Thick-film contact of silicon photoelectric converter and its manufacturing process |
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IPC classes for russian patent Thick-film contact of silicon photoelectric converter and its manufacturing process (RU 2303830):
      
 Method for assembling photodetector device for infrared spectral region / 2301478
Proposed method for assembling photodetector device components makes use of universal polymeric material incorporating universal properties of optical and structural adhesive, sealing and encapsulating compounds based on polyorganosiloxane urethanes, and is characterized in fast curing taking maximum 1.5 h at desired adhesive strength, optical transparence, flexibility, minimal toxicity, and ability of its use in all main adhesive operations in assembling photodetector devices due to introduction of silicone triole and adduct of silicone oligodiol and curing catalyst toluylene diisocyanate in the amount of 0.09 - 0.12 % relative to silicone triole.
 Method for enhancing sensitivity of photoelectric displacement-to-number transducer / 2301477
Coherent flat-wavefront beam is passed through photoelectric displacement-to-code transducer made in the form of p-n junction along single optical axis and directed to transducer plane. Diffraction microrelief is formed on photocell surface, its parameters and those of light beam being tightly interrelated by equation f = 2λ/b, where f is angle of light beam divergence in direction of point of observation; λ is light beam wavelength; b is diffraction microrelief slot width.
 Method for assembling lead chalcogenide based infrared-radiation photodetectors / 2298258
Proposed method for assembling radio components of infrared radiation photodetectors built around lead chalcogenide photoresistors and designed to operate in spectral region of 1 to 5 μm involves use of quick-sealing polymeric adhesive polyorganosiloxane urethanes under fast curing conditions for assembling infrared-radiation photodetectors from different components based on lead chalcogenide photoresistors by gluing them together due to introduction of polymerization reaction catalyst (tin diethyl caprylate) in silicone triol and organic diisocyanate (toluylene diisocyanate) compound.
 Method for making a photo-transformer / 2292610
Method for making photo-transformer on semiconductor plate with structure n-Ge substrate, n-GaAs buffer layer, n-GaAs base layer, p-GaAs emitter layer, p+-GaAlAs wide-zone layer, p+-GaAs contact layer, includes spraying contact metallization layer onto back of plate, forming protective photo-resist layer, growing of back contact by electro-chemical sedimentation of silver, removal of photo-resist, serial spraying of contact metallization layers of chromium 200÷400Å thick, of palladium 200÷500Å thick, of silver 500÷1500Å thick, creation of photo-resistive mask with pattern of contacts, growing of contact by electro-chemical sedimentation of silver, removal of photo-resist, etching together of sprayed layers of contact metallization by means of ion-beam etching, thermal processing of plate, creation of photo-resistive mask with pattern of windows along perimeter of photo-transformer, etching of gallium arsenide layers up to germanium layer, removal of photo-resist, etching together of layers of p+-GaAs layer beyond limits of contact areas and application of anti-reflecting cover. After spraying of contact metallization layer onto back, thermal processing of plate is performed and sprayed serially are contact metallization layers of chromium at temperature of 300÷350Å, palladium and silver at temperature of 200÷250Å. After removal of photo-resistive mask with contact pattern, layers of silver and palladium are etched together by means of ion-beam etching up to layer of chromium, further layer of chromium is removed in water solution of hydrochloric acid, and after etching of gallium arsenide layers up to germanium substrate and removal of photo-resist, p+-GaAs layer is etched together beyond limits of contact areas in water solution of lemon acid, lemon-acidic potassium and hydrogen peroxide at temperature of 40÷50°C.
Silicon-polymer photoelectric module and its manufacturing process / 2292097
Proposed photoelectric module built around single-crystalline silicon covered with polymeric film applied thereto by potential-static cycling method and characterized in conversion efficiency of 70-90% and wavelength band of 3·10-2 to 10-11 cm has its photoconverter made of single-crystalline silicon base material coated with polymeric film applied thereto by potential-static cycling method; this film is made of mixture of conducting polymers (polystannum aniline, polysilane aniline, and polyaniline), their proportion being as follows: 10 : 8 : 4. Invention specification also gives method for manufacturing this silicon-polymer module.
