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Procedure for surface of diamond grains roughing |
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IPC classes for russian patent Procedure for surface of diamond grains roughing (RU 2429195):
Method of annealing crystals of group iia metal fluorides / 2421552
Method involves subjecting a grown and hardened, i.e. correctly annealed crystal, to secondary annealing which is performed by putting the crystal into a graphite mould, the inner volume of which is larger than the crystal on diameter and height, and the space formed between the inner surface of the graphite mould and the surface of the crystal is filled with prepared crumbs of the same material as the crystal. The graphite mould is put into an annealing apparatus which is evacuated to pressure not higher than 5·10-6 mm Hg and CF4 gas is then fed into its working space until achieving pressure of 600-780 mm Hg. The annealing apparatus is then heated in phases while regulating temperature rise in the range from room temperature to 600°C, preferably at a rate of 10-20°C/h, from 600 to 900°C preferably at a rate of 5-15°C/h, in the range from 900 to 1200°C preferably at a rate of 15-30°C/h, and then raised at a rate of 30-40°C/h to maximum annealing temperature depending on the specific type of the metal fluoride crystal which is kept 50-300°C lower than the melting point of the material when growing a specific crystal, after which the crystal is kept for 15-30 hours while slowly cooling to 100°C via step-by-step regulation of temperature decrease, followed by inertial cooling to room temperature.
Method of thermal treatment of single-crystal substrate znte and single-crystal substrate znte / 2411311
Method includes the first stage of increasing temperature of single-crystal substrate ZnTe up to the first temperature of thermal treatment T1 and maintenance of substrate temperature within specified time; and the second stage of gradual reduction of substrate temperature from the first temperature of thermal treatment T1 down to the second temperature of thermal treatment T2, lower than T1 with specified speed, in which T1 is established in the range of 700°C≤T1≤1250°C, T2 - in the range of T2≤T1-50, and the first and second stages are carried out in atmosphere of Zn, at the pressure of at least 1 kPa or more, at least 20 cycles or at least 108 hours.
Method of growing heat resistant monocrystals / 2404298
Crystals are grown using the Kyropoulos method with an optimum annealing mode, carried out while lowering temperature of the grown monocrystal to 1200°C at a rate of 10-15°C/hour and then cooling to room temperature at a rate of 60°C/hour.
Method of producing monocrystals of calcium and barium flourides / 2400573
Method involves crystallisation from molten mass through Stockbarger method and subsequently annealing the crystals through continuous movement of the crucible with molten mass from the upper crystallisation zone to the lower annealing zone while independently controlling temperature of both zones which are separated by a diaphragm. The crucible containing molten mass moves from the crystallisation zone to the annealing zone at 0.5-5 mm/h. Temperature difference between the zones is increased by changing temperature in the annealing zone proportional to the time in which the crucible moves from the beginning of crystallisation to its end, for which, while maintaining temperature in the upper crystallisation zone preferably at 1450-1550°C, in the lower annealing zone at the beginning of the crystallisation process temperature is kept at 1100-1300°C for 30-70 hours, thereby ensuring temperature difference of 450°C between the zones at the beginning. Temperature of the annealing zone is then lowered to 500-600°C in proportion to the speed of the crucible with the growing crystal. Temperature of the annealing zone is then raised again to 1100-1300°C at a rate of 20-50°C/h, kept for 18-30 hours after which the zone is cooled to 950-900°C at a rate of 2-4°C/h, and then at a rate of 5-8°C/h to 300°C. Cooling to room temperature is done inertially. Output of suitable monocrystals of calcium and barium fluorides with orientation on axes <111> and <001>, having high quality of transparency, uniformity, refraction index and double refraction is not less than 50%.
Superstrong single crystals of cvd-diamond and their three-dimensional growth / 2389833
Method includes placement of crystalline diamond nucleus in heat-absorbing holder made of substance having high melt temperature and high heat conductivity, in order to minimise temperature gradients in direction from edge to edge of diamond growth surface, control of diamond growth surface temperature so that temperature of growing diamond crystals is in the range of approximately 1050-1200°C, growing of diamond single crystal with the help of chemical deposition induced by microwave plasma from gas phase onto surface of diamond growth in deposition chamber, in which atmosphere is characterised by ratio of nitrogen to methane of approximately 4% N2/CH4 and annealing of diamond single crystal so that annealed single crystal of diamond has strength of at least 30 MPa m1/2.
