Method for manufacturing optical devices and appropriated devices

FIELD: physics.

SUBSTANCE: invention is related to optical devices manufactured by method induced with additive of quantum well (QW) mixing. Method for manufacturing optical device, in which body from which this device is manufactured, contains at least one quantum well (QW), includes stages whereat mixing of doped material is caused with the said, at least, one quantum well, this doped material containing copper (Cu).

EFFECT: development of improved method for manufacturing optical devices, based on quantum well (QW) mixing induced with additive.

30 cl, 16 dwg

The technical field

The invention relates to a method of manufacturing an optical device, in particular but not exclusively, to the manufacture of integrated optical devices or optoelectronic devices, such as semiconductor optoelectronic devices, such as laser diodes, optical modulators, optical amplifiers, optical switches, optical detectors, and the like, the Invention also relates to an optoelectronic integrated circuits (OEIC) and photonic integrated circuits (pics)that contain the specified device.

The invention, in particular, but not exclusively, relates to a method of manufacturing an optical device using a new and improved method of induced admixture mixing of the quantum well (PCA).

The level of technology

In optical communication systems is highly desirable monolithic integration of different optical components on a single epitaxial layer. One of the main requirements for monolithic integration is to implement different forbidden energy bands in a single semiconductor epitaxial layer. For example, the coordinate matrix switch type 2×2 containing semiconductor optical amplifiers, passive waveguide couplers and modulators of electropolishing (EP), usually need three prohibited the military power zone. The working wavelength for switches, and hence the amplifier is usually equal to 1.55 μm, but for passive waveguides require a much more wide forbidden energy zone in order to minimize the absorption is distributed according to the waveguides of the light beam. In addition, the optimal forbidden energy absorption zone for EP-modulators approximately 20-50 nm shorter than the amplifier, in order to ensure low insertion loss and high attenuation factor. Patterns with multiple forbidden energy bands are also used in devices such as multi-wave sources in systems with seal wavelength (from the English. wavelength-division multiplexing, WDM) and photodetectors.

Currently, for these purposes, explores the variety of technologies. Although technology based on selective recrystallization, look promising, throughout the production process requires expensive installation, such as equipment chemical vapour deposition of ORGANOMETALLIC compounds (HOPPMAN), and two-dimensional structuring (i.e. the formation of the figure) of the energy gap is impossible. Other methods are based on the mixing of the quantum well (PCA).

Mixing of the quantum well (PCA) is what is carried out this way, which is promising from the point of view of providing a possible way to monolithic optoelectronic integration. PCA can be performed in the semiconductor materials of the III-V groups of the Periodic table, such as gallium-aluminum-arsenide (AlGaAs) or phosphide-arsenide, indium (InGaAsP), which can be grown on binary substrates, for example, of gallium arsenide (GaAs) or indium phosphide (InP). PCA changes the forbidden energy zone patterns directly after growing due to mutual diffusion of chemical elements of the quantum well (CB) and related barriers to obtaining alloy of the constituent components. The alloy has a forbidden energy zone, which is wider zone in the quantum well immediately after cultivation. Therefore, any optical radiation (light)generated in the quantum well, where PKA not happened, can pass through PKA or "mixed" area of the alloy, which is essentially transparent to the specified optical radiation.

In the literature it was reported about the different ways PCA. For example, PCA can be performed by high-temperature diffusion of elements such as zinc, in the semiconductor material containing CB.

PCA can also be performed by ion implantation of elements such as silicon, a semiconductor material with CB. This is mode implantable element creates point defects in the structure of the semiconductor material, moving across the semiconductor material, causing mixing in the structure of the quantum well at the stage of high-temperature annealing.

This technique PCA described in the article "Applications of Neutral Impurity Disordering in Fabricating Low-Loss Optical Waveguides and Integrated Waveguide Devices", Marsh et al, Optical and Quantum Electronics, 23, 1991, s-957, the contents of which are incorporated herein by this reference.

Inherent in these methods, the problem is that, although PKA changes (increases) forbidden energy zone of semiconductor material after cultivation, however, the residual diffusion or implanted dopant can result in significant losses due to high absorption of free carriers on these alloying and impurity elements.

Another reported method that provides mixing of the quantum well, is a pure diffusion of vacancies (BPD). When performing BPD upper covering layer of the semiconductor structure of III-V groups are usually made of GaAs or gallium-indium-arsenide (InGaAs). On the top layer of deposited film of silicon dioxide (SiO₂). Subsequent rapid thermal annealing of the semiconductor material causes the destruction of connections in a semiconductor alloy and the dissolution of the "sensitive" to silicon dioxide (SiO₂ions or atoms of gallium in silicon dioxide, is then in the upper layer remain vacancies. These vacancies then diffuse through the semiconductor structure, causing mixing of the layers, for example, in the structure of the quantum well.

