Matrix-addressed optoelectronic device and electrode grid for this device

FIELD: optoelectronics.

SUBSTANCE: proposed invention is concerned with devices and apparatuses incorporating functional components forming planar set wherein functional components are addressing through first electrode grid with flat strip electrodes contacting one end of functional components and through second electrode grid they are contacting similar electrodes positioned perpendicular to electrodes of first electrode grid and brought in contact with opposite end of functional component. In this way, so-called matrix-addressed device is formed. Proposed optoelectronic device has functional medium in the form of active material possessing optoelectronic properties and inserted in the form of solid layer between first and second electrode grids EG1 and EG2, each incorporating parallel strip electrodes 1 and 2. Electrodes 2 of second electrode grid EG2 are positioned at certain angle to electrodes 1 of first electrode grid EG1; functional components 5 are formed in three-dimensional areas of active material 3 corresponding to relative superposition of electrodes 1 of first electrode grid EG1 and electrodes 2 of second electrode grid EG2 contacting active material 3 to organize set of matrix-addressed functional components. These functional components correspond to optically active pixels 5 of display or pixels 5 of photodetector. Electrodes 1 and 2 are disposed in each of electrode grids EG1 and EG2 in the form of dense parallel configuration and are insulated from each other by means of thin film 6 whose thickness amounts only to a fraction of electrode width. As a result, either display characterized in high surface brightness and high resolving power or photodetector of high-sensitivity and high-resolving power can be produced.

EFFECT: enhanced volumetric efficiency of pixels in active material amounting to that close to unity and, hence, enhanced resolving power.

9 cl, 11 dwg

The technical field to which the invention relates.

The present invention relates to an optoelectronic device with a matrix addressing containing a functional environment in the form of active material having optoelectronic properties and are in the form of a solid layer between the first and second electrode arrays. Each of these electrode arrays are equipped with mutually parallel use strip electrodes, and the electrodes of the second electrode grating is oriented at an angle to the first electrodes of the electrode array. In a three-dimensional zones of active material corresponding to the mutual overlap of the electrodes of the first electrode grids and electrodes of the second electrode grid in contact with the active material, formed of functional elements.

In the established set of functional elements with matrix addressing. Each functional element in the active material can be activated by applying voltage to skew the electrodes that define this element obtaining emitting, absorbing, reflecting or polarizing pixel in the display device. Alternatively, the functional element can be excited of incident optical radiation receiving pixel of the photodetector, the output voltage or output current of which the village who shall serve on the electrodes, skew in the area of the pixel. In any of these options as the active material is selected inorganic or organic material that is capable of being activated by the application thereto of a voltage, emit, absorb, reflect, or to polarize the optical radiation in accordance with a given function or being excited of incident optical radiation, to generate a voltage or current. You can perform functional element functions both types. Addressing pixel in any of the options occurs according to the scheme matrix addressing, and electrodes, at least one electrode set is made of fully transparent or partially transparent (translucent) material.

The present invention relates to electrode arrays for use in an optoelectronic device with a matrix addressing containing thin-film electrode layer with electrodes in the form of parallel strip conductors. When this electrode layer is made on the insulating surface of the backplane.

The level of technology

The present invention primarily relates to devices and devices containing functional elements forming a planar set, in which the addressing of the functional elements through the first of electron the Yu grate with parallel use strip electrodes, in contact with one side of the functional elements, and through the second electrode grid with the same electrodes that are focused, however, perpendicular to the first electrodes of the electrode grid and in contact with the opposite side of the functional element. The result is a so-called device with a matrix addressing. Such devices with a matrix addressing may contain functional elements, for example, in the form of logic cells, memory cells, or, in the case of the present invention, the pixels of the display or of the photodetector. Functional elements may be composed of one or more active switching means. In this case, the device with a matrix addressing is referred to as a device with an active matrix addressing. Alternatively, the functional elements can contain only passive (resistive or capacitive) funds. In this case, the device with a matrix addressing is referred to as a device with passive matrix addressing.

The last of these devices is considered as the most effective in terms of addressing, in particular with respect to the storage devices, as for formation of the memory cell does not require any switching elements such as transistors. It is desirable to achieve the best POS of the Noi storage capacity. However, the known design principles, which define the lower limit of the size of the memory cell, and also restrict the fill factor, defined by the area of the active material in the device matrix addressing, which can actually be used to form the active elements.