 Method for manufacturing optical devices / 2291519
Proposed method used for manufacturing optical and semiconductor optoelectronic devices, such as laser diodes, optical modulators, optical amplifiers, optical switching units, and optical detectors, involves device manufacture from part of chip of quantum potential well structure including stage of device chip treatment by plasma etching so as to produce elongated defects at least in part of layer covering part of device chip as stage in technology of mixing quantum potential wells for next stage of thermal annealing.
 Method for manufacturing solid-bodied photo-galvanic element with p-i-n structure / 2282272
Method includes applying photo-sensitive layer of organic semiconductor onto substrate of non-organic semiconductor and positioning of these between electrodes, one of which is semi-transparent. As non-organic semiconductor, n-type gallium arsenide is utilized (n-GaAs), and as organic semiconductor, thin layer of copper phthalocyanine of p-type is applied, between layer of n-type and layer of p-type, layer of native semiconductor is positioned (i-layer).
 Diamond base ultraviolet-range photovoltaic detector / 2270494
Proposed method for manufacturing photodetector depending for its operation on accumulation of charge in potential wells includes production of diamond substrate in the form of wafer and deposition of metal contacts thereon. Diamond wafers chosen for substrate has nitrogen concentration not over 2 · 1019 cm-3. Some of these contacts are placed at substrate potential and are common for external circuit, and potential wells are made under other contacts for accumulating supports of charge divided at metal-to-semiconductor barrier by maintaining "floating" potential across these contacts relative to substrate. Proposed photodetector is characterized in reduced probability of detecting signal from false source ranging between hundreds of nm and 50 nm with sensitivity threshold brought to physical one at λmax = 220 nm.
 Method for fabrication of semiconductor photoelectric generator / 2265915
Proposed method for fabricating photoelectric generator includes formation of p-n structures on semiconductor substrate, metal deposition, cutting of blank into matrices, their covering with clearing coat, and connection of current leads; multilayer n-p structure is formed by way of epitaxial growth of n and p layers on semiconductor substrate; prior to connection of current leads pulse voltage is applied to matrices and reverse-biased p-n junctions are broken down.
 Photoelectric converter manufacturing process / 2244986
Face side of semiconductor wafer whose structure has n-Ge substrate, n-GsAs buffer layer, n-GsAs base layer, p-GsAs emitter layer, p+-GsAlAs large-gap layer, and p+-GsAs contact layer is covered with silicon dioxide layer. Contact metallization layer is evaporated on rear side of wafer. Protective photoresist layer is formed on silicon dioxide layer and rear contact is built up by electrochemical deposition. Photoresist mask with windows is made upon removal of photoresist above contact regions of photoelectric converter. Then silicon dioxide layer is etched in windows and chromium metal contact layers are alternately evaporated. Upon producing photoresist mask with contact pattern contacts are built up by electrochemical deposition of silver and protective layer of nickel. Upon removal of photoresist evaporated layers of contact metallization are removed by ion-beam etching, wafers are given heat treatment, and photoresist mask with window pattern over photoelectric converter perimeter is formed. Then silicon dioxide layer is removed from windows and gallium arsenide layers are etched to expose germanium substrate. Silicon dioxide layer is removed upon removal of photoresist and antireflecting coating is applied upon etching p+-GsAs beyond contact regions.
 Semiconductor diode with a low contact resistance / 2166222
The invention relates to a device made from skodlivych semiconductors for work in the infrared wavelength range
 Thick-film contact of silicon photoelectric converter and its manufacturing process / 2303830
Proposed contact is built on thin silicon semiconductor wafer and has narrow current-carrying conductors in the form of current-collecting strips crossed at right angle by two wider current-carrying conductors in the form of current-collecting strips disposed symmetrically either side of longitudinal axis. Metal coat applied to 95-98% of surface area of narrow current-collecting strips can be disposed at distance of 0 - 3 mm from edges of wide current-collecting strips, that is, in immediate proximity of wide current-collecting strip edges. Invention specification also gives manufacturing process for this thick-film contact of silicon photoelectric converter.
Aluminum active material for silicon solar cells / 2303831
Aluminum active material used for producing silicon solar cells has aluminum powder, glass frit, and organic binder; active-material aluminum powder has spherical or flaked particles measuring maximum 20 μm in proportion of 3 : 1 to 100 : 1, respectively, and lead-boron-silicate glass based frit whose softening temperature is 280 to 400 °C.