Information about how BPD reported in the article "Quantitative Model for the Kinetics of Composition Intermixing in GaAs-AlGaAs Quantum Confined II" authored by Helmy et al, IEEE Journal of Selected Topics in Quantum Electronics, vol.4, No. 4, July/August 1998, pp.653-660, the contents of which are incorporated herein by reference.

The reported methods PCA and especially BPD have several disadvantages, namely, for example, the temperature at which gallium is out due to back diffusion of the semiconductor material film of silicon dioxide (SiO₂).

The task of the at least one aspect of the present invention is to solve or at least partial solution of at least one of the above mentioned disadvantages/difficulties of the prior art.

Another object of the invention is to provide an improved method of manufacturing an optical device using an improved method PCA.

Disclosure of inventions

According to the first aspect of the present invention, a method for manufacturing an optical device, and the body of the device ("device " body portion"), made this device comprises at least one quantum hole, including the steps that cause the mixing of impurity material with at least one quantum well, when this impurity material at least contains copper (Cu).

The impurity material may essentially contain copper or its alloy.

Unexpectedly, it was found that copper diffuses almost 10⁶times faster than earlier impurities such as zinc.

Preferably the method comprises the preliminary step of placing at or near the body of the device layer containing the impurity material.

In the first variant of the invention, the impurity material may enter into the composition of the material carrier. The carrier may be a dielectric material such as silicon dioxide (SiO₂) or aluminum oxide (Al₂About₃). In this case, the above-mentioned layer may be deposited directly on the surface of the body of the device, for example, by ion sputtering.

In this first embodiment, the above-mentioned layer can be precipitated by installing a diode or magnetron ion sputtering.

In the second embodiment, the above-mentioned layer may include a layer of impurity material which may be deposited near the surface of the body of the device separation layer. The separating layer may have a dielectric material, such as silicon dioxide or aluminum oxide (Al₂O₃).

In the above-mentioned layer may be deposited additional layer aprimarily dielectric layer.

In this second embodiment, the above-mentioned layer may be deposited using ion sputtering, and the separating layer/an additional layer may be deposited using ion sputtering or other methods, for example plasmodiophoromycota chemical vapour deposition (SHOPP).

Preferably, the method of manufacture also includes advanced stages ensure the availability of substrates and cultivation on the substrate of the first optical layer of the shell, the guide layer of the core, containing at least one quantum hole (CB), the second optical layer shell and, optionally, a contact layer.

The first optical layer, a guide layer of the core, the second optical layer and the contact layer can be grown by molecular beam epitaxy (IPE) or chemical vapor deposition, ORGANOMETALLIC compounds (HOPPMAN).

In one of the modifications of the first variant of implementation mentioned before mixing layer can be removed from the body of the device.

Preferably the mixing of impurity material with said at least one quantum well (CB) is called by heating the body of the device to high temperature for a specified time.

Fever may be in diapazonom 700° With up to 900°and the specified time may range from 30 seconds to 300 seconds.

The step of heating the body of the device to high temperature may include the step of annealing the body of the device, which causes the diffusion of the impurity material in said at least one quantum pit and back diffusion of ions or atoms of the quantum wells in the carrier material or the separation layer.

According to the second aspect of the invention, a method for manufacturing an optical device, and the body of the device from which manufactured the device comprises at least one quantum pit, including the stage at which cause diffusion of the first material in the body of the device, as well as the reverse diffusion of the material (e.g., ions or atoms) of the body of the device in the second material.

Therefore, this aspect is advantageous combination of induced admixture of mixed and pure mixing.

In one embodiment, the first material may be doped material containing copper (Cu), and the second material may be a dielectric material such as silicon dioxide (SiO₂) or aluminum oxide (Al₂About₃).

According to a third aspect of the invention, a method for manufacturing an optical device, and the body of the device from which izgotavlivaet the device, contains at least one quantum hole, comprising the steps are formed on the surface of the body of the device drawing from many areas of the impurity material, and at least two of these areas are separated from the surface by different distances, and cause mixing of the impurity material mentioned many areas with the said at least one quantum well in order to configure the forbidden energy zone mentioned at least one mixed quantum wells mentioned in at least two areas on different values.

Preferably the impurity material at least contains copper (Cu).

According to a fourth aspect of the invention proposed an optical device manufactured by the method according to any of the first, second or third aspects of the present invention.

The body of the device may be made in the system of semiconductor materials of the III-V groups.