Known optoelectronic device with passive matrix addressing is shown in figa, contains essentially planar solid layer of the active material 3 (that is, the active material having optoelectronic properties). This layer is located between the first electrode bars EM containing parallel strip electrodes 1 with a width of w, located at a distance d from each other, and a similar second electrode bars EM containing parallel strip electrodes 2 with the same width w. The data electrodes 2 are perpendicular to the electrodes 1 of the first electrode grid EM. The whole area of the layer of active material 3, the corresponding mutual overlap of the electrodes 1, 2 of the respective electrode arrays, sets in the active material 3 pixel 5. When voltage is applied to the electrodes 1, 2 are mutually superposed (skew) in this zone, the pixel 5 begins to emit optical radiation (if the device is configured as a display). If the device configurer the Vano as the photodetector, when applying to the pixel 5 of the optical radiation on the electrodes 1, 2 will receive the detected current.

On fig.1b known optoelectronic device according to Figo presented in the section plane x-X in order to illustrate the arrangement of the electrodes 1, 2 and between them the whole of the layer of active material 3, and 5 pixels. The properties of the active material 3 is usually such that the voltage applied to skew the electrodes 1, 2 will only affect the pixels 5 that are in the area of the crossing, but not on adjacent pixels or cells that are located in areas of crossing of the neighboring electrodes. This property can be implemented by giving the active material properties anisotropic conductivity to the electrical conductivity could take place only in the direction perpendicular to the surface of the active material, and only between mutually superposed electrodes, in the absence of current flowing through the solid layer to the other pixels.

The size and density of the pixels 5 will depend on the minimum achievable size of the item, which are limited to the characteristics of the technological process. For example, when the electrodes are formed by applying a layer of metal, which is then attached to the given pattern using photomicrograph the technological process with the use of photolithographic masks in combination, for example, by etching, the minimum achievable size of f is determined by the properties of the mask. In turn, the properties of masks will depend on the wavelength of the used radiation. In other words, at the present level of technology development the size specified f will be 0.15 to 0.2 μm. As a consequence, the width w of the electrodes 1, 2 and the distance between them will be of the same order.

In this connection it may be noted that the parameter 2f is usually called a step, and the maximum number of resolvable lines per unit length, achieved by the application of known technology, is given by 0.5f. Accordingly, the maximum number of elements per unit area is given by the coefficient 0,25f². Therefore, if we consider the section 4, shown in figa, pixel area 5, as is apparent from figs (on which section 4 shows in more detail)will be f². It is clear that for each pixel requires a space corresponding to the section 4, which covers an area of 4f²i.e. in 4 times the area of f²the surface of the pixel. From the analysis it is clear that the matrix presented in figure 1, has a fill factor equal to 0.25 (i.e. f²/4f²). Therefore, the degree of the surface formed by the layer of active material 3 is low. To generate is to achieve a higher fill factor or a higher density of pixels 5 in the layer 3, it may be desirable either to increase the fill factor, or to achieve a higher resolution in the manufacturing process of the matrix, i.e. go to sizes less than 0.1 μm. However, in the second case, although it will be possible to increase the total number of pixels on the same area, the possibility of increasing the fill factor is not guaranteed.

From U.S. patent No. 5017515 known process, providing sublithographic distances between elements of the integrated circuit. As shown in figure 1 of the document, the known process is applicable to the formation of densely spaced parallel strip electrodes 13, 19, isolated from each other by the insulating element 14. This item is free from any size limits imposed by the use of photomicrographic process. As a consequence, this element can be made very thin compared with the size of the conductors, i.e. the electrodes. In the mentioned patent document describes how the electrode grids, made the proposed method can be applied for forming the strip electrodes for cells with a floating gate in the integrated circuit. for example, in a semiconductor memory device, memory cells which contain switching and zapomina the total transistor structure. This data bus is formed by appropriate doping of the substrate, obviously, with application for doping the same photomasks, which is used when forming the electrode layer of high density.

Disclosure of inventions

Taking into account the above considerations, the main objective, which aims the present invention is to provide the possibility of increasing the fill factor in an optoelectronic device with a matrix addressing of the above type to values approaching 1, and thereby to achieve maximum use of space a solid layer of active material 3 in such devices. On this use shall not be affected by the restrictions associated with the real or practical value of the minimum achievable size of f, defined by technology. Indeed, the fill factor will not change with decreasing size of f, although this reduction, of course, will lead to a further increase in the number of pixels that can be formed into a solid layer of active material 3.

