravlivanija, and the complexity and high cost of the process.

Closest to the proposed technical solution is the invention according to US patent No. 5815327 from 29.09.98, IPC G02B 3/08. In this invention a method of manufacturing the Fresnel lens based on the formation of many ring-shaped structures by photolithography.

The disadvantage of this invention, as in the previous method, is the low precision of the microrelief on the outer edges of the rings (at the boundaries of the gap function)associated with uncontrollability applying photoresist on the outer side of Alec, as well as the possibility of making only a ring-shaped structures.

Technical challenge and a positive result of the proposed method of fabrication of diffractive optical elements is used, depending on the type of the substrate, the masking layer by plasma-chemical etching of the substrate of one of the two new resistant thermosealable photoresists, which allow high-temperature controlled reactive plasma etching of the substrate SiCl4+Ar freon 12, and by a mixture of freon 12 and oxygen with high precision micro-relief on the borders of the gap functions of any configuration.

The main distinguishing features of the claimed invention is that the composition used in the formation of the mask microrelief-resistant photoresist - heat-resistant photosensitive composition included heat-resistant poly(o-hydroxyamide) based on 3,3'-dihydroxy-4,4'-diaminodiphenylmethane and isophthalonitrile and a mixture of 3,3'-dihydroxy-4,4'-diaminodiphenylmethane and bis-(3-aminopropyl)-dimethyl-siloxane and isophthalonitrile with photosensitive derivative of 1,2-nattokinase, application of the photoresist is carried out on the substrate heated to 80-90°C, followed by drying photoresistor layer at 90±10°C within 30-40 is in and thermosublimation formed by photolithographic method of the microrelief in vacuum(2-4)×10 -5mm Hg) at a smooth temperature increase from 200 to 370°C for 10-15 min, followed by exposure at 370°C for 30 min, and the use of gases in ionic and reactive plasma-chemical etching of the substrate freon 12 and a mixture of freon 12 and oxygen are taken in the ratio of oxygen - 25%: freon 12-75%.

Since poly(o-hydroxyamide) after heat treatment at 370°C becomes resistant polybenzoxazole, the film formed from the photoresist on its basis, subject to thermosublimation at 370°C, can withstand temperatures up to 400°C in air and 450°C in an inert atmosphere up to 1 h, with a mass loss not greater than 5%, and the effects of a mixture of gases at elevated temperatures. By changing the ratio of initial reagents in the synthesis of poly(o-hydroxyamide) it is possible to vary the molecular weight of the polymer and, consequently, the viscosity of the polymer solution, which enables to obtain a film of a certain predetermined thickness. Unlike films obtained from nezabvennogo poly(o-hydroxyamide), high temperature resistance and chemical resistance of polybenzoxazole formed during thermal zdublowany poly(o-hydroxyamide), allow you to vary the composition of the plasma, which greatly expands the field of application of the coating as a mask during plasma trawley the substrates of different chemical nature.

Example 1. a) Obtaining poly(o-hydroxyamide) (I): 1 g-mol of 3,3'-dihydroxy-4,4'-diaminodiphenylmethane dissolved in 11.2 g-mol dimethylacetamide, containing not more than 0.035% of moisture at room temperature. The solution is cooled to 0-(-5°C) and to the cooled solution with stirring for 5-7 minutes add 1.06 g-mol carefully crushed isophthalic acid dichloride (II), such a rate that the temperature of the reaction mixture did not rise above 40°C. after the addition the mixture is stirred for 90-120 min, removing the cooled, then added 0.06 g-mol of o-aminophenol. After adding the total number of o-aminophenol reaction mass is again cooled to 0-(-5°C) and added dropwise over 15-20 min add 2 g-mol of freshly epichlorohydrin, and then stirred solution at room temperature for 60 minutes Obtained viscous polymer solution was diluted with twice the volume number of dimethylacetamide, dimethylformamide or N-methyl-α-pyrrolidone and pinned cooled to 0-(-5°C.) mixture of solvents: chloroform-diethyl ether, taken up in a volume ratio of 5:1. The precipitation of poly(o-hydroxyamide) is filtered off, dried at 70°C for 5 h, then at 40°C. in a vacuum drying Cabinet 3 hours quantitative Output, the viscosity of 0.5%solution in concentrated sulfuric acid 0.89 DL/g