System semiconductor materials of the III-V groups may be a system on the basis of gallium arsenide (GaAs), and it can operate at the wavelength (wavelengths) being between 600 nm and 1300 nm. Alternatively, the system of semiconductor materials of the III-V groups may be a system on the basis of indium phosphide, and it can operate at the wavelength (wavelengths) being between 1200 nm and 1700 nm. The body of the mouth of the STS can be performed, at least partially, from a gallium-aluminum-arsenide (AlGaAs), gallium-indium-arsenide (InGaAs), a phosphide of gallium, indium (InGaAsP), indium arsenide-gallium-aluminum (InGaAlAs) and/or indium phosphide-arsenide-aluminum (InGaAlP).

The body of the device may include a substrate on which are provided a first optical layer, a guide layer of the core, the second optical layer and, optionally, a contact layer.

At least one quantum well (CB) may be provided in the guiding layer of the core.

Alternative or additionally, at least one quantum well can be provided in one of the layers of the shell, or both. It should be noted that in the latter case, it is better to set (adjust) the refractive index than the forbidden energy zone of the layer(s) of the shell.

Guide layer core immediately after cultivation may have a smaller forbidden energy zone and a higher refractive index compared with the first and second optical layers.

According to the fifth aspect of the present invention proposed an optical integrated circuit, an optoelectronic integrated circuit (OEIC) or photonic integrated circuits (pics), containing at least one optical device according to a fourth aspect of the present invention.

According to the about the sixth aspect of the present invention proposed the body of the device ("sample"), used in the method according to the first or second aspect of the present invention.

According to the seventh aspect of the invention proposed a semiconductor wafer of a material containing at least one body of the device used according to any of the first, second or third aspects of the present invention.

Brief description of drawings

Embodiments of the present invention is further explained only as an example with reference to the accompanying drawings, on which:

Figure 1(a)-(f) - schematic drawing in lateral projection of the sequence of manufacturing steps of a method of manufacturing an optical device according to the first variant implementation of the present invention;

Figure 2 - schematic illustration of the lateral projection of the production step of the method of manufacturing the optical device according to the second variant of implementation of the present invention;

Figure 3 - schematic illustration of the lateral projection of the production step of the method of manufacturing the optical device according to the third variant of implementation of the present invention;

4 is a schematic illustration of the lateral projection of the production step of the method of manufacturing the optical device according to the fourth variant of implementation of the present invention;

Phi is .5 - the shift of the energy gap depending on the annealing temperature for the first samples according to a variant embodiment of the invention;

6 is a shift of the energy gap depending on the annealing temperature for the second sample according to a variant implementation of the present invention;

Fig.7 - shift of the energy gap depending on the annealing temperature for the third and fourth samples according to a variant implementation of the present invention;

Fig - shift of the energy gap depending on the annealing temperature for a fifth of the samples according to a variant implementation of the present invention;

Fig.9 - shift of the energy gap depending on the annealing temperature for six samples according to a variant implementation of the present invention;

Figure 10 - the shift of the energy gap depending on the annealing temperature for the seventh samples according to a variant embodiment of the invention;

11(a) and (b) - account of ions depending on the depth of the samples according to a variant implementation of the present invention;

Fig account of ions/atoms depending on the depth of the samples according to a variant implementation of the present invention;

Fig account of ions/atoms depending on the depth for the samples under option domestic the present invention;

Fig - shift of the energy gap depending on the annealing temperature for the samples according to the eighth variant of implementation of the present invention;

Fig - shift of the energy gap depending on the annealing temperature for the eight samples according to the ninth variant of implementation of the present invention; and

Fig - shift of the energy gap depending on the annealing temperature for the ninth samples according to the tenth variant of implementation of the present invention.

Detailed description of drawings

First, with reference to Figure 1(a)-(f) illustrate the method of manufacturing the optical device according to the first variant embodiment of the invention. The body of the device, which in General is designated as 5A and made this device contains at least one structure 10A of the quantum well (CB). The above-mentioned method includes a stage on which cause mixing of the impurity material with at least one quantum hole 10A, and the impurity material contains copper (Cu), see Figure 1(e). In this embodiment, the impurity material essentially contains copper or its alloy. Discovered that copper diffuses approximately 10⁶times faster than the previously used, impurities such as zinc (Zn).

As you can see in figure 1(d), which is about includes a preliminary stage of deposition on or near the body 5A of the device layer 15A, containing impurity material.

In this embodiment, the impurity material is included in the composition of the material carrier. The carrier material in this embodiment is a dielectric material such as silicon dioxide (SiO₂) or aluminum oxide (Al₂About₃). In this case, the layer 15A are precipitated directly onto the surface of the body 5A of the device. Layer 15A is advisable to besiege using install diode (i.e. using two electrodes) or magnetron ion sputtering (not shown).