The solution of these problems, as well as the advantages and properties provided by the present invention, are achieved by an optoelectronic device with a matrix addressing, which is characterized by the fact that the electrodes of each electroneutrality performed in the corresponding electrode layer. All electrodes within an electrode grid are approximately the same width w, while the electrodes of each electrode grids are electrically isolated from each other by a thin insulating film of a thickness of δ. Value δ is the portion of the specified width w, and the minimum value for w is comparable with the minimum achievable size of f, defined process. Thus the fill factor applied to the pixels in the active material optoelectronic devices close to 1, and the number of pixels is close to the maximum value defined by the total area of the active material located between the electrode grids, and the specified minimum achievable size of f. In other words, the mentioned maximum value is set by the ratio A/f².

In accordance with a preferred variant of the device according to the invention the active material with optoelectronic properties, is an organic material with anisotropic conductivity. Diode domains of the material in contact with the electrodes included in the electrode grids, and organic conductive material may preferably be emitting or photovoltaic polymer with conjugated bonds. In this case, the optoelectronic is a device with a matrix addressing can function as a display or a sensor, or both the display and the photodetector.

In accordance with this preferred option device diode domains may have the ability to emit optical radiation being activated is applied thereto by the tension. In this case, the optoelectronic device with a matrix addressing can function as a display.

Alternatively, diode domains may have the ability to generate current or voltage being induced to it (i.e. initiated) incident optical radiation. In this case, the optoelectronic device with a matrix addressing can function as a photodetector.

The solution of these problems, as well as the advantages and properties provided by the present invention, are achieved at the expense of the electrode grids, which is characterized by the fact that thin-film electrode layer contains a first set of strip electrodes with a width of w_aand height (i.e. thickness) h_alocated on the surface of the backplane. While the electrodes of the first set are separated from each other by a distance d equal to or greater than w_a. Electrode grid also contains a second set of strip electrodes of width w_band height h_blocated in the spaces between the electrodes of the first set and electrically insulated from the said electrodes through the thin film of electrically insulating material of a thickness of δ . This thin film is at least along the side edges of the parallel electrodes and forms a parallel between the electrodes of the insulating wall thickness δ. The value of δ selected significantly less than any of the values w_aor w_band the distance d between the electrodes of the first set is w_b+2δ. Electrode layer with the sets of electrodes and thin film together form a one-piece planar layer comprising the electrode array located on a surface of the backplane.

In a preferred embodiment, the electrode grid in accordance with the invention, an insulating wall between the electrodes of the first set and the electrodes of the second set are formed by parts of a thin film of insulating material is applied in the form of a layer covering the side edges of the electrodes of the first set until their upper surfaces, as well as the backplane between the electrodes of the first set. While the electrodes of the second set are formed in the cavities between the walls and are located over the thin film covering the backplane. The upper surface of the electrodes of the second set are in the same plane with the upper edges of the insulating walls and upper surfaces of the electrodes of the first set. The height h_be is Strogov second set is h _b=h_a-δand an electrode layer containing the electrodes of the first and second sets, and a thin film form a one-piece planar layer with a height of h_ain the composition of the electrode grids, located on its backplane.

In at least one of the electrode arrays made according to the invention and used in the proposed device, the electrodes of the first and second sets and the backplane is made of fully or partially transparent material.

Brief description of drawings

Hereinafter the invention will be described in detail with reference to the accompanying drawings.

On figa-1C shows a known optoelectronic device with a matrix addressing, corresponding to the typical value of the fill factor, provided such devices.

On figa presents, top view of an optoelectronic device with a matrix addressing according to the invention.

On fig.2b this device is presented in the section plane x-X shown in figa.

On figs shows a detail of the device according figa explaining the high fill factor.

Figure 3, in section, showing a first variant of the electrode grid according to the invention.

In figure 4, in section, showing a second variant of the electrode grid according to the invention.

Figure 5, in cross section, shematichnosti emitting pixel, used in the device according to the invention.

Figure 6, in cross section, schematically shown receiving the pixel used in the device according to the invention.

7 schematically shows the preferred structure of the active material used in the pixel 5 or 6.

The implementation of the invention

Next, with reference to figa, 2b and 2C will be described device of the present invention and an electrode grid, which is part of this device. From this description, it should become clear how the proposed electrode grid allows to reach in the device according to the invention, a fill factor close to 1. Structurally similar device, but is configured as a ferroelectric memory device with a matrix addressing is the subject of a parallel international application WO 03/041084 belonging to the applicant of the present invention.

The device according to the invention, represented in the top view, on figa, corresponds to a version that implements the configuration with passive matrix addressing. In this embodiment, the active material 3 (i.e. the active material having optoelectronic properties) is a one-piece (single) layer, located between the two electrode arrays EM, EM made according to the invention. The first electrode grid is M1, which can be made in accordance with any of the options presented in figure 3 and 4, is identical to the second electrode lattice EM. However, this second electrode grid contains parallel strip electrodes 2, oriented at an angle (preferably direct) relative to the corresponding electrodes 1, the first electrode grid EM, as shown in the drawing. Where is the overlap of the electrodes 1, 2 in the active material 3, located between the electrodes, sets the pixel 5.