b) Receiving the Si content is asego poly(o-hydroxyamide) (II). 0.6 g-mol of 3,3'-dihydroxy-4,4'-diaminodiphenylmethane and 0.4 g-mol of bis-(3-aminopropyl) dimethyl-siloxane dissolved in 11.2 g-mol dimethylacetamide, containing not more than 0.035% moisture, at room temperature. The mixture is stirred at room temperature for 1 h, then cooled to 0-(-5°C) and to the cooled solution with stirring for 5-7 minutes add 1.06 g-mol carefully crushed isophthalic acid dichloride, with such speed that the temperature of the reaction mixture did not rise above 40°C. after the addition of isophthalic acid dichloride, the reaction mass is stirred for 4 h at room temperature, then to it was added 0.06 g-mole o-aminophenol, stirred 1 h, then cooled to 0-(-5°C), dropwise in for 30 min add 2 g-mol of freshly epichlorohydrin and stirred polymer solution at room temperature for 2 h Shows the viscosity of 0.5%solution of silicon-containing poly(o-hydroxyamide) when the ratio of amine components in the concentrated sulfuric acid is 0.5-0.6 DL/g

C) obtaining a photoresist (A) of poly(o-hydroxyamide (I) 23 concerns (19.96 wt.%) the obtained dry poly(o-hydroxyamide) is mixed with 61.9 concerns (53.7 wt.%) dimethylacetamide and leave to swell for 12 to 16 h, then stirred at room temperature for 5-6 hours To the resulting solution was added a solution of 4. concerns (3.99 wt.%) β,β-bis-nattokinase-(1,2)-5-sulfoethyl-(4-hydroxyphenyl)propane in 25.7 concerns (22.3 wt.%) dimethylacetamide and the mixture is stirred for 5-6 h to complete the registration and dissolution of the components. Directly before use, the composition is filtered through a 1 μm filter (Millipor) and centrifuging applied on a silicon substrate (substrate) with a metal coating. Deposited film is subjected to drying in a horizontal position at 95°C for 15 min (the film thickness of 1.7-1.8 µm), exhibiting mercury lamp DRSH-250 12-15 C, under illumination of the working surface is not less than 50000 Lux, show a 0.3%solution of sodium hydroxide or 2%solution of trisodium phosphate. The minimum size of the opened Windows of 1 μm. The resulting relief is subjected to a stepwise zdublowany 30 min at 150°C, then 30 min at 350°C. the film Thickness after termozapressovany reduced to 1.3 μm due to the removal of water by cyclodehydration and decomposition products of the light-sensitive component. The resistance zagubinoga elevation is 450°C in an inert atmosphere.

g) obtaining a photoresist (B) of poly(o-hydroxyamide) (II)). To 425 concerns the reaction of the polymer solution (II) is added with stirring 18 concerns β,β-bis-nattokinase-(1,2)-5-sulfoethyl-(4-hydroxyphenyl)propane 43 concerns dimethylacetamide. The solution is stirred, protected from the ETA, at room temperature for 4 h Immediately before use of the composition is filtered through a 1 μm filter (Millipor).

Example 2. Obtaining a masking film comprising a photoresist. The resulting photoresist by centrifuging applied to the substrate (GaAs, InP, glass K-8), heated to 80-90°C. the Deposited film is subjected to drying in a horizontal position at 90±10°C for 30-40 min, exhibiting mercury lamp DRSH-250 with 30-35 through the template, when the illumination of the working surface is not less than 30000 Lux, show a 0.3-0.4%aqueous solution of sodium hydroxide. The resulting relief is subjected to a stepwise thermosublimation in vacuum(2-4)×10-3mm Hg) at a smooth temperature increase from 200 to 370°C for 10-15 min, followed by exposure at 370°C for 30 min Resistance zagubinoga elevation is 400°C in air and 450°C in an inert atmosphere.