The method begins with the step of ensuring the availability of the substrate 20A, and the cultivation of the substrate 20A of the first optical layer 25A of the shell, the guide layer 30A of the core, comprising at least one structure 10A of the quantum well, the second optical layer 35A shell and, optionally, a contact layer 40A. In the substrate 20A is usually injected alloying impurity of n⁺, while in the first optical layer 25A shell enter alloying impurity of n-type guide layer 30A of the core is essentially a layer of intrinsic electrical conductivity, the second optical layer 35A shell enter alloying impurity of p-type, and the contact layers 40A - R⁺.

It should be noted that the first optical layer 25A of the shell, the guide layer 30A of the core, the second optical layer is 35A shell and a contact layer 40A can be grown using any appropriate method of growing, such as molecular beam epitaxy (IPE) or chemical vapor deposition, ORGANOMETALLIC compounds (HOPPMAN).

Referring to Figure 1(e), mixing of impurity material 15A with at least one quantum pit 10A cause due to heating of the body 5A of the device to high temperature for a specified time. Usually elevated temperature is in the range from 700°With up to 950°and the specified time is in the range from 30 seconds to 300 seconds. The heat of the body 5A of the device to high temperature in this embodiment includes annealing the body 5A of the device, which causes the diffusion of copper in the above-mentioned at least one quantum hole 10A, and reverse diffusion of ions or atoms, for example, gallium mentioned at least one quantum holes 10A in the carrier material 15A. Thus, this variant implementation combines induced admixture of mixed and pure mixing the aforementioned at least one quantum well 10A.

In the end, the method according to the first variant of implementation includes the following steps:

(a) providing the body 5A of the device (see Figure 1(a));

(b) deposition of a layer of silicon dioxide using plasmodiophoromycota chemical vapour deposition (SHOPP) and the application of centrifuge is a Finance a layer of photoresist on PSHOP-layer of silicon oxide (see Figure 1(b));

(c) forming a pattern in the photoresist and PSHOP layer of silicon dioxide by a method of lithography, for example, etching using HF or dry etching using C₂F₆(see Figure 1(C));

(d) deposition on the body 5A of the device formed by the pattern layer 15A containing impurity material (see Figure 1(d));

(e) rapid thermal annealing of the body 5A of the device at a given temperature for a specified time in order to mix the said at least one quantum holes 10A in selected areas formed with a pattern (see Figure 1(e)); and

(f) removing the various layers of the body 5A of the device and appropriate formation of the metallization on the body 5A of the device for forming electrical contacts with them (see Figure 1(f)).

Now with reference to Figure 2 illustrating the method of manufacturing the optical device according to the second variant embodiment of the invention. This second variant of implementation differs from the above-described first variant of realization of the fact that at the stage according to Figure 1(d) instead of the deposition of a single layer of material 15A containing a mixing material near the body surface 5b on the separating layer 16b precipitated layer 15b containing the layer of doped material. The separating layer 16b preferably includes a dielectric material such as oxide, PU glue, which I (SiO ₂) or aluminum oxide (Al₂O₃). On the layer 15b precipitated additional layer 17b, for example, additional dielectric layer. In this second embodiment, the layer 15b is preferably precipitated using ion sputtering, and the separation layer 16b and/or the additional layer 17b is preferably precipitated by ion sputtering or by using PSHOP.

Now with reference to Figure 3 illustrating the method of manufacturing the optical device according to the third variant of implementation of the present invention. The method according to the third variant of implementation is similar to the method according to the first variant of implementation, with the exception that after the stage of figure 1(d) with body 5C devices remove various layers, including layer 15C, and on the surface of the body 5C devices beset PSHOP layer of silicon dioxide. Body 5C devices are then subjected to rapid thermal annealing, as in figure 1(e). Unexpectedly, it was found that mixing the aforementioned at least one quantum well 10C due to the mixing of the material (e.g. copper) is still happening, and in the embodiment according to Figure 3, although the layer 15C has already been removed before the step of rapid thermal annealing.

Now with reference to Figure 4 illustrates the lateral projection of the production step of the method of manufacturing the optical device according to che the fourth variant of implementation of the present invention. As can be seen in Figure 4, in this embodiment, the 5d body of the device is undergoing a re-formation of a pattern with many of PSHOP-layers of silicon dioxide to provide a stepped pattern or, in other words, the pattern of the silicon dioxide. A template containing an open area of the body surface 5d of the device without PSHOP layer of silicon dioxide, is shown in Figure 4. On top of layered PSHOP pattern of the silicon oxide ion sputtering precipitated layer 15d containing impurity material. In this embodiment, the layer 15d contains a carrier material, such as silicon dioxide containing impurity material such as copper. Sebanibane thus the 5d body is then subjected to rapid thermal annealing according to Figure 1(e) in order to access many areas 45d, 50d, 55d, 60d, 65d mixed quantum holes in the body 5d of the device, with each region are intermixed quantum wells configured in different forbidden energy zone, as induced copper impurity material mixing is different in each area are intermixed quantum wells, since each region 45d through 65d are intermixed quantum wells separated from the layer 15d different number of stepped layers of PSHOP is silicon dioxide.