Pixel 5 can be a semiconductor organic or inorganic material capable, under the action of an appropriate stimulus (i.e. the applied voltage in the first case and the incident optical radiation in the second case), emitting optical radiation or to generate a photocurrent. In the most preferred embodiment, the active material is a polymer with conjugated bonds with anisotropic electrical conductivity, i.e. such polymer, in which the electrical conductivity will only take place between crossing electrodes 1, 2, and only in the direction perpendicular to the planar surface of the layer of active material.

For greater clarity, the driver circuit and the read circuit and control figa not shown. However, real options implementation they can be realized using CMOS technology on silicon basis. However, they can be performed on the backplane 7, if it is made of the same material. In this case, the routing and connection of the electrodes 1, 2 to the above-mentioned circuits are implemented well known to specialists methods.

As already mentioned, the active material 3 is located between the electrode arrays EM, EM, as is most clearly shown in fig.2b corresponding to the cross section of the device for figa plane X-X. In the zone of overlap (crossing) of the electrodes 1, 2 in the active material 3 (which is emitting or vodoprovodny) sets the pixel 5. The electrodes 1, 2 of the electrode grids EM, EM in any case, separated only by a very thin film 6 of insulating material. Thickness δ this film is only a small part of the width w of the electrodes 1, 2, which in the most preferred case corresponds to the minimum achievable size of the f element, achieved in the manufacturing process. In this regard, it should be clear that the use of electrode arrays EAT according to the invention allows to significantly improve the fill factor, bringing its value to 1. In this regard, it should be noted that in the General case of alternating electrodes ε_athat ε_bmay have different widths w_a, w_b. However, since ww_bin real situations, we can assume that they have the same width w.

The advantage of using the above relations can be seen when considering planar section 4, containing, as it is shown in figs, four pixel 5₁-5₄. The total area occupied by the insulating walls 6A located between the electrodes and determining the pixel size by the electrodes included in the electrode arrays EM, EM, is described by the expression 4f²+8fδ+4δ². It follows that since δ the device according to the invention is only a small part of the value of f size or width w of the electrodes 1, 2, a fill factor of the device according to the invention is close to 100%. In other words, almost the entire area of the active material 3, entered into between electrode arrays EM, AM, will be occupied by 5 pixels, i.e. the mean value of the surface area of the pixel will be f². For example, if we take the value of f≅w 1, a δ=0,01f, the total area of the site under consideration will be 4+8·0,01+0,0004≅4,08. The fill factor will be respectively equal to 4/4,08=0,98, i.e. 98%.

If the area accessible surface of active material 3 is equal to a, then the maximum number of pixels 5 in the matrix device according to the invention will be in accordance is with the invention of A/f ². For example, if design considerations the value of f is chosen equal to 0.2 μm, and the size And area of the active material 3, on which you can put 5 pixels, is equal to 10⁶μm²the total number of these pixels will be 0,98·10⁶/0,22=24.5cm·10⁶. Accordingly, the density of the pixels will be about 25·10⁶mm². In known devices in which the electrodes are separated from each other by a distance d, defined by the minimum achievable size f, the same plot 4, as shown in figs, will contain only one pixel is 5, i.e., the fill factor is equal to 0.25 (i.e. 25%). Naturally, the maximum achievable number of pixels will be only the fourth part of the quantity that can be achieved in the device according to the present invention.

In the case where the device according to the invention is presented on figa-2C, configured as a display device, the active material 3 must have the ability to emit optical radiation when it is activated by a voltage applied to the corresponding skew the electrodes 1, 2, forming part of the electrode grids EM, EM. Accordingly, the pixel 5, defined by the mutual overlap of the respective electrodes 1, 2, represent the pixel part of the display. On the Kolka fill factor in any case be close to unity, it is possible to obtain high-resolution display, in which almost the entire surface And is occupied by the pixels. Moreover, increasing the fill factor, for example, from 0.25 to values close to 1 will allow you to create a display with correspondingly high surface brightness. Because the pixels, at least one side of the display must be converted to the environment, electrodes, at least one of the electrode arrays EM, EM should be fully or partially transparent. This requirement must also be satisfied the material of one of the backplane circuit Board 7. In the embodiment of fig.2b motherboard 7 may be provided above the driver circuits and the circuits of the readout and control. When this opposite motherboard 7', shown by the dashed line, and the electrodes 2, should be fully or partially transparent to optical radiation. In addition, the insulating material used to produce thin insulating film 6 may in this case be completely or partially transparent. The electrodes 2 in this case can be made, as is well known to experts in the field of indium oxide and tin, which is widely used in LEDs.