 Radiation receiver / 2371810
Radiation receiver has a case made from ceramic material with an input window sealed to it. Inside the case on a metal-coated bottom, there is a crystal with photosensitive elements, connected to a contact pad. The contact pad is made in the wall of the case in form of a metal-coated step, and electrical leads, passing through the ceramic case, are in form of conductor strips.
 Front contact based on indium-zinc oxide for photoelectric device and method of making said contact / 2413333
Disclosed photoelectric device is made from amorphous silicon and has a front glass substrate, an active semiconductor film containing amorphous silicon, an electroconductive and virtually transparent front electrode lying at least between the front glass substrate and the active semiconductor film and a rear electrode. The active semiconductor film lies between the front electrode and the rear electrode. The front electrode has a conducting layer which contains indium-zinc oxide (IZO). The invention also discloses one more version of the photoelectric device and a method of making photoelectric devices.
 Contact shaping method for nanoheterostructure of photoelectric converter based on gallium arsenide / 2428766
Invention can be used in production technologies of ohmic contact systems to photoelectric converters (PC) with high operating characteristics and namely the invention refers to formation of contacts to GaAs layers of n-type conductivity, which are front layers of the number of structures of concentrator PC, which are capable of effective conversion of incident radiation with capacity of 100-200 W/cm2. Contact formation method for nanoheterostructure of photoelectric converter involves pre-formation on surface of nanoheterostructure of photoelectric converter based on gallium arsenide of electron conductivity of topology of photo-sensitive areas by photolithography with the use of mask from upper photoresist layer and lower non-photosensitive resist layer, or mask from photoresist with profile of mask elements, which has broadening from surface of nanoheterostructure of photoelectric converter. Then, cleaning of mask-free surface of nanoheterostructure of photoelectric converter, subsequent sputtering of eutectic gold-germanium alloy layer 10-100 nm thick, nickel layer 10-20 nm thick and silver layer, and further removal of photresist and annealing of contact is performed.
 Front contact with high-work function tco for use in photovoltaic device and method of making said contact / 2435250
Front contact used in the photovoltaic device according to the invention has an active semiconductor film. The front contact comprises: a front glass substrate; a first film of an essentially transparent conductive oxide (TCO); a second film of an essentially transparent conductive oxide (TCO), having a high work function, wherein the work function of the second TCO film is higher than that of the first TCO; wherein the first TCO film lies between the glass substrate and the second TCO film. The second TCO film, having a higher work function, lies in an essentially solid layer over the first TCO film and is in contact with it such that the first TCO film lies between the first TCO film and uppermost area of the semiconductor film of the photovoltaic device and is in contact with them; and where the first TCO film is more conductive than the second TCO film. The invention also discloses a photovoltaic device and a method of making said device.
 Front electrode with layer of thin metal film and high-work function buffer layer for use in photovoltaic device and production method thereof / 2435251
Disclosed photovoltaic device has a front glass substrate; an active semiconductor film; an electrically conducting and essentially transparent structure of the front electrode lying between at least the front glass substrate and the semiconductor film. The structure of the front electrode has an essentially transparent metal film and a high-work function buffer film. The high-work function buffer film has work function which is higher than that of the metal film, and the high-work function buffer film is placed between the metal film and the uppermost part of the semiconductor film. The high-work function buffer film has an oxygen-rich indium-tin oxide (ITO).
 Paste-like composition and solar cell / 2462788
Paste-like composition used to form an electrode (8) on the back surface of a p-type silicon semiconductor substrate (1), which is part of a crystalline silicon solar cell, according to the invention the paste-like composition contains aluminium powder as electroconductive powder, wherein said aluminium powder contains flake-like aluminium particles, wherein the average size ratio is greater than or equal to 30 and less than or equal to 600, wherein that size ratio is the ratio of the average size of the flake-like aluminium particles to the average thickness of the flake-like aluminium particles. A solar cell which is based on said paste-like composition is also disclosed.
 Semiconductor photodiode for infrared radiation / 2469438
Invention provides a high-efficiency semiconductor photodiode for detecting infrared radiation, which has two mesas formed on the substrate, the surface of one of which is a sensitive area and the other is a contact area, and back and front ohmic contacts. The back contact is solid and is deposited on the side of the substrate and the front contact is in form of a bridge, wherein the longitudinal axis of the bridge is directed at an angle of 40-50° to the crystal direction {110} of an A3B5 substrate. The bridge is electrically insulated from the mesa with the contact area by an anodic oxide and at least one dielectric layer deposited on it.