So, how induced admixture mixing of the quantum well Yes according the this invention may use a film of silicon dioxide with an additive of copper, to enter a regulated amount of impurities in the semiconductor. It was found that copper is particularly effective admixture for induced impurity disordering. The reason for this is that copper is in the interstices, and vacant sites and navigates between them using the "jump". It has a very high diffusion coefficient, and this means that the mixing occurs very quickly, and therefore, the copper rapidly diffuses, leaving a low residual concentration in the mixed layer. Moreover, with the inclusion of copper in the composition of the top layer of SiO₂there is an effect of back diffusion of elements of III group in the upper layer during high temperature annealing, resulting generated additional vacancies elements of III group, which further increase the mixing speed. This technique has proved an effective means of achieving large differential shifts of the energy gap in a wide range of systems semiconductor materials of the III-V groups, and this technique can be used to provide low passive loss section in some monolithic integrated devices, including high power lasers with different mirrors, lasers with advanced resonator and matrix coordinate lane is the switch.

Only a very small amount of copper (about 1 monolayer) is required in order to cause mixing of the quantum well. Unlikely to be desirable to spray the copper layer directly on the surface of the semiconductor, because the local concentration of copper is very high, and may be due to the high concentration of the effects of nonlinear diffusion, such as pickaway mode and education clusters (clusters). In addition, the surface of the semiconductor during the annealing must be protected with a dielectric top layer, and the conclusion inside SiO₂gives additional benefits due to the promotion of the creation of vacancies elements of III group due to reverse diffusion of atoms.

According to the method in accordance with the present invention, copper can be introduced into the semiconductor by diffusion from a layer of silicon dioxide doped with copper. Layer precipitated using system diode or magnetron ion sputtering, and it can be uniformly doped with simultaneous ion sputtering of copper and SiO₂(the first version of the implementation), or copper can be entered in a single layer net, separated from the surface of a semiconductor thin film of SiO₂(the second variant of implementation). The last solution, apparently, provides better control of the level of implementation of copper in unnatural semiconductors is. Usually precipitated by a thin layer (20-2000 nm) undoped silicon dioxide, and then approximately 1-3 monolayer of copper. This structure then complete the subsequent deposition of silicon dioxide without dopant. The sample is then annealed at temperatures in the range from 700°With up to 950°C for from 30 s to 300 s depending on the material. At the stage of annealing the copper diffuses from the layer of silicon dioxide in the semiconductor. Copper has a very high diffusion coefficient in the semiconductor, and this means that the mixing is fast. Thus copper rapidly diffuses into the body of the device, leaving a low residual concentration in the mixed layer.

Below are examples of experimental samples produced by the methods that match the characteristics described above of the embodiments from the first to the third.

All samples consisted of a multilayer laser p-i-n structures, fully grown molecular-beam epitaxy (IPE) or by epitaxy from the vapor phase ORGANOMETALLIC compound (EPPOS) on substrates of GaAs or InP. Epitaxial layers usually contain active region having one or more quantum wells (CB) thick, typically 3-10 nm inside the waveguide core with a larger forbidden energy zone thickness 250-1000 nm, which was OCD is the wife of p-doped and n-doped layers of the shell. All the structures were covered heavily p-alloyed (1×10¹⁹cm^-3the contact layer with the usual thickness of 100-300 nm.

EXAMPLE 1

The original sample gave the following results. Copper was introduced into the matrix of SiO₂with the usual thickness of 200 nm by simultaneous ion sputtering of copper and SiO₂. This was achieved by reducing the height of the grounded screen around the target, so that the portion of copper carrier plate target was subjected to erosion. The degree of mixing of the quantum well achieved with the help of this method was determined by measuring the energy change of the photoluminescence (PL) after annealing. In all cases, it was compared with a control sample, covered PSHOP-SiO₂with all anneals were performed for 60 seconds, unless otherwise specified duration.

Figure 5 shows the initial results obtained in grown using APFSOS samples InGaAs-InGaAsP emitting at 1550 nm, covered PSHOP-SiO₂and applied to ion sputtering of Cu:SiO₂. Although covered PSHOP-SiO₂the samples show initial shifts of the energy gap at temperatures above 650°With, however, a significant shift of the energy gap obtained in the material covered Cu:SiO₂at temperatures of about 100°below that allowed by the teaching differential (i.e. different) shifts the energy gap value of 80 MeV at temperatures of annealing 650-675°C.