Figure 3 shows the first preferred embodiment of electr the ne lattice EAT. In this embodiment, the electrode grid EAT contains a lot of strip electrodes ε_athat ε_bprinted on the backplane 7. Electrodes ε_acan be considered as belonging to the first electrode set and formed from the first solid layer of electrode material. A given configuration of electrodes is then processed by photolithographic operations using the appropriate mask. Accordingly, electrodes ε_blocated between the electrodes of the first set may be considered as belonging to the second electrode set, which is formed after the creation of the insulating wall 6A in the recesses formed between the electrodes ε_aduring the execution of the said lithographic operations. The distance between two adjacent electrodes ε_aand the width of these electrodes are respectively d and w_awhereas the width of the electrodes ε_bis w_b. Thus w_a, w_band d have similar values, and the smallest of these values is set to the minimum achievable size of f, defined process is used for forming electrodes ε_a. At the same time, the thickness of δ insulating walls 6A is not associated with the f value and may even correspond to the range of nanometers. The unity of the TES limitation when choosing the thickness of the thin insulating film is it should prevent electrical faults and breakdowns between electrodes ε_athat ε_b. In other words, provided that the surface of the backplane 7, provide the necessary fixation of the relative position of the electrodes is electrically insulating, all parallel strip electrodes ε_athat ε_bwill be electrically isolated from each other. It should be noted that the height as electrodes ε_athat ε_band insulating walls 6A is equal to h, and is the ratio d=w_b+2δ. Provided that the distance d between the electrodes is defined as d=w_b+2δ, w_a, w_bfor electrodes ε_athat ε_bwill be the same, i.e. they can be denoted as w. In this case, all electrodes ε_athat ε_bwill have the same cross-section. If they are made of the same electrically conductive material, then they will all have the same properties in terms of conductivity.

In the embodiment, the electrode grid EAT, are presented in figure 4, the specified configuration of electrode ε_andas in the previous embodiment, is formed from a single layer of electrode material, and then apply a solid thin layer insulating film 6 that covers fully ka the substrate (i.e. the backplane) 7, and electrodes ε_a. Then apply the conductive material covering the insulating layer 6b and filling the hollows between electrodes ε_a. Then the following transactions (planarization) is produced by removing part of the insulating film 6 covering the electrodes ε_atogether with the excess material formed during the application of electrodes ε_b. In the upper surface electrodes ε_athat ε_bforming a surface electrode layer are exposed and lying flush with the top wall 6A. Thus, all electrodes ε_athat ε_bhaving an exposed surface that can form ohmic contact with any active material 3, with optoelectronic properties, which is applied on top of them. However, in the present example, when the active material is an insulator, such as liquid crystal material, may be provided with capacitive touch, and in this case, the upper surface electrodes can be applied a thin insulating film 6. It is written entirely refers to the variant of the invention, presented in figure 4. The information above regarding the minimum width w_a, w_belectrode ε_athat ε_bfully riminima to this option.

You can see that the height h_aelectrode ε_adifferent from a height of h_bthe value of δcorresponding to the thickness of the part 6b of the thin insulating film 6 covering the substrate 7. In this case, means that the distance d between electrodes ε_ain the process of forming the electrodes must be increased in such a way as to ensure (if this is desirable) receiving electrodes ε_athat ε_bwith the same cross-sectional area, i.e. with the same conductive properties (in the case when electrodes ε_athat ε_bmade of the same material or of materials with the same thermal conductivity).

For the implementation of the planarization electrode layer of the electrode grids EAT according to variants of the invention according to Fig 3, 4 can be any suitable means for this, for example, chemical-mechanical polishing, controlled etching or managed microabrasives process. More detailed information regarding the receiving electrode arrays according to the invention of the type presented in figure 3, 4, including how it is manufactured, can be found in international application WO 03/041084.

As for the materials for the electrode lattice EAT, used in the device according to the present invention, as already mentioned you can use any suitable electrically conductive material, in particular, metals such as titanium or aluminum, which are widely used in electronic devices.

The material for the electrodes may serve as well as organic materials such as conductive polymers. In any case, these materials must be compatible with the process of forming the insulating thin-film layer, or any other process used for partial removal of this layer. It is also obvious that the electrodes, at least one of the electrode arrays EAT must be entirely or partially transparent to optical radiation, because it is a condition for the functioning of the device as a display or a sensor.