Conductive pastes / 2509789
Invention relates to conductive pastes for forming metal contacts on the surface of substrates for photovoltaic cells. The conductive paste is substantially free of frit glass. According to one version of the invention, the conductive paste contains organometallic components which form a solid metal oxide phase upon firing and conductive material. The organometallic components are selected from a group which includes metal carboxylates or metal alkoxides, where the metal is boron, aluminium, silicon, bismuth, zinc or vanadium. According to another version, the conductive paste includes multiple precursors which form conductive elements upon firing or heating. The paste is adapted for adhesion to the surface of a substrate and upon firing, forms a solid oxide phase while forming an electrical conductor from conductive materials on the substrate.
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FIELD: solar-to-electrical energy conversion; contacts for photoelectric semiconductor converters of various configurations. SUBSTANCE: proposed contact is built on thin silicon semiconductor wafer and has narrow current-carrying conductors in the form of current-collecting strips crossed at right angle by two wider current-carrying conductors in the form of current-collecting strips disposed symmetrically either side of longitudinal axis. Metal coat applied to 95-98% of surface area of narrow current-collecting strips can be disposed at distance of 0 - 3 mm from edges of wide current-collecting strips, that is, in immediate proximity of wide current-collecting strip edges. Invention specification also gives manufacturing process for this thick-film contact of silicon photoelectric converter. EFFECT: enhanced mechanical strength of joints and contact mechanical design, extended service life of converter and thick-film contact, reduced labor consumption for its manufacture, enhanced photoelectric converter efficiency. 14 cl, 3 dwg
The invention relates to the field of conversion of solar energy into electrical energy, in particular to the structures of contacts on semiconductor Converter of various configurations. Known thick-film contacts with low contact resistance to silicon photoelectric Converter (SC), consisting of a narrow Tocotronic conductive strips parallel to the transverse axis of the PVC on step away from each other, and the wider collector strips that run parallel to the longitudinal axis of the solar cells at the same distance on either side of it to attach a current deflecting conductors (metal Chinook), and having a metal coating of Nickel on the entire surface, reducing the contact resistance (see RF patent №2139600 to the invention, CL H01L 31/18, publ. 1999). The presence of a metallic coating on a wide collector zones and sites designed to attach metal tavern, reduces the strength of the contact (adhesion). Soldering and service conductor, coated metals, is bad. At the same time necessarily apply active fluxes, which deteriorates the adhesion of the conductor to the plate and require washing plates after soldering. Known thick-film contacts with low contact resistance to the silicon is the first photoelectric Converter (FEP), consisting of a narrow cokesbury (conductive) strips that run parallel to the transverse axis of the PVC on step away from each other, and the wider collector strips that run parallel to the axis of the PVC at the same distance on either side of it to attach a current deflecting conductors (metal Chinook), and having a metal coating on the entire surface of each narrow Thomasboro strip (smslisto of the Russian Federation No. 20195 for a utility model, CL H01L 31/18, publ. 2001 - prototype). A disadvantage of the known device lies in insufficient mechanical strength of the contacts due to the fact that when the metal coating is not excluded partial contact with a wide collector strip, which reduces the lifetime of photovoltaic cells. A known method of manufacturing thick-film contact with the low resistance silicon solar cells, including the formation of thick-film contact and settling on him electrolytic or chemical means metal layer such that the deposited film covering the contact reaches its periphery surface of the substrate, forming with it a reliable electrical connection, allowing for deposition of use metals, including Nickel, forming a chemical compound with the surface of the substrate during subsequent Ter is obrabotke (see RF patent №2139600 to the invention, CL H01L 31/18, publ. 1999 - prototype). Formed in the thick-film contact, reduction of contact resistance is due to the deposited film of Nickel. However, in the case of deposition of metal on a wide collector strips, intended for connection of conductors, the impact of solutions in the electrochemical or chemical coating decreases the strength of contact (adhesion thick film conductor to a silicon wafer). Also, when soldering and service thick-film contacts (conductors), coated metals, the use of active fluxes, which in turn impairs the adhesion to an even greater extent. The invention of the thick-film contact solves the problem of increasing the mechanical strength of the connections in the design of the contacts. The technical result is to increase the service life of PV inverter and build quality solar modules. This provides ease of manufacturing thick-film contact due to the optimum requirements for the dimensions of