EXAMPLE 2

A similar version of the implementation was carried out in systems with materials InGaAs-InAlGaAs, emitting at 1550 nm, as shown in Fig.6, for material grown by the method of the IPE. This material was compared to InGaAsP the best thermal stability, as evidenced by negligible shifts obtained in the presence of only PSHOP-SiO₂. However, when using Cu:SiO₂initial results were obtained at 600°and increased by more than 100 MeV at the annealing temperature of 700°C.

EXAMPLES 3 and 4

The shifts of the energy gap similar values were also obtained, as can be seen from Fig.7, ion sputtering of Cu films:SiO₂in structures with multiple quantum wells (MCA) GaAs-AlGaAs (850-860 nm) and GalnP-AlGalnP (670 nm). In this case, covered PSHOP-SiO₂the samples again gave negligible shifts of the energy gap in the used temperature range, and for clarity figure 7 they are not specified. In the whole temperature range is negligibly small shifts were obtained for both covered PSHOP-SiO₂materials.

EXAMPLES 5 and 6

Studies have shown that large shifts of the energy gap can also be obtained after removing received the CSOs ion sputtering of the upper layer Cu:SiO ₂and replace it on PSHOP-SiO₂before high temperature annealing. Typical effect observed in InGaAs-InAlGaAs shown in Fig. Studies using measurements of mass spectroscopy secondary ion (SIMS) and the experiments on the ion sputtering showed that the predominant mechanism for the increased shift was the introduction of significant levels of Cu in the surface of the semiconductor at the initial stages of ion sputtering. This is shown in Figure 9, which illustrates the shift of the energy gap obtained in the InAlGaAs material on samples covered with sprayed SiO₂and Cu:SiO₂in comparison with the samples covered PSHOP-SiO₂and non-alloy sprayed SiO₂. It shows a very similar behavior PSHOP-SiO₂and non-alloy sprayed SiO₂, while significant differential shift (>100 nm) were obtained using powdered Cu:SiO₂.

EXAMPLE 7

Suppression of mixing was possible due to the protection of the surface of the sample during ion sputtering layers PSHOP-SiO₂while the degree of suppression was greater for thicker coatings. This is shown in Figure 10 for InGaAs-InGaAsP. This observation suggests that Cu diffuses through these thin layers of SiO₂during high temperature annealing, causing significant the major concentration in the upper layers of the sample. This method of deposition should provide a higher degree of control over the concentration of Cu, and it has proven its suitability to obtain a range of different forbidden energy bands using a single stage ion sputtering and annealing at the appropriate sabonervnih sample. It also, apparently, improves the quality of the processed material, presumably due to the decrease in the concentration of si in the active region of the semiconductor. As shown in Figure 10, the complete suppression of mixing is possible using a relatively thick layer of photoresist, and the shifts are protected by the photoresist material were identical with shifts received for covered PSHOP-SiO₂material. This improvement suppression can be attributed to both the increased thickness of the diffusion barrier, and a reduction in the rate of diffusion of copper in the photoresist.

Measuring mass spectroscopy secondary ion (SIMS) and Rutherford backscattering (POP) were also used to determine the atomic composition of the films of SiO₂and to measure the degree of reverse diffusion of elements of III group in them. For both materials InGaAsP and InAlGaAs they showed obvious signs of reverse diffusion as In and Ga from the surface of a semiconductor in the deposited ion spray the top layer of SiO₂:Cu at temperatures when in the upper layer of PSHOP-SiO₂reverse diffusion was not observed. This is illustrated for the material InGaAsP multiple quantum wells (MCA) figure 11 and can be explained by the reduced activation temperature reverse diffusion in Cu doped material because of the increased density of point defects caused by the diffusion of copper.

11 illustrates the profiles of SIMS in MCA-InGaAsP material covered as PSHOP-SiO₂and sprayed Cu:SiO₂after annealing at a temperature of 680°C. Reverse diffusion of In and Ga is clearly observed for the material with the coating deposited by ion sputtering, but it is not manifested in the upper layer of PSHOP-SiO₂.

Subsequent measurements have shown that the distribution of copper in the film at an average concentration of 1×10²¹cm^-3and a similar density was observed on the surface of a semiconductor with a sharp decline in concentrations up to 1×10¹⁸cm^-3at a depth of 300 μm, as shown in Fig.

Fig shows the SIMS profile geotagging MCA-sample of InAlGaAs after removal of the applied ion spray coating Cu:SiO₂. The Cu concentration decreases sharply to limit noise 5×10¹⁷cm^-3at a depth of about 300 nm.

After annealing, there is a considerable diffusion of copper was obtained concentration 1×10¹⁸cm throughout the layer and the waveguide region at a depth of more than 1 μm, as shown in Fig.

Fig shows the SIMS profile in the sample InAlGaAs after annealing at a temperature of 700°and removing the top layer Cu:SiO₂.