It should be clear that the width w of the electrodes included in the electrode grid EAT according to the invention, should be kept to a minimum and to determine the minimum achievable size of f. Note, however, that in the first of these examples, this restriction applies only to the width of the electrodes ε_aforming a first set of electrodes, which form a lithographic method, and the distances between these electrodes. Electrodes ε_bcan be applied using methods that do not have specified limitations of lithographic or similar methods of forming electrodes. This applies, of course, and to make the structure of a thin insulating film, which can be carried out, for example, by oxidation, vapor deposition or sputtering of the liquid or solid phase to obtain a size corresponding to almost monatomic layers. The only requirement to be met for this film, is the creation of the necessary electrical insulation between adjacent electrodes ε_aand ε_bincluded in the respective sets of electrodes in the electrode arrays EAT. In conventional photolithographic technology, the f-value usually lies at 0.2 μm or has a somewhat lower value, and is currently in the exploration or development of other technologies relevant to the range of nanometers. These technologies, in particular, aims to obtain electrodes with width of the order of several tens of nanometers, as well as on the implementation of the necessary planarization, which will provide a high degree of flatness of the upper surface of the electrode grids EAT despite the fact that all of the components, i.e. electrodes ε_aand ε_band a thin insulating film 6 will be at the same level corresponding to the upper surface of the electrode grids EAT.

So, in General, the use of electrode arrays EAT in the device of the present invention, in which the active medium is located between the two electrode arrays n is the basis of parallel strip electrodes, situated at an angle to each other (preferably mutually perpendicular) with the formation of the display or of the photodetector matrix addressing, allows to obtain a fill factor close to 1, and the maximum number of specified pixels. The number of pixels is limited only by the design constraints imposed by the process of forming the predetermined pattern of the electrodes.

Figure 5 schematically shows the structure of a single pixel in the embodiment, according to which the device according to the invention is a display. Between the electrode 1 of the first electrode grid EM and the electrode 2 of the second electrode grid EM is active material 3, with optoelectronic properties, i.e. containing the domains 10, emitting optical radiation, and preferably represents a polymer light-emitting diodes. Working voltage V_Eserved on polymer LEDs 10 with electrodes 1, 2 which are connected to the power source 8. It should be clear that figure 5 shows only part of the strip electrodes 1, 2 forming part of the electrode grids EM, EM, and the electrode 2 is preferably oriented perpendicular to the electrode 1. The LEDs 10 can be tunable in wavelength. In this case, the active material 3 will include the substance of the LEDs, the wavelength of emission of which is adjusted by varying the voltage, as described, for example, in international application WO 95/031515.

It should be noted that the device according to the invention can be a non-emitting display, i.e. a display whose pixels, in response to the applied voltage, can reflect, absorb, or polarized optical radiation. Such displays are appropriate to use as the active material liquid crystal material, of course, well known in the art. If the electrode arrays provided by the present invention, these displays have the same advantages that the options screens, the pixels which are emitting. Since the liquid crystal material is dielectric, the upper contact surface of the electrodes included in the electrode grids, can be, as mentioned, is covered with a thin insulating film 6. In this regard, you can refer to the above-mentioned international application WO 03/041084, which describes relevant alternative embodiment of the electrode arrays.

Figure 6 schematically shows a pixel 5 in the version in which the device according to the present invention is a photodetector. The active material 3, obladaushi the optoelectronic properties similar to the radiating material used in the embodiment of figure 5. The active material 3 is located between the electrodes 1, 2 and focused on them in the same way. When the active material 3 under the influence of the exciting incident optical radiation generates a current or voltage, the electrodes 1, 2 pass voltage V_Dsignal on the readout amplifier 9.

Of course, it should be clear that at least one of the electrodes 1, 2, 5 or 6 should be transparent. This requirement applies to neizabranog backplane 7, which is formed above the electrodes. As already mentioned, the active material 3 can correspond to either the LEDs or photodiodes. In a particularly preferred case, the diodes are organic diodes based polymer with conjugated bonds, which have already been mentioned above and which is described in document WO 95/031515. It should in this connection be noted that such emitting polymer diodes to tune the wavelength and emit light at multiple wavelengths by varying the operating voltage applied to the diode. In the case when such diodes also have photovoltaic properties and, therefore, suitable for use as a pixel of the photodetector (see Fig.6), note that the wavelength ratio is estoya maximum sensitivity, will be different from the wavelength corresponding to the peak emission, and offset this wavelength to shorter wavelengths. This phenomenon, called Stokes shift (or offset), well known to experts in this field. The diodes on the basis of active material with optoelectronic properties, can be manufactured in the form of a thin polymer film with domains in the form of polymers with conjugated bonds and with thickness of the order of several tens of nanometers or even less. The amounts of the individual diodes should not significantly exceed this value.