the metal coating, which reduces the cost of solar modules. The invention method solves the problem of increasing the durability of thick-film contact, reducing the complexity of its production, reduce material consumption (nickname is La) use non-corrosive materials available. The technical result is to increase the efficiency of photovoltaic cell by improving the conditions of power collection in connection with the guaranteed preventing material Nickel on a wide collector strip. Additionally solves the problem of improving the performance of manufacturing thick-film contact (due to the optimum requirements for metal coating) to reduce the cost of solar modules. This object is achieved in that in the thick-film contact silicon photovoltaic cell that includes a narrow conductive wires with a metallic coating, passing along a single axis PV inverter to step away from each other, and two wide conductive conductor running parallel to the other axis at the same distance on either side of it to attach a current deflecting conductors, metallic coating narrow conductive wires are made at a distance of not more than three millimeters from the edges of the wide conductive conductors and its total area is 95-98% of the total surface area of all the narrow conductive wires. Suitable metallic coating narrow conductive wire is Cove to perform with the same or different offset from the edges of the wide conductive wires on each narrow conductive Explorer. Preferably, the metallic coating narrow conductive conductors on at least one narrow conductive placed directly at the edge of the wide conductive Explorer. It is advisable narrow conductive wires run in cokesbury bands. It is advisable narrow conductive wires run in cokesbury bands with userfullname areas which are located at the intersection of wide and narrow conductive wires. Preferably, the metallic coating is made of Nickel. This object is achieved in that in a method of producing thick-film contact in silicon photoelectric Converter, comprising the manufacture of thick-film contact, having a narrow conductive wires passing on step away from each other along a single axis PV inverter, and two wider conductive conductor passing along the other axis at the same distance on either side of it to attach a current deflecting conductors and the metal coating on the narrow conductive traces, before applying the metal coating on the narrow conductive wires protect at least the entire surface of the wide conductive wires from the Mat is of real metal coating, applying remedies, applying a layer of metal coating is carried out at a distance not exceeding three millimeters from the edges of the wide conductive conductors, coated 95-98% of the total surface area of the narrow conductive conductors when applying metal protections are removed. It is advisable before applying the metallic coating on the narrow conductive conduits to protect the entire surface of the wide conductors and conductive parts of the surface of the narrow conductive wires. Preferably the protection of the entire surface of the wide conductors and part of the surface of the narrow conductive conductors to carry out the maintenance of these surfaces by the solder with the use of low fluxes. Appropriate protection of the entire surface of the wide conductors and conductive parts of the surface of the narrow conductive conductors to carry out the mask template. Appropriate protection of the entire surface of the wide conductors and conductive parts of the surface of the narrow conductive wires to make a film covering, including varnish, rosin flux, resin. Suitable metal coating is made of Nickel. It is advisable narrow conductive wires run in the form Tocotronic bands. Preferred is entrusted narrow conductive wires run in the form Tocotronic bands with userfullname sites, located at the intersection of wide and narrow conductive wires. The invention consists in that the metal coating is applied only on a narrow current band, and its area is 95-98% of the total surface area of all the narrow conductive wires. The analysis of the prior art and the identification of sources about the analogs of the invention allows to establish that the applicants technical solutions are not found, which is characterized by symptoms that are identical to all material of the claimed invention. The definition of the prototype allowed us to identify a set of essential (with respect to the apparent technical result) distinctive characteristics included in the invention. Therefore, the claimed invention meets the requirement of "novelty". Information about the popularity of the distinctive features in the complex of symptoms known technical solutions to achieve the same as the claimed device, the positive effect is not there. On this basis it is concluded that the proposed solution meets the criterion of "inventive step". 