Ceramic laser microstructured material with twinned nanostructure and method of making it / 2358045
Proposed laser material is a ceramic polycrystalline microstructure substance with particle size of 3-100 mcm, containing a twinned nanostructure inside the particles with size of 50-300 nm, made from halides of alkali, alkali-earth and rare-earth metals or their solid solutions, with vacancy or impurity laser-active centres with concentration of 1015-1021 cm-3. The method involves thermomechanical processing a monocrystal, made from halides of metals, and cooling. Thermomechanical processing is done until attaining 55-90% degree of deformation of the monocrystal at flow temperature of the chosen monocrystal, obtaining a ceramic polycrystalline microstructure substance, characterised by particle size of 3-100 mcm and containing a twinned nanostructure inside the particles with size of 50-300 nm.
Method for thermal processing of semi-finished abrasive tools on organic thermosetting binding agents / 2351696
Invention is related to the field of abrasive processing and may be used in production of abrasive tools for polishing of blanks from different metals and alloys. Full cycle of thermal processing of semi-finished abrasive tools on organic thermosetting binding agents includes stages of preliminary heating and hardening in microwave field of SHF- chamber with frequency of 2450 MHz for abrasive tool with thickness of up to 100 mm and with frequency of 890 - 915 MHz for abrasive tool with thickness of more than 100 mm. Prior to SHF-thermal processing semi-finished abrasive tools are placed into radio transparent steam-and-gas permeable container-thermostat. After temperature of thermosetting binding agent complete polymerization has been achieved, and after pause at this temperature, thermostat is withdrawn from SHF-chamber, and semi-finished abrasive tools are kept in thermostat until their temperature drops at least by 80°C. After that thermostat is opened, semi-finished products are cooled in open air and then withdrawn from thermostat.
Method for thermal treatment of half-finished abrasive tools on organic thermosetting binders / 2349688
Group of half-finished abrasive tools prior to thermal treatment is placed into thermally insulated steam and gas permeable radiolucent thermostat. Full cycle of mentioned half-finished articles thermal treatment is carried out. Cycle includes stages of preliminary heating and hardening of half-finished items group in microwave field of SHF-chamber with frequency of 2,450 MHz for abrasive tools with thickness of up to 100 mm and frequency of 890...915 MHz for abrasive tools with thickness of more than 100 mm to achieve temperature of organic thermosetting binder complete polymerisation with further maintenance at this temperature. In process of SHF thermal treatment volatile substances are forcedly and uniformly removed from free volume of thermostat through slots arranged in front and back walls of thermostat. Possibility for vapours of volatile substances to be saturated is eliminated with preservation of maximum possible effect of thermostat working area thermal insulation effect and provision of half-finished items temperature difference that does not exceed ±10% of its average level inside thermostat.
Method of obtaining synthetic minerals / 2346887
Invention concerns obtaining synthetic minerals and can be applied in technics and jewellery. Method of artificial mineral synthesis is implemented by crucible method involving blend processing in plasma torch of plasmotron to obtain melt, melt drop feeding into crucible by plasma-forming gas flow with further crystallisation. Seeding agent is placed at crucible bottom in advance, and synthesis is performed at plasmotron output of 12 kW and blend feed rate of 2-3 g/min with simultaneous annealing of the melt crystallised on seeding agent in annular furnace for 2-3 hours at 1000°C. Preliminary placement of seeding agent to crucible bottom ensures accelerated crystal growth and higher process performance. Simultaneous annealing of artificial minerals reduces tension in end product significantly.
Method of producing mono-crystalline plates of arsenide-indium / 2344211
Invention refers to semi-conductor technology of AIIIBV type compositions. The method is implemented by means of bombarding mono-crystalline plates of arsenide-indium with fast neutrons with following heating, annealing and cooling. The mono-crystalline plates are subject to bombardment with various degree of compensation at density of flow not more, than 1012 cm-2 c-1 till fluence F=(0.5÷5.0)·1015 cm-2 , while annealing is carried out at 850÷900°C during 20 minutes at the rate of heating and cooling 10 deg/min and 5 deg/min correspondingly.