The pixel may contain a number of physically separated by emitting or absorbing radiation of the domains 10, 10', as shown in Fig.7. This figure is a schematic representation in cross section of one pixel of the members of the device according to the invention. Of course, the layer of active material 3 is a solid layer on the device, the domains 10, 10' which apply only to one specific type of radiating or absorbing polymer, which have different intervals of wavelengths of emission or absorption. When this thin film containing a polymer with conjugated bonds, may have anisotropic conductivity. In this case, the current applied to the layer of active material, nah is masegosa between the electrodes 1, 2, will take place only between the electrodes that define each pixel 5, but not in the transverse direction. In order to fully realize the effect of emission of optical radiation and the photoelectric effect, all domains 10, 10', both emitting and absorbing radiation, must be in contact with the electrodes 1, 2. Thus it should be clear that the device according to the invention, using an electrode grid EAT when you fill factor close to 1, this condition is met. As a result, the device according to the invention, depending on its purpose, provides for the creation or display with a maximum surface brightness, or of a sensor with the highest sensitivity.

In addition, it should be clear that achieving high fill factor due to the application of insulating material, which has a small thickness δconstituting a small fraction of the width of the electrode to provide a high density of pixels in the approximation of the surface area occupied by the pixels to the total area And the surface of the solid layer of active material 3. In addition, the resolution corresponding to the total number of pixels that can be implemented in the device, will be the maximum value detected by the minimum achievable size of the f characteristic of the technology used. All these considerations confirm the abrupt increase of performance be achieved in the device according to the present invention regardless, configured it as a display or a sensor.

Being configured as a display device capable of functioning as both monochrome and colour display. In the latter case, the active material may contain a diode domains 10, 10', emitting radiation at different wavelengths depending on the applied voltage V_E. For example, the increase in V_Ewill lead to a shift of the peak emission toward shorter wavelengths, provided that the wavelengths corresponding to the peak emission diode domains 10, 10', are respectively, for example, in the red and blue regions of the optical spectrum. In other words, the configuration of the wavelength of a single pixel in this case, by changing the voltage V_Eapplied to these domains through the electrodes 1, 2 which is in contact with the pixel.

As already mentioned, the active material may be a liquid crystal material. In this case, the pixels under the action of the excitation may be reflecting, absorbing or polarizing optical radiation, as is well known to experts.

B is duci configured as a photodetector, the device can be effectively used as a detector in black and white optoelectronic camera or, with appropriate modifications, in a color camera. In the latter case, the diode domains 10, 10' must have a different spectral sensitivity and to generate a response in the form of current or voltage V_Dwith the components of the response that depends on the wavelength of the incident optical radiation. The higher resolution provided by the device according to the invention can be compared with the resolution of traditional film format 24×36 mm depending on the region the number of pixels on the film may exceed 3·10⁷that corresponds to a linear resolution of about 5 microns. The photodetector in accordance with the invention, containing the receiving chip 1,2×1.2 mm, manufactured at f=0,20 μm, will provide the same performance as the film format 24×36 mm However, in the case of using the device according to the invention as a sensor in the electronic camera, you must consider that the effective pixel size must be compatible with long λ wavelength of incident radiation, comprising, for example, 0.5λ. Therefore, in order to cover the spectral range from near UV to near IR region, the pixel size should be from 0.1 to 1 μm. This, of course, means that it is about, in order to obtain comparable resolution available emulsions, it is necessary to find the effective area of the active material and the size of the photodetector.