1 shows a silicon photoelectric transducer, the view from the front side; figure 2 - options for thick-film contacts (enlarged fragment of figure 1) with Uzkimyosanoat conductors in the form Tocotronic strips; figure 3 - options for thick-film contact with the narrow conductive conductors in the form of Tocotronic bands with userfullname platforms. Thick-film contact (figure 1) obtained in the photoelectric Converter on a thin semiconductor plate 1 is made of silicon, which from the front (illuminated) side at a depth of about one micron has a hole-e or p-n junction, the plane of which is parallel to the surface of said plate 1, and is designed as a thick-film contact grid comprising passing without break parallel transverse (horizontal) axis with a certain step (h) from each other narrow conductive wires, made in the form cokesbury (metallic) strips 2 (2), cross at an angle of 90° two wider current-carrying conductors in the form of a current collector (metal) bands 3, located symmetrically on either side of the longitudinal axis. Narrow tocombine strips 2 are provided with a metallic cover 4, for example, of Nickel. Narrow conductive wire may be made in the form of Tocotronic strips 2 userfullname sites 5 (3), arranged symmetrically relative to the longitudinal axis at the intersection of collector lanes 3 with a narrow tocombine strips 2, and having a size of from 0.5 to 0.9 millimeters square. Similar tol topanocky contact can be made on the back side of the semiconductor wafer 1, repeating in terms of the contact grid is identical to the face (Fig. not shown). A semiconductor wafer 1 may have a different configuration, including pseudocedrela, or hexagon, or circle, or ellipse. Photoelectric Converter operates in a known manner. The p-n junction is formed a potential barrier that separates the plate to the negative and positive areas. The photoelectric effect is that created by the light free charge carriers reduces the potential barrier at the p-n junction, causing between the front and back of an electric voltage is generated, and through reduced barrier free charge carriers are able to circulate in the external electrical circuit, doing useful work in the load. By coating the contact grid, thick-film contact metal decreases the internal series resistance of the photovoltaic Converter and, consequently, loss of energy, causing increases the efficiency of conversion of light energy into electrical energy. The voltage of the PV inverter is determined by the height of the potential barrier at the p-n junction, and the current - concentration generated charge carriers passing through the p-n junction. The current is proportional to the illuminated area of the p-n junction. Performing metal is anyone covering 4 not at all total area Tocotronic strips 2 allows you to save a guaranteed good quality contact wide collector lanes 3 to the semiconductor wafer 1 and provides the solder metal to them Chinook using fluxes at the service, not having increased activity. It defines a high strength contact (adhesion of the thick film conductor to the semiconductor plate 1) in the proposed FEP. According to the proposed method of manufacturing thick-film contact to increase the strength of the contacts before applying the metal coating 4 protects at least the entire surface of the wide collector lanes 3 PVC, designed to attach a current deflecting tires (conductors), and a small part of the narrow Tocotronic strips 2 so that free from deposition of the metal coating 4 remained zone 6 on some (Fig, figw, Figg, figb, figw, Figg) or all narrow Tocotronic bands 2 (figa, figa). Variants thick-film contact on figure 2, figure 3 differ in the number of these zones 6 (without Nickel) and distance (d) from a wide collector strips 3. It was established experimentally that the total area of the metal coating 4 in the range 95-98% of the total area of the narrow Tocotronic strips 2 does not deteriorate parameters of solar cells and are guaranteed excludes the ingress of metal material on a wide collector band 3 (if more space, you might hit the metal on the wide collector strip 3, with lesser decreases the mechanical strength of cholestoplex is on contact). When the metallic coating 4 on the narrow Tocotronic bands 2 thick-film contact may be located at a distance (d) 0-3 mm from the edges of the wide collector lanes 3, i.e. directly from the edges of the wide collector lanes 3 and/or at a distance (d) from 0.3 to 3 mm (not more than 3 mm) from them in various ways, as shown in figure 2, 3. Protection against ingress of metal on a wide collector strip can be accomplished by various means, for example: - service the entire surface of the wide conductors and conductive parts of the surface of the narrow conductive wires solder with the use of low fluxes (e.g., tin-lead solder POS 61 when using a light flux with supplements); the operation of applying metal special fixtures, including using the mask patterns that overlap when applying the metal edge of the wide collector strips not more than three millimeters to protect the surface of a wide collector conductors 3 and part of the surface (zone 6) narrow Tocotronic conductors 2 from falling solutions; - application for protection of a wide part of the collector lanes 3 and part of the surface of the narrow Tocotronic conductors protective films (rosin flux, lacquer masking coating). The remedy is removed after applying the IU is Alla. As a result of applying one of the above options protection in the process of electrolytic or chemical deposition of the metal solution has no effect on the thick-film conductors in places intended for the connection of the tire, with the result that their structure is not disturbed and, therefore, does not deteriorate the adhesion of the conductors to the silicon wafer and is achieved by reduction of contact resistance of the contact grid. The proposed method of manufacturing thick-film contact is the following. For example, specific performance