In some examples, the ion sputtering of Cu:SiO₂it was made in the first system diode sputtering from a single target using a process gas Ar:O₂(9:1) and when the spray pressure 2×10^-3mbar power radio frequency 110 watts, which corresponds to the internal bias constant field of 1 kV. The dependence induced by copper mixing process from the conditions of ion sputtering was investigated in the early stages of development. Some initial results indicated a nearly linear dependence of the shift from film thickness, however, there were a number of conflicting first message, and later studies showed that there is a small dependence on the thickness of the applied ion sputtering layer. This fact, apparently, according to the mixing observed after removal of the applied ion sputtering of the upper layer, and this suggests that this effect is mainly regulated early stages of the growing film during which copper is directly embedded in the semiconductor. Apparently, there is neznacit is supplemented flax dependence on RF power ion sputtering for power values below 110 volts (because of the possibility of damage to the target SiO ₂research in higher capacities was not possible), which is not particularly surprising given the significantly higher output ion sputtering of copper compared with SiO₂. However, it was observed a strong dependence of the rate (intensity) PKA from pressure ion sputtering. But it is likely that this is a consequence of the simultaneous deposition of Cu:SiO₂due to the increasing thickness of the screen high voltage at reduced pressure, and this fact prevents ion sputtering in the field of grounded screen and causes erosion of the carrier plate. It was also investigated using pure Ar as a gas ion sputtering, but without any noticeable effect on the mixing rate.

EXAMPLE 8

In other samples was used in the second ion sputtering, which was used for the simultaneous spraying of SiO₂and Cu with change screen height ground. When using ion sputtering conditions, basically the same as described above, it is possible to obtain large differential shifts of the energy gap in comparison with PSHOP-SiO₂. This is shown for InAlGaAs on Fig, which also shows for comparison the shift of the energy gap obtained in the first system ion spray the Oia. Fig shows the shifts of the fluorescence obtained for InAlGaAs, covered PSHOP-SiO₂, sprayed SiO₂and Cu:SiO₂incurred in the second system, ion sputtering, and sprayed Cu:SiO₂incurred in the first system ion sputtering. This figure shows that in the first case, the copper was not implemented, and shifts the energy gap equal to the zones obtained with PSHOP-SiO₂however , in the case of deliberate introduction of copper were obtained large differential shifts. The degree of shift of the energy gap was slightly smaller than the degree in the first system, ion sputtering, and this can explain the lower level of the introduction of copper, probably due to the reduced degree of openness (availability) of the carrier plate to the influence of plasma spray.

EXAMPLE 9

Below is a description of the third alternative implementation using a layered approach. As indicated above, this approach involves the incorporation of copper into a thin film near the surface of the semiconductor, but is separated from this surface a thin layer deposited by ion sputtering SiO₂. Layers of SiO₂were caused by ion sputtering using the standard conditions described above, with layers of copper were deposited under the same pressure, but with a lower RF m is Sestu 25 watts to reduce the speed of ion sputtering and improve the degree of control the concentration of the introduced copper. Fig shows some typical results in InAlGaAs when using this method, in particular the shift of the energy gap obtained when the multilayer deposition of SiO₂/Cu/SiO₂in InAlGaAs, where the second number indicates the deposition time for the layer of copper, and the first and third values indicate the thickness of the surrounding layers of SiO₂. This suggests that a thin layer of copper (2-3 monolayer), separated by an interval of 200 nm from the surface of a semiconductor, can give large and, apparently, reaching saturation shifts of the energy gap in comparison with the samples covered PSHOP-SiO₂. The increase in the film thickness of copper, as it turns out, does not provide an obvious increase in shift differential. However, the use of a layer of copper of the same thickness, but with doubled to 400 nm intervals increases the temperature of the activation process PKA, resulting in 775°With shift differential is approximately half of the shift at the interval equal to 200 nm. Further optimization of this method should provide a "balancing" the spacing and thickness of the copper film in order to provide a sufficient introduction of impurities to achieve a large differential shift of the energy gap with a minimum residual concentration of copper.

EXAMPLE 10

Opisyvaet the th above approach was also successfully applied in the material of the quantum well InGaAs-GaAs, sluchayem at 980 nm, as shown in Fig. Fig shows fluorescence-shifts in sluchayem at 980 nm the material for covering the upper layer of PSHOP-SiO₂and ion-sprayed layers of SiO₂/Cu/SiO₂varying thicknesses of the first layer of SiO₂. In this example, it is obvious that the differential shift of the forbidden zone is greatest for those layers, in which the copper is directly deposited on the sample surface, and decreases with increasing thickness specifies the interval (separation) layer of SiO₂. The extent of increasing the thickness of the separation layer is limited to a low thermal resistance material, which in turn limits the value achievable differential shift of the energy gap. Differential shift can be increased by simply increasing the time of annealing, which will sharply increase the mixing in the doped copper films, while little affecting the layers PSHOP-SiO₂.