Colourless diamond layer / 2415204
Method involves preparation of a substrate, using a HOPF-synthesis atmosphere which contains nitrogen in concentration of over 300 parts per billion (ppb), and adding to the synthesis atmosphere a second gas which contains silicon atoms as dopant atoms of a second type, where dopant atoms of the second type are added in a controlled manner in an amount which ensures reduction of negative effect of nitrogen on colour, where the layer of monocrystalline diamond has thickness of greater than 0.1 mm, concentration of silicon in the dominant volume of the diamond layer is less than or equal to 2·1018 atoms/cm3, concentration of nitrogen in the dominant volume of the diamond layer is greater than 2·1016 atoms/cm3 and less than or equal to 2·1017 atoms/cm3, and the ratio of concentration of nitrogen to concentration of silicon in the dominant volume of the diamond layer is between 1:20 and 20:1. Addition of a source gas which contains silicon counters the negative effect of nitrogen contained in the HOPF-synthesis atmosphere on the colour of the diamond.
Method of depositing diamond phase nucleation centres onto substrate / 2403327
Method involves preparation of a suspension with weight concentration of nanodiamond particles in a water-based solution selected from the relationship: K=α(ρa/ρb)(r/R)3, feeding the suspension into a gas stream having spraying nozzle velocity from 100 m/s to 400 m/s in order to spray the suspension of nanodiamond particles and deposit them onto a substrate placed at a distance from the sprayer equal to 1-2 times its diametre for a period of time defined the relationship: t=(Sr)/(β(ρb/ρa)KQ), where: K is the weight concentration of nanodiamond particles in the suspension, wt %; a is a coefficient 1≤α≤10; ρa is density of nanodiamond particles, ρa=3.2 g/cm3; ρw is density of water, ρw=1 g/cm3; r is average radius of the nanodiamond particles, r=(4-15) nm; R is average radius of the sprayed droplets, R=(0.5-10) mcm; t is time for depositing the particles, min; β is a coefficient of proportionality, 0.05≤β≤0.1; S is surface area of the substrate, cm2; Q is flow rate of the suspension, Q=(0.06-6.0) cm3/min.
Colourless monocrystalline diamond obtained via high-growth rate chemical gas-phase deposition / 2398922
Method involves controlling temperature of a diamond growth surface so that all temperature gradients on the said surface do not exceed 20 єC, and growth of a monocrystalline diamond on the said surface through chemical gas-phase deposition in a microwave plasma at growth temperature in a deposition chamber, the atmosphere of which contains approximately 8-20% CH4 per unit H2 and approximately 5-25% O2 per unit CH4. Diamonds larger than 10 carat may be obtained using the method, which is the subject of the present invention.
Procedure for production of nano-diamonds / 2396377
Invention refers to process of production of nano-diamonds of great industrial importance in electronics as high temperature semi-conductors, high-sensitive metres in complex metering instruments with powerful solid-state laser, etc. Nano-diamonds are produced by crystallisation from water solution of spirit (ethyl or methyl). Also to stabilise nano-diamonds formation spirit is mixed with amino-acids. At least one alkali metal (lithium or potassium) is added into the produced mixture to bond free atoms of hydrogen escaping in the process of spirit decomposition. The crystallisation process is carried out in a closed chamber at temperature 400-700°C during 4-120 hours.
Superstrong single crystals of cvd-diamond and their three-dimensional growth / 2389833
Method includes placement of crystalline diamond nucleus in heat-absorbing holder made of substance having high melt temperature and high heat conductivity, in order to minimise temperature gradients in direction from edge to edge of diamond growth surface, control of diamond growth surface temperature so that temperature of growing diamond crystals is in the range of approximately 1050-1200°C, growing of diamond single crystal with the help of chemical deposition induced by microwave plasma from gas phase onto surface of diamond growth in deposition chamber, in which atmosphere is characterised by ratio of nitrogen to methane of approximately 4% N2/CH4 and annealing of diamond single crystal so that annealed single crystal of diamond has strength of at least 30 MPa m1/2.
Method of purifying diamond / 2386586
Invention relates to chemical methods of purifying natural diamonds, where contaminants are in form of organic and mineral deposits and metallic impurities formed through enrichment of diamond-bearing rocks, as well as synthetic diamonds in which metallic impurities accompany synthesis, with the aim of using the said diamonds as grinding powder in electroplating when making a precision diamond tool. The method involves treatment of diamond at normal atmospheric conditions in a solution with the following composition: water, hydrofluoric acid, nitric acid, sulphuric acid and hydrogen peroxide in volume ratio of 5:1:1:2:(1-10) respectively, with periodic addition of hydrogen peroxide in proportion to its consumption. Nickel metal is added to the solution before treatment of the diamond.