of the thick-film contact was used wafers of monocrystalline silicon of p-type or n-type with orientation (100). After the diode structure in the semiconductor wafer 1 by any means at its both sides by screen printing of silver paste is applied to the contact grid, consisting of Tocotronic lanes 2 and wide collector lanes 3, intended for connection of current deflecting conductors (metal Chinook). Pasta wihout in a belt furnace at a maximum temperature of about 700-750°C. is then masking or maintenance solder POS 61 wide collector lanes 3 pin grid with capture small areas 6 narrow Tocotronic strips 2 at a distance of not more than three millimeters from the edges with a soldering iron and with the use of active flux. Then on unprotected areas narrow Tocotronic strips 2 by the method of electrolytic deposition solution containing, for example, NiS04220 g/l, Na2SO4- 200 g/l, N3BO55 g/l for 5-10 minutes a layer of Nickel, with a wide (tin) collector lanes 3 and part of the total surface of the narrow Tocotronic strips 2 are protected from the ingress of electrolyte special device in the form of the mask pattern, the dimensions of which exceed the dimensions of the wide collector lanes 3 not more than three millimeters, while Nickel is not deposited on the layer of solder. The resulting solar cells with high efficiency, the relative strength of their contacts is at least 50-100 g at an angle of separation 90° from tin pads copper bus bars with thickness of 0.1 mm and a width of 1.3 mm. 1. Thick-film contact silicon photovoltaic cell that includes a narrow conductive wires with a metallic coating, passing along a single axis PV inverter to step away from each other, and two wide conductive conductor running parallel to the other axis at the same distance on either side of it to attach a current deflecting conductors, characterized in that the metal coating narrow Ecopravo the yaschih conductors are made at a distance of not more than three millimeters from the edges of the wide conductive conductors and its total area is 95-98% of the total surface area of all the narrow conductive wires. 2. Thick-film contact according to claim 1, characterized in that the metal coating narrow conductive wires made of the same or different offset from the edges of the wide conductive wires on each narrow conductive Explorer. 3. Thick-film contact according to claim 1, characterized in that the metal coating narrow conductive conductors on at least one narrow conductive conductor is located directly at the edge of the wide conductive Explorer. 4. Thick-film contact according to claim 1, characterized in that narrow conductive wires are made in the form Tocotronic bands. 5. Thick-film contact according to claim 1, characterized in that narrow conductive wires are made in the form Tocotronic bands with userfullname areas which are located at the intersection of wide and narrow conductive wires. 6. Thick-film contact according to claim 1, characterized in that the metal coating is made of Nickel. 7. A method of obtaining a thick film contact to silicon photovoltaic converters, including the manufacture of thick-film contact, having a narrow conductive wires passing on step away from each other along a single axis PV inverter, and two wider conductive wire is the AC passing along the other axis at the same distance on either side of it to attach a current deflecting conductors and the metal coating on the narrow conductive conductors, characterized in that before applying the metallic coating on the narrow conductive wires protect at least the entire surface of the wide conductive conductors from contact with the material of the metallic coating, applying remedies, applying a layer of metal coating is carried out at a distance not exceeding three millimeters from the edges of the wide conductive conductors, coated 95-98% of the total surface area of the narrow conductive conductors, while after application of the metal coating protection removed. 8. The method according to claim 7, characterized in that before applying the metallic coating on the narrow conductive wires protect the entire surface of the wide conductors and conductive parts of the surface of the narrow conductive wires. 9. The method according to claim 8, characterized in that the protection of the entire surface of the wide conductors and conductive parts of the surface of the narrow conductive wires carry out the maintenance of the solder with the use of low fluxes. 10. The method according to claim 8, characterized in that the protection of the entire surface of the Shi is okeh conductive wires and a portion of the surface of the narrow conductive wires carry out the mask template. 11. The method according to claim 8, characterized in that the protection of the entire surface of the wide conductors and conductive parts of the surface of the narrow conductive wires carry a film covering, including varnish, rosin flux, resin. 12. The method according to claim 7, characterized in that the metal coating is made of Nickel. 13. The method according to claim 7, characterized in that the thin conductive wires made in the form of Tocotronic bands. 14. The method according to claim 7, characterized in that the thin conductive wires made in the form of Tocotronic bands with userfullname areas which are located at the intersection of wide and narrow conductive wires.
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