It should be noted that the described above embodiments of the invention are given only as examples, and they do not imply any limitation of the scope of the present invention. In particular, it should be understood that in the disclosed here ways to exercise, you can make changes within the scope of the invention.

1. A method of manufacturing the optical device is TBA, moreover, the body of the device from which manufactured this device comprises at least one quantum hole (CB), including stages, which cause mixing of the impurity material with said at least one quantum well, and this impurity material contains copper (Cu).

2. The method according to claim 1, wherein the impurity material consists of copper or a copper alloy.

3. The method according to claim 1, which includes a preliminary stage of deposition on the body of the device or in the vicinity of the layer containing the impurity material.

4. The method according to claim 3, in which the impurity material is injected with a material carrier.

5. The method according to claim 4, in which the carrier material is a dielectric material.

6. The method according to claim 4, in which the said layer is precipitated directly on the surface of the body of the device.

7. The method according to claim 6 in which the said layer is precipitated by setting the ion sputtering.

8. The method according to claim 3 in which the said layer is a layer of doped material, which is deposited near the surface of the body of the device separation layer.

9. The method according to claim 8, in which the separating layer contains a dielectric material.

10. The method of claim 8 in which the said layer of doped material precipitated additional dielectric layer by setting the ion sputtering.

11. The method according to the .8, in which the said layer of doped material and the separating layer precipitated by setting the ion sputtering.

12. The method according to claim 3, in which the body of the device includes a substrate, a first optical layer, a guide layer core and the second optical layer, and, optionally, a contact layer, the method also includes advanced stages ensure the availability of substrate and growing on this substrate, the first optical layer of the shell, the guide layer of the core, containing the mentioned at least one quantum hole (CB), the second optical layer shell and, optionally, a contact layer.

13. The method according to item 12, in which the first optical layer, a guide layer of the core, the second optical layer and contact layer are grown by molecular beam epitaxy (IPE) or chemical vapor deposition, ORGANOMETALLIC compounds (HOPPMAN).

14. The method according to claim 4, in which, prior to mixing the above-mentioned layer is removed from the body of the device.

15. The method according to claim 1, in which cause mixing of the impurity material with said at least one quantum well (CB) by heating the body of the device to high temperature for a specified time.

16. The method according to item 15, in which the high temperature h is located in the range from 700 to 950° With, and the specified time is in the range from 30 to 300 C.

17. The method according to item 15, in which the step of heating the body of the device to high temperature includes annealing the body of the device, which causes the diffusion of the impurity material in said at least one quantum pit and back diffusion of ions or atoms of the above-mentioned at least one quantum well.

18. The method according to any one of claims 1 to 17, which includes a stage on which the cause mentioned diffusion of impurity material into the body of the device, as well as the reverse diffusion of the material of the body of the device in the second material.

19. The method according to p, in which the second material is a dielectric material.

20. The method according to any one of claims 1 to 19, which includes the steps, which form on the surface of the body of the device drawing from many areas of the impurity material, and at least two of these areas impurity material is separated from said surface by different distances; cause mixing of the impurity material mentioned many areas with the said at least one quantum well so as to adjust the width of the energy gap of at least one mixed quantum wells in at least two areas on different values.

21. The optical device manufactured by the method according to mu the mu one of claims 1 to 20.

22. The optical device according to item 21, which is integral optical device, or an optoelectronic device.

23. The optical device according to item 21, in which the body of the device is made in the system of semiconductor materials of the III-V groups.

24. The optical device according to item 23, in which the system of semiconductor materials of the III-V groups is a system based on gallium arsenide (GaAs) and acts on the length(s) waves(s), essentially in the range from 600 to 1300 nm.

25. The optical device according to item 23, in which the system of semiconductor materials of the III-V groups is a system based on indium phosphide and acts on the length(s) wave(s) being in the range from 1200 to 1700 nm.

26. The optical device according to item 23, in which the body of the device is made at least partially from a gallium-aluminum-arsenide (AlGaAs), gallium-indium-arsenide (InGaAs), a phosphide of gallium, indium (InGaAsP), indium arsenide-gallium-aluminum (InGaAlAs) and/or indium phosphide-arsenide-aluminum (InGaAlP).

27. The optical device according to any one of p-26, in which the body of the device includes a substrate on which the first optical layer, a guide layer core and the second optical layer, and, optionally, a contact layer.

28. The optical device according to item 27, in which at least one quantum well (CB) made in the guiding layer is ardavin.

29. The optical device according to p, in which, instead of, or additionally, at least one quantum well (CB) is made in one or both layers of the shell.

30. Optical integrated circuit containing at least one optical device according to any one of p-29.