Method of embedding mark into diamond, obtained through chemical deposition / 2382122
Method of embedding trade marks or identification marks into monocrystalline diamond material, obtained through chemical gas-phase deposition, involves preparation of a diamond substrate and initial gas, dissociation of the initial gas, which provides the process of homoepitaxial growth of diamond, and to put trade marks or identification marks into synthetic diamond material at least one dopant chemical element selected from a group comprising nitrogen, boron and silicon is introduced into the synthesis process in a controlled manner in form of defect centres which upon excitation emit radiation with characteristic wavelength and in such concentration such that the trade mark or identification mark, under normal observation conditions, should not be easily seen or should not affect the perceived quality of the diamond material, but should be seen or become seen when illuminated with light with wavelength of the excited defect centres, the value of which is less than the said characteristic wavelength of radiation emitted by the defect centres, and visible under observation conditions where the said illumination is not visible to the observer.
Personalised grown gem diamond / 2372286
Invention relates to artificail gem diamonds identifiable with a certain person or animal. A personalised gem diamond is grown from a charge that includes carbon being a product of carbonisation of the material provided by the customer, powder of spectroscopically pure graphite and a marker for which at least two elements are used that are selected from a lanthanide group and taken in a arbitrarily prescribed ratio to the extent between 0.01 to 10 mcg /g.
Method for diamonds purification / 2367601
Method includes stagewise diamonds treatment in autoclave at increased temperature and pressure under the action of microwave radiation: in the first stage -with mixture of nitric acid and hydrogen peroxide, in the second stage- with mixture of concentrated nitric, chlorhydric and hydrofluoric acids. The treatment in both stages is carried out in acids gas phase at autoclave filling 45-55%, in the first stage the volume ratio nitric acid/hydrogen peroxide is 4:1 respectively, the treatment is carried out at temperature 215-250°C during 15-60 min. In the second stage the volume ratio nitric acid/chlorhydric acid/hydrofluoric acid is 5:4:1 respectively; the treatment is carried out at the same temperature during 15-150 min. In the third stage the mixture is treated with 5% solution of chlorhydric acid/ during 5-15 min and temperature not more than 160°C.
Multiple-punch high-pressure apparatus for making diamonds / 2356615
Present invention relates to chemical engineering, and to high-pressure technology of making diamonds, particularly for growing large crystals, the process of which is long. The high-pressure apparatus has a multiple-punch unit, which is enclosed in a sealed elastic casing 6. In the first version the multiple-punch unit is fitted on a sealed hollow platform 1, which has at least two sealed cavities 10, at least one of which is linked through a valve with the external environment for filling with water when submerged. In the second cavity there is a motor 11, with a pump for pumping water from the first sealed cavity when raising the apparatus. In the second version the sealed cavities can be made in the sealed hollow platform and in one of the punches. In the third version the sealed cavities can be made in at least two punches of the multiple-punch unit.
Abrasive material / 2428299
Invention relates to abrasive industry, particularly, to production of abrasive grains, grinding and micro powders with coat used in making various tools as well as solo product. Proposed material comprises material particles with their surface coated discontinuous with nano coat made up of dispersed lubing agent in amount of 0.01 - 5.00 wt % of unprocessed material bulk. Said dispersed coat consists of iron, silicon and aluminium oxyphosphates structurally bonded with material particles surface phosphorus atomic groups with amount phosphorus compounds in total composition of coat making 0.5 - 1.5 wt %, while that of finely dispersed iron, silicon and aluminium makes 2 to 6 wt %.