Example 3. Plasma etching of the substrate through the mask layer thermostabling photoresist. As gases using SiCl4+Ar freon 12 and a mixture of freon 12 - oxygen taken in the ratio of oxygen - 25%, freon 12-75%. While etching is 60-300 sec depending on specified depth stain. Since the mask layer of heat-resistant photoresist can withstand temperatures of 400°C, conduct etching of the substrate, heated to 280-320°C. This enables to perform this operation is the situation for more than a short time with high precision of the playing surface without the formation of defects in the mask surface.

Thus, the proposed method of manufacturing the diffraction grating allows to increase the precision of the microrelief on the borders of the gap phase function of any configuration and to expand its technological capabilities. This conclusion is supported by the table, which shows the comparative data for the etching of substrates of different chemical nature, using as a mask zagubinoga heat-resistant photoresist.

Table
№ p/p Substrate type The mask type Type plasma The film thickness before etching, mcm The time of etching, the The film thickness after etching, mcm Care film thickness, microns
1 GaAs Zagubiony heat-resistant photoresist (A) SiCl4+Ar 1.9 300 1.46 0.44
2 GaAs Nezadelannyh heat-resistant photoresist ( SiCl4+Ar 2.4 300 1.83 0.57
3 GaAs Zagubiony heat-resistant photoresist SiCl4+Ar 1.3 600 0.98 0.32
4 GaAs Nezadelannyh heat-resistant photoresist (A) SiCl4+Ar 1.9 600 1.2 0.70
5 InP Zagubiony heat-resistant photoresist (A) SiCl4+Ar 2.0 300 1.9 0.1
6 InP Nezadelannyh heat-resistant photoresist (A) SiCl4+Ar 1.6 300 0.96 0.64
7 InP Zagubiony heat-resistant photoresist (A) SiCl4+Ar 0.7 600 0.54 0.16
8 InP Nezadelannyh heat-resistant photoresist (relief) (A) SiCl4+Ar 1.6 600 1.15 0.45
9 Glass Zagubiony heat-resistant photoresist (relief) (B) Freon 12 2.75 300 2.2 0.55
10 Glass Standard photoresist AZ 1350 (relief) Freon 12 1.33 300 Full drain
11 Glass The chromium is + zagubiony heat-resistant photoresist (B) (relief) Freon 12 (75%) + oxygen (25%) 2.75 60 1.0 1.75 Relief protrails to the desired depth, the lacquer film is partially left
12 Glass The chromium is + zagubiony heat-resistant photoresist Oxygen 2.7 300 Full drain
13 Glass The chromium is + zagubiony (B) Freon 12 (66%) + oxygen (33%) 2.7 120 0.05 2.65
14 Glass The chromium is + zagubiony (B) Freon 12 (66%) + oxygen (33%), 2.75 60 Partial etching

1. A method of manufacturing a diffractive optical elements on a substrate, comprising applying photoresistor layer on the substrate, drying, exposure, have the ing films their thermosublimation and jet or plasma etching of the substrate with a mixture of gases through a mask layer thermostabling photoresist, characterized in that the photoresist using heat-resistant photosensitive composition of poly(o-hydroxyamide) based on 3,3'-dihydroxy-4,4'-diaminodiphenylmethane and isophthalonitrile with photosensitive derivative of 1,2-nattokinase, the application of the photoresist is carried out on the substrate heated to 80-90°C, drying photoresistor layer is carried out at (90±10)°C for 30-40 min, thermosublimation carried out in vacuum(2-4)×10-5mm Hg) at a smooth temperature increase from 200 to 370°C for 10-15 min, followed by exposure at 370°C for 30 min, and reactive ion plasma etching is performed with the mixture of gases SiCl4+Ar freon 12 + oxygen.

2. The method according to claim 1, characterized in that the ratio of gases in a mixture of freon 12: oxygen 75%:25%.

3. The method according to claim 1, characterized in that the substrate using GaAs, InP, glass (brand K8).

4. The method according to claim 1, wherein the plasma etching is carried out at a temperature of the substrate 280-320°C.

 

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