1. Optoelectronic device with a matrix addressing containing a functional environment in the form of active material (3)having optoelectronic properties and are in the form of a solid layer between the first and second electrode arrays (EM, EM), each of which contains a parallel strip electrodes (1, 2)and the electrodes (2) the second electrode grid (EM) is oriented at an angle to the electrodes (1) the first electrode grid (EM), and volumetric zones of active material (3), corresponding to the mutual overlap of the electrodes (1) the first electrode grid (EM) and electrodes (2) the second electrode grid (EM)in contact with the active material (3), formed of functional elements (5) with the formation of a set of functional elements with matrix addressing, each functional element (5) in the active material can either be activated by the application of voltage to skew the electrodes (1, 2)in contact with the active material, with the formation of the element constituting the emitting, absorbing, reflecting or polarizing pixel display device, or excited ondastan optical radiation with the formation of the pixel in the photodetector, the output voltage or output current which is supplied to the electrodes (1, 2), skew in the area of a given pixel, and an active material (3) is inorganic or organic, and has the ability, depending on the specified function being activated by the application thereto of a voltage, emit, absorb, reflect, or to polarize the optical radiation and/or being excited of incident optical radiation, to generate a voltage or current, while addressing pixel (5) is realized by a matrix addressing, and the electrodes (1, 2), at least one of electrode arrays (EM, EM) is entirely or partially transparent material, characterized in that the electrodes (1, 2) of each of the electrode grid (EM, EM) performed in the respective electrode layer, all of the electrodes (1, 2) electrode arrays (EM, EM) have approximately the same width w, the minimum value of which is comparable with the minimum achievable size of f, defined by the technology, while the electrodes (1, 2) of each of the electrode grid (EM, EM) are isolated from each other by a thin insulating film (6) with a thickness of δconstituting a fraction of the width w of the electrodes, and the fill factor of the active material (3) pixels (5) is close to 1, and the number of pixels (5) approaches Maxim is linoma number, defined by the ratio A/f²i.e. the total area And the surface of the active material (3)between electrode arrays (EM, EM), and the specified minimum achievable size f.

2. Optoelectronic device according to claim 1, characterized in that the active material (3) with optoelectronic properties is an anisotropic conductive organic material with diode domains (10, 10')which is in contact with the electrodes (1, 2) electrode arrays (EM, EM).

3. Optoelectronic device according to claim 2, wherein the conductive organic material is a polymer with conjugated bonds with radiating and/or photovoltaic properties, and optoelectronic device capable of functioning as a display, a sensor, or as a display, and the photodetector.

4. Optoelectronic device according to claim 2, characterized in that, being activated by the applied voltage, the diode domains capable of emitting optical radiation from the operation of the optoelectronic device as a display.

5. Optoelectronic device according to claim 2, characterized in that upon excitation by incident optical radiation diode domains capable of generating a current or voltage with the operation of optoelectronic devices in ka is estwe of the photodetector.

6. Optoelectronic device according to claim 1, characterized in that the active material (3) with optoelectronic properties is a liquid crystal material, and an optoelectronic device capable of functioning as a display reflecting, absorbing or polarizing pixels (5).

7. Electrode grid (EM) for use in an optoelectronic device with a matrix addressing in accordance with claim 1, containing thin-film electrode layer with electrodes in the form of parallel strip conductors formed on the insulating surface of the backplane, characterized in that the possibility of use in an optoelectronic device with a matrix addressing in accordance with claim 1, in this thin-film electrode layer contains a first set of electrodes (ε_andwith a width of w_aand height h_alocated on the backplane (7) and spaced from each other a distance d, equal to their width w_ato or greater than its second set of strip electrodes (ε_bwith a width of w_band height h_blocated between the electrodes (ε_and) the first set and electrically isolated from them by a thin film (6) of electrically insulating material of a thickness of δlocated at least along side the paradises of parallel electrodes (ε _andthat ε_bthe first and second sets forming between these electrodes, an insulating wall (6A) of a thickness of δconsiderably smaller than the width w_aor width w_bmoreover , the distance d between the electrodes (ε_andthe first set is w_b+2δ, a of the electrode layer with the sets of electrodes (ε_andthat ε_b) and thin film (6) together form a one-piece planar layer part of the electrode grids (EM), located on the surface of the backplane (7).

8. Electrode grid (EM) according to claim 7, characterized in that the insulating wall (6A) between the electrodes (ε_a) the first set and the electrodes (ε_bthe second set is formed by parts of a thin film (6) of insulating material is applied in the form of a layer covering the side edges of the electrodes (ε_andthe first set until their upper surfaces, as well as the backplane (7) between the electrodes of the first set and the electrodes (ε_bthe second set is formed in the cavities between the walls (6A) and are located above parts (6b) thin film (6), covering the backplane (7), while the upper surface electrodes (ε_bthe second set are in the same plane with the upper edges of the insulating walls (6A) and with the upper surfaces ele is trudov (ε _andthe first set, and the height of the electrodes (ε_bthe second set is h_b=h_a-δwhile the electrode layer containing electrodes (ε_andthat ε_bthe first and second sets, and a thin film (6) form a one-piece planar layer with a height of h_ain the composition of the electrode grids (EM), located on the backplane electrode grid (EM).

9. Electrode grid (EM) according to claim 7, characterized in that the electrodes (ε_andthat ε_bthe first and second sets and the backplane (7) is entirely or partially transparent material.