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FIELD: machine building. SUBSTANCE: procedure for surface of diamond grains roughing consists in mixing diamond grains with metal powder and in heating obtained mixture to temperature of 800-1100°C in vacuum as high, as 10-2-10-4 mm. As metal powders there are taken powders of iron, nickel, cobalt, manganese, chromium, their alloys or mixtures. Powders not inter-reacting with diamond grains at heating can be added to the mixture. EFFECT: fabrication of diamond grains with optimal amount of recesses, possessing specified geometric parametres; reduced losses of diamond material and maintaining strength characteristics of grains. 4 cl, 1 dwg
The invention relates to the field of processing of diamond grains, more specifically, to obtain the roughness on the surface of the diamond grains. Such grains can be used for the manufacture of diamond tools, such as grinding wheels, ruling the tool, the tool for drilling equipment, instrumentation, etc. It is known that the performance of the diamond tool largely depends on the strength retention of the diamond grains bonded in the working process of the tool. In the manufacture of diamond tools for the organic binding are mainly used nizkoplotnye diamond grains, such as AC2, AC4 and IS shaped in the form of aggregates, splices, fragments. Such grains have developed surface. Thanks to development of the surface they are well kept ligament. Tools on metal cords, manufactured by the method of galvanothermy or electrotype or by powder metallurgy methods, soldering, etc. and intended, for example, to process difficult materials with a large material removal, use high diamond grains constituting whole crystals, fragments of crystals, aggregates, i.e. crystals, which are mainly planar or non-planar surface. Such grains have poor adhesion with the binder and the working process of the tool is rolled before as they are completely worn out. To improve the strength retention of the diamond grains in such instruments or take a bunch of forming an adhesive bond with the diamond grains or on the surface of the grains applied metal coating, which also forms an adhesive contact with the surface of the diamond grains and a binder metal bond. These methods improve retention of the diamond grains together isn't always possible. For example, in the manufacture of tools in the galvanic bunch they are unacceptable, since the consolidation of the diamond grains on the surface of the body is only due to the mechanical forces of the clutch, and the use of metallic grains causes dentatoalatum on the surface of the tool. Another way to improve the bonding of the diamond grains bonded is applied to the smooth surface of the diamond grains roughness, each representing a different form of grooves, holes, etc. In the production of the binder falls within these grooves and more securely holds the grains together. A method of obtaining the roughness on the surface of the diamond grains, wherein the diamond grains is etched by keeping them in molten nitrate - potassium nitrate at a temperature of about 700°C. In the etching on the surface of the diamond see is to appear recesses and grooves, who in the manufacture of the tool are filled with a material ligaments, firmly holding the grain in the process tool (German patent No. 1108641, EV, 1957, U.S. patent No. 5349342, CL 51-298, 1968). The disadvantage of this method is that when processed by nitrate addition to the formation of grooves, etching is not only the surface of diamond grains, and thus more intensively travliata sharp cutting edges and corners of the crystal, which leads to significant weight loss of the diamond material and a sharp decrease in the strength of the grain as a whole. This is especially true for synthetic diamonds. The closest to the proposed solution is the method of obtaining the roughness on the surface of the diamond grains, as described in the application Germany No. 3625743, CL SW 31/06, 1986). The method consists in the fact that the diamond powders are mixed with metal powders, the mixture is placed in a hydrogen or hydrogen-containing environment, heated to 700-900°C and maintained for some time. As metal powders take iron, cobalt, Nickel, a mixture or alloy. When heated diamond carbon diffuses into the metal particles, which touches the surface of the grain, and the hydrogen reacts with the dissolved solid metal carbon with formation of gaseous methane. The disadvantage of this method is that the process-the Oia diamond material from the surface of the diamond grains in the hydrogen or hydrogen-containing environment is continuous, depending on partial pressure and humidity H2and is therefore difficult to control. As a result, the surface of diamond grains can be formed too large depressions and accordingly will be a large loss of the diamond material and, therefore, a strong destruction of the diamond crystal. Furthermore, the method does not provide optimum number of grooves on the surface of diamond grains, and it is also associated with loss of strength of the crystal and unfounded the loss of the diamond material. In addition, a hydrogen environment at carrying out various processes is explosive, and requires continuous monitoring. The technical challenge is to simplify the method of obtaining the roughness on the surface of the diamond grains, the possibility of obtaining diamond grains with an optimum number of grooves on the surface of the grain and the optimal geometric parameters of these recesses, resulting in the loss of the diamond material and maintaining the strength characteristics of the beans. The technical result is achieved in that in the method of obtaining the roughness on the surface of the diamond grains, including mixing of diamond grains with a metal powder, heating the mixture and separation of the diamond grains from metal powders, heating the mixture p is avodat in vacuum at a temperature of 800-1100°C. As metal powders take the powders of iron, Nickel, cobalt, manganese, chromium, and their alloys or mixtures. For the Department of the diamond grains from metal powders after heat treatment of diamond grains is exposed to acid. To regulate on the surface of the diamond grains in the number of recesses (etching pits) in a mixture of diamond grains and the metal powders are additionally injected powders which, when heated, it does not interact with the diamond grains. As such powders can be used, for example, powders of oxides, carbides, nitrides, silicides, etc. In the pictures (see figure 1) shows the surface topography of diamond grains after heating it in the presence of metal powder in a vacuum. The method is as follows. Diamond grains are mixed with a metal powder, which take the powders of iron, Nickel, cobalt, manganese and their alloys, or a mixture. These metal powders in the presence of the diamond to form a solid solution and carbide compounds at relatively low temperatures of 800-1100°C. the Amount of the metal powder should be such that all diamond grains were surrounded them. The device creates a vacuum and heat the mixture to a temperature of 800-1100°C. the magnitude of the vacuum is 10-2-10-4mm R is St The dwell time at temperature is 0.5-1.5 hours. When heated to the specified temperature of the metal powders that are in contact with the surface of the diamond grains to form in places of contact of solid solutions of carbides due to the carbon of the diamond material. When almost complete transition metal carbide powder in the state of the process practically stops. Thus the depth and the geometry of the pits formed on the surface of diamond grains can be adjusted by the size of the metal powder, temperature, time of heating. At temperatures lower than 800°C. the process of dissolution of carbon diamond in the metal flows too slowly, and higher than 1100°C, the temperature is impractical, as heating the diamond above this temperature reduces the impact strength of rough diamonds. After cooling, the sintered fragile agglomerate consisting of diamond grains and the metal powder, and destroy the diamond grains are separated from the main mass of crushed granite. Selected diamond grains are grains in the form of "hedgehog", the surface of which the metal powders are strongly linked with the grain due to the formation of the carbide phase. Diamond grains with attached metal powder is subjected to a treatment with an acid or mixture of acids to dissolve the metal and carbides. The relief surface and the treated diamond grain includes flat areas and depressions the resulting reaction of the carbon of the diamond material and the metal powder. Choose the size of the metal powders is mainly determined by the desired dimensions of the recesses, which is necessary to obtain on the surface of the grain, the size of the original diamond grains, etc. mainly offered to take the powders from 1 μm to 45 μm. But you can take over the large metal powders. The number of pits on the surface of diamond grains is regulated by the introduction of a mixture of powders, which when heated in the above conditions do not interact with the diamond grains. In this case there is a partial replacement of metal powders, in which the number of contacts grain diamond - metal powder is reduced and accordingly decreases the total number of dimples on the surface of diamond grains. The process of the diamond grains is also carried out as described above. As powders that are not affected by heating in the interaction with the diamond grains, take, for example, powders of oxides, carbides, nitrides, silicides (aluminum oxide, silicon carbide, tungsten carbide etc). These powders can be commensurate with metal powders, but can be smaller or larger metal powders. On the surface of diamond powder described method can be used on ucati pit holes of various shapes, since the processing method of the diamond grains in the vacuum allows you to copy the shape of the surface of the metal powder. This can, for example, take the original metal powders obtained by different technology of their preparation, which often determines the shape of the grains of powder. For example, the powders obtained by spray, have a spherical shape, the powder obtained by reduction of uncertain form, chemically - flocculent form. For more recesses having a dendritic surface, it is necessary to take powders dendritic form. Thus, the proposed method of obtaining the roughness on the surface of the diamond grains allows without making it difficult to obtain on the surface of the diamond grains of the recess (fossa etching) of the required size, in the required number of specified forms without significant reduction of their original strength. 1. The method of obtaining the roughness on the surface of the diamond grains, including mixing of diamond grains with a metal powder, heating the mixture and separation of the diamond grains from metal powders, characterized in that the heating of the mixture is carried out in vacuum at a temperature of 800-1100°C. 2. The method according to claim 1, characterized in that the metal powders take the powders of iron, Nickel, cobalt, manganese, chromium, and alloys and mixtures. 3. The method according to claim 1, characterized in that Department after heating the diamond grains from their metal powders exposed to acids. 4. The method according to claim 1, characterized in that the mixture of diamond grains and the metal powders are additionally injected powders which, when heated, it does not interact with the diamond grains.
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